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GaN chips for monitoring density and temperature of lead-acid batteries

Chip 2025年

作者： Zhiyong Ye Ganyuan Deng Dongmiao Liu Jingyan Wang Xiaodi Gao Kwai Hei Li Ling Zhu College of Physics and Optoelectronic Engineering Shenzhen University Shenzhen 518060 China School of Microelectronics Southern University of Science and Technology Shenzhen 518055 China Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province Shenzhen University Shenzhen 518060 China State Key Laboratory of Radio Frequency Heterogeneous Integration Shenzhen University Shenzhen 518060 China

Lead-acid batteries are indispensable in various applications, and monitoring their status is crucial. However, the existing sensing units for lead-acid batteries are limited by their bulky size, slow response time, and lack of temperature sensing and compensation capabilities. This work proposes a compact GaN-based sensing device to simultaneously measure electrolyte density and temperature. The device comprises a light-emitting diode (LED) and a photodetector (PD) integrated on a GaN-on-sapphire chip in a monolithic configuration. The forward voltage of the LED reflects the electrolyte temperature, while the photocurrent of the PD varies with electrolyte density due to optical reflection changes at the exposed sapphire interface. The measured signals are processed using a decoupling matrix to achieve temperature compensation. The device exhibits a sensitivity of -29.1 μA/(g/cm 3 ) for density in the range of 1.09 g/cm 3 to 1.29 g/cm 3 , and -1.07 mV/°C for temperature in the range of 25 °C to 45 °C. The performance of the device is also validated through comparisons with commercial meters and real-time monitoring during the charging and discharging of the batteries. The device has notable advantages in size, cost, and fast response/recovery time (134.3/201.4 ms), rendering it a promising tool for monitoring lead-acid batteries.

关键词： GaN Lead-acid battery density Battery temperature

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Proton Irradiation Effects and Annealing Behaviors of 16Mb Magneto-resistive Random Access Memory(MRAM) 13

Proton Irradiation Effects and Annealing Behaviors of 16Mb M...

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2016 13th IEEE International Conference on Solid-State and Integrated Circuit technology (ICSICT)

作者： Haohao Zhang Jinshun Bi Yuan Duan Yannan Xu Ming Liu the Key Laboratory of Microelectronics Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing Jiaotong University

ISBN: (纸本)9781467397209

This paper presents the 3 Me V proton irradiation results of a 16 Mb commercial MRAM. The total ionizing dose（TID） effects induced by proton irradiaton and the following room temperature annealing behaviors are analyzed in detail. Read bit errors and electrical failures were observed when the proton fluence was accumulated to 2.5×10 particles/cm. The peripheral circuits are more sensitive to proton irradiation. These results are useful for hardening MRAM designs aiming at space-borne applications.

关键词： Proton Irradiation Effects and Annealing Behaviors of 16Mb Magneto-resistive Random Access Memory

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Thermal effect on endurance performance of 3-dimensional RRAM crossbar array

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Chinese Physics B 2016年第5期25卷 253-257页

作者：卢年端孙鹏霄李泠刘琦龙世兵吕杭炳刘明 Key Laboratory of Microelectronics Devices&Integrated Technology Institute of Microelectronics of Chinese Academy of SciencesBeijing 100029China Jiangsu National Synergetic Innovation Center for Advanced Materials Nanjing 210000China

Three-dimensional（3D） crossbar array architecture is one of the leading candidates for future ultra-high density nonvolatile memory applications. To realize the technological potential, understanding the reliability mechanisms of the3 D RRAM array has become a field of intense research. In this work, the endurance performance of the 3D 1D1 R crossbar array under the thermal effect is investigated in terms of numerical simulation. It is revealed that the endurance performance of the 3D 1D1 R array would be seriously deteriorated under thermal effects as the feature size scales down to a relatively small value. A possible method to alleviate the thermal effects is provided and verified by numerical simulation.

关键词： 3-dimensional resistive random access memory（RRAM） thermal effect endurance performance

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Radio-frequency transistors from millimeter-scale graphene domains

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Chinese Physics B 2014年第11期23卷 470-475页

作者：魏子钧傅云义刘竞博王紫东贾越辉郭剑任黎明陈远富张酣黄如张兴 Institute of Microelectronics Peking University State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China School of Physics Peking University

Graphene is a new promising candidate for application in radio-frequency （RF） electronics due to its excellent elec- tronic properties such as ultrahigh carrier mobility, large threshold current density, and high saturation velocity. Recently, much progress has been made in the graphene-based RF field-effect transistors （RF-FETs）. Here we present for the first time the high-performance top-gated RF transistors using millimeter-scale single graphene domain on a SiO2/Si substrate through a conventional microfabrication process. A maximum cut-off frequency of 178 GHz and a peak maximum os- cillation frequency of 35 GHz are achieved in the graphene-domain-based FET with a gate length of 50 nm and 150 nm, respectively. This work shows that the millimeter-scale single graphene domain has great potential applications in RF devices and circuits.

关键词： millimeter-scale graphene domain radio-frequency transistor cut-off frequency maximum oscil-lation frequency

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Evolution of optical properties and molecular structure of PCBM films under proton irradiation

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Chinese Physics B 2022年第5期31卷 582-587页

作者： Guo-Dong Xiong Hui-Ping Zhu Lei Wang Bo Li Fa-Zhan Zhao Zheng-Sheng Han Key Laboratory of Science and Technology on Silicon Devices Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China University of the Chinese Academy of Sciences Beijing 100049China

Low-energy proton irradiation effects on the optical properties and the molecular structure of phenyl-C_(61)-butyric acid methyl ester(PCBM)are studied in this *** PCBM films are irradiated by 100-keV proton beams with fluences of 5×10^(12)p/cm^(2),5×10^(13)p/cm^(2),and 5×10^(14)p/cm^(2),*** photoluminescence(PL)peaks of the post-irradiated PCBM films show a progressive decrease in the peak intensity as the proton fluences increase,which can be attributed to the deep defect levels induced by proton ***,a slight blue-shift in the PL spectrum is also observed at a proton fluence of 5×10^(14)p/cm^(2).The underlying mechanism can be traced back to the lift of the lowest unoccupied molecular orbital(LUMO)level,which is caused by the attachment of methoxy radicals on ortho position of the phenyl ring in the post-irradiated PCBM *** work is of significance in understanding the radiation hardness and the damage mechanism of the PCBM film in radiation environments,which is essential before it is put into practical application in space.

关键词： PCBM proton irradiation effects optical property molecular structure

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Fabrication of 11-nm-Wide Silica-Like Lines Using X-Ray Diffraction Exposure

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中国物理快报（英文版） 2009年第8期26卷 271-273页

作者： ZHU Xiao-Li XIE Chang-Qing ZHANG Man-Hong LIU Ming CHEN Bao-Qin PAN Feng Laboratory of Advanced Materials Department of Materials Science and EngineeringTsinghua UniversityBeijing 100084 Key Laboratory of Nano-fabrication and Novel Devices Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijin Key Laboratory of Nano-fabrication and Novel Devices Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029 Laboratory of Advanced Materials Department of Materials Science and EngineeringTsinghua UniversityBeijing 100084

Fine silica-like lines with 11 nm width are successfully fabricated using x-ray Fresnel diffraction exposure. X-rays pass a mask of 175-nm-wide lines and 125-nm-wide spaces and form sharp peaks on a wafer coated with a layer of hydrogen silsesquioxane resist (HSQ). By precisely controlling the mask-wafer gap at 10 μm using the laser interferogram method, the fine structures are defined on HSQ. Experimental images are reproduced by a simulation using the one-dimensional beam propagation method. This lithographic technique presents a novel and convenient way to fabricate fine silica-like structures and devices in nano-optical and nanoelectronic applications.

关键词： MICROFABRICATION X-ray diffraction SILICA SEMICONDUCTOR wafers SURFACE coatings BEAM dynamics SIMULATION methods & models LITHOGRAPHY techniques NANOELECTRONICS

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Electronic transport properties of an (8,0) carbon/silicon-carbide nanotube heterojunction

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Journal of Semiconductors 2009年第5期30卷 5-8页

作者：刘红霞张鹤鸣张志勇 Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices School of MicroelectronicsXidian University Institute of Information Science and Technology Northwest University

A two-probe system of the heterojunction formed by an （8, 0） carbon nanotube （CNT） and an （8, 0） silicon carbide nanotube （SiCNT） was established based on its optimized structure. By using a method combining nonequilibrium Green＇s function （NEGF） with density functional theory （DFF）, the transport properties of the het-erojunction were investigated. Our study reveals that the highest occupied molecular orbital （HOMO） has a higher electron density on the CNT section and the lowest unoccupied molecular orbital （LUMO） mainly concentrates on the interface and the SiCNT section. The positive and negative threshold voltages are ＋1.8 and -2.2 V, respectively.

关键词： carbon/silicon carbide nanotube heterojunction nonequilibrium Green＇s function transport properties

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Design and research of normally-offβ-Ga_(2)O_(3)/4H-SiC heterojunction field effect transistor

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Chinese Physics B 2023年第3期32卷 461-466页

作者：程梅霞栾苏珍王海林贾仁需 The Key Laboratory of Heterogeneous Network Convergence Communication Xi'an University of Science and TechnologyXi'an 710600China The Key Laboratory of Wide Band Gap Semiconductor Materials and Devices School of MicroelectronicsXidian UniversityXi'an 710071China

Ga_(2)O_(3)is difficult to achieve p-type doping,which further hinders the development of Ga_(2)O_(3)-based power devices and is not conducive to the development of new devices with high power density and low power *** paper expounds aβ-Ga_(2)O_(3)/4H-SiC heterojunction lateral metal–oxide–semiconductor field-effect transistor(HJFET),which can make better use of the characteristics of PN junction by adding p-doped SiC in the channel *** with the conventional devices,the threshold voltage of the heterojunction metal–oxide–semiconductor field-effect transistor(MOSFET)is greatly improved,and normally-off operation is realized,showing a positive threshold voltage of 0.82 ***,the off-state breakdown voltage of the device is up to 1817 V,and the maximum transconductance is 15.3 mS/*** optimal PFOM is obtained by simulating the thickness,length and doping of the SiC in each region of the epitaxial *** structure provides a feasible idea for high performanceβ-Ga_(2)O_(3)MOSFET.

关键词： MOSFET heterojunction threshold voltage

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Electronic transport properties of an(8,0) carbon/boron nitride nanotube heterojunction

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Chinese Physics B 2010年第3期19卷 445-449页

作者：刘红霞张鹤鸣宋久旭张志勇 Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices School of Microelectronics Xidian University Information Science and Technology Institution Northwest University

The structure of a heterojunction made up of an （8, 0） carbon nanotube and an （8, 0） boron nitride nanotube is achieved through geometry optimization implemented in the CASTEP package. Based on the optimized geometry, the model of the heterojunction is established. Its transport properties are investigated by combining the nonequilibrium Green＇s function with density functional theory. Results show that both the lowest unoccupied molecular orbital and the highest occupied molecular orbital mainly locate on the carbon nanotube section. In the current-voltage characteristic of the heterojunction, a rectification feature is revealed.

关键词： nanotube heterojunction nonequilibrium Green＇s function transport properties

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A 6-bit 3-Gsps ADC implemented in 1μ m GaAs HBT technology

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Journal of Semiconductors 2014年第8期35卷 145-150页

作者：张金灿张玉明吕红亮张义门肖广兴叶桂平 School of Microelectronics Xidian University Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices Electrical Engineering College Henan University of Science and Technology

The design and test results of a 6-bit 3-Gsps analog-to-digital converter （ADC） using 1 μm GaAs het- erojunction bipolar transistor （HBT） technology are presented. The monolithic folding-interpolating ADC makes use of a track-and-hold amplifier （THA） with a highly linear input buffer to maintain a highly effective number of bits （ENOB）. The ADC occupies an area of 4.32 × 3.66 mm2 and achieves 5.53 ENOB with an effective resolution bandwidth of 1.l GHz at a sampling rate of 3 Gsps. The maximum DNL and INL are 0.36 LSB and 0.48 LSB, respectively.

关键词： analog-to-digital converter GaAs HBT folding interpolating

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