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检索条件"机构=Key Laboratory of Microelectronics Devices and Circuits(MoB)Institute of Microelectronics"
422 条 记 录,以下是311-320 订阅
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A novel nitrogen-doped SiOx resistive switching memory with low switching voltages
A novel nitrogen-doped SiOx resistive switching memory with ...
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2010 15th Silicon Nanoelectronics Workshop, SNW 2010
作者: Gao, Dejin Zhang, Lijie Huang, Ru Wang, Runsheng Wu, Dongmei Kuang, Yongbian Tang, Yu Yu, Zhe Wang, Albert Z. H. Wang, Yangyuan Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University 100871 China Dept. of Electrical Engineering University of California Riverside CA 92521 United States
In summary, a novel RRAM with the structure of Cu/SixO yNz/W was first fabricated and its characteristics are thoroughly investigated. The new device exhibited low switching voltages and low reset currents, demonstrat... 详细信息
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Design of RapidIO logical core based on safety arbitration mechanisms
Design of RapidIO logical core based on safety arbitration m...
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Asia Pacific Conference on Postgraduate Research in microelectronics & Electronics (PrimeAsia)
作者: Wu Fengfeng Jia Song Yang Kai Zhao Xiongbo Wu Guirong Key Laboratory of Microelectronics Devices and Circuits (MOE) Institute of Microelectronics Peking University Beijing China
RapidIO is an emerging high-performance and point-to-point packetized interconnection technology. In this paper, the design of the logical core based on safety arbitration mechanisms is described in detail. The packin... 详细信息
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Two Effective Single-Loop High-Performance Sigma-Delta Modulators Based on 0.13μm CMOS
Two Effective Single-Loop High-Performance Sigma-Delta Modul...
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2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)
作者: Hongyi Li Yuan Wang Song Jia Xing Zhang Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing China
In this paper, two high-resolution medium-bandwidth single-loop 4th-order single-bit sigma-delta modulators using a feed-forward and a feedback topology respectively are implemented in 0.13μm CMOS technology. The ove... 详细信息
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Simulation of line-edge roughness effects in silicon nanowire MOSFETs
Simulation of line-edge roughness effects in silicon nanowir...
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International Conference on Simulation of Semiconductor Processes and devices (SISPAD)
作者: Tao Yu Runsheng Wang Ru Huang Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing China
In this paper, the effects of nanowire (NW) line-edge roughness (LER) in gate-all-around (GAA) silicon nanowire MOSFETs (SNWTs) are investigated by 3-D statistical simulation in terms of both performance variation and... 详细信息
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Improved multi-loop SMASH sigma-delta modulator for wideband applications
Improved multi-loop SMASH sigma-delta modulator for wideband...
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IEEE Conference on Electron devices and Solid-State circuits
作者: Hongyi Li Yuan Wang Song Jia Xing Zhang Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing China
In this paper, a novel design method has been proposed to realize feed-forward low-distortion unity STF sigma-delta modulators which are the critical blocks in multi-loop SMASH structure. Using the method, a timing-re... 详细信息
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New observations of suppressed randomization in LER/LWR of Si nanowire transistors: Experiments and mechanism analysis
New observations of suppressed randomization in LER/LWR of S...
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International Electron devices Meeting (IEDM)
作者: Runsheng Wang Tao Yu Ru Huang Yujie Ai Shuangshuang Pu Zhihua Hao Jing Zhuge Yangyuan Wang Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing China
In this paper, the nanowire (NW) line-edge/width roughness (LER/LWR) effects in Si nanowire transistors (SNWTs) are investigated by both experiments and theoretical analysis. New LER/LWR characteristics are first obse... 详细信息
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A 14-bit 300MHz pipelined DEM DAC with enhanced dynamic linearity
A 14-bit 300MHz pipelined DEM DAC with enhanced dynamic line...
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Asia Pacific Conference on Postgraduate Research in microelectronics & Electronics (PrimeAsia)
作者: Zhao Junlei Wang Yuan Zhao Zhihui Jia Song Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing China
This paper presents a 14-bit digital-to-analog converter (DAC) with pipelined dynamic element matching to eliminate signal-dependent distortions and achieve good linearity at high sampling frequencies. A return-to-zer... 详细信息
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A clock and data recovery circuit for 3.125Gb/s RapidIO SerDes
A clock and data recovery circuit for 3.125Gb/s RapidIO SerD...
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IEEE Conference on Electron devices and Solid-State circuits
作者: Zhao Zhihui Wang Yuan Zhao Junlei Yang Hailing Jia Song Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing China
This work presents a low-power low-cost CDR design for RapidIO SerDes. The design is based on phase interpolator, which is controlled by a synthesized standard cell digital block. Half-rate architecture is adopted to ... 详细信息
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Cascade 2–2 sigma-delta modulators for wideband high-resolution applications
Cascade 2–2 sigma-delta modulators for wideband high-resolu...
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Asia Pacific Conference on Postgraduate Research in microelectronics & Electronics (PrimeAsia)
作者: Hongyi Li Yuan Wang Song Jia Xing Zhang Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing China
In this paper, several techniques which relax circuit requirements of building blocks are presented to effectively realize wideband high-resolution cascade sigma-delta modulator. Three cascade structures have been pro... 详细信息
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Study of LDMOS-SCR: A High Voltage ESD Protection Device
Study of LDMOS-SCR: A High Voltage ESD Protection Device
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2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)
作者: Peng Zhang Yuan Wang Song Jia Xing Zhang Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing 100871 China
A novel LDMOS-SCR device for electrostatic discharge protection of power device is presented. The device is able to be fabricated in SOI 40V LDMOS process without any extra mask. Due to the new structure, a proper and... 详细信息
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