检索结果-内蒙古大学图书馆

2023 China Semiconductor Technology International Conference, CSTIC 2023

作者： Wei, Yanzhao Yao, Jiaxin Xu, Renren Zhang, Qingzhu Yin, Huaxiang Chinese Academy of Sciences Integrated Circuit Advanced Process R&d Center Institute of Microelectronics Beijing100029 China Institute of Microelectronics Chinese Academy of Sciences Key Laboratory of Microelectronic Devices and Integrated Technology Beijing100029 China University of Chinese Academy of Sciences School of Integrated Circuits Beijing100049 China

ISBN: (纸本)9798350311006

In this paper, a La2O3/HfO2 bi-layer dipole-first (DF) process is proposed and investigated by ultra-low temperature PVD dielectric laminates to achieve lower gate effective work function (EWF) for monolithic 3D-IC (M3D) application. The impacts of ultra-low temperature La-dipole on EWF modulation and interfacial properties are comprehensively investigated. It is found that the flat-band voltage (VFB) negatively shifts 60 mV with sub-1nm La2O3 thickness, which provides an effective way to meet the require of Si conduction band-edge EWF modulation. Furthermore, the electron trap/detrap densities (Not) and interfacial trap densities (Dit) are suppressed by La2O3/HfO2 bi-layer DF process to improve device performance. These results exhibit a promising bi-layer DF process in low thermal integration for advanced IC technology. © 2023 IEEE.

关键词： Timing circuits

来源：评论

学校读者我要写书评

暂无评论

An Implantable Readout Circuit with On-Chip Reference Buffer for the Detection of Biological Electrical Signals Employing Artificial Intelligence Algorithms to Compensate and Calibrate 3

An Implantable Readout Circuit with On-Chip Reference Buffer...

引用

3rd International Conference on Artificial Intelligence and Advanced Manufacture, AIAM 2021

作者： Zhou, Fei Zhang, Yacong Zhu, Runkun School of Software and Microelectronics Peking University Beijing China Key Laboratory of Microelectronic Devices and Circuits Department of Microelectronics Peking University Beijing China

ISBN: (纸本)9781450385046

This paper proposes an implantable readout circuit with on-chip reference voltage. Meanwhile, artificial intelligence algorithms are used to dynamically adjust the calibration and signal processing of the circuit. In the reference buffer block, in order to avoid the voltage reference drifting due to excessive load, an offset compensation DAC with current provided by internal current source is applied to solve the problem of drawing current from voltage reference. Moreover, a low-dropout (LDO) regulator with improved transient responses is proposed to provide voltage reference for driving the successive approximation register (SAR) analog-to-digital converter (ADC) capacitor array. In the digital control block, through the processing of artificial intelligence algorithms, the performance of the entire circuit has been significantly improved. The readout circuit is implemented in standard 180-nm 1.8V/5V CMOS process. The LDO achieves only a 5.4μW static power consumption in the ADC conversion process. The power consumption of the bandgap reference circuit, bias buffer and LDO is 12.6μW, leading to a 57.2μW total power cost for the readout circuit. The digital calibration algorithm makes the ENOB of SAR ADC reaches 9.78. © 2021 ACM.

关键词： Timing circuits

来源：评论

学校读者我要写书评

暂无评论

Improved turn-on behavior in a diode-triggered silicon-controlled rectifier for high-speed electrostatic discharge protection

引用

Science China(Information Sciences) 2019年第6期62卷 79-86页

作者： Lizhong ZHANG Yuan WANG Yize WANG Xing ZHANG YANDong HE Key Laboratory of Microelectronic Devices and Circuits (MoE) Institute of MicroelectronicsPeking University

A conventional diode-triggered silicon-controlled rectifier(DTSCR) structure with a layout strategy for electrostatic discharge(ESD) protection is presented and confirmed in a 65-nm CMOS *** modified device is featured by a scaled-down trigger-diode string, which shortens its turn-on time using a variable scaling factor. To confirm the parasitic resistance adjustments of the modified DTSCR, transmission line pulsing(TLP)/very fast transmission line pulsing(VF-TLP) tests and simulations are performed on the device. Compared to a conventional DTSCR, this structure exhibits an improved turn-on speed and robustness, which are suitable for I/O protection of ESD events in the nanosecond range, particularly the charged-device model(CDM) event.

关键词： diode triggered silicon controlled rectifier(DTSCR) electrostatic discharge(ESD) transmission line pulsing(TLP) very fast transmission line pulsing(VF-TLP) turn-on behavior

来源：评论

学校读者我要写书评

暂无评论

Low power and high uniformity of HfOx-based RRAM via tip-enhanced electric fields

引用

Science China(Information Sciences) 2019年第10期62卷 164-170页

作者： Xiaokang LI Baotong ZHANG Bowen WANG Xiaoyan XU Yuancheng YANG Shuang SUN Qifeng CAI Shijie HU Xia AN Ming LI Ru HUANG Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of MicroelectronicsPeking University

In this paper, the HfOx-based resistive random access memory（RRAM） devices with sub-100 nm pyramid-type electrodes were fabricated. With the help of tip-enhanced electric field around the pyramid-type electrodes, it was experimentally demonstrated that the novel devices have better cycle-to-cycle variation control, lower forming/set voltage（1.97/0.7V） and faster switching speed（≤30 ns under 0.9V pulse） as well as better endurance reliability than conventional flat electrode resistive memory devices. In addition,the novel RRAM is experimentally demonstrated with independence of electrode number for the first time to present great potential in scaling down. This novel structure metal-oxide based RRAM will be suitable for the future low-power non-volatile memory application.

关键词： RRAM pyramid-type electrode variation reliability switching speed conducting filament

来源：评论

学校读者我要写书评

暂无评论

Unsupervised Learning of Spike-Timing-Dependent Plasticity Based on a Neuromorphic Implementation

Unsupervised Learning of Spike-Timing-Dependent Plasticity B...

引用

IEEE International Conference on Artificial Intelligence circuits and Systems (AICAS)

作者： Yi Zhong Zilin Wang Xiaoxin Cui Jian Cao Yuan Wang Key Laboratory of Microelectronic Devices and Circuits (MoE) MPW Center School of Integrated Circuits Peking University Beijing Laboratory of Future Integrated Circuit Technology and Science Peking University Beijing China

Spiking neural network is a promising endeavor to fulfill brain-like intelligence on the chip. Its learning rule, i.e., spike-timing-dependent plasticity (STDP), derived from neurobiology, is perceived as a powerful candidate to facilitate low-cost and high-performance unsupervised training. In this paper, we present a temporal coding based STDP learning method (TC-STDP) to verify the counter and look-up table based circuit design on a neuromorphic prototype chip. In order to perform on-chip STDP learning in an unsupervised manner, this paper concentrates more on detailing the experimental procedures and practical evaluations, where we introduce the matching score as a quantitative index to carry out label assignment and accuracy confirmation. Evaluation experiments demonstrate that the unsupervised STDP learning achieves best on-chip recognition accuracies of 93.51%, 80.33% on MNIST and EMNIST datasets, respectively. Moreover, experiments conducted on ModelNet40 3D dataset also validate the effectiveness of unsupervised STDP rule to perform possible incremental learning.

关键词：

来源：评论

学校读者我要写书评

暂无评论

Recent progress on fabrication and flat-band physics in 2D transition metal dichalcogenides moiré superlattices

引用

Journal of Semiconductors 2023年第1期44卷 43-55页

作者： Xinyu Huang Xu Han Yunyun Dai Xiaolong Xu Jiahao Yan Mengting Huang Pengfei Ding Decheng Zhang Hui Chen Vijay Laxmi Xu Wu Liwei Liu Yeliang Wang Yang Xu Yuan Huang Advanced Research Institute of Multidisciplinary Science Beijing Institute of TechnologyBeijing 100081China Beijing National Laboratory for Condensed Matter Physics Institute of PhysicsChinese Academy of SciencesBeijing 100190China School of Physical Sciences University of Chinese Academy of SciencesBeijing 100049China School of Integrated Circuits and Electronics MIIT Key Laboratory for Low-Dimensional Quantum Structure and DevicesBeijing Institute of TechnologyBeijing 100081China BIT Chongqing Institute of Microelectronics and Microsystems Chongqing 401332China

Moiré superlattices are formed when overlaying two materials with a slight mismatch in twist angle or lattice constant. They provide a novel platform for the study of strong electronic correlations and non-trivial band topology, where emergent phenomena such as correlated insulating states, unconventional superconductivity, and quantum anomalous Hall effect are discovered. In this review, we focus on the semiconducting transition metal dichalcogenides(TMDs) based moiré systems that host intriguing flat-band physics. We first review the exfoliation methods of two-dimensional materials and the fabrication technique of their moiré structures. Secondly, we overview the progress of the optically excited moiré excitons, which render the main discovery in the early experiments on TMD moiré systems. We then introduce the formation mechanism of flat bands and their potential in the quantum simulation of the Hubbard model with tunable doping, degeneracies, and correlation strength. Finally, we briefly discuss the challenges and future perspectives of this field.

关键词： flat-band physics two-dimensional materials moirésuperlattices Hubbard model moiréexcitons

来源：评论

学校读者我要写书评

暂无评论

A photomemory by selective-assembling hybrid porphyrin-silicon nanowire field-effect transistor

引用

Science China(Information Sciences) 2020年第6期63卷 253-255页

作者： Gong CHEN Bocheng YU Xiaokang LI Xiaoqiao DONG Xiaoyan XU Zhihong LI Ru HUANG Ming LI Key Laboratory of Microelectronic Devices and Circuits(MOE) Institute of MicroelectronicsPeking University National Key Laboratory of Science and Technology on Micro/Nano Fabrication Peking University Faculty of Information Technology Beijing University of Technology

Dear editor,Recently, the integration of photosensitive material and electronic nanodevice has been the center of attention with Internet of things (IoT)technology development [1–3]. The immobilization of such photoactive molecules on the semiconductor surface was necessarily adopted to employ their photoelectric characteristics which can be observed in the solution. Porphyrin-based hybrid transistors have emerged as promising candidates for photonic sensing application due to the

关键词： A photomemory by selective-assembling hybrid porphyrin-silicon nanowire field-effect transistor

来源：评论

学校读者我要写书评

暂无评论

Deep insight into the voltage amplification effect from ferroelectric negative capacitance

引用

Science China(Information Sciences) 2019年第8期62卷 216-218页

作者： Huimin WANG Qianqian HUANG Mengxuan YANG Xing ZHANG Ru HUANG Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of Microelectronics

Dear editor,Power dissipation has become one of the most serious problems for nano-electronics. For conventional transistors, the operation voltage cannot be continuously reduced due to the fundamental limitation of subthreshold swing (SS)(60 mV/decade at room temperature)[1, 2]. The voltage amplification (VA) induced by the negative capacitance

关键词： Deep insight into the voltage amplification effect from ferroelectric negative capacitance

来源：评论

学校读者我要写书评

暂无评论

Study on the Anomalous Characteristics of Random Telegraph Noise in FeFETs

Study on the Anomalous Characteristics of Random Telegraph N...

引用

IEEE Silicon Nanoelectronics Workshop (SNW)

作者： Puyang Cai Yishan Wu Zixuan Sun Hao Li Xiaolei Wang Zhigang Ji Runsheng Wang Ru Huang School of Integrated Circuits Peking University Beijing China National Key Laboratory of Advanced Micro and Nano Manufacture Technology Shanghai Jiaotong University Shanghai China Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences China Beijing

ISBN: (数字)9798350391633

ISBN: (纸本)9798350391640

In this work, we investigate the behavior of random telegraph noise (RTN) in HfO 2 -based FeFETs. Anomalously high location factors of RTN in FeFETs are observed for the first time, which can be successfully explained by the lateral domain wall motion, with the help of a dynamic 2-D phase-field simulation. This work reveals the unique characteristics of RTN in HfO 2 -based FeFETs and provides insight into the ferroelectric switching process.

关键词： Conferences Noise Dynamics Switches Hafnium oxide Silicon FeFETs

来源：评论

学校读者我要写书评

暂无评论

A CMOS Time-of-Flight Image Sensor with High Dynamic Range Digital Pixel 14

A CMOS Time-of-Flight Image Sensor with High Dynamic Range D...

引用

14th IEEE International Conference on ASIC, ASICON 2021

作者： Yu, Shanzhe Zhang, Yacong Zhou, Fei Lu, Wengao Lei, Shuyu Chen, Zhongjian Peking University Key Laboratory of Microelectronic Devices and Circuits Department of Microelectronics China ABAX Sensing Electronic Technology Ningbo China

ISBN: (纸本)9781665411493

To widen measuring range and suppress background light, a CMOS time-of-flight image sensor with high dynamic range digital pixel is proposed. The sensing charge is quantized by extended-counting analogue-to-digital converter (ADC) which consists of pixel coarse quantization and column fine quantization. To maximize dynamic range in limited pixel area, the coarse quantization circuit is shared by 2×2 pixels, in which a novel up/down counter with a small number of transistors is proposed. Based on the pixel circuit, a 32×32 prototype TOF imager with 12μm-pitch digital pixel is designed in 0.11μm 1P4M CMOS image sensor technology. Simulation results show that a 104.6dB dynamic range of this ADC for wide measuring range is achieved at a frame rate of 50Hz. © 2021 IEEE.

关键词： Image sensors

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：