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Investigation of Vertically Stacked Horizontal Gate-All-Around SI Nanosheet Ion Sensitive Field Effect Transistor For Detection of C-Reactive Protein

Investigation of Vertically Stacked Horizontal Gate-All-Arou...

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2023 China Semiconductor technology International Conference, CSTIC 2023

作者： Liu, Yang Zhang, Qingzhu Li, Junjie Wu, Cinan Cao, Lei Luo, Yanna Zhang, Zhaohao Wei, Shuhua Wei, Qianhui Yao, Jiaxin Hu, Jiawei Qin, Meiyan Liu, Enxu Han, Yanchu Li, LianLian Li, YingLu Yang, Tao Zhou, Na Gao, Jianfeng Li, Junfeng Institute of Microelectronics Chinese Academy of Sciences Key Laboratory of Microelectronic Devices and Integration Technology Beijing100029 China Guizhou University College of Big Data and Information Engineering Guiyang550025 China North China University of Technology School of Information Science and Technology Beijing100144 China State Key Laboratory of Advanced Materials for Smart Sensing Grinm Group Co. Ltd. Beijing100088 China

ISBN: (纸本)9798350311006

In this work, based on advanced gate-all-around (GAA) technology, the extended sensing gate (ESG) GAA Si nanosheet (SiNS) ion sensitive field effect transistor (ISFET) sensor was fabricated and reported for the first time. Due to the GAA structures and the vertically-stacked SiNS channels, the average sensitivity of the ESG GAA SiNS ISFET sensor can be reached 58.8 mV/pH, which provides good gate control and ultra-sensitive detection capabilities. In addition, the actual minimum detection concentration of C-reactive protein (CRP) by ESG GAA SiNS ISFET sensor in 1× PBS environment is as low as 100pg/mL, which is much lower than the normal concentration of human body. © 2023 IEEE.

关键词： Nanosheets

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0.1V Low Power Bandgap Reference For RRAM Storage Applications 16

0.1V Low Power Bandgap Reference For RRAM Storage Applicatio...

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16th IEEE International Conference on Solid-State and Integrated Circuit technology, ICSICT 2022

作者： Han, Yongkang Zhang, Wenjun Cao, Yue Jiang, Haijun Zhou, Ruixi Xu, Xiaoxin Yang, Jianguo Zhejiang Lab Hangzhou311121 China Institute of Microelectronics of the Chinese Academy of Sciences Key Laboratory of Microelectronics Devices and Integrated Technology Beijing100029 China

ISBN: (数字)9781665469067

ISBN: (纸本)9781665469067

This article proposes a bandgap for RRAM storage, which can work at a minimum of 0.7V power supply and provide a reference voltage of 0.1V. The circuit uses sub threshold technology to reduce the power supply voltage, symmetrical OTA structure to improve the PVT characteristics, and cascode technology to improve the accuracy of reference current. The temperature coefficient (TC) of 1.4ppm/°C was obtained under the 0.18um process from 0 to 100°C, and 1.5uA current was finally consumed under the 0.9V power supply voltage. © 2022 IEEE.

关键词： Energy gap

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Side-chain symmetry-breaking strategy on porphyrin donors enables high-efficiency binary all-small-molecule organic solar cells

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SusMat 2024年第3期4卷 204-213页

作者： Wentao Zou Xu Zhang Haojiang Shen Wenqing Zhang Xinyue Jiang Liaohui Ni Can Shen Longlong Geng Xiaotao Hao Yingguo Yang Xunchang Wang Renqiang Yang Yanna Sun Yuanyuan Kan Ke Gao Shandong Provincial Key Laboratory for Science of Material Creation and Energy Conversion Science Center for Material Creation and Energy ConversionInstitute of Frontier ChemistrySchool of Chemistry and Chemical EngineeringShandong UniversityQingdaoChina School of Physics State Key Laboratory of Crystal MaterialsShandong UniversityJinanChina Shandong Provincial Key Laboratory of Monocrystalline Silicon Semiconductor Materials and Technology College of Chemistry and Chemical EngineeringDezhou UniversityDezhouChina School of Microelectronics Fudan UniversityShanghaiChina Key Laboratory of Optoelectronic Chemical Materials and Devices(Ministry of Education) School of Optoelectronic Materials&TechnologyJianghan UniversityWuhanChina

Side-chain symmetry-breaking strategy plays an important role in developing photovoltaic materials for high-efficiency all-small-molecule organic solar cells(ASM OSCs).However,the power conversion efficiencies(PCEs)of ASM OSCs still lag behind their polymer-based counterparts,which can be attributed to the difficulties in achieving favorable ***,two asymmetric porphyrin-based donors named DAPor-DPP and DDPor-DPP were synthesized,presenting stronger intermolecular interaction and closer molecular stacking compared to the symmetric *** DAPor-DPP:6TIC blend afforded a favorablemorphologywith nanoscale phase separation and more ordered molecular packing,thus achievingmore efficient charge transportation and suppressed charge ***,the DAPor-DPP:6TIC-based device exhibited superior photovoltaic parameters,yielding a champion PCE of 16.62%higher than that of the DDPor-DPP-based device(14.96%).To our knowledge,16.62%can be ranked as one of the highest PCE values among the binary ASM OSC *** provides a prospective approach to address the challenge ofASM OSCs in improving film morphology and further achieving high efficiency via side-chain symmetry-breaking strategy,exhibiting great potential in constructing efficient ASM OSCs.

关键词： all-small-molecule organic solar cells asymmetric side-chain engineering power conversion efficiency small molecule donors

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Octahedral tilt distortion in negative thermal expansion in the fluorides CaZrF6 and ScF3

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Physical Review B 2024年第6期110卷 064322页

作者： Kaiyue Zhao Yixin Jiao Qiang Sun Ri He Andrea Sanson Zhicheng Zhong Erjun Liang Qilong Gao Key Laboratory of Materials Physics of Ministry of Education and School of Physics and Microelectronics Key Laboratory of Magnetic Materials Devices and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology Department of Physics and Astronomy and Department of Management and Engineering

Understanding the mechanism of negative thermal expansion (NTE) and controlling the thermal expansion properties of materials at the atomistic level have long captured the attention of scholars. In this regard, the NTE mechanism of fluorides such as monometallic ScF3 and bimetallic fluorides like CaZrF6 is particularly interesting; despite sharing similar crystal structure, CaZrF6 exhibits a thermal expansion coefficient twice that of ScF3. Why is this so? Here, we investigate the structural vibrations of these two substances in real and reciprocal space at atmospheric and zero pressure, respectively, using machine-learning based deep potentials in combination with density-functional theory. Our study reveals that the structural flexibility of CaZrF6 results in a greater number of vibration modes exhibiting negative Grüneisen parameters. Moreover, the combined impact of octahedral distortion and tilt vibration leads to a substantially greater NTE for CaZrF6 compared to ScF3. This work offers insights into understanding and tailoring NTE by considering polyhedral distortion in other open-framework materials.

关键词： Lattice dynamics Thermal expansion Density functional calculations Machine learning

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Long-term and short-term plasticity independently mimicked in highly reliable Ru-doped Ge_(2)Sb_(2)Te_(5) electronic synapses

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InfoMat 2024年第8期6卷 85-96页

作者： Qiang Wang Yachuan Wang Yankun Wang Luyue Jiang Jinyan Zhao Zhitang Song Jinshun Bi Libo Zhao Zhuangde Jiang Jutta Schwarzkopf Shengli Wu Bin Zhang Wei Ren Sannian Song Gang Niu State Key Laboratory for Manufacturing Systems Engineering Electronic Materials Research LaboratoryKey Laboratory of the Ministry of Education&International Center for Dielectric ResearchSchool of Electronic Science and EngineeringXi'an Jiaotong UniversityXi'anthe People's Republic of China School of Integrated Circuits Peking UniversityBeijingthe People's Republic of China Beijing Microelectronics Technology Institute Beijingthe People's Republic of China National Key Laboratory of Human-Machine Hybrid Augmented Intelligence National Engineering Research Center for Visual information and Applicationsand School of SoftwareXi'an Jiaotong UniversityXi'anthe People's Republic of China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghaithe People's Republic of China Key Laboratory of Microelectronics Device and Integrated Technology The Institute of Microelectronics of Chinese Academy of SciencesBeijingthe People's Republic of China University of Chinese Academy of Sciences Beijingthe People's Republic of China The State Key Laboratory for Manufacturing Systems Engineering&The International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology Xi'an Jiaotong UniversityXi'anthe People's Republic of China Leibniz-Institut für Kristallzüchtung Max-Born-Straße 2BerlinGermany Key Laboratory of Physical Electronics and Devices Ministry of EducationSchool of Electronic Science and EngineeringXi'an Jiaotong UniversityXi'anthe People's Republic of China The International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology Xi'an Jiaotong UniversityXi'anthe People's Republic of China

In order to fulfill the complex cognitive behaviors in neuromorphic systems with reduced peripheral circuits,the reliable electronic synapses mimicked by single device that achieves diverse long-term and short-term plasticity are *** change random access memory(PCRAM)is of great potential for artificial synapses,which faces,however,difficulty to realize short-term plasticity due to the long-lasting resistance *** work reports the ruthenium-doped Ge_(2)Sb_(2)Te_(5)(RuGST)based PCRAM,demonstrating a series of synaptic behaviors of short-term potentiation,pair-pulse facilitation,longterm depression,and short-term plasticity in the same single *** optimized RuGST electronic synapse with the high transformation temperature of hexagonal phase>380C,the outstanding endurance>108 cycles,the low resistance drift factor of 0.092,as well as the extremely high linearity with correlation coefficients of 0.999 and 0.976 in parts of potentiation and *** investigations also go insight to mechanisms of Ru doping according to thorough microstructure characterization,revealing that Ru dopant is able to enter GST lattices thus changing and stabilizing atomic arrangement of *** leads to the short-term plasticity realized by RuGST ***,the proposed RuGST electronic synapses performs a high accuracy of94.1%in a task of image recognition of CIFAR-100 database using ResNet *** work promotes the development of PCRAM platforms for large-scale neuromorphic systems.

关键词： electronic synapses neuromorphic computing PCRAM Ru-doped Ge_(2)Sb_(2)Te_(5)

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High-performance sub-50nm channel length 3d monolithically stackable vertical igzo tfts for active-matrix application 59th

High-performance sub-50nm channel length 3d monolithically s...

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59th International Symposium, Seminar and Exhibition, Display Week 2022

作者： Duan, Xinlv Huang, Kailiang Feng, Junxiao Yin, Shihui Wang, Zhaogui Jiao, Guangfan Wu, Ying Jing, Weiliang Wang, Zhengbo Li, Jingyu Xu, Jeffrey Chen, Chuanke Chen, Qian Chuai, Xichen Lu, Congyan Yang, Guanhua Geng, Di Li, Ling Liu, Ming Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics of the Chinese Academy of Sciences Beijing China Huawei Technologies Co. LTD China

For the first time, we propose a stackable vertical Channel-All-Around (CAA) IGZO FETs. The device is fabricated in a BEOL-compatible process flow where the channel and gate stack is deposited by Plasma-Enhanced Atomic Layer Deposition (PEALD). The impact of IGZO cycle ratio and plasma power on the device electrical performance are studied. An optimized 50nm-channel-length CAA IGZO FET achieved Ion >30μA/μm and Ioff below 1.8×10-17μA/μm at VDS = 1V. © 2022. John Wiley and Sons Inc. AIAA. All rights reserved.

关键词： Thin film transistors

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A New n+-Formation Process by NH3 Plasma Treatment for Top Gate Coplanar IGZO Thin-film Transistors

A New n+-Formation Process by NH3 Plasma Treatment for Top G...

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International Conference on Display technology, ICDT 2022

作者： Chen, Chuanke Duan, Xinlv Chen, Qian Ji, Hansai Huang, Shijie Chuai, Xichen Wu, Wanming Geng, Di Key Laboratory of Microelectronics Devices & Integrated Technology IMECAS Beijing China University of Chinese Academy of Sciences Beijing China

In coplanar structure thin-film transistor (TFT), the formation of source/drain region with doping process is important to get high mobility. In this paper, the effects of NH3 plasma treatment to form n+ region have been investigated. The results show that the top gate coplanar structure Amorphous indium-gallium-zinc-oxide(a-IGZO) TFTs with n+ source/drain by NH3 treatment exhibit high mobility and good subthreshold swing (SS), which indicates that the NH3 plasma treatment can effectively reduce the contact resistance. © 2022, John Wiley and Sons Inc. All rights reserved.

关键词： Thin film transistors

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Cost-Efficient Soft Error Detection and Correction Flip-Flop Design for Nanoscale technology 15

Cost-Efficient Soft Error Detection and Correction Flip-Flop...

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15th IEEE International Conference on ASIC, ASICON 2023

作者： Li, Hong-Chen Liu, He Li, Jie Heilongjiang University Heilongjiang Provincial Key Laboratory of Micro-Nano Sensitive Devices and Systems Harbin150008 China Harbin Institute of Technology Microelectronics Center Harbin150008 China

ISBN: (纸本)9798350312980

With the rapid development of integrated circuits and the scaling down of transistor feature sizes, the susceptibility of flip-flops to the Single Event Transient (SET) and Single Event Upset (SEU) increases. In this paper, an Error Detection and Correction D Flip-Flop (EDC DFF) is proposed by radiation-hardened by design approach, which can tolerate soft errors induced by SETs and SEUs. By adding redundant detection circuits composed of a shadow latch and a detection XOR gate, and replacing the inverter at the output with the error correction circuit controlled by the error indicator signal, EDC DFF can detect and correct soft errors induced by SETs and SEUs. Compared with the existing radiation-hardened DFF designs, the EDC DFF has higher robustness, lower overhead, and the lowest APDP (Area-Power-Delay Product). © 2023 IEEE.

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High-speed electro-optic modulation in topological interface states of a one-dimensional lattice

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Light(Science & Applications) 2023年第9期12卷 1961-1970页

作者： Yong Zhang Jian Shen Jingchi Li Hongwei Wang Chenglong Feng Lei Zhang Lu Sun Jian Xu Ming Liu Ying Wang Yonghui Tian Jianwen Dong Yikai Su State Key Laboratory of Advanced Optical Communication Systems and Networks Department of Electronic EngineeringShanghai Jiao Tong UniversityShanghai 200240China Center for Advanced Electronic Materials and Devices Shanghai Jiao Tong UniversityShanghai 200240China Institute of Microelectronics and Key Laboratory for Magnetism and Magnetic Materials of MOE School of Physical Science and TechnologyLanzhou UniversityLanzhou 730000 GansuChina State Key Laboratory of Optoelectronic Materials and Technologies&School of Physics Sun Yat-sen UniversityGuangzhou 510275China

lectro-optic modulators are key components in data communication,microwave photonics,and quantum *** bandwidth,energy efficiency,and device dimension are crucial metrics of ***,we provide an important direction for the miniaturization of electro-optic modulators by reporting on ultracompact topological modulators.A topological interface state in a one-dimensional lattice is implemented on a thin-film lithium-niobate integrated *** to the strong optical confinement of the interface state and the peaking enhancement of the electro-optic response,a topological cavity with a size of 1.6×140μm^(2)enables a large modulation bandwidth of 104 *** first topological modulator exhibits the most compact device size compared to reported LN modulators with bandwidths above 28 GHz,to the best of our knowledge.100 Gb/s non-return-to-zero and 100 Gb/s four-level pulse amplitude modulation signals are *** switching energy is 5.4 fJ/bit,owing to the small electro-optic mode volume and low *** topological modulator accelerates the response time of topological photonic devices from the microsecond order to the picosecond order and provides an essential foundation for the implementation of large-scale lithium-niobate photonic integrated circuits.

关键词： modulator interface lattice

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Demonstration of vertical Ga2O3 Schottky barrier diodes directly on heavily doped single-crystal substrate using thermal oxidation technology

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The European Physical Journal Special Topics 2025年 1-8页

作者： Liu, Hongyu Han, Shida Lu, Xiaoli Wang, Yuangang Dun, Shaobo Han, Tingting Lv, Yuanjie Feng, Zhihong State Key Laboratory of Wide Bandgap Semiconductor Devices and Integrated Technology School of Microelectronics Xidian University Xi’an China National Key Laboratory of Solid-State Microwave Devices and Circuits Hebei Semiconductor Research Institute Shijiazhuang China

In this letter, by implementing thermal oxidation (TO) technology, vertical Ga2O3 Schottky barrier diodes were directly fabricated on a heavily doped single-crystal (001) β-Ga2O3 substrate without epitaxial growth. The electron concentration in near-surface region of the Ga2O3 substrate was greatly reduced by introducing high-temperature TO processing. X-ray photoelectron spectroscopy (XPS) and photoluminescence (PL) results indicated that the oxygen vacancy (VO) content in the near-surface region was significantly decreased, while a 500–700 nm acceptor-like defect energy level combining multiple gallium vacancy (VGa) generated, and compensated for, the free carriers after annealing in an oxygen-rich atmosphere at high temperature. The annealing temperature and time were analyzed and optimized. Finally, vertical β-Ga2O3 SBDs with a breakdown voltage (Vbr) of 460 V, specific on-resistance (Ron,sp) of 10.5 mΩ·cm2 and a power figure-of-merit (PFOM) of 20.2 MW/cm2, were demonstrated when the annealing temperature and time were 900 °C and 2 h. These results indicate that vertical β-Ga2O3 SBDs can be directly fabricated on a single-crystal substrate without epitaxial growth, providing a new method of reducing the cost of such devices.

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