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Experimental investigation of the gate voltage range of negative differential capacitance in ferroelectric transistors

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Science China(Information Sciences) 2022年第6期65卷 277-278页

作者： Mengxuan YANG Qianqian HUANG Chang SU Liang CHEN Yangyuan WANG Ru HUANG Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of MicroelectronicsPeking University Beijing Laboratory of Future IC Technology and Science Peking University

Dear editor,Recently, ferroelectric(FE)-based negative capacitance FET(NCFET) with ferroelectric/dielectric(FE/DE) gate stack has attracted extensive attention due to its capability of sub-60 mV/dec subthreshold swing... 详细信息

关键词： Ferroelectric Negative differential capacitance effect Polarization Low power Subthreshold swing

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High on-state current p-type tunnel effect transistor based on doping modulation

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Chinese Physics B 2023年第7期32卷 577-581页

作者：孙佳乐张玉明吕红亮吕智军朱翊潘禹澈芦宾 School of Microelectronics Xidian UniversityThe State Key Discipline Laboratory of Wide Band Gap Semiconductor TechnologyXi’an 710071China Department of Integrated Circuit Design Institute of Microelectronics TechnologyXi’an 710071China School of Physics and Information Engineering Shanxi Normal UniversityTaiyuan 030031China

To solve the problem of the low on-state current in p-type tunnel field-effect transistors(p-TFETs),this paper analyzes the mechanism of adjusting the tunneling current of a TFET device determined by studying the influence of the peak position of ion implantation on the potential of the p-TFET device surface and the width of the tunneling ***-regulated silicon-based high on-state p-TFET devices are designed and fabricated,and the test results show that the on-state current of the fabricated devices can be increased by about two orders of magnitude compared with the current of other devices with the same *** method provides a new idea for the realization of high on-state current TFET devices.

关键词： tunnel field-effect transistors(TFET) band-to-band tunneling(BTBT) on-state current doping modulation

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Advance in two-dimensional twisted moirématerials:Fabrication,properties,and applications

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Nano Research 2023年第2期16卷 2579-2596页

作者： Han Yang Liwei Liu Huixia Yang Yu Zhang Xu Wu Yuan Huang Hong-Jun Gao Yeliang Wang MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices School of Integrated Circuits and ElectronicsBeijing Institute of TechnologyBeijing 100081China Institute of Physics Chinese Academy of SciencesBeijing 100190China

Two-dimensional(2D)twisted moirématerials,a new class of van der Waals(vdW)layered heterostructures with different twist angles between neighboring layers,have attracted tremendous attention due to their rich emerging *** this review,we systematically summarize the recent progress of 2D twisted moiré***,we introduce several representative fabrication methods and the fascinating topographies of the twisted moiré***,we discuss various remarkable physical properties related to twisted angles,including flat bands,unconventional superconductivity,ferromagnetism,and *** also analyze the potential applications in various twisted moiré***,the challenges and future perspectives of the twisted moirématerials are *** work would spur edge-cutting ideas and related achievements in the scientific and technological frontiers of 2D twisted moirématerials.

关键词： two-dimensional(2D)materials moiré twist superconductivity ferromagnetism

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Sensitivity investigation of 100-MeV proton irradiation to SiGe HBT single event effect

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Chinese Physics B 2024年第1期33卷 554-562页

作者：冯亚辉郭红霞刘益维欧阳晓平张晋新马武英张凤祁白如雪马晓华郝跃 State Key Laboratory of Wide Bandgap Semiconductor Devices School of MicroelectronicsXidian UniversityXi'an 710071China School of Materials Science and Engineering Xiangtan UniversityXiangtan 411105China School of Space Science and Technology Xidian UniversityXi'an 710071China State Key Laboratory of Experimental Simulation and Effects of Strong Pulse Radiation Northwest Institute of Nuclear TechnologyXi'an 710024China

The single event effect(SEE) sensitivity of silicon–germanium heterojunction bipolar transistor(Si Ge HBT) irradiated by 100-Me V proton is investigated. The simulation results indicate that the most sensitive position of the Si Ge HBT device is the emitter center, where the protons pass through the larger collector-substrate(CS) junction. Furthermore, in this work the experimental studies are also carried out by using 100-Me V proton. In order to consider the influence of temperature on SEE, both simulation and experiment are conducted at a temperature of 93 K. At a cryogenic temperature, the carrier mobility increases, which leads to higher transient current peaks, but the duration of the current decreases ***, at the same proton flux, there is only one single event transient(SET) that occurs at 93 K. Thus, the radiation hard ability of the device increases at cryogenic temperatures. The simulation results are found to be qualitatively consistent with the experimental results of 100-Me V protons. To further evaluate the tolerance of the device, the influence of proton on Si Ge HBT after gamma-ray(^(60)Coγ) irradiation is investigated. As a result, as the cumulative dose increases, the introduction of traps results in a significant reduction in both the peak value and duration of the transient currents.

关键词： silicon–germanium heterojunction bipolar transistor(Si Ge HBT) 100-Me V proton technology computer-aided design(TCAD) single event effect(SEE)

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High performance carrier stored trench bipolar transistor with dual shielding structure

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Chinese Physics B 2023年第3期32卷 576-582页

作者：张金平邓浩楠朱镕镕李泽宏张波 State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China(UESTC)Chengdu 610054China Institute of Electronic and Information Engineering of UESTC in Guangdong Dongguan 523808China

We propose a novel high performance carrier stored trench bipolar transistor(CSTBT)with dual shielding structure(DSS-CSTBT).The proposed DSS-CSTBT features a double trench structure with different trench profiles in the surface,in which a shallow gate trench is shielded by a deep emitter trench and a thick oxide layer under *** with the conventional CSTBT(con-CSTBT),the proposed DSS-CSTBT not only alleviates the negative impact of the shallow gate trench and highly doped CS layer on the breakdown voltage(BV),but also well reduces the gate-collector capacitance CGC,gate charge Q_(G),and turn-off loss E_(OFF)of the ***,lower turn-on loss E_(ON)and gate drive loss E_(DR)are also *** results show that with the same CS layer doping concentration N_(CS)=1.5×10^(16)cm^(-3),the BV increases from 1312 V of the con-CSTBT to 1423 V of the proposed DSS-CSTBT with oxide layer thickness under gate(T_(og2))of 1μ***,compared with the con-CSTBT,the C_(GC)at V_(CE)of 25 V and miller plateau charge(Q_(GC))for the proposed DSS-CSTBT with T_(og2)of 1μm are reduced by 79.4%and 74.3%,*** the VGEincreases from 0 V to 15 V,the total QGfor the proposed DSS-CSTBT with T_(og2)of 1μm is reduced by 49.5%.As a result,at the same on-state voltage drop(V_(CEON))of 1.55 V,the E_(ON)and E_(OFF)are reduced from 20.3 mJ/cm^(2)and 19.3 mJ/cm^(2)for the con-CSTBT to8.2 mJ/cm^(2)and 9.7 mJ/cm^(2)for the proposed DSS-CSTBT with T_(og2)of 1μm,*** proposed DSS-CSTBT not only significantly improves the trade-off relationship between the V_(CEON)and E_(OFF)but also greatly reduces the E_(ON).

关键词： carrier stored trench bipolar transistor(CSTBT) dual shielding structure gate-collector capacitance power loss

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Enhanced potassium storage of carbon nanofibers as binderfree anodes enabled by coupling ultra-small amorphous Sb_(2)O_(3),graphene modification and sulfur doping

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Rare Metals 2024年第1期43卷 51-64页

作者： Zhao Huang Yu-Kang Lou Lin Peng Yuan Peng Meng-Meng Wang Ming Zhang College of Railway Transportation Hunan University of TechnologyZhuzhou 412007China College of Semiconductors(College of Integrated Circuits) Changsha Semiconductor Technology and Application Innovation Research InstituteHunan UniversityChangsha 410082China Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education College of Semiconductors(College of Integrated Circuits)Hunan UniversityChangsha 410082China

Considering the intrinsic advantages of natural copiousness and cost-effectiveness of potassium resource,potassium-ion batteries(KIBs) are booming as prospective alternatives to lithium-ion batteries(LIBs) in large-scale energy storage scenarios. Nevertheless, lacking desirable electrodes for reversibly hosting the bulky K+hinders the widespread application of KIBs, and it needs to be urgently solved. Hereon, the porous S-doped Sb_(2)O_(3)-graphene-carbon(SAGC) nanofibers are manufactured through an adjustable and facile approach, which involves electrospinning, in situ etching and sulfuration. The synthesized SAGC is featured by the ultra-small amorphous Sb_(2)O_(3) homogeneously wrapped inside the carbon matrix, as well as the co-incorporation of graphene and sulfur. Tentatively,the SAGC nanofiber sheets are applied as binder-free anodes for KIBs, exhibiting a prominent cycling life(256.72 m Ah·g^(-1) over 150 cycles at 100 m A·g^(-1)) and rate·g^(-1) over 100 cycles at 1 A·g^(-1)). The positive synergy among all the active components accounts for the distinguished performances of the SAGC. By reinforcing the tolerability to the swelling stress, producing the valid electrochemical active sites, and promoting the charge transferring for reversible K+uptake, the SAGC finally renders the excellent cyclability, capacity, and rate capability. Moreover, the extrinsic electrochemical pseudocapacitance characteristics induced by the porous carbon substrate elevate the K-storage capacity of the SAGC as well. It is hoped that the conclusions drawn may offer new insights into a direction for the high-performance binderfree KIB anodes.

关键词： S-doped Sb_(2)O_(3)-graphene-carbon Nanofibers Binder-free Anodes Potassium-ion batteries

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Substrate bias effects in p-channel GaN-on-Si transistors

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Science China(Information Sciences) 2025年第1期68卷 404-405页

作者： Mengyao ZHAO Jie MA Lanlan YANG Chuanqi PAN Denggui WANG Jianjun ZHOU Sheng LI Jiaxing WEI Long ZHANG Siyang LIU Weifeng SUN National ASIC System Engineering Research Center School of Integrated Circuits Southeast University National Center of Technology Innovation for Electronic Design Automation Southeast University National Key Laboratory of Solid-State Microwave Devices and Circuits

The drain current （ID） of the n-channel GaN field-effecttransistor （n-FET） is influenced by the substrate-to-source bias voltage (VBS)（substrate bias effect）[1].Actually,nonzero VBSis also likely to occur in p-FET in real application,because the source electrode of p-FET is usually connected to high *** study reports the dependency between IDand VBSin p-FET for the first time,and analyzes the underlying mechanisms from the perspective of vertical electric field （EF） distribution.

关键词： bias effects p-channel substrate transistors

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A High-Efficiency Double Step Down Converter with Dual-Mode Control and Seamless Mode Transition in A Wide Load Current Range 56

A High-Efficiency Double Step Down Converter with Dual-Mode ...

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56th IEEE International Symposium on Circuits and Systems, ISCAS 2023

作者： Xue, Weidong Zhang, Yiseng Lai, Rongxing Zhao, Yutong Fang, Jian Ren, Junyan School of Microelectronics Fudan University Shanghai China State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu China

This paper presents a high-efficiency double step-down power converter with a dual-mode control scheme in a wide load range. A voltage-mode control scheme with an instant Tzcd and \text{Tsw}/2 mirror is employed in discontinuous conduction mode (DCM). It avoids negative inductor current in DCM and improves efficiency in light load with minimized voltage ripples. Meanwhile, a current-mode control scheme is used in continuous conduction mode (CCM), sharing a single feedback controller and \text{Tsw}/2 mirror controller with DCM. The inherent time difference of detection cycles between DCM and CCM is used to realize a seamless dual-mode transition. The converter is designed with a conversion for 12.0 V to 1.0 V at 1-MHz switching frequency, based on a 0.15-{\mu m} high-voltage BCD process. The simulation shows that a power efficiency of 79.8% is achieved with a dual-mode control under a 200-mA current load, which is the 7.2% higher than the counterpart without dual-mode control. Moreover, the power efficiency is above 76.5% even at a 50mA load with an improvement of 14.1%. © 2023 IEEE.

关键词： Mirrors

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A Systematic Characterization Method for Time-resolved Stability and Reliability Issues on Lateral GaN Power devices 35

A Systematic Characterization Method for Time-resolved Stabi...

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35th International Symposium on Power Semiconductor devices and ICs, ISPSD 2023

作者： Huang, Yifei Jiang, Qimeng Huang, Sen Liu, Xinyu University of Chinese Academy of Sciences Beijing100049 China Institute of Microelectronics The Chinese Academy of Sciences Key Laboratory of Microelectronic Devices & Integrated Technology Beijing100029 China

ISBN: (纸本)9798350396829

In this work, three testing modes, including continuous hard switching testing (HSW), high-voltage DC stress testing (DC) and recovery testing (RE), are implemented to characterize time-resolved dynamic RON behaviors of GaN HEMT devices, based on the inductive-load evaluation platform. The proposed stressing pattern (DC-HSW-DC-RE) enables the separation of de-stress- and transient-stress-induced dynamic RON. Based on the stressing pattern, a novel physical-based characterization method is proposed to identify the irreversible degradation of dynamic RON, featuring excellent sensitivity when compared with the traditional methods. In addition, lifetime acceleration experiments are carried out, and the irreversible RON degradation exhibits a strong dependence on voltage and current, but a weak dependence on temperature. © 2023 IEEE.

关键词： Gallium nitride

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Simulation and optimization of dopant-free asymmetric heterojunction solar cells

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Optoelectronics Letters 2023年第6期19卷 337-346页

作者： ZHENG Qiaoqiao YUAN Yujie HOU Guofu LI Wei TAO Ke PENG Zhuo Tianjin Key Laboratory of Film Electronic and Communication Devices School of Integrated Circuit Science and EngineeringTianjin University of TechnologyTianjin 300384China Institute of Photoelectronic Thin Film Devices and Technology Nankai UniversityTianjin 300350China

In order to further study doping-free asymmetric heterojunction(DASH) solar cells,we used AFORS-HET software to optimize the structure of Al/SnO_(2)/a-Si:H(i)/c-Si(p)/a-Si:H(i)/NiO_(x)/*** a certain adjustment range,a series of simulations were carried out on the band gap,electron affinity,thickness and work function(WF) of NiO_(x),thickness and WF of SnO_(2),and the thickness of a-Si:H(i).After the above optimization,21.08% efficiency was obtained at 300 *** study shows that the solar cells with this structure have good light absorption properties in a very wide *** present simulation provides instructive suggestions for follow-up experiments of DASH solar cells.

关键词： spectrum asymmetric optimization

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