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Progress in Group Ⅲ nitride semiconductor electronic devices

Journal of Semiconductors 2012年第8期33卷 1-8页

作者：郝跃张金风沈波刘新宇 Key Laboratory of Wide Band Gap Semiconductor Materials and Devices School of MicroelectronicsXidian University School of Physics Peking University Key Laboratory of Microwave Devices and Integrated Circuits Institute of MicroelectronicsChinese Academy of Sciences

Recently there has been a rapid domestic development in group iII nitride semiconductor electronic materials and devices. This paper reviews the important progress in GaN-based wide bandgap microelectronic materials and devices in the key Program of the National Natural Science Foundation of China, which focuses on the research of the fundamental physical mechanisms of group III nitride semiconductor electronic materials and devices with the aim to enhance the crystal quality and electric performance of GaN-based electronic materials, develop new GaN heterostructures, and eventually achieve high performance GaN microwave power devices. Some remarkable progresses achieved in the program will be introduced, including those in GaN high electron mobility transistors （HEMTs） and metal-oxide-semiconductor high electron mobility transistors （MOSHEMTs） with novel high-k gate insulators, and material growth, defect analysis and material properties of InAlN/GaN heterostructures and HEMT fabrication, and quantum transport and spintronic properties of GaN-based heterostructures, and high- electric-field electron transport properties of GaN material and GaN Gunn devices used in terahertz sources.

关键词： AlGaN/GaN InAlN/GaN HEMT MOSHEMT Gunn diode

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A Ku band internally matched high power GaN HEMT amplifier with over 30%of PAE

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Journal of Semiconductors 2012年第1期33卷 52-55页

作者： Ge Qin Chen xiaojuan Luo Weijun Yuan Tingting Pu Yan Liu Xinyu Key Laboratory of Microwave Devices&Integrated Circuits Institute of Microelectronics Chinese Academy of SciencesBeijing 100029China

We report a high power Ku band internally matched power amplifier （IMPA） with high power added efficiency （PAE） using 0.3 μm A1GaN/GaN high electron mobility transistors （HEMTs） on 6H-SiC substrate. The intemal matching circuit is designed to achieve high power output for the developed devices with a gate width of 4 mm. To improve the bandwidth of the amplifier, a T type pre-matching network is used at the input and output circuits, respectively. After optimization by a three-dimensional electromagnetic （3D-EM） simulator, the amplifier demonstrates a maximum output power of 42.5 dBm （17.8 W）, PAE of 30% to 36.4% and linear gain of 7 to 9.3 dB over 13.8-14.3 GHz under a 10% duty cycle pulse condition when operated at Vas = 30 V and Vgs = -4 V. At such a power level and PAE, the amplifier exhibits a power density of 4.45 W/mm.

关键词： Ku-band A1GaN/GaN HEMTs IMPA output power PAE

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Effect of varying layouts on the gate temperature for multi-finger AlGaN/GaN HEMTs

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Journal of Semiconductors 2012年第9期33卷 60-64页

作者：王建辉王鑫华庞磊陈晓娟金智刘新宇 Key Laboratory of Microwave Devices&Integrated Circuits Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China

The impacts of varying layout geometries on the channel temperature of multi-finger AIGaN/GaN HEMTs are investigated by three-dimensional （3-D） thermal simulations. Micro-Raman thermography is selected to obtain a detailed and accurate temperature distribution of the sample for the verification of the 3-D thermal models. Thermal boundary resistance （TBR） plays an important role in the temperature distribution and is taken into account in the thermal model in order to improve the accuracy of the simulated results. The influence from the number of fingers, finger width and gate pitch on the gate temperature are systematically analysed using 3-D thermal simulations with validated model parameters. Furthermore, a robust method that could efficiently reduce the thermal crosstalk of multi-finger AlGaN/GaN HEMTs is proposed to optimize the thermal design of the device.

关键词： AlGaN/GaN HEMTs thermal simulation thermal boundary resistance thermal management Raman spectroscopy

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Reactive ion etching of Germanium using SF6/CHF3/He gas mixture

Reactive ion etching of Germanium using SF6/CHF3/He gas mixt...

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2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012

作者： Li, Min Lin, Meng Yun, Quanxin Li, Zhiqiang An, Xia Li, Ming Zhang, Xing Ru, Huang Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing 100871 China

ISBN: (纸本)9781467324724

The effect of CHF3 gas flow rate on the trench shape and etch rate was studied for germanium-based device fabrication. In this study, a sidewall tilt angle larger than 80° with the trench depth of 300nm was achieved by optimizing the flow rate ratio of SF6/CHF3/He gas mixture. Then, based on the experimental results, a Linear Reactive Ion Etching (RIE) Model was proposed to predict the optimized composition of the SF6/CHF3/He gas mixture to obtain steep trenches with low etch rate, which may provide the guideline for the germanium etching process design. © 2012 IEEE.

关键词： Sulfur hexafluoride

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Enhanced nitrogen plasma immersion passivation method for high-K/Ge stack formation

Enhanced nitrogen plasma immersion passivation method for hi...

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2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012

作者： Lin, Meng Yun, Quanxin Li, Min Li, Zhiqiang An, Xia Li, Ming Zhang, Xing Ru, Huang Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing 100871 China

ISBN: (纸本)9781467324724

In this paper, an enhanced Ge surface passivation method by nitrogen plasma immersion with adding RIE power is presented and experimentally demonstrated. With the acceleration effect resulting from electric field induced by proper RIE power, more nitrogen plasma will drift to Ge surface to passivate the dangling bonds. It is shown that nitrogen plasma immersion with RIE power is efficient in suppressing Ge suboxide growth during high-K dielectric deposition, reducing interface states and improving the C-V characteristic of both p-MOS and n-MOS capacitors in terms of flat-band voltage and hysteresis. © 2012 IEEE.

关键词： Interface states

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Investigation on Channel Hot Carrier degradation of ultra deep submicron SOI pMOSFETs

Investigation on Channel Hot Carrier degradation of ultra de...

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2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012

作者： Huang, Liang-Xi An, Xia Tan, Fei Wu, Wei-Kang Ru, Huang Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University 100871 Beijing China

ISBN: (纸本)9781467324724

The bias dependence of Channel Hot Carrier (CHC) degradation in 0.18μm SOI pMOSFETs is investigated in this paper. Two classical bias modes (V g@Isubmax and Vg=Vd) were applied to analyze the CHC degradation behavior of SOI pMOSFETs. The results show that at low Vg, hot carriers injection produced by impact ionization is the main factor contributed to degradation. However, the degradation stressed at high Vg is controlled by both CHC and NBTI effect, showing the NBTI-like behavior at room temperature which indicates that NBTI effect is the dominant factor. A possible mechanism is put forward to explain the enhanced CHC degradation under Vg=Vd compared with pure NBTI degradation. The influence of floating body on the performance degradation of PDSOI devices is also investigated. © 2012 IEEE.

关键词： Negative bias temperature instability

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Heavy-ion-induced permanent damage in ultra-deep submicron fully depleted SOI devices

Heavy-ion-induced permanent damage in ultra-deep submicron f...

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2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012

作者： Tan, Fei An, Xia Huang, Liangxi Zhang, Xing Ru, Huang Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University 100871 Beijing China

ISBN: (纸本)9781467324724

In this paper, heavy-ion-induced permanent damage in fully depleted silicon-on-insulator (FD SOI) devices are investigated. After exposure to heavy ions, the characteristics degradation of FD SOI nMOSFET are presented, which is due to the microdose effect in the oxide layer and the displacement damage in silicon film. Besides, the measured results also exhibit strong device geometry dependence. The electrical properties degradation such as the off-state leakage current and the on-state current become more serious with the gate length or gate width decreasing, which indicates that the heavy-ion-induced damage in ultra-deep submicron FD SOI devices can not be ignored and should be paid more attention for radiation hardened applications. © 2012 IEEE.

关键词： Heavy ions

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Contact size scaling of a W-contact phase-change memory cell based on numerical simulation

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Journal of Semiconductors 2012年第10期33卷 53-57页

作者：魏益群林信南贾宇超崔小乐张兴宋志棠 Key Laboratory of Integrated Microsystems Shenzhen Graduate School of Peking University TSRC Key Laboratory of Microelectronic Devices and CircuitsInstitute of MicroelectronicsSchool of Electronics and Computer SciencePeking University State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences

In the design of phase-change memory（PCM）,it is important to perform numerical simulations to predict the performances of different device *** work presents a numerical simulation using a coupled system including Poisson＇s equation,the current continuity equation,the thermal conductivity equation,and phase-change dynamics to simulate the thermal and electric characteristics of phase-change *** method discriminates the common numerical simulation of PCM cells,from which it applies Possion＇s equation and current continuity equations instead of the Laplace equation to depict the electric characteristics of PCM cells,which is more adoptable for the semiconductor characteristics of phase-change *** results show that the simulation agrees with the measurement,and the scalability of PCM is predicted.

关键词： phase-change memory scaling numerical simulation

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A 150%enhancement of PMOSFET mobility using hybrid orientation

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Journal of Semiconductors 2012年第6期33卷 20-23页

作者：唐昭焕谭开洲崔伟张静钟怡徐世六郝跃张鹤鸣胡辉勇张正璠胡刚毅 Science and Technology on Analog Integrated Circuit Laboratory Sichuan Institute of Solid-State Circuits China Electronics Technology Group Corp Key Laboratory of the Ministry of Education for Wide-Band Gap Semiconductor Materials and Devices School of MicroelectronicsXidian University

A high-performance PMOSFET based on silicon material of hybrid orientation is *** orientation wafers,integrated by（100） and（110） crystal orientation,are fabricated using silicon-silicon bonding, chemical mechanical polishing,etching silicon and non-selective expitaxy.A PMOSFET with W/L = 50μm/8μm is also processed,and the measured results show that the drain-source current and peak mobility of the PMOSFET are enhanced by up to 50.7%and 150%at V_（gs） =-15 V and V_（ds） =-0.5 V,*** mobility values are higher than that reported in the literature.

关键词： hybrid orientation non-selective expitaxy carrier mobility （110） crystal orientation PMOSFET chemical mechanical polishing

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A SPICE model for a phase-change memory cell based on the analytical conductivity model

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Journal of Semiconductors 2012年第11期33卷 52-56页

作者：魏益群林信南贾宇超崔小乐何进张兴 The Key Laboratory of Integrated Microsystems Shenzhen Graduate School of Peking University Peking University Shenzhen SOC Key Laboratory PKU-HKUSTShenzhen-Hong Kong Institute The Kev Laboratorv of Integrated Microsvstems.Shenzhen Graduate School of Peking University Key Laboratory of Microelectronic Devices and Circuits Institute of MicroelectronicsSchool of Electronics and Computer SciencePeking University

By way of periphery circuit design of the phase-change memory,it is necessary to present an accurate compact model of a phase-change memory cell for the circuit *** with the present model,the model presented in this work includes an analytical conductivity model,which is deduced by means of the carrier transport theory instead of the fitting model based on the *** addition,this model includes an analytical temperature model based on the 1D heat-transfer equation and the phase-transition dynamic model based on the JMA equation to simulate the phase-change *** above models for phase-change memory are integrated by using Verilog-A language,and results show that this model is able to simulate theⅠ-Ⅴcharacteristics and the programming characteristics accurately.

关键词： phase-change memory compact model analytical conductivity

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