The impacts of total ionizing dose by cobalt60 on the 4 Mb Serial Peripheral Interface NOR Flash memory are studied in detail. Eletrical parameters degradation and unidirectioanl upsets are demonstrated with physical ...
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ISBN:
(纸本)9781467397209
The impacts of total ionizing dose by cobalt60 on the 4 Mb Serial Peripheral Interface NOR Flash memory are studied in detail. Eletrical parameters degradation and unidirectioanl upsets are demonstrated with physical explanations.
The emergence of flexoelectric effect, which refers to the linear electromechanical coupling between strain gradient and charge polarization in a wide range of materials, suggests a new catalytic mechanism to activate...
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The effects of a carbon implant on thermal stability of Ni0.95(Pt0.05)Si films are investigated by im- planting carbon of different doses into Si substrates before silicidation with two steps of rapid thermal anneal...
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The effects of a carbon implant on thermal stability of Ni0.95(Pt0.05)Si films are investigated by im- planting carbon of different doses into Si substrates before silicidation with two steps of rapid thermal annealing. Compared with the Nio.95(Pt0.05)Si films without carbon implanting, the thermal stability of Ni0.95(Pt0.05)Si films with two carbon implant doses are improved 100 ℃ (1 × 1015 cm-2) and 150 ℃(3 × 1015 cm-2), respectively. Through sheet resistance measurement, X-ray diffraction and scanning electron microscopy, we conclude that car- bon atoms precipitated at Ni(Pto.05)Si grain boundaries and Nio.95(Pt0.05)Si/Si interface account for the improved thermal stability of Ni0.95(Pt0.05)Si films. Furthermore, the presence of C in Nio.95(Pt0.05)Si films changes the preferred orientation of polycrystalline NiSi which will benefit the practical application of this material.
Extremely thin silicon on insulator p-channel metal oxide-semiconductor field-effect transistors (PMOSFETs) with implanted doping and in situ doping are analyzed by TCAD simulation. The critical characteris- tic par...
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Extremely thin silicon on insulator p-channel metal oxide-semiconductor field-effect transistors (PMOSFETs) with implanted doping and in situ doping are analyzed by TCAD simulation. The critical characteris- tic parameters acquired by TCAD simulation are compared with each other to analyze their electrical perfbrmance. The saturated driven currents of implanted doping devices with a 25 nm gate length (Lg) are about 200 ×μA/μm bigger than the in situ doping devices at the same saturated threshold voltage (Vtsat). Meanwhile the drain-induced barrier lowering (DIBL) and saturated subthreshold swings for implanted doping devices are also 30 50 mV/V and 6.3-9.1 mV/dec smaller than those of in situ doping devices at 25 nm Lg and a 9-11 nm thickness of SOl (Tsi), respectively. The shift of Vtsat with Tsi for in situ doping devices with 15 nm Lg is -31.8 mV/nm, whereas that for in situ doping devices is only -6.8 mV/nm. These outcomes indicate that the devices with implanted doping can produce a more advanced and stable electrical performance.
A strong influence of nitrogen gas on the content of surface hydroxyl groups of TiO2 films by atomic layer deposition(ALD) was investigated by X-ray photoelectron spectroscopy(XPS), contact angle measuring system,...
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A strong influence of nitrogen gas on the content of surface hydroxyl groups of TiO2 films by atomic layer deposition(ALD) was investigated by X-ray photoelectron spectroscopy(XPS), contact angle measuring system, and UV–Vis spectrophotometer. XPS spectra of O 1s indicate that the content of surface hydroxyl groups is varied when using N2 as carrier gas. The results of water contact angles and optical reflection spectra show that the content variation of surface hydroxyl groups influences the wetting properties and optical reflectivity of TiO2 films. A surface reaction model is suggested to explain the ALD reaction process using N2 as carrier gas.
Pentacene organic field effect transistors with a series of submicrometer channel have been fabricated and characterized. Source and drain metal electrodes was made by electron-beam lithography and lift-off process. I...
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As the front-end preamplifiers in optical receivers, transimpedance amplifiers (TIAs) are commonly required to have a high gain and low input noise to amplify the weak and susceptible input signal. At the same time,...
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As the front-end preamplifiers in optical receivers, transimpedance amplifiers (TIAs) are commonly required to have a high gain and low input noise to amplify the weak and susceptible input signal. At the same time, the TIAs should possess a wide dynamic range (DR) to prevent the circuit from becoming saturated by high input currents. Based on the above, this paper presents a CMOS transimpedance amplifier with high gain and a wide DR for 2.5 Gbit/s communications. The TIA proposed consists of a three-stage cascade pull push inverter, an automatic gain control circuit, and a shunt transistor controlled by the resistive divider. The inductive-series peaking technique is used to further extend the bandwidth. The TIA proposed displays a maximum transimpedance gain of 88.3 dBΩ with the -3 dB bandwidth of 1.8 GHz, exhibits an input current dynamic range from 100 nA to 10 mA. The output voltage noise is less than 48.23 nV/√Hz within the -3 dB bandwidth. The circuit is fabricated using an SMIC 0.18 μm 1P6M RFCMOS process and dissipates a dc power of 9.4 mW with 1.8 V supply voltage.
The effect of the annealing time and annealing temperature on Ni/Ge/Au electrode contacts deposited on the n-type InP contact layer has been studied using a circular transmission line model. The minimum specific conta...
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The effect of the annealing time and annealing temperature on Ni/Ge/Au electrode contacts deposited on the n-type InP contact layer has been studied using a circular transmission line model. The minimum specific contact resistance of 3.210 7 cm2was achieved on the low-doped n-type InP contact layer with a 40 s anneal at 425 ℃. In order to improve the ohmic contact and reduce the difficulty in the fabrication of the high doped InP epi-layer, the doping concentration in the InP contact layer was chosen to be 51018cm 3in the fabrication of transferred electronic devices. Excellent differential negative resistance properties were obtained by an electron beam evaporating the Ni/Ge/Au/Ge/Ni/Au composite electrode on an InP epi-layer with a 60 s anneal at 380 ℃.
High and random voltages are big challenges for practical applications of organic thin film transistors (OTFTs). Herein, a route to achieve devices with both low operating voltages (Vop) and tunable threshold voltages...
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Selector with high nonlinearity and low leakage current is critical to solve the sneaking current issue in crossbar memory array. In this work' we present a high performance Cu BEOL compatible threshold switching ...
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