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3D printing in space:from mechanical structures to living tissues

International Journal of Extreme Manufacturing 2024年第2期6卷 378-387页

作者： Mao Mao Zijie Meng Xinxin Huang Hui Zhu Lei Wang Xiaoyong Tian Jiankang He Dichen Li Bingheng Lu State Key Laboratory for Manufacturing Systems Engineering Xi’an Jiaotong UniversityXi’an 710049People’s Republic of China National Medical Products Administration(NMPA)Key Laboratory for Research and Evaluation of Additive Manufacturing Medical Devices Xi’an Jiaotong UniversityXi’an 710049People’s Republic of China National Innovation Platform(Center)for Industry-Education Integration of Medical Technology Xi’an Jiaotong UniversityXi’an 710049People’s Republic of China Frontier Institute of Science and Technology Xi’an Jiaotong UniversityXi’an 710049People’s Republic of China National Innovation Institute of Additive Manufacturing Xi’an 710000People’s Republic of China

3D printing stands at the forefront of transforming space exploration,offering unprecedented on-demand and rapid manufacturing *** adeptly addresses challenges such as mass reduction,intricate component fabrication,and resource *** the obstacles posed by microgravity and extreme environments,continual advancements underscore the pivotal role of 3D printing in aerospace *** its primary function of producing space structures,3D printing contributes significantly to progress in electronics,biomedicine,and resource *** perspective delves into the technological advantages,environmental challenges,development status,and opportunities of 3D printing in *** its crucial impact,we anticipate that 3D printing will unlock innovative solutions,reshape manufacturing practices,and foster self-sufficiency in future space endeavors.

关键词： 3D printing in space space manufacturing microgravity

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3D Reservoir Computing with High Area Efficiency (5.12 TOPS/mm2) Implemented by 3D Dynamic Memristor Array for Temporal Signal Processing

3D Reservoir Computing with High Area Efficiency (5.12 TOPS/...

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2022 IEEE Symposium on VLSI technology and Circuits, VLSI technology and Circuits 2022

作者： Sun, Wenxuan Zhang, Woyu Yu, Jie Li, Yi Guo, Zeyu Lai, Jinru Dong, Danian Zheng, Xu Wang, Fei Fan, Shaoyang Xu, Xiaoxin Shang, Dashan Liu, Ming Institute of Microelectronics of Chinese Academy of Sciences Key Laboratory of Microelectronic Devices and Integrated Technology Beijing China University of Chinese Academy of Sciences Beijing China University of Science and Technology of China School of Microelectronics China

ISBN: (纸本)9781665497725

In this work, we realized a three-dimensional (3D) reservoir computing (RC) by utilizing the I-V nonlinearity and short-term memory of the dynamic memristor in 4-layer vertical array. The cycle-to-cycle variation of the dynamic reservoir is improved by parallel memristor configuration. The dimensionality of the reservoir space is increased by input strategy design. After the hardware-software co-optimization, the proposed 3D RC system exhibits high recognition accuracy (90%), low energy consumption (-0.78 pJ /operation), and high area efficiency (5.12 TOPS/mm2). © 2022 IEEE.

关键词： Memristors

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Flash-based in-memory computing for stochastic computing in image edge detection

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Journal of Semiconductors 2023年第5期44卷 145-149页

作者： Zhaohui Sun Yang Feng Peng Guo Zheng Dong Junyu Zhang Jing Liu Xuepeng Zhan Jixuan Wu Jiezhi Chen School of Information Science and Engineering(ISE) Shandong UniversityQingdao 266000China Shandong Sinochip Semiconductors Co.Ltd Jinan 250101China Neumem Co. LtdHefei 230088China Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics of Chinese Academy of SciencesBeijing 100029China

The“memory wall”of traditional von Neumann computing systems severely restricts the efficiency of data-intensive task execution,while in-memory computing(IMC)architecture is a promising approach to breaking the *** variations and instability in ultra-scaled memory cells seriously degrade the calculation accuracy in IMC architectures,stochastic computing(SC)can compensate for these shortcomings due to its low sensitivity to cell ***,massive parallel computing can be processed to improve the speed and efficiency of the *** this paper,by designing logic functions in NOR flash arrays,SC in IMC for the image edge detection is realized,demonstrating ultra-low computational complexity and power consumption(25.5 fJ/pixel at 2-bit sequence length).More impressively,the noise immunity is 6 times higher than that of the traditional binary method,showing good tolerances to cell variation and reliability degradation when implementing massive parallel computation in the array.

关键词： in-memory computing stochastic computing NOR flash memory image edge detection

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Dynamic tuning of terahertz atomic lattice vibration via cross-scale mode coupling to nanomechanical resonance in WSe2 membranes

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Microsystems & Nanoengineering 2025年第1期11卷 313-320页

作者： Bo Xu Zejuan Zhang Jiaze Qin Jiaqi Wu Luming Wang Jiankai Zhu Chenyin Jiao Wanli Zhang Juan Xia Zenghui Wang Institute of Fundamental and Frontier Sciences University of Electronic Science and Technology of ChinaChengdu 610054China Hubei Key Laboratory of Micro-Nanoelectronic Materials and Devices Hubei UniversityWuhan 430062China State Key Laboratory of Precision Measuring Technology and Instruments(Tianjin University) Tianjin 300350China School of Integrated Sciences and Engineering(Exemplary School of Microelectronics) University of Electronic Science and Technology of ChinaChengdu 610054China State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of ChinaChengdu 610054China

Nanoelectromechanical systems(NEMS)based on atomically-thin tungsten diselenide(WSe_(2)),benefiting from the excellent material properties and the mechanical degree of freedom,offer an ideal platform for studying and exploiting dynamic strain engineering and cross-scale vibration coupling in two-dimensional(2D)***,such opportunity has remained largely unexplored for WSe_(2)NEMS,impeding exploration of exquisite physical processes and realization of novel device ***,we demonstrate dynamic coupling between atomic lattice vibration and nanomechanical resonances in few-layer WSe_(2)*** a custom-built setup capable of simultaneously detecting Raman and motional signals,we accomplish cross-scale mode coupling between the THz crystal phonon and MHz structural vibration,achieving GHz frequency tuning in the atomic lattice modes with a dynamic gauge factor of 61.9,the best among all 2D crystals reported to *** findings show that such 2D NEMS offer great promises for exploring cross-scale physics in atomically-thin semiconductors.

关键词： dynamic strain engineering dynamic tuning nanomechanical resonance cross scale mode coupling nanoelectromechanical systems terahertz atomic lattice vibration exploration exquisite physical processes nanoelectromechanical systems nems based

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Methods to improve the PCM yield of 12µm vanadium oxide uncooled infrared detector mass production process on 200mm Wafers 10

Methods to improve the PCM yield of 12µm vanadium oxide unc...

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10th Symposium on Novel Optoelectronic Detection technology and Applications

作者： Ning, Ning Zhou, HongXi Zhang, QiYu Gong, XiHuai Cai, ShengDong Si, Jing Peng, Pan Peng, LuLu Pan, BoJin Jiang, YaDong School of Optoelectronic Science and Engineering University of Electronic Science and Technology of China Chengdu610054 China State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu610054 China United Microelectronics Center Co. Ltd. Chongqing401332 China

ISBN: (数字)9781510688155

ISBN: (纸本)9781510688148

To address the technological challenges associated with mass production of 12 µm vanadium oxide (VOx) uncooled infrared detectors on the 200 mm fabrication platform, research efforts were focused on enhancing the electrical Process Control Monitoring (PCM) yield of the platform. The Titanium-enhanced Anchor process and low-stress silicon nitride films were applied to resolve issues such as poor connectivity of pixel contact chains, stress mismatch between low-temperature silicon nitride films and detector structures, and insufficient sidewall coverage. This approach resulted in a significant reduction in the failure rate of the detector's pixel via chain structure, effectively addressing issues such as pixel structure collapse due to stress mismatch and premature PI release caused by inadequate sidewall coverage. The PCM yield associated with the detector process improved to over 95%, thereby meeting the mass production requirements for the detector product. © 2025 SPIE.

关键词： Silicon nitride

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Enhancing the Avalanche Ionization Integral to 0.24 in GaN Schottky Barrier Diodes Utilizing a Self-Aligned Anode Structure

Enhancing the Avalanche Ionization Integral to 0.24 in GaN S...

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IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)

作者： Jianhua Zhou Lin’An Yang Xuan Huang Xinyi Wang Xiaohua Ma Yue Hao State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology School of Microelectronics Xidian University Xi’an China

ISBN: (数字)9798331520717

ISBN: (纸本)9798331520724

we have experimentally investigated gallium nitride (GaN) Schottky barrier diodes including a self-aligned anode structure, exhibiting superior avalanche breakdown capability. The results reveal that the self-aligned anode structure significantly elevates the breakdown voltage from 38.5 V of the conventional structure to 69 V. Meanwhile, the peak electric field at the anode/GaN interface is improved to $2.60 \mathrm{MV} / \mathrm{cm}$, approaching the ideal value of $3.37 \mathrm{MV} / \mathrm{cm}$, with a corresponding avalanche ionization integral of 0.24, which has greater potential to realize impact ionization avalanche transit-time (IMPATT) diodes oscillation.

关键词： Radio frequency Schottky diodes Electric potential Schottky barriers Microwave oscillators Anodes Gallium nitride Electric fields Optimization Passivation

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A Ku-Band Broadband High-Efficiency GaAs MMIC Power Amplifier

A Ku-Band Broadband High-Efficiency GaAs MMIC Power Amplifie...

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International Conference on Microwave and Millimeter Wave technology Proceedings

作者： Guanghai Yao Huanhuan Jia Ziyue Zhao Yang Lu Chupeng Yi Xin Liu Ting Feng Lin-an Yang Xiaohua Ma State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology School of Microelectronics Xidian University Xi'an China

ISBN: (数字)9798350389968

ISBN: (纸本)9798350389975

This work uses $0.25-\mu \mathrm{m}$ GaAs pHEMT technology to design a 11.7-17.6 GHz broadband high-efficiency monolithic microwave integrated circuit (MMIC) amplifier. An equivalent impedance model matching technology is used to improve the bandwidth of the power amplifiers (PAs). Compared with the traditional single impedance point matching method, our design can obtain a more accurate impedance transformation trajectory, thereby ensuring broadband matching. The simulation results show that when the drain voltage is 5 V, the power-added efficiency (PAE) of the amplifier in the 11.7-17.6 GHz is greater than 34.6%, the peak P AE reaches 38.8%, and the output power (Pout) is greater than 31 dBm (1.3 W), while providing a gain greater than 20 dB. The designed P A stands out with its wide bandwidth and high P AE.

关键词： Broadband amplifiers Gallium arsenide PHEMTs Power amplifiers Microwave circuits Microwave amplifiers Impedance

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A 3.3-3.7 GHz High-Linearity and Large-Backoff Doherty Amplifier

A 3.3-3.7 GHz High-Linearity and Large-Backoff Doherty Ampli...

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International Conference on Microwave and Millimeter Wave technology Proceedings

作者： Zexiang Li Chupeng Yi Yang Lu Ziyue Zhao Xin Liu Ting Feng Xiaohua Ma State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology School of Microelectronics Xidian University Xi'an China

ISBN: (数字)9798350389968

ISBN: (纸本)9798350389975

An asymmetric Doherty power amplifier with saturated output power greater than 35 dBm, amplitude-to-phase distortion (AM-PM) less than 5 and power back-off of 9 dB is designed based on the 0.25-μm GaN process. To enhance the gain, a cascaded driver stage is employed before the Doherty power amplifier. Introducing mismatches between the driver stages and AM-PM compensation between the driver stage and the Doherty power amplifier stabilizes linearity. Simulation results show that at 3.3-3.7 GHz, the overall saturated output power exceeds 35 dBm, power gain exceeds 28 dB, and power-added efficiency (PAE) exceeds 38%. Meanwhile, at 9 dB back-off from saturated output power, PAE reaches 29%-32%, AM-PM distortion is less than 5, and the layout size is 3.3 mm*2 mm.

关键词： Microwave technology Microwave integrated circuits Simulation Layout Millimeter wave technology Power amplifiers Linearity

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Designing double isolated bands and subgap states in two-dimensional XPS3 (X = Al,Ga,In,Tl) for achieving bi-anti-ambipolar transport

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Physical Review Applied 2024年第6期21卷 064009-064009页

作者： Jialin Yang Chuyao Chen Xuemin Hu Tingting Guo Hengze Qu Zhenhua Wu Li Tao Shengli Zhang MIIT Key Laboratory of Advanced Display Materials and Devices College of Material Science and Engineering School of Material Engineering Key Laboratory of Microelectronics Device and Integrated Technology School of Materials Science and Engineering Jiangsu Key Laboratory of Advanced Metallic Materials Center for 2D Materials and Center for Flexible RF Technology

Anti-ambipolar transistors (AATs) are a promising candidate for multivalued logic devices, which are vital for improving the device density and data-handling capabilities of nanoelectronics. Compared with most AATs with Λ-shaped transport characteristics, the emerging four-logic-state bi-AATs have a stronger capability for exponentially increasing the integration density. Here, we demonstrate an alternative strategy to achieve bi-anti-ambipolar transport by using the intrinsic electronic properties of two-dimensional (2D) materials. In detail, by breaking symmetry in edge-sharing octahedra, 2D XPS3 (X = Al,Ga,In,Tl) materials exhibit isolated band structures with subgap states near the Fermi level. More importantly, this special electronic feature inspires the design of double subgap tunnel field-effect transistors (TFETs) for realizing bi-anti-ambipolar transport. Through quantum transport simulations, we observe M-shaped I-V curves in the 2D InPS3 TFET, verifying the feasibility of the device concept. This work broadens the horizon for the development of bi-anti-ambipolar devices in the forthcoming era of big data.

关键词： Electronic structure Quantum transport 2-dimensional systems Field-effect transistors Semiconductor compounds Density functional calculations Nonequilibrium Green's function

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Polarization-encoded neural networks with simplified grating patch

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Science China(Technological Sciences) 2025年第2期68卷 269-277页

作者： Chengyan ZHONG Xiang WANG Lingfei LI Yuanchi CUI Lei XIAO Dawei SONG Junxiong GUO Wen HUANG Yufeng GUO Yu LIU College of Integrated Circuit Science and Engineering Nanjing University of Posts and TelecommunicationsNanjing 210023China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing 210023China College of Integrated Circuits Hangzhou Global Scientific and Technological Innovation Centre Zhejiang UniversityHangzhou 310027China Nanjing Mumusili Technology Co. LTDNanjing 211100China School of Integrated Circuits Tsinghua UniversityBeijing 100084China Institute of Advanced Study School of Electronic Information and Electrical EngineeringChengdu UniversityChengdu 610106China State Key Laboratory of Electronic Thin Films and Integrated Devices School of Integrated Circuit Science and EngineeringUniversity of Electronic Science and Technology of ChinaChengdu 610054China

Optical neural networks(ONNs)offer a promising solution for high-performance,energy-efficient artificial intelligence hardware by leveraging the parallelism and speed of ***,the large-scale implementation of ONNs remains challenging due to the bulky footprint and complex control of optical *** this work,we propose and simulate a plasmonic polarized synaptic architecture that overcomes the diffraction limit and enables ultra-compact *** tuning the polarization state of incident light,the optical transmittance through each plasmonic unit can be dynamically adjusted to represent a synaptic *** plasmonic structures,with features as small as 40 nm,operate well below this limit in the visible spectrum(400-750 nm).Compared with diffraction and interference-based circuit designs,our proposed method achieves a substantial reduction in synaptic density by factors of 150000-fold and 1500-fold,***,we successfully demonstrate a proof-of-concept plasmonic ONN applied to the Canadian Institute for Advanced Research—10 classes(CIFAR-10)dataset using a Visual Geometry Group network with 16 layers(VGG16)*** training for 80 epochs,the network achieves an accuracy of 93%.The polarization-tunable plasmonics paves the way towards scalable ONNs for next-generation artificial intelligence(AI)accelerators and smart sensors.

关键词： optical neural networks polarization dependent nanophotonic ultra-compact devices diffraction limit

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