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2023 China Semiconductor Technology International Conference, CSTIC 2023

作者： Zhong, Kun Yin, Huaxiang Zhang, Zhaohao Zhang, Fan Key Laboratory of Microelectronics Devices and Integrated Technology China Institute of Microelectronics of Chinese Academy of Sciences Beijing100029 China Xidian University Key Laboratory of Wide Bandgap Semiconductor Materials China School of Integrated Circuits University of Chinese Academy of Sciences Beijing100029 China

ISBN: (纸本)9798350311006

This paper investigates the properties of different Zr compositions in Hf1-xZrxO2 films. Due to the morphotropic phase boundary (MPB) between the orthorhombic ferroelectric phase and the tetragonal anti-ferroelectric phase, a maximum κ value of 55 was obtained for 9 nm Hf0.4Zr0.6O2 films. Furthermore, the sufficiently low leakage current of the capacitors was confirmed. Finally, a promising switching endurance of up to 5× 109 cycles was also performed, which becomes one of the driving forces for next-generation dynamic random access memories (DRAM) cell capacitor dielectric materials. © 2023 IEEE.

关键词： Ferroelectricity

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Assessing high-energy x-ray and proton irradiation effects on electrical properties of P-GaN and N-GaN thin films

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Chinese Physics B 2023年第7期32卷 443-447页

作者：钟傲雪王磊唐蕴杨永涛王进进朱慧平吴真平唐为华李博 State Key Laboratory of Information Photonics and Optical Communications&School of Science Beijing University of Posts and TelecommunicationsBeijing 100876China Institute of Microelectronics and Key Laboratory of Science and Technology on Silicon Devices Chinese Academy of SciencesUniversity of Chinese Academy of SciencesBeijing 100029China School of Integrated Circuits&State Key Laboratory of Information Photonics and Optical Communications Beijing University of Posts and TelecommunicationsBeijing 100876China

The effects of ionizing and displacement irradiation of high-energy x-ray and 2-MeV proton on GaN thin films were investigated and compared in this *** electrical properties of both P-GaN and N-GaN,separated from power devices,were gauged for fundamental *** was found that the electrical properties of P-GaN were improved as a consequence of the disruption of the Mg-H bond induced by high-dose x-ray irradiation,as indicated by the Hall and circular transmission line ***,under a 100-Mrad(Si)x-ray dose,the specific contact resistance pc of P-GaN decreased by 30%,and the hole carrier concentration increased ***,the atom displacement damage effect of a 2-MeV proton of 1×10^(13)p/cm^(2)led to a significant degradation of the electrical properties of P-GaN,while those of N-GaN remained unchanged.P-GaN was found to be more sensitive to irradiation than N-GaN thin *** effectiveness of x-ray irradiation in enhancing the electrical properties of P-GaN thin films was demonstrated in this study.

关键词： x-ray radiation proton radiation GaN circular transmission line model(CTLM)

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Experimental Demonstration of A CT-FeFET Array with Intrinsic Long-Short-Term Plasticity for Low-Cost Trajectory Prediction

Experimental Demonstration of A CT-FeFET Array with Intrinsi...

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2024 IEEE International Electron devices Meeting, IEDM 2024

作者： Li, Chao Yu, Jie Zhang, Xumeng Zhang, Zhaohao Zhu, Fangduo Ouyang, Siyuan Chen, Pei Cheng, Lingli Xu, Gaobo Zhang, Qingzhu Yin, Huaxiang Liu, Qi Liu, Ming State Key Laboratory of Integrated Chips and Systems Frontier Institute of Chip and System Fudan University Shanghai200438 China Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China Key Laboratory of Fabrication Technologies for Integrated Circuits Chinese Academy of Sciences Beijing100029 China

ISBN: (纸本)9798350365429

Trajectory prediction is a vital function in the auto-driving field, typically achieved with a long short-term memory network. Static IMC technology accelerates the computing of long-term parameters, while the execution of short-term parameters faces great buffer overhead. Inspired by the fused long-short-term synaptic plasticity in biology, here, we proposed a dynamic IMC strategy based on a charge-trapping FeFET array with intrinsic long-short-term plasticity. The long-term weights are stored in the ferroelectric domain, while the short-term weights are in-situ dynamically operated in a charge-trapping domain, eliminating the external caching process. We further demonstrated a dynamic IMC neuromorphic system built on this array for performing trajectory prediction of moving vehicles, achieving more than 1000× and 4× improvements than GPU in power consumption and memory overhead. © 2024 IEEE.

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Fatigue of ferroelectric field effect transistor: mechanisms and optimization strategies

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Journal of Semiconductors 2025年第6期46卷 66-78页

作者： Yu Song Pengfei Jiang Pan Xu Xueyang Peng Qianqian Wei Qingyi Yan Wei Wei Yuan Wang Xiao Long Tiancheng Gong Yang Yang Eskilla Venkata Ramana Qing Luo Key Laboratory of Fabrication Technologies for Integrated Circuits Chinese Academy of SciencesBeijing 100029China Laboratory of Microelectronics Devices and Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China University of Chinese Academy of Sciences Beijing 101408China I3N-Aveiro Department of PhysicsUniversity of AveiroAveiro3810193Portugal

The novel HfO2-based ferroelectric field effect transistor(FeFET)is considered a promising candidate for next-genera-tion nonvolatile memory(NVM).However,a series of reliability issues caused by the fatigue effect hinder its further ***,a comprehensive understanding of the fatigue mechanisms of the device and optimization strategies is essen-tial for its *** fundamental mechanism of the fatigue effect is attributed to charge trapping and trap generation based on the current studies,and the underlying causes,occurrence locations and specific impacts are analyzed in this *** particular,the asymmetric trapping/detrapping of electrons and holes,as well as the relationship between the ferroelectric(FE)polarization and charge trapping,are given particular *** categorizing and summarizing the current progress,we propose a series of optimization strategies derived based on the fatigue mechanisms.

关键词： FeFET fatigue charge trapping trap generation

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Vertical SnS2/Si heterostructure for tunnel diodes

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Science China(Information Sciences) 2020年第2期63卷 189-195页

作者： Rundong JIA Qianqian HUANG Ru HUANG Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of Microelectronics Peking University

Tunneling FET（TFET） is considered as one of the most promising low-power electronic devices,however, suffers from the low drive current. Heterostructure TFET with low effective tunnel barrier height based on traditional 3D materials can obtain large tunnel current but deteriorated off-state current induced by the lattice mismatch. van der Waals heterostructure TFET based on 2D materials can obtain danglingbond-free interface for suppressed off-state current but face the challenge of controllable and stable doping technology. As the critical building block of the TFET, tunnel diode based on the 2D/3D heterostructure is proposed in this study and experimentally demonstrated. Combination of the pristine interface of 2D materials and matured doping technology in the traditional 3D bulk materials, tunnel diodes based on the 2D/3D heterostructures are expected to realize low leakage current and high on current simultaneously,showing great potential in low-power electronics. The N+SnS2/P+Si heterostructure with effective tunnel barrier of 0.17 eV theoretically is considered for the first time and selected as the optimal material platform for tunnel diodes. The N+SnS2/P+Si tunnel diode demonstrated experimentally shows the high current density of 1 μA/μm2, which is the highest one among the reported tunnel diodes based on the 2D/group IV materials. The tunneling current is also confirmed by low-temperature measurements. This study shows the great potential of the 2D/3D heterostructure for low-power tunneling devices.

关键词： 2D/3D heterostructure SnS2/Si tunnel barrier tunnel diode energy-efficient

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Ferroelectric-controlled graphene plasmonic surfaces for all-optical neuromorphic vision

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Science China(Technological Sciences) 2024年第3期67卷 765-773页

作者： CHEN JianBo LIU Yu LI ShangDong LIN Lin LI YaDong HUANG Wen GUO JunXiong School of Electronic Information and Electrical Engineering Institute for Advanced StudyChengdu UniversityChengdu 610106China School of Integrated Circuits Tsinghua UniversityBeijing 100084China School of Integrated Circuits(National Exemplary Schoolof Microelectronics) Universityof Electronic Science and Technologyof China Chengdu 610054China Jincheng Research Institute of Opto-mechatronics Industry Jincheng 048000China Shanxi Key Laboratory of Advanced Semiconductor Optoelectronic Devices and Integrated Systems Jincheng 048000China Engineering Research Center of Digital Imaging and Display Ministry of EducationSoochow UniversitySuzhou 215006China

Artificial visual systems can recognize desired objects and information from complex environments, and are therefore highly desired for pattern recognition, object detection, and imaging applications. However, state-of-the-art artificial visual systems with high recognition performances that typically consist of electronic devices face the challenges of requiring huge storage space and high power consumption owing to redundant data. Here, we report a terahertz(THz) frequency-selective surface using a graphene split-ring resonator driven by ferroelectric polarization for efficient visual system applications. The downward polarization of the ferroelectric material offers an ultrahigh electrostatic field for doping p-type graphene with an anticipated Fermi level. By optimizing the geometric parameters of the devices and modulating the carrier behaviors of graphene, our plasmonic devices exhibit a tunable spectral response in a range of 1.7–6.0 THz with continuous transmission values. The alloptical neural network using graphene plasmonic surfaces designed in this study exhibited excellent performance in visual preprocessing and convolutional filtering and achieved an ultrahigh recognition accuracy of up to 99.3% in training the Modified National institute of Standards and Technology(MNIST) handwritten digit dataset. These features demonstrate the great potential of graphene plasmonic devices for future smart artificial vision systems.

关键词： graphene plasmon ferroelectric frequency selective surface artificial vision system

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Demonstration of vertical Ga2O3 Schottky barrier diodes directly on heavily doped single-crystal substrate using thermal oxidation technology

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The European Physical Journal Special Topics 2025年第2期234卷 283-290页

作者： Liu, Hongyu Han, Shida Lu, Xiaoli Wang, Yuangang Dun, Shaobo Han, Tingting Lv, Yuanjie Feng, Zhihong State Key Laboratory of Wide Bandgap Semiconductor Devices and Integrated Technology School of Microelectronics Xidian University Xi’an China National Key Laboratory of Solid-State Microwave Devices and Circuits Hebei Semiconductor Research Institute Shijiazhuang China

In this letter, by implementing thermal oxidation (TO) technology, vertical Ga2O3 Schottky barrier diodes were directly fabricated on a heavily doped single-crystal (001) β-Ga2O3 substrate without epitaxial growth. The electron concentration in near-surface region of the Ga2O3 substrate was greatly reduced by introducing high-temperature TO processing. X-ray photoelectron spectroscopy (XPS) and photoluminescence (PL) results indicated that the oxygen vacancy (VO) content in the near-surface region was significantly decreased, while a 500–700 nm acceptor-like defect energy level combining multiple gallium vacancy (VGa) generated, and compensated for, the free carriers after annealing in an oxygen-rich atmosphere at high temperature. The annealing temperature and time were analyzed and optimized. Finally, vertical β-Ga2O3 SBDs with a breakdown voltage (Vbr) of 460 V, specific on-resistance (Ron,sp) of 10.5 mΩ·cm2 and a power figure-of-merit (PFOM) of 20.2 MW/cm2, were demonstrated when the annealing temperature and time were 900 °C and 2 h. These results indicate that vertical β-Ga2O3 SBDs can be directly fabricated on a single-crystal substrate without epitaxial growth, providing a new method of reducing the cost of such devices.

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Impact of O_(2)post oxidation annealing on the reliability of SiC/SiO_(2)MOS capacitors

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Chinese Physics B 2021年第7期30卷 461-466页

作者： Peng Liu Ji-Long Hao Sheng-Kai Wang Nan-Nan You Qin-Yu Hu Qian Zhang Yun Bai Xin-Yu Liu Key Laboratory of Microelectronics Devices&Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China University of Chinese Academy of Sciences Beijing 100049China High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China

The effects of dry O_(2)post oxidation annealing(POA)at different temperatures on SiC/SiO_(2)stacks are comparatively studied in this *** results show interface trap density(Dit)of SiC/SiO_(2)stacks,leakage current density(Jg),and time-dependent dielectric breakdown(TDDB)characteristics of the oxide,are affected by POA temperature and are closely ***,Dit,Jg,and inverse median lifetime of TDDB have the same trend against POA temperature,which is instructive for SiC/SiO_(2)interface quality ***,area dependence of TDDB characteristics for gate oxide on SiC shows different electrode areas lead to same slope of TDDB Weibull curves.

关键词： SiC O_(2)post oxidation annealing interface traps MOS

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Step-edge controlled fast growth of wafer-scale MoSe_(2)films by MOCVD

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Nano Research 2023年第7期16卷 9577-9583页

作者： Rui Ji Jing Liao Lintao Li Rongji Wen Mengjie Liu Yifeng Ren Jianghua Wu Yunrui Song Minru Qi Zhixing Qiao Liwei Liu Chengbing Qin Yu Deng Yongtao Tian Suotang Jia Yufeng Hao Key Laboratory of Material Physics of Ministry of Education School of Physics and MicroelectronicsZhengzhou UniversityZhengzhou 450052China National Laboratory of Solid State Microstructures College of Engineering and Applied SciencesJiangsu Key Laboratory of Artificial Functional Materialsand Collaborative Innovation Center of Advanced MicrostructuresNanjing UniversityNanjing 210023China State Key Laboratory of Quantum Optics and Quantum Optics Devices Institute of Laser SpectroscopyShanxi UniversityTaiyuan 030006China Collaborative Innovation Center of Extreme Optics Shanxi UniversityTaiyuan 030006China College of Medical Imaging Shanxi Medical UniversityTaiyuan 030001China MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices School of Integrated Circuits and ElectronicsBeijing Institute of TechnologyBeijing 100081China

Two-dimensional(2D)transition metal dichalcogenides(TMDCs),due to their unique physical properties,have a wide range of applications in the next generation of electronics,optoelectronics,and ***-scale preparation of high-quality TMDCs films is critical to realize these potential *** we report a study on metal-organic chemical vapor deposition(MOCVD)growth of wafer-scale MoSe_(2)films guided by the crystalline step edges of miscut sapphire *** established that the nucleation density and growth rate of MoSe_(2)films were positively correlated with the step-edge density and negatively with the growth *** a certain temperature,the MoSe_(2)domains on the substrate with high step-edge density grow faster than that with low *** a result,wafer-scale and continuous MoSe_(2)films can be formed in a short duration(30 min).The MoSe_(2)films are of high crystalline quality,as confirmed by systematic Raman and photoluminescence(PL)*** results provide an important methodology for the rapid growth of wafer-scale TMDCs,which may promote the application of 2D semiconductors.

关键词： MoSe_(2) nucleation density transition metal dichalcogenides metal-organic chemical vapor deposition(MOCVD) waferscale two-dimensional(2D)semiconductor

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High-quality and large-grain epi-like Si film by NiSi2-seed initiated lateral epitaxial crystallization（SILEC）

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Science China(Information Sciences) 2020年第12期63卷 272-274页

作者： Yuancheng YANG Baotong ZHANG Xiaoqiao DONG Xiaokang LI Shuang SUN Qifeng CAI Ran BI Xiaoyan XU Ming LI Ru HUANG Key Laboratory of Microelectronic Devices and Circuits Institute of MicroelectronicsPeking University

Dear editor,Three-dimensional monolithic integration (3D-MI)has recently emerged for both "more Moore"and "more than Moore" applications, because of its high integration density, high bandwidth and multi-functions [1]. With 3D-MI, different types of devices can be stacked on the same platform and in a single process flow.

关键词： 3D monolithic integration (3D-MI) NiSi2-seed low-temperature crystallization epitaxial barrier layer metal contamination

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