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检索条件"机构=Key Laboratory of Microelectronics Devices and Integration Technology"
1334 条 记 录,以下是171-180 订阅
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The impacts of total ionizing dose irradiation on NOR Flash memory  13
The impacts of total ionizing dose irradiation on NOR Flash ...
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2016 13th IEEE International Conference on Solid-State and Integrated Circuit technology (ICSICT)
作者: Jinshun Bi Jin Li Lanlong Ji Hongyang Hu Ming Liu Key Laboratory of Microelectronics Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences
The impacts of total ionizing dose by cobalt60 on the 4 Mb Serial Peripheral Interface NOR Flash memory are studied in detail. Eletrical parameters degradation and unidirectioanl upsets are demonstrated with physical ... 详细信息
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Boosting hydrogen evolution via flexoelectric catalysis in gradient F-doped hydroxyapatite nanowires
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Chemical Science 2025年 2025 May 2页
作者: Zhang, Yucheng Huang, Jiawei Jiang, Lei Qiang, Jun Zhang, Zhouyang Liu, Zhanfeng Liu, Yi Tian, Tingfang Wang, Zhao Fei, Linfeng School of Physics and Materials Science Jiangxi Provincial Key Laboratory of Photodetectors Nanchang University Jiangxi Nanchang330031 China Hubei Key Laboratory of Micro- & Nanoelectronic Materials and Devices School of Microelectronics Hubei University Hubei Wuhan430062 China School of Mechanical Engineering Ningxia University Ningxia 750021 Yinchuan China School of Materials and New Energy Ningxia University Ningxia Yinchuan750021 China National Synchrotron Radiation Laboratory University of Science and Technology of China Anhui Hefei230029 China
The emergence of flexoelectric effect, which refers to the linear electromechanical coupling between strain gradient and charge polarization in a wide range of materials, suggests a new catalytic mechanism to activate... 详细信息
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Effects of a carbon implant on thermal stability of Ni_(0.95)(Pt_(0.05))Si
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Journal of Semiconductors 2015年 第6期36卷 25-28页
作者: 冯帅 赵利川 张青竹 杨鹏鹏 唐兆云 闫江 吴次南 Key Laboratory of Microelectronics Devices & Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences College of Big Data and Information Engineering Guizhou University
The effects of a carbon implant on thermal stability of Ni0.95(Pt0.05)Si films are investigated by im- planting carbon of different doses into Si substrates before silicidation with two steps of rapid thermal anneal... 详细信息
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A simulation analysis of performance of both implanted doping and in situ doping ETSOI PMOSFETs
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Journal of Semiconductors 2015年 第4期36卷 180-184页
作者: 冯帅 赵利川 张青竹 杨鹏鹏 唐兆云 吴次南 闫江 College of Big Data and Information Engineering Guizhou University Key Laboratory of Microelectronics Devices & Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences
Extremely thin silicon on insulator p-channel metal oxide-semiconductor field-effect transistors (PMOSFETs) with implanted doping and in situ doping are analyzed by TCAD simulation. The critical characteris- tic par... 详细信息
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Dehydroxylation action on surface of TiO_2 films restrained by nitrogen carrier gas during atomic layer deposition process
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Rare Metals 2014年 第5期33卷 583-586页
作者: Zhi-Peng Rao Bang-Wu Liu Chao-Bo Li Yang Xia Jun Wan Key Laboratory of Microelectronic Devices and Integration Technology Institute of Microelectronics Chinese Academy of Sciences Jiaxing Research and Commercialization Center for Microelectronics Equipment Zhejiang Institute of Advanced Technology Chinese Academy of Sciences Jiaxing Kemin Electronic Equipment & Technologies Co. LtdZhejiang Institute of Advanced Technology Chinese Academy of Sciences
A strong influence of nitrogen gas on the content of surface hydroxyl groups of TiO2 films by atomic layer deposition(ALD) was investigated by X-ray photoelectron spectroscopy(XPS), contact angle measuring system,... 详细信息
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Sub-micrometer organic field effect transistors
Sub-micrometer organic field effect transistors
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ISTC/CSTIC 2009 (CISTC)
作者: Shang, L. Liu, M. Ji, Z. Liu, G. Liu, X. Liu, J. Wang, H. Key Laboratory of Nanofabrication and Novel Devices Integration Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China
Pentacene organic field effect transistors with a series of submicrometer channel have been fabricated and characterized. Source and drain metal electrodes was made by electron-beam lithography and lift-off process. I... 详细信息
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A high gain wide dynamic range transimpedance amplifier for optical receivers
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Journal of Semiconductors 2014年 第1期35卷 78-83页
作者: 刘帘曦 邹姣 恩云飞 刘术彬 牛越 朱樟明 杨银堂 School of Microelectronics Xidian University Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices National Key Laboratory of Science and Technology on Reliability Physics and Application Technology of Electrical Component
As the front-end preamplifiers in optical receivers, transimpedance amplifiers (TIAs) are commonly required to have a high gain and low input noise to amplify the weak and susceptible input signal. At the same time,... 详细信息
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Optimization of ohmic contact for InP-based transferred electronic devices
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Journal of Semiconductors 2014年 第3期35卷 158-162页
作者: 武德起 丁武昌 杨姗姗 贾锐 金智 刘新宇 Key Laboratory of Microelectronics Devices & Integrated Technology Microwave Devices and Integrated Circuits Department Institute of Microelectronics Chinese Academy of Sciences School of Physics and Electrical Information Science Ningxia University
The effect of the annealing time and annealing temperature on Ni/Ge/Au electrode contacts deposited on the n-type InP contact layer has been studied using a circular transmission line model. The minimum specific conta... 详细信息
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Tuning the threshold voltage of low voltage organic thin film transistor using light illumination
Tuning the threshold voltage of low voltage organic thin fil...
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2010 10th IEEE International Conference on Solid-State and Integrated Circuit technology
作者: Shang, Liwei Liu, Ming Ji, Zhuoyu Chen, Yingpin Wang, Hong Key Laboratory of Nanofabrication and Novel Devices Integration Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China
High and random voltages are big challenges for practical applications of organic thin film transistors (OTFTs). Herein, a route to achieve devices with both low operating voltages (Vop) and tunable threshold voltages... 详细信息
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Cu BEOL compatible selector with high selectivity (> 107), extremely low off-current (∼pA) and high endurance (> 1010)  61
Cu BEOL compatible selector with high selectivity (> 107), e...
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61st IEEE International Electron devices Meeting, IEDM 2015
作者: Luo, Qing Xu, Xiaoxin Liu, Hongtao Lv, Hangbing Gong, Tiancheng Long, Shibing Liu, Qi Sun, Haitao Banerjee, Writam Li, Ling Lu, Nianduan Liu, Ming Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing China Lab of Nanofabrication and Novel Devices Integration Technology Institute of Microelectronics Chinese Academy of Sciences Beijing China
Selector with high nonlinearity and low leakage current is critical to solve the sneaking current issue in crossbar memory array. In this work' we present a high performance Cu BEOL compatible threshold switching ... 详细信息
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