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arXiv 2025年

作者： Liu, Pu Cui, Chaoxi Li, Lei Li, Runze Xu, Dong-Hui Yu, Zhi-Ming School of Microelectronics and Physics Hunan University of Technology and Business Changsha410205 China School of Physics Beijing Institute of Technology Beijing100081 China Research Center for Quantum Physics and Technologies Inner Mongolia University Hohhot010021 China School of Physical Science and Technology Inner Mongolia University Hohhot010021 China Department of Physics Chongqing Key Laboratory for Strongly Coupled Physics Chongqing University Chongqing400044 China Center of Quantum Materials and Devices Chongqing University Chongqing400044 China International Center for Quantum Materials Beijing Institute of Technology Zhuhai519000 China

Dynamic control of topological properties in materials is central to modern condensed matter physics, and Floquet engineering, utilizing periodic light fields, provides a promising avenue. Here, we use Floquet theory to theoretically study the topological response of a Z2 nodal line semimetal (NLSM) when driven by circularly polarized light (CPL). We demonstrate that the direction of CPL irradiation critically dictates the resulting topological phase transitions. Specifically, when light is incident perpendicular to the nodal line plane, increasing the light amplitude induces two successive topological phase transitions: first, from the Z2 NLSM to a vortex NLSM, a rare and intriguing topological state;and second, a transition from the vortex NLSM to a semimetal with a pair of Weyl points (WPs). In stark contrast, irradiation along other directions directly transforms the Z2 nodal line into a pair of WPs. We further investigate the transport properties of the Floquet Z2 NLSM, focusing on the anomalous and planar Hall effects. The anomalous Hall effect exhibits a direction-dependent amplitude variation, deviating from conventional two-band NLSM behavior. Importantly, we reveal a significant and tunable planar Hall effect, a phenomenon largely unexplored in Floquet topological materials, which is highly sensitive to both light amplitude and direction. Our findings not only present a novel route to realize the vortex NLSM, but also establish an efficient way to control Hall transport phenomena in Z2 NLSMs. Copyright © 2025, The Authors. All rights reserved.

关键词： Irradiation

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Recent developments in nonferrous metals and related materials for biomedical applications in China:a review

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Rare Metals 2022年第5期41卷 1410-1433页

作者： Hai-Ling Tu Hong-Bin Zhao Yan-Yan Fan Qing-Zhu Zhang State Key Laboratory of Advanced Materials for Smart Sensing GRINM Group Co.Ltd.Beijing 100088China China Academy of Space Technology Beijing 100094China Key Laboratory of Microelectronics Devices&Integrated Technology Institute of MicroelectronicsCASBeijing 100029China

Biomedical materials have received increasing attention in recent decades and have been used in medical applications to advance patient care,such as prosthetic implants,tissue repair and regeneration,drug delivery systems,pharmaceutical or biological therapy products,and sensitive diagnostic *** different types of biomedical materials,nonferrous metals and related materials(NMRMs)are important and attractive *** updating of biomedical NMRMs and devices heavily relies on original research and applicationoriented ***,we provide recent research findings and succinct insights into the developments in NMRMs for biomedical applications in China,including the use of titanium,magnesium,copper,zinc,cobalt,zirconium,hafnium,niobium,rhenium,tantalum,tungsten,silver,gold,platinum,palladium,their alloys and compounds,rare earths,high-entropy alloys,and liquid ***,the literature review concludes with several possible directions of NMRMs for new and future developments in biomedical engineering.

关键词： Nonferrous metal Biomedical Implants In vitro and in vivo Imaging Cancer treatment

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Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS technology Node and Beyond 1st ed. 2019

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丛书名： Springer Theses

2019年

作者： Guilei Wang

This thesis presents the SiGe source and drain (S/D) technology in the context of advanced CMOS, and addresses both device processing and epitaxy modelling.

ISBN: (数字)9789811500466

ISBN: (纸本)9789811500459

This thesis presents the SiGe source and drain (S/D) technology in the context of advanced CMOS, and addresses both device processing and epitaxy modelling.

关键词： Semiconductors Electronic Circuits and Systems Microsystems and MEMS

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A two-dimensional analytical model of fully depleted asymmetrical dual material gate double-gate strained-Si MOSFETs

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Journal of Semiconductors 2011年第4期32卷 70-76页

作者：李劲刘红侠袁博曹磊李斌 Key Laboratory of Ministry of Education for Wide Bandgap Semiconductor Devices School of MicroelectronicsXidian University School of Information and Electrical Engineering Hunan University of Science and Technology

On the basis of the exact resultant solution of two dimensional Poisson’s equations,a new accurate two-dimensional analytical model comprising surface channel potentials,a surface channel electric field and a threshold voltage for fully depleted asymmetrical dual material gate double-gate strained-Si MOSFETs is successfully developed. The model shows its validity by good agreement with the simulated results from a two-dimensional numerical *** offering a physical insight into device physics,the model provides basic design guidance for fully depleted asymmetrical dual material gate double-gate strained-Si MOSFETs.

关键词： dual material gate double-gate MOSFET strained-Si short-channel effect the drain-induced barrier-lowering

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Quantum transport for the gate-length scaling limit of Si nanowire field-effect transistors based on calibrated k⋅p Hamiltonian parameters

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Physical Review Applied 2025年第3期23卷 034049-034049页

作者： Guohui Zhan Tongshuai Zhu Jiaxin Yao Kun Luo Huaixiang Yin Shengli Zhang Zhenhua Wu Center for Quantum Matter School of Physics Zhejiang University Hangzhou 310058 Zhejiang China University of Chinese Academy of Sciences 100049 Beijing China Institute of Microelectronics Chinese Academy of Sciences 100029 Beijing China College of Science China University of Petroleum (East China) Qingdao 266580 Shandong China School of Materials Science and Engineering China University of Petroleum (East China) Qingdao 266580 Shandong China Key Laboratory of Advanced Display Materials and Devices College of Material Science and Engineering Nanjing University of Science and Technology Nanjing 210094 Jiangsu China

We present a comprehensive investigation of quantum transport in silicon nanowire field-effect transistors (SiNWFETs) at the scaling limit. The Si bulk k⋅p Hamiltonian parameters are rendered invalid at smaller scales due to pronounced quantum confinement effects. Consequently, nanowire k⋅p Hamiltonian parameters are meticulously calibrated with the use of first-principles HSE06 band structures through the fast least-squares method. On the basis of the nonequilibrium Green’s function formalism, we then systematically analyze the performance limits of gate-all-around SiNWFETs under various gate lengths. With diminishing gate lengths, quantum tunneling from source to drain intensifies, leading to a degradation in subthreshold swing. Our findings reveal that the gate-length scaling limit for n-type devices is numerically larger than for p-type devices, and distinct gate scaling limits are elucidated for various cross-section sizes; for instance, the ultimate scaling limit of Si nanowires of 4×4nm2 cross section is approximately 10 nm.

关键词： Nanowires

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A photomemory by selective-assembling hybrid porphyrin-silicon nanowire field-effect transistor

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Science China(Information Sciences) 2020年第6期63卷 253-255页

作者： Gong CHEN Bocheng YU Xiaokang LI Xiaoqiao DONG Xiaoyan XU Zhihong LI Ru HUANG Ming LI Key Laboratory of Microelectronic Devices and Circuits(MOE) Institute of MicroelectronicsPeking University National Key Laboratory of Science and Technology on Micro/Nano Fabrication Peking University Faculty of Information Technology Beijing University of Technology

Dear editor,Recently, the integration of photosensitive material and electronic nanodevice has been the center of attention with Internet of things (IoT)technology development [1–3]. The immobilization of such photoactive molecules on the semiconductor surface was necessarily adopted to employ their photoelectric characteristics which can be observed in the solution. Porphyrin-based hybrid transistors have emerged as promising candidates for photonic sensing application due to the

关键词： A photomemory by selective-assembling hybrid porphyrin-silicon nanowire field-effect transistor

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Schottky forward current transport mechanisms in AlGaN/GaN HEMTs over a wide temperature range

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Chinese Physics B 2014年第9期23卷 409-413页

作者：武玫郑大勇王媛陈伟伟张凯马晓华张进成郝跃 School of Microelectronics Xidian University Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices School of MicroelectronicsXidian University The Fifth Electronics Research Institute of Ministry of Industry and Information Technology

The behavior of Schottky contacts in AlGaN/GaN high electron mobility transistors （HEMTs） is investigated by temperature-dependent current-voltage （T-I-V） measurements from 300 K to 473 K. The ideality factor and barrier height determined based on the thermionic emission （TE） theory are found to be strong functions of temperature, while present a great deviation from the theoretical value, which can be expounded by the barrier height inhomogeneities. In order to determine the forward current transport mechanisms, the experimental data are analyzed using numerical fitting method, considering the temperature-dependent series resistance. It is observed that the current flow at room temperature can be attributed to the tunneling mechanism, while thermionic emission current gains a growing proportion with an increase in temperature. Finally, the effective barrier height is derived based on the extracted thermionic emission component, and an evaluation of the density of dislocations is made from the I-V characteristics, giving a value of 1.49 × 10^7 cm^-2.

关键词： AlGaN/GaN HEMTs Schottky contacts forward current transport mechanism temperature dependence

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Influence of an ALD TiN capping layer on the PBTI characteristics of n-FinFET with ALD HfO2/TiN-capping/TiAl gate stacks

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Science China(Information Sciences) 2020年第2期63卷 248-250页

作者： Hong YANG Luwei QI Yanbo ZHANG Bo TANG Qianqian LIU Hao XU Xueli MA Xiaolei WANG Yongliang LI Huaxiang YIN Junfeng LI Huilong ZHU Chao ZHAO Wenwu WANG Tianchun YE Key Laboratory of Microelectronics Devices & Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences National Space Science Center Chinese Academy of Sciences School of Microelectronics University of Chinese Academy of Sciences

Dear editor,High k/metal gate (HKMG) stacks with fully gatelast processing have become the primary solution for sub-22-nm volume manufacturing with the development of complementary oxide semiconductor(CMOS) technology [1]. In the HKMG stack, titanium nitride (TiN) is observed to play an important role as a work-function metal and an HK

关键词： red Influence of an ALD TiN capping layer on the PBTI characteristics of n-FinFET with ALD HfO2/TiN-capping/TiAl gate stacks ALD FinFET

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Fabrication and Characterization of 1700 V 4H-SiC Vertical Double-Implanted Metal-Oxide-Semiconductor Field-Effect Transistors

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Chinese Physics Letters 2015年第12期32卷 109-112页

作者：申华军唐亚超彭朝阳邓小川白云王弋宇李诚瞻刘可安刘新宇 Key Laboratory of Microelectronics Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 Microwave Device and IC Department Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu 610054 Zhuzhou CSR Times Electric Co. LTD Zhuzhou 412001

The fabrication and characterization of 1700 V 7 A 4H-SiC vertical double-implanted metal-oxide-semiconductor field-effect transistors （VDMOSFETs） are reported. The drift layer is 17μm in thickness with 5 × 10^15 cm^-3 n-type doping, and the channel length is 1μm. The MOSFETs show a peak mobility of 17cm2/V.s and a typical threshold voltage of 3 V. The active area of 0.028cm2 delivers a forward drain current of 7A at Vcs = 22 V and VDS= 15 V. The specific on-resistance （Ron,sv） is 18mΩ.cm2 at VGS= 22 V and the blocking voltage is 1975 V （IDS 〈 lOOnA） at VGS = 0 V.

关键词： SiC Fabrication and Characterization of 1700 V 4H-SiC Vertical Double-Implanted Metal-Oxide-Semiconductor Field-Effect Transistors VGS VDS MOSFET

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Recent advances in phenothiazine-based dyes for dye-sensitized solar cells

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Chinese Chemical Letters 2016年第8期27卷 1304-1318页

作者： Jun-Sheng Luo Zhong-Quan Wan Chun-Yang Jia State Key Laboratory of Electronic Thin Films and Integrated Devices School of Microelectronics and Solid-State ElectronicsUniversity of Electronic Science and Technology of China

Dye-sensitized solar cells（DSSCs） have attracted significant attention as alternatives to conventional silicon-based solar cells owing to their low-cost production,facile fabrication,excellent stability and high power conversion efficiency（PCE）.The dye molecule is one of the key components in DSSCs since it significant influence on the PCE,charge separation,light-harvesting,as well as the device *** various dyes,easily tunable phenothiazine-based dyes hold a large proportion and achieve impressive photovoltaic *** class of dyes not only has superiorly non-planar butterfly structure but also possesses excellent electron donating ability and large π conjugated *** review summarized recent developments in the phenothiazine dyes,including small molecule phenothiazine dyes,polymer phenothiazine dyes and phenothiazine dyes for co-sensitization,especially focused on the developments and design concepts of small molecule phenothiazine dyes,as well as the correlation between molecular structures and the photovoltaic performances.

关键词： Dye-sensitized solar cells Molecular engineering Small molecule phenothiazine dyes Polymer phenothiazine dyes Co-sensitization Power conversion efficiency

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