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Science Bulletin 2024年第14期69卷 2221-2230页

作者：杨静李志斌伍莹沈勇张明陈彬袁国江肖松华冯建松张旭唐毓蔚丁孙安陈晓龙王太宏 Department of Electrical and Electronic Engineering Southern University of Science and TechnologyShenzhen 518055China School of Microelectronics Southern University of Science and TechnologyShenzhen 518055China Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education Engineering Research Center of Advanced Semiconductor Technology and Application of Ministry of EducationChangsha Semiconductor Technology and Application Innovation Research InstituteCollege of Semiconductors(College of Integrated Circuits)Hunan UniversityChangsha 410082China School of Environmental and Chemical Engineering Yanshan UniversityQinhuangdao 066004China School of Integrated Circuits Nanjing UniversitySuzhou 215163China

Flexible pressure sensors with high sensitivity and linearity are highly desirable for robot sensing and human physiological signal ***,the current strategies for stabilizing axial microstructures(e.g.,micro-pyramids)are mainly susceptible to structural stiffening during compression,thereby limiting the realization of high sensitivity and ***,we report a bending-induced nonequilibrium compression process that effectively enhances the compressibility of microstructures,thereby crucially improving the efficiency of interfacial area growth of electric double layer(EDL).Based on this principle,we fabricate an iontronic flexible pressure sensor with vertical graphene(VG)array ***-high sensitivity(185.09 kPa^(-1))and linearity(R^(2)=0.9999)are realized over a wide pressure range(0.49 Pa–66.67 k Pa).It also exhibits remarkable mechanical stability during compression and *** sensor is successfully employed in a robotic gripping task to recognize the targets of different materials and shapes based on a multilayer perception(MLP)neural *** opens the door to realizing haptic sensing capabilities for robotic hands and prosthetic limbs.

关键词： Artificial mechanoreceptor Pressure sensor Vertical grapheme Ionic nanofiber Object recognition E-skin

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Associative learning circuit based on synaptic transistors with temporal dynamics

Associative learning circuit based on synaptic transistors w...

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IEEE Electron devices Technology and Manufacturing Conference (EDTM)

作者： Chang Liu Zhaokun Jing Yuchao Yang Ru Huang Key Laboratory of Microelectronic Devices and Circuits (MOE) Peking University Beijing China

ISBN: (纸本)9781728181769;9781728181776

Neuromorphic computing holds great potential for future artificial general intelligence, which requires device elements that can mimic the functionalities of biological units. Here, an ion gated synaptic transistor based on Mos₂ is demonstrated, which produces a diversity of short-term plasticity that is an enabling factor for efficient temporal information processing. A circuit based on such synaptic transistors is constructed to implement Pavlov's associative learning behavior, demonstrating the potential of the devices in brain inspired computing.

关键词： Neuromorphic engineering Information processing Logic gates Ions Hardware Biology Manufacturing

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A Novel Multiple Modes Resonant Sensor Featuring Blue Sideband Excitation

A Novel Multiple Modes Resonant Sensor Featuring Blue Sideba...

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IEEE International Conference on Micro Electro Mechanical Systems

作者： Jiao Xu Zhuoyue Zheng Jingqian Xi Ziqian Zhang Huafeng Liu Pan Zhang Jianlin Chen Chen Wang Michael Kraft Yuan Wang R. P. Martins Pui-In Mak MOE Key Laboratory of Fundamental Physical Quantities Measurement PGMF and School of Physics Huazhong University of Science and Technology Wuhan P. R. China Institute of Microelectronics State Key Laboratory of Analog and Mixed-Signal VLSI University of Macau Macau China National Key Laboratory of Advanced Micro and Nano Manufacture Technology School of Integrated Circuits Peking University China School of Microelectronics Shanghai University China Department of Electrical Engineering-MNS KU Leuven Leuven Belgium

ISBN: (数字)9798331508890

ISBN: (纸本)9798331508906

This paper reports a novel MEMS resonant structure functioning as a baseline resonant electrostatic force/temperature sensor, highlighting its substantial potential in sensing applications. The resonator, characterized by a dual-cosine structure, is capable of simultaneous multiple resonant modes actuation within the 300 kHz range, through a sole-source drive approach using the recent emerging Blue Sideband Excitation (BSE) technique. This method enables a distinctive multi-modal response, essential for multi-parameter measurements. The research focuses on the sensor’s temperature characteristics, electrostatic perturbation sensitivity, and noise floor. Notably, the study reveals intriguing temperature responses across different modes, where certain modes exhibit a significant frequency rise with increasing temperature, this is counter-intuitive with common MEMS resonator devices, prompting further investigation into the underlying mechanisms. The analysis of electrostatic perturbation sensitivity and noise background further unfolds the resonator’s performance under various excitation conditions, laying a foundation for advancing sensor functionality, and providing solid evidence on the viability of the subject. To sum up, this study highlights the resonator’s potential as a high-precision sensor, opening new opportunities for MEMS sensor design and multi-parameter measurement applications.

关键词： Temperature measurement Micromechanical devices Temperature sensors Electric potential Temperature Sensitivity Perturbation methods Noise Sensors Electrostatics

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Rectangular suspended single crystal Si nanowire with (001) planes and direction developed via TMAH wet chemical etching

Rectangular suspended single crystal Si nanowire with (001) ...

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2020 China Semiconductor Technology International Conference, CSTIC 2020

作者： Sun, Shuang Zhang, Baotong Yang, Yuancheng An, Xia Xu, Xiaoyan Huang, Ru Li, Ming Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing100871 China

ISBN: (纸本)9781728165585

In this study, a kind of rectangular suspended single crystal Si nanowire with (001) planes and along direction is developed via a CMOS-compatible top-down scheme. In this scheme, the nanowires are formed by anisotropic etching of TMAH on different silicon crystallography orientations. By designing the initial orientations of hard mask patterns, the rectangular suspended silicon nanowires can be successfully fabricated without any sacrificial epitaxial layers. Due to the damage-free process and the high mobility on (001) planes, this scheme will provide a high-quality channel for the future gate-alI-around silicon transistor technology. © 2020 IEEE.

关键词： Nanowires

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Investigation of the Degradation Mechanism of β-Ga2O3 SBD on 5 MeV Proton Irradiation

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IEEE Transactions on Electron devices 2025年第7期72卷 3509-3515页

作者： Wenzhang Du Yuangang Wang Yukai Huang Junyan Zhu Junfeng Yu Xiaodong Yang Haonan Liu Xinbo Zou Hongping Ma Qingchun Zhang Liang Li Debin Zhang Yiwu Qiu Xinjie Zhou Tao Wang Zhihong Feng Wei Huang D. W. Zhang State Key Laboratory of ASIC and System Shanghai Institute of Intelligent Electronics and Systems College of Integrated Circuits and Micro-Nano Electronics Fudan University Shanghai China National Key Laboratory of Solid-State Microwave Devices and Circuits Shijiazhuang China School of Information Science and Technology (SIST) ShanghaiTech University Shanghai China School of Academy for Engineering and Technology Fudan University Shanghai China School of Electronic Information Engineering Suzhou Vocational University Suzhou China Shanghai Institute of Space Power-Sources Shanghai China Wuxi Microelectronics Scientific and Research Center Wuxi China School of Integrated Circuits Jiangnan University Wuxi China

The effects of 5 MeV proton irradiation on the electrical performance of $\beta $ -Ga2O3 Schottky barrier diodes (SBDs) are studied in this article to demonstrate the degradation mechanism and behavior related to defects and energy band. After proton irradiation with a fluence of $1\times 10^{{13}}$ n/cm2, the forward current density of $\beta $ -Ga2O3 SBD decreases, the barrier height rises by 0.2 eV, and the ideality factor degenerates from 1.056 to 1.092. The carrier concentration in the epilayer (from $1.05\times 10^{{16}}$ to $0.3\times 10^{{16}}$ $\text{cm}^{-{3}}$ ), obtained from C–V characteristics, notably reduces due to trap states in the drift layer, leading to a higher barrier height. On the other hand, the Poole-Frenkel emission (PFE) mechanism is found to cause the reverse leakage of $\beta $ -Ga2O3 SBD after proton irradiation, utilizing temperature-dependent current-voltage I–V measurements. The deep-level transient spectroscopy (DLTS) measurements further reveal that ${E}_{c}$ -0.82 eV (shifted to ${E}_{c}$ -0.81 eV) originates from preexisting defects, while ${E}_{c}$ -0.72 eV and ${E}_{c}$ -1.04 eV are newly introduced by the proton irradiation. The relatively shallow trap states ${E}_{c}$ -0.72 eV with a large capture cross section ( $2.25\times 10^{-{12}}$ $\text{cm}^{-{2}}$ ) contribute to PFE and dominate the trap-assisted leakage. Finally, the lower trap activation energy (from 0.82 to 0.72 eV) and higher Schottky barrier height (from 0.90 to 1.18 eV) both result in the degradation of both forward conduction and reverse leakage in $\beta $ -Ga2O3 SBDs.

关键词： Protons Radiation effects Schottky barriers Leakage currents Degradation Atoms Temperature measurement Substrates Dielectric constant Current density

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Vertical‐organic‐nanocrystal‐arrays for crossbar memristors with tuning switching dynamics toward neuromorphic computing

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SmartMat 2021年第1期2卷 99-108页

作者： Fangxu Yang Lingjie Sun Qingxi Duan Huanli Dong Zhaokun Jing Yuchao Yang Rongjin Li Xiaotao Zhang Wenping Hu Leon Chua Key Laboratory of Molecular Optoelectronic Sciences School of ScienceTianjin UniversityTianjinChina Beijing National Research Center for Molecular Sciences Chinese Academy of SciencesBeijingChina Joint School of National University of Singapore and Tianjin University International Campus of Tianjin UniversityBinhai New CityFuzhouChina Key Laboratory of Microelectronic Devices and Circuits(MOE) Institute of MicroelectronicsPeking UniversityBeijingChina Department of Electrical Engineering and Computer Sciences University of CaliforniaBerkeleyCaliforniaUSA

Memristors proposed by Leon Chua provide a new type of memory device for novel neuromorphic computing ***,the approaching of distinct multi‐intermediate states for tunable switching dynamics,the con-trolling of conducting filaments(CFs)toward high device repeatability and reproducibility,and the ability for large‐scale preparation devices,remain full of ***,we show that vertical‐organic‐nanocrystal‐arrays(VONAs)could make a way toward the *** perfect one‐dimensional structure of the VONAs could confine the CFs accurately with fine‐tune resistance states in a broad range of 103 *** availability of large‐area VONAs makes the fabrication of large‐area crossbar memristor arrays facilely,and the analog switching characteristic of the memristors is to effectively imitate different kinds of synaptic plasticity,indicating their great potential in future applications.

关键词： conducting filament memristor organic electronics organic single crystal

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Unconventional surface responses of fourfold-degenerate Dirac-nodal-line semimetals in sonic crystals

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Physical Review Applied 2023年第6期20卷 064047-064047页

作者： Chang-Yin Ji Jijie Tang Xiao-Ping Li Zheng Tang Di Zhou Yeliang Wang Feng Li Jiafang Li Yugui Yao Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE) Beijing Key Laboratory of Nanophotonics and Ultrafine Optoelectronic Systems and School of Physics Beijing Institute of Technology Beijing 100081 China School of Integrated Circuits and Electronics Ministry of Industry and Information Technology (MIIT) Key Laboratory for Low-Dimensional Quantum Structure and Devices Beijing Institute of Technology Beijing 100081 China School of Physical Science and Technology Inner Mongolia University Hohhot 010021 China

Three-dimensional nodal-line semimetals (NLSMs) are of remarkable importance for both enriching topological physics and wave management. However, NLSMs realized in acoustic systems are twofold band degenerate and are called Weyl NLSMs. Here, we report on the experimental observation of Dirac NLSMs with fourfold degeneracy in sonic crystals. We reveal that the topological properties of the Dirac NLSMs are entirely different than those of the conventional Weyl NLSMs. The Berry phase related to the Dirac nodal line (DNL) is 2π, which results in surface responses of the Dirac NLSMs in two radically different situations: a torus surface state occupying the entire surface Brillouin zone (SBZ) and one without any surface state in the SBZ. We further reveal that topological surface arcs caused by the DNL can change from open to closed contours. The findings of Dirac NLSMs and their unique surface response may bring about exciting frontiers for the flexible manipulation of acoustic surface waves.

关键词： Acoustic metamaterials Edge states Geometric & topological phases Topological insulators Dirac semimetal Semimetals Weyl semimetal

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Arbitrary noise generator based on solid-state spin systems

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Physical Review Applied 2024年第6期22卷 064007-064007页

作者： Yifan Zhang Yue Fu Bo Zhang Center for Quantum Technology Research and Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurements (MOE) School of Physics Beijing Institute of Technology Beijing 100081 China Center for Interdisciplinary Science of Optical Quantum and NEMS Integration School of Physics Beijing Institute of Technology Beijing 100081 China School of Integrated Circuits and Electronics MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices Beijing Institute of Technology Beijing 100081 China MIIT Key Laboratory of Complex-field Intelligent Exploration Beijing Institute of Technology Beijing 100081 China

A controlled noise environment provides a unique platform for the investigation of various quantum technologies. Here, we demonstrate a technique to engineer arbitrary unitary baths in quantum systems with solid-state spin systems. A wide variety of classical noise models, including the generation of dephasing noise and amplitude-damping noise was realized through precise modulation of microwave signals. By measuring the power spectral density of the noise with the aid of single nitrogen-vacancy (N-V) color centers in diamond, we confirm that the generated noise closely matches the theoretical expectations. This technique serves as a powerful toolkit for validating quantum control protocols, simulating decoherence processes in other quantum systems, and generating baths essential for studying quantum thermodynamics.

关键词： Quantum control Nitrogen vacancy centers in diamond Optically detected magnetic resonance Spin noise spectroscopy

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通过高通量研究识别用于本征陡坡晶体管的原子级薄孤立能带沟道材料

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Science Bulletin 2024年第10期69卷 1427-1436页

作者：屈恒泽张胜利曹江吴振华柴扬李卫胜李连忠任文才王欣然曾海波 MIIT Key Laboratory of Advanced Display Materials and Devices College of Material Science and EngineeringNanjing University of Science and TechnologyNanjing 210094China School of Electronic and Optical Engineering Nanjing University of Science and TechnologyNanjing 210094China Key Laboratory of Microelectronics Device and Integrated Technology Institute of Microelectronics of Chinese Academy of SciencesBeijing 100029China Department of Applied Physics The Hong Kong Polytechnic UniversityHong Kong 999077China National Laboratory of Solid State Microstructures School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced MicrostructuresNanjing UniversityNanjing 210023China Department of Mechanical Engineering The University of Hong KongHong Kong 999077China Shenyang National Laboratory for Materials Science Institute of Metal ResearchChinese Academy of SciencesShenyang 110016China School of Integrated Circuits Nanjing UniversitySuzhou 215163China Suzhou Laboratory Suzhou 215009China

Developing low-power FETs holds significant importance in advancing logic circuits,especially as the feature size of MOSFETs approaches sub-10 ***,this has been restricted by the thermionic limitation of SS,which is limited to 60 mV per decade at room ***,we proposed a strategy that utilizes 2D semiconductors with an isolated-band feature as channels to realize subthermionic SS in *** high-throughput calculations,we established a guiding principle that combines the atomic structure and orbital interaction to identify their sub-thermionic transport *** guides us to screen 192 candidates from the 2D material database comprising 1608 ***,the physical relationship between the sub-thermionic transport performances and electronic structures is further revealed,which enables us to predict 15 systems with promising device performances for low-power applications with supply voltage below 0.5 *** work opens a new way for the low-power electronics based on 2D materials and would inspire extensive interests in the experimental exploration of intrinsic steep-slope MOSFETs.

关键词： 2D materials Electronic band structures Transport properties Steep-slope transistors DFT-NEGF calculations

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Tuning 2D magnetism in Fe3+XGeTe2 films by element doping

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National Science Review 2022年第6期9卷 163-170页

作者： Shanshan Liu Zihan Li Ke Yang Enze Zhang Awadhesh Narayan Xiaoqian Zhang Jiayi Zhu Wenqing Liu Zhiming Liao Masaki Kudo Takaaki Toriyama Yunkun Yang Qiang Li Linfeng Ai Ce Huang Jiabao Sun Xiaojiao Guo Wenzhong Bao Qingsong Deng Yanhui Chen Lifeng Yin Jian Shen Xiaodong Han Syo Matsumura Jin Zou Yongbing Xu Xiaodong Xu Hua Wu Faxian Xiu State Key Laboratory of Surface Physics and Department of Physics Fudan University Institute for Nanoelectronic Devices and Quantum Computing Fudan University College of Science University of Shanghai for Science and Technology Laboratory for Computational Physical Sciences(MOE) Fudan University Solid State and Structural Chemistry Unit Indian Institute of Science School of Electronic Science and Engineering Nanjing University Department of Physics University of Washington Department of Electronic Engineering Royal Holloway University of London Materials Engineering The University of Queensland Beijing Key Laboratory of Microstructure and Property of Advanced Materials Institute of Microstructure and Property of Advanced Materials Beijing University of Technology The Ultramicroscopy Research Center Kyushu University State Key Laboratory of ASIC and System School of Microelectronics Fudan University Collaborative Innovation Center of Advanced Microstructures Department of Applied Quantum Physics and Nuclear Engineering Kyushu University Centre for Microscopy and Microanalysis The University of Queensland Shanghai Research Center for Quantum Sciences

Two-dimensional（2D） ferromagnetic materials have been discovered with tunable magnetism and orbital-driven nodal-line features. Controlling the 2D magnetism in exfoliated nanoflakes via electric/magnetic fields enables a boosted Curie temperature（TC） or phase transitions. One of the challenges, however, is the realization of high TC2D magnets that are tunable, robust and suitable for large scale fabrication. Here, we report molecular-beam epitaxy growth of wafer-scale Fe3+XGeTe2films with TCabove room temperature. By controlling the Fe composition in Fe3+XGeTe2, a continuously modulated TCin a broad range of 185–320 K has been achieved. This widely tunable TCis attributed to the doped interlayer Fe that provides a 40% enhancement around the optimal composition X = 2. We further fabricated magnetic tunneling junction device arrays that exhibit clear tunneling signals. Our results show an effective and reliable approach, i.e. element doping, to producing robust and tunable ferromagnetism beyond room temperature in a large-scale 2D Fe3+XGeTe2fashion.

关键词： 2D ferromagnetic material Fe3+XGeTe2 film element doping above room temperature TC tunability

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