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检索条件"机构=Key Laboratory of Microelectronics Devices and Integration Technology"
1327 条 记 录,以下是111-120 订阅
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Quantum control for time-dependent noise by inverse geometric optimization
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Science China(Physics,Mechanics & Astronomy) 2024年 第9期67卷 51-57页
作者: Xiaodong Yang Yingcheng Li Ran Liu Xinfang Nie Tao Xin Dawei Lu Jun Li Institute of Quantum Precision Measurement State Key Laboratory of Radio Frequency Heterogeneous IntegrationCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen 518060China State Key Laboratory of Surface Physics Department of PhysicsCenter for Field Theory and Particle Physicsand Institute for Nanoelectronic Devices and Quantum ComputingFudan UniversityShanghai 200433China Shenzhen Institute for Quantum Science and Engineering and Department of Physics Southern University of Science and TechnologyShenzhen 518055China Guangdong Provincial Key Laboratory of Quantum Science and Engineering Southern University of Science and TechnologyShenzhen 518055China Quantum Science Center of Guangdong-Hong Kong-Macao Greater Bay Area(Guangdong) Shenzhen 518045China
Quantum systems are exceedingly difficult to engineer because they are sensitive to various types of *** particular,timedependent noises are frequently encountered in experiments but how to overcome them remains a cha... 详细信息
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CMOS-compatible wafer-scale Si subulate array for superb switching uniformity of RRAM with localized nanofilaments
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Science China Materials 2022年 第6期65卷 1623-1630页
作者: Ying Zhang Xiaolong Zhao Xiaolan Ma Yu Liu Xuanze Zhou Meiyun Zhang Guangwei Xu Shibing Long Key Laboratory of Microelectronic Devices&Integration Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China School of Microelectronics University of Science and Technology of ChinaHefei 230026China University of Chinese Academy of Sciences Beijing 100049China
Resistive switching random access memory(RRAM)is one of the most promising candidates with highdensity three-dimensional integration characteristics for nextgeneration nonvolatile memory ***,the poor uniformity issue ... 详细信息
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A High-Efficiency Double Step Down Converter with Dual-Mode Control and Seamless Mode Transition in A Wide Load Current Range  56
A High-Efficiency Double Step Down Converter with Dual-Mode ...
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56th IEEE International Symposium on Circuits and Systems, ISCAS 2023
作者: Xue, Weidong Zhang, Yiseng Lai, Rongxing Zhao, Yutong Fang, Jian Ren, Junyan School of Microelectronics Fudan University Shanghai China State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu China
This paper presents a high-efficiency double step-down power converter with a dual-mode control scheme in a wide load range. A voltage-mode control scheme with an instant Tzcd and \text{Tsw}/2 mirror is employed in di... 详细信息
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Kilowatt level high-power thulium doped fiber laser
Kilowatt level high-power thulium doped fiber laser
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2024 Advanced Fiber Laser Conference, AFL 2024
作者: Zhang, Xiao Dong, Fanlong Yan, Peiguang Wang, Jinzhang Lue, Qitao Guo, Chunyu Ruan, Shuangchen Shenzhen Key Laboratory of Laser Engineering Guangdong Provincial Key Laboratory of Micro/Nano Optomechatronics Engineering Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province State Key Laboratory of Radio Frequency Heterogeneous Integration College of Physics and Optoelectronic Engineering Shenzhen University Shenzhen518060 China Key Laboratory of Advanced Optical Precision Manufacturing Technology of Guangdong Higher Education Institutes Shenzhen Technology University Shenzhen518118 China Han’s Laser Technology Industry Group Co. Ltd. Shenzhen518057 China
In this paper, a high power Tm3+-doped fiber laser (TDFL) based on a monolithic master oscillator power amplifier (MOPA) system with the center wavelength is 1940 nm is *** maximum laser power was measured to be 909 W... 详细信息
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A Systematic Characterization Method for Time-resolved Stability and Reliability Issues on Lateral GaN Power devices  35
A Systematic Characterization Method for Time-resolved Stabi...
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35th International Symposium on Power Semiconductor devices and ICs, ISPSD 2023
作者: Huang, Yifei Jiang, Qimeng Huang, Sen Liu, Xinyu University of Chinese Academy of Sciences Beijing100049 China Institute of Microelectronics The Chinese Academy of Sciences Key Laboratory of Microelectronic Devices & Integrated Technology Beijing100029 China
In this work, three testing modes, including continuous hard switching testing (HSW), high-voltage DC stress testing (DC) and recovery testing (RE), are implemented to characterize time-resolved dynamic RON behaviors ... 详细信息
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Controllable Growth of Conjugated Polymer Monolayer: from Field-Effect Transistors to Integrated Circuits
Controllable Growth of Conjugated Polymer Monolayer: from Fi...
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The 2023 International Conference on Display technology, (ICDT 2023)
作者: Ding, Chenming Lu, Congyan Li, Mengmeng Li, Ling Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China University of Chinese Academy of Sciences Beijing100049 China
The charge transport of planar organic field-effect transistors (FETs) occurs in the nearest molecular layer to the dielectric layer. Therefore, organic monolayer FETs with two-dimensional transport properties have be... 详细信息
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Simultaneous integration of Fe clusters and NiFe dual single atoms in nitrogen-doped carbon for oxygen reduction reaction
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Nano Research 2024年 第4期17卷 2291-2297页
作者: Jirong Bai Yuebin Lian Yaoyao Deng Mei Xiang Peng Xu Quanfa Zhou Yawen Tang Yaqiong Su Research Center of Secondary Resources and Environment School of Chemical Engineering and MaterialsChangzhou Institute of TechnologyChangzhou 213022China Jiangsu Key Laboratory of New Power Batteries School of Chemistry and Materials ScienceNanjing Normal UniversityNanjing 210023China School of Chemistry Engineering Research Center of Energy Storage Materials and Devices of Ministry of EducationNational Innovation Platform(Center)for Industry-Education Integration of Energy Storage TechnologyXi’an Jiaotong UniversityXi’an 710049China
Atomically-dispersed iron-based electrocatalysts are promising substitutes for noble metal electrocatalysts because of excellent performance in oxygen reduction reaction(ORR).Rationally modulating the local coordinati... 详细信息
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Coupling of a hole double quantum dot in planar germanium to a microwave cavity
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Physical Review Applied 2024年 第2期22卷 024054页
作者: Yuan Kang Zong-Hu Li Zhen-Zhen Kong Fang-Ge Li Tian-Yue Hao Ze-Cheng Wei Song-Yan Deng Bao-Chuan Wang Hai-Ou Li Gui-Lei Wang Guang-Can Guo Gang Cao Guo-Ping Guo CAS Key Laboratory of Quantum Information CAS Center for Excellence in Quantum Information and Quantum Physics Key Laboratory of Microelectronics Devices & Integrated Technology Institute of Microelectronics Hefei National Laboratory Beijing Superstring Academy of Memory Technology Beijing 100176 China Hefei Anhui 230088 China
In recent years, notable progress has been made in the study of hole qubits in planar germanium, and circuit quantum electrodynamics (circuit QED) has emerged as a promising approach for achieving long-range coupling ... 详细信息
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Design and fabrication of etchless lithium niobate photonic crystal nanobeam cavity for efficient photon manipulation  15
Design and fabrication of etchless lithium niobate photonic ...
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15th International Conference on Information Optics and Photonics, CIOP 2024
作者: Jiang, Zhi Yao, Danyang Gao, Yu Ran, Xu Wang, Jianguo Gan, Xuetao Liu, Yan Hao, Yue Han, Genquan State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology School of Microelectronics Faculty of integrated circuits Xidian University Xi’an710071 China Key Laboratory of Light Field Manipulation and Information Acquisition Ministry of Industry and Information Technology Shaanxi Key Laboratory of Optical Information Technology School of Physical Science and Technology Northwestern Polytechnical University Xi’an710129 China Hangzhou Institute of Technology Xidian University Hangzhou311200 China
Recently, a novel approach that uses low-refractive-index polymers as loading materials coated on lithium niobate (LN) can dramatically simplify fabrication challenges for etching LN. On this platform, various devices... 详细信息
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A DC-DC converter utilizing \beta-\text{Ga}_{2}O}_{3 Schottky barrier diode  5
A DC-DC converter utilizing \beta-\text{Ga}_{2}O}_{3 Schottk...
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5th IEEE Electron devices technology and Manufacturing Conference, EDTM 2021
作者: Guo, Wei Jian, Guangzhong Wu, Feihong Zhou, Kai Xu, Guangwei Zhou, Xuanze He, Qiming Zhao, Xiaolong Long, Shibing School of Microelectronics University of Science and Technology of China Hefei230026 China Key Laboratory of Microelectronics Devices and Integration Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing100029 China
The \beta-\text{Ga}_{2}O}_{3 Schottky barrier diode (SBD) is fabricated and actualized a breakdown voltage of 472 V. A SPICE model for \beta-\text{Ga}_{2}O}_{3 Sbd is derived from experimental results and applied to D... 详细信息
来源: 评论