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AlO_x prepared by atomic layer deposition for high efficiency-type crystalline silicon solar cell

Chinese Physics B 2014年第2期23卷 448-451页

作者：仇洪波李惠琪刘邦武张祥沈泽南 School of Materials Science and Engineering Shandong University of Science and Technology Key Laboratory of Microelectronic Devices and Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences

The influence of atomic layer deposition parameters on the negative charge density in AlOx film is investigated by the corona-charge measurement. Results show that the charge density can reach up to -1.56×10^12 cm%-2 when the thickness of the film is 2.4 nm. The influence of charge density on cell conversion efficiency is further simulated using solar cell analyzing software （PC1D）. With AlOx passivating the rear surface of the silicon, the cell efficiency of 20.66% can be obtained.

关键词： AlOx atomic layer deposition p-type negative charge density solar cell analyzing software

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Gate-enclosed NMOS transistors

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Journal of Semiconductors 2011年第8期32卷 40-45页

作者：范雪李平李威张斌谢小东王刚胡滨翟亚红 School of Microelectronics and Solid-State Electronics State Key Laboratory of Electronic Thin Films and Integrated DevicesUniversity of Electronic Science and Technology of China

In order to quantitatively compare the design cost and performance of various gate styles,NMOS transistors with two-edged,annular and ring gate layouts were designed and fabricated by a commercial 0.35μm CMOS *** comparing the minimum W/L ratios and transistor areas,it was found that either the annular layout or its ring counterpart incurs a higher area penalty that depends on the W/L ratio of the transistor to be designed. Furthermore,by comparing the output and transfer characteristics of the transistors and analyzing the popular existing methods for extracting the effective W/L ratio,it was shown that the mid-line approximation for annular NMOS could incur an error of more than 10%.It was also demonstrated that the foundry-provided extraction tool needs significant adaptation when being applied to the enclosed-gate transistors,since it is targeted only toward the two-edged transistor.A simple approach for rough extraction of the W/L ratio for the ring-gate NMOS was presented and its effectiveness was confirmed by the experimental results with an error up to 8%.

关键词： radiation total ionizing dose gate-enclosed transistor annular NMOS ring NMOS

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Dielectric thin films for GaN-based high-electron-mobility transistors

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Rare Metals 2015年第6期34卷 371-380页

作者： Yan-Rong Li Xing-Zhao Liu Jun Zhu Ji-Hua Zhang Lin-Xuan Qian Wan-Li Zhang State Key Laboratory of Electronic Thin Films and Integrated Devices School of Microelectronics and Solid-State Electronics University of Electronic Science and Technology of China

The effects of dielectric thin films on the performance of GaN-based high-electron-mobility transistors （HEMTs） were reviewed in this work. Firstly, the nonpolar dielectric thin films which act as both the surface passivation layers and the gate insulators of the high-frequency GaN-based high-electron-mobility transistors were presented. Furthermore, the influences of dielectric thin films on the electrical properties of two-dimensional electron gas （2DEG） in the A1GaN/GaN hetero-structures were ana- lyzed. It was found that the additional in-plane biaxial tensile stress was another important factor besides the change in surface potential profile for the device perfor- mance improvement of the A1GaN/GaN HEMTs with dielectric thin films as both passivation layers and gate dielectrics. Then, two kinds of polar gate dielectric thin films, the ferroelectric LiNbO3 and the fluorinated A1203, were compared for the enhancement-mode GaN-based HEMTs, and an innovative process was proposed. At last, high-permittivity dielectric thin films were adopted as passivation layers to modulate the electric field and accordingly increase the breakdown voltage of GaN-based HEMTs. Moreover, the polyimide embedded with Cr particles effectively increased the breakdown voltage of GaNbased HEMTs. Finally, the effects of high-permittivity dielectric thin films on the potential distribution in the drift region were simulated, which showed an expanded electric field peak at the drain-side edge of gate electrode.

关键词： GaN-based HEMTs Surface passivation Gate dielectrics Enhancement-mode HEMTs High-permittivity field plate

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Small-signal modeling of GaN HEMT switch with a new intrinsic elements extraction method

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Chinese Physics B 2016年第11期25卷 446-452页

作者：耿苗李培咸罗卫军孙朋朋张蓉马晓华 School of Advanced Materials and Nanotechnology Xidian University Xi'an 710071 China Key Laboratory of Microelectronics Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China

A novel and accurate method is proposed to extract the intrinsic elements of the GaN high-electron-mobility transistor（HEMT） *** new extraction method is verified by comparing the simulated S-parameters with the measured data over the 5-40 GHz frequency *** percentage errors E（ij） within 3.83% show the great agreement between the simulated S-parameters and the measured data.

关键词： switch intrinsic transistor verified drain embedding breakdown extrinsic modeled symmetric

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In-Situ Nitrogen Doping of the TiO2 Photocatalyst Deposited by PEALD for Visible Light Activity

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Plasma Science and technology 2014年第3期16卷 239-243页

作者：饶志鹏万军李超波陈波刘键黄成强夏洋 Key Laboratory of Microelectronics Devices & Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences Jiaxing Research and Commercialization Center for Microelectronics Equipment Jiaxing Kemin Electronic Equipment & Technologies CO. LTD

In this paper, an N-doped titanium oxide （TiO2） photocatalyst is deposited by a plasma-enhanced atomic layer deposition （PEALD） system through the in-situ doping method. X-ray photoelectron spectroscopy （XPS） analysis indicates that substitutional nitrogen atoms （-395.9 eV） with 1 atom% are effectively doped into TiO2 films. UV-VIS spectrometry shows that the in-situ nitrogen doping method indeed enhances the visible-activity of TiO2 films in the 425-550 nm range, and the results of the performance tests of the N-doped TiO2 films also imply that the photocatalysis activity is improved by in-situ doping. The in-situ doping mechanism of the N-doped TiO2 film is suggested according to the XPS results and the typical atomic layer deposition process.

关键词： plasma-enhanced atomic layer deposition in-situ nitrogen plasma N-dopedTiO2 photocatalyst

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Observation of higher-order deterministic optical vortices from random vortex beams

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APL Photonics 2025年第4期10卷

作者： Liu, Yonglei Xu, Siyu Peng, Peipei Zhang, Yongtao Dai, Siting Chen, Yahong Cai, Yangjian Wang, Fei School of Physical Science and Technology Collaborative Innovation Center of Suzhou Nano Science and Technology Soochow University Suzhou215006 China School of Intelligent Manufacturing and Smart Transportation Suzhou City University Suzhou215104 China Key Laboratory of Light Field Manipulation and System Integration Applications in Fujian Province School of Physics and Information Engineering Minnan Normal University Zhangzhou363000 China Shandong Provincial Engineering and Technical Center of Light Manipulation Shandong Provincial Key Laboratory of Optics and Photonic Devices School of Physics and Electronics Shandong Normal University Jinan250014 China Joint Research Center of Light Manipulation Science and Photonic Integrated Chip of East China Normal University Shandong Normal University East China Normal University Shanghai200241 China Suzhou Key Laboratory of Intelligent Photoelectric Perception Soochow University Suzhou215006 China

Optical vortices in coherent beams have been identified as spiral phases with intensity nulls at singularities, while in random beams, they appear as coherence vortices in correlation functions, often not matching intensity nulls. Observing deterministic optical vortices in random beams is challenging due to their randomness. In this work, we propose a scheme relying on spatial coherence engineering and fractional Fourier transform to design a partially coherent light source capable of generating deterministic optical vortices at specific propagation distances in free space. At other propagation distances (including the source plane), the beam may exhibit coherence vortices characterized by spatially coupled two-point correlations, while deterministic vortices emerge only at designated distances. We show that both the topological charge and the axial position of the deterministic vortex are determined by the coherence parameters of the light source. Using a random-mode superposition approach, we experimentally synthesize such partially coherent light sources and characterize both coherence vortices and deterministic phase vortex through measurements of the four-dimensional correlation function at different propagation distances. In addition, we study the coherence phase orbital angular momentum (OAM) spectrum of the random beam both theoretically and experimentally. Our results reveal that the phase OAM spectrum is pure when the random beam carries a deterministic vortex, whereas for coherence vortices, the phase OAM spectrum is non-pure. This study provides a pathway for understanding and controlling the transition between deterministic phase vortices and coherence vortices, with potential applications in optical communication and metrology. © 2025 Author(s).

关键词： Optical design

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Growth mechanism of atomic-layer-deposited TiAlC metal gate based on TiCl4 and TMA precursors

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Chinese Physics B 2016年第3期25卷 371-374页

作者：项金娟丁玉强杜立永李俊峰王文武赵超 Key Laboratory of Microelectronics Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China Chemical and Material Engineering Jiangnan University Wuxi 214122 China

TiAIC metal gate for the metal-oxide-semiconductor field-effect-transistor （MOSFET） is grown by the atorr/ic layer deposition method using TiCI4 and AI（CH3） 3 （TMA） as precursors. It is found that the major PrOduct of the TIC14 and TMA reaction is TiA1C, and the components of C and A1 are found to increase with higher growth temperature. The reaction mechanism is investigated by using x-ray photoemission spectroscopy （XPS）, Fourier transform infrared spectroscopy （FFIR）, and scanning electron microscope （SEM）. The reaction mechanism is as follows. Ti is generated through the reduction of TiCI4 by TMA. The reductive behavior of TMA involves the formation of ethane. The Ti from the reduction of TIC14 by TMA reacts with ethane easily forming heterogenetic TiCH2, TiCH=CH2 and TiC fragments. In addition, TMA thermally decomposes, driving A1 into the TiC film and leading to TiA1C formation. With the growth temperature increasing, TMA decomposes more severely, resulting in more C and A1 in the TiA1C film. Thus, the film composition can be controlled by the growth temperature to a certain extent.

关键词： atomic layer deposition metal gate TiAIC reaction mechanism

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A substrate-free optical readout focal plane array with a heat sink structure

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Journal of Semiconductors 2013年第2期34卷 46-51页

作者：刘瑞文孔延梅焦斌斌李志刚尚海平卢狄克高超群陈大鹏张青川 Integrated Circuit Advanced Process Center Key Laboratory of Microelectronics Device and Integration TechnologyInstitute of MicroelectronicsChinese Academy of Sciences Kunshan MicroOptica Electronic Co.Ltd University of Science and Technology of China

A substrate-ffee optical readout focal plane array （FPA） operating in 8-12 um with a heat sink structure （HSS） was fabricated and its performance was tested. The temperature distribution of the FPA with an HSS investigated by using a commercial FLIR IR camera shows excellent uniformity. The thermal cross-talk effect existing in traditional substrate-free FPAs was eliminated effectively. The heat sink is fabricated successfully by electroplating copper, which provides high thermal capacity and high thermal conductivity, on the frame of substrate-free FPA. The FPA was tested in the optical-readout system, the results show that the response and NETD are 13.6 grey/K （F / # = 0.8） and 588 inK, respectively.

关键词： infrared focal plane array substrate-free optical readout heat sink structure

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Electrohydrodynamically-Printed Serpentine Fiber Scaffolds with Enhanced Conductivity and Elasticity for Post-Myocardial Infarction Repair

SSRN

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SSRN 2025年

作者： Fu, Liyan Han, Kang Qi, Jie Lei, Qi Wang, Xiaomin Wu, Jinmin Yang, Na Li, Ying Kang, Yuming Yu, Xiaojing Zhang, Liuyang Mao, Mao He, Jiankang Department of Physiology and Pathophysiology School of Basic Medical Sciences Xi'an Jiaotong University Health Science Center Institute of Cardiovascular Sciences Translational Medicine Institute Key Laboratory of Environment and Genes Related to Diseases Xi'an Jiaotong University Ministry of Education Shaanxi Xi’an710061 China State Key Laboratory for Manufacturing Systems Engineering Xi'an Jiaotong University Shaanxi Xi’an710049 China National Medical Products Administration Key Laboratory for Research and Evaluation of Additive Manufacturing Medical Devices State Industry-Education Integration Center for Medical Innovations Xi'an Jiaotong University Shaanxi Xi’an710049 China State Industry-Education Integration Center for Medical Innovations Xi'an Jiaotong University Shaanxi Xi’an710049 China Department of Biomedical Engineering Research Center for Nano-biomaterials & Regenerative Medicine College of Biomedical Engineering Taiyuan University of Technology Shanxi Taiyuan030024 China

Myocardial infarction remains a leading threat to cardiovascular health, with electrical conduction abnormalities in the infarcted myocardium significantly exacerbating cardiac dysfunction. Enhancing the conductive microenvironment in the infarcted region is essential for promoting myocardial repair. In this study, we developed gold-coated serpentine microfiber-based cardiac scaffolds using electrohydrodynamic printing, which mimicked the intricate architecture of the myocardial tissue's fibrous membrane and allowed for up to 20% elastic deformation, similar to the maximum strain of the natural heart. Compared to uncoated serpentine scaffolds and traditional linear cardiac scaffolds, the gold-coated serpentine cardiac scaffolds demonstrated enhanced expression of myocardial-specific proteins, including connexin-43 and α-actinin, increased myocardial cell contraction frequency, and better mechanical compatibility with natural cardiac deformation. In a rat model of myocardial infarction, implantation of gold-coated serpentine cardiac scaffolds over four weeks provided significant mechanical support to the infarcted region, reduced myocardial hypertrophy, and markedly improved left ventricular remodeling and cardiac function. Collectively, our findings highlight the potential of serpentine conductive fiber scaffolds as a promising therapeutic strategy for post-myocardial infarction repair, offering innovative insights into the treatment of heart diseases. © 2025, The Authors. All rights reserved.

关键词： Gold coatings

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A DC-DC converter utilizing \beta-\text{Ga}_{2}O}_{3 Schottky barrier diode 5

A DC-DC converter utilizing \beta-\text{Ga}_{2}O}_{3 Schottk...

引用

5th IEEE Electron devices technology and Manufacturing Conference, EDTM 2021

作者： Guo, Wei Jian, Guangzhong Wu, Feihong Zhou, Kai Xu, Guangwei Zhou, Xuanze He, Qiming Zhao, Xiaolong Long, Shibing School of Microelectronics University of Science and Technology of China Hefei230026 China Key Laboratory of Microelectronics Devices and Integration Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing100029 China

ISBN: (纸本)9781728181769

The \beta-\text{Ga}_{2}O}_{3 Schottky barrier diode (SBD) is fabricated and actualized a breakdown voltage of 472 V. A SPICE model for \beta-\text{Ga}_{2}O}_{3 Sbd is derived from experimental results and applied to DC-DC converter circuit simulation. Then the \beta-\text{Ga}_{2}O}_{3 SBD is implemented in a DC-DC converter circuit and acquired the conversion efficiency of 94.8%, indicating the great potential of Ga2O3-based devices and circuits. © 2021 IEEE.

关键词： Schottky barrier diodes

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