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检索条件"机构=Key Laboratory of Microelectronics Devices and Integration Technology"
1308 条 记 录,以下是141-150 订阅
排序:
Nanopillar-forest based surface-enhanced Raman scattering substrates
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Science China(Information Sciences) 2014年 第8期57卷 230-237页
作者: BAO AiDa MAO HaiYang XIONG JiJun CHEN ZhuoJie OU Wen CHEN DaPeng MOE Key Laboratory of Instrumentation Science & Dynamic Measurement North University of China School of Information and Electronics Beijing Institute of Technology Key Laboratory of Microelectronics Devices & Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences National Key Laboratory of Science and Technology on Micro/Nano Fabrication Institute of MicroelectronicsPeking University
In this work,nanopillar-forest based surface-enhanced Raman scattering substrates were fabricated using a novel *** key technique of the approach is taking advantage of convexes on Poly-Si surfaces as support structur... 详细信息
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Improved Operation Characteristics for Nonvolatile Charge-Trapping Memory Capacitors with High-κ Dielectrics and SiGe Epitaxial Substrates
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Chinese Physics Letters 2017年 第9期34卷 95-99页
作者: Zhao-Zhao Hou Gui-Lei Wang Jin-Juan Xiang Jia-Xin Yao Zhen-Hua Wu Qing-Zhu Zhang Hua-Xiang Yin Key Laboratory of Microelectronics Devices&Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029 University of Chinese Academy of Sciences Beijing 100049
A novel high-κ~ A1203/HfO2/AI203 nanolaminate charge trapping memory capacitor structure based on SiGe substrates with low interface densities is successfully fabricated and investigated. The memory capacitor exhibit... 详细信息
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Electric dipole formation at high-k dielectric/SiO_2 interface
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Journal of Semiconductors 2015年 第3期36卷 150-152页
作者: 韩锴 王晓磊 杨红 王文武 Department of Physics and Electronic Science Weifang University Key Laboratory of Microelectronics Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences
The formation of an electric dipole at the high-k/SiO2 interface is quantitatively analyzed. The band lineups and physical origin of dipole formation at the high-k/SiO2 interface are explained by the dielectric contac... 详细信息
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Investigation on the passivation,band alignment,gate charge,and mobility degradation of the Ge MOSFET with a GeO/Al;O;gate stack by ozone oxidation
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Journal of Semiconductors 2022年 第1期43卷 69-80页
作者: Lixing Zhou Jinjuan Xiang Xiaolei Wang Wenwu Wang Faculty of Information Technology School of MicroelectronicsBeijing University of TechnologyBeijing 100124China Key Laboratory of Microelectronics Devices&Integrated Technology Institute of Microelectronics of Chinese Academy of SciencesBeijing 100029China
Ge has been an alternative channel material for the performance enhancement of complementary metal-oxide-semiconductor(CMOS)technology applications because of its high carrier mobility and superior compatibility with ... 详细信息
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Optical coupling optimization in a novel metal-semiconductor-metal ultraviolet photodetector based on semicircular Schottky electrodes
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Journal of Semiconductors 2012年 第5期33卷 74-79页
作者: 陈斌 杨银堂 柴常春 王宁 马振洋 谢宣蓉 Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices School of MicroelectronicsXidian University No.771 Institute of Microelectronics Technology
A novel semicircular electrode metal-semiconductor-metal(SEMSM) ultraviolet detector is modeled, investigated and characterized with a self-consistent numerical calculation *** the purpose of model and performance v... 详细信息
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Degraded model of radiation-induced acceptor defects for GaN-based high electron mobility transistors(HEMTs)
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Chinese Physics B 2009年 第7期18卷 2912-2919页
作者: 范隆 郝跃 赵元富 张进城 高志远 李培咸 Beijing Microelectronics Technology Institute The School of Microelectronics Xidian University Key Laboratory of Fundamental Science for National Defense of Wide Bandgap Semiconductor Technology Xidian University Key Laboratory for Wide Band-gap Semiconductor Materials and Devices of Ministry of Education Xidian University
Using depletion approximation theory and introducing acceptor defects which can characterize radiation induced deep-level defects in AlGaN/GaN heterostructures,we set up a radiation damage model of AlGaN/GaN high elec... 详细信息
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Study of magnetic field expansion using a plasma generator for space radiation active protection
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Chinese Physics C 2013年 第9期37卷 99-103页
作者: 贾向红 贾少霞 许峰 白延强 万军 刘洪涛 蒋睿 马洪波 王守国 State Key Laboratory of Space Medicine Fundamentals and Application Chinese Astronaut Research and Training Center Key Laboratory of Microelectronics Devices & Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences
There are many active protecting methods including Electrostatic Fields, Confined Magnetic Field, Unconfined Magnetic Field and Plasma Shielding etc. for defending the high-energy solar particle events (SPE) and Gal... 详细信息
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Quantum capacitance impact on low-frequency noise in MoS2 transistors
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Physical Review Applied 2025年 第5期23卷 054012-054012页
作者: Long Chen Zheyi Lu Yu Song Runtong Guo Hongfu Li Jean-Pierre Raskin Denis Flandre Yuan Liu Lei Liao Guoli Li Key Laboratory for Micro/Nano-Optoelectronic Devices of Ministry of Education School of Physics and Electronics Hunan University Changsha 410082 China Research Institute of Hunan University in Chongqing Chongqing 401135 China Institute of Information and Communication Technologies Electronics and Applied Mathematics Université catholique de Louvain Louvain-la-Neuve 1348 Belgium National Key Laboratory of Power Semiconductor and Integration Technology Engineering Research Center of Advanced Semiconductor Technology and Application of Ministry of Education College of Semiconductors (College of Integrated Circuits) Hunan University Changsha 410082 China
Low-frequency noise (LFN) is a critical figure of merit for characterizing the performance and application limits of electronic devices and circuits. In two-dimensional (2D) material-based transistors, their higher am... 详细信息
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A Hf0.5Zr0.5O2 ferroelectric capacitor-based half-destructive read scheme for computing-in-memory
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Science China(Information Sciences) 2023年 第5期66卷 303-304页
作者: Yulin ZHAO Yuan WANG Donglin ZHANG Zhongze HAN Qiao HU Xuanzhi LIU Qingting DING Jinhui CHENG Wenjun ZHANG Yue CAO Ruixi ZHOU Qing LUO Jianguo YANG Hangbing LV Key Laboratory of Microelectronics Devices and Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences University of Chinese Academy of Sciences School of Microelectronics University of Science and Technology of China Zhejiang Lab
The emerging non-volatile memories (NVMs), including resistive random access memory (RRAM)[1], phase-change memory (PCM)[2], and ferroelectric random access memory (Fe RAM)[3], have broad application prospects owing t...
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The impacts of total ionizing dose irradiation on NOR Flash memory  13
The impacts of total ionizing dose irradiation on NOR Flash ...
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2016 13th IEEE International Conference on Solid-State and Integrated Circuit technology (ICSICT)
作者: Jinshun Bi Jin Li Lanlong Ji Hongyang Hu Ming Liu Key Laboratory of Microelectronics Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences
The impacts of total ionizing dose by cobalt60 on the 4 Mb Serial Peripheral Interface NOR Flash memory are studied in detail. Eletrical parameters degradation and unidirectioanl upsets are demonstrated with physical ... 详细信息
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