In order to develop the format conversion software that can operate in the Windows system and also can in the L-EDIT, the new algorithm of graphics along border division is introduced which used for the pattern format...
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In order to develop the format conversion software that can operate in the Windows system and also can in the L-EDIT, the new algorithm of graphics along border division is introduced which used for the pattern format conversion from CIF format to PG3600 format. The algorithm application on the division from circles or polygons into rectangles is discussed. It has obvious advantages for the division of irregular graphics in comparison with some other common algorithms.
A new type phase shift mask-sidewall chrome attenuated phase shift mask (SCAPSM) is presented. Compared to conventional attenuated phase shift mask, only two process steps are added, but its lithography resolution can...
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A new type phase shift mask-sidewall chrome attenuated phase shift mask (SCAPSM) is presented. Compared to conventional attenuated phase shift mask, only two process steps are added, but its lithography resolution can be improved greatly. With reference to exposure parameters of ArF scanner TWINSCAN XT:1400E, the SCAPSM exposure process is studied using optical lithography simulation software PROLITH. The resolution of dry 193 nm optical lithography can be improved to 50 nm when using SCAPSM + OAI.
The progress and challenge on quantum mechanism nano-devices such as single-electron transistors (SET), resonan tuneling diodes (RTD), and molecular devices are investigated and discussed. The SET with CMOS compatible...
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The progress and challenge on quantum mechanism nano-devices such as single-electron transistors (SET), resonan tuneling diodes (RTD), and molecular devices are investigated and discussed. The SET with CMOS compatible technology i successfully fabricated, and the Coulomb blockade effect is clearly observed. AlAs/GaAs/In0.1Ga0.9As/GaAs/AlAs double barrier resonant tunneling diodes (DBRTDs) grown on semi-insulated GaAs substrate with molecular beam epitaxy are demonstrated. With ringed collector and thin barriers, the devices exhibit a maximum PVCR of 13.98 and a peak current density;of 89 kA/cm2 at room temperature. Finally, the progress of molecular memory with cross-bar structure is summarized.
This paper analyzes the relation between the boundary curvature radius of the drain region and the breakdown voltage of RF RESURF LDMOS. The bending of the curve in the RESURF technology can increase the breakdown vol...
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This paper analyzes the relation between the boundary curvature radius of the drain region and the breakdown voltage of RF RESURF LDMOS. The bending of the curve in the RESURF technology can increase the breakdown voltage greatly. Analysis and simulation prove that the high breakdown voltage and much lower on-resistance in the same device profile can be maintained by an impurity dose or by increasing the thickness of the drift region and reducing boundary curvature radius of the drain region under the REUSRF principle.
A technique that combines electron beam lithography and hot embossing lithography is used to replicate Fresnel zone plate. The Fresnel zone plate mold for hot embossing lithography, with 196 zones, 250 nm outermost zo...
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A technique that combines electron beam lithography and hot embossing lithography is used to replicate Fresnel zone plate. The Fresnel zone plate mold for hot embossing lithography, with 196 zones, 250 nm outermost zone width and 196 μm diameter, is fabricated using electron beam lithography. The primary experiment results indicate that this method is a high resolution, high throughput and low cost way to replicate pattern in deep submicron scale and has good repeatability and availability.
After more than 30 years research and Development, Proximity X-ray lithography has matured considerably and it has many advantages, such as high resolution, long depth of focus, large process latitude, high throughout...
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After more than 30 years research and Development, Proximity X-ray lithography has matured considerably and it has many advantages, such as high resolution, long depth of focus, large process latitude, high throughout, and so on. For X-ray mask absorber, if Au metal is selected, it can only be plated and may pollute the silicon-based integrated circuits. TaSi film can be dry etching and does not pollute the silicon-based integrated circuits, it is a potential candidate for X-ray mask absorber. In this paper, the home-made silicon nitride/TaSi X-ray mask fabrication process is described, unlike the conventional fabrication process, after e-beam exposure and development, is etched Inductively Coupled Plasma (ICP) etching based on SF6/CHF3 gas chemistries is used to pattern the TaSi film, using ZEP520 e-beam resist as the barrier layer directly. Primary experimental result demonstrated this X-ray mask fabrication process is feasible.
Potential distribution function, electric field distribution function and electron velocity distribution function inside an ideal planar parallel vacuum microelectronics (P-VME) diode are derived through solving a sim...
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Potential distribution function, electric field distribution function and electron velocity distribution function inside an ideal planar parallel vacuum microelectronics (P-VME) diode are derived through solving a simplified cubic equation from a three halves power relationship between the anode current density and the anode voltage. The calculated values of the anode voltage, the anode electric field intensity and the anode electron velocity increases to about 50.00%, 73.21% and 22.47%, respectively, when the influence of space charge inside the P-VME diode is considered.
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