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ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit technology

作者： Chen, Jiezhi Shi, Yi Pu, Lin Zheng, Youdou Long, Shibing Liu, Ming Key Laboratory of Advanced Photonic and Electronic Materials Department of Physics Nanjing University Nanjing 210093 China Laboratory of Nanofabrication and Novel Devices Integration Institute of Microelectronics Chinese Academy of Sciences Beijing 210008 China

ISBN: (纸本)1424401615

A novel structure of Si single-electron transistor (SET) with strong gate-dot coupling is developed, where the gate is fabricated just on the top of the transport channel with quantum dots (QDs) formed by anisotropic wet etching and thermal oxidation. Based on the fabricated devices having various time of wet etching and oxidation, coulomb blockade (CB) oscillations are clearly observed at high temperatures due to the large quantized energy spacing. Especially, all the measured devices exhibit high gate modulation factors. The SETs with a strong gate-dot coupling will be useful for applications in logic circuits to achieve high voltage gain. © 2006 IEEE.

关键词： Coulomb blockade

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Algorithm for transforming center-hollowed polygon in CIF format into rectangles in PG3600 format

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Weixi Jiagong Jishu/Microfabrication technology 2006年第2期 5-7+20页

作者： Li, Jin-Ru Chen, Bao-Qin Tang, Yue-Ke Xue, Li-Jun Key Laboratory of Nano-Fabrication and Novel Devices Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China

A new algorithm which is used to transform center-hollowed polygons of CIF format in microlithography pattern into rectangles of PG3600 format is presented. Firstly, polygons with inner loops are divided into triangles or trapeziums by horizontal scanning beam. Furthermore, triangles or trapeziums are divided into rectangles and right-angled triangles. Finally, right-angled triangles are enveloped by rectangles or directly divided into rectangles. The advantage of the algorithm is that it doesn't divide center-hollowed polygons into convex polygons, it makes direct divisions for polygons. Hence, the algorithm remarkably reduces the total data of the rectangles divided. Meanwhile, the algorithm can also be used for the division of polygons without inner loops.

关键词： Center-hollowed polygon Data format conversion Graphics division Microlithography pattern

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Effects of Quantized Energy Levels of QDs Confined in Asymmetric Barriers within Silicon Nanowire Transistor

Effects of Quantized Energy Levels of QDs Confined in Asymme...

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2006 8th International Conference on Solid-State and Integrated Circuit technology

作者： Jiezhi Chen Yi Shi Lin Pu Youdou Zheng Shibing Long Ming Liu Key Laboratory of Advanced Photonic and Electronic Materials and Department of Physics Nanjing University Laboratory of Nanofabrication and Novel Devices Integration Institute of MicroelectronicsChinese Academy of Sciences

ISBN: (纸本)1424401607

＜正＞Single-electron transistors with Silicon nanowire channel are successfully fabricated using TMAH anisotropic etching and thermal oxidation *** characteristics of devices are investigated with different source/drain bias at low *** negative differential conductance and CB oscillations with multiple fine peaks are observed,which can be successfully explained considering the asymmetric tunneling barriers and large quantized energy levels due to ultra-small quantum ***,double-peak coupling effect is observed in Ids-Vg characteristics for the first time.

关键词： Energy level Single electron transistors Trophic levels Nanowire silicon transistors Transistor Device Component Silicon quadrant depression Quantum dots Confined Anisotropic etching coupling effect

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Coulomb Blockade Oscillations in Silicon Single-electron Transistor with a Strong Gate-dot Coupling

Coulomb Blockade Oscillations in Silicon Single-electron Tra...

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2006 8th International Conference on Solid-State and Integrated Circuit technology

ISBN: (纸本)1424401607

＜正＞A novel structure of Si single-electron transistor（SET） with strong gate-dot coupling is developed,where the gate is fabricated just on the top of the transport channel with quantum dots（QDs） formed by anisotropic wet etching and thermal *** on the fabricated devices having various time of wet etching and oxidation, coulomb blockade（CB） oscillations are clearly observed at high temperatures due to the large quantized energy ***,all the measured devices exhibit high gate modulation *** SETs with a strong gate-dot coupling will be useful for applications in logic circuits to achieve high voltage gain.

关键词： Silicon Single electron transistors Wet etching Oxidation Quantum dots Anisotropic magnetoresistance Temperature Coupling circuits Logic circuits Voltage

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New aspects of HCI test for ultra-short channel n-MOSFET devices

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Chinese Physics B 2006年第11期15卷 2742-2745页

作者：马晓华郝跃王剑屏曹艳荣陈海峰 Microelectronics Institute Xidian University Xi'an 710071 China Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices Xidian University Xi'an 710071 China Logic Technology Development Center SMIC Shanghai 201203 China

Hot carriers injection （HCI） tests for ultra-short channel n-MOSFET devices were studied. The experimental data of short channel devices （75-90 nm）, which does not fit formal degradation power law well, will bring severe error in lifetime prediction. This phenomenon usually happens under high drain voltage （Vd） stress condition. A new model was presented to fit the degradation curve better. It was observed that the peak of the substrate current under low drain voltage stress cannot be found in ultra-short channel device. devices with different channel lengths were studied under different Vd stresses in order to understand the relations between peak of substrate current （/sub） and channel length/stress voltage.

关键词： HCI n-MOSFET short channel

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Second generation proximity X-ray lithography technology

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Weixi Jiagong Jishu/Microfabrication technology 2006年第1期 1-6页

作者： Xie, Chang-Qing Key Laboratory of Nano-fabrication and Novel Devices Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China

First generation proximity X-ray lithography (PXL) has been used for gate definition in monolithic microwave integrated circuits (MMIC) manufacturing line successfully, to extend PXL to 50 nm node and beyond, second generation PXL should be presented. The principle of second generation PXL and the key factors impact on resolution are introduced, when the process factor of second generation PXL is equal to 0.8, for 50 nm and 35 nm node resolution, the gap between X-ray mask and wafer reach 10 mm and 5 mm respectively, it is demonstrated that second generation PXL has large process latitude;the detail structure, fabrication process and cost of nanometer X-ray mask are analyzed, for 100 nm node and below, the fabrication difficulty and cost of X-ray mask are low relatively, and with the development of E-beam direct writing ability, X-ray mask is more superior to its contender;some common X-ray resist performances are described, high performance X-ray resist will not be an obstruction of PXL development;PXL stepper and X-ray source are also discussed, the R and D of point X-ray source is extremely important to the development of second generation PXL;the status of second generation PXL is also introduced finally, although PXL industry base is better than other next generation PXL, it is worse than optical lithography, ultra-large scale integrated circuits production will really accept PXL or not is not yet known until now.

关键词： Mask Resist Second generation proximity X-ray lithography Source Stepper X-ray

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New algorithm of division for pattern format conversion from CIF to PG3600

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Weixi Jiagong Jishu/Microfabrication technology 2006年第1期 7-12页

作者： Li, Jin-Ru Tang, Yue-Ke Chen, Bao-Qin Key Laboratory of Nano-fabrication and Novel Devices Integrated Technology Institute of Microelectronics Chinese Academy of Science Beijing 100029 China

In order to develop the format conversion software that can operate in the Windows system and also can in the L-EDIT, the new algorithm of graphics along border division is introduced which used for the pattern format conversion from CIF format to PG3600 format. The algorithm application on the division from circles or polygons into rectangles is discussed. It has obvious advantages for the division of irregular graphics in comparison with some other common algorithms.

关键词： Along border division algorithm Data format conversion Graphics division Microlithography technology

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Application on sidewall chrome attenuated new structure phase shift mask

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

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Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors 2006年第SUPPL.期27卷 340-342页

作者： Xie, Changqing Liu, Ming Chen, Baoqin Ye, Tianchun Key Laboratory of Nano-Fabrication and Novel Devices Integrated Technology Institute of Microelectronics Chinese Acad. of Sci. Beijing 100029 China

A new type phase shift mask-sidewall chrome attenuated phase shift mask (SCAPSM) is presented. Compared to conventional attenuated phase shift mask, only two process steps are added, but its lithography resolution can be improved greatly. With reference to exposure parameters of ArF scanner TWINSCAN XT:1400E, the SCAPSM exposure process is studied using optical lithography simulation software PROLITH. The resolution of dry 193 nm optical lithography can be improved to 50 nm when using SCAPSM + OAI.

关键词： Photomasks

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Nano electrical devices and integration

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

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Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors 2006年第SUPPL.期27卷 7-10页

作者： Liu, Ming Chen, Baoqin Xie, Changqing Wang, Congshun Long, Shibing Xu, Qiuxia Li, Zhigang Yili, Chengrong Tu, Deyu Shang, Liwei Key Laboratory of Nano-Process and New Type of Devices Integrated Technology Institute of Microelectronics Chinese Acad. of Sci. Beijing 100029 China

The progress and challenge on quantum mechanism nano-devices such as single-electron transistors (SET), resonan tuneling diodes (RTD), and molecular devices are investigated and discussed. The SET with CMOS compatible technology i successfully fabricated, and the Coulomb blockade effect is clearly observed. AlAs/GaAs/In0.1Ga0.9As/GaAs/AlAs double barrier resonant tunneling diodes (DBRTDs) grown on semi-insulated GaAs substrate with molecular beam epitaxy are demonstrated. With ringed collector and thin barriers, the devices exhibit a maximum PVCR of 13.98 and a peak current density;of 89 kA/cm2 at room temperature. Finally, the progress of molecular memory with cross-bar structure is summarized.

关键词： Electron devices

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Optimization of breakdown voltage and on-resistance based on the analysis of the boundary curvature of the drain region in RF RESURF LDMOS

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

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Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors 2006年第10期27卷 1818-1822页

作者： Chi, Yaqing Hao, Yue Feng, Hui Fang, Liang Institute of Microelectronics School of Computer Science National University of Defense Technology Changsha 410073 China Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices School of Microelectronics Xidian University Xi'an 710071 China

This paper analyzes the relation between the boundary curvature radius of the drain region and the breakdown voltage of RF RESURF LDMOS. The bending of the curve in the RESURF technology can increase the breakdown voltage greatly. Analysis and simulation prove that the high breakdown voltage and much lower on-resistance in the same device profile can be maintained by an impurity dose or by increasing the thickness of the drift region and reducing boundary curvature radius of the drain region under the REUSRF principle.

关键词： MOSFET devices

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