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检索条件"机构=Key Laboratory of Microelectronics Devices and Integration Technology"
1308 条 记 录,以下是181-190 订阅
排序:
GaN chips for monitoring density and temperature of lead-acid batteries
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Chip 2025年
作者: Zhiyong Ye Ganyuan Deng Dongmiao Liu Jingyan Wang Xiaodi Gao Kwai Hei Li Ling Zhu College of Physics and Optoelectronic Engineering Shenzhen University Shenzhen 518060 China School of Microelectronics Southern University of Science and Technology Shenzhen 518055 China Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province Shenzhen University Shenzhen 518060 China State Key Laboratory of Radio Frequency Heterogeneous Integration Shenzhen University Shenzhen 518060 China
Lead-acid batteries are indispensable in various applications, and monitoring their status is crucial. However, the existing sensing units for lead-acid batteries are limited by their bulky size, slow response time, a... 详细信息
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Proton Irradiation Effects and Annealing Behaviors of 16Mb Magneto-resistive Random Access Memory(MRAM)  13
Proton Irradiation Effects and Annealing Behaviors of 16Mb M...
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2016 13th IEEE International Conference on Solid-State and Integrated Circuit technology (ICSICT)
作者: Haohao Zhang Jinshun Bi Yuan Duan Yannan Xu Ming Liu the Key Laboratory of Microelectronics Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing Jiaotong University
This paper presents the 3 Me V proton irradiation results of a 16 Mb commercial MRAM. The total ionizing dose(TID) effects induced by proton irradiaton and the following room temperature annealing behaviors are anal... 详细信息
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Thermal effect on endurance performance of 3-dimensional RRAM crossbar array
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Chinese Physics B 2016年 第5期25卷 253-257页
作者: 卢年端 孙鹏霄 李泠 刘琦 龙世兵 吕杭炳 刘明 Key Laboratory of Microelectronics Devices&Integrated Technology Institute of Microelectronics of Chinese Academy of SciencesBeijing 100029China Jiangsu National Synergetic Innovation Center for Advanced Materials Nanjing 210000China
Three-dimensional(3D) crossbar array architecture is one of the leading candidates for future ultra-high density nonvolatile memory applications. To realize the technological potential, understanding the reliability... 详细信息
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Radio-frequency transistors from millimeter-scale graphene domains
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Chinese Physics B 2014年 第11期23卷 470-475页
作者: 魏子钧 傅云义 刘竞博 王紫东 贾越辉 郭剑 任黎明 陈远富 张酣 黄如 张兴 Institute of Microelectronics Peking University State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China School of Physics Peking University
Graphene is a new promising candidate for application in radio-frequency (RF) electronics due to its excellent elec- tronic properties such as ultrahigh carrier mobility, large threshold current density, and high sa... 详细信息
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Evolution of optical properties and molecular structure of PCBM films under proton irradiation
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Chinese Physics B 2022年 第5期31卷 582-587页
作者: Guo-Dong Xiong Hui-Ping Zhu Lei Wang Bo Li Fa-Zhan Zhao Zheng-Sheng Han Key Laboratory of Science and Technology on Silicon Devices Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China University of the Chinese Academy of Sciences Beijing 100049China
Low-energy proton irradiation effects on the optical properties and the molecular structure of phenyl-C_(61)-butyric acid methyl ester(PCBM)are studied in this *** PCBM films are irradiated by 100-keV proton beams wit... 详细信息
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Fabrication of 11-nm-Wide Silica-Like Lines Using X-Ray Diffraction Exposure
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中国物理快报(英文版) 2009年 第8期26卷 271-273页
作者: ZHU Xiao-Li XIE Chang-Qing ZHANG Man-Hong LIU Ming CHEN Bao-Qin PAN Feng Laboratory of Advanced Materials Department of Materials Science and EngineeringTsinghua UniversityBeijing 100084 Key Laboratory of Nano-fabrication and Novel Devices Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijin Key Laboratory of Nano-fabrication and Novel Devices Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029 Laboratory of Advanced Materials Department of Materials Science and EngineeringTsinghua UniversityBeijing 100084
Fine silica-like lines with 11 nm width are successfully fabricated using x-ray Fresnel diffraction exposure. X-rays pass a mask of 175-nm-wide lines and 125-nm-wide spaces and form sharp peaks on a wafer coated with ... 详细信息
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Electronic transport properties of an (8,0) carbon/silicon-carbide nanotube heterojunction
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Journal of Semiconductors 2009年 第5期30卷 5-8页
作者: 刘红霞 张鹤鸣 张志勇 Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices School of MicroelectronicsXidian University Institute of Information Science and Technology Northwest University
A two-probe system of the heterojunction formed by an (8, 0) carbon nanotube (CNT) and an (8, 0) silicon carbide nanotube (SiCNT) was established based on its optimized structure. By using a method combining n... 详细信息
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Design and research of normally-offβ-Ga_(2)O_(3)/4H-SiC heterojunction field effect transistor
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Chinese Physics B 2023年 第3期32卷 461-466页
作者: 程梅霞 栾苏珍 王海林 贾仁需 The Key Laboratory of Heterogeneous Network Convergence Communication Xi'an University of Science and TechnologyXi'an 710600China The Key Laboratory of Wide Band Gap Semiconductor Materials and Devices School of MicroelectronicsXidian UniversityXi'an 710071China
Ga_(2)O_(3)is difficult to achieve p-type doping,which further hinders the development of Ga_(2)O_(3)-based power devices and is not conducive to the development of new devices with high power density and low power **... 详细信息
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Electronic transport properties of an(8,0) carbon/boron nitride nanotube heterojunction
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Chinese Physics B 2010年 第3期19卷 445-449页
作者: 刘红霞 张鹤鸣 宋久旭 张志勇 Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices School of Microelectronics Xidian University Information Science and Technology Institution Northwest University
The structure of a heterojunction made up of an (8, 0) carbon nanotube and an (8, 0) boron nitride nanotube is achieved through geometry optimization implemented in the CASTEP package. Based on the optimized geome... 详细信息
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A 6-bit 3-Gsps ADC implemented in 1μ m GaAs HBT technology
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Journal of Semiconductors 2014年 第8期35卷 145-150页
作者: 张金灿 张玉明 吕红亮 张义门 肖广兴 叶桂平 School of Microelectronics Xidian University Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices Electrical Engineering College Henan University of Science and Technology
The design and test results of a 6-bit 3-Gsps analog-to-digital converter (ADC) using 1 μm GaAs het- erojunction bipolar transistor (HBT) technology are presented. The monolithic folding-interpolating ADC makes u... 详细信息
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