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An AuNPs/Mesoporous NiO/Nickel Foam Nanocomposite as a Miniaturized Electrode for Heavy Metal Detection in Groundwater

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Engineering 2023年第8期27卷 199-208页

作者： Boyuan Xue Qian Yang Kaidong Xia Zhihong Li George Y.Chen Dayi Zhang Xiaohong Zhou State Key Joint Laboratory of Environment Simulation and Pollution Control School of EnvironmentTsinghua UniversityBeijing 100084China National Key Laboratory of Science and Technology on Micro/Nano Fabrication Institute of MicroelectronicsPeking UniversityBeijing 100871China Shenzhen Key Laboratory of Photonic Devices and Sensing Systems for Internet of Things Guangdong and Hong Kong Joint Research Centre for Optical Fiber SensorsShenzhen UniversityShenzhen 518060China College of New Energy and Environment Jilin UniversityChangchun 130021China The Research Institute of Environmental Innovation(Suzhou) Tsinghua UniversitySuzhou 215000China

Heavy metals,notably Pb2+and Cu^(2+),are some of the most persistent contaminants found in *** monitoring of these metals,which relies on efficient,sensitive,cost-effective,and reliable methods,is a *** present a nanocomposite-based miniaturized electrode for the concurrent measurement of Pb2+and Cu^(2+)by exploiting the electroanalytical technique of square wave *** also propose a facile in situ hydrothermal calcination method to directly grow binder-free mesoporous Ni O on a three-dimensional nickel foam,which is then electrochemically seeded with gold nanoparticles(Au NPs).The meticulous design of a low-barrier Ohmic contact between mesoporous Ni O and Au NPs facilitates target-mediated nanochannel-confined electron transfer within mesoporous Ni *** a result,the heavy metals Pb2+(0.020 mg.L^(-1)detection limit;2.0–16.0 mg.L^(-1)detection range)and Cu^(2+)(0.013 mg.L^(-1)detection limit;0.4–12.8 mg.L^(-1)detection range)can be detected simultaneously with high ***,other heavy metal ions and common interfering ions found in groundwater showed negligible impacts on the electrode’s performance,and the recovery rate of groundwater samples varied between 96.3%±2.1%and 109.4%±0.6%.The compactness,flexible shape,low power consumption,and ability to remotely operate our electrode pave the way for onsite detection of heavy metals in groundwater,thereby demonstrating the potential to revolutionize the field of environmental monitoring.

关键词： AuNPs Mesoporous NiO Miniaturized electrode Heavy metal ions Groundwater Square wave voltammetry

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Scaling Dual-Gate Ultra-thin a-IGZO FET to 30 nm Channel Length with Record-high Gm,maxof 559 S/m at VDS=1 V, Record-low DIBL of 10 mV/V and Nearly Ideal SS of 63 mV/dec

Scaling Dual-Gate Ultra-thin a-IGZO FET to 30 nm Channel Len...

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2022 IEEE Symposium on VLSI technology and Circuits, VLSI technology and Circuits 2022

作者： Chen, Kaifei Niu, Jiebin Yang, Guanhua Liu, Menggan Lu, Wendong Liao, Fuxi Huang, Kailiang Duan, XinLv Lu, Congyan Wang, Jiawei Wang, Lingfei Li, Mengmeng Geng, Di Zhao, Chao Wang, Guilei Lu, Nianduan Li, Ling Liu, Ming Chinese Academy of Sciences Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics Beijing China University of Chinese Academy of Sciences Beijing China Beijing Superstring Academy of Memory Technology 100176 China

ISBN: (纸本)9781665497725

We experimentally prove that amorphous IGZO FET can be scaled down by connected dual-gate design with enhanced electrostatic control. By connected dual-gate operation and scaled dual stacks, the short channel device (LCH=30 nm) achieves near ideal SS of 63 mV/dec and ultra-high on-state current (ION) of 615 A/m at VGS-VTH=2 V&VDS=1 V. By this design, record-high transconductance (Gm) of 559 S/m at VDS=1 V and record-low drain-induced-barrier-lowering (DIBL) of 10 mV/V are achieved, to our best knowledge, among all the a-IGZO transistors with sub-100 nm channel length reported so far. © 2022 IEEE.

关键词： Semiconducting indium compounds

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Fabrication of Y-cut LiNbO3 Single Crystalline Film and SAW Resonator on Flexible Polyimide Substrate

Fabrication of Y-cut LiNbO3 Single Crystalline Film and SAW ...

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2024 IEEE International Conference on Integrated Circuits, Technologies and Applications, ICTA 2024

作者： Gao, Yizhuo Luo, Wenbo Huang, Shitian Fan, Wei Zhu, Dailei Wang, Xu Pan, Xinqiang Shuai, Yao Wu, Chuangui Zhang, Wanli University of Electronic Science and Technology of China School of Integrated Circuit Science and Engineering Chengdu610054 China University of Electronic Science and Technology of China State Key Laboratory of Electronic Thin Films and Integrated Devices Chengdu610054 China Chongqing Institute of Microelectronics Industry Technology UESTC Chongqing401332 China

ISBN: (纸本)9798331530709

Flexible surface acoustic wave (SAW) resonators on single crystal LiNbO3(LN) film have been successfully fabricated using benzocyclobutene bonding and crystal ion slicing technology. The effects of Polyimide (PI) thickness on the properties of LN film have been studied. 960 nm LN single crystal films without cracks have been transferred to 25 μ ∼m PI substrates, which are used to construct flexible SAW resonators. The flexible SAW resonators show well frequency-strain response characteristics. These results demonstrated that LN single crystal film on PI substrate and its SAW resonator is a promising candidate in flexible electronic devices. © 2024 IEEE.

关键词： Saws

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3D printing in space:from mechanical structures to living tissues

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International Journal of Extreme Manufacturing 2024年第2期6卷 378-387页

作者： Mao Mao Zijie Meng Xinxin Huang Hui Zhu Lei Wang Xiaoyong Tian Jiankang He Dichen Li Bingheng Lu State Key Laboratory for Manufacturing Systems Engineering Xi’an Jiaotong UniversityXi’an 710049People’s Republic of China National Medical Products Administration(NMPA)Key Laboratory for Research and Evaluation of Additive Manufacturing Medical Devices Xi’an Jiaotong UniversityXi’an 710049People’s Republic of China National Innovation Platform(Center)for Industry-Education Integration of Medical Technology Xi’an Jiaotong UniversityXi’an 710049People’s Republic of China Frontier Institute of Science and Technology Xi’an Jiaotong UniversityXi’an 710049People’s Republic of China National Innovation Institute of Additive Manufacturing Xi’an 710000People’s Republic of China

3D printing stands at the forefront of transforming space exploration,offering unprecedented on-demand and rapid manufacturing *** adeptly addresses challenges such as mass reduction,intricate component fabrication,and resource *** the obstacles posed by microgravity and extreme environments,continual advancements underscore the pivotal role of 3D printing in aerospace *** its primary function of producing space structures,3D printing contributes significantly to progress in electronics,biomedicine,and resource *** perspective delves into the technological advantages,environmental challenges,development status,and opportunities of 3D printing in *** its crucial impact,we anticipate that 3D printing will unlock innovative solutions,reshape manufacturing practices,and foster self-sufficiency in future space endeavors.

关键词： 3D printing in space space manufacturing microgravity

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3D Reservoir Computing with High Area Efficiency (5.12 TOPS/mm2) Implemented by 3D Dynamic Memristor Array for Temporal Signal Processing

3D Reservoir Computing with High Area Efficiency (5.12 TOPS/...

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2022 IEEE Symposium on VLSI technology and Circuits, VLSI technology and Circuits 2022

作者： Sun, Wenxuan Zhang, Woyu Yu, Jie Li, Yi Guo, Zeyu Lai, Jinru Dong, Danian Zheng, Xu Wang, Fei Fan, Shaoyang Xu, Xiaoxin Shang, Dashan Liu, Ming Institute of Microelectronics of Chinese Academy of Sciences Key Laboratory of Microelectronic Devices and Integrated Technology Beijing China University of Chinese Academy of Sciences Beijing China University of Science and Technology of China School of Microelectronics China

ISBN: (纸本)9781665497725

In this work, we realized a three-dimensional (3D) reservoir computing (RC) by utilizing the I-V nonlinearity and short-term memory of the dynamic memristor in 4-layer vertical array. The cycle-to-cycle variation of the dynamic reservoir is improved by parallel memristor configuration. The dimensionality of the reservoir space is increased by input strategy design. After the hardware-software co-optimization, the proposed 3D RC system exhibits high recognition accuracy (90%), low energy consumption (-0.78 pJ /operation), and high area efficiency (5.12 TOPS/mm2). © 2022 IEEE.

关键词： Memristors

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Flash-based in-memory computing for stochastic computing in image edge detection

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Journal of Semiconductors 2023年第5期44卷 145-149页

作者： Zhaohui Sun Yang Feng Peng Guo Zheng Dong Junyu Zhang Jing Liu Xuepeng Zhan Jixuan Wu Jiezhi Chen School of Information Science and Engineering(ISE) Shandong UniversityQingdao 266000China Shandong Sinochip Semiconductors Co.Ltd Jinan 250101China Neumem Co. LtdHefei 230088China Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics of Chinese Academy of SciencesBeijing 100029China

The“memory wall”of traditional von Neumann computing systems severely restricts the efficiency of data-intensive task execution,while in-memory computing(IMC)architecture is a promising approach to breaking the *** variations and instability in ultra-scaled memory cells seriously degrade the calculation accuracy in IMC architectures,stochastic computing(SC)can compensate for these shortcomings due to its low sensitivity to cell ***,massive parallel computing can be processed to improve the speed and efficiency of the *** this paper,by designing logic functions in NOR flash arrays,SC in IMC for the image edge detection is realized,demonstrating ultra-low computational complexity and power consumption(25.5 fJ/pixel at 2-bit sequence length).More impressively,the noise immunity is 6 times higher than that of the traditional binary method,showing good tolerances to cell variation and reliability degradation when implementing massive parallel computation in the array.

关键词： in-memory computing stochastic computing NOR flash memory image edge detection

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Methods to improve the PCM yield of 12µm vanadium oxide uncooled infrared detector mass production process on 200mm Wafers 10

Methods to improve the PCM yield of 12µm vanadium oxide unc...

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10th Symposium on Novel Optoelectronic Detection technology and Applications

作者： Ning, Ning Zhou, HongXi Zhang, QiYu Gong, XiHuai Cai, ShengDong Si, Jing Peng, Pan Peng, LuLu Pan, BoJin Jiang, YaDong School of Optoelectronic Science and Engineering University of Electronic Science and Technology of China Chengdu610054 China State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu610054 China United Microelectronics Center Co. Ltd. Chongqing401332 China

ISBN: (数字)9781510688155

ISBN: (纸本)9781510688148

To address the technological challenges associated with mass production of 12 µm vanadium oxide (VOx) uncooled infrared detectors on the 200 mm fabrication platform, research efforts were focused on enhancing the electrical Process Control Monitoring (PCM) yield of the platform. The Titanium-enhanced Anchor process and low-stress silicon nitride films were applied to resolve issues such as poor connectivity of pixel contact chains, stress mismatch between low-temperature silicon nitride films and detector structures, and insufficient sidewall coverage. This approach resulted in a significant reduction in the failure rate of the detector's pixel via chain structure, effectively addressing issues such as pixel structure collapse due to stress mismatch and premature PI release caused by inadequate sidewall coverage. The PCM yield associated with the detector process improved to over 95%, thereby meeting the mass production requirements for the detector product. © 2025 SPIE.

关键词： Silicon nitride

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Enhancing the Avalanche Ionization Integral to 0.24 in GaN Schottky Barrier Diodes Utilizing a Self-Aligned Anode Structure

Enhancing the Avalanche Ionization Integral to 0.24 in GaN S...

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IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)

作者： Jianhua Zhou Lin’An Yang Xuan Huang Xinyi Wang Xiaohua Ma Yue Hao State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology School of Microelectronics Xidian University Xi’an China

ISBN: (数字)9798331520717

ISBN: (纸本)9798331520724

we have experimentally investigated gallium nitride (GaN) Schottky barrier diodes including a self-aligned anode structure, exhibiting superior avalanche breakdown capability. The results reveal that the self-aligned anode structure significantly elevates the breakdown voltage from 38.5 V of the conventional structure to 69 V. Meanwhile, the peak electric field at the anode/GaN interface is improved to $2.60 \mathrm{MV} / \mathrm{cm}$, approaching the ideal value of $3.37 \mathrm{MV} / \mathrm{cm}$, with a corresponding avalanche ionization integral of 0.24, which has greater potential to realize impact ionization avalanche transit-time (IMPATT) diodes oscillation.

关键词： Radio frequency Schottky diodes Electric potential Schottky barriers Microwave oscillators Anodes Gallium nitride Electric fields Optimization Passivation

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A Ku-Band Broadband High-Efficiency GaAs MMIC Power Amplifier

A Ku-Band Broadband High-Efficiency GaAs MMIC Power Amplifie...

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International Conference on Microwave and Millimeter Wave technology Proceedings

作者： Guanghai Yao Huanhuan Jia Ziyue Zhao Yang Lu Chupeng Yi Xin Liu Ting Feng Lin-an Yang Xiaohua Ma State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology School of Microelectronics Xidian University Xi'an China

ISBN: (数字)9798350389968

ISBN: (纸本)9798350389975

This work uses $0.25-\mu \mathrm{m}$ GaAs pHEMT technology to design a 11.7-17.6 GHz broadband high-efficiency monolithic microwave integrated circuit (MMIC) amplifier. An equivalent impedance model matching technology is used to improve the bandwidth of the power amplifiers (PAs). Compared with the traditional single impedance point matching method, our design can obtain a more accurate impedance transformation trajectory, thereby ensuring broadband matching. The simulation results show that when the drain voltage is 5 V, the power-added efficiency (PAE) of the amplifier in the 11.7-17.6 GHz is greater than 34.6%, the peak P AE reaches 38.8%, and the output power (Pout) is greater than 31 dBm (1.3 W), while providing a gain greater than 20 dB. The designed P A stands out with its wide bandwidth and high P AE.

关键词： Broadband amplifiers Gallium arsenide PHEMTs Power amplifiers Microwave circuits Microwave amplifiers Impedance

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A 3.3-3.7 GHz High-Linearity and Large-Backoff Doherty Amplifier

A 3.3-3.7 GHz High-Linearity and Large-Backoff Doherty Ampli...

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International Conference on Microwave and Millimeter Wave technology Proceedings

作者： Zexiang Li Chupeng Yi Yang Lu Ziyue Zhao Xin Liu Ting Feng Xiaohua Ma State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology School of Microelectronics Xidian University Xi'an China

ISBN: (数字)9798350389968

ISBN: (纸本)9798350389975

An asymmetric Doherty power amplifier with saturated output power greater than 35 dBm, amplitude-to-phase distortion (AM-PM) less than 5 and power back-off of 9 dB is designed based on the 0.25-μm GaN process. To enhance the gain, a cascaded driver stage is employed before the Doherty power amplifier. Introducing mismatches between the driver stages and AM-PM compensation between the driver stage and the Doherty power amplifier stabilizes linearity. Simulation results show that at 3.3-3.7 GHz, the overall saturated output power exceeds 35 dBm, power gain exceeds 28 dB, and power-added efficiency (PAE) exceeds 38%. Meanwhile, at 9 dB back-off from saturated output power, PAE reaches 29%-32%, AM-PM distortion is less than 5, and the layout size is 3.3 mm*2 mm.

关键词： Microwave technology Microwave integrated circuits Simulation Layout Millimeter wave technology Power amplifiers Linearity

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