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arXiv 2022年

作者： Yuan, Jun-Hui Mao, Ge-Qi Xue, Kan-Hao Bai, Na Wang, Chengxu Cheng, Yan Lyu, Hangbing Sun, Huajun Wang, Xingsheng Miao, Xiangshui School of Integrated Circuits School of Optical and Electronic Information Huazhong University of Science and Technology Wuhan430074 China Hubei Yangtze Memory Laboratories Wuhan430205 China Department of Electronics East China Normal University Shanghai200241 China Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China

Ferroelectricity observed in thin film HfO2, either doped with Si, Al, etc. or in the Hf0.5Zr0.5O2 form, has gained great technical significance. However, the soft mode theory faces a difficulty in explaining the origin of such ferroelectricity. In this work, we propose that the 7 cation coordination number of HfO2/ZrO2 lies at the heart of this ferroelectricity, which stems from the proper ionic radii of Hf/Zr compared with O. Among the numerous compounds with non-centrosymmetric nature, e.g., mm2 point group, HfO2 and ZrO2 are special in that they are close to the border of 7 and 8 cation coordination, such that the 8-coordination tetragonal intermediate phase could greatly reduce the switching barrier. Other 7-coordination candidates, including SrI2, TaON, YSBr and YOF are also studied in comparison to HfO2/ZrO2, and six switching paths are analyzed in detail for the Pca21 phase. A rule of preferred switching path in terms of ionic radii ratio and coordination number has been established. We also show the possible route from ferroelectric Pca21 phase to monoclinic P21/c phase in HfO2, which is relevant to the fatigue phenomenon. Copyright © 2022, The Authors. All rights reserved.

关键词： Ferroelectricity

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Efficient thermal dissipation in wafer-scale heterogeneous integration of single-crystalline𝛽β-Ga_(2)O_(3)thin film on SiC

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Fundamental Research 2021年第6期1卷 691-696页

作者： Wenhui Xu Tiangui You Yibo Wang Zhenghao Shen Kang Liu Lianghui Zhang Huarui Sun Ruijie Qian Zhenghua An Fengwen Mu Tadatomo Suga Genquan Han Xin Ou Yue Hao Xi Wang State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology School of MicroelectronicsXidian UniversityXi’an 710071China School of Science and Ministry of Industry and Information Technology Key Laboratory of Micro-Nano Optoelectronic Information System Harbin Institute of TechnologyShenzhen 518055China Department of Physics State Key Laboratory of Surface PhysicsInstitute of Nanoelectronic Devices and Quantum ComputingFudan UniversityShanghai 200433China High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China Collaborative Research Center Meisei UniversityHinoJapan Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China

The semiconductor,β-Ga_(2)O_(3)is attractive for applications in high power electronic devices with low conduction loss due to its ultra-wide bandgap(∼4.9 eV)and large Baliga’s figure of ***,the thermal conductivity of𝛽β-Ga_(2)O_(3)is much lower than that of other wide/ultra-wide bandgap semiconductors,such as SiC and GaN,which results in the deterioration of𝛽β-Ga_(2)O_(3)-based device performance and reliability due to *** overcome this problem,a scalable thermal management strategy was proposed by heterogeneously integrating wafer-scale single-crystalline𝛽β-Ga_(2)O_(3)thin films on a highly thermally conductive SiC *** of the transferred𝛽β-Ga_(2)O_(3)thin film indicated a uniform thickness to within±2.01%,a smooth surface with a roughness of 0.2 nm,and good crystalline quality with an X-ray rocking curves(XRC)full width at half maximum of 80 *** thermoreflectance measurements were employed to investigate the thermal *** thermal performance of the fabricated𝛽β-Ga_(2)O_(3)/SiC heterostructure was effectively improved in comparison with that of the𝛽β-Ga_(2)O_(3)bulk wafer,and the effective thermal boundary resistance could be further reduced to 7.5 m 2 K/GW by a post-annealing *** barrier diodes(SBDs)were fabricated on both a𝛽β-Ga_(2)O_(3)/SiC heterostructured material and a𝛽β-Ga_(2)O_(3)bulk *** thermal imaging revealed the temperature increase of the SBDs on𝛽β-Ga_(2)O_(3)/SiC to be one quarter that on the𝛽β-Ga_(2)O_(3)bulk wafer with the same applied power,which suggests that the combination of the𝛽-Ga_(2)O_(3)thin film and SiC substrate with high thermal conductivity promotes heat dissipation in𝛽β-Ga_(2)O_(3)-based devices.

关键词： Thermal management Heterogeneous integration Wafer scale𝛽β-Ga_(2)O_(3)on SiC Ion-cutting technique Schottky barrier diodes(SBDs) Transient thermoreflectance(TTR) measurements

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Rectangular suspended single crystal Si nanowire with (001) planes and <001> direction developed via TMAH wet chemical etching

Rectangular suspended single crystal Si nanowire with (001) ...

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China Semiconductor Technology International Conference (CSTIC)

作者： Shuang Sun Baotong Zhang Yuancheng Yang Xia An Xiaoyan Xu Ru Huang Ming Li Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing China

ISBN: (数字)9781728165585

ISBN: (纸本)9781728165592

In this study, a kind of rectangular suspended single crystal Si nanowire with (001) planes and along direction is developed via a CMOS-compatible top-down scheme. In this scheme, the nanowires are formed by anisotropic etching of TMAH on different silicon crystallography orientations. By designing the initial orientations of hard mask patterns, the rectangular suspended silicon nanowires can be successfully fabricated without any sacrificial epitaxial layers. Due to the damage-free process and the high mobility on (001) planes, this scheme will provide a high-quality channel for the future gate-alI-around silicon transistor technology.

关键词： Epitaxial layers Logic gates Silicon Etching Transistors Crystallography Chemicals

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Emerging Internet of Things driven carbon nanotubes-based devices

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Nano Research 2022年第5期15卷 4613-4637页

作者： Shu Zhang Jinbo Pang Yufen Li Feng Yang Thomas Gemming Kai Wang Xiao Wang Songang Peng Xiaoyan Liu Bin Chang Hong Liu Weijia Zhou Gianaurelio Cuniberti Mark HRümmeli Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong Institute for Advanced Interdisciplinary Research(iAIR)University of JinanJinan 250022China Department of Chemistry Guangdong Provincial Key Laboratory of CatalysisSouthern University of Science and TechnologyShenzhen 518055China Leibniz Institute for Solid State and Materials Research Dresden P.O.Box 270116Dresden D-01171Germany State Key Laboratory of Crystal Materials Center of Bio&Micro/Nano Functional MaterialsShandong University27 Shandanan RoadJinan 250100China School of Electrical Engineering Qingdao UniversityQingdao 266071China Shenzhen Institutes of Advanced Technology Chinese Academy of Sciences 1068 Xueyuan AvenueShenzhen University TownShenzhen 518055China High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China Key Laboratory of Microelectronic Devices&Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China School of Chemistry and Chemical Engineering University of JinanJinan 250022China College of Energy Soochow Institute for Energy and Materials InnovationsSoochow UniversitySuzhou 215006China Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province Soochow UniversitySuzhou 215006China Centre of Polymer and Carbon Materials Polish Academy of SciencesM.Curie Sklodowskiej 34Zabrze 41-819Poland Institute of Environmental Technology(CEET) VSB-Technical University of Ostrava17.Listopadu 15Ostrava 70833Czech Republic Dresden Center for Computational Materials Science Technische Universität DresdenDresden 01062Germany Dresden Center for Intelligent Materials(GCL DCIM) Technische Universität DresdenDresden 01062Germany Institute for Materials Science and Max Bergmann Center of Biomaterials Technische Universität DresdenDresden 01069Germany Center for Advancing Electronics D

Carbon nanotubes(CNTs)have attracted great attentions in the field of electronics,sensors,healthcare,and energy *** emerging applications have driven the carbon nanotube research in a rapid ***,the structure control over CNTs has inspired an intensive research vortex due to the high promises in electronic and optical device ***,this in-depth review is anticipated to provide insights into the controllable synthesis and applications of high-quality ***,the general synthesis and post-purification of CNTs are briefly ***,the state-of-the-art electronic device applications are discussed,including field-effect transistors,gas sensors,DNA biosensors,and pressure ***,the optical sensors are delivered based on the *** addition,energy applications of CNTs are discussed such as thermoelectric energy ***,future opportunities are proposed for the Internet of Things(IoT)oriented sensors,data processing,and artificial intelligence.

关键词： carbon nanotubes electronics sensors electronic skins Internet of Things artificial intelligence

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Geometric Variability Aware Quantum Potential based Quasi-ballistic Compact Model for Stacked 6 nm-Thick Silicon Nanosheet GAA-FETs

Geometric Variability Aware Quantum Potential based Quasi-ba...

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International Electron devices Meeting (IEDM)

作者： Shijie Huang Zhenghua Wu Haoqing Xu Jingrui Guo Lihua Xu XinLv Duan Qian Chen Guanhua Yang Qingzhu Zhang Huaxiang Yin Lingfei Wang Ling Li Ming Liu Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics of the Chinese Academy of Sciences Beijing China University of Chinese Academy of Sciences Beijing China Advanced Integrated Circuits R&D Center Institute of Microelectronic of the Chinese Academy of Sciences Beijing China

Quantum-corrected quasi-ballistic compact model is developed for Stacked Silicon Nanosheet (SiNS) Gate-all-around (GAA) FETs. Theories of Density-Gradient-Poisson (DG-P), Singular perturbation and quasi-ballistic to interpret quantum mechanicals on density profile and charge transport are employed in analytical expressions of current, terminal charge and trans-capacitance. Besides, the model incorporates ultra-scaling induced subthreshold degradation and is rigidly verified by comparing to 6-nm-thick-SiNS based experiments (of both ${P-}$ and $N$ -GAAFET) and GTS simulations (of down to 15 nm channel length). Instead of classical Schrodinger-Poisson theory, it holds features of computation-efficiency and SPICE-compatibility. Especially, awareness of geometric variability enables performance and reliability assessments that statistical effects of stacked nanosheets on on-state voltage are predicted. Hence, this high-efficient quantum corrected model is promising in designing integrated circuits and developing a geometry aware design-technology co-optimization flow in the next generation technology node.

关键词： Electric potential Simulation Field effect transistors Gallium arsenide Logic gates Mathematical models Silicon

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Origin of Steep Subthreshold Swing Within the Low Drain Current Range in Negative Capacitance Field Effect Transistor

Origin of Steep Subthreshold Swing Within the Low Drain Curr...

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China Semiconductor Technology International Conference (CSTIC)

作者： Chang Su Qianqian Huang Mengxuan Yang Liang Chen Zhongxin Liang Ru Huang Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of Microelectronics Peking University Beijing CHINA

ISBN: (数字)9781728165585

ISBN: (纸本)9781728165592

Negative capacitance FET (NCFET) can achieve the steeper subthreshold swing (SS) than conventional MOSFET for the reduction of supply voltage V DD , while many experimental results indicate that NCFETs show the steeper SS only within a limited drain current range. In this work, the physical origin and parameter impacts of drain current range corresponding to steeper SS in NCFET are investigated, based on the modeling of domain switching dynamics of ferroelectric (FE). It is found that the larger remnant polarization is beneficial for the steeper SS with the larger drain current range. Besides, simulation results indicate that only within the limited window of sweeping rate and FE switching time, the drain current range can be enlarged for the steeper switching in NCFET.

关键词： MOSFET Simulation Switches Capacitance Iron Hafnium compounds Switching circuits

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Device Modeling and Application Simulation of Ferroelectric-FETS with Dynamic Multi-Domain Behavior

Device Modeling and Application Simulation of Ferroelectric-...

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China Semiconductor Technology International Conference (CSTIC)

作者： Zhiyuan Fu Cheng Chen Jin Luo Qianqian Huang Ru Huang Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of Microelectronics Peking University Beijing CHINA

ISBN: (数字)9781728165585

ISBN: (纸本)9781728165592

In this work, a ferroelectric-FET (FeFET) model based on multi-domain Preisach theory is developed. Instead of the single-domain Landau-Khalatnikvo (L-K) and tanh based model, the Preisach model with dynamic module is established to accurately model the dynamic behavior of multi-domain FeFET. Moreover, a FeFET-based neuron structure is presented and simulated based on the developed device model, showing the promising potential of FeFET for neuromorphic computing.

关键词： Semiconductor device modeling Neuromorphic engineering Computational modeling Neurons

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Physical Insights into the Impact of Internal Metal Gate on the Subthreshold Behavior of NCFET Based on Domain Switching Dynamics

Physical Insights into the Impact of Internal Metal Gate on ...

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International Conference on Solid-State and Integrated Circuit Technology

作者： Tianyue Fu Qianqian Huang Liang Chen Chang Su Ru Huang Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of Microelectronics Peking University Beijing China

ISBN: (数字)9781728162355

ISBN: (纸本)9781728162362

In this work, the influences of the internal metal of gate stack in Negative Capacitance FET (NCFET) are clarified based on domain switching dynamics physically. By analyzing the equivalent ferroelectric (FE)/dielectric (DE) series capacitor, a new method is proposed to study the domain switching process for metal-ferroelectric-insulator-metal (MFIM) structure. Our results illustrate that NC effect of FE/DE series capacitor is closely related to the switching capabilities of FE layer, embodied by the distribution of switching activation field Ea of domains, which also provide the design direction of FE layer for the subthreshold swing optimization of NCFET.

关键词： Switches Iron Logic gates Capacitors Periodic structures Optimization Electric potential

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Implementation of Lateral Divisive Inhibition Based on Ferroelectric Fet with Ultra-Low Hardware Cost for Neuromorphic Computing

Implementation of Lateral Divisive Inhibition Based on Ferro...

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China Semiconductor Technology International Conference (CSTIC)

作者： Shuhan Liu Tianyi Liu Zhiyuan Fu Cheng Chen Qianqian Huang Ru Huang Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of Microelectronics Peking University Beijing China

ISBN: (数字)9781728165585

ISBN: (纸本)9781728165592

In this work, a novel bio-inspired hardware design of lateral divisive inhibition is proposed and demonstrated by using only one transistor of ferroelectric FET. The proposed design is simulated based on our developed FeFET model, and is also proved to be functional in spiking neural network. The new design with ultra-low hardware cost exhibits good biological plausibility, showing its great potential for neuromorphic computing.

关键词： Neuromorphic engineering Computational modeling Biological system modeling Neural networks Hardware Transistors Task analysis

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Efficient and accurate neural field reconstruction using resistive memory

arXiv

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arXiv 2024年

作者： Yu, Yifei Wang, Shaocong Zhang, Woyu Zhang, Xinyuan Wu, Xiuzhe He, Yangu Yang, Jichang Zhang, Yue Lin, Ning Wang, Bo Chen, Xi Wang, Songqi Zhang, Xumeng Qi, Xiaojuan Wang, Zhongrui Shang, Dashan Liu, Qi Cheng, Kwang-Ting Liu, Ming Department of Electrical and Electronic Engineering The University of Hong Kong Hong Kong Hong Kong ACCESS – AI Chip Center for Emerging Smart Systems InnoHK Centers Hong Kong Science Park Hong Kong Hong Kong Institute of Mind The University of Hong Kong Hong Kong Hong Kong Key Lab of Fabrication Technologies for Integrated Circuits Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China University of Chinese Academy of Sciences Beijing100049 China Frontier Institute of Chip and System Fudan University Shanghai200433 China Department of Electronic and Computer Engineering The Hong Kong University of Science and Technology Hong Kong Hong Kong

Human beings construct perception of space by integrating sparse observations into massively interconnected synapses and neurons, offering a superior parallelism and efficiency. Replicating this capability in AI finds wide applications in medical imaging, AR/VR, and embodied AI, where input data is often sparse and computing resources are limited. However, traditional signal reconstruction methods on digital computers face both software and hardware challenges. On the software front, difficulties arise from storage inefficiencies in conventional explicit signal representation. Hardware obstacles include the von Neumann bottleneck, which limits data transfer between the CPU and memory, and the limitations of CMOS circuits in supporting parallel processing. We propose a systematic approach with software-hardware co-optimizations for signal reconstruction from sparse inputs. Software-wise, we employ neural field to implicitly represent signals via neural networks, which is further compressed using low-rank decomposition and structured pruning. Hardware-wise, we design a resistive memory-based computing-in-memory (CIM) platform, featuring a Gaussian Encoder (GE) and an MLP Processing Engine (PE). The GE harnesses the intrinsic stochasticity of resistive memory for efficient input encoding, while the PE achieves precise weight mapping through a Hardware-Aware Quantization (HAQ) circuit. We demonstrate the system’s efficacy on a 40nm 256Kb resistive memory-based in-memory computing macro, achieving 31.5×, 35.5×, and 47.2× energy efficiency improvements and 10.8×, 38.8×, and 6.2× parallelism improvements without compromising reconstruction quality in tasks like 3D CT sparse reconstruction, novel view synthesis, and novel view synthesis for dynamic scenes. This work advances the AI-driven signal restoration technology and paves the way for future efficient and robust medical AI and 3D vision applications. Copyright © 2024, The Authors. All rights reserved.

关键词： Signal reconstruction

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