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International Conference on Simulation of Semiconductor Processes and devices (SISPAD)

作者： Ziyi Hu Lado Filipovic Junjie Li Lingfei Wang Zhicheng Wu Rui Chen Yayi Wei Ling Li State Key Laboratory of Fabrication Technologies for Integrated Circuits Institute of Microelectronics Chinese Academy of Sciences Beijing China CDL for Multi-Scale Process Modeling of Semiconductor Devices and Sensors Institute for Microelectronics TU Wien Vienna Austria

ISBN: (数字)9798331516352

ISBN: (纸本)9798331516369

Selective lateral etching of the SiGe layers is one of the most critical steps in Gate-All-Around Field-Effect Transistor (GAAFET) fabrication, which is the basis for the formation of an inner-spacer. Non-uniformity of substrate surface during wet or dry selective etching of SiGe is a common sight in industry, which cannot be modeled using standard process Technology Computer Aided Design (TCAD) approaches. In this paper, we propose a method for the continuous simulation of the two-step dry etching process - anisotropic etching of the Si/SiGe stack and subsequent isotropic selective etching of SiGe - to study the mechanism behind the non-uniform profile formation. The proposed method is able to simulate the non-uniform profile accurately, which was calibrated and verified with experimental data.

关键词： Industries Fabrication Design automation Dry etching Field effect transistors Logic gates Semiconductor process modeling Substrates Standards Silicon germanium

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Effective gate length model for asymmetrical gate-all-around silicon nanowire transistors

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Science China(Information Sciences) 2020年第10期63卷 288-290页

作者： Xiaoqiao DONG Ming LI Wanrong ZHANG Yuancheng YANG Gong CHEN Shuang SUN Jianing WANG Xiaoyan XU Xia AN Key Laboratory of Microelectronic Devices and Circuits Institute of MicroelectronicsPeking University Faculty of Information Technology Beijing University of Technology

Dear editor,With the development of VLSI technology,gateall-around (GAA) silicon nano wire transistor(SNWT) has emerged as one of the most potential candidates for ultimately scaled CMOS devices at the end of the technology *** pioneering research studies have demonstrated super scalability and high performance with GAA SNWT [1-3].Whereas,in the practical fabrica-

关键词： gate-all-around nanowire effective gate length effective model asymmetrical

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High-spatiotemporal-resolution chip analysis using a fiber-coupled quantum sensor based on diamond N-V centers

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Physical Review Applied 2025年第2期23卷 024050-024050页

作者： Youwei Liu Fazhan Zhao Jing Li Zhenfeng Li Lei Wang Bo Li Key Laboratory of Science and Technology on Silicon Devices Institute of Microelectronics Chinese Academy of Sciences 100029 Beijing China School of Integrated Circuits University of Chinese Academy of Sciences 101408 Beijing China Communication and Information Engineering Center Institute of Microelectronics Chinese Academy of Sciences 100029 Beijing China

We propose a chip analysis method using a fiber-optic quantum sensor based on diamond nitrogen-vacancy (N-V) centers to capture the magnetic field associated with short-pulse currents in chips. The fiber-coupled diamond N-V sensor was precisely positioned at the target region of the chip. We performed real-time monitoring of the N-V center fluorescence responses to pulsing magnetic fields generated by the pulse signals in the test chip through continuous-wave optically detected magnetic resonance. This allowed the accurate reconstruction of the chip internal node signal variations. We successfully achieved a time resolution of 200 ns, which was consistent with the metastable state lifetime of the N-V centers at room temperature. Furthermore, we evaluated the shot noise–limited magnetic sensitivity, which was found to be 6.3nT/Hz1/2. The proposed system exhibited swift responsivity to short pulse currents in the chip, providing highly accurate spatial localization of magnetic field variations. It satisfied the demand for rapid response and precise positioning in chip testing. Overall, this study validates the potential application of N-V centers in the domain of chip security analysis, offering a solution for chip diagnostics.

关键词： Quantum optics

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Investigation of Electrical Characteristics on Morphotropic Phase Boundary of Hf1-xZrxO2 for Dynamic Random Access Memories

Investigation of Electrical Characteristics on Morphotropic ...

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China Semiconductor Technology International Conference (CSTIC)

作者： Kun Zhong Huaxiang Yin Zhaohao Zhang Fan Zhang Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing China School of Integrated Circuits University of Chinese Academy of Sciences Beijing China Xidian University Key Laboratory of Wide Bandgap Semiconductor Materials

This paper investigates the properties of different Zr compositions in $\mathrm{H}\mathrm{f}_{1-\mathrm{x}}\mathrm{Z}\mathrm{r}_{\mathrm{x}}\mathrm{O}_{2}$ films. Due to the morphotropic phase boundary (MPB) between the orthorhombic ferroelectric phase and the tetragonal anti-ferroelectric phase, a maximum $\kappa$ value of 55 was obtained for 9 nm $\mathrm{H}\mathrm{f}_{0.4}\mathrm{Z}\mathrm{r}_{0.6}\mathrm{O}_{2}$ films. Furthermore, the sufficiently low leakage current of the capacitors was confirmed. Finally, a promising switching endurance of up to $5\times 10^{9}$ cycles was also performed, which becomes one of the driving forces for next-generation dynamic random access memories (DRAM) cell capacitor dielectric materials.

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Polar Axis Orientation Control of Hafnium-Based Ferroelectric Capacitors with in-Situ AC Electric Bias During Rapid Thermal Annealing

Polar Axis Orientation Control of Hafnium-Based Ferroelectri...

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Symposium on VLSI Technology

作者： Zhaomeng Gao Tianjiao Xin D. Kai Qiwendong Zhao Yiwei Wang Cheng Liu X. Yilin Rui Wang Guangjie Shi Yunzhe Zheng Yonghui Zheng Yan Cheng Hangbing Lyu Key Laboratory of Polar Materials and Devices (MOE) East China Normal University Shanghai China National Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information Technology (CAS) Shanghai China Huawei Technologies Co. Shenzhen China Hualu Technologies Co. Shanghai China Institute of Microelectronics (CAS) Beijing China

ISBN: (数字)9798350361469

ISBN: (纸本)9798350361476

Hafnium-based ferroelectric (FE) thin films, prepared via atomic layer deposition (ALD), suffered from random oriented polar axis (PA), posing challenges and complexities for device scaling and variation. To effectively control the PA orientation and enhance polarization, we employed in-situ AC electric bias (E) during rapid thermal annealing (RTA) treatment (i.e. RTA+E). The main findings are: (1) Direct experimental evidence of variable orthogonal (0-) PA has been obtained for the first time, originating from tetragonal (T-) to O- transition in RTA cooling; (2) Applying E during cooling significantly enhances polarization in hafnium-based FE capacitors up to ~121.6% increase; (3) The RTA+E method effectively controls the O-PA orientation towards the out-of-plane E direction. These findings solidly demonstrate that the PA orientation of O-grain can be controlled in fluorite-type FE thin films.

关键词： Annealing Cooling Films Capacitors Position control Transforms Very large scale integration

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Enhanced hole transport of nonpolar InGaN-based light-emitting diodes with lateral p-type superlattice doping structure

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Fundamental Research 2024年

作者： Tao, Hongchang Xu, Shengrui Zhang, Yachao Su, Huake Gao, Yuan Liu, Xu Ding, Ruixue Xie, Lei Wang, Haitao Zhang, Jincheng Hao, Yue State Key Laboratory of Wide-Bandgap Semiconductor Devices and lntegrated Technology School of Microelectronics Xidian University Xi'an 710071 China Key Laboratory of Analog Integrated Circuits and Systems Ministry of Education School of Microelectronics Xidian University Xi'an 710071 China

In this work, we propose a novel structure for nonpolar (10–10)-plane InGaN-based light-emitting diode (LED) using a lateral p-type Al0.2Ga0.8N/GaN superlattice structure as the hole injection layer. The main objecti... 详细信息

In this work, we propose a novel structure for nonpolar (10–10)-plane InGaN-based light-emitting diode (LED) using a lateral p-type Al_0.2Ga_0.₈N/GaN superlattice structure as the hole injection layer. The main objective is to increase the hole concentration and facilitate vertical hole injection. The nonpolar InGaN-based LED lacks polarization along the growth plane (10–10), but the lateral direction along [0001] exhibits strong polarization. Therefore, the Al_0.2Ga_0.₈N/GaN superlattice structure, which is periodic along the [0001] direction, induces net polarization charges at the GaN/Al_0.2Ga_0.₈N interface, resulting in increased ionization rates of the acceptors. Additionally, the high-density two-dimensional hole gases formed at the Al_0.2Ga_0.₈N/GaN interfaces along the [0001] direction can efficiently inject vertically into the quantum wells. Based on the numerical simulation results, the proposed LED structure offers improved electrical characteristics, effective hole injection, and enhanced optical performance compared to the nonpolar LED with conventional p-type doping structure. © 2024

关键词： Lateral superlattice structure Light-emitting Diodes (LEDs) Nitrides Nonpolar

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Enhanced Pyroelectric Response in Quenched BNT-Based Lead-Free Ferroelectrics for Uncooled Infrared Detection

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Advanced Functional Materials 2025年

作者： Shen, Meng Zhang, Xian Cen, Fangjie Zhang, Qingfeng Zhang, Haibo Zhang, Guangzu Jiang, Shenglin Chen, Yong Hu, Yongming Yao, Kui Hubei Key Laboratory of Micro-Nanoelectronic Materials and Devices Key Laboratory of Intelligent Sensing System and Security of Ministry of Education and School of Microelectronics Hubei University Wuhan430062 China School of Integrated Circuits Engineering Research Center for Functional Ceramics MOE and Wuhan National Laboratory for Optoelectronics Huazhong University of Science and Technology Wuhan430074 China Ministry of Education Key Laboratory of Green Preparation and Application for Functional Materials Hubei Key Laboratory of Micro-Nanoelectronic Materials and Devices Hubei Key Laboratory of Polymer Materials School of Materials Science & Engineering Hubei University Wuhan430062 China School of Materials Science and Engineering State Key Laboratory of Material Processing and Die & Mould Technology Huazhong University of Science and Technology Wuhan430074 China Singapore138634 Singapore

Excellent pyroelectric performance in environmentally friendly lead-free ferroelectrics is highly demanded for uncooled infrared detector. However, the trade-off between room temperature pyroelectric coefficient (proom) and depolarization temperature (Td) remains a major challenge of lead-free ferroelectrics for their device applications. Herein, a superior proom of 13.8 × 10−4 C m−2 K−1 with high Td of 155 °C is achieved in quenched BNT-Fe/Mn-NBT sample. Oxygen vacancy engineering is proposed to solve the constraint between proom and Td in BNT-based ceramics. The local A/B site displacement and oxygen vacancies are constructed in the BNT-Fe/Mn-NBT perovskite structure by quenching treatment, resulting in larger lattice distortion and superior proom. Meanwhile, defect-induced inhomogeneous random field compensates the ferroelectric depolarization field and down-shifts the free energy well, maintaining high Td. The resulting pyroelectric infrared detector made from the high-performance quenched BNT-Fe/Mn-NBT generates the voltage responsivity of 5906 V W−1 and specific detection rate of 1.8 × 108 cm Hz1/2 W−1, which is comparable to the commercial RD-624 type PZT-based pyroelectric infrared detector. © 2025 Wiley-VCH GmbH.

关键词： Perovskite

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Investigation of Nb Ox-based volatile switching device with self-rectifying characteristics

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Science China(Information Sciences) 2019年第12期62卷 277-280页

作者： Yichen FANG Zongwei WANG Caidie CHENG Zhizhen YU Teng ZHANG Yuchao YANG Yimao CAI Ru HUANG Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of MicroelectronicsPeking University

Dear editor,Resistive random access memory (RRAM), one of the most promising emerging non-volatile memory technologies, has been extensively investigated by researchers from both academia and industry due to its fast ... 详细信息

关键词： Investigation of Nb Ox-based volatile switching device with self-rectifying characteristics

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Memory materials and devices:From concept to application

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InfoMat 2020年第2期2卷 261-290页

作者： Zhenhan Zhang Zongwei Wang Tuo Shi Chong Bi Feng Rao Yimao Cai Qi Liu Huaqiang Wu Peng Zhou State Key Laboratory of ASIC and System School of MicroelectronicsFudan UniversityShanghaiChina Key Laboratory of Microelectronic Devices and Circuits(MOE) Institute of MicroelectronicsPeking UniversityBeijingChina Key Laboratory of Microelectronic Devices and Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijingChina College of Materials Science and Engineering Shenzhen UniversityShenzhenChina Institute of Microelectronics Tsinghua UniversityBeijingChina

Memory cells have always been an important element of information *** emerging technologies like big data and cloud computing,the scale and complexity of data storage has reached an unprecedented peak with a much higher requirement for memory *** is well known,better data storage is mostly achieved by ***,as the size of the memory device is reduced,a series of problems,such as drain gate-induced leakage,greatly hinder the performance of memory *** meet the increasing demands of information technology,novel and high-performance memory is urgently ***,emerging memory technologies are expected to improve memory performance and drive the information *** review will focus on the progress of several emerging memory technologies,including two-dimensional material-based memories,resistance random access memory(RRAM),magnetic random access memory(MRAM),and phasechange random access memory(PCRAM).Advantages,mechanisms,and applications of these diverse memory technologies will be discussed in this review.

关键词： memory MRAM PCRAM RRAM two-dimensional material

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Probing phase transition of band topology via radiation topology

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Photonics Research 2024年第6期12卷 1150-1157页

作者： CHANG-YIN JI WENZE LAN PENG FU GANG WANG CHANGZHI GU YELIANG WANG JIAFANG LI YUGUI YAO BAOLI LIU Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement(MOE) Beijing Key Laboratory of Nanophotonics&Ultrafine Optoelectronic Systemsand School of PhysicsBeijing Institute of TechnologyBeijing 100081China School of Integrated Circuits and Electronics MIIT Key Laboratory for Low-Dimensional Quantum Structure and DevicesBeijing Institute of TechnologyBeijing 100081China Beijing National Laboratory for Condensed Matter Physics Institute of PhysicsChinese Academy of SciencesBeijing 100190China School of Physical Sciences CAS Key Laboratory of Vacuum PhysicsUniversity of Chinese Academy of SciencesBeijing 100190China CAS Center for Excellence in Topological Quantum Computation CAS Key Laboratory of Vacuum PhysicsUniversity of Chinese Academy of SciencesBeijing 100190China

Topological photonics has received extensive attention from researchers because it provides brand new physical principles to manipulate *** topology is characterized using the Berry phase defined by Bloch *** now,the scheme for experimentally probing the topological phase transition of band topology has always been relatively lacking in topological ***,radiation topology can be aroused by the far-field polarization singularities of Bloch states,which is described by the Stokes *** such two types of topologies are both related to Bloch states on the band structures,it is rather surprising that their development is almost ***,in optical analogs of the quantum spin Hall effects(QSHEs)and Su-Schrieffer-Heeger model,we reveal the correlation between the phase transition of band topology and radiation topology and then demonstrate that the radiation topology can be employed to study the band topological *** experimentally demonstrate such an intriguing phenomenon in optical analogs of *** findings not only provide an insightful understanding of band topology and radiation topology,but also can serve as a route to manipulate light.

关键词： transition topology topological

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