Dynamic control of topological properties in materials is central to modern condensed matter physics, and Floquet engineering, utilizing periodic light fields, provides a promising avenue. Here, we use Floquet theory ...
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Biomedical materials have received increasing attention in recent decades and have been used in medical applications to advance patient care,such as prosthetic implants,tissue repair and regeneration,drug delivery sys...
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Biomedical materials have received increasing attention in recent decades and have been used in medical applications to advance patient care,such as prosthetic implants,tissue repair and regeneration,drug delivery systems,pharmaceutical or biological therapy products,and sensitive diagnostic *** different types of biomedical materials,nonferrous metals and related materials(NMRMs)are important and attractive *** updating of biomedical NMRMs and devices heavily relies on original research and applicationoriented ***,we provide recent research findings and succinct insights into the developments in NMRMs for biomedical applications in China,including the use of titanium,magnesium,copper,zinc,cobalt,zirconium,hafnium,niobium,rhenium,tantalum,tungsten,silver,gold,platinum,palladium,their alloys and compounds,rare earths,high-entropy alloys,and liquid ***,the literature review concludes with several possible directions of NMRMs for new and future developments in biomedical engineering.
This thesis presents the SiGe source and drain (S/D) technology in the context of advanced CMOS, and addresses both device processing and epitaxy modelling.
ISBN:
(数字)9789811500466
ISBN:
(纸本)9789811500459
This thesis presents the SiGe source and drain (S/D) technology in the context of advanced CMOS, and addresses both device processing and epitaxy modelling.
On the basis of the exact resultant solution of two dimensional Poisson’s equations,a new accurate two-dimensional analytical model comprising surface channel potentials,a surface channel electric field and a thresho...
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On the basis of the exact resultant solution of two dimensional Poisson’s equations,a new accurate two-dimensional analytical model comprising surface channel potentials,a surface channel electric field and a threshold voltage for fully depleted asymmetrical dual material gate double-gate strained-Si MOSFETs is successfully developed. The model shows its validity by good agreement with the simulated results from a two-dimensional numerical *** offering a physical insight into device physics,the model provides basic design guidance for fully depleted asymmetrical dual material gate double-gate strained-Si MOSFETs.
We present a comprehensive investigation of quantum transport in silicon nanowire field-effect transistors (SiNWFETs) at the scaling limit. The Si bulk k⋅p Hamiltonian parameters are rendered invalid at smaller scales...
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We present a comprehensive investigation of quantum transport in silicon nanowire field-effect transistors (SiNWFETs) at the scaling limit. The Si bulk k⋅p Hamiltonian parameters are rendered invalid at smaller scales due to pronounced quantum confinement effects. Consequently, nanowire k⋅p Hamiltonian parameters are meticulously calibrated with the use of first-principles HSE06 band structures through the fast least-squares method. On the basis of the nonequilibrium Green’s function formalism, we then systematically analyze the performance limits of gate-all-around SiNWFETs under various gate lengths. With diminishing gate lengths, quantum tunneling from source to drain intensifies, leading to a degradation in subthreshold swing. Our findings reveal that the gate-length scaling limit for n-type devices is numerically larger than for p-type devices, and distinct gate scaling limits are elucidated for various cross-section sizes; for instance, the ultimate scaling limit of Si nanowires of 4×4nm2 cross section is approximately 10 nm.
Dear editor,Recently, the integration of photosensitive material and electronic nanodevice has been the center of attention with Internet of things (IoT)technology development [1–3]. The immobilization of such photoa...
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Dear editor,Recently, the integration of photosensitive material and electronic nanodevice has been the center of attention with Internet of things (IoT)technology development [1–3]. The immobilization of such photoactive molecules on the semiconductor surface was necessarily adopted to employ their photoelectric characteristics which can be observed in the solution. Porphyrin-based hybrid transistors have emerged as promising candidates for photonic sensing application due to the
The behavior of Schottky contacts in AlGaN/GaN high electron mobility transistors (HEMTs) is investigated by temperature-dependent current-voltage (T-I-V) measurements from 300 K to 473 K. The ideality factor and ...
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The behavior of Schottky contacts in AlGaN/GaN high electron mobility transistors (HEMTs) is investigated by temperature-dependent current-voltage (T-I-V) measurements from 300 K to 473 K. The ideality factor and barrier height determined based on the thermionic emission (TE) theory are found to be strong functions of temperature, while present a great deviation from the theoretical value, which can be expounded by the barrier height inhomogeneities. In order to determine the forward current transport mechanisms, the experimental data are analyzed using numerical fitting method, considering the temperature-dependent series resistance. It is observed that the current flow at room temperature can be attributed to the tunneling mechanism, while thermionic emission current gains a growing proportion with an increase in temperature. Finally, the effective barrier height is derived based on the extracted thermionic emission component, and an evaluation of the density of dislocations is made from the I-V characteristics, giving a value of 1.49 × 10^7 cm^-2.
Dear editor,High k/metal gate (HKMG) stacks with fully gatelast processing have become the primary solution for sub-22-nm volume manufacturing with the development of complementary oxide semiconductor(CMOS) technology...
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Dear editor,High k/metal gate (HKMG) stacks with fully gatelast processing have become the primary solution for sub-22-nm volume manufacturing with the development of complementary oxide semiconductor(CMOS) technology [1]. In the HKMG stack, titanium nitride (TiN) is observed to play an important role as a work-function metal and an HK
The fabrication and characterization of 1700 V 7 A 4H-SiC vertical double-implanted metal-oxide-semiconductor field-effect transistors (VDMOSFETs) are reported. The drift layer is 17μm in thickness with 5 × 10...
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The fabrication and characterization of 1700 V 7 A 4H-SiC vertical double-implanted metal-oxide-semiconductor field-effect transistors (VDMOSFETs) are reported. The drift layer is 17μm in thickness with 5 × 10^15 cm^-3 n-type doping, and the channel length is 1μm. The MOSFETs show a peak mobility of 17cm2/V.s and a typical threshold voltage of 3 V. The active area of 0.028cm2 delivers a forward drain current of 7A at Vcs = 22 V and VDS= 15 V. The specific on-resistance (Ron,sv) is 18mΩ.cm2 at VGS= 22 V and the blocking voltage is 1975 V (IDS 〈 lOOnA) at VGS = 0 V.
Dye-sensitized solar cells(DSSCs) have attracted significant attention as alternatives to conventional silicon-based solar cells owing to their low-cost production,facile fabrication,excellent stability and high pow...
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Dye-sensitized solar cells(DSSCs) have attracted significant attention as alternatives to conventional silicon-based solar cells owing to their low-cost production,facile fabrication,excellent stability and high power conversion efficiency(PCE).The dye molecule is one of the key components in DSSCs since it significant influence on the PCE,charge separation,light-harvesting,as well as the device *** various dyes,easily tunable phenothiazine-based dyes hold a large proportion and achieve impressive photovoltaic *** class of dyes not only has superiorly non-planar butterfly structure but also possesses excellent electron donating ability and large π conjugated *** review summarized recent developments in the phenothiazine dyes,including small molecule phenothiazine dyes,polymer phenothiazine dyes and phenothiazine dyes for co-sensitization,especially focused on the developments and design concepts of small molecule phenothiazine dyes,as well as the correlation between molecular structures and the photovoltaic performances.
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