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IEEE International Symposium on circuits and Systems

作者： Muchan Li Zhongzheng Tian Xuemin Yu Dacheng Yu Zhongyang Ren Liming Ren Yunyi Fu Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of Microelectronics Peking University Beijing P. R. China

In this paper, we propose and implement a single-electron transistor (SET) based on cobalt oxide for the first time. The SETs were fabricated through nanofabrication process compatible with the CMOS technology. A cobalt oxide (Co1-yO) on the surface of the source (S) and drain (D) Co electrodes is utilized to act as a quantum dot (QD). The diameter of QD is calculated to be 2.3 nm. The interface between Co1-yO and Co thin films (S/D electrodes) is used as tunneling junctions. The SET based on CoO exhibits typical single electron transport characteristics. Owing to the high Coulomb blockade energy (～180 meV), the Coulomb blockade regions still remain at room temperature (300 K), revealing the nanometer scale CoO-based SETs have great potential to operate at room temperature.

关键词： Electrodes Temperature Quantum dots Tunneling Cobalt Junctions Single electron transistors

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Nanofabrication beyond optical diffraction limit: Optical driven assembly enabled by superlubricity

arXiv

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arXiv 2024年

作者： Jiang-Tao, Liu Peng, Deli Yang, Qin Liu, Ze Wu, Zhenhua College of Physics and Mechatronic Engineering Guizhou Minzu University Guiyang550025 China Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China Institute of Superlubricity Technology Research Institute of Tsinghua University in Shenzhen Shenzhen518057 China Department of Engineering Mechanics Tsinghua University Beijing100084 China School of Integrated Circuits University of CAS Beijing100049 China

The optical manipulation of nanoparticles on superlubricity surfaces is investigated. The research revealed that, due to the near-zero static friction and extremely low dynamic friction at superlubricity interfaces, the maximum intensity for controlling the optical field can be less than 100 W/cm2, which is nine orders of magnitude lower than controlling nanoparticles on traditional interfaces. The controlled nanoparticle radius can be as small as 5 nm, which is more than one order of magnitude smaller than nanoparticles controlled through traditional optical manipulation. Manipulation can be achieved in sub-microsecond to microsecond timescales. Furthermore, the manipulation takes place on solid surfaces and in non-liquid environments, with minimal impact from Brownian motion. By appropriately increasing dynamic friction, controlling light intensity, or reducing pressure, the effects of Brownian motion can be eliminated, allowing for the construction of microstructures with a size as small as 1/75 of the wavelength of light. This enables the control of super-resolution optical microstructures. The optical super-resolution manipulation of nanoparticles on superlubricity surfaces will find important applications in fields such as nanofabrication, photolithography, optical metasurface, and biochemical analysis. © 2024, CC BY.

关键词： Nanoparticles

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Vertical‐organic‐nanocrystal‐arrays for crossbar memristors with tuning switching dynamics toward neuromorphic computing

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SmartMat 2021年第1期2卷 99-108页

作者： Fangxu Yang Lingjie Sun Qingxi Duan Huanli Dong Zhaokun Jing Yuchao Yang Rongjin Li Xiaotao Zhang Wenping Hu Leon Chua Key Laboratory of Molecular Optoelectronic Sciences School of ScienceTianjin UniversityTianjinChina Beijing National Research Center for Molecular Sciences Chinese Academy of SciencesBeijingChina Joint School of National University of Singapore and Tianjin University International Campus of Tianjin UniversityBinhai New CityFuzhouChina Key Laboratory of Microelectronic Devices and Circuits(MOE) Institute of MicroelectronicsPeking UniversityBeijingChina Department of Electrical Engineering and Computer Sciences University of CaliforniaBerkeleyCaliforniaUSA

Memristors proposed by Leon Chua provide a new type of memory device for novel neuromorphic computing ***,the approaching of distinct multi‐intermediate states for tunable switching dynamics,the con-trolling of conducting filaments(CFs)toward high device repeatability and reproducibility,and the ability for large‐scale preparation devices,remain full of ***,we show that vertical‐organic‐nanocrystal‐arrays(VONAs)could make a way toward the *** perfect one‐dimensional structure of the VONAs could confine the CFs accurately with fine‐tune resistance states in a broad range of 103 *** availability of large‐area VONAs makes the fabrication of large‐area crossbar memristor arrays facilely,and the analog switching characteristic of the memristors is to effectively imitate different kinds of synaptic plasticity,indicating their great potential in future applications.

关键词： conducting filament memristor organic electronics organic single crystal

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A Readout Circuit with Current-Compensation-Based Extended-Counting ADC for 1024×768 Diode Uncooled Infrared Imagers

A Readout Circuit with Current-Compensation-Based Extended-C...

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IEEE International Symposium on circuits and Systems (ISCAS)

作者： Shanzhe Yu Xueyou Shi Yacong Zhang Guangyi Chen Siyuan Ye Wengao Lu Zhongjian Chen Key Laboratory of Microelectronic Devices and Circuits Department of Microelectronics Peking University China Peking University Information Technology Institute (Tianjin Binhai) China

This paper presents a low-power readout circuit with 14-bit column-level extended-counting ADC for 17μm-pitch 1024 × 768 silicon diode uncooled infrared imagers. The ADC's coarse conversion adopts a current-mode DAC to feedback charge into a CTIA-based integrator during integration and the fine conversion is implemented by a SAR ADC after integration. A current self-compensator and a modified DAC are proposed to reduce more than 50% power of the overall integrator compared with conventional structure. The 1024 × 768 readout circuit has been fabricated in the 0.18 μm 1P5M CMOS process. Power consumption of the readout circuit is 104mW and each column ADC only consumes 15μW. Simulation results show that the RMS noise of the readout circuit is 0.9LSB and nonlinearity is 0.06% at 30fps.

关键词： Power demand circuits and systems Simulation Linearity CMOS process Silicon

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Breakdown voltage enhancement in GaN channel and AlGaN channel HEMTs using large gate metal height

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Chinese Physics B 2020年第2期29卷 420-424页

作者： Zhong-Xu Wang Lin Du Jun-Wei Liu Ying Wang Yun Jiang Si-Wei Ji Shi-Wei Dong Wei-Wei Chen Xiao-Hong Tan Jin-Long Li Xiao-Jun Li Sheng-Lei Zhao Jin-Cheng Zhang Yue Hao Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices School of MicroelectronicsXidian UniversityXi'an 710071China Shanghai Precision Metrology and Testing Research Institute Shanghai 201109China China Academy of Space Technology(Xi'an) Xi'an 710000China Sichuan Institute of Solid-State Circuits CETCChongqing 400060China

A large gate metal height technique is proposed to enhance breakdown voltage in GaN channel and AlGaN channel high-electron-mobility-transistors(HEMTs).For GaN channel HEMTs with gate-drain spacing LGD=2.5μm,the breakdown voltage VBR increases from 518 V to 582 V by increasing gate metal height h from 0.2μm to 0.4μ*** GaN channel HEMTs with LGD=7μm,VBR increases from 953 V to 1310 V by increasing h from 0.8μm to 1.6μ*** breakdown voltage enhancement results from the increase of the gate sidewall capacitance and depletion region *** Al0.4Ga0.6N channel HEMT with LGD=7μm,VBR increases from 1535 V to 1763 V by increasing h from 0.8μm to 1.6μm,resulting in a high average breakdown electric field of 2.51 MV/*** and analysis indicate that the high gate metal height is an effective method to enhance breakdown voltage in GaN-based HEMTs,and this method can be utilized in all the lateral semiconductor devices.

关键词： GaN channel HEMTs AlGaN channel HEMTs breakdown voltage gate metal height

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Reversible and Irreversible Polarization Degradation of Hf0.5Zr0.5O2 Capacitors with Coherent Structural Transition at Elevated Temperatures

Reversible and Irreversible Polarization Degradation of Hf0....

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Annual International Symposium on Reliability Physics

作者： Zhaomeng Gao Tianjiao Xin Cheng Liu Yilin Xu Yiwei Wang Yunzhe Zheng Rui Wang Xiaotian Li Yonghui Zheng Kai Du Diqing Su Zhaohao Zhang Huaxiang Yin Weifeng Zhang Chao Li Xiaoling Lin Haitao Jiang Sannian Song Zhitang Song Yan Cheng Hangbing Lyu Key Laboratory of Polar Materials and Devices (MOE) East China Normal University Shanghai China Hualu Technologies Co. Shanghai China National Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information Technology (CAS) Shanghai China Huawei Technologies Co. Shenzhen China Institute of Microelectronics (CAS) Beijing China Key Laboratory of Photovoltaic Materials of Henan Province Henan University Kaifeng China China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China East China Normal University Lingang Research Institute Shanghai China

ISBN: (数字)9798350369762

ISBN: (纸本)9798350369779

In this study, we investigated the reversible and irreversible polarization degradation of hafnia-based ferroelectric capacitors (FeCAPs) using the state-of-the-art spherical aberration corrected transmission electron microscope (Cs-TEM) with realtime temperature changes. The key observations are as follows: (1) Rapid thermal annealing (RTA) results in incomplete formation of the orthorhombic (o-) phase in the ferroelectric (FE) material, leading to a coherent phase boundary (CPB) between o- and tetragonal (t-) structures. (2) The movement of the o-/t-CPB with temperature corresponds to reversible changes in polarization of hafnia-based FeCAPs. (3) Irreversible degradation in polarization occurs due to migration of the o-/monoclinic (m-) CPB with temperature. These findings provide a new perspective for evaluating the stability of the o-phase in fluorite-type FE materials and offer guidance for optimizing their properties through regulation strategies.

关键词： Degradation Temperature Transmission electron microscopy Microscopy Capacitors Iron Regulation

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A Reconfigurable Mixed Signal CMOS Design for Multiple STDP Learning Rules

A Reconfigurable Mixed Signal CMOS Design for Multiple STDP ...

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International Conference on Electronics Technology (ICET)

作者： Chongyang Huan Yuan Wang Xiaoxin Cui Xing Zhang Key Laboratory of Microelectronics Devices and Circuits (MoE) Institute of Microelectronics Peking University Peking China

ISBN: (数字)9781728162836

ISBN: (纸本)9781728162843

Spike-timing-dependent-plasticity (STDP) is the learning algorithm for spiking neural network (SNN), which promises to obtain deeper understanding of biological neural system and more powerful artificial intelligence. However, most implementations for STDP learning rules have shortcomings in reconfigurability and richness. In this paper, a reconfigurable mixed-signal neuromorphic circuit for multiple STDP learning rules is proposed. Adopting phenomenological models, the design is easy to implement. Under a 65nm CMOS technology, simulation results show that the energy consumption for a weight update option is about 1~50 fJ/spike. The proposed circuit is suitable for neuromorphic applications using various STDP rules.

关键词： operational transconductance amplifier (OTA) neuromorphic engineering spike timing dependent plasticity (STDP) reconfigurability Neuromorphic engineering learning algorithms configurability Neuromorphics Learning energy consumption Rule

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Quantum transport quality of a processed undoped Ge/SiGe heterostructure

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Physical Review B 2023年第4期108卷 045303-045303页

作者： Yi-Xin Li Zhenzhen Kong Shimin Hou Guilei Wang Shaoyun Huang Beijing Key Laboratory of Quantum Devices Key Laboratory for the Physics and Chemistry of Nanodevices Peking University Beijing 100871 People's Republic of China Integrated Circuit Advanced Process R&D Center Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 People's Republic of China School of Integrated Circuits University of Chinese Academy of Sciences Beijing 100049 People's Republic of China Hefei National Laboratory Hefei 230088 People's Republic of China and Beijing Superstring Academy of Memory Technology Beijing 100176 People's Republic of China

A degraded mobility of 5.2×105cm2V−1s−1 but a long quantum scattering time of 2.3 ps at the hole density of 2.25×1011cm−2 were obtained from a two-dimensional hole gas in a processed undoped Ge/SiGe heterostructure Hall-bar field-effect device. The heterostructure was grown by the reduced pressure chemical vapor deposition method and the device fabrications were compatible with well-established semiconductor technology. The percolation density of 0.69×1011cm−2 indicated a very low disorder potential landscape experienced by holes in the strained Ge quantum well. In addition to integer quantum Hall effects (IQHEs) of consecutive filling factors from ν=8 down to 1, we also observed the quantum states at filling factors between ν=1 and 2, and between ν=2 and 3 at 1.71 K. The observation of quantum Hall effects at the inferior mobility confirmed the mobility/quality dichotomy in the ultraclean undoped Ge/SiGe heterostructure. The study explicitly indicated that the device fabrication process likely compromised the transport mobility, whereas the quantum quality was less influenced, and established the heterostructure as an ideal platform for quantum device implementations.

关键词： Electrical properties Fractional quantum Hall effect Quantum Hall effect Quantum wells Two-dimensional electron system Epitaxy Hall bar Methods in transport Shubnikov-de Haas effect

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2.4-GHz 16-QAM Passive Backscatter Transmitter for Wireless Self-Power Chips in IoT

2.4-GHz 16-QAM Passive Backscatter Transmitter for Wireless ...

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IEEE International Symposium on circuits and Systems (ISCAS)

作者： Enbin Gong Hao Zhang Xiaolong Chen Le Ye Ru Huang Key Laboratory of Microelectronics Devices and Circuits (MOE) Institute of Microelectronics Peking University Beijing 100871 China

ISBN: (数字)9781728133201

ISBN: (纸本)9781728133218

A 2.4-GHz 16-QAM ultra-low-power passive transmitter for wireless self-power chips in IoT is proposed. To expand wireless sensor networks, it achieves energy harvest and low-power wireless communication with 2.4-GHz infrastructure. Besides, the backscatter technique is employed to reduce power consumption and is compatible with multiple quadrature amplitude modulation (M-QAM) to increase data rate. Measured results show that the transmitter just dissipates 1 μW from 1.8-V supply voltage with 6.46% EVM at 4-Mb/s data rate. Moreover, the transmitter has great availability whether at 100 Mb/s data rate or for the input power of a wide dynamic range. The chip is fabricated in the 0.18-μm 1P6M standard CMOS process and occupies a silicon area of 1465 × 915 μm 2 without pads.

关键词： Backscatter Power demand Wireless sensor networks Wireless communication Radio frequency Capacitors Quadrature amplitude modulation

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Radiation-hardened property of single-walled carbon nanotube film-based field-effect transistors under low-energy proton irradiation

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Journal of Semiconductors 2021年第11期42卷 18-25页

作者： Xiaorui Zhang Huiping Zhu Song’ang Peng Guodong Xiong Chaoyi Zhu Xinnan Huang Shurui Cao Junjun Zhang Yunpeng Yan Yao Yao Dayong Zhang Jingyuan Shi Lei Wang Bo Li Zhi Jin High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China Key Laboratory of Science and Technology on Silicon Devices Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China University of Chinese Academy of Sciences Beijing 100049China Department of Chemistry City University of Hong KongHong Kong 999077China

Strong C-C bonds,nanoscale cross-section and low atomic number make single-walled carbon nanotubes(SWCNTs)a potential candidate material for integrated circuits(ICs)applied in outer ***,very little work combines the simulation calculations with the electrical measurements of SWCNT field-effect transistors(FETs),which limits further understanding on the mechanisms of radiation ***,SWCNT film-based FETs were fabricated to explore the total ionizing dose(TID)and displacement damage effect on the electrical performance under low-energy proton irradiation with different fluences up to 1×1015 p/*** negative shift of the threshold voltage and obvious decrease of the on-state current verified the TID effect caused in the oxide *** stability of the subthreshold swing and the off-state current reveals that the displacement damage caused in the CNT layer is not serious,which proves that the CNT film is ***,according to the simulation,we found the displacement damage caused by protons is different in the source/drain contact area and channel area,leading to varying degrees of change for the contact resistance and sheet *** analyzed the simulation results and electrical measurements,we explained the low-energy proton irradiation mechanism of the CNT FETs,which is essential for the construction of radiation-hardened CNT film-based ICs for aircrafts.

关键词： SWCNT FETs low-energy proton irradiation radiation effects electrical performance TID effect displacement damage effect simulation

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