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检索条件"机构=Key Laboratory of Microelectronics Devices and Integration Technology"
1308 条 记 录,以下是121-130 订阅
排序:
0.1V Low Power Bandgap Reference For RRAM Storage Applications  16
0.1V Low Power Bandgap Reference For RRAM Storage Applicatio...
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16th IEEE International Conference on Solid-State and Integrated Circuit technology, ICSICT 2022
作者: Han, Yongkang Zhang, Wenjun Cao, Yue Jiang, Haijun Zhou, Ruixi Xu, Xiaoxin Yang, Jianguo Zhejiang Lab Hangzhou311121 China Institute of Microelectronics of the Chinese Academy of Sciences Key Laboratory of Microelectronics Devices and Integrated Technology Beijing100029 China
This article proposes a bandgap for RRAM storage, which can work at a minimum of 0.7V power supply and provide a reference voltage of 0.1V. The circuit uses sub threshold technology to reduce the power supply voltage,... 详细信息
来源: 评论
Side-chain symmetry-breaking strategy on porphyrin donors enables high-efficiency binary all-small-molecule organic solar cells
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SusMat 2024年 第3期4卷 204-213页
作者: Wentao Zou Xu Zhang Haojiang Shen Wenqing Zhang Xinyue Jiang Liaohui Ni Can Shen Longlong Geng Xiaotao Hao Yingguo Yang Xunchang Wang Renqiang Yang Yanna Sun Yuanyuan Kan Ke Gao Shandong Provincial Key Laboratory for Science of Material Creation and Energy Conversion Science Center for Material Creation and Energy ConversionInstitute of Frontier ChemistrySchool of Chemistry and Chemical EngineeringShandong UniversityQingdaoChina School of Physics State Key Laboratory of Crystal MaterialsShandong UniversityJinanChina Shandong Provincial Key Laboratory of Monocrystalline Silicon Semiconductor Materials and Technology College of Chemistry and Chemical EngineeringDezhou UniversityDezhouChina School of Microelectronics Fudan UniversityShanghaiChina Key Laboratory of Optoelectronic Chemical Materials and Devices(Ministry of Education) School of Optoelectronic Materials&TechnologyJianghan UniversityWuhanChina
Side-chain symmetry-breaking strategy plays an important role in developing photovoltaic materials for high-efficiency all-small-molecule organic solar cells(ASM OSCs).However,the power conversion efficiencies(PCEs)of... 详细信息
来源: 评论
Octahedral tilt distortion in negative thermal expansion in the fluorides CaZrF6 and ScF3
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Physical Review B 2024年 第6期110卷 064322页
作者: Kaiyue Zhao Yixin Jiao Qiang Sun Ri He Andrea Sanson Zhicheng Zhong Erjun Liang Qilong Gao Key Laboratory of Materials Physics of Ministry of Education and School of Physics and Microelectronics Key Laboratory of Magnetic Materials Devices and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology Department of Physics and Astronomy and Department of Management and Engineering
Understanding the mechanism of negative thermal expansion (NTE) and controlling the thermal expansion properties of materials at the atomistic level have long captured the attention of scholars. In this regard, the NT... 详细信息
来源: 评论
Long-term and short-term plasticity independently mimicked in highly reliable Ru-doped Ge_(2)Sb_(2)Te_(5) electronic synapses
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InfoMat 2024年 第8期6卷 85-96页
作者: Qiang Wang Yachuan Wang Yankun Wang Luyue Jiang Jinyan Zhao Zhitang Song Jinshun Bi Libo Zhao Zhuangde Jiang Jutta Schwarzkopf Shengli Wu Bin Zhang Wei Ren Sannian Song Gang Niu State Key Laboratory for Manufacturing Systems Engineering Electronic Materials Research LaboratoryKey Laboratory of the Ministry of Education&International Center for Dielectric ResearchSchool of Electronic Science and EngineeringXi'an Jiaotong UniversityXi'anthe People's Republic of China School of Integrated Circuits Peking UniversityBeijingthe People's Republic of China Beijing Microelectronics Technology Institute Beijingthe People's Republic of China National Key Laboratory of Human-Machine Hybrid Augmented Intelligence National Engineering Research Center for Visual information and Applicationsand School of SoftwareXi'an Jiaotong UniversityXi'anthe People's Republic of China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghaithe People's Republic of China Key Laboratory of Microelectronics Device and Integrated Technology The Institute of Microelectronics of Chinese Academy of SciencesBeijingthe People's Republic of China University of Chinese Academy of Sciences Beijingthe People's Republic of China The State Key Laboratory for Manufacturing Systems Engineering&The International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology Xi'an Jiaotong UniversityXi'anthe People's Republic of China Leibniz-Institut für Kristallzüchtung Max-Born-Straße 2BerlinGermany Key Laboratory of Physical Electronics and Devices Ministry of EducationSchool of Electronic Science and EngineeringXi'an Jiaotong UniversityXi'anthe People's Republic of China The International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology Xi'an Jiaotong UniversityXi'anthe People's Republic of China
In order to fulfill the complex cognitive behaviors in neuromorphic systems with reduced peripheral circuits,the reliable electronic synapses mimicked by single device that achieves diverse long-term and short-term pl... 详细信息
来源: 评论
High-performance sub-50nm channel length 3d monolithically stackable vertical igzo tfts for active-matrix application  59th
High-performance sub-50nm channel length 3d monolithically s...
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59th International Symposium, Seminar and Exhibition, Display Week 2022
作者: Duan, Xinlv Huang, Kailiang Feng, Junxiao Yin, Shihui Wang, Zhaogui Jiao, Guangfan Wu, Ying Jing, Weiliang Wang, Zhengbo Li, Jingyu Xu, Jeffrey Chen, Chuanke Chen, Qian Chuai, Xichen Lu, Congyan Yang, Guanhua Geng, Di Li, Ling Liu, Ming Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics of the Chinese Academy of Sciences Beijing China Huawei Technologies Co. LTD China
For the first time, we propose a stackable vertical Channel-All-Around (CAA) IGZO FETs. The device is fabricated in a BEOL-compatible process flow where the channel and gate stack is deposited by Plasma-Enhanced Atomi... 详细信息
来源: 评论
A New n+-Formation Process by NH3 Plasma Treatment for Top Gate Coplanar IGZO Thin-film Transistors
A New n+-Formation Process by NH3 Plasma Treatment for Top G...
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International Conference on Display technology, ICDT 2022
作者: Chen, Chuanke Duan, Xinlv Chen, Qian Ji, Hansai Huang, Shijie Chuai, Xichen Wu, Wanming Geng, Di Key Laboratory of Microelectronics Devices & Integrated Technology IMECAS Beijing China University of Chinese Academy of Sciences Beijing China
In coplanar structure thin-film transistor (TFT), the formation of source/drain region with doping process is important to get high mobility. In this paper, the effects of NH3 plasma treatment to form n+ region have b... 详细信息
来源: 评论
Cost-Efficient Soft Error Detection and Correction Flip-Flop Design for Nanoscale technology  15
Cost-Efficient Soft Error Detection and Correction Flip-Flop...
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15th IEEE International Conference on ASIC, ASICON 2023
作者: Li, Hong-Chen Liu, He Li, Jie Heilongjiang University Heilongjiang Provincial Key Laboratory of Micro-Nano Sensitive Devices and Systems Harbin150008 China Harbin Institute of Technology Microelectronics Center Harbin150008 China
With the rapid development of integrated circuits and the scaling down of transistor feature sizes, the susceptibility of flip-flops to the Single Event Transient (SET) and Single Event Upset (SEU) increases. In this ...
来源: 评论
Demonstration of vertical Ga2O3 Schottky barrier diodes directly on heavily doped single-crystal substrate using thermal oxidation technology
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The European Physical Journal Special Topics 2025年 1-8页
作者: Liu, Hongyu Han, Shida Lu, Xiaoli Wang, Yuangang Dun, Shaobo Han, Tingting Lv, Yuanjie Feng, Zhihong State Key Laboratory of Wide Bandgap Semiconductor Devices and Integrated Technology School of Microelectronics Xidian University Xi’an China National Key Laboratory of Solid-State Microwave Devices and Circuits Hebei Semiconductor Research Institute Shijiazhuang China
In this letter, by implementing thermal oxidation (TO) technology, vertical Ga2O3 Schottky barrier diodes were directly fabricated on a heavily doped single-crystal (001) β-Ga2O3 substrate without epitaxial growth. T...
来源: 评论
High-speed electro-optic modulation in topological interface states of a one-dimensional lattice
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Light(Science & Applications) 2023年 第9期12卷 1961-1970页
作者: Yong Zhang Jian Shen Jingchi Li Hongwei Wang Chenglong Feng Lei Zhang Lu Sun Jian Xu Ming Liu Ying Wang Yonghui Tian Jianwen Dong Yikai Su State Key Laboratory of Advanced Optical Communication Systems and Networks Department of Electronic EngineeringShanghai Jiao Tong UniversityShanghai 200240China Center for Advanced Electronic Materials and Devices Shanghai Jiao Tong UniversityShanghai 200240China Institute of Microelectronics and Key Laboratory for Magnetism and Magnetic Materials of MOE School of Physical Science and TechnologyLanzhou UniversityLanzhou 730000 GansuChina State Key Laboratory of Optoelectronic Materials and Technologies&School of Physics Sun Yat-sen UniversityGuangzhou 510275China
lectro-optic modulators are key components in data communication,microwave photonics,and quantum *** bandwidth,energy efficiency,and device dimension are crucial metrics of ***,we provide an important direction for th... 详细信息
来源: 评论
Steady-state and transient electronic transport properties of β-(Al_(x)Ga_(1-x))_(2)O_(3)/Ga_(2)O_(3)heterostructures:An ensemble Monte Carlo simulation
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Chinese Physics B 2022年 第11期31卷 522-529页
作者: Yan Liu Ping Wang Ting Yang Qian Wu Yintang Yang Zhiyong Zhang State Key Laboratory of Integrated Service Networks School of Telecommunications EngineeringXidian UniversityXi'an 710071China Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices School of MicroelectronicsXidian UniversityXi'an 710071China School of Information Science and Technology Northwest UniversityXi'an 710027China
The steady-state and transient electron transport properties ofβ-(Al_(x)Ga_(1-x))_(2)O_(3)/Ga_(2)O_(3)heterostructures were investigated by Monte Carlo simulation with the classic three-valley *** particular,the elec... 详细信息
来源: 评论