检索结果-内蒙古大学图书馆

Nanopillar-forest based surface-enhanced Raman scattering substrates

Science China(Information Sciences) 2014年第8期57卷 230-237页

作者： BAO AiDa MAO HaiYang XIONG JiJun CHEN ZhuoJie OU Wen CHEN DaPeng MOE Key Laboratory of Instrumentation Science & Dynamic Measurement North University of China School of Information and Electronics Beijing Institute of Technology Key Laboratory of Microelectronics Devices & Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences National Key Laboratory of Science and Technology on Micro/Nano Fabrication Institute of MicroelectronicsPeking University

In this work,nanopillar-forest based surface-enhanced Raman scattering substrates were fabricated using a novel *** key technique of the approach is taking advantage of convexes on Poly-Si surfaces as support structures in sidewall *** tip-diameters of the fabricated nanopillars are from 5 to 10 nm,heights are of several microns,and density of the nanopillar-based forests is around 20/μ*** these nanopillar forests,there are plenty of nanoscale *** covered with a thin layer of noble metal,the nanopillar forests exhibit a high SERS-active *** measurement results demonstrate that the nanopillar-forest based SERS substrates have an enhancement factor of an order of 4.62×*** is expected that such SERS substrates may have applications in biological monitoring and chemical detection.

关键词： surface-enhanced Raman scattering(SERS) nanopillar forests sidewall technology Poly-Si films electromagnetic field distributions

来源：评论

学校读者我要写书评

暂无评论

Improved Operation Characteristics for Nonvolatile Charge-Trapping Memory Capacitors with High-κ Dielectrics and SiGe Epitaxial Substrates

引用

Chinese Physics Letters 2017年第9期34卷 95-99页

作者： Zhao-Zhao Hou Gui-Lei Wang Jin-Juan Xiang Jia-Xin Yao Zhen-Hua Wu Qing-Zhu Zhang Hua-Xiang Yin Key Laboratory of Microelectronics Devices&Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029 University of Chinese Academy of Sciences Beijing 100049

A novel high-κ~ A1203/HfO2/AI203 nanolaminate charge trapping memory capacitor structure based on SiGe substrates with low interface densities is successfully fabricated and investigated. The memory capacitor exhibits excellent program-erasable characteristics. A large memory window of ~4 V, a small leakage current density of ~2 ×10-6 Acre-2 at a gate voltage of 7V, a high charge trapping density of 1.42 × 1013 cm-2 at a working vo]tage of 4-10 V and good retention characteristics are observed. Furthermore, the programming （△ VFB = 2.8 V at 10 V for 10μs） and erasing speeds （△VFB =-1.7 V at -10 V for 10μs） of the fabricated capacitor based on SiGe substrates are significantly improved as compared with counterparts reported earlier. It is concluded that the high-κ Al2O3/HfO2/Al2O3 nanolaminate charge trapping capacitor structure based on SiGe substrates is a promising candidate for future nano-scaled nonvolatile flash memory applications.

关键词： Dielectrics and SiGe Epitaxial Substrates Improved Operation Characteristics for Nonvolatile Charge-Trapping Memory Capacitors with High

来源：评论

学校读者我要写书评

暂无评论

Electric dipole formation at high-k dielectric/SiO_2 interface

引用

Journal of Semiconductors 2015年第3期36卷 150-152页

作者：韩锴王晓磊杨红王文武 Department of Physics and Electronic Science Weifang University Key Laboratory of Microelectronics Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences

The formation of an electric dipole at the high-k/SiO2 interface is quantitatively analyzed. The band lineups and physical origin of dipole formation at the high-k/SiO2 interface are explained by the dielectric contact induced gap states （DCIGS）. The charge neutrality level （CNL） of the DCIGS, which represents a distribution of high-k and SiO2 contact induced gap states, is utilized to study the dipole moment. The charge transfer due to different CNLs of high-k and SiO2 is considered as the dominant origin of dipole formation. The theoretically calculated dipole strengths ofhigh-k/SiO2 systems based on this model are in good agreement with the experimental data.

关键词： high-k dielectric band alignment interface dipole

来源：评论

学校读者我要写书评

暂无评论

Investigation on the passivation,band alignment,gate charge,and mobility degradation of the Ge MOSFET with a GeO/Al;O;gate stack by ozone oxidation

引用

Journal of Semiconductors 2022年第1期43卷 69-80页

作者： Lixing Zhou Jinjuan Xiang Xiaolei Wang Wenwu Wang Faculty of Information Technology School of MicroelectronicsBeijing University of TechnologyBeijing 100124China Key Laboratory of Microelectronics Devices&Integrated Technology Institute of Microelectronics of Chinese Academy of SciencesBeijing 100029China

Ge has been an alternative channel material for the performance enhancement of complementary metal-oxide-semiconductor(CMOS)technology applications because of its high carrier mobility and superior compatibility with Si CMOS *** gate structure plays a key role on the electrical *** this paper,the property of Ge MOSFET with Al_(2)O_(3)/GeO_(x)/Ge stack by ozone oxidation is *** GeO_(x)passivation mechanism by ozone oxidation and band align-ment of Al2O3/GeO_(x)/Ge stack is *** addition,the charge distribution in the gate stack and remote Coulomb scatter-ing on carrier mobility is also *** surface passivation is mainly attributed to the high oxidation state of *** en-ergy band alignment is well explained by the gap state *** charge distribution is quantitatively characterized and it is found that the gate charges make a great degradation on carrier *** investigations help to provide an impressive un-derstanding and a possible instructive method to improve the performance of Ge devices.

关键词： Ge MOSFET ozone oxidation gate charges mobility

来源：评论

学校读者我要写书评

暂无评论

Optical coupling optimization in a novel metal-semiconductor-metal ultraviolet photodetector based on semicircular Schottky electrodes

引用

Journal of Semiconductors 2012年第5期33卷 74-79页

作者：陈斌杨银堂柴常春王宁马振洋谢宣蓉 Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices School of MicroelectronicsXidian University No.771 Institute of Microelectronics Technology

A novel semicircular electrode metal-semiconductor-metal（SEMSM） ultraviolet detector is modeled, investigated and characterized with a self-consistent numerical calculation *** the purpose of model and performance verification,a comprehensive comparison of the SEMSM detector and a conventional electrode MSM detector is carried out with experimental *** results indicate that the physical models are able to predict the enhanced device ***,the structural parameters have been adjusted appropriately to optimize the SEMSM *** findings show that a device with a 2μm finger radius and 3 /mi spacing exhibits outstanding characteristics in terms of a peak responsivity of 0.177 A/W at 290 nm,a maximum external quantum efficiency of over 75%,and a comparable normalized photocurrent to dark current ratio of 1.192×10^（-1） W^（-1） at 0.3 V bias. These results demonstrate that the SEMSM detector has excellent performance for optoelectronic integrated circuit applications.

关键词： semicircular contact MSM ultraviolet photodetector optimization

来源：评论

学校读者我要写书评

暂无评论

Degraded model of radiation-induced acceptor defects for GaN-based high electron mobility transistors(HEMTs)

引用

Chinese Physics B 2009年第7期18卷 2912-2919页

作者：范隆郝跃赵元富张进城高志远李培咸 Beijing Microelectronics Technology Institute The School of Microelectronics Xidian University Key Laboratory of Fundamental Science for National Defense of Wide Bandgap Semiconductor Technology Xidian University Key Laboratory for Wide Band-gap Semiconductor Materials and Devices of Ministry of Education Xidian University

Using depletion approximation theory and introducing acceptor defects which can characterize radiation induced deep-level defects in AlGaN/GaN heterostructures,we set up a radiation damage model of AlGaN/GaN high electron mobility transistor （HEMT） to separately simulate the effects of several main radiation damage mechanisms and the complete radiation damage effect simultaneously considering the degradation in mobility. Our calculated results,consistent with the experimental results,indicate that thin AlGaN barrier layer,high Al content and high doping concentration are favourable for restraining the shifts of threshold voltage in the AlGaN/GaN HEMT;when the acceptor concentration induced is less than 10^14cm-3,the shifts in threshold voltage are not obvious;only when the acceptor concentration induced is higher than 10^16cm-3,will the shifts of threshold voltage remarkably increase;the increase of threshold voltage,resulting from radiation induced acceptor,mainly contributes to the degradation in drain saturation current of the current-voltage （Ⅰ-Ⅴ） characteristic,but has no effect on the transconductance in the saturation area.

关键词： GaN-based high electron mobility transistor （HEMT） radiation acceptor defects

来源：评论

学校读者我要写书评

暂无评论

Study of magnetic field expansion using a plasma generator for space radiation active protection

引用

Chinese Physics C 2013年第9期37卷 99-103页

作者：贾向红贾少霞许峰白延强万军刘洪涛蒋睿马洪波王守国 State Key Laboratory of Space Medicine Fundamentals and Application Chinese Astronaut Research and Training Center Key Laboratory of Microelectronics Devices & Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences

There are many active protecting methods including Electrostatic Fields, Confined Magnetic Field, Unconfined Magnetic Field and Plasma Shielding etc. for defending the high-energy solar particle events （SPE） and Galactic Cosmic Rays （GCR） in deep space exploration. The concept of using cold plasma to expand a magnetic field is the best one of all possible methods so far. The magnetic field expansion caused by plasma can improve its protective efficiency of space particles. One kind of plasma generator has been developed and installed into the cylindrical permanent magnet in the eccentric. A plasma stream is produced using a helical-shaped antenna driven by a radio-frequency （RF） power supply of 13.56 MHz, which exits from both sides of the magnet and makes the magnetic field expand on one side. The discharging belts phenomenon is similar to the Earth＇s radiation belt, but the mechanism has yet to be understood. A magnetic probe is used to measure the magnetic field expansion distributions, and the results indicate that the magnetic field intensity increases under higher increments of the discharge power.

关键词： plasma stream magnetic field expansion space radiation active protection

来源：评论

学校读者我要写书评

暂无评论

Quantum capacitance impact on low-frequency noise in MoS2 transistors

引用

Physical Review Applied 2025年第5期23卷 054012-054012页

作者： Long Chen Zheyi Lu Yu Song Runtong Guo Hongfu Li Jean-Pierre Raskin Denis Flandre Yuan Liu Lei Liao Guoli Li Key Laboratory for Micro/Nano-Optoelectronic Devices of Ministry of Education School of Physics and Electronics Hunan University Changsha 410082 China Research Institute of Hunan University in Chongqing Chongqing 401135 China Institute of Information and Communication Technologies Electronics and Applied Mathematics Université catholique de Louvain Louvain-la-Neuve 1348 Belgium National Key Laboratory of Power Semiconductor and Integration Technology Engineering Research Center of Advanced Semiconductor Technology and Application of Ministry of Education College of Semiconductors (College of Integrated Circuits) Hunan University Changsha 410082 China

Low-frequency noise (LFN) is a critical figure of merit for characterizing the performance and application limits of electronic devices and circuits. In two-dimensional (2D) material-based transistors, their higher amplitudes of LFN than those of silicon counterparts are generally attributed to the atomically thin body, which is more susceptible to interfacial scattering. However, with advancing miniaturization of 2D transistors, the quantum capacitance (Cq) arising from the confined density of states of the ultrathin channel can impose limitations on electrical performance and inevitably influence the LFN behavior. Herein, to elucidate the fundamental physics of how quantum capacitance impacts LFN, we present a comprehensive study of the LFN characteristics in MoS2 field-effect transistors (FETs). It is found that Cq significantly limits transconductance and carrier density, thereby affecting the LFN performance. For monolayer devices, the drain current fluctuations can be explained by the carrier number fluctuation featuring correlated surface mobility fluctuation, and the normalized noise amplitude (SI/Ids2) becomes effectively suppressed in the subthreshold region while enhanced in accumulation because of the influence of Cq on transconductance efficiency. On the other hand, the LFN characteristics inside multilayer transistors follow Hooge’s mobility fluctuation model and are impacted by Cq mainly in strong accumulation. In this regime, Cq leads to an increment of SI/Ids2 due to the restrained carrier density in semiconductor channels. Our findings provide unique insight into quantum capacitance effects on LFN characteristics in 2D FETs, and can facilitate their device design, performance optimization, and electronic applications.

关键词： Layered semiconductors

来源：评论

学校读者我要写书评

暂无评论

A Hf0.5Zr0.5O2 ferroelectric capacitor-based half-destructive read scheme for computing-in-memory

引用

Science China(Information Sciences) 2023年第5期66卷 303-304页

作者： Yulin ZHAO Yuan WANG Donglin ZHANG Zhongze HAN Qiao HU Xuanzhi LIU Qingting DING Jinhui CHENG Wenjun ZHANG Yue CAO Ruixi ZHOU Qing LUO Jianguo YANG Hangbing LV Key Laboratory of Microelectronics Devices and Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences University of Chinese Academy of Sciences School of Microelectronics University of Science and Technology of China Zhejiang Lab

The emerging non-volatile memories (NVMs), including resistive random access memory (RRAM)[1], phase-change memory (PCM)[2], and ferroelectric random access memory (Fe RAM)[3], have broad application prospects owing to their non-volatility and near-zero static energy consumption. Compared to other NVMs, ferroelectric capacitors(Fe CAPs) ofer advantages in energy consumption and endurance. However, the destructive read operation of capacitors (e.g., DRAMs and Fe CAPs) destroys the stored data.

关键词：

来源：评论

学校读者我要写书评

暂无评论

The impacts of total ionizing dose irradiation on NOR Flash memory 13

The impacts of total ionizing dose irradiation on NOR Flash ...

引用

2016 13th IEEE International Conference on Solid-State and Integrated Circuit technology (ICSICT)

作者： Jinshun Bi Jin Li Lanlong Ji Hongyang Hu Ming Liu Key Laboratory of Microelectronics Devices ＆ Integrated Technology Institute of Microelectronics Chinese Academy of Sciences

The impacts of total ionizing dose by cobalt60 on the 4 Mb Serial Peripheral Interface NOR Flash memory are studied in detail. Eletrical parameters degradation and unidirectioanl upsets are demonstrated with physical ... 详细信息

ISBN: (纸本)9781467397209

关键词： Estimation Field programmable gate arrays OFDM Modulation Filtration Clocks Signal processing algorithms

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：