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Polarization-encoded neural networks with simplified grating patch

Science China(Technological Sciences) 2025年第2期68卷 269-277页

作者： Chengyan ZHONG Xiang WANG Lingfei LI Yuanchi CUI Lei XIAO Dawei SONG Junxiong GUO Wen HUANG Yufeng GUO Yu LIU College of Integrated Circuit Science and Engineering Nanjing University of Posts and TelecommunicationsNanjing 210023China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing 210023China College of Integrated Circuits Hangzhou Global Scientific and Technological Innovation Centre Zhejiang UniversityHangzhou 310027China Nanjing Mumusili Technology Co. LTDNanjing 211100China School of Integrated Circuits Tsinghua UniversityBeijing 100084China Institute of Advanced Study School of Electronic Information and Electrical EngineeringChengdu UniversityChengdu 610106China State Key Laboratory of Electronic Thin Films and Integrated Devices School of Integrated Circuit Science and EngineeringUniversity of Electronic Science and Technology of ChinaChengdu 610054China

Optical neural networks(ONNs)offer a promising solution for high-performance,energy-efficient artificial intelligence hardware by leveraging the parallelism and speed of ***,the large-scale implementation of ONNs remains challenging due to the bulky footprint and complex control of optical *** this work,we propose and simulate a plasmonic polarized synaptic architecture that overcomes the diffraction limit and enables ultra-compact *** tuning the polarization state of incident light,the optical transmittance through each plasmonic unit can be dynamically adjusted to represent a synaptic *** plasmonic structures,with features as small as 40 nm,operate well below this limit in the visible spectrum(400-750 nm).Compared with diffraction and interference-based circuit designs,our proposed method achieves a substantial reduction in synaptic density by factors of 150000-fold and 1500-fold,***,we successfully demonstrate a proof-of-concept plasmonic ONN applied to the Canadian Institute for Advanced Research—10 classes(CIFAR-10)dataset using a Visual Geometry Group network with 16 layers(VGG16)*** training for 80 epochs,the network achieves an accuracy of 93%.The polarization-tunable plasmonics paves the way towards scalable ONNs for next-generation artificial intelligence(AI)accelerators and smart sensors.

关键词： optical neural networks polarization dependent nanophotonic ultra-compact devices diffraction limit

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Influence of Parasitic Capacitance and Resistance on Performance of 6T-SRAM for Advanced CMOS Circuits Design

Influence of Parasitic Capacitance and Resistance on Perform...

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2022 China Semiconductor technology International Conference, CSTIC 2022

作者： Luo, Yanna Yan, Gangping Cao, Lei Huo, Jiali Zhang, Xuexiang Wei, Yanzhao Tian, Guoliang Zhang, Qingzhu Wu, Zhenhua Yin, Huaxiang Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing100029 China University of Chinese Academy of Sciences Beijing100049 China

ISBN: (数字)9781665497589

ISBN: (纸本)9781665497589

In this paper, the impacts of parasitic capacitance and resistance on the performance of 6T-SRAM are investigated comprehensively by a design-technology co-optimization (DTCO) method and TCAD simulation. It is found that the impact of parasitic capacitance on 6T-SRAM read and write operations is all adverse. However, the influence of parasitic resistance on 6T-SRAM is double-sided and can be used to improve the performance of 6T-SRAM. An optimization strategy of layout and route is proposed for SRAM with high speed, high noise stability or high read and write capabilities. These results provide a useful guidance for the 6T-SRAM layout design toward advanced node CMOS circuits. © 2022 IEEE.

关键词： CMOS integrated circuits

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A High Sensitivity Sandwich-Type Terahertz Metasurface Microfluidic Sensor for Directly Deteection of Aqueous Solutions 38

A High Sensitivity Sandwich-Type Terahertz Metasurface Micro...

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38th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2025

作者： Cao, Yunhao Sun, Hongshun Chen, Yusa Ma, Lijun Li, Liye Liang, Shixiong Jin, Shengxiao Wu, Wengang Peking University School of Integrated Circuits China Tianjin University School of Microelectronics China Cast National Key Laboratory of Science and Technology on Space Microwave Xi'an China

ISBN: (纸本)9798331508890

In order to solve the challenge that THz metasurface sensor has low sensitivity and hard to directly detect aqueous solution, a high sensitivity sandwich-type THz metasurface microfluidic sensor is numerically calculated and experimentally verified. The numerically calculated results show the sensor has a perfect absorption peak at 1.88 THz with a high Q-factor of 52.83 and a high sensitivity of 0.478 THz/RIU. The sensitivity of the proposed novel sensor is 3.51 times higher than that of the conventional transmission metasurface and 3.95 times higher than that of the conventional metasurface perfect absorber (MPA) structure. The measured results are basically consistent with the simulated results. The f corresponding to 0.1 M, 0.5 M, 1.0 M and 1.5 M Na+ aqueous solution (pure water as reference) are 30 GHz, 60 GHz, 80 GHz and 130 GHz, respectively, which fully verifies the high sensing performance and stability of the proposed sensor. © 2025 IEEE.

关键词： Microfluidics

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Manipulating the ion-transference and deposition kinetics by regulating the surface chemistry of zinc metal anodes for rechargeable zinc-air batteries

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Green Energy & Environment 2023年第1期8卷 318-330页

作者： Miao He Chaozhu Shu Ruixing Zheng Wei Xiang Anjun Hu Yu Yan Zhiqun Ran Minglu Li Xiaojuan Wen Ting Zeng Jianping Long College of Materials and Chemistry&Chemical Engineering Chengdu University of Technology1#DongsanluErxianqiaoChengduSichuan610059China State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of ChinaChengduSichuan610054China

Aqueous zinc-air battery(ZAB)has attractive features as the potential energy storage system such as high safety,low cost and good environmental ***,the issue of dendrite growth on zinc metal anodes has seriously hindered the development of ***,the N-doped carbon cloth(NC)prepared via magnetron sputtering is explored as the substrate to induce the uniform nucleation of zinc metal and suppress dendrite *** show that the introduction of heteroatoms accelerates the migration and deposition kinetics of Zn^(2+)by boosting the desolvation process of Zn^(2+),eventually reducing the nucleation ***,theoretical calculation results confirm the zincophilicity of N-containing functional group(such as pyridine N and pyrrole N),which can guide the nucleation and growth of zinc uniformly on the electrode surface by both promoting the redistribution of Zn^(2+) in the vicinity of the surface and enhancing its interaction with zinc *** a result,the half-cell assembled with magnetron sputtered carbon cloth achieves a high zinc stripping/plating coulombic efficiency of 98.8%and long-term stability of over 500 cycles at 0.2 mA cm^(-2).And the Coulombic efficiency reached about 99.5%at the 10th cycle and maintained for more than 210 cycles at a high current density of 5.0 mA cm^(-2).The assembled symmetrical battery can deliver 220 plating/stripping cycles with ultra-low voltage hysteresis of only 11 *** addition,the assembled zinc-air full battery with NC-Zn anode delivers a high special capacity of about 429 mAh g_(Zn)^(-1) and a long life of over 430 *** effectiveness of surface functionalization in promoting the transfer and deposition kinetics of Zn^(2+) presented in this work shows enlightening significance in the development of metal anodes in aqueous electrolytes.

关键词： Zinc metal anodes Dendrite-free Surface chemical regulation Ion-transference kinetics Aqueous zinc-air battery

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Room Temperature Terahertz Magneto-optical Effect of Wafer-scale TbCaBi:Rare-earth Iron Garnet Single-crystal Film under Low Magnetic Field Intensity 2

Room Temperature Terahertz Magneto-optical Effect of Wafer-s...

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2nd IEEE International Conference on Signal, Information and Data Processing, ICSIDP 2024

作者： Xue, Qiang Zhang, Yuan-Jing Yang, Qing-Hui Zhang, Huai-Wu Wen, Qi-Ye University of Electronic Science and Technology of China School of Electronic Science and Engineering State Key Laboratory of Electronic Thin Film and Integrated Devices Chengdu China

ISBN: (纸本)9798331515669

A large-area single-crystal thick film of RIG was successfully created on a 3-inch GGG substrate using the liquid phase epitaxy technique. The RIG crystal had a thickness of approximately 390 micrometres. In the frequency range of 0.1 to 1.0 THz, the RIG material exhibited a notable refractive index of approximately 4.40, with a transmission rate of approximately 40% and an absorption rate varying between 6 and 50 cm-1. Moreover, an investigation into the MO characteristics of the RIG material at THz frequencies was conducted utilising THz time-domain spectroscopy. The experimental results provided evidence of the presence and significance of the MO effect in the RIG crystal. To gain further insight, the THz Faraday rotation angle of RIG crystal was measured under the influence of an external magnetic field of 0.18 T using a THz-TDS system. It is noteworthy that the recorded Faraday rotation angle reached 17°, with the calculated Verdet constant for the RIG sample estimated to be approximately 140°/mm/T. These results highlight the distinctive characteristics of the large-area single-crystal thick film of RIG, which exhibits minimal losses, exceptional transmission capabilities, and robust MO effects within the THz spectral domain. Consequently, this material displays considerable potential for a diverse range of applications, including THz magnetic polarization. © 2024 IEEE.

关键词： Refractive index

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High Current Density and High Breakdown Voltage Enhancement-Mode Gate-Controlled Heterojunction Vertical β-Ga2O3 MOSFET 20

High Current Density and High Breakdown Voltage Enhancement-...

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20th China International Forum on Solid State Lighting and 9th International Forum on Wide Bandgap Semiconductors, SSLCHINA: IFWS 2023

作者： Jiang, Zhuolin Zhao, Kai Deng, Hongru Wei, Yuxi Wei, Jie Luo, Xiaorong University of Electronic Science and Technology of China State Key Laboratory of Electronic Thin Films and Integrated Devices Chengdu China

ISBN: (纸本)9798350385373

In this paper, a novel high-performance enhancement- mode (E-mode) gate-controlled heterojunction β-Ga2O3 vertical power MOSFET (GCH-VMOS) has been proposed and investigated using Sentaurus TCAD simulation. At VGS = 0 V, both the p-type NiO and the metal-insulator- semiconductor (MIS) trench gate structure depletes the conduction channel to realize the E-mode. Furtherly, in the forward blocking state VDS > 0 V, the gate-controlled NiO/β- Ga2O3 heterojunction is reverse biased and enhances the pinch- off effect to obtain a low leakage current and thus high breakdown voltage (BV). In the on-state VGS > 0 V, the NiO/β- Ga2O3 heterojunction is forward biased, and the depletion region shrinks and the channel conduction area increases to achieve high current density. The simulated results showed a positive threshold voltage (VTH) of 0.6 V, a low specific on- resistance (Ron,sp) of 4.26 mΩ·cm2, a high current density of 1.5 kA/cm2, a high BV of 2559 V (at VGS = 0 V) and power figure of merit (PFOM) up to 1.54 GW/cm2 for the GCH-VMOS. The proposed E-mode device demonstrates great potential for the next generation of power electronics. © 2023 IEEE.

关键词： Nickel oxide

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Larger in-plane upper critical field and superconducting diode effect observed in topological superconductor candidate InNbS_(2)nanoribbons

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Nano Research 2024年第7期17卷 6686-6694页

作者： Bo Zheng Changlong Wang Xukun Feng Xiaozhen Sun Shasha Wang Dawei Qiu Xiang Ma Ruimin Li Guanglei Cheng Lan Wang Yalin Lu Peng Li Shengyuan A.Yang Bin Xiang Department of Materials Science and Engineering CAS Key Lab of Materials for Energy ConversionAnhui Laboratory of Advanced Photon Science and TechnologyUniversity of Science and Technology of ChinaHefei 230026China Research Laboratory for Quantum Materials Singapore University of Technology and DesignSingapore 487372Singapore School of Microelectronics University of Science and Technology of ChinaHefei 230052China CAS Key Laboratory of Microscale Magnetic Resonance and School of Physical Sciences University of Science and Technology of ChinaHefei 230026China Lab of Low Dimensional Magnetism and Spintronic Devices School of PhysicsHefei University of TechnologyHefei 230009China Research Laboratory for Quantum Materials IAPMEUniversity of MacaoMacaoChina

Recently,the coexistence of topology and superconductivity has garnered considerable ***,the dimensionality of these materials is crucial for the realization of topological quantum ***,the naturally grown materials,especially with one-dimensional feature that exhibits the coexistence of topology and superconductivity,still face challenges in terms of experimental realization and scalability,which hinders the fundamental research development and the potential to revolutionize quantum ***,we report the first experimental synthesis of quasi-one-dimensional InNbS_(2)nanoribbons that exhibit the coexistence of topological order and superconductivity via a chemical vapor transport ***,the inplane upper critical field of InNbS_(2)nanoribbons exceeds the Pauli paramagnetic limit by more than 2.2 times,which can be attributed to the enhanced spin-orbit coupling and the weakened interlayer interaction between the NbS_(2)layers induced by the insertion of In atoms,making InNbS_(2)exhibit spin-momentum locking similar to that of monolayer NbS_(2).Moreover,for the first time,we report the superconducting diode effect in a quasi-one-dimensional superconductor system without any inherent geometric *** measured maximum efficiency is manifested as 14%,observed atμ0H≈±60 mT,and we propose that the superconducting diode effect can potentially be attributed to the presence of the nontrivial topological *** work provides a platform for studying exotic phenomena in condensed matter physics and potential applications in quantum computing and quantum information processing.

关键词： topological order superconductivity nanoribbon superconducting anisotropy superconducting diode

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Linearly Polarized Polarization-Maintaining Er^(3+)-Doped Fluoride Fiber Laser in the Mid-Infrared

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Journal of Electronic Science and technology 2022年第1期20卷 1-8页

作者： Hong-Yu Luo Yong-Zhi Wang State Key Laboratory of Electronic Thin Films and Integrated Devices School of Optoelectronic Science and EngineeringUniversity of Electronic Science and Technology of ChinaChengdu 610054

We demonstrated the~2.8-μm and~3.5-μm linearly polarized continuous wave(CW)laser outputs from a polarization-maintaining(PM)Er^(3+)-doped fluoride fiber *** introducing a film polarizer into the cavity to select the laser polarization orientation,the~2.8-μm linearly polarized CW laser with a high polarization extinction ratio(PER)of~23 dB and maximum output power of 2.37 W was achieved under double-end pumping at 976 *** adding another 1981-nm pump source simultaneously,the~3.5-μm linearly polarized CW laser was also obtained,giving higher PER of~27 dB and maximum output power of 307 mW which is only limited by the available power of 1981-nm *** the best of our knowledge,this is the first report on a mid-infrared linearly polarized CW PM fiber laser in the>2.5-μm mid-infrared *** work not only opens up opportunities for some new mid-infrared applications,but also provides a promising platform for developing high-stability and versatile mid-infrared laser sources.

关键词： Fiber laser linearly polarized mid-infrared polarization-maintaining(PM)

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Study of the electronic property of large-area PdSe2 films prepared by plasma enhanced chemical vapor deposition at low temperature 9

Study of the electronic property of large-area PdSe2 films p...

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9th International Conference on Energy Materials and Electrical Engineering, ICEMEE 2023

作者： Zhang, Rui Wen, Shaofeng Gong, Yiming Zhang, Qiusong Lan, Changyong Li, Chun State Key Laboratory of Electronic Thin Films and Integrated Devices School of Optoelectronic Science and Engineering University of Electronic Science and Technology of China Chengdu China

ISBN: (纸本)9781510672765

Due to its outstanding qualities, including high carrier mobility, a broadband tunable bandgap, and ambient-environment stability, the two-dimensional material palladium diselenide (PdSe2) has garnered considerable interest. The direct synthesis of PdSe2 on a polyimide (PI) substrate using reported methods in literature is challenging, primarily due to the high synthesis temperature requirement of over 250 °C. In this study, we report the direct synthesis of a large-area PdSe2 film on a PI substrate at 150 °C by Plasma-Enhanced Chemical Vapor Deposition (PECVD). The Hall measurement results show that the film prepared on PI substrate has a carrier mobility of 2.4 cm2 V-1 s-1. Our study demonstrates the effectiveness of PECVD as a method to synthesize large-area PdSe2 films at low temperatures, suggesting prospective applications in flexible electronic devices. © COPYRIGHT SPIE. Downloading of the abstract is permitted for personal use only.

关键词： dimensional material palladium diselenide plasma-enhanced chemical vapor deposition

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A Valuable and Low-Budget Process Scheme of Equivalized 1 nm technology Node Based on 2D Materials

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Nano-Micro Letters 2025年第8期 302-313页

作者： Yang Shen Zhejia Zhang Zhujun Yao Mengge Jin Jintian Gao Yuhan Zhao Wenzhong Bao Yabin Sun He Tian College of Integrated Circuit Science and Engineering Shanghai Key Laboratory of Multidimensional Information ProcessingEast China Normal University State Key Laboratory of ASIC and System School of MicroelectronicsFudan University Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist) Tsinghua University Shaoxin Laboratory

Emerging two-dimensional（2D） semiconductors are among the most promising materials for ultra-scaled transistors due to their intrinsic atomic-level thickness. As the stacking process advances, the complexity and cost of nanosheet field-effect transistors（NSFETs） and complementary FET（CFET） continue to rise. The 1 nm technology node is going to be based on Si-CFET process according to international roadmap for devices and systems（IRDS）(2022, https://irds. ieee. org/), but not publicly confirmed, indicating that more possibilities still exist. The miniaturization advantage of 2D semiconductors motivates us to explore their potential for reducing process costs while matching the performance of next-generation nodes in terms of area, power consumption and speed. In this study, a comprehensive framework is built. A set of MoS2NSFETs were designed and fabricated to extract the key parameters and performances. And then for benchmarking, the sizes of 2D-NSFET are scaled to a extent that both of the Si-CFET and 2D-NSFET have the same average device footprint. Under these conditions, the frequency of ultra-scaled 2D-NSFET is found to improve by 36% at a fixed power consumption. This work verifies the feasibility of replacing silicon-based CFETs of 1 nm node with 2D-NSFETs and proposes a 2D technology solution for 1 nm nodes, i.e., “2D eq 1 nm” nodes. At the same time, thanks to the lower characteristic length of 2D semiconductors, the miniaturized 2D-NSFET achieves a 28% frequency increase at a fixed power consumption. Further, developing a standard cell library, these devices obtain a similar trend in 16-bit RISC-V CPUs. This work quantifies and highlights the advantages of 2D semiconductors in advanced nodes, offering new possibilities for the application of 2D semiconductors in high-speed and low-power integrated circuits.

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