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New CMOS compatible super-junction LDMOST with n-type buried layer

Chinese Physics B 2007年第12期16卷 3754-3759页

作者：段宝兴张波李肇基 Microelectronics Institute Xidian University Xi'an 710071 China State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu 610054 China

A new super-junction lateral double diffused MOSFET （LDMOST） structure is designed with n-type charge compensation layer embedded in the p^--substrate near the drain to suppress substrate-assisted depletion effect that results from the compensating charges imbalance between the pillars in the n-type buried layer. A high electric field peak is introduced in the surface by the pn junction between the p^--substrate and n-type buried layer, which given rise to a more uniform surface electric field distribution by modulation effect. The effect of reduced bulk field （REBULF） is introduced to improve the vertical breakdown voltage by reducing the high bulk electric field around the drain, The new structure features high breakdown voltage, low on-resistance and charges balance in the drift region due to n-type buried layer.

关键词： super-junction LDMOST n-type buried layer REBULF breakdown voltage

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STP technology for sealing three-dimensional MEMS structures

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NTT Technical Review 2007年第10期5卷

作者： Sato, Norio Ono, Kazuyoshi Morimura, Hiroki Shigematsu, Satoshi Ishii, Hiromu Machida, Katsuyuki NTT Microsystem Integration Laboratories Atsugi-shi 243-0 98 Japan Smart Devices Laboratory NTT Microsystem Integration Laboratories Ubiquitous Interface Laboratory NTT Microsystem Integration Laboratories Nano-Electronics Business Unit Leading-Edge Key Technology Business Headquarters NTT Advanced Technology Corporation

A film-formation technology called spin-coating film transfer and hot pressing (STP) has been developed to seal three-dimensional microelectromechanical systems (MEMS) structures that include cavities and thereby protect movable parts from contamination in practical environments, The critical process in STP is film transfer. This is accomplished in a special apparatus designed for that purpose and through a process for controlling the film shape. STP was applied to the fabrication of MEMS fingerprint sensors, and the results show that sealing the cavities in the sensors enables stable fingerprint sensing.

关键词： MEMS

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Fabrication of high-density transmission gratings for X-ray diffraction

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

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Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors 2007年第12期28卷 2006-2010页

作者： Zhu, Xiaoli Ma, Jie Cao, Leifeng Yang, Jiamin Xie, Changqing Liu, Ming Chen, Baoqin Niu, Jiebin Zhang, Qingzhao Jiang, Ji Zhao, Min Ye, Tianchun Key Laboratory of Nano-Fabrication and Novel Devices Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China National Key Laboratory of Laser Fusion Chinese Academy of Engineering Physics Mianyang 621900 China Research Center of Laser Fusion Chinese Academy of Engineering Physics Mianyang 621900 China

Large area transmission gratings (TG) for soft X-ray diffraction, with an area of 10 mm × 0.5 mm, a period of 500 nm, a line-space ratio of 1:1, and a gold thickness of 430 nm, are successfully fabricated by combining electron beam lithography (EBL), X-ray lithography (XRL), and electroplating. In the processes, the mask of TG with well-defined three dimensional relief structures is originally patterned by EBL and then by electroplating. Next, the processes of XRL and electroplating allow us to efficiently and cost-effectively fabricate many copies of TG with the following two major advantages: high resolution and a vertical cross section. Moreover, the measurement of its efficiency has shown its perfect performance with respect to diffraction of EUV light.

关键词： Diffraction gratings

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Effects of quantized energy levels of QDs confined in asymmetric barriers within silicon nanowire transistor

Effects of quantized energy levels of QDs confined in asymme...

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ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit technology

作者： Chen, Jiezhi Shi, Yi Pu, Lin Zheng, Youdou Long, Shibing Liu, Ming Department of Physics Key Laboratory of Advanced Photonic and Electronic Materials Nanjing University Nanjing 210093 China Laboratory of Nanofabrication and Novel Devices Integration Institute of Microelectronics Chinese Academy of Sciences Beijing 210008 China

ISBN: (纸本)1424401615

Single-electron transistors with Silicon nanowire channel are successfully fabricated using TMAH anisotropic etching and thermal oxidation method. Transport characteristics of devices are investigated with different source/drain bias at low temperatures. Clear negative differential conductance and CB oscillations with multiple fine peaks are observed, which can be successfully explained considering the asymmetric tunneling barriers and large quantized energy levels due to ultra-small quantum dots. Especially, double-peak coupling effect is observed in Ids- Vg characteristics for the first time. © 2006 IEEE.

关键词： Electron energy levels

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Coulomb blockade oscillations in silicon single-electron transistor with a strong gate-dot coupling

Coulomb blockade oscillations in silicon single-electron tra...

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ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit technology

作者： Chen, Jiezhi Shi, Yi Pu, Lin Zheng, Youdou Long, Shibing Liu, Ming Key Laboratory of Advanced Photonic and Electronic Materials Department of Physics Nanjing University Nanjing 210093 China Laboratory of Nanofabrication and Novel Devices Integration Institute of Microelectronics Chinese Academy of Sciences Beijing 210008 China

ISBN: (纸本)1424401615

A novel structure of Si single-electron transistor (SET) with strong gate-dot coupling is developed, where the gate is fabricated just on the top of the transport channel with quantum dots (QDs) formed by anisotropic wet etching and thermal oxidation. Based on the fabricated devices having various time of wet etching and oxidation, coulomb blockade (CB) oscillations are clearly observed at high temperatures due to the large quantized energy spacing. Especially, all the measured devices exhibit high gate modulation factors. The SETs with a strong gate-dot coupling will be useful for applications in logic circuits to achieve high voltage gain. © 2006 IEEE.

关键词： Coulomb blockade

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Algorithm for transforming center-hollowed polygon in CIF format into rectangles in PG3600 format

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Weixi Jiagong Jishu/Microfabrication technology 2006年第2期 5-7+20页

作者： Li, Jin-Ru Chen, Bao-Qin Tang, Yue-Ke Xue, Li-Jun Key Laboratory of Nano-Fabrication and Novel Devices Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China

A new algorithm which is used to transform center-hollowed polygons of CIF format in microlithography pattern into rectangles of PG3600 format is presented. Firstly, polygons with inner loops are divided into triangles or trapeziums by horizontal scanning beam. Furthermore, triangles or trapeziums are divided into rectangles and right-angled triangles. Finally, right-angled triangles are enveloped by rectangles or directly divided into rectangles. The advantage of the algorithm is that it doesn't divide center-hollowed polygons into convex polygons, it makes direct divisions for polygons. Hence, the algorithm remarkably reduces the total data of the rectangles divided. Meanwhile, the algorithm can also be used for the division of polygons without inner loops.

关键词： Center-hollowed polygon Data format conversion Graphics division Microlithography pattern

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Effects of Quantized Energy Levels of QDs Confined in Asymmetric Barriers within Silicon Nanowire Transistor

Effects of Quantized Energy Levels of QDs Confined in Asymme...

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2006 8th International Conference on Solid-State and Integrated Circuit technology

作者： Jiezhi Chen Yi Shi Lin Pu Youdou Zheng Shibing Long Ming Liu Key Laboratory of Advanced Photonic and Electronic Materials and Department of Physics Nanjing University Laboratory of Nanofabrication and Novel Devices Integration Institute of MicroelectronicsChinese Academy of Sciences

ISBN: (纸本)1424401607

＜正＞Single-electron transistors with Silicon nanowire channel are successfully fabricated using TMAH anisotropic etching and thermal oxidation *** characteristics of devices are investigated with different source/drain bias at low *** negative differential conductance and CB oscillations with multiple fine peaks are observed,which can be successfully explained considering the asymmetric tunneling barriers and large quantized energy levels due to ultra-small quantum ***,double-peak coupling effect is observed in Ids-Vg characteristics for the first time.

关键词： Energy level Single electron transistors Trophic levels Nanowire silicon transistors Transistor Device Component Silicon quadrant depression Quantum dots Confined Anisotropic etching coupling effect

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Coulomb Blockade Oscillations in Silicon Single-electron Transistor with a Strong Gate-dot Coupling

Coulomb Blockade Oscillations in Silicon Single-electron Tra...

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2006 8th International Conference on Solid-State and Integrated Circuit technology

ISBN: (纸本)1424401607

＜正＞A novel structure of Si single-electron transistor（SET） with strong gate-dot coupling is developed,where the gate is fabricated just on the top of the transport channel with quantum dots（QDs） formed by anisotropic wet etching and thermal *** on the fabricated devices having various time of wet etching and oxidation, coulomb blockade（CB） oscillations are clearly observed at high temperatures due to the large quantized energy ***,all the measured devices exhibit high gate modulation *** SETs with a strong gate-dot coupling will be useful for applications in logic circuits to achieve high voltage gain.

关键词： Silicon Single electron transistors Wet etching Oxidation Quantum dots Anisotropic magnetoresistance Temperature Coupling circuits Logic circuits Voltage

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New aspects of HCI test for ultra-short channel n-MOSFET devices

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Chinese Physics B 2006年第11期15卷 2742-2745页

作者：马晓华郝跃王剑屏曹艳荣陈海峰 Microelectronics Institute Xidian University Xi'an 710071 China Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices Xidian University Xi'an 710071 China Logic Technology Development Center SMIC Shanghai 201203 China

Hot carriers injection （HCI） tests for ultra-short channel n-MOSFET devices were studied. The experimental data of short channel devices （75-90 nm）, which does not fit formal degradation power law well, will bring severe error in lifetime prediction. This phenomenon usually happens under high drain voltage （Vd） stress condition. A new model was presented to fit the degradation curve better. It was observed that the peak of the substrate current under low drain voltage stress cannot be found in ultra-short channel device. devices with different channel lengths were studied under different Vd stresses in order to understand the relations between peak of substrate current （/sub） and channel length/stress voltage.

关键词： HCI n-MOSFET short channel

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Second generation proximity X-ray lithography technology

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Weixi Jiagong Jishu/Microfabrication technology 2006年第1期 1-6页

作者： Xie, Chang-Qing Key Laboratory of Nano-fabrication and Novel Devices Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China

First generation proximity X-ray lithography (PXL) has been used for gate definition in monolithic microwave integrated circuits (MMIC) manufacturing line successfully, to extend PXL to 50 nm node and beyond, second generation PXL should be presented. The principle of second generation PXL and the key factors impact on resolution are introduced, when the process factor of second generation PXL is equal to 0.8, for 50 nm and 35 nm node resolution, the gap between X-ray mask and wafer reach 10 mm and 5 mm respectively, it is demonstrated that second generation PXL has large process latitude;the detail structure, fabrication process and cost of nanometer X-ray mask are analyzed, for 100 nm node and below, the fabrication difficulty and cost of X-ray mask are low relatively, and with the development of E-beam direct writing ability, X-ray mask is more superior to its contender;some common X-ray resist performances are described, high performance X-ray resist will not be an obstruction of PXL development;PXL stepper and X-ray source are also discussed, the R and D of point X-ray source is extremely important to the development of second generation PXL;the status of second generation PXL is also introduced finally, although PXL industry base is better than other next generation PXL, it is worse than optical lithography, ultra-large scale integrated circuits production will really accept PXL or not is not yet known until now.

关键词： Mask Resist Second generation proximity X-ray lithography Source Stepper X-ray

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