A technique that combines electron beam lithography and hot embossing lithography is used to replicate Fresnel zone plate. The Fresnel zone plate mold for hot embossing lithography, with 196 zones, 250 nm outermost zo...
详细信息
A technique that combines electron beam lithography and hot embossing lithography is used to replicate Fresnel zone plate. The Fresnel zone plate mold for hot embossing lithography, with 196 zones, 250 nm outermost zone width and 196 μm diameter, is fabricated using electron beam lithography. The primary experiment results indicate that this method is a high resolution, high throughput and low cost way to replicate pattern in deep submicron scale and has good repeatability and availability.
After more than 30 years research and Development, Proximity X-ray lithography has matured considerably and it has many advantages, such as high resolution, long depth of focus, large process latitude, high throughout...
详细信息
After more than 30 years research and Development, Proximity X-ray lithography has matured considerably and it has many advantages, such as high resolution, long depth of focus, large process latitude, high throughout, and so on. For X-ray mask absorber, if Au metal is selected, it can only be plated and may pollute the silicon-based integrated circuits. TaSi film can be dry etching and does not pollute the silicon-based integrated circuits, it is a potential candidate for X-ray mask absorber. In this paper, the home-made silicon nitride/TaSi X-ray mask fabrication process is described, unlike the conventional fabrication process, after e-beam exposure and development, is etched Inductively Coupled Plasma (ICP) etching based on SF6/CHF3 gas chemistries is used to pattern the TaSi film, using ZEP520 e-beam resist as the barrier layer directly. Primary experimental result demonstrated this X-ray mask fabrication process is feasible.
Potential distribution function, electric field distribution function and electron velocity distribution function inside an ideal planar parallel vacuum microelectronics (P-VME) diode are derived through solving a sim...
详细信息
Potential distribution function, electric field distribution function and electron velocity distribution function inside an ideal planar parallel vacuum microelectronics (P-VME) diode are derived through solving a simplified cubic equation from a three halves power relationship between the anode current density and the anode voltage. The calculated values of the anode voltage, the anode electric field intensity and the anode electron velocity increases to about 50.00%, 73.21% and 22.47%, respectively, when the influence of space charge inside the P-VME diode is considered.
FePt thin films are deposited on SrTiO3, MgO, and a 2 nm-FeOx underlayer on an Si substrate at room temperature and then annealed at elevated temperatures. Studies of the L10 ordering process in each case show that th...
详细信息
暂无评论