In this paper, the recovery characteristics of negative bias temperature instability (NBTI) of pMOSFETs under drain bias were studied. It is observed that, the drain bias not only worsens the NBTI degradation in high ...
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ISBN:
(纸本)9781424421855
In this paper, the recovery characteristics of negative bias temperature instability (NBTI) of pMOSFETs under drain bias were studied. It is observed that, the drain bias not only worsens the NBTI degradation in high |V ds | region but also suppresses the recovery ratio of NBTI. The time evolutions of recovery show that the drain bias dependent NBTI recovery is mainly related to the fast recovery effect in initial 1s. While in long time scale, the recovery obeys power law dependence on time. A physical model based on donor-type interface traps neutralization at the beginning of recovery is proposed to explain the suppressed recovery ratio under drain bias.
This paper has reported a programmable switch composed of copper-doped-SiO 2 sandwiched between Cu top electrode and inert W bottom electrode. Reproducible rectifying-like I-V performance was found in the device with...
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ISBN:
(纸本)9781424421855;9781424421862
This paper has reported a programmable switch composed of copper-doped-SiO 2 sandwiched between Cu top electrode and inert W bottom electrode. Reproducible rectifying-like I-V performance was found in the device with top electrode (TE), while with regard to the cell without TE, no rectifying-like I-V characterization was observed. This rectifying-like I-V curve is properly caused by electrode contact. To further prove the effect of TE, R ON retention behavior of the device with TE and without TE were investigated. The testing results clearly showed that the R ON retention property of device with TE was worse than that without TE. We propose a model for the interface between top electrode and copper-doped-SiO 2 to interpret this rectifying-like performance, which indicates that interface rectifying-like effect emerges when on-resistance is comparable with the resistance of diode-like junction between metal contact and resistive-material. The results suggest that optimizing interface condition or adjusting resistive material with large on-resistance is essential for robust MIM RRAM design.
We report on an AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistor（MOS-HEMT） using thermal oxidation of electron-beam deposited aluminum as the gate dielectric. This novel dielectric deposition pr...
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We report on an AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistor（MOS-HEMT） using thermal oxidation of electron-beam deposited aluminum as the gate dielectric. This novel dielectric deposition process is simple,and less expensive than electron cyclotron resonance（ECR） plasma oxidation of Al or atomic layer deposited（ALD） *** X-ray Photoelectron Spectroscopy（XPS） Ols spectrum showed that the AlO with a bandgap of 7.8 eV was obtained in this *** resulted MOS-HEMT exhibits several orders of magnitude lower gate leakage,larger drain saturation current and larger gate voltage swing compared to a conventional AlGaN/GaN high-electron-mobility transistor（HEMT） of similar *** MOS-HEMT is therefore a viable alternative to regular HEMTs for high-power, high-frequency and high-temperature applications.
This paper has reported a programmable switch composed of copper-doped-SiO sandwiched between Cu top electrode and inert W bottom electrode. Reproducible rectifying-like I-V performance was found in the device with to...
详细信息
This paper has reported a programmable switch composed of copper-doped-SiO sandwiched between Cu top electrode and inert W bottom electrode. Reproducible rectifying-like I-V performance was found in the device with top electrode（TE）,while with regard to the cell without TE,no rectifying-like I-V characterization was *** rectifying-like I-V curve is properly caused by electrode *** further prove the effect of TE,R retention behavior of the device with TE and without TE were *** testing results clearly showed that the R retention property of device with TE was worse than that without *** propose a model for the interface between top electrode and copper-doped-SiO to interpret this rectifying-like performance,which indicates that interface rectifying-like effect emerges when on-resistance is comparable with the resistance of diode-like junction between metal contact and *** results suggest that optimizing interface condition or adjusting resistive material with large on-resistance is essential for robust MTM RRAM design.
We report on an AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT) using thermal oxidation of electron-beam deposited aluminum as the gate dielectric. This novel dielectric deposition pro...
详细信息
ISBN:
(纸本)9781424421855
We report on an AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT) using thermal oxidation of electron-beam deposited aluminum as the gate dielectric. This novel dielectric deposition process is simple, and less expensive than electron cyclotron resonance (ECR) plasma oxidation of Al or atomic layer deposited (ALD) Al 2 O 3 . The X-ray Photoelectron Spectroscopy (XPS) Ols spectrum showed that the Al 2 O 3 with a bandgap of 7.8 eV was obtained in this specimen. The resulted MOS-HEMT exhibits several orders of magnitude lower gate leakage, larger drain saturation current and larger gate voltage swing compared to a conventional AlGaN/GaN high-electron-mobility transistor (HEMT) of similar design. The MOS-HEMT is therefore a viable alternative to regular HEMTs for high-power, high-frequency and high-temperature applications.
This paper presents a unified physical model to elucidate the resistive switching behavior of metal-oxide-based resistive random access memory (RRAM) devices using the ion-transport-recombination model. In this model,...
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This paper presents a unified physical model to elucidate the resistive switching behavior of metal-oxide-based resistive random access memory (RRAM) devices using the ion-transport-recombination model. In this model, the rupture of conductive filaments is caused by recombination of oxygen ions and electron-low-occupied oxygen vacancies. The transport equations of interstitial oxygen ions in the oxide matrix are introduced to quantitatively investigate the reset speed and other properties such as uniformity, endurance, and reset current. The proposed mechanism was verified by experiments.
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