检索结果-内蒙古大学图书馆

A photomemory by selective-assembling hybrid porphyrin-silicon nanowire field-effect transistor

Science China(Information Sciences) 2020年第6期63卷 253-255页

作者： Gong CHEN Bocheng YU Xiaokang LI Xiaoqiao DONG Xiaoyan XU Zhihong LI Ru HUANG Ming LI Key Laboratory of Microelectronic Devices and Circuits(MOE) Institute of MicroelectronicsPeking University National Key Laboratory of Science and Technology on Micro/Nano Fabrication Peking University Faculty of Information Technology Beijing University of Technology

Dear editor,Recently, the integration of photosensitive material and electronic nanodevice has been the center of attention with Internet of things (IoT)technology development [1–3]. The immobilization of such photoactive molecules on the semiconductor surface was necessarily adopted to employ their photoelectric characteristics which can be observed in the solution. Porphyrin-based hybrid transistors have emerged as promising candidates for photonic sensing application due to the

关键词： A photomemory by selective-assembling hybrid porphyrin-silicon nanowire field-effect transistor

来源：评论

学校读者我要写书评

暂无评论

通过高通量研究识别用于本征陡坡晶体管的原子级薄孤立能带沟道材料

引用

Science Bulletin 2024年第10期69卷 1427-1436页

作者：屈恒泽张胜利曹江吴振华柴扬李卫胜李连忠任文才王欣然曾海波 MIIT Key Laboratory of Advanced Display Materials and Devices College of Material Science and EngineeringNanjing University of Science and TechnologyNanjing 210094China School of Electronic and Optical Engineering Nanjing University of Science and TechnologyNanjing 210094China Key Laboratory of Microelectronics Device and Integrated Technology Institute of Microelectronics of Chinese Academy of SciencesBeijing 100029China Department of Applied Physics The Hong Kong Polytechnic UniversityHong Kong 999077China National Laboratory of Solid State Microstructures School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced MicrostructuresNanjing UniversityNanjing 210023China Department of Mechanical Engineering The University of Hong KongHong Kong 999077China Shenyang National Laboratory for Materials Science Institute of Metal ResearchChinese Academy of SciencesShenyang 110016China School of Integrated Circuits Nanjing UniversitySuzhou 215163China Suzhou Laboratory Suzhou 215009China

Developing low-power FETs holds significant importance in advancing logic circuits,especially as the feature size of MOSFETs approaches sub-10 ***,this has been restricted by the thermionic limitation of SS,which is limited to 60 mV per decade at room ***,we proposed a strategy that utilizes 2D semiconductors with an isolated-band feature as channels to realize subthermionic SS in *** high-throughput calculations,we established a guiding principle that combines the atomic structure and orbital interaction to identify their sub-thermionic transport *** guides us to screen 192 candidates from the 2D material database comprising 1608 ***,the physical relationship between the sub-thermionic transport performances and electronic structures is further revealed,which enables us to predict 15 systems with promising device performances for low-power applications with supply voltage below 0.5 *** work opens a new way for the low-power electronics based on 2D materials and would inspire extensive interests in the experimental exploration of intrinsic steep-slope MOSFETs.

关键词： 2D materials Electronic band structures Transport properties Steep-slope transistors DFT-NEGF calculations

来源：评论

学校读者我要写书评

暂无评论

Polar Axis Orientation Control of Hafnium-Based Ferroelectric Capacitors with in-Situ AC Electric Bias During Rapid Thermal Annealing

Polar Axis Orientation Control of Hafnium-Based Ferroelectri...

引用

Symposium on VLSI Technology

作者： Zhaomeng Gao Tianjiao Xin D. Kai Qiwendong Zhao Yiwei Wang Cheng Liu X. Yilin Rui Wang Guangjie Shi Yunzhe Zheng Yonghui Zheng Yan Cheng Hangbing Lyu Key Laboratory of Polar Materials and Devices (MOE) East China Normal University Shanghai China National Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information Technology (CAS) Shanghai China Huawei Technologies Co. Shenzhen China Hualu Technologies Co. Shanghai China Institute of Microelectronics (CAS) Beijing China

ISBN: (数字)9798350361469

ISBN: (纸本)9798350361476

Hafnium-based ferroelectric (FE) thin films, prepared via atomic layer deposition (ALD), suffered from random oriented polar axis (PA), posing challenges and complexities for device scaling and variation. To effectively control the PA orientation and enhance polarization, we employed in-situ AC electric bias (E) during rapid thermal annealing (RTA) treatment (i.e. RTA+E). The main findings are: (1) Direct experimental evidence of variable orthogonal (0-) PA has been obtained for the first time, originating from tetragonal (T-) to O- transition in RTA cooling; (2) Applying E during cooling significantly enhances polarization in hafnium-based FE capacitors up to ~121.6% increase; (3) The RTA+E method effectively controls the O-PA orientation towards the out-of-plane E direction. These findings solidly demonstrate that the PA orientation of O-grain can be controlled in fluorite-type FE thin films.

关键词： Annealing Cooling Films Capacitors Position control Transforms Very large scale integration

来源：评论

学校读者我要写书评

暂无评论

非平衡压缩实现高灵敏度、线性响应协同的离电压力传感器

引用

Science Bulletin 2024年第14期69卷 2221-2230页

作者：杨静李志斌伍莹沈勇张明陈彬袁国江肖松华冯建松张旭唐毓蔚丁孙安陈晓龙王太宏 Department of Electrical and Electronic Engineering Southern University of Science and TechnologyShenzhen 518055China School of Microelectronics Southern University of Science and TechnologyShenzhen 518055China Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education Engineering Research Center of Advanced Semiconductor Technology and Application of Ministry of EducationChangsha Semiconductor Technology and Application Innovation Research InstituteCollege of Semiconductors(College of Integrated Circuits)Hunan UniversityChangsha 410082China School of Environmental and Chemical Engineering Yanshan UniversityQinhuangdao 066004China School of Integrated Circuits Nanjing UniversitySuzhou 215163China

Flexible pressure sensors with high sensitivity and linearity are highly desirable for robot sensing and human physiological signal ***,the current strategies for stabilizing axial microstructures(e.g.,micro-pyramids)are mainly susceptible to structural stiffening during compression,thereby limiting the realization of high sensitivity and ***,we report a bending-induced nonequilibrium compression process that effectively enhances the compressibility of microstructures,thereby crucially improving the efficiency of interfacial area growth of electric double layer(EDL).Based on this principle,we fabricate an iontronic flexible pressure sensor with vertical graphene(VG)array ***-high sensitivity(185.09 kPa^(-1))and linearity(R^(2)=0.9999)are realized over a wide pressure range(0.49 Pa–66.67 k Pa).It also exhibits remarkable mechanical stability during compression and *** sensor is successfully employed in a robotic gripping task to recognize the targets of different materials and shapes based on a multilayer perception(MLP)neural *** opens the door to realizing haptic sensing capabilities for robotic hands and prosthetic limbs.

关键词： Artificial mechanoreceptor Pressure sensor Vertical grapheme Ionic nanofiber Object recognition E-skin

来源：评论

学校读者我要写书评

暂无评论

Suppression of Bulk Traps in Al2o3 Gate Dielectric and its Effect on Threshold Voltage Instability in Al2o3/Algan/Gan Metal-Oxide-Semiconductor High Electron mobility Transistors

SSRN

引用

SSRN 2023年

作者： Deng, Kexin Huang, Sen Wang, Xinhua Jiang, Qimeng Yin, Haibo Fan, Jie Jing, Guanjun Wei, Ke Zheng, Yingkui Shi, Jingyuan Liu, Xinyu High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China University of Chinese Academy of Sciences Beijing100049 China Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China

Bulk trapping and its effects on threshold voltage hysteresis (ΔVTH) in Al2O3/AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) are researched through isothermal capture transient spectroscopy. A post deposition annealing (PDA) at 500 ℃ in the O2 ambient is confirmed to be an effective way to reduce the bulk traps in the atomic layer deposited (ALD)-Al2O3 film as it contributes to the suppressed ΔVTH in Al2O3/AlGaN/GaN MOS-HEMTs. Isothermal-mode capacitance deep level transient spectroscopy (C-DLTS) is utilized to investigate the threshold voltage instability in Al2O3/AlGaN/GaN MOS-HEMTs. The evolution of the C-DLTS signals verifies the continual charging of oxide bulk traps in the Al2O3 gate dielectric once the gate bias of the MOS-HEMTs is applied exceeding +3 V, which leads to the degraded ΔVTH as well as subthreshold slopes in transfer characterization. Such traps probably stem from the Al-O-H component in as-deposited Al2O3 layers, as detected by X-ray photoelectron spectroscopy (XPS) analysis. Energy band simulation further illustrates the capture process of the oxide bulk traps, verifying the physical relationship between bulk-trapping and ΔVTH. © 2023, The Authors. All rights reserved.

关键词： Gallium nitride

来源：评论

学校读者我要写书评

暂无评论

Direct Cu-polyimide Bonding Achieved by Surface Activation and Pt-catalyzed Formic Acid Atmosphere

Direct Cu-polyimide Bonding Achieved by Surface Activation a...

引用

2021 IEEE International Conference on Integrated circuits, Technologies and Applications, ICTA 2021

作者： Meng, Ying Gao, Runhua Wang, Xinhua Chen, Xiaojuan Huang, Sen Wei, Ke Wang, Dahai Mu, Fengwen Liu, Xinyu Chinese Academy of Sciences High-Frequency High-Voltage Device and Integrated Circuits RD Center Institute of Microelectronics Beijing100029 China University of Chinese Academy of Sciences Beijing100049 China Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China

ISBN: (纸本)9781665417471

Recent flexible printed circuit applications of high-frequency wireless communication systems require thicker metal layers on substrates for lower ohmic losses. In this paper, a Cu layer over 50-micron thick was directly generated on the polyimide substrate by heterogeneous bonding method without interlayer. The polyimide was first sputtered a 200 nm-thick Cu layer, and then was activated by oxygen plasma to improve its hydrophilicity and achieve direct adhesion between polyimide and nanoscale Cu deposition, and eventually was bonded with a 50micron-thick Cu foil in a Pt-catalyzed formic acid atmosphere by thermo-compression. The effectiveness of this method was verified by comparing bonding interfaces, shear strength, and fracture modes of bonded samples with and without a Cr interlayer. This method provides a new idea for the integration of heterogeneous materials needed in wearable products and flexible printed circuits. © 2021 IEEE.

关键词： Formic acid

来源：评论

学校读者我要写书评

暂无评论

Nondestructive visualization of graphene on Pt with methylene blue surface modification

引用

Science China Materials 2022年第10期65卷 2763-2770页

作者： He Kang Yanhui Zhang Yun Wu Shike Hu Jing Li Zhiying Chen Yanping Sui Shuang Wang Sunwen Zhao Runhan Xiao Guanghui Yu Songang Peng Zhi Jin Xinyu Liu State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Device InstituteNanjing 210016China Microwave Devices and Integrated Circuits Department Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China

Efficient large-scale nondestructive quality assessment of graphene on Pt is essential to the in-depth growth research and practical applications of ***,we present a very simple method for directly observing the domains and defects in graphene on Pt using an ordinary optical *** was achieved by modifying graphene on Pt using methylene blue(MB).Because the chemical activities of graphene and Pt surface differ significantly,the adsorption and reaction of MB on graphene and platinum surface *** can determine the distribution of graphene crystal domains and defects by comparing the colors in the optical *** addition,this characterization method causes no obvious damage to the Pt substrate and ***,it does not affect the recycling of the substrate or the subsequent characterization or application of *** study provides a nondestructive method for measuring the quality of graphene on Pt on a large scale,as well as a reference for the characterization and doping of other two-dimensional materials.

关键词： graphene Pt nondestructive visualization surface modification methylene blue

来源：评论

学校读者我要写书评

暂无评论

A Low-Jitter and Low-Reference-Spur 320 GHz Signal Source With an 80 GHz Integer-N Phase-Locked Loop Using a Quadrature XOR Technique

A Low-Jitter and Low-Reference-Spur 320 GHz Signal Source Wi...

引用

作者： Liang, Yuan Boon, Chirn Chye Qi, Gengzhen Dziallas, Giannino Kissinger, Dietmar Ng, Herman Jalli Mak, Pui-In Wang, Yong Nanyang Technological University School of Electrical and Electronic Engineering Singapore639798 Singapore Sun Yat-sen University School of Microelectronics Science and Technology Zhuhai519082 China State-Key Laboratory of Analog and Mixed-Signal VLSI Institute of Microelectronics University of Macau China Leibniz Institute for High Performance Microelectronics Frankfurt an der Oder 15236 Germany Institute of Electronic Devices and Circuits Ulm University Ulm89081 Germany Karlsruhe University of Applied Sciences Faculty of Electrical Engineering and Information Technology Karlsruhe76133 Germany University of Electronic Science and Technology of China School of Information and Communication Engineering Chengdu611731 China Nanhu Laboratory Jiaxing314002 China

This article reports a 320-GHz low-jitter and low-reference-spur signal source consisting of an 80-GHz integer- N phase-locked loop (PLL) and a 320-GHz frequency quadrupler. The 80-GHz PLL features a novel dual-path quadrature exclusive-OR (QXOR) technique to cancel the spurs at the reference frequency and its harmonics, enabling low-spur and low-noise phase locking. The proposed phase detector (PD) also enables frequency detection and lock detection (LD), rendering the band-searching to be decoupled from the loop components. Implemented in a 0.13- \mu \text{m} SiGe BiCMOS technology, the proposed signal source shows a -73.1-dBc reference spur, -113.7-dB/Hz phase noise at 1-MHz offset at 40.96 GHz, and -90.3-dB/Hz phase noise at 1-MHz offset at 311.8 GHz. It achieves an integrated jitter of 66.9 fsrms at 40.96 GHz and 122 fsrms (both integrated from 10 kHz to 100 MHz) beyond 300 GHz, with a total division ratio of 512. The LD time is at the microsecond level. The maximum output power is -3.24 dBm, and the power consumption is 372 mW. © 1963-2012 IEEE.

关键词： Phase locked loops

来源：评论

学校读者我要写书评

暂无评论

Investigation of Nb Ox-based volatile switching device with self-rectifying characteristics

引用

Science China(Information Sciences) 2019年第12期62卷 277-280页

作者： Yichen FANG Zongwei WANG Caidie CHENG Zhizhen YU Teng ZHANG Yuchao YANG Yimao CAI Ru HUANG Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of MicroelectronicsPeking University

Dear editor,Resistive random access memory (RRAM), one of the most promising emerging non-volatile memory technologies, has been extensively investigated by researchers from both academia and industry due to its fast ... 详细信息

关键词： Investigation of Nb Ox-based volatile switching device with self-rectifying characteristics

来源：评论

学校读者我要写书评

暂无评论

Uniform, fast, and reliable CMOS compatible resistive switching memory

引用

Journal of Semiconductors 2022年第5期43卷 109-115页

作者： Yunxia Hao Ying Zhang Zuheng Wu Xumeng Zhang Tuo Shi Yongzhou Wang Jiaxue Zhu Rui Wang Yan Wang Qi Liu Key Laboratory of Microelectronic Devices&Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China University of Chinese Academy of Sciences Beijing 100049China School of Integrated Circuits Anhui UniversityHefei 230601China Frontier Institute of Chip and System Fudan UniversityShanghai 200433China

Resistive switching random access memory(RRAM) is considered as one of the potential candidates for next-generation memory. However, obtaining an RRAM device with comprehensively excellent performance, such as high retention and endurance, low variations, as well as CMOS compatibility, etc., is still an open question. In this work, we introduce an insert TaO_(x) layer into HfO_(x)-based RRAM to optimize the device performance. Attributing to robust filament formed in the TaO_(x) layer by a forming operation, the local-field and thermal enhanced effect and interface modulation has been implemented simultaneously. Consequently, the RRAM device features large windows(> 10^(3)), fast switching speed(-10 ns), steady retention(> 72h), high endurance(> 10^(8) cycles), and excellent uniformity of both cycle-to-cycle and device-to-device. These results indicate that inserting the TaO_(x) layer can significantly improve HfO_(x)-based device performance, providing a constructive approach for the practical application of RRAM.

关键词： uniformity resistance switching field enhance layer thermal enhance layer and interface modulation

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：