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检索条件"机构=Key Laboratory of Microelectronics Devices and Integration Technology"
1308 条 记 录,以下是171-180 订阅
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Floquet control of topological phases and Hall effects in Z2 nodal line semimetals
arXiv
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arXiv 2025年
作者: Liu, Pu Cui, Chaoxi Li, Lei Li, Runze Xu, Dong-Hui Yu, Zhi-Ming School of Microelectronics and Physics Hunan University of Technology and Business Changsha410205 China School of Physics Beijing Institute of Technology Beijing100081 China Research Center for Quantum Physics and Technologies Inner Mongolia University Hohhot010021 China School of Physical Science and Technology Inner Mongolia University Hohhot010021 China Department of Physics Chongqing Key Laboratory for Strongly Coupled Physics Chongqing University Chongqing400044 China Center of Quantum Materials and Devices Chongqing University Chongqing400044 China International Center for Quantum Materials Beijing Institute of Technology Zhuhai519000 China
Dynamic control of topological properties in materials is central to modern condensed matter physics, and Floquet engineering, utilizing periodic light fields, provides a promising avenue. Here, we use Floquet theory ... 详细信息
来源: 评论
Recent developments in nonferrous metals and related materials for biomedical applications in China:a review
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Rare Metals 2022年 第5期41卷 1410-1433页
作者: Hai-Ling Tu Hong-Bin Zhao Yan-Yan Fan Qing-Zhu Zhang State Key Laboratory of Advanced Materials for Smart Sensing GRINM Group Co.Ltd.Beijing 100088China China Academy of Space Technology Beijing 100094China Key Laboratory of Microelectronics Devices&Integrated Technology Institute of MicroelectronicsCASBeijing 100029China
Biomedical materials have received increasing attention in recent decades and have been used in medical applications to advance patient care,such as prosthetic implants,tissue repair and regeneration,drug delivery sys... 详细信息
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Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS technology Node and Beyond  1st ed. 2019
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丛书名: Springer Theses
2019年
作者: Guilei Wang
This thesis presents the SiGe source and drain (S/D) technology in the context of advanced CMOS, and addresses both device processing and epitaxy modelling.
来源: 评论
A two-dimensional analytical model of fully depleted asymmetrical dual material gate double-gate strained-Si MOSFETs
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Journal of Semiconductors 2011年 第4期32卷 70-76页
作者: 李劲 刘红侠 袁博 曹磊 李斌 Key Laboratory of Ministry of Education for Wide Bandgap Semiconductor Devices School of MicroelectronicsXidian University School of Information and Electrical Engineering Hunan University of Science and Technology
On the basis of the exact resultant solution of two dimensional Poisson’s equations,a new accurate two-dimensional analytical model comprising surface channel potentials,a surface channel electric field and a thresho... 详细信息
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Quantum transport for the gate-length scaling limit of Si nanowire field-effect transistors based on calibrated k⋅p Hamiltonian parameters
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Physical Review Applied 2025年 第3期23卷 034049-034049页
作者: Guohui Zhan Tongshuai Zhu Jiaxin Yao Kun Luo Huaixiang Yin Shengli Zhang Zhenhua Wu Center for Quantum Matter School of Physics Zhejiang University Hangzhou 310058 Zhejiang China University of Chinese Academy of Sciences 100049 Beijing China Institute of Microelectronics Chinese Academy of Sciences 100029 Beijing China College of Science China University of Petroleum (East China) Qingdao 266580 Shandong China School of Materials Science and Engineering China University of Petroleum (East China) Qingdao 266580 Shandong China Key Laboratory of Advanced Display Materials and Devices College of Material Science and Engineering Nanjing University of Science and Technology Nanjing 210094 Jiangsu China
We present a comprehensive investigation of quantum transport in silicon nanowire field-effect transistors (SiNWFETs) at the scaling limit. The Si bulk k⋅p Hamiltonian parameters are rendered invalid at smaller scales... 详细信息
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A photomemory by selective-assembling hybrid porphyrin-silicon nanowire field-effect transistor
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Science China(Information Sciences) 2020年 第6期63卷 253-255页
作者: Gong CHEN Bocheng YU Xiaokang LI Xiaoqiao DONG Xiaoyan XU Zhihong LI Ru HUANG Ming LI Key Laboratory of Microelectronic Devices and Circuits(MOE) Institute of MicroelectronicsPeking University National Key Laboratory of Science and Technology on Micro/Nano Fabrication Peking University Faculty of Information Technology Beijing University of Technology
Dear editor,Recently, the integration of photosensitive material and electronic nanodevice has been the center of attention with Internet of things (IoT)technology development [1–3]. The immobilization of such photoa... 详细信息
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Schottky forward current transport mechanisms in AlGaN/GaN HEMTs over a wide temperature range
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Chinese Physics B 2014年 第9期23卷 409-413页
作者: 武玫 郑大勇 王媛 陈伟伟 张凯 马晓华 张进成 郝跃 School of Microelectronics Xidian University Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices School of MicroelectronicsXidian University The Fifth Electronics Research Institute of Ministry of Industry and Information Technology
The behavior of Schottky contacts in AlGaN/GaN high electron mobility transistors (HEMTs) is investigated by temperature-dependent current-voltage (T-I-V) measurements from 300 K to 473 K. The ideality factor and ... 详细信息
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Influence of an ALD TiN capping layer on the PBTI characteristics of n-FinFET with ALD HfO2/TiN-capping/TiAl gate stacks
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Science China(Information Sciences) 2020年 第2期63卷 248-250页
作者: Hong YANG Luwei QI Yanbo ZHANG Bo TANG Qianqian LIU Hao XU Xueli MA Xiaolei WANG Yongliang LI Huaxiang YIN Junfeng LI Huilong ZHU Chao ZHAO Wenwu WANG Tianchun YE Key Laboratory of Microelectronics Devices & Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences National Space Science Center Chinese Academy of Sciences School of Microelectronics University of Chinese Academy of Sciences
Dear editor,High k/metal gate (HKMG) stacks with fully gatelast processing have become the primary solution for sub-22-nm volume manufacturing with the development of complementary oxide semiconductor(CMOS) technology... 详细信息
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Fabrication and Characterization of 1700 V 4H-SiC Vertical Double-Implanted Metal-Oxide-Semiconductor Field-Effect Transistors
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Chinese Physics Letters 2015年 第12期32卷 109-112页
作者: 申华军 唐亚超 彭朝阳 邓小川 白云 王弋宇 李诚瞻 刘可安 刘新宇 Key Laboratory of Microelectronics Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 Microwave Device and IC Department Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu 610054 Zhuzhou CSR Times Electric Co. LTD Zhuzhou 412001
The fabrication and characterization of 1700 V 7 A 4H-SiC vertical double-implanted metal-oxide-semiconductor field-effect transistors (VDMOSFETs) are reported. The drift layer is 17μm in thickness with 5 × 10... 详细信息
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Recent advances in phenothiazine-based dyes for dye-sensitized solar cells
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Chinese Chemical Letters 2016年 第8期27卷 1304-1318页
作者: Jun-Sheng Luo Zhong-Quan Wan Chun-Yang Jia State Key Laboratory of Electronic Thin Films and Integrated Devices School of Microelectronics and Solid-State ElectronicsUniversity of Electronic Science and Technology of China
Dye-sensitized solar cells(DSSCs) have attracted significant attention as alternatives to conventional silicon-based solar cells owing to their low-cost production,facile fabrication,excellent stability and high pow... 详细信息
来源: 评论