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A bootstrapped switch employing a new clock feed-through compensation technique

Journal of Semiconductors 2009年第12期30卷 93-102页

作者：吴笑峰刘红侠苏立郝跃李迪胡仕刚 School of Microelectronics Xidian UniversityKey Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices School of Information and Electrical Engineering Hunan University of Science and Technology NXP Semiconductors (Shanghai) Ltd

Nonlinearity caused by the clock feed-through of a bootstrapped switch and its compensation techniques are analyzed. All kinds of clock feed-through compensation configurations and their drawbacks are also investigated. It is pointed out that the delay path match of the clock boosting circuit is the critical factor that affects the effectiveness of clock feed-through compensation. Based on that, a new clock feed-through compensation configuration and corresponding bootstrapped switch are presented and designed optimally with the UMC mixed-mode/RF 0.18 μm 1P6M P-sub twin-well CMOS process by orientating and elaborately designing the switch MOSFETs that influence the delay path match of the clock boosting circuit. HSPICE simulation results show that the proposed clock feedthrough compensation configuration can not only enhance the sampling accuracy under variations of process, power supply voltage, temperature and capacitors but also decrease the even harmonic, high-order odd harmonic and THD on the whole effectively.

关键词： bootstrapped switch clock feed-through compensation delay path match

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Water-Controlled Synthesis of Low-Dimensional Molecular Crystals and the Fabrication of a New Water and Moisture Indicator

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Nano Research 2009年第11期2卷 857-864页

作者： Zhuoyu Ji Huanli Dong Ming Liu Wenping Hu Beijing National Laboratory for Molecular Sciences Key Laboratory of Organic SolidsInstitute of ChemistryChinese Academy of SciencesBeijing 100190China Key Laboratory of Nano-Fabrication and Novel Devices Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China

Arrays of low-dimensional molecular crystals of square columns(1-D)and nanolamellae(2-D)of Zn[TCNQ]_(2)(H_(2)O)_(2)with large areas(up to 1020 cm^(2))have been synthesized by controlled addition of water to Zn and *** on the ability to accurately control the reaction,a new moisture and water indicator has been *** simple method,the large areas of material prepared,the fine size tuning,and the typical semiconductor behavior of the resulting low-dimensional molecular materials promise applications in molecular electronics as well as *** system is an effective indicator for the detection of traces of water and moisture.

关键词： Molecular materials molecular crystals nanomaterials water indicator

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Problems on fabrication of computer-generated holograms for testing aspheric surfaces

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Chinese Optics Letters 2009年第1期7卷 70-73页

作者：马骏高志山朱日宏何勇陈磊李建欣潘裕斌 W.H.Wong 黄立辉谢常青朱效立马杰 Department of Optical Engineering Nanjing University of Science and Technology Department of Electronic Engineering City University of Hong KongKowloon Tang Key Laboratory of Nano-Fabrication and Novel Devices Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences

Interferometric optical testing using computer-generated hologram （CGH） can give highly accurate measurement of aspheric surfaces has been proved. After the system is designed, a phase function is obtained according to the CGH＇s surface plane. For the requirement of accuracy, an optimization algorithm that transfers the phase function into a certain mask pattern file is presented in this letter, based on the relationship between the pattern error of CGH and the output wavefront accuracy. Then the writing machine is able to fabricate such a mask with this kind of file. With that mask, an improved procedure on fabrication of phase type CGH is also presented. Interferometrie test results of an aspherie surface show that the whole test system obtains the demanded accuracy.

关键词： Computer generated holography Electron holography Holograms Interferometry Masks Optical testing Probability density function

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The synthesization of Si nanocrystals embedded in HfO2 matrix by electron beam co-evaporation technique

The synthesization of Si nanocrystals embedded in HfO2 matri...

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ISTC/CSTIC 2009 (CISTC)

作者： Li, Weilong Jia, Rui Chen, Chen Liu, Ming Li, Haofeng Zhu, Chenxin Long, Shibing Key Laboratory of Nanofabrication and Novel Devices Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China

ISBN: (纸本)9781615676460

Silicon nanocrystals synthesized by electron beam co-evaporation (EBCE) of Si and HfO2 mixture are studied. HfO2 and Si powder are uniformly mixed together in certain proportion. The mixed Si & HfO 2 powder is evaporated by electron beam evaporation technique. Then the SRO thin films are annealed at different temperatures at 2 hours in N 2 ambient to synthesize Silicon nanocrystals. For the sample annealed at 1050°C at 2 hours, silicon nanocrystals with different size between 3 nm to 5 nm, the mean diameter of 4.0 nm, and the density of 3×10 12 cm-2 are evidently observed by high resolution transmission electron microscopy (HRTEM). Then the Raman scattering and photoluminescence spectra arising from Silicon nanocrystals are further confirmed the above result. In addition, the samples annealed at 900°C for 2 hours to 8 hours are carefully studied by Raman spectra. This way of preparing SRO thin films and Si NCs has unique advantage and is controllable and flexible. ©The Electrochemical Society.

关键词： Thin films

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Fabrication and Characterization of Si Nanocrystals Synthesized by Electron Beam Evaporation of Si and SiO2 Mixture

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Chinese Physics Letters 2009年第4期26卷 184-187页

作者：李维龙贾锐刘明陈晨谢常青朱晨昕李昊峰张培文叶甜春 Key Laboratory of Nanofabrication and Novel Devices Integrated Technology Institute o[ Microelectronics Chinese Academy of Sciences Beijing 100029

Silicon nanocrystals synthesized by electron beam （e-beam） evaporation of Si and SiO2 mixture are studied. Rutherford backscattering spectrometry of the as-deposited Si-rich silicon dioxide or oxide （SRO） thin film shows that after evaporation, the Si and SiO2 concentration is well kept, indicating that the e-beam evaporation is suitable for evaporating mixtures of Si and SiO2. The SRO thin films are annealed at different temperatures for two hours to synthesize silicon nanoerystals. For the sample annealed at 1050℃, silicon nanoerystals with different sizes and the mean diameter of 4.5 nm are evidently observed by high resolution transmission electron microscopy （HRTEM）. Then the Raman scattering and photoluminescence spectra arising from silicon nanocrystals are further confirmed the above results.

关键词： NANOSILICON NANOCRYSTALS INORGANIC compounds -- Synthesis ELECTRON beams EVAPORATION (Chemistry) SILICON compounds BACKSCATTERING RAMAN effect

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Tuning Reaction Processes for the Synthesis of Micron and Nanometer Sized, Single Crystalline Lamellae of Copper 7,7,8,8-tetracyano-p-quinodimethane (Phase II) with Large Area

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Nano Research 2009年第8期2卷 630-637页

作者： Yaling Liu Zhuoyu Ji Hongxiang Li Wenping Hu Yunqi Liu Daoben Zhu Beijing National Laboratory for Molecular Sciences Key Laboratory of Organic SolidsInstitute of ChemistryChinese Academy of SciencesBeijing 100190China National Center for Nanoscience and Technology Beijing 100190China Department of Compound Semiconductor Devices and Circuit Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China

Two simple methods have been demonstrated to obtain large area,single crystalline lamellae of copper-7,7,8,8-tetracyanoquinodimethane(CuTCNQ).The formation of the lamellae was a result of fine tuning of the processes during the synthesis processes of CuTCNQ phase *** facile synthesis of large area single crystalline lamellae suggests bright prospects for the study and understanding of the electrical switching of CuTCNQ by using single crystals of its phase II,and future applications of the material in memory and switching devices.

关键词： CuTCNQ lamellae single crystals phase II

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Impact of B-site Hf 4+-doping on the structural and ferroelectric properties of Bi 4 Ti3O12 thin films

Impact of B-site Hf 4+-doping on the structural and ferroele...

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International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device technology for Sensors

作者： Zhang, Yu Zuo, Changming Wang, Xiaoping Zhu, Jun Ji, Hong State Key Laboratory of Electronic Thin Films and Integrated Devices School of Microelectronics and Solid State Electronics University of Electronic Science and Technology of China Chengdu 610054 China

ISBN: (纸本)9780819476623

Hf 4+-doped and undoped (028)-oriented Bi 4 Ti 3O12 ferroelectric films with the same thickness have been deposited on two SrRuO3 -covered (111)-oriented SrTiO 3 substrates by pulsed laser deposition (PLD). The structures of the two films were studied by x-ray diffraction (XRD). It was found that the Hf 4+ion doped at site B has greatly improved the remnant polarization and fatigue property. That because the Hf 4+ion has changed the structure of Hf 4+-doped Bi 4 Ti 3 O 12 film a lot including a tensile strain along a axis, a triple-domain structure and distortion of oxygen octahedral which result in an increase of the remnant polarization. and the triple-domain structure and the reduction of oxygen vacancies also caused by Hf 4+ion doping improved the fatigue property. © 2009 SPIE.

关键词： X ray diffraction

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Growth and characteristics analysis of the thermal oxide grown on gallium nitride

Growth and characteristics analysis of the thermal oxide gro...

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2009 Symposium on Photonics and Optoelectronics, SOPO 2009

作者： Jiangfeng, Du Jinxia, Zhao Qian, Luo Zhiwei, Yu Jianxin, Xia Mohua, Yang State Key Laboratory of Electronic Thin Films and Integrated Devices School of Microelectronics and Solid-state Electronics University of Electronic Science and Technology of China Chengdu 610054 China

ISBN: (纸本)9781424444113

The thermal oxidation process at 900C in dry oxygen O2 on gallium nitride (GaN) and the physical characteristics of the oxide thin films are investigated by spectroscopic ellipsometry (SE) and X-ray photoelectron spectroscopy (XPS). XPS spectra of Ga3d and O1s core levels indicates that the thermal oxide is gallium oxide (Ga2O 3), and the existence of much O loss on the surface induces the ratio of Ga to O is more than 1. SE metrical results indicate the average grown rate is ∼25nm/h. The refractive index of Ga2O3 is 1.8-2.1 in the wavelength range of 300-800nm, which agrees with the prevenient study results. However, anomalous refractive phenomenon appeares at 300-400nm, the reason is probably interrelated with the strong absorbance of GaN in this wavelength range and needs deeper study later. Such stable and controllable Ga2O3 thermal growth process is significant for GaN gate dielectric applications in the future. ©2009 IEEE.

关键词： Gallium nitride

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Fabrication of ll-nm-Wide Silica-Like Lines Using X-Ray Diffraction Exposure

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Chinese Physics Letters 2009年第8期26卷 273-275页

作者：朱效立谢常青张满红刘明陈宝钦潘峰 Laboratory of Advanced Materials Department of Materials Science and Engineering Tsinghua University Beijing 100084 Key Laboratory of Nano-fabrication and Novel Devices Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029

Fine silica-like fines with 11 nm width are successfully fabricated using x-ray Fresnel diffraction exposure. X-rays pass a mask of 175-nm-wide lines and 125-nm-wide spaces and form sharp peaks on a wafer coated with a layer of hydrogen silsesquioxane resist （HSQ）. By precisely controlling the mask-wafer gap at 10μm using the laser interferogram method, the fine structures are defined on HSQ. Experimental images are reproduced by a simulation using the one-dimensional beam propagation method. This lithographic technique presents a novel and convenient way to fabricate fine silica-like structures and devices in nano-optical and nanoelectronic applications.

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Characteristic analysis of a new high-speed and low-power CMOS dynamic comparator

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Zhongnan Daxue Xuebao (Ziran Kexue Ban)/Journal of Central South University (Science and technology) 2009年第5期40卷 1354-1359页

作者： Wu, Xiao-Feng Liu, Hong-Xia Shi, Li-Chun Li, Di Hu, Shi-Gang Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices of Ministry of Education School of Microelectronics Xidian University Xi'an 710071 China School of Information and Electrical Engineering Hunan University of Science and Technology Xiangtan 411201 China

To reduce power dissipation of a sigma-delta analog-to-digital converter, a new high-speed and low-power dissipation CMOS preamplifier-latch comparator, which is suitable for use in a sigma-delta analog-to-digital converter, was presented in CMOS 0.18m technology. The comparator consists of a reference voltage generation circuit, a preamplifier and a latch stage followed by a dynamic latch that operates as an output sampler. The output sampler circuit consists of a full transmission gate (TG) and two inverters. The use of this sampling stage results in the reduction in the power dissipation of the high-resolution comparator. Hspice simulations of the proposed circuit in a UMC 0.18m standard CMOS technology operating at supply voltage of 1.8 V was made. The results show that the resolution is 8 bit and the power dissipation is only 24.4W at 40 MHz. The power dissipation is about 1/3 of that of the similar comparators.

关键词： Analog to digital conversion

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