Band alignments of high-k dielectrics such as atomic layer d eposition (ALD) grown Hf02 and Ah03 with different thicknesses on Si02/Si stack are investigated by X-ray photoelectron s pectroscopy (XPS). The band offset...
详细信息
A Ku-band power amplifier is successfully developed with an internal-matched single chip 6mm AlGaN/GaN high electron mobility transistors (HEMTs). LCL network together with microstrip circuits are used to directly mat...
详细信息
A fully standard CMOS integrated strained Si-channel NMOSFET has been demonstrated. By adjusting the thickness of graded SiGe, modifying the channel doping concentration, changing the Ge fraction of the relaxed SiGe l...
详细信息
A fully standard CMOS integrated strained Si-channel NMOSFET has been demonstrated. By adjusting the thickness of graded SiGe, modifying the channel doping concentration, changing the Ge fraction of the relaxed SiGe layer and forming a p-well by multiple implantation technology, a surface strained Si-channel NMOSFET was fabricated, of which the low field mobility was enhanced by 140%, compared with the bulk-Si control device. Strained NMOSFET and PMOSFET were used to fabricate a strained CMOS inverter based on a SiGe virtual substrate. Test results indicated that the strained CMOS converter had a drain leakage current much lower than the Si devices, and the device exhibited wonderful on/off-state voltage transmission characteristics.
In this work, PVD and ALD TaN were evaluated as wet etch stop layer (WESL) in order to selectively remove TiN & Ti in the high-k/metal gate (HKMG) gate last CMOS integrations. The selectivity of TiN & Ti towar...
In this work, PVD and ALD TaN were evaluated as wet etch stop layer (WESL) in order to selectively remove TiN & Ti in the high-k/metal gate (HKMG) gate last CMOS integrations. The selectivity of TiN & Ti towards PVD or ALD TaN is achieved at least 5.6 with an ammonia hydrogen peroxide mixture (APM). In case of PVD TaN, nitrogen content in the film has great impact on its chemical resistance. Both of PVD and ALD TaN have enhanced thickness loss by the APM in presence of TiN & Ti. Based on the C-V results of MOS capacitor (MOSCAP), it can be concluded that both PVD and ALD TaN can be introduced into the CMOS integrations as WESL. But, for p-type body MOSCAP (nMOS), ALD TaN thickness should not exceed 1nm. Thanks to excellent filling capability of ALD TaN, it can be extensively used in advanced CMOS technology as WESL.
This paper presents a design of 14-bit 80 Msample/s pipelined ADC implemented in 0.35μm CMOS. A charge-sharing correction is proposed to remove the signal-dependent charge-injection,together with a low-jitter clock c...
详细信息
This paper presents a design of 14-bit 80 Msample/s pipelined ADC implemented in 0.35μm CMOS. A charge-sharing correction is proposed to remove the signal-dependent charge-injection,together with a low-jitter clock circuit,guaranteeing the high dynamic performance for the ADC.A scheme of capacitor-switching and a symmetrical layout technique minimizes capacitor mismatch,ensuring the overall *** measured results show that the calibration-free ADC achieves an effective number of bits of 11.6-bit,spurious free dynamic range （SFDR） of 84.8 dB,signal-to-noise-and-distortion ratio（SNDR） of 72 dB,differential nonlinearity of＋0.63/—0.6 LSB and integrated nonlinearity of＋ 1.3/-0.9 LSB at 36.7 MHz input and maintains over 75 dB SFDR and 59 dB SNDR up to 200 MHz.
A high-performance PMOSFET based on silicon material of hybrid orientation is *** orientation wafers,integrated by（100） and（110） crystal orientation,are fabricated using silicon-silicon bonding, chemical mechanica...
详细信息
A high-performance PMOSFET based on silicon material of hybrid orientation is *** orientation wafers,integrated by（100） and（110） crystal orientation,are fabricated using silicon-silicon bonding, chemical mechanical polishing,etching silicon and non-selective expitaxy.A PMOSFET with W/L = 50μm/8μm is also processed,and the measured results show that the drain-source current and peak mobility of the PMOSFET are enhanced by up to 50.7%and 150%at V_（gs） =-15 V and V_（ds） =-0.5 V,*** mobility values are higher than that reported in the literature.
In the design of phase-change memory（PCM）,it is important to perform numerical simulations to predict the performances of different device *** work presents a numerical simulation using a coupled system including Po...
详细信息
In the design of phase-change memory（PCM）,it is important to perform numerical simulations to predict the performances of different device *** work presents a numerical simulation using a coupled system including Poisson＇s equation,the current continuity equation,the thermal conductivity equation,and phase-change dynamics to simulate the thermal and electric characteristics of phase-change *** method discriminates the common numerical simulation of PCM cells,from which it applies Possion＇s equation and current continuity equations instead of the Laplace equation to depict the electric characteristics of PCM cells,which is more adoptable for the semiconductor characteristics of phase-change *** results show that the simulation agrees with the measurement,and the scalability of PCM is predicted.
Band alignment of TiN/HfO2/SiO2/Si stack is systematically investigated by X-ray photoelectron spectroscopy. The differences of Si 2p binding energies between SiO2 and Si substrate are experimentally found to decrease...
详细信息
Band alignment of TiN/HfO2 interface of TiN/HfO2/SiO2/Si stack is investigated by x-ray photoelectron spectroscopy (XPS). The p-type Schottky barrier height (p-SBH) is found to increase with thicker HfO2 thickness. Si...
详细信息
暂无评论