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检索条件"机构=Key Laboratory of Microelectronics Devices and Circuits(MoB)Institute of Microelectronics"
422 条 记 录,以下是301-310 订阅
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Improved multi-loop SMASH sigma-delta modulator for wideband applications
Improved multi-loop SMASH sigma-delta modulator for wideband...
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2010 IEEE International Conference of Electron devices and Solid-State circuits, EDSSC 2010
作者: Li, Hongyi Wang, Yuan Jia, Song Zhang, Xing Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing China
In this paper, a novel design method has been proposed to realize feed-forward low-distortion unity STF sigma-delta modulators which are the critical blocks in multi-loop SMASH structure. Using the method, a timing-re... 详细信息
来源: 评论
Cascade 2-2 sigma-delta modulators for wideband high-resolution applications
Cascade 2-2 sigma-delta modulators for wideband high-resolut...
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2nd Asia Pacific Conference on Postgraduate Research in microelectronics and Electronics, PrimeAsia 2010
作者: Li, Hongyi Wang, Yuan Jia, Song Zhang, Xing Key Laboratory of Microelectronic Devices Circuits Institute of Microelectronics Peking University Beijing China
In this paper, several techniques which relax circuit requirements of building blocks are presented to effectively realize wideband high-resolution cascade sigma-delta modulator. Three cascade structures have been pro... 详细信息
来源: 评论
A 14-bit 300MHz pipelined DEM DAC with enhanced dynamic linearity
A 14-bit 300MHz pipelined DEM DAC with enhanced dynamic line...
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2nd Asia Pacific Conference on Postgraduate Research in microelectronics and Electronics, PrimeAsia 2010
作者: Junlei, Zhao Yuan, Wang Zhihui, Zhao Song, Jia Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing China
This paper presents a 14-bit digital-to-analog converter (DAC) with pipelined dynamic element matching to eliminate signal-dependent distortions and achieve good linearity at high sampling frequencies. A return-to-zer... 详细信息
来源: 评论
A clock and data recovery circuit for 3.125Gb/s RapidIO SerDes
A clock and data recovery circuit for 3.125Gb/s RapidIO SerD...
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2010 IEEE International Conference of Electron devices and Solid-State circuits, EDSSC 2010
作者: Zhihui, Zhao Yuan, Wang Junlei, Zhao Hailing, Yang Song, Jia Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing China
This work presents a low-power low-cost CDR design for RapidIO SerDes. The design is based on phase interpolator, which is controlled by a synthesized standard cell digital block. Half-rate architecture is adopted to ... 详细信息
来源: 评论
Study of LDMOS-SCR: A high voltage ESD protection device
Study of LDMOS-SCR: A high voltage ESD protection device
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2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology
作者: Zhang, Peng Wang, Yuan Jia, Song Zhang, Xing Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing 100871 China
A novel LDMOS-SCR device for electrostatic discharge protection of power device is presented. The device is able to be fabricated in SOI 40V LDMOS process without any extra mask. Due to the new structure, a proper and... 详细信息
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Pulse voltage dependent resistive switching behaviors of HfO 2-based RRAM
Pulse voltage dependent resistive switching behaviors of HfO...
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2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology
作者: Gao, Bin Chen, Bing Chen, Yuansha Liu, Lifeng Liu, Xiaoyan Han, Ruqi Kang, Jinfeng Institute of Microelectronics Peking University Key Laboratory of Microelectronic Devices and Circuits Beijing 100871 China
Voltage pulse dependent resistive switching behavior during SET process in HfO2-based RRAM device is investigated. When a resistor is connected in series to RRAM during the SET process, the resistance uniformity can b... 详细信息
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Impacts of diameter-dependent annealing on S/D extension random dopant fluctuations in silicon nanowire MOSFETs
Impacts of diameter-dependent annealing on S/D extension ran...
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2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology
作者: Yu, Tao Wang, Runsheng Ding, Wei Huang, Ru Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing 100871 China
In this paper, the impacts of diameter-dependent annealing (DDA) effect on nanowire S/D extension random dopant fluctuations (SDE-RDF) in silicon nanowire MOSFETs (SNWTs) are investigated, in terms of electrostatic pr... 详细信息
来源: 评论
Analysis of LDMOS-SCR ESD protection device for 60V SOI BCD technology
Analysis of LDMOS-SCR ESD protection device for 60V SOI BCD ...
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2010 IEEE International Conference of Electron devices and Solid-State circuits, EDSSC 2010
作者: Zhang, Peng Wang, Yuan Jia, Song Zhang, Xing Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing 100871 China
A study of two major types of LDMOS-SCR electrostatic discharge protection devices for 60V SOI BCD technology is presented. The difference of the P-anode implant positions influences the triggering mechanism of the tw... 详细信息
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Predictive modeling of capacitance and resistance in gate-all-around cylindrical nanowire MOSFETs for parasitic design optimization
Predictive modeling of capacitance and resistance in gate-al...
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2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology
作者: Xu, Qiumin Zou, Jibin Luo, Jieyin Wang, Runsheng Huang, Ru Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing 100871 China
This paper presents a predictive electrostatic capacitance and resistance compact model of multiple gate MOSFET with cylindrical conducting channels, taking into account parasitic effects, quantum confinement and quas... 详细信息
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Buffer design based on flow control in RapidIO
Buffer design based on flow control in RapidIO
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Asia Pacific Conference on Postgraduate Research in microelectronics & Electronics (PrimeAsia)
作者: Xiongbo Zhao Song Jia Yuan Wang Guirong Wu Fengfeng Wu Kai Yang Key Laboratory of Microelectronics Devices and Circuits Institute of Microelectronics Peking University Beijing China
RapidIO is an open standard that provides high-performance interconnect for chip-to-chip, board-to-board, and chassis-to-chassis communications. In this paper, we present an executable RapidIO interconnect in which an... 详细信息
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