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检索条件"机构=Key Laboratory of Microelectronics Devices and Integration Technology"
1327 条 记 录,以下是171-180 订阅
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An AuNPs/Mesoporous NiO/Nickel Foam Nanocomposite as a Miniaturized Electrode for Heavy Metal Detection in Groundwater
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Engineering 2023年 第8期27卷 199-208页
作者: Boyuan Xue Qian Yang Kaidong Xia Zhihong Li George Y.Chen Dayi Zhang Xiaohong Zhou State Key Joint Laboratory of Environment Simulation and Pollution Control School of EnvironmentTsinghua UniversityBeijing 100084China National Key Laboratory of Science and Technology on Micro/Nano Fabrication Institute of MicroelectronicsPeking UniversityBeijing 100871China Shenzhen Key Laboratory of Photonic Devices and Sensing Systems for Internet of Things Guangdong and Hong Kong Joint Research Centre for Optical Fiber SensorsShenzhen UniversityShenzhen 518060China College of New Energy and Environment Jilin UniversityChangchun 130021China The Research Institute of Environmental Innovation(Suzhou) Tsinghua UniversitySuzhou 215000China
Heavy metals,notably Pb2+and Cu^(2+),are some of the most persistent contaminants found in *** monitoring of these metals,which relies on efficient,sensitive,cost-effective,and reliable methods,is a *** present a nano... 详细信息
来源: 评论
Scaling Dual-Gate Ultra-thin a-IGZO FET to 30 nm Channel Length with Record-high Gm,maxof 559 S/m at VDS=1 V, Record-low DIBL of 10 mV/V and Nearly Ideal SS of 63 mV/dec
Scaling Dual-Gate Ultra-thin a-IGZO FET to 30 nm Channel Len...
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2022 IEEE Symposium on VLSI technology and Circuits, VLSI technology and Circuits 2022
作者: Chen, Kaifei Niu, Jiebin Yang, Guanhua Liu, Menggan Lu, Wendong Liao, Fuxi Huang, Kailiang Duan, XinLv Lu, Congyan Wang, Jiawei Wang, Lingfei Li, Mengmeng Geng, Di Zhao, Chao Wang, Guilei Lu, Nianduan Li, Ling Liu, Ming Chinese Academy of Sciences Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics Beijing China University of Chinese Academy of Sciences Beijing China Beijing Superstring Academy of Memory Technology 100176 China
We experimentally prove that amorphous IGZO FET can be scaled down by connected dual-gate design with enhanced electrostatic control. By connected dual-gate operation and scaled dual stacks, the short channel device (... 详细信息
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Fabrication of Y-cut LiNbO3 Single Crystalline Film and SAW Resonator on Flexible Polyimide Substrate
Fabrication of Y-cut LiNbO3 Single Crystalline Film and SAW ...
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2024 IEEE International Conference on Integrated Circuits, Technologies and Applications, ICTA 2024
作者: Gao, Yizhuo Luo, Wenbo Huang, Shitian Fan, Wei Zhu, Dailei Wang, Xu Pan, Xinqiang Shuai, Yao Wu, Chuangui Zhang, Wanli University of Electronic Science and Technology of China School of Integrated Circuit Science and Engineering Chengdu610054 China University of Electronic Science and Technology of China State Key Laboratory of Electronic Thin Films and Integrated Devices Chengdu610054 China Chongqing Institute of Microelectronics Industry Technology UESTC Chongqing401332 China
Flexible surface acoustic wave (SAW) resonators on single crystal LiNbO3(LN) film have been successfully fabricated using benzocyclobutene bonding and crystal ion slicing technology. The effects of Polyimide (PI) thic... 详细信息
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3D printing in space:from mechanical structures to living tissues
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International Journal of Extreme Manufacturing 2024年 第2期6卷 378-387页
作者: Mao Mao Zijie Meng Xinxin Huang Hui Zhu Lei Wang Xiaoyong Tian Jiankang He Dichen Li Bingheng Lu State Key Laboratory for Manufacturing Systems Engineering Xi’an Jiaotong UniversityXi’an 710049People’s Republic of China National Medical Products Administration(NMPA)Key Laboratory for Research and Evaluation of Additive Manufacturing Medical Devices Xi’an Jiaotong UniversityXi’an 710049People’s Republic of China National Innovation Platform(Center)for Industry-Education Integration of Medical Technology Xi’an Jiaotong UniversityXi’an 710049People’s Republic of China Frontier Institute of Science and Technology Xi’an Jiaotong UniversityXi’an 710049People’s Republic of China National Innovation Institute of Additive Manufacturing Xi’an 710000People’s Republic of China
3D printing stands at the forefront of transforming space exploration,offering unprecedented on-demand and rapid manufacturing *** adeptly addresses challenges such as mass reduction,intricate component fabrication,an... 详细信息
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3D Reservoir Computing with High Area Efficiency (5.12 TOPS/mm2) Implemented by 3D Dynamic Memristor Array for Temporal Signal Processing
3D Reservoir Computing with High Area Efficiency (5.12 TOPS/...
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2022 IEEE Symposium on VLSI technology and Circuits, VLSI technology and Circuits 2022
作者: Sun, Wenxuan Zhang, Woyu Yu, Jie Li, Yi Guo, Zeyu Lai, Jinru Dong, Danian Zheng, Xu Wang, Fei Fan, Shaoyang Xu, Xiaoxin Shang, Dashan Liu, Ming Institute of Microelectronics of Chinese Academy of Sciences Key Laboratory of Microelectronic Devices and Integrated Technology Beijing China University of Chinese Academy of Sciences Beijing China University of Science and Technology of China School of Microelectronics China
In this work, we realized a three-dimensional (3D) reservoir computing (RC) by utilizing the I-V nonlinearity and short-term memory of the dynamic memristor in 4-layer vertical array. The cycle-to-cycle variation of t... 详细信息
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Flash-based in-memory computing for stochastic computing in image edge detection
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Journal of Semiconductors 2023年 第5期44卷 145-149页
作者: Zhaohui Sun Yang Feng Peng Guo Zheng Dong Junyu Zhang Jing Liu Xuepeng Zhan Jixuan Wu Jiezhi Chen School of Information Science and Engineering(ISE) Shandong UniversityQingdao 266000China Shandong Sinochip Semiconductors Co.Ltd Jinan 250101China Neumem Co. LtdHefei 230088China Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics of Chinese Academy of SciencesBeijing 100029China
The“memory wall”of traditional von Neumann computing systems severely restricts the efficiency of data-intensive task execution,while in-memory computing(IMC)architecture is a promising approach to breaking the *** ... 详细信息
来源: 评论
Methods to improve the PCM yield of 12µm vanadium oxide uncooled infrared detector mass production process on 200mm Wafers  10
Methods to improve the PCM yield of 12µm vanadium oxide unc...
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10th Symposium on Novel Optoelectronic Detection technology and Applications
作者: Ning, Ning Zhou, HongXi Zhang, QiYu Gong, XiHuai Cai, ShengDong Si, Jing Peng, Pan Peng, LuLu Pan, BoJin Jiang, YaDong School of Optoelectronic Science and Engineering University of Electronic Science and Technology of China Chengdu610054 China State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu610054 China United Microelectronics Center Co. Ltd. Chongqing401332 China
To address the technological challenges associated with mass production of 12 µm vanadium oxide (VOx) uncooled infrared detectors on the 200 mm fabrication platform, research efforts were focused on enhancing the... 详细信息
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Enhancing the Avalanche Ionization Integral to 0.24 in GaN Schottky Barrier Diodes Utilizing a Self-Aligned Anode Structure
Enhancing the Avalanche Ionization Integral to 0.24 in GaN S...
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IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)
作者: Jianhua Zhou Lin’An Yang Xuan Huang Xinyi Wang Xiaohua Ma Yue Hao State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology School of Microelectronics Xidian University Xi’an China
we have experimentally investigated gallium nitride (GaN) Schottky barrier diodes including a self-aligned anode structure, exhibiting superior avalanche breakdown capability. The results reveal that the self-aligned ... 详细信息
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A Ku-Band Broadband High-Efficiency GaAs MMIC Power Amplifier
A Ku-Band Broadband High-Efficiency GaAs MMIC Power Amplifie...
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International Conference on Microwave and Millimeter Wave technology Proceedings
作者: Guanghai Yao Huanhuan Jia Ziyue Zhao Yang Lu Chupeng Yi Xin Liu Ting Feng Lin-an Yang Xiaohua Ma State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology School of Microelectronics Xidian University Xi'an China
This work uses $0.25-\mu \mathrm{m}$ GaAs pHEMT technology to design a 11.7-17.6 GHz broadband high-efficiency monolithic microwave integrated circuit (MMIC) amplifier. An equivalent impedance model matching technol... 详细信息
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A 3.3-3.7 GHz High-Linearity and Large-Backoff Doherty Amplifier
A 3.3-3.7 GHz High-Linearity and Large-Backoff Doherty Ampli...
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International Conference on Microwave and Millimeter Wave technology Proceedings
作者: Zexiang Li Chupeng Yi Yang Lu Ziyue Zhao Xin Liu Ting Feng Xiaohua Ma State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology School of Microelectronics Xidian University Xi'an China
An asymmetric Doherty power amplifier with saturated output power greater than 35 dBm, amplitude-to-phase distortion (AM-PM) less than 5 and power back-off of 9 dB is designed based on the 0.25-μm GaN process. To enh... 详细信息
来源: 评论