It is important to find a way to modulate the work function of TiN metal gate towards the valence band edge of Si,which can meet the lower threshold voltage requirement of p-type metal-oxide-semiconductor（MOS） *** t...
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It is important to find a way to modulate the work function of TiN metal gate towards the valence band edge of Si,which can meet the lower threshold voltage requirement of p-type metal-oxide-semiconductor（MOS） *** this work,effects of TiN thickness,post-deposition annealing（PDA）,oxygen incorporation and N concentration variation on the work function of TiN metal gate in MOS structures are systematically investigated. It can be found that the work function positively shifts at the initial stage as the thickness of the TiN layer increases and stabilizes at such a *** at N_2 ambience with a trace of O_2 can also cause a positive shift in the work function of TiN metal *** same tendency can be observed when oxygen is incorporated into ***, increasing the N concentration in TiN can also positively shift the work *** these measures are effective in modulating the TiN metal gate so that it is more suitable for PMOS application.
The stability of a graphene field effect transistor（GFET） is important to its performance optimization, and study of hysteresis behavior can propose useful suggestions for GFET fabrication and *** this work,a back-g...
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The stability of a graphene field effect transistor（GFET） is important to its performance optimization, and study of hysteresis behavior can propose useful suggestions for GFET fabrication and *** this work,a back-gate GFET has been fabricated and characterized,which is compatible with the CMOS *** stability of a GFET in air has been studied and it is found that a GFET＇s electrical performance dramatically changes when exposed to *** hysteresis characteristic of a GFET depending on time has been observed and analyzed *** behavior is reversed at room temperature with the Dirac point positive shifted when the GFET is exposed to air after annealing.
The effect of Al incorporation on the effective work function（EWF） of TiN metal gate was systematically ***-oxide-semiconductor（MOS） capacitors with W/TiN/Al/TiN gate stacks were used to fulfill this *** thickness...
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The effect of Al incorporation on the effective work function（EWF） of TiN metal gate was systematically ***-oxide-semiconductor（MOS） capacitors with W/TiN/Al/TiN gate stacks were used to fulfill this *** thickness ratios of Al to TiN and different post metal annealing（PMA） conditions were *** shift of work function towards to Si conduction band was observed,which was suitable for NMOS and the magnitude of shift depends on the processing conditions.
Positive bias temperature instability（PBTI） characteristics and degradation mechanisms of NMOSFET with high-k/metal gate last process have been systematically investigated. The time evolution of threshold voltage sh...
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Positive bias temperature instability（PBTI） characteristics and degradation mechanisms of NMOSFET with high-k/metal gate last process have been systematically investigated. The time evolution of threshold voltage shift during PBTI stress still follows a power law. However, the exponent n decreases from 0.26 to 0.16 linearly as the gate stress voltage increases from 0.6 to 1.2 V. There is no interface state generation during stress because of the negligible sub-threshold swing change. Moreover, the activation energy is 0.1 e V, which implies that electrons directly tunnel into high-k bulk and are trapped by pre-existing traps resulting into PBTI degradation. During recovery the threshold voltage shift is linear in lgt, and a mathematical model is proposed to express threshold voltage shift.
This paper＂ describes and analyses the impact of the Ti layer, which is embedded between the insulator and top electrode, on the programming characteristic of the A1-HfO2-AI antifuse. The programming voltage of the a...
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This paper＂ describes and analyses the impact of the Ti layer, which is embedded between the insulator and top electrode, on the programming characteristic of the A1-HfO2-AI antifuse. The programming voltage of the antiiikse with 120 A HfO2 is properly reduced from 5.5 to 4.6 V with an embedded Ti layer. Low on-state resistance （-19Ω） and low programming voltage （4.6 V） is demonstrated in the embedded Ti antifhse with 120 A H fO2 while keeping sufficient off-state reliability. The antifuse embedded with a Ti layer between the insulator and top electrode has been developed and has potential in field programmable devices.
Planarization used in a gate-last CMOS device was successfully developed by particular technologies of SOG two-step plasma etch-back plus one special etch-back step for SOG/SiO_2 interface *** within-the-wafer ILD thi...
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Planarization used in a gate-last CMOS device was successfully developed by particular technologies of SOG two-step plasma etch-back plus one special etch-back step for SOG/SiO_2 interface *** within-the-wafer ILD thickness non-uniformity can reach 4.19%with a wafer edge exclusion of 5 *** results indicated that there was little＂dish effect＂on the 0.4μm gate-stack structure and finally achieved a good planarization profile on the whole *** technology provided a CMP-less process basis for sub-100 nm high-k/metal gate-last CMOS integration.
A 12.5 Gbps 1：16 demultiplexer （DEMUX） integrated circuit is presented for multi-channel high-speed data transmission. A novel high-speed synchronizing technique is proposed and integrated in this DEMUX chip. Compa...
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A 12.5 Gbps 1：16 demultiplexer （DEMUX） integrated circuit is presented for multi-channel high-speed data transmission. A novel high-speed synchronizing technique is proposed and integrated in this DEMUX chip. Compared with conventional synchronizing techniques, the proposed method largely simplifies the system config- uration. The experimental result demonstrates that the proposed circuit is effective in two-channel synchronization under a clock frequency of 12.5 GHz. The circuit is realized using 1 μm GaAs heterojunction bipolar transistor technology with die area of 2.3 ×2.3 mm^2.
Lead halide perovskites (LHPs) exhibit outstanding optoelectronic properties, making them highly promising for applications in various optoelectronics devices. However, rapid ion migration in LHPs not only undermines ...
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The characteristics of AlGaN/GaN Schottky diodes as polar liquid sensors are *** structures,with a gate metal diameter of 200μm,are designed and fabricated by using a optical lithography ***/Au and Ti/Al/Ni/Au metals...
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The characteristics of AlGaN/GaN Schottky diodes as polar liquid sensors are *** structures,with a gate metal diameter of 200μm,are designed and fabricated by using a optical lithography ***/Au and Ti/Al/Ni/Au metals are used as the Schottky contact and the ohmic contact,*** Schottky diodes exhibit large changes in reverse leakage current at a bias of?20 V in response to the surface exposed to various polar liquids,such as acetone and *** effective Schottky barrier height of the diodes is also changed with the polar *** polar nature of the liquids leads to a change of surface charges,producing a change in surface potential at the semiconductor/liquid *** effect of the SiN_(x) passivation layer thickness on the liquid sensing is also *** results demonstrate that the AlGaN/GaN heterostructures are promising for polar liquids,combustion gas,biological,and strain sensing applications.
Based on the platform of 0.35μm PDSOI CMOS process technology, the partially depleted siliconon-insulator dynamic threshold voltage （PDSOI DT） NMOS with an H-gate was implemented. The analog characteristics and RF ...
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Based on the platform of 0.35μm PDSOI CMOS process technology, the partially depleted siliconon-insulator dynamic threshold voltage （PDSOI DT） NMOS with an H-gate was implemented. The analog characteristics and RF characteristics of the gate-body contacted dynamic threshold voltage H-gate NMOS and con- ventional H-gate NMOS were performed and compared. Furthermore, the fundamental operation principle and physical mechanism of the PDSOI H-gate DTMOS compared with the conventional H-gate NMOS are analyzed in detail. The results indicate that the cutoff frequency can reach 40 GHz and the maximum oscillation frequency 29.43 GHz as Vgs = 0.7 V and Vas = 1 V.
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