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2016 13th IEEE International Conference on Solid-State and Integrated Circuit technology (ICSICT)

作者： Jinshun Bi Jin Li Lanlong Ji Hongyang Hu Ming Liu Key Laboratory of Microelectronics Devices ＆ Integrated Technology Institute of Microelectronics Chinese Academy of Sciences

The impacts of total ionizing dose by cobalt60 on the 4 Mb Serial Peripheral Interface NOR Flash memory are studied in detail. Eletrical parameters degradation and unidirectioanl upsets are demonstrated with physical ... 详细信息

ISBN: (纸本)9781467397209

关键词： Estimation Field programmable gate arrays OFDM Modulation Filtration Clocks Signal processing algorithms

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Boosting hydrogen evolution via flexoelectric catalysis in gradient F-doped hydroxyapatite nanowires

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Chemical Science 2025年 2025 May 2页

作者： Zhang, Yucheng Huang, Jiawei Jiang, Lei Qiang, Jun Zhang, Zhouyang Liu, Zhanfeng Liu, Yi Tian, Tingfang Wang, Zhao Fei, Linfeng School of Physics and Materials Science Jiangxi Provincial Key Laboratory of Photodetectors Nanchang University Jiangxi Nanchang330031 China Hubei Key Laboratory of Micro- & Nanoelectronic Materials and Devices School of Microelectronics Hubei University Hubei Wuhan430062 China School of Mechanical Engineering Ningxia University Ningxia 750021 Yinchuan China School of Materials and New Energy Ningxia University Ningxia Yinchuan750021 China National Synchrotron Radiation Laboratory University of Science and Technology of China Anhui Hefei230029 China

The emergence of flexoelectric effect, which refers to the linear electromechanical coupling between strain gradient and charge polarization in a wide range of materials, suggests a new catalytic mechanism to activate chemical bonds and reactions. Although pioneering studies have shown the remarkable potential for flexoelectric catalysis in a few scenarios, the lack of green, cheap, bio-compatible, and high-efficiency flexoelectric catalysts acts as a major barrier to its expanding applications. In this study, we report the effective design of a high-performance flexoelectric catalyst by simultaneous structural and compositional engineering on hydroxyapatite, a ubiquitous mineral and a well-known biomaterial. By synergizing atomic-scale and nanoscale strain gradients (which are respectively induced by surface lattice doping and geometry engineering) in F-doped hydroxyapatite nanowires (F-HAP NWs), the flexoelectric response together with the catalytic performance of the material are drastically improved, leading to a high hydrogen generation rate (322.7 μmol g−1 h−1) in pure water. The findings highlight the potential of F-HAP NWs in flexoelectric catalysis and offer new insights into mechanocatalytic and electrochemical processes in biological systems. © 2025 The Royal Society of Chemistry.

关键词： Hydrogen bonds

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Effects of a carbon implant on thermal stability of Ni_(0.95)(Pt_(0.05))Si

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Journal of Semiconductors 2015年第6期36卷 25-28页

作者：冯帅赵利川张青竹杨鹏鹏唐兆云闫江吴次南 Key Laboratory of Microelectronics Devices & Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences College of Big Data and Information Engineering Guizhou University

The effects of a carbon implant on thermal stability of Ni0.95（Pt0.05）Si films are investigated by im- planting carbon of different doses into Si substrates before silicidation with two steps of rapid thermal annealing. Compared with the Nio.95（Pt0.05）Si films without carbon implanting, the thermal stability of Ni0.95（Pt0.05）Si films with two carbon implant doses are improved 100 ℃ （1 × 1015 cm-2） and 150 ℃（3 × 1015 cm-2）, respectively. Through sheet resistance measurement, X-ray diffraction and scanning electron microscopy, we conclude that car- bon atoms precipitated at Ni（Pto.05）Si grain boundaries and Nio.95（Pt0.05）Si/Si interface account for the improved thermal stability of Ni0.95（Pt0.05）Si films. Furthermore, the presence of C in Nio.95（Pt0.05）Si films changes the preferred orientation of polycrystalline NiSi which will benefit the practical application of this material.

关键词： silicide thermal stability carbon implant RTA

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A simulation analysis of performance of both implanted doping and in situ doping ETSOI PMOSFETs

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Journal of Semiconductors 2015年第4期36卷 180-184页

作者：冯帅赵利川张青竹杨鹏鹏唐兆云吴次南闫江 College of Big Data and Information Engineering Guizhou University Key Laboratory of Microelectronics Devices & Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences

Extremely thin silicon on insulator p-channel metal oxide-semiconductor field-effect transistors （PMOSFETs） with implanted doping and in situ doping are analyzed by TCAD simulation. The critical characteris- tic parameters acquired by TCAD simulation are compared with each other to analyze their electrical perfbrmance. The saturated driven currents of implanted doping devices with a 25 nm gate length （Lg） are about 200 ×μA/μm bigger than the in situ doping devices at the same saturated threshold voltage （Vtsat）. Meanwhile the drain-induced barrier lowering （DIBL） and saturated subthreshold swings for implanted doping devices are also 30 50 mV/V and 6.3-9.1 mV/dec smaller than those of in situ doping devices at 25 nm Lg and a 9-11 nm thickness of SOl （Tsi）, respectively. The shift of Vtsat with Tsi for in situ doping devices with 15 nm Lg is -31.8 mV/nm, whereas that for in situ doping devices is only -6.8 mV/nm. These outcomes indicate that the devices with implanted doping can produce a more advanced and stable electrical performance.

关键词： implanted doping in situ doping TCAD simulation PMOSFETs

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Dehydroxylation action on surface of TiO_2 films restrained by nitrogen carrier gas during atomic layer deposition process

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Rare Metals 2014年第5期33卷 583-586页

作者： Zhi-Peng Rao Bang-Wu Liu Chao-Bo Li Yang Xia Jun Wan Key Laboratory of Microelectronic Devices and Integration Technology Institute of Microelectronics Chinese Academy of Sciences Jiaxing Research and Commercialization Center for Microelectronics Equipment Zhejiang Institute of Advanced Technology Chinese Academy of Sciences Jiaxing Kemin Electronic Equipment & Technologies Co. LtdZhejiang Institute of Advanced Technology Chinese Academy of Sciences

A strong influence of nitrogen gas on the content of surface hydroxyl groups of TiO2 films by atomic layer deposition（ALD） was investigated by X-ray photoelectron spectroscopy（XPS）, contact angle measuring system, and UV–Vis spectrophotometer. XPS spectra of O 1s indicate that the content of surface hydroxyl groups is varied when using N2 as carrier gas. The results of water contact angles and optical reflection spectra show that the content variation of surface hydroxyl groups influences the wetting properties and optical reflectivity of TiO2 films. A surface reaction model is suggested to explain the ALD reaction process using N2 as carrier gas.

关键词： Atomic layer deposition TiO2 N2 Surface hydroxyl groups XPS Reaction model

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Sub-micrometer organic field effect transistors

Sub-micrometer organic field effect transistors

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ISTC/CSTIC 2009 (CISTC)

作者： Shang, L. Liu, M. Ji, Z. Liu, G. Liu, X. Liu, J. Wang, H. Key Laboratory of Nanofabrication and Novel Devices Integration Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China

ISBN: (纸本)9781615676460

Pentacene organic field effect transistors with a series of submicrometer channel have been fabricated and characterized. Source and drain metal electrodes was made by electron-beam lithography and lift-off process. Image reversal photo resist was used to make integrated mask to pattern the organic semiconductor film to reduce the off-state current. And thiol treatment was applied on gold electrodes to modify their surface energy and improve the charge carrier injection. All the devices can behavior as typical p-type transistor, and have obvious saturation. Using electrode and dielectric surface treatment, device performances have significant improvement. All of the performances, including mobility, threshold voltage and on/off current ratio will change with the channel length decreasing because of the low quality interface between the OSC and dielectrics. ©The Electrochemical Society.

关键词： Organic field effect transistors

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A high gain wide dynamic range transimpedance amplifier for optical receivers

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Journal of Semiconductors 2014年第1期35卷 78-83页

作者：刘帘曦邹姣恩云飞刘术彬牛越朱樟明杨银堂 School of Microelectronics Xidian University Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices National Key Laboratory of Science and Technology on Reliability Physics and Application Technology of Electrical Component

As the front-end preamplifiers in optical receivers, transimpedance amplifiers （TIAs） are commonly required to have a high gain and low input noise to amplify the weak and susceptible input signal. At the same time, the TIAs should possess a wide dynamic range （DR） to prevent the circuit from becoming saturated by high input currents. Based on the above, this paper presents a CMOS transimpedance amplifier with high gain and a wide DR for 2.5 Gbit/s communications. The TIA proposed consists of a three-stage cascade pull push inverter, an automatic gain control circuit, and a shunt transistor controlled by the resistive divider. The inductive-series peaking technique is used to further extend the bandwidth. The TIA proposed displays a maximum transimpedance gain of 88.3 dBΩ with the -3 dB bandwidth of 1.8 GHz, exhibits an input current dynamic range from 100 nA to 10 mA. The output voltage noise is less than 48.23 nV/√Hz within the -3 dB bandwidth. The circuit is fabricated using an SMIC 0.18 μm 1P6M RFCMOS process and dissipates a dc power of 9.4 mW with 1.8 V supply voltage.

关键词： transimpedance amplifier high gain inductive-series peaking wide dynamic range

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Optimization of ohmic contact for InP-based transferred electronic devices

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Journal of Semiconductors 2014年第3期35卷 158-162页

作者：武德起丁武昌杨姗姗贾锐金智刘新宇 Key Laboratory of Microelectronics Devices & Integrated Technology Microwave Devices and Integrated Circuits Department Institute of Microelectronics Chinese Academy of Sciences School of Physics and Electrical Information Science Ningxia University

The effect of the annealing time and annealing temperature on Ni/Ge/Au electrode contacts deposited on the n-type InP contact layer has been studied using a circular transmission line model. The minimum specific contact resistance of 3.210 7 cm2was achieved on the low-doped n-type InP contact layer with a 40 s anneal at 425 ℃. In order to improve the ohmic contact and reduce the difficulty in the fabrication of the high doped InP epi-layer, the doping concentration in the InP contact layer was chosen to be 51018cm 3in the fabrication of transferred electronic devices. Excellent differential negative resistance properties were obtained by an electron beam evaporating the Ni/Ge/Au/Ge/Ni/Au composite electrode on an InP epi-layer with a 60 s anneal at 380 ℃.

关键词： circular transmission line model specific contact resistance InP transferred electronic devices differential negative resistance

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Tuning the threshold voltage of low voltage organic thin film transistor using light illumination

Tuning the threshold voltage of low voltage organic thin fil...

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2010 10th IEEE International Conference on Solid-State and Integrated Circuit technology

作者： Shang, Liwei Liu, Ming Ji, Zhuoyu Chen, Yingpin Wang, Hong Key Laboratory of Nanofabrication and Novel Devices Integration Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China

ISBN: (纸本)9781424457984

High and random voltages are big challenges for practical applications of organic thin film transistors (OTFTs). Herein, a route to achieve devices with both low operating voltages (Vop) and tunable threshold voltages (VTH) was proposed. The Vop was reduced to be less 3 V without lowering the mobility and the ratio of on/off current using a 30 nm Al2O3 insulator film fabricated by atomic layer deposition technology. And the VTH was tuned from -1.7 V to 3.8 V by using light illumination combined with voltage pulse on gate electrodes. The tuning range is nearly twice of the operating voltage. And the tuning process is highly reversible. Uniform VTH of OTFTs can be obtained without changing process or materials. ©2010 IEEE.

关键词： Threshold voltage

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Cu BEOL compatible selector with high selectivity (> 107), extremely low off-current (∼pA) and high endurance (> 1010) 61

Cu BEOL compatible selector with high selectivity (> 107), e...

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61st IEEE International Electron devices Meeting, IEDM 2015

作者： Luo, Qing Xu, Xiaoxin Liu, Hongtao Lv, Hangbing Gong, Tiancheng Long, Shibing Liu, Qi Sun, Haitao Banerjee, Writam Li, Ling Lu, Nianduan Liu, Ming Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing China Lab of Nanofabrication and Novel Devices Integration Technology Institute of Microelectronics Chinese Academy of Sciences Beijing China

ISBN: (纸本)9781467398930

Selector with high nonlinearity and low leakage current is critical to solve the sneaking current issue in crossbar memory array. In this work' we present a high performance Cu BEOL compatible threshold switching (TS) selector with several outstanding features' such as high nonlinearity (∼107)' ultra-low off-state leakage current (∼pA)' robust endurance (> 1010)' and sufficient on-state current density (∼1 MA/cm2). The observed threshold switching is resulted from the spontaneously rupture of conductive filament in doped HfO2 material. By introducing a tunneling layer in series with the TS layer' the leakage current of the selector is dramatically reduced by more than 5 orders of magnitude. The array level benchmark of this TS selector qualifies its promising potential for 3D storage application. © 2015 IEEE.

关键词： Leakage currents

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