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16th IEEE International Conference on Solid-State and integrated Circuit technology, ICSICT 2022

作者： Han, Yongkang Zhang, Wenjun Cao, Yue Jiang, Haijun Zhou, Ruixi Xu, Xiaoxin Yang, Jianguo Zhejiang Lab Hangzhou311121 China Institute of Microelectronics of the Chinese Academy of Sciences Key Laboratory of Microelectronics Devices and Integrated Technology Beijing100029 China

ISBN: (数字)9781665469067

ISBN: (纸本)9781665469067

This article proposes a bandgap for RRAM storage, which can work at a minimum of 0.7V power supply and provide a reference voltage of 0.1V. The circuit uses sub threshold technology to reduce the power supply voltage, symmetrical OTA structure to improve the PVT characteristics, and cascode technology to improve the accuracy of reference current. The temperature coefficient (TC) of 1.4ppm/°C was obtained under the 0.18um process from 0 to 100°C, and 1.5uA current was finally consumed under the 0.9V power supply voltage. © 2022 IEEE.

关键词： Energy gap

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Investigation of Antimony ions doping on crystal structure and enhanced microwave dielectric performance of MgTa_(2)O_(6)ceramics

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Journal of Materiomics 2023年第4期9卷 701-708页

作者： Liang Shi Kui Liu Cheng Liu Dainan Zhang Huaiwu Zhang School of Electronic Science and Engineering University of Electronic Science and Technology of ChinaChengdu610054China State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of ChinaChengdu610054China

Dielectric ceramics are promising in large-scale commercial millimeter-wave communication technology,such as 5G and the upcoming 6G,thanks to their excellent frequency selection characteristics and environmental *** this work,various contents of SbeO bonds were introduced into the MgTa_(2)O_(6)lattice using the solid-phase reaction method to investigate the effects on the lattice and microwave dielectric *** confirms that Sb ions successfully occupy Ta sites in the lattice and cause lattice shrinkage and crystallinity deterioration,which leads to a slight decrease in the quality ***,DFT calculations reveal that the doping leads to electron-biased aggregation toward O atoms,causing higher SbeO ionicity,but also attenuates the degree of ionization of Ta and Mg ions,which makes the dielectric constant of the doped samples vary non-monotonically with gradient ***,Sb doping substantially enhanced the thermal stability of the ceramics,with TCF values reduced from 36×10^(-6)℃^(-1)to 15×10^(-6)℃^(-1).

关键词： MgTa_(2)O_(6)ceramics Dielectric Raman DFT calculation

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Abnormal Degradation of Gate Leakage Current of Schottky-Type p-GaN Gate HEMTs under Repetitive Surge Current Stress 4

Abnormal Degradation of Gate Leakage Current of Schottky-Typ...

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4th International Conference on Electronic Information Engineering and Computer Science, EIECS 2024

作者： Wang, Xiaoming Chen, Wanjun Shi, Yu Xia, Yun University of Electronic Science and Technology of China State Key Laboratory of Electronic Thin Films and Integrated Devices Chengdu China Shenzhen Pinghu Laboratory Shenzhen China

ISBN: (纸本)9798331531409

Gate performance of Schottky-type p-GaN HEMTs is susceptible to degradation after electrical stress. The reported degradation is generally monotonic and recoverable. In this work, we observe abnormal degradation behavior of gate leakage current (Igss), which is bidirectional and permanent, of device under repetitive surge current stress with high peak values (Ipeak). This may result in a significant increase in power consumption and poor switching characteristics of device. The above degradation phenomenon is confirmed by recovery experiment. We propose that new donor and acceptor traps generated in the p-GaN gate under high electric field and temperature cause the degradation. The generated acceptor traps at the p-GaN/AIGaN interface or in the AIGaN layer may increase the electron barrier height, leading to the decrease of Igssat low VGS. The generated donor traps at metal/p-GaN Schottky junction may enhance the defect-assisted tunneling (DAT), causing the increase of Igss at high V_GS. After stress, part of the electrons and holes, which are captured by the created traps, will not be released, resulting in irreversible degradation. It is confirmed by further stress tests, recovery experiments, temperature-dependent Igs. measurements, and mix-mode TCAD simulation. © 2024 IEEE.

关键词： Gallium nitride

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Review of Technologies for High-Voltage integrated Circuits

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Tsinghua Science and technology 2022年第3期27卷 495-511页

作者： Bo Zhang Wentong Zhang Le Zhu Jian Zu Ming Qiao Zhaoji Li State Key Laboratory of Electronic Thin Films and Integrated Devices and School of Electronic Science and EngineeringUniversity of Electronic Science and Technology of ChinaChengdu 610054China

High-Voltage power integrated Circuits(HVICs) are widely used to realize high-efficiency power conversions(e.g., AC/DC conversion), gate drivers for power devices and LED lighting, and so on. The Bipolar-CMOS-DMOS(BCD) process is proposed to fabricate devices with bipolar, CMOS, and DMOS modes, and thereby realize the single-chip integration of HVICs. The basic integrated technologies of HVICs include High-Voltage(HV) integrated device technology, HV interconnection technology, and isolation technology. The HV integrated device is the core of HVICs. The basic requirements of the HV integrated device are high breakdown voltage, low specific on-resistance,and process compatibility with low-voltage circuits. The REduced SURFace field(RESURF) technology and junction termination technology are developed to optimize the surface field of integration power devices and breakdown voltage. Furthermore, the ENhanced DIelectric layer Field(ENDIF) and REduced BULk Field(REBULF) technologies are proposed to optimize bulk fields. The double/triple RESURF technologies are further developed, and the superjunction concept is introduced to integrated power devices and to reduce the specific on-resistance. This work presents a comprehensive review of these technologies, including the innovation technologies of the authors’ group,such as ENDIF and REBULF, substrate termination technology prospective integrated technologies and HVICs in wide band gap semiconductor materials are also discussed.

关键词： High-Voltage ICs(HVICs) high-voltage integrated technology Bipolar-CMOS-DMOS(BCD)process integrated power semiconductor devices superjunction

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High-performance sub-50nm channel length 3d monolithically stackable vertical igzo tfts for active-matrix application 59th

High-performance sub-50nm channel length 3d monolithically s...

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59th International Symposium, Seminar and Exhibition, Display Week 2022

作者： Duan, Xinlv Huang, Kailiang Feng, Junxiao Yin, Shihui Wang, Zhaogui Jiao, Guangfan Wu, Ying Jing, Weiliang Wang, Zhengbo Li, Jingyu Xu, Jeffrey Chen, Chuanke Chen, Qian Chuai, Xichen Lu, Congyan Yang, Guanhua Geng, Di Li, Ling Liu, Ming Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics of the Chinese Academy of Sciences Beijing China Huawei Technologies Co. LTD China

For the first time, we propose a stackable vertical Channel-All-Around (CAA) IGZO FETs. The device is fabricated in a BEOL-compatible process flow where the channel and gate stack is deposited by Plasma-Enhanced Atomic Layer Deposition (PEALD). The impact of IGZO cycle ratio and plasma power on the device electrical performance are studied. An optimized 50nm-channel-length CAA IGZO FET achieved Ion >30μA/μm and Ioff below 1.8×10-17μA/μm at VDS = 1V. © 2022. John Wiley and Sons Inc. AIAA. All rights reserved.

关键词： Thin film transistors

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Fe-N_(x) sites coupled with core-shell FeS@C nanoparticles to boost the oxygen catalysis for rechargeable Zn-air batteries

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Journal of Energy Chemistry 2024年第3期90卷 565-577,I0013页

作者： Katam Srinivas Zhuo Chen Anran Chen Fei Ma Ming-qiang Zhu Yuanfu Chen School of Integrated Circuit Science and Engineering and State Key Laboratory of Electronic Thin Films and Integrated DevicesUniversity of Electronic Science and Technology of ChinaChengdu 610054SichuanChina College of Mechanical and Electronic Engineering Northwest A&F UniversityYangling 712100ShaanxiChina School of Materials and Energy Yunnan UniversityKunming 650091YunnanChina

The development of efficient single-atom catalysts(SACs) for the oxygen reduction reaction(ORR)remains a formidable challenge,primarily due to the symmetric charge distribution of metal singleatom sites(M-N_(4)).To address such issue,herein,Fe-N_(x) sites coupled synergistic catalysts fabrication strategy is presented to break the uniform electronic distribution,thus enhancing the intrinsic catalytic ***,atomically dispersed Fe-N_(x) sites supported on N/S-doped mesoporous carbon(NSC)coupled with FeS@C core-shell nanoparticles(FAS-NSC@950) is synthesized by a facile hydrothermal reaction and subsequent *** to the presence of an in situ-grown conductive graphitic layer(shell),the FeS nanoparticles(core) effectively adjust the electronic structure of single-atom Fe sites and facilitate the ORR kinetics via short/long-range coupling ***,FAS-NSC@950displays a more positive half-wave potential(E_(1/2)) of 0.871 V with a significantly boosted ORR kinetics(Tafel slope=52.2 mV dec^(-1)),outpacing the commercial Pt/C(E_(1/2)=0.84 V and Tafel slope=54.6 mV dec^(-1)).As a bifunctional electrocatalyst,it displays a smaller bifunctional activity parameter(ΔE) of 0.673 V,surpassing the Pt/C-RuO_(2) combination(ΔE=0.724 V).Besides,the FAS-NSC@950-based zincair battery(ZAB) displays superior power density,specific capacity,and long-term cycling performance to the Pt/C-Ir/C-based *** work significantly contributes to the field by offering a promising strategy to enhance the catalytic activity of SACs for ORR,with potential implications for energy conversion and storage technologies.

关键词： Fe-N_(x)sites Core-shell FeS@C Synergistic interactions Oxygen reduction reaction Zn-air battery

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Heterointerface Engineering-Induced Oxygen Defects for the Manganese Dissolution Inhibition in Aqueous Zinc Ion Batteries

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Energy & Environmental Materials 2024年第3期7卷 112-122页

作者： Wentao Qu Yong Cai Baohui Chen Ming Zhang Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics&Devices School of Physics and ElectronicsHunan UniversityChangsha 410082China Engineering Research Center of Advanced Semiconductor Technology and Application of Ministry of Education&Key Laboratory for Micro-/Nano-Optoelectronic Devices of Ministry of Education College of Semiconductors(College of Integrated Circuits)Hunan UniversityChangsha 410082China Changsha Semiconductor Technology and Application Innovation Research Institute College of Semiconductors(College of Integrated Circuits)Hunan UniversityChangsha 410082China State Key Laboratory of Disaster Prevention&Reduction for Power Grid Transmission and Distribution Equipment(Hunan Electric Power Corporation Disaster Prevention and Reduction Center) Changsha 410007China

Manganese-based material is a prospective cathode material for aqueous zinc ion batteries(ZIBs)by virtue of its high theoretical capacity,high operating voltage,and low ***,the manganese dissolution during the electrochemical reaction causes its electrochemical cycling stability to be *** this work,heterointerface engineering-induced oxygen defects are introduced into heterostructure MnO_(2)(δa-MnO_(2))by in situ electrochemical activation to inhibit manganese dissolution for aqueous zinc ion ***,the heterointerface between the disordered amorphous and the crystalline MnO_(2)ofδa-MnO_(2)is decisive for the formation of oxygen *** the experimental results indicate that the manganese dissolution ofδa-MnO_(2)is considerably inhibited during the charge/discharge *** analysis indicates that the oxygen defect regulates the electronic and band structure and the Mn-O bonding state of the electrode material,thereby promoting electron transport kinetics as well as inhibiting Mn ***,the capacity ofδa-MnO_(2)does not degrade after 100 cycles at a current density of 0.5 Ag^(-1)and also 91%capacity retention after 500cycles at 1 Ag^(-1).This study provides a promising insight into the development of high-performance manganese-based cathode materials through a facile and low-cost strategy.

关键词： electrochemical activation heterointerface manganese dissolution inhibition oxygen defects zinc ion batteries

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Frequency dependence on polarization switching measurement in ferroelectric capacitors

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Journal of Semiconductors 2022年第1期43卷 90-94页

作者： Zhaomeng Gao Shuxian Lyu Hangbing Lyu Key Laboratory of Microelectronics Device&Integrated Technology Institute of Microelectronics of Chinese Academy of SciencesBeijing 100029China University of Chinese Academy of Sciences Beijing 100049China

Ferroelectric hysteresis loop measurement under high driving frequency generally faces great *** factors in testing circuits such as leakage current and RC delay could result in abnormal hysteresis loops with erroneous rem-nant polarization(P_(r))and coercive field(E_(c)).In this study,positive-up-negative-down(PUND)measurement under a wide fre-quency range was performed on a 10-nm thick Hf_(0.5)Zr_(0.5)O_(2) ferroelectric *** analysis on the leakage current and RC delay was conducted as the polarization switching occurs in the FE *** considering the time lag caused by RC delay,reasonable calibration of current response over the voltage pulse stimulus was employed in the integral of polarization current over *** such a method,rational P-V loops measured at high frequencies(>1 MHz)was successfully *** work provides a comprehensive understanding on the effect of parasitic factors on the polarization switching behavior of FE films.

关键词： PUND measurement HfO_(2)-based ferroelectric RC delay

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Visible light positioning system based on an improved weighted k-nearest neighbor algorithm 4

Visible light positioning system based on an improved weight...

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4th International Conference on Advanced Manufacturing technology and Electronic Information, AMTEI 2024

作者： Tian, Ye Jing, Lei Tong, Zhengrong Li, Peng Wang, Xue Wang, Hao Wang, Zhonghan Jiang, Yongsheng Tianjin Key Laboratory of Thin Film Electronics and Communication Devices Engineering Research Center for Optoelectronic Devices and Communication Technology the Ministry of Education Department of Integrated Circuit Engineering Tianjin University of Technology Tianjin300384 China

ISBN: (数字)9781510688247

ISBN: (纸本)9781510688230

Traditional K-Nearest Neighbors (KNN) and Weighted K-Nearest Neighbors (WKNN) algorithms face challenges due to the fixed selection of the K value. To address this issue, we propose a new algorithm that combines Genetic Algorithm (GA) with WKNN, referred to as GA-WKNN. The GA algorithm optimizes and adjusts the K value, thereby reducing errors in the visible light positioning system. Experimental results show that the GA-optimized WKNN significantly improves localization accuracy compared to traditional methods with a fixed K value. This optimization strategy allows the positioning system to more accurately determine the actual position. © 2025 SPIE.

关键词： Genetic algorithms

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First Demonstration of a Design Methodology for Highly Reliable Operation at High Temperature on 128kb 1T1C FeRAM Chip

First Demonstration of a Design Methodology for Highly Relia...

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2023 IEEE Symposium on VLSI technology and Circuits, VLSI technology and Circuits 2023

作者： Gong, Tiancheng Xu, Lihua Wei, Wei Jiang, Pengfei Yuan, Peng Nie, Bowen Huang, Yuanquan Wang, Yuan Yang, Yang Gao, Jianfeng Li, Junfeng Luo, Jun Wang, Lingfei Yang, Jianguo Luo, Qing Li, Ling Chung, Steve S. Liu, Ming Institute of Microelectronics Chinese Academy of Sciences State Key Laboratory of Fabrication Technologies for Integrated Circuits Beijing China Institute of Microelectronics Chinese Academy of Sciences Laboratory of Microelectronics Devices and Integrated Technology Beijing China Institute of Electronics National Yang Ming Chiao Tung University Taiwan

ISBN: (纸本)9784863488069

In achieving a reliable operation of FRAM arrays at high temperature (300K-400K), we provide an optimized operation design methodology considering the temperature effect on 128kb ITIC FRAM chip for the first time. Firstly, we found that the conventional voltage selection scheme in ITIC FRAM array is not applicable at high temperature since the Pr value read by low voltage decreases at high temperature, leading to a poor yield. Then, the mechanism of Pr degradation under high temperature is systematically investigated through material characterizations and electrical measurements. It was found that the increase of the internal electric field (Ebias) caused by electron de-trapping mainly contributes to the Pr degradation. Moreover, a KMC model considering Ebias is developed, and the optimum voltage, which can mitigate the temperature effect from 300K-400K, is predicted. This predicted voltage is finally validated on 128kb ITIC FeRAM chip, and excellent properties including non-volatile (150°C >106s) and high endurance (>1011) under the predicted voltage are also demonstrated. © 2023 JSAP.

关键词： Temperature

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