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检索条件"机构=Key Laboratory of Microelectronics Devices and Circuits(MoB)Institute of Microelectronics"
422 条 记 录,以下是281-290 订阅
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A novel multi-finger layout strategy for GGnMOS ESD protection device
A novel multi-finger layout strategy for GGnMOS ESD protecti...
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2011 IEEE 9th International Conference on ASIC, ASICON 2011
作者: Zhang, Peng Wang, Yuan Jia, Song Zhang, Xing Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing 100871 China
A novel layout strategy for on-chip ESD protection application is presented to solve the non-uniformity turn-on phenomenon of multi-finger gate-grounded nMOS (GGnMOS). The multi-finger gates as well as drains and sour... 详细信息
来源: 评论
Effective design for crff sigma-delta modulators using inverters based on 0.13μm CMOS
Effective design for crff sigma-delta modulators using inver...
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作者: Li, Hongyi Wang, Yuan Jia, Song Zhang, Xing Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing China
In this paper, an efficient method to relax timing requirements of CRFF sigma-delta modulators has been proposed. A system optimization to circuit level design was finished. Class-C inverter was used to realize half d... 详细信息
来源: 评论
A novel dynamic element matching technique in current-steering DAC
A novel dynamic element matching technique in current-steeri...
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IEEE Conference on Electron devices and Solid-State circuits
作者: Wei Su Yuan Wang Junlei Zhao Song Jia Xing Zhang Key Laboratory of Microelectronic Devices and Circuits (MOB) Institute of Microelectronics Peking University Beijing China
This paper presents a novel dynamic element matching (DEM) method called Thermo Data Weighted Average (TDWA) for Nyquist-rate current - steering digital to analog converter (DAC). When the input code changes, it only ... 详细信息
来源: 评论
Experimental insights on the degradation and recovery of pMOSFET under non-uniform NBTI stresses
Experimental insights on the degradation and recovery of pMO...
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International Symposium on Physical & Failure Analysis of Integrated circuits
作者: Yandong He Ganggang Zhang Institute of Microelectronics and Key Laboratory of Microelectronics Devices and Circuits Peking University Beijing China
A detail experimental study on the reliability degradation of pMOSFET under non-uniform NBTI stress was conducted. The relationship of drain bias under non-uniform NBTI stress was obtained and a turning curve was foun... 详细信息
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An effective buffer space management in Serial RapidIO endpoint
An effective buffer space management in Serial RapidIO endpo...
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Asia Pacific Conference on Postgraduate Research in microelectronics & Electronics (PrimeAsia)
作者: Wu Fengfeng Jia Song Wang Yuan Key Laboratory of Microelectronics Devices and Circuits (MOE) Institute of Microelectronics Peking University Beijing China
RapidIO is a high performance open standard for the next-generation embedded interconnection technology. In this paper, an improved pivotal buffer core which plays a crucial role in the RapidIO packet transmission is ... 详细信息
来源: 评论
Analysis of the Influence of Contact Position to the ESD Protection Ability in Ggnmos Device
Analysis of the Influence of Contact Position to the ESD Pro...
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The second International Conference of Electrical and Electronics Engineering(ICEEE 2011)
作者: Peng Zhang Yuan Wang Song Jia Xing Zhang Key Laboratory of Microelectronic Devices and Circuits Institute of MicroelectronicsPeking University
For the silicided GGn MOS as ESD protection device, the current localization in the n+ diffusion duo to the short contact spacing often degrades the ESD performance of the device. By enlarging the contact spacing, bal... 详细信息
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A novel on-chip CMOS current sensor implemented by switched capacitors for a current-mode control DC-DC buck converter
A novel on-chip CMOS current sensor implemented by switched ...
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IEEE Conference on Electron devices and Solid-State circuits
作者: Yong Zhang Wengao Lu Juan Guo Yajing Zhang Zhongjian Chen Yacong Zhang Lijiu Ji Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University China
A novel on-chip CMOS current sensor implemented by switched capacitors for a current - mode buck converter is presented in this paper. This proposed current sensing circuit does not need another sense MOSFET and a vol... 详细信息
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A low power high speed readout circuit for 320×320 IRFPA
A low power high speed readout circuit for 320×320 IRFPA
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IEEE Conference on Electron devices and Solid-State circuits
作者: Guannan Wang Wengao Lu Ran Fang Li You Yacong Zhang Zhongjian Chen Lijiu Ji Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University China
A low power high speed Readout Integrated Circuit(ROIC) design for 320 × 320 IRFPA is proposed in this paper. The ROIC operates as follows: after integration phase, voltages on column bus of odd rows and even row... 详细信息
来源: 评论
Novel single-loop sigma-delta modulator with extended dynamic range
Novel single-loop sigma-delta modulator with extended dynami...
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IEEE Conference on Electron devices and Solid-State circuits
作者: Hongyi Li Yuan Wang Song Jia Xing Zhang Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing China
Using an auxiliary quantizer before unity-STF SDM, a novel 3 rd -order dual-quantizer SDM with extended dynamic range is presented. With hybrid distributed feedback & feedforward paths and an internal feedforward ... 详细信息
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Method for direct characterizing interface traps in STI-type high voltage SOI LDMOSFETs
Method for direct characterizing interface traps in STI-type...
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IEEE SOI-3D-Subthreshold microelectronics Technology Unified Conference (S3S)
作者: Yandong He Ganggang Zhang Institute of Microelectronnics and Key Laboratory of Microelectronics Devices and Circuits Peking University Beijing China
Based on the forward gated diode recombination current, a method for direct characterizing interface traps in 60V STI lateral high voltage SOI MOSFETs was proposed. Thus the interface traps induced by off-state or hot... 详细信息
来源: 评论