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检索条件"机构=Key Laboratory of Microelectronics Devices and Circuits(MoB)Institute of Microelectronics"
425 条 记 录,以下是361-370 订阅
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A Dual Loop Dual VCO CMOS PLL Using a Novel Coarse Tuning Technique for DTV
A Dual Loop Dual VCO CMOS PLL Using a Novel Coarse Tuning Te...
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2008 9th International Conference on Solid-State and Integrated-Circuit Technology
作者: Congyin Shi Huaizhou Yang Huiling Xiao Junhua Liu Huailin Liao Key Laboratory of Microelectronic Devices and Circuits Institute of MicroelectronicsPeking University
A CMOS phase-locked loop(PLL) which synthesizes frequencies between 474 and S58 MHz in steps of lMHz and settles in less than 180μs is *** PLL can be implemented as a sub-circuit for a frequency synthesizer which s... 详细信息
来源: 评论
Low Power Folding/Interpolating ADC with a Novel Dynamic Encoder Based on ROM Theory
Low Power Folding/Interpolating ADC with a Novel Dynamic Enc...
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2008 9th International Conference on Solid-State and Integrated-Circuit Technology
作者: Jilei Yin Yuan Wang Song Jia Zhen Liu Key Laboratory of Microelectronic Devices and Circuits Institute of MicroelectronicsPeking University
A 6-bit 200Msps Folding/Interpolating analog to digital converter(ADC) with a novel dynamic encoder based on Rom theory is *** Precharge & Evaluate dynamic circuit is employed in the novel encoder and the bit sync... 详细信息
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Optimization of explicit-pulsed flip-flops for high performance
Optimization of explicit-pulsed flip-flops for high performa...
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2008 9th International Conference on Solid-State and Integrated-Circuit Technology
作者: Xiaoyang Zhang Song Jia Yuan Wang Ganggang Zhang Key Laboratory of Microelectronic Devices and Circuits Institute of MicroelectronicsPeking University
Two novel structures for explicit-pulsed flip-flops are proposed in this *** charging and discharging time are greatly reduced due to the lower capacitive load of interval nodes in the new structures,and the short cir... 详细信息
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A Comprehensive Study on Schottky Barrier Nanowire Transistors (SB-NWTs):Principle,Physical Limits and Parameter Fluctuations
A Comprehensive Study on Schottky Barrier Nanowire Transisto...
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2008 9th International Conference on Solid-State and Integrated-Circuit Technology
作者: Liangliang Zhang Zhaoyi Kang Runsheng Wang Ru Huang Key Laboratory of Microelectronic Devices and Circuits Institute of MicroelectronicsPeking University
P-type Schottky barrier nanowire transistors (p-SB-NWTs) are computational studied in this paper. We analyzed the working principle and physical limits on their performance in *** impact of Schottky contact of SB-NW... 详细信息
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Characteristics of sub-100nm Ferroelectric Field Effect Transistor with High-k Buffer Layer
Characteristics of sub-100nm Ferroelectric Field Effect Tran...
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2008 9th International Conference on Solid-State and Integrated-Circuit Technology
作者: Rui Jin Yuncheng Song Min Ji Honghua Xu Jinfeng Kang Ruqi Han Xiaoyan Liu Key Laboratory of Microelectronic Devices and Circuits Institute of MicroelectronicsPeking University
The simulation work is carried out using two dimension device simulator to investigate the characteristics of sub-100nm ferroelectric field effect transistor(FeFET) with high-k material as the buffer *** configuration... 详细信息
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The Implementation methods of High Speed FIR Filter on FPGA
The Implementation methods of High Speed FIR Filter on FPGA
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2008 9th International Conference on Solid-State and Integrated-Circuit Technology
作者: Ying Li Chungan Peng Dunshan Yu Xing Zhang Key Laboratory of Microelectronic Devices and Circuits Institute of MicroelectronicsPeking University
This paper implements a sixteen-order high-speed Finite Impose Response(TTR) filter with four different popular methods:Conventional multiplications and additions;Full custom Distributed Arithmetic(DA) scheme;Add-and-... 详细信息
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A Low Power ROIC Design for 1024×1024 IRFPA
A Low Power ROIC Design for 1024×1024 IRFPA
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2008 9th International Conference on Solid-State and Integrated-Circuit Technology
作者: Chang Liu Wengao Lu Zhongjian Chen Jing Li Yacong Zhang Lijiu Ji Key Laboratory of Microelectronic Devices and Circuits Institute of MicroelectronicsPeking University
A low power Read-Out Integrated Circuit(ROIC) for a short-wave Infra-Red Focal Plane Array(IRFPA) is designed as a prototype for 1024×1024 image *** integration and readout scheme as well as highly efficient powe... 详细信息
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A Novel Linear Histogram BIST for ADC
A Novel Linear Histogram BIST for ADC
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2008 9th International Conference on Solid-State and Integrated-Circuit Technology
作者: Jianguo Ren Jianhua Feng Hongfei Ye Key Laboratory of Microelectronic Devices and Circuits Institute of MicroelectronicsPeking University
This paper proposes a novel histogram BIST scheme for ADC static *** a monotonic ADC, the out codes have an approximate stair-like proportional relationship to the input *** on this property,a space decomposition tech... 详细信息
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A Cost-Efficient 12-Bit 20Msamples/s Pipelined ADC
A Cost-Efficient 12-Bit 20Msamples/s Pipelined ADC
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2008 9th International Conference on Solid-State and Integrated-Circuit Technology
作者: Cao Junmin Chen Zhongjian Lu Wengao Zhao Baoying Key Laboratory of Microelectronic Devices and Circuits Institute of MicroelectronicsPeking University
A 12-bit 20MS/s cost-efficient pipelined analog-digital converter is presented.A dedicated first stage is proposed to eliminate the need of front-end SHA. Passive capacitor error-averaging technique(PCEA) and opamp sh... 详细信息
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Investigations on Proton-Irradiation-Induced Spacer Damage in Deep-Submicron MOSFETs
Investigations on Proton-Irradiation-Induced Spacer Damage i...
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2008 9th International Conference on Solid-State and Integrated-Circuit Technology
作者: Shoubin Xue Pengfei Wang Ru Huang Dake Wu Yunpeng Pei Wenhua Wang Xing Zhang Key Laboratory of Microelectronic Devices and Circuits Institute of MicroelectronicsPeking University
In this paper,we have focused our attention on DC characteristics degradation of 0.18μm MOSFETs after 10-MeV proton *** is shown that the threshold voltage shift,the transconductance degradation and the saturation dr... 详细信息
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