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Characterization of HfSiAlON/MoAlN PMOSFETs Fabricated by Using a Novel Gate-Last Process

Chinese Physics Letters 2013年第8期30卷 156-159页

作者： XU Gao-Bo XU Qiu-Xia YIN Hua-Xiang ZHOU Hua-Jie YANG Tao NIU Jie-Bin HE Xiao-Bin MENG Ling-Kuan YU Jia-Han LI Jun-Feng YAN Jiang ZHAO Chao CHEN Da-Peng Key Laboratory of Microelectronics Devices&Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029

We fabricate p-channel metal-oxide-semiconductor-field-effect-transistors(PMOSFETs)with a HfSiAlON/MoAlN gate stack using a novel and practical gate-last *** the process,SiO_(2)/poly-Si is adopted as the dummy gate stack and replaced by an HfSiAlON/MoAlN gate stack after source/drain *** of the high-k/metal-gate stack formation after the 1000℃source/drain ion-implant doping activation,the fabricated PMOSFET has good electrical *** device's saturation driving current is 2.71×10^(-4) A/μm(VGS=VDS=-1.5 V)and the off-state current is 2.78×10^(-9) A/μ*** subthreshold slope of 105 mV/dec(VDS=-1.5 V),drain induced barrier lowering of 80 mV/V and Vth of -0.3 V are *** research indicates that the present PMOSFET could be a solution for high performance PMOSFET applications.

关键词： drain PMOSFETs PMOSFET

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Microwave annealing effects on ZnO films deposited by atomic layer deposition

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Journal of Semiconductors 2014年第11期35卷 1-4页

作者：赵士瑞董亚斌于明岩郭晓龙徐昕伟景玉鹏夏洋 Key Laboratory of Microelectronics Devices & Integrated Technology Institute of MicroelectronicsUniversity of Chinese Academy of Sciences

Zinc oxide thin films deposited on glass substrate at 150℃ by atomic layer deposition were annealed by the microwave method at temperatures below 500 ℃. The microwave annealing effects on the structural and luminescent properties of ZnO films have been investigated by X-ray diffraction and photoluminescence. The results show that the MWA process can increase the crystal quality of ZnO thin films with a lower annealing temperature than RTA and relatively decrease the green luminescence of ZnO films. The observed changes have demonstrated that MWA is a viable technique for improving the crystalline quality of ZnO thin film on glass.

关键词： ZnO microwave annealing

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Operation methods of resistive random access memory

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Science China(Technological Sciences) 2014年第12期57卷 2295-2304页

作者： WANG Guo Ming LONG Shi Bing ZHANG Mei Yun LI Yang XU Xiao Xin LIU Hong Tao WANG Ming SUN Peng Xiao SUN Hai Tao LIU Qi Lü Hang Bing YANG Bao He LIU Ming Tianjin Key Laboratory of Film Electronic and Communication Devices Tianjin University of Technology Lab of Nanofabrication and Novel Device Integration Institute of Microelectronics Chinese Academy of Sciences

In this paper, different electrical measurement and operation methods of resistive random access memory （RRAM） have been summarized, including voltage sweeping mode （VSM）, current sweeping mode （CSM）, co lstant current stress （CCS）, constant voltage stress （CVS）, rectangular pulse mode （RPM）, and triangle pulse mode （TPM）. Meanwhile, the effects of these meas- urement methods on the forming, set, reset and read operation as well as endurance performance have been compared. Finally, their respective controllability of various resistive switching parameters have been summar zeal and analyzed.

关键词： resistive random access memory operation method voltage sweeping mode current sweeping mode constant currentstress constant voltage stress rectangular pulse mode triangle pulse mode

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100-nm T-gate InAlAs/InGaAs InP-based HEMTs with f_T = 249 GHz and f_(max) = 415 GHz

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Chinese Physics B 2014年第3期23卷 613-618页

作者：汪丽丹丁芃苏永波陈娇张毕禅金智 Microware Devices and Integrated Circuits Department Key Laboratory of Microelectronics Device and Integrated TechnologyInstitute of Microelectronics Chinese Academy of Sciences

InA1As/InGaAs high electron mobility transistors （HEMTs） on an InP substrate with well-balanced cutoff frequency fT and maximum oscillation frequency frnax are reported. An InA1As/InGaAs HEMT with 100-nm gate length and gate width of 2 × 50 μm shows excellent DC characteristics, including full channel current of 724 mA/mm, extrinsic maximum transconductance *** of 1051 mS/mm, and drain-gate breakdown voltage BVDG of 5.92 V. In addition, this device exhibits fT = 249 GHz and fmax = 415 GHz. These results were obtained by fabricating an asymmetrically recessed gate and minimizing the parasitic resistances. The specific Ohmic contact resistance was reduced to 0.031 ***. Moreover, the fT obtained in this work is the highest ever reported in 100-nm gate length InA1As/InGaAs InP-based HEMTs. The outstanding ***, fT, fmax, and good BVDG make the device suitable for applications in low noise amplifiers, power amplifiers, and high speed circuits.

关键词： InP high electron mobility transistor asymmetrically recessed gate cutoff frequency fx maximumoscillation frequency fmax

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Enhanced vibration energy harvesting of magnetically coupled piezoelectric cantilever beam with double-point stopper

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Mechanical Systems and Signal Processing 2025年 233卷

作者： Wang, Lu Zhang, Ying Liu, Shuai Zhao, Lin-Chuan Hu, Kai-Ming Li, Zhikang Zhao, Libo Zhang, Wen-Ming Meng, Guang State Key Laboratory for Manufacturing Systems Engineering State Industry-Education Integration Center for Medical Innovations International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technologies Shaanxi Innovation Center for Special Sensing and Testing Technology in Extreme Environments Shaanxi Provincial University Engineering Research Center for Micro/Nano Acoustic Devices and Intelligent Systems Xi'an Jiaotong University Xi'an710049 China School of Instrument Science and Technology Xi'an Jiaotong University Xi'an710049 China State Key Laboratory of Mechanical System and Vibration School of Mechanical Engineering Shanghai Jiao Tong University 800 Dongchuan Road Shanghai200240 China

Piezoelectric fragility is concerned with low broadband and large amplitude vibration for energy harvesting in human motion, vehicles, wave energy, etc. The design of the stopper is helpful for the protection and broadband of the piezoelectric vibration energy harvester (PVEH), but the output is limited due to uneven stress distribution and collision energy loss. This paper proposes a U-shaped mass PVEH with double-point stopper and magnetic coupling. The stress homogenization method of the cantilever beam is achieved by converting the collision energy into bending moment by double-point stopper, which effectively improves the electromechanical coupling coefficient of the structure. Thus, the double-point stopper enables 1.5 times saturation displacement within allowable PZT stress. The experimental performance is carried out that PVEH with double-point stopper and magnetic coupling has double higher power output of 10.2 mW than single-point stopper at the excitation level of 0.6 g. The stopper collision and the magnetic coupling broaden the high and low frequency response of the PVEH system jointly. It has voltage output beyond 40 V with broadband of 8–15.6 Hz under 1 g acceleration in test. This work has a good potential in the occasions of the big mass, stopper protection and magnetic coupling design for low frequency, broadband and large amplitude of PVEH. © 2025

关键词： Stress concentration

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Achieving 2.1% Effciency in Alpha-Voltaic Cell Based on Silicon Carbide Transducer

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Energy & Environmental Materials 2025年第2期 309-315页

作者： Runlong Gao Wuying Ma Pengying Wan Ao Liu Xiao Ouyang Xue Du Qiantao Lei Qi Deng Linyue Liu Xiaoping Ouyang Sino-French Institute of Nuclear Engineering and Technology Sun Yat-Sen University National Key Laboratory of Intense Pulsed Radiation Simulation and Effect Northwest Institute of Nuclear Technology School of Microelectronics Xi'an Jiaotong University State Key Laboratory of Wide-Bandgap Semiconductor Power Electronic Devices Nanjing Electronic Devices Institute Key Laboratory of Beam Technology of Ministry of Education School of Physics and Astronomy Beijing Normal University Department of Engineering Physics Tsinghua University Shanghai Institute of Applied Physics Chinese Academy of Sciences

Alpha-voltaic cell is a type of micro nuclear battery that provides several decades of reliable power in the nano watt to microwatt range,supplying for special applications where traditional chemical batteries or solar cells are difficult to ***,the power conversion efficiency of the alpha-voltaic cells reported are still far behind the theoretical limit,making the development of alpha-voltaic cell *** advanced semiconductor transducers with higher efficiency in converting the energy of alpha particles into electric energy is proving to be necessary for realizing high-power conversion ***,we propose an alpha-voltaic cell based on SiC PIN transducer that includes a sensitive region with an area of 1 cm2,a width of 51.2 μm,and a charge collection efficiency of 95.6% at 0 V *** find that optimizing the unintentional doping concentration and crystal quality of the SiC epitaxial layer can significantly increase the absorption and utilization of the energy of alpha particles,resulting in a 2.4-fold enhancement in power conversion efficiency compared with that of the previous *** properties of the SiC alpha-voltaic cell are measured using an He-ion accelerator as the equivalent α-radioisotopes,with the best power conversion efficiency of 2.10% and maximum output power density of 406.66 nW cm-2is *** research makes a big leap in SiC alpha-voltaic cell,bridging the gap between micro nuclear batteries and practical applications in micro-electromechanical systems,micro aerial vehicles,and tiny satellites.

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High-speed readout for direct light orbital angular momentum photodetector via photoelastic modulation

arXiv

引用

arXiv 2025年

作者： Yang, Dehong Xu, Chang Lai, Jiawei Fan, Zipu Liang, Delang Wang, Shiyu Cheng, Jinluo Sun, Dong International Center for Quantum Materials School of Physics Peking University Beijing China Ministry of Education Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter Shaanxi Province Key Laboratory of Quantum Information and Quantum Optoelectronic Devices School of Physics Xi'an Jiaotong University Xi’an China Key Laboratory for Micro-Nano Physics and Technology of Hunan Province Hunan Institute of Optoelectronic Integration College of Materials Science and Engineering Hunan University Changsha China GPL Photonics Laboratory State Key Laboratory of Luminescence Science and Technology Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences Changchun China Collaborative Innovation Center of Quantum Matter Beijing China Frontiers Science Center for Nano-optoelectronics School of Physics Beijing China

Recent progress in direct photodetection of light orbital angular momentum (OAM) based on the orbital photogalvanic effect (OPGE) provides an effective way for on-chip direct electric readout of orbital angular momentum, as well as large-scale integration focal-plane array devices. However, the recognition of OAM order from photocurrent response requires the extraction of circular polarization-dependent response. To date, the operation speed of such detector is currently at the minute level and is limited by slow mechanical polarization modulation and low OAM recognition capability. In this work, we demonstrate that the operation speed can be greatly improved via electrical polarization modulation strategy with photoelasitc modulator accompanied by phase-locked readout approach with lock-in amplifier. We demonstrate an operation speed of up to 1 kHz with this new technology in the mid-infrared region (4 μm) on an OAM detector using multilayer graphene (MLG) as photosensitive material. In principle, with new modulation and readout scheme, we can potentially increase the operation speed to 50.14 kHz with a PEM that operates at a state-of-the-art speed. Our work paves the way toward high-speed operation of direct OAM detection devices based on OPGE effect and pushes such technology to a more practical stage for focal plane array applications. Copyright © 2025, The Authors. All rights reserved.

关键词： Photodetectors

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Study on influences of TiN capping layer on time-dependent dielectric breakdown characteristic of ultra-thin EOT high-k metal gate NMOSFET with kMC TDDB simulations

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Chinese Physics B 2016年第8期25卷 347-351页

作者：徐昊杨红罗维春徐烨峰王艳蓉唐波王文武祁路伟李俊峰闫江朱慧珑赵超陈大鹏叶甜春 Key Laboratory of Microelectronics Devices & Integrated Technology Institute of Micro ElectronicsChinese Academy of Sciences

The thickness effect of the TiN capping layer on the time dependent dielectric breakdown（TDDB） characteristic of ultra-thin EOT high-k metal gate NMOSFET is investigated in this *** on experimental results,it is found that the device with a thicker TiN layer has a more promising reliability characteristic than that with a thinner TiN *** the charge pumping measurement and secondary ion mass spectroscopy（SIMS） analysis,it is indicated that the sample with the thicker TiN layer introduces more Cl passivation at the IL/Si interface and exhibits a lower interface trap *** addition,the influences of interface and bulk trap density ratio Nit/Not are studied by TDDB simulations through combining percolation theory and the kinetic Monte Carlo（kMC） *** lifetime reduction and Weibull slope lowering are explained by interface trap effects for TiN capping layers with different thicknesses.

关键词： high-k metal gate TiN capping layer TDDB interface trap density

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Temperature- and voltage-dependent trap generation model in high-k metal gate MOS device with percolation simulation

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Chinese Physics B 2016年第8期25卷 352-356页

作者：徐昊杨红王艳蓉王文武罗维春祁路伟李俊峰赵超陈大鹏叶甜春 Key Laboratory of Microelectronics Devices & Integrated Technology Institute of Micro ElectronicsChinese Academy of Sciences

High-k metal gate stacks are being used to suppress the gate leakage due to tunneling for sub-45 nm technology *** reliability of thin dielectric films becomes a limitation to device manufacturing,especially to the breakdown *** this work,a breakdown simulator based on a percolation model and the kinetic Monte Carlo method is set up,and the intrinsic relation between time to breakdown and trap generation rate R is studied by TDDB *** is found that all degradation factors,such as trap generation rate time exponent m,Weibull slope β and percolation factor s,each could be expressed as a function of trap density time exponent α.Based on the percolation relation and power law lifetime projection,a temperature related trap generation model is *** validity of this model is confirmed by comparing with experiment *** other device and material conditions,the percolation relation provides a new way to study the relationship between trap generation and lifetime projection.

关键词： high-k metal gate TDDB percolation theory kinetic Monte Carlo trap generation model

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Regulating Water Molecules via Bioinspired Covalent Organic Framework Membranes for Zn Metal Anodes

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Angewandte Chemie - International Edition 2025年第14期64卷 e202424184页

作者： Zhang, Sida Chen, Jiashu Chen, Weigen Su, Yiwen Gou, Qianzhi Yuan, Ruduan Wang, Ziyi Wang, Kaixin Zhang, Wentao Hu, Xiqian Zhang, Zhixian Wang, Pinyi Wan, Fu Liu, Jie Li, Beibei Wang, Yifei Zheng, Guangping Li, Meng Sun, Jingyu State Key Laboratory of Power Transmission Equipment Technology School of Electrical Engineering National Innovation Center for Industry-Education Integration of Energy Storage Chongqing University Chongqing400044 China Soochow Institute for Energy and Materials Innovation Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province Soochow University Suzhou215006 China Department of Mechanical Engineering Hong Kong Polytechnic University Hung Hom Kowloon999077 Hong Kong MOE Key Laboratory of Low-grade Energy Utilization Technologies and Systems CQU-NUS Renewable Energy Materials & Devices Joint Laboratory School of Energy and Power Engineering National Innovation Center for Industry-Education Integration of Energy Storage Chongqing University Chongqing400044 China School of Building Services Science and Engineering Xi'an University of Architecture and Technology Xi'an710055 China School of Electrical and Electronic Engineering Chongqing University of Technology Chongqing400054 China Hunan University Changsha410082 China College of Environmental Science and Engineering National Engineering Laboratory for Advanced Municipal Wastewater Treatment and Reuse Technology Beijing University of Technology Beijing100124 China

The Zn metal anode in aqueous zinc-ion batteries (AZIBs) faces daunting challenges including undesired water-induced parasitic reactions and sluggish ion migration kinetics. Herein, we develop three-dimensional covalent organic framework (COF) membranes with bioinspired ion channels toward stabilized Zn anodes. These COFs, featured by zincophilic pyridine-N sites, enable effective regulation of water molecules at the anode-electrolyte interphase. Systematic experimental analysis and theoretical simulations reveal the optimized COF-320N membrane functions as ion pumps, accordingly facilitating Zn2+ transport and inhibiting direct contact between Zn anode and free water molecules. Consequently, the bio-inspired strategy achieves improved Zn2+ transference number (0.61), rapid de-solvation kinetics, and suppressed hydrogen evolution. The assembled Zn||MnO2 pouch cell integrated with COF-320N membrane exhibits favorable electrochemical performances. Such a bioinspired concept for optimizing Zn anodes opens new pathways in developing advanced energy storage devices. © 2025 Wiley-VCH GmbH.

关键词： Manganese oxide

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