A new driving topology for DC motor to suppress kickback voltage is presented in this paper. By adopting a power isolation block, the proposed new driving topology for DC motor can suppress the kickback voltage of DC ...
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We demonstrate high performance silicon nanowire gate-all-around MOSFETs (SNWFETs) fabricated on bulk Si by a novel top-down CMOS-compatible method. The fabricated N- and P-type SNWFETs of sub-50 nm gate length and of...
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We demonstrate high performance silicon nanowire gate-all-around MOSFETs (SNWFETs) fabricated on bulk Si by a novel top-down CMOS-compatible method. The fabricated N- and P-type SNWFETs of sub-50 nm gate length and of ~5 nm in diameter show excellent short channel effects (SCEs) immunity with subthreshold slope (SS) of 90/69 mV/dec, DIBL of 47/10 mV/V, and high driving current of 2×10 3 /5.4×10 3 μA/μm at 0.1 nA/μm off-current.
In this paper, the characteristics of gate strain enginnering on 22nm High-k/Metal-Gate-last (HK/MG-last) CMOS device are studied through a process and device simulation by Sentarus TCAD tools. In addition, we propose...
In this paper, the characteristics of gate strain enginnering on 22nm High-k/Metal-Gate-last (HK/MG-last) CMOS device are studied through a process and device simulation by Sentarus TCAD tools. In addition, we proposed novel gate electrode architecture with trapezoid profile and investigated its special strain effect on channel. We also proposed one new integration approach for stressed dummy gate fabrication.
Tetrahedral Carbon (Ta-C) films with extremely high compressive stress (5~10GPa) were fabricated using double 90o-bend Filtered Cathodic Vacuum Arc (FCVA) technique. Sp3-bonding content in the film was estimated to be...
Tetrahedral Carbon (Ta-C) films with extremely high compressive stress (5~10GPa) were fabricated using double 90o-bend Filtered Cathodic Vacuum Arc (FCVA) technique. Sp3-bonding content in the film was estimated to be >65% determined by multi-wavelength Raman spectra and XPS analysis and it confirms the high quality of the deposited film. In comparison to conventional silicon nitride stress-liner, Ta-C is expected to generate several times higher compressive stress in the channel of sub-32nm p-MOSFET. The electrical performance enhancement induced by extremely high stress liner was investigated through TCAD simulations. The results indicate that a thin Ta-C stress-liner with extremely high compressive stress provides one promising solution for suppressing performance-enhancement degradation in conventional p-MOSFET structure while scaled into sub-32nm node.
The black multi-crystalline silicon（mc-Si） has been successfully produced by plasma immersion ion *** microstructure and the reflectance of the black mc-Si have been investigated by atomic force microscope and spect...
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The black multi-crystalline silicon（mc-Si） has been successfully produced by plasma immersion ion *** microstructure and the reflectance of the black mc-Si have been investigated by atomic force microscope and spectrophotometer,*** show that the black mc-Si exhibits a hillock structure with a low ***,with decreasing the diffusion temperature,the external quantum efficiency of the black mc-Si solar cell increases below 50 nm wavelength due to reduced surface *** optimal conversion effieciency of the black mc-Si solar cell is 15.50%at the diffusion temperature of 825 ℃.Furthermore,it is interesting to find that there are something different between black mc-Si and acid etched mc-Si on the impact of diffusion.
A synthetic method of LiFePO4/C composite used as the cathode material in lithium ion battery was presented in this paper by two carbon doping steps. The experimental results verified that the C-doping at different st...
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A synthetic method of LiFePO4/C composite used as the cathode material in lithium ion battery was presented in this paper by two carbon doping steps. The experimental results verified that the C-doping at different stages has no effect on crystal form of LiFePO4/C composite and clear effect on electrochemical performances. The carbon doping by two steps can enhance the capacity and improve the stability of cathode material obviously. As the 3wt% carbon doped in lithium iron phosphate by inducing saccharose, the powders with smaller size were prepared successfully and the sample possessed excellent electrochemical performs. The initiate capacity and specific capacity after 20 cycles of LiFePO4/0.2C composite were 161.19 and 153.68 mAh/g respectively.
During the forming process of the free-standing structure or the functional cavity when releasing the high aspect ratio sacrificial layer, such structures tend to stick to the substrate due to capillary force. This pa...
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During the forming process of the free-standing structure or the functional cavity when releasing the high aspect ratio sacrificial layer, such structures tend to stick to the substrate due to capillary force. This paper describes the application of pull-in length conception as design rules to a novel ＇dimpled＇ method in releasing sacrificial layer. Based on the conception of pull-in length in adhering Phenomenon, the fabrication and releasing sacrificial layer methods using micro bumps based on the silicon substrate were presented. According to the thermal isolation performances of one kind of micro electromechanical system device thermal shear stress sensor, the sacrificial layers were validated to be successfully released.
A new driving topology for DC motor to suppress kickback voltage is presented in this paper. By adopting a power isolation block, the proposed new driving topology for DC motor can suppress the kickback voltage of DC ...
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A new driving topology for DC motor to suppress kickback voltage is presented in this paper. By adopting a power isolation block, the proposed new driving topology for DC motor can suppress the kickback voltage of DC motor without large capacitor, power Zener diode, and it also no need high speed comparators for detecting the kickback voltage of DC motor. Furthermore, all the devices used in the new driving topology are available in the ordinary driving circuit of DC motor. Even if the power isolation block can be realized through adjusting connection of the ordinary driving circuit of DC motor. Therefore it can suppress the kickback voltage of DC motor with low-cost. The proposed new driving topology Consists of two parts: one is to generating the logic control signal, the other is power driving devices. And test results demonstrate that the new topology could suppress the kickback voltage of DC motor effectively.
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