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Vertical Channel-All-Around (CAA) IGZO FET under 50 nm CD with High Read Current of 32.8 A/m (Vth+ 1 V), Well-performed Thermal Stability up to 120 for Low Latency, High-density 2T0C 3D DRAM Application

Vertical Channel-All-Around (CAA) IGZO FET under 50 nm CD wi...

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2022 IEEE Symposium on VLSI technology and Circuits, VLSI technology and Circuits 2022

作者： Duan, Xinlv Huang, Kailiang Feng, Junxiao Sun, Ying Lu, Congyan Chen, Chuanke Jiao, Guangfan Lin, Xinpeng Shao, Jinhai Yin, Shihui Sheng, Jiazhen Wang, Zhaogui Zhang, Wenqiang Chuai, Xichen Niu, Jiebin Wang, Wenwu Wu, Ying Jing, Weiliang Wang, Zhengbo Xu, Jeffrey Yang, Guanhua Geng, Di Li, Ling Liu, Ming Institute of Microelectronics of the Chinese Academy of Sciences Key Laboratory of Microelectronics Devices and Integrated Technology Beijing China Huawei Technologies Co. LTD. China

ISBN: (纸本)9781665497725

For the first time, vertical channel-all-around (CAA) IGZO FET is scaled down to an active footprint of less than 50×50 nm2. With optimized IGZO thickness (-3 nm) and high-K dielectric (HfOx), high current density of 32.8 A/m at Vth +1 V with subthreshold swing of 92 mV/dec is achieved in the IGZO CAA FET with channel length of 55 nm and critical dimension (CD) of 50 nm. Good thermal stability and reliability is also demonstrated by temperature variation tests and positive-bias-temperature-stress (PBTS) from -40 to 120 . Our results show that CAA IGZO FET is a promising candidate for the high-density, high-performance 3D DRAM beyond 1a nodes in the future. © 2022 IEEE.

关键词： Thermodynamic stability

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Compact Modeling of IGZO-based CAA-FETs with Time-zero-instability and BTI Impact on Device and Capacitor-less DRAM Retention Reliability

Compact Modeling of IGZO-based CAA-FETs with Time-zero-insta...

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2022 IEEE Symposium on VLSI technology and Circuits, VLSI technology and Circuits 2022

作者： Guo, Jingrui Sun, Ying Wang, Lingfei Duan, Xinlv Huang, Kailiang Wang, Zhaogui Feng, Junxiao Chen, Qian Huang, Shijie Xu, Lihua Geng, Di Jiao, Guangfan Yin, Shihui Wang, Zhengbo Jing, Weiliang Li, Ling Liu, Ming Imecas Key Laboratory of Microelectronics Devices and Integrated Technology Beijing China Huawei Technologies Co. LTD. China

ISBN: (纸本)9781665497725

This work developed a compact model of the stackable vertical Channel-All-Around (CAA) IGZO FETs, based on carrier trapping dynamics and (inner/outer) surface potential of a cylindrical channel shell. It is calibrated to fabricated devices with geometric effects (e.g., asymmetry Source/Drain (S/D) to Gate (G) overlaps) on turn-on voltage (Von). Besides, temperature (T) effects on Von, leakage current and non-linear contacts were considered from 233 K to 393 K, and such degradation effects contribute to time-zero instability (TZI) on DRAM retention performance. To further understand time dependent reliability (i.e., bias-temperature-instability, BTI), an abnormal PBTI with negative Von shift is studied from the perspective of device physics and is more pronounced than NBTI. By incorporating TZI and BTI in capacitor-less DRAMs, it enables a reliability-aware design technology co-optimization flow characterizing weak cells for scalability of BEOL-compatible 3D integration. © 2022 IEEE.

关键词： Semiconducting indium compounds

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Dual-branch Transformer with Series Decomposition for Long-term Orbit Correction

Dual-branch Transformer with Series Decomposition for Long-t...

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2024 International Technical Meeting of The Institute of Navigation, ITM 2024

作者： Liu, Ziyu Wang, Jingran Zheng, Shaolong Wei, Shiyi Li, Zhenni Xie, Shengli Wang, Mingwei School of Automation Guangdong University of Technology Guangzhou510006 China Guangdong-HongKong-Macao Joint Laboratory for Smart Discrete Manufacturing Guangzhou510006 China 111 Center for Intelligent Batch Manufacturing Based on IoT Technology Guangzhou510006 China Techtotop Microelectronics Technology Co. Ltd Guangzhou510006 China Guangdong Key Laboratory of IoT Information Technology Guangzhou510006 China Key Laboratory of Intelligent Information Processing and System Integration of IoT Ministry of Education China

ISBN: (纸本)9780936406367

Time to First Fix (TTFF) is one of the most important measures of GNSS receiver performance. Under the hot-start mode, the receiver needs only 1 to 2 seconds for positioning. However, under the cold start mode, it takes more than 20 seconds to receive the ephemeris to obtain the accurate satellite position. This is due to the fact that current satellite orbit prediction method cannot provide position information accurately based on the old ephemeris, which is detrimental to fast positioning. To address the above challenge, we propose a novel Transformer-based model for long-term orbit corrections. The model makes full use of the time-series information of historical orbit errors and is able to capture long-term dependencies from orbit error series in different lengths. The predicted orbits can be corrected according to the predicted error components, thereby achieving accurate satellite orbit prediction. Due to the temporal patterns in the orbit error series, the features and information hidden in their complex temporal patterns are often difficult to be extracted and utilised. To tackle the intricate temporal patterns, we introduce an inner series decomposition block to deconstruct the seasonal part and trend-cyclical part from orbit errors series, which also empowers the model with immanent decomposition capacity. In addition, in order to extract the cross-time dependency within the curves as well as the cross-dimension dependency between the curves, we propose the Dual-Branch Attention (DBA) layer to capture the cross-time and cross-dimension dependency. Integrating the proposed series decomposition block and the Dual-Branch Attention(DBA) layer into Transformer, we build a Dual-branch Transformer with series decomposition (DBSD-Transformer) for long-term orbit corrections. Experimental results on satellite orbit error data in 2022 from the BeiDou MEO-10 satellite show the effectiveness of our method. Compared to the prediction method based on the Kepler model, t

关键词： Orbits

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Improving NLOS/LOS Classification Accuracy in Urban Canyon Based on Channel-Independent Patch Transformer with Temporal Information

Improving NLOS/LOS Classification Accuracy in Urban Canyon B...

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2024 International Technical Meeting of The Institute of Navigation, ITM 2024

作者： Chen, Jiajun Wang, Jingran Zheng, Shaolong Liu, Yujie Li, Zhenni Xie, Shengli Wang, Qianming School of Automation Guangdong University of Technology Guangzhou510006 China Guangdong-HongKong-Macao Joint Laboratory for Smart Discrete Manufacturing Guangzhou510006 China 111 Center for Intelligent Batch Manufacturing Based on IoT Technology Guangzhou510006 China Techtotop Microelectronics Technology Co. Ltd Guangzhou510006 China Guangdong Key Laboratory of IoT Information Technology Guangzhou510006 China Key Laboratory of Intelligent Information Processing and System Integration of IoT Ministry of Education China

ISBN: (纸本)9780936406367

The global navigation satellite systems (GNSS) positioning performance is significantly degraded due to the blocking of direct signals and errors caused by reflected signals in urban canyons. Recent studies have used deep learning or machine learning methods to distinguish the line-of-sight(LOS) and non-line-of-sight(NLOS) signals to solve multi-path problems. However, these approaches still face challenges. The visibility of satellites is relatively stable in a short period, but the features of their signals change in varying degrees. Existing methods focus on the visibility identification of satellites at a single epoch, which fails to capture the effect of the temporal features of satellite signals on visibility and ignores the complex associations between satellites at multiple continual epochs. To address the above challenge, this paper develops a novel channel-independent patch transformer neural network with temporal information, for improving the prediction of GNSS satellite visibility. Firstly, to capture the influence of individual satellite features on the classifications of NLOS signals, we adopt the concept of independent channels to disentangle the various satellite features. In this way, we construct temporal variations for each feature and then independently assess the effect of these feature variations on satellite visibility. Secondly, to account for the association of multiple continuous epochs satellites, we partition the constructed temporal window feature sequences into a collection of sub-sequences level patches. This patch-level structural design preserves the semantic associations of multiple epochs satellites while also maintaining the ability to focus across a sufficient number of epochs. Finally, based on the idea of channel independence and patch, we develop a novel channel-independent patch transformer (CIPT) neural network with temporal information for predicting satellite visibility, which can not only learn the effect of individual f

关键词： Satellites

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Fabrication and Performance Research of Silicon Nanosheet Field Effect Transistor Biosensor

Fabrication and Performance Research of Silicon Nanosheet Fi...

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2022 China Semiconductor technology International Conference, CSTIC 2022

作者： Xiong, Enyi Zhang, Zhaohao Zhang, Qingzhu Wei, Shuhua Wei, Qianhui Zhang, Jing Yan, Jiang School of Information Science and Technology North China University of Technology Beijing100144 China Institute of Microelectronics Chinese Academy of Sciences Key Laboratory of Microelectronic Devices and Integration Technology Beijing100029 China State Key Laboratory of Advanced Materials for Smart Sensing Grinm Group Co. Ltd. Beijing100088 China

ISBN: (数字)9781665497589

ISBN: (纸本)9781665497589

Silicon nanowire (SiNW) FET biosensor has made great contributions to chemical and bio-molecular sensing, and is considered to be one of the best candidates for biosensors. However, due to high sensitivity to pH changes of the buffer solution when detecting biomolecules and low binding rate to biomolecules for small area, SiNW FET biosensor still has the problems of high variation and long response time. To solve the problems, In this paper, we investigate the sensing performances of silicon nanosheets (SiNS) FET with different areas, and found that SiNS FET biosensor with large areas can reduce the sensitivity to pH effectively, thus reducing the detection error caused by pH changes and improving sensing accuracy. In addition, by COMSOL simulating, we also found that devices with wide SiNS show higher bonding rate than that of SiNW devices at low analyte concentrations, thereby decreasing the responding time for high-speed detecting. © 2022 IEEE.

关键词： Nanosheets

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Influence of Parasitic Capacitance and Resistance on Performance of 6T-SRAM for Advanced CMOS Circuits Design

Influence of Parasitic Capacitance and Resistance on Perform...

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2022 China Semiconductor technology International Conference, CSTIC 2022

作者： Luo, Yanna Yan, Gangping Cao, Lei Huo, Jiali Zhang, Xuexiang Wei, Yanzhao Tian, Guoliang Zhang, Qingzhu Wu, Zhenhua Yin, Huaxiang Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing100029 China University of Chinese Academy of Sciences Beijing100049 China

ISBN: (数字)9781665497589

ISBN: (纸本)9781665497589

In this paper, the impacts of parasitic capacitance and resistance on the performance of 6T-SRAM are investigated comprehensively by a design-technology co-optimization (DTCO) method and TCAD simulation. It is found that the impact of parasitic capacitance on 6T-SRAM read and write operations is all adverse. However, the influence of parasitic resistance on 6T-SRAM is double-sided and can be used to improve the performance of 6T-SRAM. An optimization strategy of layout and route is proposed for SRAM with high speed, high noise stability or high read and write capabilities. These results provide a useful guidance for the 6T-SRAM layout design toward advanced node CMOS circuits. © 2022 IEEE.

关键词： CMOS integrated circuits

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Active tunable terahertz bandwidth absorber based on single layer graphene

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Communications in Theoretical Physics 2023年第4期75卷 106-113页

作者： Wenxin Li Yingting Yi Hua Yang Shubo Cheng Wenxing Yang Huafeng Zhang Zao Yi Yougen Yi Hailiang Li School of Physics and Optoelectronic Engineering Yangtze UniversityJingzhou 434023China College of Physics and Electronics Central South UniversityChangsha 410083China School of Science Lanzhou University of TechnologyLanzhou 730050China Joint Laboratory for Extreme Conditions Matter Properties Southwest University of Science and TechnologyMianyang 621010China Key Laboratory of Microelectronic Devices&Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China

In this paper,an active tunable terahertz bandwidth absorber based on single-layer graphene is proposed,which consists of a graphene layer,a photo crystal plate,and a gold *** the Fermi energy(Ef)of graphene is 1.5 eV,the absorber shows high absorption in the range of 3.7 THz–8 THz,and the total absorption rate is 96.8%.By exploring the absorption mechanism of the absorber,the absorber shows excellent physical *** absorber also shows good adjustability by changing the Efof *** means that the absorber exhibits excellent tunability by adjusting the physical parameters and Efof the ***,the absorber is polarization independent and insensitive to the incident *** fine characteristics of the absorber mean that the absorber has superior application value in many fields such as biotechnology and space exploration.

关键词： metamaterials active tunable bandwidth absorber terahertz graphene

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Miniaturized silicon-based capacitive six-axis force/torque sensor with large range, high sensitivity, and low crosstalk

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Microsystems & Nanoengineering 2024年第6期10卷 133-149页

作者： Renjie Tan Yong Xia Xiangguang Han Linya Huang Wendi Gao Chen Jia Ping Yang Qijing Lin Shujiang Ding Chenying Wang Libo Zhao State Key Laboratory for Manufacturing Systems Engineering International Joint Laboratory for Micro/Nano Manufacturing and Measurement TechnologiesXi’an Jiaotong University(Yantai)Research Institute for Intelligent Sensing Technology and SystemXi’an Jiaotong University710049 Xi’anChina School of Mechanical Engineering Xi’an Jiaotong UniversityXi’an 710049China School of Instrument Science and Technology Xi’an Jiaotong UniversityXi’an 710049China Electronic Materials Research Laboratory Key Laboratory of the Ministry of EducationSchool of Electronic Science and EngineeringXi’an Jiaotong University710049 Xi’anChina Shandong Laboratory of Yantai Advanced Materials and Green Manufacturing Yantai 265503China Engineering Research Center of Energy Storage Materials and Devices of Ministry of Education National Innovation Platform(Center)for Industry-Education Integration of Energy Storage TechnologySchool of ChemistryXi’an Jiaotong UniversityXi’an 710049China

Miniaturized six-axis force/torque sensors have potential applications in robotic tactile sensing,minimally invasive surgery,and other narrow operating spaces,where currently available commercial sensors cannot meet the requirements because of their large *** this study,a silicon-based capacitive six-axis force/torque sensing chip with a small size of 9.3×9.3×0.98 mm was designed,fabricated,and tested.A sandwich decoupling structure with a symmetrical layered arrangement of S-shaped beams,comb capacitors,and parallel capacitors was employed.A decoupling theory considering eccentricity and nonlinear effects was derived to realize low axial *** proposed S-shaped beams achieved a large measurement range through stress *** results of a coupled multiphysics field finite-element simulation agreed well with those of theoretical *** test results show that the proposed sensing chip can detect six-axis force/torque separately,with all crosstalk errors less than 2.59%*** force and torque measurement ranges can reach as much as 2.5 N and 12.5 N·mm,*** sensing chip also has high sensitivities of 0.52 pF/N and 0.27 pF/(N·mm)for force and torque detection,respectively.

关键词： crosstalk shaped torque

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Suppression of self-pulsing in high power Tm3+-doped fiber laser

Suppression of self-pulsing in high power Tm3+-doped fiber l...

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2023 Advanced Fiber Laser Conference, AFL 2023

作者： Shen, Shiteng Dong, Fanlong Yan, Peiguang Wang, Jingzhang Lue, Qitao Guo, Chunyu Ruan, Shuangchen Shenzhen Key Laboratory of Laser Engineering Guangdong Provincial Key Laboratory of Micro/Nano Optomechatronics Engineering Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province State Key Laboratory of Radio Frequency Heterogeneous Integration College of Physics and Optoelectronic Engineering Shenzhen University Shenzhen518060 China Key Lab. of Adv. Optical Precision Manufacturing Technology of Guangdong Higher Education Institutes Shenzhen Technology University Shenzhen518118 China Han s Laser Technology Industry Group Co. Ltd Shenzhen518057 China

ISBN: (纸本)9781510677661

In this paper, a high power Tm3+-doped fiber laser (TDFL) based on a monolithic master oscillator power amplifier (MOPA) system with the center wavelength is 1940 nm is demonstrated. The maximum laser power was measured to be 200 W with a slope efficiency of 56.2% at the 793 nm pump power of 368.6 W. Power stability of the laser output over 60 min is measured to be ∼0.12%, which indicate a relatively stable laser operation of the TDFL. The output power is limited by the available pump power for the lack of amplified spontaneous emission, parasitic oscillation or self-pulsing effects even at the maximum output power level, showing further power scaling should be possible with increase the pump power. © COPYRIGHT SPIE. Downloading of the abstract is permitted for personal use only.

关键词： Fiber lasers

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Mid-infrared conventional solitons and soliton molecules in a polarization-maintaining fluoride fiber oscillator

Mid-infrared conventional solitons and soliton molecules in ...

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2023 Advanced Fiber Laser Conference, AFL 2023

作者： Zeng, Qinghui Yu, Linpeng Yan, Peiguang Wang, Jinzhang Lue, Qitao Guo, Chunyu Ruan, Shuangchen Shenzhen Key Laboratory of Laser Engineering Guangdong Provincial Key Laboratory of Micro/Nano Optomechatronics Engineering Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province State Key Laboratory of Radio Frequency Heterogeneous Integration College of Physics and Optoelectronic Engineering Shenzhen University Shenzhen518060 China Key Lab. of Adv. Optical Precision Manufacturing Technology of Guangdong Higher Education Institutes Shenzhen Technology University Shenzhen518118 China Han s Laser Technology Industry Group Co. Ltd Shenzhen518057 China

ISBN: (纸本)9781510677661

Mid-infrared conventional solitons and soliton molecules are generated in a polarization-maintaining erbium-doped fluoride fiber oscillator, where a semiconductor saturable absorber is used as the mode locker and a polarization beam splitter is employed for getting linearly polarized output pulses. By rotating the half-wave plate in front of the polarization beam splitter to change the output coupling ratio, the system is switchable between conventional solitons and soliton molecules. conventional solitons with a pulse duration of 120 ps, a maximum average power of 248 mW, and a repetition rate of 44.5 MHz are obtained when the oscillator operates in the single-pulse mode-locked state. By decreasing the output coupling ratio, the operating regime of the oscillator switches to the soliton-molecule mode-locked state, in which soliton-triplets equally distributed at a repetition rate of 44.5 MHz with a signal-to-noise ratio of 78 dB and a temporal separation of 60 ps are obtained. Our work offers a scheme to realize switchable operations between the conventional soliton and the soliton molecule in the mid-infrared polarization-maintaining mode-locked fiber laser. © COPYRIGHT SPIE. Downloading of the abstract is permitted for personal use only.

关键词： Fluorine compounds

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