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2012 MRS Spring Meeting

作者： Ma, Xiaolong Yin, Huaxiang Fu, Zuozhen Zhang, Haiqiang Zhang, Xu Yan, Jiang Zhao, Chao Chen, Dapeng Ye, Tianchun Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences 100029 Beijing China Key Laboratory of Beam Technology and Material Modification Ministry of Education Beijing Normal University 1000875 Beijing China

ISBN: (纸本)9781627482363

Diamond-like carbon (DLC) films as a new strain-capping material with compressive stress up to 12GPa for strained silicon technology were fabricated by filtered cathodic vacuum arc (FCVA) deposition system. The films' compositions and bonding structures were characterized using multi-wavelength Raman spectroscopy. The relationship between intrinsic stress and G peak dispersion of the films' Raman spectra were discussed. The results showed that the bias voltage applied to substrate during deposition determines films' sp3 bonding content and intrinsic stress. Process compatibility of the DLC films with standard CMOS technology was confirmed by using WDXRF measurement. Also diffusion behavior of carbon atoms in DLC films with copper and silicon was studied with a Cu(200nm)/DLC(40nm)/silicon multilayer structure annealed at 500°C in N2 atmosphere for an hour. At last, stress induced on silicon surface by DLC strips was characterized using surface sensitive UV-Raman spectroscopy. The results showed that DLC films with extremely high compressive stress have potential application in future CMOS strain engineering. © 2012 Materials Research Society.

关键词： Diamond like carbon films

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A 20-dB gain W-band InP DHBT power amplifier

A 20-dB gain W-band InP DHBT power amplifier

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2012 International Conference on Microwave and Millimeter Wave technology, ICMMT 2012

作者： Yao, Hongfei Cao, Yuxiong Ning, Xiaoxi Su, Yongbo Jin, Zhi Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China

ISBN: (纸本)9781467321839

A two-stage double heterojunction bipolar transistor (DHBT) power MMIC fabricated in InP technology is realized using coplanar waveguide structure. The output cell unit consists of four parallel cascode fingers. Sixteen fingers are at output stage from which the power is combined. Broad-band, low-loss matching networks lead to high gain and high combining efficiency. The chip area is 1.5×1.7 mm2. Measurements show that small signal gain is above 20 dB over 75.5 GHz ∼ 84.5 GHz frequency band. Simulated saturated power is 19.7 dBm @ 89 GHz and the actual output power is to be measured once the W-band power source arrive. © 2012 IEEE.

关键词： Power amplifiers

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Multi-spot focusing by using composite spiral zone plates

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Chinese Optics Letters 2012年第12期10卷 12-14页

作者：华一磊王子强李海亮高南杜宇禅 Key Laboratory of Nano-Fabrication and Novel Devices Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences

We present a flexible, simple, and cost effective approach for generating high-quality multiple focal spots in the far field using composite spiral zone plates （SZPs）, which serve as a synthesis of two SZPs with different topological charges. By changing the topological charges of the SZPs can obtain different types of nmltiple focal spots. The numerical solution, fabrication method, and experimental results are presented to prove the capabilities of this approach.

关键词： Optics Physics

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Analysis of temperature-dependent characteristics of a 4H-SiC metal-semiconductor-metal ultraviolet photodetector

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Chinese Science Bulletin 2012年第34期57卷 4427-4433页

作者： CHEN Bin YANG YinTang XIE XuanRong WANG Ning MA ZhenYang SONG Kun ZHANG XianJun Key Laboratory of Ministy of Education for Wide Band-Gap Semiconductor Materials and Devices School of MicroelectronicsXidian UniversityXi'an 710071China Xi'an Electronic Engineering Research Institute Xi'an 710100China No.771 Institute of Microelectronics Technology Xi'an 710054China

We investigate the temperature dependence of current-voltage and spectral response characteristics of a 4H-SiC metal-semicon-ductor-metal (MSM) ultraviolet photodetector in the temperature range from room temperature to 800 K with two-dimensional (2D) numerical simulator ISE-DESSIS. It is found that the dark current and photocurrent increase with the increasing temperature. For the range of 500-800 K, the dark current increases by nearly a factor 3.5 every 150 K larger than that of photocurrent, leading to a negative effect on photodetector current ratio (PDCR). Nevertheless, the PDCR is still greater than 200 even at 800 K, which exhibits the excellent thermal stability. In addition, the responsivity has an unsymmetrical trend. As temperature rises, it is clear that a remarkable red-shift of 12 nm occurs and overall responsivity is enhanced for longer wavelength. While the short-wave-length response remains relatively independent of temperature. The mechanism of indirect and direct band absorption transition is responsible for temperature-dependent spectrum distribution. These findings provide a significant insight on the design of the MSM detector operated at elevated temperature.

关键词：温度依赖性 4H-SiC 光谱响应特性光检测器半导体金属紫外线数值模拟器

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Dynamics of a novel bistable mechanism with mechanical-magnetic coupled structure

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Journal of Central South University 2012年第7期19卷 1853-1858页

作者：赵剑黄毓杨银堂高仁璟 College of Automotive Engineering Faculty of Vehicle Engineering and MechanicsDalian University of Technology State Key Laboratory of Structural Analysis for Industrial Equipment (Dalian University of Technology) Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of Ministry of Education (School of Microelectronics Xidian University)

Bistable mechanisms are very appealing in the design of valves,switches and actuators. By utilizing the nonlinear magnetic structure and elastic cantilevers,a novel bistable mechanism was designed. Based on the magnetic charge model and material mechanics theory,the nonlinear force during the snap-through procedure was calculated accurately,which is in accordance with that obtained by the experiments. In addition,the bistable characteristics including the threshold snapping force,the traveling range,and stable positions can be adjusted by changing the structure parameters and the relative distance among the magnets. The dynamic analysis shows that the bistable structure has a good frequency distinguishing capacity for mechanical shock pulses.

关键词： bistable mechanism coupled structure,nonlinearity dynamics

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Photoresists stripping using dielectric barrier glow discharge plasma system

Photoresists stripping using dielectric barrier glow dischar...

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IEEE International Conference on Plasma Science (ICOPS)

作者： Yuanwei Wu Shaoxia Jia Lingli Zhao Shouguo Wang Key Laboratory Microelectronic Devices and Integration Technology Institute of Microelectronics Chinese Academy of Sciences Beijing China

Summary form only given. A novel radio frequency (rf) dielectric barrier glow discharge plasma (DBGD) was utilized to evaluate the AZ9912 photoresist (PR) stripping effect. Argon (Ar) and oxygen (O2) were employed as working gases and ignited under atmospheric pressure. The discharge power efficiency was calculated based on the Lissajous plot and could reach to 80%. Compared to rf atmospheric glow discharges generated with bare electrodes, the DBGD remains stable and uniform over a larger current. Time dependant dielectric breakdown (TDDB) testing was conducted to evaluate the reliability of gate oxide on MOS capacitors. The surface of the etched PR was characterized using optical microscope and atomic force microscope (AFM). The results showed that there were no visible residues and plasma-induced ion bombardment damage left on the surface. Optical Emission Spectroscopy (OES) was also used to study the working species during the stripping process and the results showed that the possible useful active species belong to the atomic O and OH radical.

关键词： Atom optics Glow discharges Resists Dielectrics Plasmas microelectronics Radio frequency

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Diamond-Like Carbon Thin Films with Extremely High Compressive Stress (>8~12GPa) for Advanced CMOS Strain Engineering

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MRS Online Proceedings Library 2012年第1期1427卷 80-85页

作者： Ma, Xiaolong Yin, Huaxiang Fu, Zuozhen Zhang, Haiqiang Zhang, Xu Yan, Jiang Zhao, Chao Chen, Dapeng Ye, Tianchun Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing China Key Laboratory of Beam Technology and Material Modification of Ministry of Education Beijing Normal University Beijing China

Diamond-like carbon (DLC) films as a new strain-capping material with compressive stress up to 12GPa for strained silicon technology were fabricated by filtered cathodic vacuum arc (FCVA) deposition system. The films’ compositions and bonding structures were characterized using multi-wavelength Raman spectroscopy. The relationship between intrinsic stress and G peak dispersion of the films’ Raman spectra were discussed. The results showed that the bias voltage applied to substrate during deposition determines films’ sp3 bonding content and intrinsic stress. Process compatibility of the DLC films with standard CMOS technology was confirmed by using WDXRF measurement. Also diffusion behavior of carbon atoms in DLC films with copper and silicon was studied with a Cu(200nm)/DLC(40nm)/silicon multilayer structure annealed at 500℃ in N2 atmosphere for an hour. At last, stress induced on silicon surface by DLC strips was characterized using surface sensitive UV-Raman spectroscopy. The results showed that DLC films with extremely high compressive stress have potential application in future CMOS strain engineering.

关键词： Si stress/strain relationship Raman spectroscopy

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A 22W Ku band power amplifier based on internal-matched 6mm GaN HEMTs single chip

A 22W Ku band power amplifier based on internal-matched 6mm ...

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International Workshop on Microwave and Millimeter Wave Circuits and System technology (MMWCST)

作者： W. J. Luo X. J. Chen L. Pang T. T. Yuan X. Y. Liu Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing China

A Ku-band power amplifier is successfully developed with an internal-matched single chip 6mm AlGaN/GaN high electron mobility transistors (HEMTs). LCL network together with microstrip circuits are used to directly match the impedance of the 6mm GaN HEMTs to 50Ohm without using power combiner. Under the pulsed condition (100μs, 10%), the developed GaN HEMTs power amplifier delivers a 22W saturated output power with 7.6dB linear gain and 26.8% maximum power-added efficiency (PAE) with a drain voltage of 32V and at the frequency of 13.7GHz. To our best knowledge, the achieved high performance power amplifier is the state-of-the-art result ever reported for internal-matched 6mm gate width single chip GaN-based hybrid microwave integrated power amplifier at Ku-band.

关键词： Power amplifiers Gallium nitride HEMTs MODFETs Aluminum gallium nitride Power generation Gain

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Investigations of Fermi Level Pinning and dipole formation in Ti N/HfO2/SiO2/Si Stacks

Investigations of Fermi Level Pinning and dipole formation i...

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2012 International Conference on Material Sciences and Manufacturing technology(ICMSMT 2012)

作者： Jing Zhang Xiaolei Wang Kai Han Wenwu Wang Chao Zhao Dapeng Chen Tianchun Ye Microelectronics Department North China University of Technology Key Laboratory of Microelectronics Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences

Fermi level pinning（FLP） and dipole formation in TiN/HfO/SiO/Si stacks are investigated. The magnitude of FLP at Ti N/HfO interface is estimated to be V based on dipole theory using concepts of interfacial gap states and charge neutrality level（CNL）. The dipole amount at HfO/SiO interface is experimentally extracted to be +0.33 V. These results show that dipole formation at HfO/SiO interface is important for tuning flatband voltage of the TiN/HfO/SiO/Si stacks. Possible origin of dipole formation is demonstrated and attributed to be lower CNL of HfO compared with that of SiO/Si stacks.

关键词： Fermi level pinning dipole formation charge neutrality level

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Estimations of Fermi Level Pinning and dipole formation in TiN/HfO2/SiO2/Si Stacks

Estimations of Fermi Level Pinning and dipole formation in T...

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2012 IEEE 11th International Conference on Solid-State and Integrated Circuit technology(ICSICT-2012)

作者： Xiaolei Wang Wenwu Wang Jing Zhang Jinjuan Xiang Kai Han Xueli Ma Hong Yang Chao Zhao Dapeng Chen Tianchun Ye Key Laboratory of Microelectronics Devices&Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences Microelectronics Department North China University of Technology

Fermi level pinning(FLP)and dipole formation in TiN/HfO2/SiO2/Si stacks are *** magnitude of Fermi level pinning at TiN/HfO2 interface is estimated to be V based on dipole theory using concepts of interfacial gap states and charge neutrality *** dipole amount at HfO2/SiO2 interface is experimentally extracted to be +0.33 *** results show that dipole formation at HfO2/SiO2 interface is important for tuning flatband voltage of the TiN/HfO2/SiO2/Si stacks.

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