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检索条件"机构=Key Laboratory of Microelectronics Devices and Integration Technology"
1334 条 记 录,以下是111-120 订阅
排序:
Characterization of HfSiAlON/MoAlN PMOSFETs Fabricated by Using a Novel Gate-Last Process
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Chinese Physics Letters 2013年 第8期30卷 156-159页
作者: XU Gao-Bo XU Qiu-Xia YIN Hua-Xiang ZHOU Hua-Jie YANG Tao NIU Jie-Bin HE Xiao-Bin MENG Ling-Kuan YU Jia-Han LI Jun-Feng YAN Jiang ZHAO Chao CHEN Da-Peng Key Laboratory of Microelectronics Devices&Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029
We fabricate p-channel metal-oxide-semiconductor-field-effect-transistors(PMOSFETs)with a HfSiAlON/MoAlN gate stack using a novel and practical gate-last *** the process,SiO_(2)/poly-Si is adopted as the dummy gate st... 详细信息
来源: 评论
Microwave annealing effects on ZnO films deposited by atomic layer deposition
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Journal of Semiconductors 2014年 第11期35卷 1-4页
作者: 赵士瑞 董亚斌 于明岩 郭晓龙 徐昕伟 景玉鹏 夏洋 Key Laboratory of Microelectronics Devices & Integrated Technology Institute of MicroelectronicsUniversity of Chinese Academy of Sciences
Zinc oxide thin films deposited on glass substrate at 150℃ by atomic layer deposition were annealed by the microwave method at temperatures below 500 ℃. The microwave annealing effects on the structural and luminesc... 详细信息
来源: 评论
Operation methods of resistive random access memory
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Science China(Technological Sciences) 2014年 第12期57卷 2295-2304页
作者: WANG Guo Ming LONG Shi Bing ZHANG Mei Yun LI Yang XU Xiao Xin LIU Hong Tao WANG Ming SUN Peng Xiao SUN Hai Tao LIU Qi Lü Hang Bing YANG Bao He LIU Ming Tianjin Key Laboratory of Film Electronic and Communication Devices Tianjin University of Technology Lab of Nanofabrication and Novel Device Integration Institute of Microelectronics Chinese Academy of Sciences
In this paper, different electrical measurement and operation methods of resistive random access memory (RRAM) have been summarized, including voltage sweeping mode (VSM), current sweeping mode (CSM), co lstant ... 详细信息
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100-nm T-gate InAlAs/InGaAs InP-based HEMTs with f_T = 249 GHz and f_(max) = 415 GHz
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Chinese Physics B 2014年 第3期23卷 613-618页
作者: 汪丽丹 丁芃 苏永波 陈娇 张毕禅 金智 Microware Devices and Integrated Circuits Department Key Laboratory of Microelectronics Device and Integrated TechnologyInstitute of Microelectronics Chinese Academy of Sciences
InA1As/InGaAs high electron mobility transistors (HEMTs) on an InP substrate with well-balanced cutoff frequency fT and maximum oscillation frequency frnax are reported. An InA1As/InGaAs HEMT with 100-nm gate length... 详细信息
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Enhanced vibration energy harvesting of magnetically coupled piezoelectric cantilever beam with double-point stopper
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Mechanical Systems and Signal Processing 2025年 233卷
作者: Wang, Lu Zhang, Ying Liu, Shuai Zhao, Lin-Chuan Hu, Kai-Ming Li, Zhikang Zhao, Libo Zhang, Wen-Ming Meng, Guang State Key Laboratory for Manufacturing Systems Engineering State Industry-Education Integration Center for Medical Innovations International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technologies Shaanxi Innovation Center for Special Sensing and Testing Technology in Extreme Environments Shaanxi Provincial University Engineering Research Center for Micro/Nano Acoustic Devices and Intelligent Systems Xi'an Jiaotong University Xi'an710049 China School of Instrument Science and Technology Xi'an Jiaotong University Xi'an710049 China State Key Laboratory of Mechanical System and Vibration School of Mechanical Engineering Shanghai Jiao Tong University 800 Dongchuan Road Shanghai200240 China
Piezoelectric fragility is concerned with low broadband and large amplitude vibration for energy harvesting in human motion, vehicles, wave energy, etc. The design of the stopper is helpful for the protection and broa... 详细信息
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Achieving 2.1% Effciency in Alpha-Voltaic Cell Based on Silicon Carbide Transducer
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Energy & Environmental Materials 2025年 第2期 309-315页
作者: Runlong Gao Wuying Ma Pengying Wan Ao Liu Xiao Ouyang Xue Du Qiantao Lei Qi Deng Linyue Liu Xiaoping Ouyang Sino-French Institute of Nuclear Engineering and Technology Sun Yat-Sen University National Key Laboratory of Intense Pulsed Radiation Simulation and Effect Northwest Institute of Nuclear Technology School of Microelectronics Xi'an Jiaotong University State Key Laboratory of Wide-Bandgap Semiconductor Power Electronic Devices Nanjing Electronic Devices Institute Key Laboratory of Beam Technology of Ministry of Education School of Physics and Astronomy Beijing Normal University Department of Engineering Physics Tsinghua University Shanghai Institute of Applied Physics Chinese Academy of Sciences
Alpha-voltaic cell is a type of micro nuclear battery that provides several decades of reliable power in the nano watt to microwatt range,supplying for special applications where traditional chemical batteries or sola...
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High-speed readout for direct light orbital angular momentum photodetector via photoelastic modulation
arXiv
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arXiv 2025年
作者: Yang, Dehong Xu, Chang Lai, Jiawei Fan, Zipu Liang, Delang Wang, Shiyu Cheng, Jinluo Sun, Dong International Center for Quantum Materials School of Physics Peking University Beijing China Ministry of Education Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter Shaanxi Province Key Laboratory of Quantum Information and Quantum Optoelectronic Devices School of Physics Xi'an Jiaotong University Xi’an China Key Laboratory for Micro-Nano Physics and Technology of Hunan Province Hunan Institute of Optoelectronic Integration College of Materials Science and Engineering Hunan University Changsha China GPL Photonics Laboratory State Key Laboratory of Luminescence Science and Technology Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences Changchun China Collaborative Innovation Center of Quantum Matter Beijing China Frontiers Science Center for Nano-optoelectronics School of Physics Beijing China
Recent progress in direct photodetection of light orbital angular momentum (OAM) based on the orbital photogalvanic effect (OPGE) provides an effective way for on-chip direct electric readout of orbital angular moment... 详细信息
来源: 评论
Study on influences of TiN capping layer on time-dependent dielectric breakdown characteristic of ultra-thin EOT high-k metal gate NMOSFET with kMC TDDB simulations
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Chinese Physics B 2016年 第8期25卷 347-351页
作者: 徐昊 杨红 罗维春 徐烨峰 王艳蓉 唐波 王文武 祁路伟 李俊峰 闫江 朱慧珑 赵超 陈大鹏 叶甜春 Key Laboratory of Microelectronics Devices & Integrated Technology Institute of Micro ElectronicsChinese Academy of Sciences
The thickness effect of the TiN capping layer on the time dependent dielectric breakdown(TDDB) characteristic of ultra-thin EOT high-k metal gate NMOSFET is investigated in this *** on experimental results,it is fou... 详细信息
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Temperature- and voltage-dependent trap generation model in high-k metal gate MOS device with percolation simulation
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Chinese Physics B 2016年 第8期25卷 352-356页
作者: 徐昊 杨红 王艳蓉 王文武 罗维春 祁路伟 李俊峰 赵超 陈大鹏 叶甜春 Key Laboratory of Microelectronics Devices & Integrated Technology Institute of Micro ElectronicsChinese Academy of Sciences
High-k metal gate stacks are being used to suppress the gate leakage due to tunneling for sub-45 nm technology *** reliability of thin dielectric films becomes a limitation to device manufacturing,especially to the br... 详细信息
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Regulating Water Molecules via Bioinspired Covalent Organic Framework Membranes for Zn Metal Anodes
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Angewandte Chemie - International Edition 2025年 第14期64卷 e202424184页
作者: Zhang, Sida Chen, Jiashu Chen, Weigen Su, Yiwen Gou, Qianzhi Yuan, Ruduan Wang, Ziyi Wang, Kaixin Zhang, Wentao Hu, Xiqian Zhang, Zhixian Wang, Pinyi Wan, Fu Liu, Jie Li, Beibei Wang, Yifei Zheng, Guangping Li, Meng Sun, Jingyu State Key Laboratory of Power Transmission Equipment Technology School of Electrical Engineering National Innovation Center for Industry-Education Integration of Energy Storage Chongqing University Chongqing400044 China Soochow Institute for Energy and Materials Innovation Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province Soochow University Suzhou215006 China Department of Mechanical Engineering Hong Kong Polytechnic University Hung Hom Kowloon999077 Hong Kong MOE Key Laboratory of Low-grade Energy Utilization Technologies and Systems CQU-NUS Renewable Energy Materials & Devices Joint Laboratory School of Energy and Power Engineering National Innovation Center for Industry-Education Integration of Energy Storage Chongqing University Chongqing400044 China School of Building Services Science and Engineering Xi'an University of Architecture and Technology Xi'an710055 China School of Electrical and Electronic Engineering Chongqing University of Technology Chongqing400054 China Hunan University Changsha410082 China College of Environmental Science and Engineering National Engineering Laboratory for Advanced Municipal Wastewater Treatment and Reuse Technology Beijing University of Technology Beijing100124 China
The Zn metal anode in aqueous zinc-ion batteries (AZIBs) faces daunting challenges including undesired water-induced parasitic reactions and sluggish ion migration kinetics. Herein, we develop three-dimensional covale... 详细信息
来源: 评论