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Quantum control for time-dependent noise by inverse geometric optimization

Science China(Physics,Mechanics & Astronomy) 2024年第9期67卷 51-57页

作者： Xiaodong Yang Yingcheng Li Ran Liu Xinfang Nie Tao Xin Dawei Lu Jun Li Institute of Quantum Precision Measurement State Key Laboratory of Radio Frequency Heterogeneous IntegrationCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen 518060China State Key Laboratory of Surface Physics Department of PhysicsCenter for Field Theory and Particle Physicsand Institute for Nanoelectronic Devices and Quantum ComputingFudan UniversityShanghai 200433China Shenzhen Institute for Quantum Science and Engineering and Department of Physics Southern University of Science and TechnologyShenzhen 518055China Guangdong Provincial Key Laboratory of Quantum Science and Engineering Southern University of Science and TechnologyShenzhen 518055China Quantum Science Center of Guangdong-Hong Kong-Macao Greater Bay Area(Guangdong) Shenzhen 518045China

Quantum systems are exceedingly difficult to engineer because they are sensitive to various types of *** particular,timedependent noises are frequently encountered in experiments but how to overcome them remains a challenging *** this work,we propose a flexible robust control technique to resist time-dependent noises based on inverse geometric optimization working in the filter-function *** basic idea is to parameterize the control filter function geometrically and minimize its overlap with the noise spectral *** then effectively reduces the noise susceptibility of the controlled system *** show that the proposed method can produce high-quality robust pulses for realizing desired quantum evolutions under realistic noise ***,we demonstrate this method in examples including dynamical decoupling and quantum sensing protocols to enhance their performances.

关键词： time-dependent noise robust control quantum gates and states dynamical decoupling quantum sensing

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CMOS-compatible wafer-scale Si subulate array for superb switching uniformity of RRAM with localized nanofilaments

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Science China Materials 2022年第6期65卷 1623-1630页

作者： Ying Zhang Xiaolong Zhao Xiaolan Ma Yu Liu Xuanze Zhou Meiyun Zhang Guangwei Xu Shibing Long Key Laboratory of Microelectronic Devices&Integration Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China School of Microelectronics University of Science and Technology of ChinaHefei 230026China University of Chinese Academy of Sciences Beijing 100049China

Resistive switching random access memory(RRAM)is one of the most promising candidates with highdensity three-dimensional integration characteristics for nextgeneration nonvolatile memory ***,the poor uniformity issue caused by the stochastic property of the conductive filament(CF)impedes the large-scale manufacture of RRAM *** array has been introduced into the RRAM to minimize the CF randomness,but the methods are cumbersome,expensive,or resolution-limited for large-scale *** this work,Si subulate array(SSA)substrates with different curvature radii prepared by a wafer-scale and nanoscale-controllable method are introduced for RRAM *** SSA structure,which induces a quasi-single CF or a few CFs formed in the tip region(TR)of the device as evidenced by the high-resolution transmission electron microscopy and energy dispersive spectroscopy characterization,dramatically improves the cycle-to-cycle and device-to-device *** the curvature radius of the TR significantly improves the device performance,including switching voltages,high/low resistance states,and retention *** improved uniformity can be attributed to the enhanced local electric field in the *** proposed SSA provides a low-cost,uniform,CMOS-compatible,and nanoscale-controllable optimization strategy for the largescale integration of highly uniform RRAM devices.

关键词： resistive switching memristor RRAM Si subulate array enhancement of electric field

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A High-Efficiency Double Step Down Converter with Dual-Mode Control and Seamless Mode Transition in A Wide Load Current Range 56

A High-Efficiency Double Step Down Converter with Dual-Mode ...

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56th IEEE International Symposium on Circuits and Systems, ISCAS 2023

作者： Xue, Weidong Zhang, Yiseng Lai, Rongxing Zhao, Yutong Fang, Jian Ren, Junyan School of Microelectronics Fudan University Shanghai China State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu China

This paper presents a high-efficiency double step-down power converter with a dual-mode control scheme in a wide load range. A voltage-mode control scheme with an instant Tzcd and \text{Tsw}/2 mirror is employed in discontinuous conduction mode (DCM). It avoids negative inductor current in DCM and improves efficiency in light load with minimized voltage ripples. Meanwhile, a current-mode control scheme is used in continuous conduction mode (CCM), sharing a single feedback controller and \text{Tsw}/2 mirror controller with DCM. The inherent time difference of detection cycles between DCM and CCM is used to realize a seamless dual-mode transition. The converter is designed with a conversion for 12.0 V to 1.0 V at 1-MHz switching frequency, based on a 0.15-{\mu m} high-voltage BCD process. The simulation shows that a power efficiency of 79.8% is achieved with a dual-mode control under a 200-mA current load, which is the 7.2% higher than the counterpart without dual-mode control. Moreover, the power efficiency is above 76.5% even at a 50mA load with an improvement of 14.1%. © 2023 IEEE.

关键词： Mirrors

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Kilowatt level high-power thulium doped fiber laser

Kilowatt level high-power thulium doped fiber laser

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2024 Advanced Fiber Laser Conference, AFL 2024

作者： Zhang, Xiao Dong, Fanlong Yan, Peiguang Wang, Jinzhang Lue, Qitao Guo, Chunyu Ruan, Shuangchen Shenzhen Key Laboratory of Laser Engineering Guangdong Provincial Key Laboratory of Micro/Nano Optomechatronics Engineering Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province State Key Laboratory of Radio Frequency Heterogeneous Integration College of Physics and Optoelectronic Engineering Shenzhen University Shenzhen518060 China Key Laboratory of Advanced Optical Precision Manufacturing Technology of Guangdong Higher Education Institutes Shenzhen Technology University Shenzhen518118 China Han’s Laser Technology Industry Group Co. Ltd. Shenzhen518057 China

ISBN: (数字)9781510688889

ISBN: (纸本)9781510688872

In this paper, a high power Tm3+-doped fiber laser (TDFL) based on a monolithic master oscillator power amplifier (MOPA) system with the center wavelength is 1940 nm is *** maximum laser power was measured to be 909 W with a slope efficiency of 50.1% at the 793 nm pump power of 1816 W. Power stability of the laser output over 60 min is measured to be ~0.14% .Output power is pump-limited without the onset of parasitic oscillation or amplified spontaneous emission (ASE) even at the maximum power, showing further power scaling should be possible with increase the pump power. © 2025 SPIE.

关键词： Optical pumping

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A Systematic Characterization Method for Time-resolved Stability and Reliability Issues on Lateral GaN Power devices 35

A Systematic Characterization Method for Time-resolved Stabi...

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35th International Symposium on Power Semiconductor devices and ICs, ISPSD 2023

作者： Huang, Yifei Jiang, Qimeng Huang, Sen Liu, Xinyu University of Chinese Academy of Sciences Beijing100049 China Institute of Microelectronics The Chinese Academy of Sciences Key Laboratory of Microelectronic Devices & Integrated Technology Beijing100029 China

ISBN: (纸本)9798350396829

In this work, three testing modes, including continuous hard switching testing (HSW), high-voltage DC stress testing (DC) and recovery testing (RE), are implemented to characterize time-resolved dynamic RON behaviors of GaN HEMT devices, based on the inductive-load evaluation platform. The proposed stressing pattern (DC-HSW-DC-RE) enables the separation of de-stress- and transient-stress-induced dynamic RON. Based on the stressing pattern, a novel physical-based characterization method is proposed to identify the irreversible degradation of dynamic RON, featuring excellent sensitivity when compared with the traditional methods. In addition, lifetime acceleration experiments are carried out, and the irreversible RON degradation exhibits a strong dependence on voltage and current, but a weak dependence on temperature. © 2023 IEEE.

关键词： Gallium nitride

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Controllable Growth of Conjugated Polymer Monolayer: from Field-Effect Transistors to Integrated Circuits

Controllable Growth of Conjugated Polymer Monolayer: from Fi...

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The 2023 International Conference on Display technology, (ICDT 2023)

作者： Ding, Chenming Lu, Congyan Li, Mengmeng Li, Ling Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China University of Chinese Academy of Sciences Beijing100049 China

The charge transport of planar organic field-effect transistors (FETs) occurs in the nearest molecular layer to the dielectric layer. Therefore, organic monolayer FETs with two-dimensional transport properties have been widely studied, and is considered to be promising for applications in bottom-up integrated circuits. Based on the semiconducting polymer PffBT4T-2DT, we fabricate the high-performance monolayer FETs and unipolar inverters. Resultant polymer monolayer FETs exhibited excellent and uniform performance with a 107 on/off current ratio and ultra-low leakage current with a magnitude of 10-12 A. More importantly, the corresponding intrinsic gain of 1000 V/V is achieved, which surpass Si MOSFET. Zero-VGS inverters based on these polymer monolayer FETs exhibit steep level transitions with a voltage gain of 70 V/V, which is among the record for inverters based on organic monolayer. © 2023, John Wiley and Sons Inc. All rights reserved.

关键词： Timing circuits

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Simultaneous integration of Fe clusters and NiFe dual single atoms in nitrogen-doped carbon for oxygen reduction reaction

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Nano Research 2024年第4期17卷 2291-2297页

作者： Jirong Bai Yuebin Lian Yaoyao Deng Mei Xiang Peng Xu Quanfa Zhou Yawen Tang Yaqiong Su Research Center of Secondary Resources and Environment School of Chemical Engineering and MaterialsChangzhou Institute of TechnologyChangzhou 213022China Jiangsu Key Laboratory of New Power Batteries School of Chemistry and Materials ScienceNanjing Normal UniversityNanjing 210023China School of Chemistry Engineering Research Center of Energy Storage Materials and Devices of Ministry of EducationNational Innovation Platform(Center)for Industry-Education Integration of Energy Storage TechnologyXi’an Jiaotong UniversityXi’an 710049China

Atomically-dispersed iron-based electrocatalysts are promising substitutes for noble metal electrocatalysts because of excellent performance in oxygen reduction reaction(ORR).Rationally modulating the local coordination environment of the Fe site and optimizing the binding energy of oxygen reduction intermediates are effective strategies to optimize ORR ***,we report a new method in which Ni is introduced to construct NiFe dual single atoms and iron nanoclusters loaded on the nitrogen-doped carbon with a highly porous *** design plays a synergistic role of dual single atoms and clusters,optimizes the 3d orbital and Fermi level of Fe,breaks the symmetrical structure of Fe-N_(4),and effectively improves the adsorption/desorption behavior of the oxygen-containing *** tests show FeNCs/NiFeSAs-NC has an excellent intrinsic *** calculations show the oxygen-containing species on the Ni active site will move to the middle of NiFe(bridge site connection)after optimization and that the key step is OH desorption,with a reaction energy of 0.27 *** electron exchange between NiFe-N6 and Fe-cluster is very strong,further indicating the introduction of Ni species and Fe clusters has a regulatory effect on the electronic structure of Fe-N_(4).

关键词： NiFe dual single atoms Fe clusters OH*adsorption energy oxygen reduction reaction

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Coupling of a hole double quantum dot in planar germanium to a microwave cavity

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Physical Review Applied 2024年第2期22卷 024054页

作者： Yuan Kang Zong-Hu Li Zhen-Zhen Kong Fang-Ge Li Tian-Yue Hao Ze-Cheng Wei Song-Yan Deng Bao-Chuan Wang Hai-Ou Li Gui-Lei Wang Guang-Can Guo Gang Cao Guo-Ping Guo CAS Key Laboratory of Quantum Information CAS Center for Excellence in Quantum Information and Quantum Physics Key Laboratory of Microelectronics Devices & Integrated Technology Institute of Microelectronics Hefei National Laboratory Beijing Superstring Academy of Memory Technology Beijing 100176 China Hefei Anhui 230088 China

In recent years, notable progress has been made in the study of hole qubits in planar germanium, and circuit quantum electrodynamics (circuit QED) has emerged as a promising approach for achieving long-range coupling and scaling up of qubits. Here, we demonstrate the coupling between holes in a planar germanium double quantum dot (DQD) and photons in a microwave cavity. Specifically, a real-time calibrated virtual gate method is developed to characterize this hybrid system, which in turn allows us to determine the typical parameters sequentially through a single-parameter fitting instead of conventional multiparameter fitting with additional uncertainty, giving a hole-photon coupling rate of g0/2π = 21.7 MHz. This work is a step toward further research on hole-photon interactions and long-range qubit coupling in planar germanium. The experimental method developed in this work contributes to a more accurate and efficient characterization of hybrid cavity-QED systems.

关键词： Circuit quantum electrodynamics Quantum information with hybrid systems Quantum information with solid state qubits Double quantum dots Elemental semiconductors Superconducting devices Cavity resonators Microwave techniques

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Design and fabrication of etchless lithium niobate photonic crystal nanobeam cavity for efficient photon manipulation 15

Design and fabrication of etchless lithium niobate photonic ...

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15th International Conference on Information Optics and Photonics, CIOP 2024

作者： Jiang, Zhi Yao, Danyang Gao, Yu Ran, Xu Wang, Jianguo Gan, Xuetao Liu, Yan Hao, Yue Han, Genquan State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology School of Microelectronics Faculty of integrated circuits Xidian University Xi’an710071 China Key Laboratory of Light Field Manipulation and Information Acquisition Ministry of Industry and Information Technology Shaanxi Key Laboratory of Optical Information Technology School of Physical Science and Technology Northwestern Polytechnical University Xi’an710129 China Hangzhou Institute of Technology Xidian University Hangzhou311200 China

ISBN: (数字)9781510686175

ISBN: (纸本)9781510686168

Recently, a novel approach that uses low-refractive-index polymers as loading materials coated on lithium niobate (LN) can dramatically simplify fabrication challenges for etching LN. On this platform, various devices operating in the transverse magnetic (TM) polarized state based on optical bound states in the continuum (BIC) have been demonstrated. However, in this configuration, the propagation loss of TM mode exhibits sensitivity to waveguide width, which limits design flexibility in waveguide structures. To this end, we designed transverse magnetic electric (TE) polarized photonic crystal structures with the same fabrication process using a y-cut LN on insulator (LNOI) substrate. The fabricated photonic crystal nanobeam cavity (PCNBC) achieves a Q factor over one order of magnitude higher than any previously reported PCNBCs on the etchless LNOI platform and retains a high transmission. To verify the strong photon manipulation ability, additional experiments such as thermo-optic tuning and optical bistability generation have been made. These results demonstrate the potential of our devices for efficient on-chip photon manipulation. © 2024 SPIE.

关键词： Optical bistability

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A DC-DC converter utilizing \beta-\text{Ga}_{2}O}_{3 Schottky barrier diode 5

A DC-DC converter utilizing \beta-\text{Ga}_{2}O}_{3 Schottk...

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5th IEEE Electron devices technology and Manufacturing Conference, EDTM 2021

作者： Guo, Wei Jian, Guangzhong Wu, Feihong Zhou, Kai Xu, Guangwei Zhou, Xuanze He, Qiming Zhao, Xiaolong Long, Shibing School of Microelectronics University of Science and Technology of China Hefei230026 China Key Laboratory of Microelectronics Devices and Integration Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing100029 China

ISBN: (纸本)9781728181769

The \beta-\text{Ga}_{2}O}_{3 Schottky barrier diode (SBD) is fabricated and actualized a breakdown voltage of 472 V. A SPICE model for \beta-\text{Ga}_{2}O}_{3 Sbd is derived from experimental results and applied to DC-DC converter circuit simulation. Then the \beta-\text{Ga}_{2}O}_{3 SBD is implemented in a DC-DC converter circuit and acquired the conversion efficiency of 94.8%, indicating the great potential of Ga2O3-based devices and circuits. © 2021 IEEE.

关键词： Schottky barrier diodes

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