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Designing double isolated bands and subgap states in two-dimensional XPS3 (X = Al,Ga,In,Tl) for achieving bi-anti-ambipolar transport

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Physical Review Applied 2024年第6期21卷 064009-064009页

作者： Jialin Yang Chuyao Chen Xuemin Hu Tingting Guo Hengze Qu Zhenhua Wu Li Tao Shengli Zhang MIIT Key Laboratory of Advanced Display Materials and Devices College of Material Science and Engineering School of Material Engineering Key Laboratory of Microelectronics Device and Integrated Technology School of Materials Science and Engineering Jiangsu Key Laboratory of Advanced Metallic Materials Center for 2D Materials and Center for Flexible RF Technology

Anti-ambipolar transistors (AATs) are a promising candidate for multivalued logic devices, which are vital for improving the device density and data-handling capabilities of nanoelectronics. Compared with most AATs with Λ-shaped transport characteristics, the emerging four-logic-state bi-AATs have a stronger capability for exponentially increasing the integration density. Here, we demonstrate an alternative strategy to achieve bi-anti-ambipolar transport by using the intrinsic electronic properties of two-dimensional (2D) materials. In detail, by breaking symmetry in edge-sharing octahedra, 2D XPS3 (X = Al,Ga,In,Tl) materials exhibit isolated band structures with subgap states near the Fermi level. More importantly, this special electronic feature inspires the design of double subgap tunnel field-effect transistors (TFETs) for realizing bi-anti-ambipolar transport. Through quantum transport simulations, we observe M-shaped I-V curves in the 2D InPS3 TFET, verifying the feasibility of the device concept. This work broadens the horizon for the development of bi-anti-ambipolar devices in the forthcoming era of big data.

关键词： Electronic structure Quantum transport 2-dimensional systems Field-effect transistors Semiconductor compounds Density functional calculations Nonequilibrium Green's function

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Polarization-encoded neural networks with simplified grating patch

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Science China(Technological Sciences) 2025年第2期68卷 269-277页

作者： Chengyan ZHONG Xiang WANG Lingfei LI Yuanchi CUI Lei XIAO Dawei SONG Junxiong GUO Wen HUANG Yufeng GUO Yu LIU College of Integrated Circuit Science and Engineering Nanjing University of Posts and TelecommunicationsNanjing 210023China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing 210023China College of Integrated Circuits Hangzhou Global Scientific and Technological Innovation Centre Zhejiang UniversityHangzhou 310027China Nanjing Mumusili Technology Co. LTDNanjing 211100China School of Integrated Circuits Tsinghua UniversityBeijing 100084China Institute of Advanced Study School of Electronic Information and Electrical EngineeringChengdu UniversityChengdu 610106China State Key Laboratory of Electronic Thin Films and Integrated Devices School of Integrated Circuit Science and EngineeringUniversity of Electronic Science and Technology of ChinaChengdu 610054China

Optical neural networks(ONNs)offer a promising solution for high-performance,energy-efficient artificial intelligence hardware by leveraging the parallelism and speed of ***,the large-scale implementation of ONNs remains challenging due to the bulky footprint and complex control of optical *** this work,we propose and simulate a plasmonic polarized synaptic architecture that overcomes the diffraction limit and enables ultra-compact *** tuning the polarization state of incident light,the optical transmittance through each plasmonic unit can be dynamically adjusted to represent a synaptic *** plasmonic structures,with features as small as 40 nm,operate well below this limit in the visible spectrum(400-750 nm).Compared with diffraction and interference-based circuit designs,our proposed method achieves a substantial reduction in synaptic density by factors of 150000-fold and 1500-fold,***,we successfully demonstrate a proof-of-concept plasmonic ONN applied to the Canadian Institute for Advanced Research—10 classes(CIFAR-10)dataset using a Visual Geometry Group network with 16 layers(VGG16)*** training for 80 epochs,the network achieves an accuracy of 93%.The polarization-tunable plasmonics paves the way towards scalable ONNs for next-generation artificial intelligence(AI)accelerators and smart sensors.

关键词： optical neural networks polarization dependent nanophotonic ultra-compact devices diffraction limit

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A novel superhard boron nitride polymorph with monoclinic symmetry

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Communications in Theoretical Physics 2022年第6期74卷 159-167页

作者： Qing-Yang Fan Chen-Si Li Ying-Bo Zhao Yan-Xing Song Si-Ning Yun College of Information and Control Engineering Xi'an University of Architecture and TechnologyXi'an 710055China Shaanxi Key Laboratory of Nano Materials and Technology Xi'an 710055China School of Mechanical and Electrical Engineering Xi'an University of Architecture and TechnologyXi'an 710055China Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices School of MicroelectronicsXidian UniversityXi'an 710071China Functional Materials Laboratory(FML) School of Materials Science and EngineeringXi'an University of Architecture and TechnologyXi'an 710055China

In this work,a new superhard material named Pm BN is *** structural properties,stability,mechanical properties,mechanical anisotropy properties,and electronic properties of Pm BN are studied in this *** BN is dynamically and mechanically stable,the relative enthalpy of Pm BN is greater than that of c-BN,and in this respect,and it is more favorable than that of T-B_(3)N_(3),T-B_(7)N_(7),tP24 BN,Imm2 BN,Ni As BN,and rocksalt *** Young's modulus,bulk modulus,and shear modulus of Pm BN are 327 GPa,331 GPa,and 738 GPa,respectively,and according to Chen's model,Pm BN is a novel superhard *** with its original structure,the mechanical anisotropy of Young's modulus of Pm BN is larger than that of C14 ***,the calculations of the electronic energy band structure show that Pm BN is a semiconductor material with not only a wide band gap but also an indirect band gap.

关键词： boron nitride polymorph superhard material wider band gap semiconductor firstprinciples calculations

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High-power mid-infrared femtosecond master oscillator power amplifier Er:ZBLAN fiber laser system

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High Power Laser Science and Engineering 2023年第4期11卷 85-90页

作者： Linpeng Yu Jinhui Liang Qinghui Zeng Jiacheng Wang Xing Luo Jinzhang Wang Peiguang Yan Fanlong Dong Xing Liu Qitao Lü Chunyu Guo Shuangchen Ruan Shenzhen Key Laboratory of Laser Engineering Guangdong Provincial Key Laboratory of Micro/Nano Optomechatronics EngineeringKey Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong ProvinceState Key Laboratory of Radio Frequency Heterogeneous IntegrationCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhenChina Key Laboratory of Advanced Optical Precision Manufacturing Technology of Guangdong Higher Education Institutes Shenzhen Technology UniversityShenzhenChina Han’s Laser Technology Industry Group Co. Ltd.ShenzhenChina

High-power femtosecond mid-infrared(MIR)lasers are of vast importance to both fundamental research and *** report a high-power femtosecond master oscillator power amplifier laser system consisting of a singlemode Er:ZBLAN fiber mode-locked oscillator and pre-amplifier followed by a large-mode-area Er:ZBLAN fiber main *** main amplifier is actively cooled and bidirectionally pumped at 976 nm,generating a slope efficiency of 26.9%.Pulses of 8.12 W,148 fs at 2.8μm with a repetition rate of 69.65 MHz are *** the best of our knowledge,this is the highest average power ever achieved from a femtosecond MIR laser *** a compact ultrafast laser system is promising for a wide range of applications,such as medical surgery and material processing.

关键词： femtosecond fiber laser fluoride fiber amplifier master oscillator power amplifier mid-infrared

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Structural plasticity-based hydrogel optical Willshaw model for one-shot on-the-fly edge learning

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InfoMat 2023年第4期5卷 48-59页

作者： Dingchen Wang Dingyao Liu Yinan Lin Anran Yuan Woyu Zhang Yaping Zhao Shaocong Wang Xi Chen Hegan Chen Yi Zhang Yang Jiang Shuhui Shi Kam Chi Loong Jia Chen Songrui Wei Qing Wang Hongyu Yu Renjing Xu Dashan Shang Han Zhang Shiming Zhang Zhongrui Wang Department of Electrical and Electronic Engineering The University of Hong KongHong Kongthe People's Republic of China ACCESS-AI Chip Center for Emerging Smart Systems InnoHK CentersHong Kong Science ParkHong Kongthe People's Republic of China School of Computer Science and Engineering Faculty of Innovation EngineeringMacao University of Science and TechnologyMacaothe People's Republic of China Key Laboratory of Microelectronics Devices and Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijingthe People's Republic of China Collaborative Innovation Center for Optoelectronic Science Technology International Collaborative Laboratory of 2D Materials for OptoelectronicsScience and Technology of Ministry of EducationInstitute of Microscale OptoelectronicsShenzhen UniversityShenzhenthe People's Republic of China School of Microelectronics Southern University of Science and TechnologyShenzhenthe People's Republic of China Microelectronics Thrust Function Hub of the Hong Kong University of Science and Technology(Guangzhou)Guagndongthe People's Republic of China

Autonomous one-shot on-the-fly learning copes with the high privacy,small dataset,and in-stream data at the *** such learning on digital hardware suffers from the well-known von-Neumann and scaling *** optical neural networks featuring large parallelism,low latency,and high efficiency offer a promising ***,ex-situ training of conventional optical networks,where optical path configuration and deep learning model optimization are separated,incurs hardware,energy and time overheads,and defeats the advantages in edge ***,we introduced a bio-inspired material-algorithm co-design to construct a hydrogel-based optical Willshaw model(HOWM),manifesting Hebbian-rule-based structural plasticity for simultaneous optical path configuration and deep learning model optimization thanks to the underlying opto-chemical *** first employed the HOWM as an all optical in-sensor AI processor for one-shot pattern classification,association and *** then leveraged HOWM to function as a ternary content addressable memory(TCAM)of an optical memory augmented neural network(MANN)for one-shot learning the Omniglot *** HOWM empowered one-shot on-the-fly edge learning leads to 1000boost of energy efficiency and 10boost of speed,which paves the way for the next-generation autonomous,efficient,and affordable smart edge systems.

关键词： associative memory hydrogel one-shot learning optical neural network structural plasticity Willshaw model

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A Novel Double-Zener Process and Multiplex Design for High-Power Surge and High-Speed ESD devices Development 17

A Novel Double-Zener Process and Multiplex Design for High-P...

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17th IEEE International Conference on Solid-State and Integrated Circuit technology, ICSICT 2024

作者： Qi, Zhao Jia, YiRui Chen, Hongquan Qiao, Ming Li, Zhaoji Zhang, Bo Chongqing Institute of Microelectronics Industry Technology UESTC Chongqing China State Key Laboratory of Electronic Thin Films and Integrated Devices Chengdu China Shenzhen Institute for Advanced Study UESTC Shenzhen China Institute of Electronic and Information Engineering of UESTC in Guangdong Dongguan China

ISBN: (纸本)9798350361834

In this work, a novel Double-zener process (DZP) for Transient Voltage Suppressor (TVS) was developed in 0.5 μm Bipolar CMOS DMOS (BCD) process for the design of Electrical Overstress (EOS) and Electrostatic Discharge (ESD) protection devices. The DZP is designed by adding two P-zener implantation (EP1 and EP2) with different energy. Moreover, multiplex units are designed for various applications, including a dual-directional (DD) low-capacitance silicon-controlled rectifier (DD-LCSCR), a dual-directional NPN (DD-NPN) clamp, and a high-power lightning protection array (LPA). The DD-LCSCR fabricated by EP2 step achieves a capacitance (C) of 0.5 pF and a surge peak current (I PP) of 7 A. The DD-NPN clamp using an EP1 step to decrease the breakdown voltage (BV), achieving a holding voltage (V h ) of 5.5 V, a clamping voltage (V_CL) of 14 V@50 A, and an ESD level of ±30 kV. Using the EP1 step and stacking technology, the 6-stacked LPA shows the excellent power density and VCL which is competitive with vertical TVS products. © 2024 IEEE.

关键词： Electrostatic devices

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High responsivity and fast response 8×8β-Ga_(2)O_(3)solar-blind ultraviolet imaging photodetector array

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Science China(Technological Sciences) 2023年第11期66卷 3259-3266页

作者： SHEN GaoHui LIU Zeng TANG Kai SHA ShuLin LI Lei TAN Chee-Keong GUO YuFeng TANG WeiHua Innovation Center of Gallium Oxide Semiconductor(IC-GAO) College of Integrated Circuit Science and EngineeringNanjing University of Posts and TelecommunicationsNanjing 210023China National and Local Joint Engineering Laboratory for RF Integration and Micro-Assembly Technologies Nanjing University of Posts and TelecommunicationsNanjing 210023China Key Laboratory of Aerospace Information Materials and Physics(NUAA) MIITNanjing 211106China College of Physics MIIT Key Laboratory of Aerospace Information Materials and PhysicsKey Laboratory for Intelligent Nano Materials and DevicesNanjing University of Aeronautics and AstronauticsNanjing 211106China Advanced Materials Thrust Function HubThe Hong Kong University of Science and Technology(Guangzhou)Nansha 511458China Department of Electronic and Computer Engineering School of EngineeringThe Hong Kong University of Science and TechnologyHong Kong 999077China

In this work,an 8×8 Ga_(2)O_(3)solar-blind ultraviolet photodetector array is introduced for image sensing *** 2-in wafer-scaled Ga_(2)O_(3)thin film was grown by metalorganic chemical vapor deposition technique;and the photodetector array was fabricated through ultraviolet photolithography,lift-off,and electron-beam *** addition to the high solar-blind/visible rejection ratio of 104,every photodetector cell in the array has high performance and fast response speed,such as responsivity of 49.4 A W^(-1),specific detectivity of 6.8×10^(14)Jones,external quantum efficiency of 1.9×10^(4)%,linear dynamic range of 117.8 d B,and response time of 41 ms,respectively,indicating the high photo-response performance of the ***,the photodetector array displayed uniform responsivity with a standard deviation of~6%,and presented a sensing image of low chromatic aberration,owing to the high resolution of the photodetector *** a word,this work may contribute to developing Ga_(2)O_(3)-based optoelectronic device applications.

关键词： Ga_(2)O_(3) photodetector array imaging photo-response

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Investigation on Wafer Heterogeneous Bonding Process and Performance of CMOS Integrated Circuit on Silicon Carbide Substrate

Investigation on Wafer Heterogeneous Bonding Process and Per...

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International Conference on (ICEPT) Electronic Packaging technology

作者： Fenghua Lei Weier Lu Fanyu Liu Bo Li Jiajia Wang Jiangjiang Li Key Laboratory of Science and Technology on Silicon Devices Institute of Microelectronics of the Chinese Academy of Sciences University of Chinese Academy of Sciences Chinese Academy of Sciences Beijing China Key Laboratory of Science and Technology on Silicon Devices Institute of Microelectronics of the Chinese Academy of Sciences Chinese Academy of Sciences Beijing China

ISBN: (数字)9798350353808

ISBN: (纸本)9798350353815

CMOS integrated circuits (ICs) were heterogeneous bonded to semi-insulating 4H-SiC wafer by using SOI or Si wafers that have completed 0.18 μm CMOS processing technology. Prebonding and debonding processes were used to remove the Si handle layer and SiO2 layer for SOI IC wafer, to thin the Si substrate for Si IC wafer. Through back grinding, the thickness of the initial SOI and Si CMOS wafer were 7 μm and 20 μm, respectively. Benzocyclobutene (BCB) was uesd as the bonding interface layer for SOI IC wafer due to the extremely thin CMOS thickness of 7 μm, and directly bonding was realized for Si IC with interface layer about 10 nm. The square resistance and off-state leakage current increase with the ambient temperature improving from 25 °C to 175 °C, which is more obvious for SOS devices than SOI devices because of the high thermal resistance of BCB interface layer. For comparison, the electrical properties of directly bonded SOS Operational Amplifier (OPA) are basically consistent with those of Si OPA. The Vos, f −3dB and SR of SOS OPA are -16 μV, 90 kHz, and 0.346 V/μs, respectively. This study provides a practical method to realize SOS CMOS IC, boosting the further exploration, thermal advantage and high-performance development of Si on SiC IC chips.

关键词： Operational amplifiers Temperature Silicon carbide Thermal resistance CMOS technology Silicon CMOS integrated circuits

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Achieving highly-efficient H2S gas sensor by flower-like SnO_(2)–SnO/porous GaN heterojunction

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Chinese Physics B 2023年第2期32卷 193-200页

作者：刘增都灵张少辉边昂方君鹏邢晨阳李山汤谨诚郭宇锋唐为华 College of Integrated Circuit Science and Engineering Nanjing University of Posts and TelecommunicationsNanjing 210023China National and Local Joint Engineering Laboratory for RF Integration and Micro-Packing Technologies Nanjing University of Posts and TelecommunicationsNanjing 210023China School of Electronic and Information Engineering Jinling Institute of TechnologyNanjing 211169China Institute of Microscale Optoelectronics Shenzhen UniversityShenzhen 518060China Key Laboratory of Luminescence and Optical Information of Ministry of Education Institute of Optoelectronic TechnologyBeijing Jiaotong UniversityBeijing 100044China School of Integrated Circuits Tsinghua UniversityBeijing 100044China Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education College of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen 518060China State Key Laboratory of Information Photonics and Optical Communications School of ScienceBeijing University of Posts and TelecommunicationsBeijing 100876China

A flower-like SnO_(2)–SnO/porous Ga N(FSS/PGaN) heterojunction was fabricated for the first time via a facile spraying process, and the whole process also involved hydrothermal preparation of FSS and electrochemical wet etching of GaN,and SnO_(2)–SnO composites with p–n junctions were loaded onto PGaN surface directly applied to H_(2)S sensor. Meanwhile,the excellent transport capability of heterojunction between FSS and PGaN facilitates electron transfer, that is, a response time as short as 65 s and a release time up to 27 s can be achieved merely at 150℃ under 50 ppm H_(2)S concentration, which has laid a reasonable theoretical and experimental foundation for the subsequent PGaN-based heterojunction gas *** lowering working temperature and high sensitivity(23.5 at 200 ppm H2S) are attributed to the structure of PGaN itself and the heterojunction between SnO_(2)–SnO and PGaN. In addition, the as-obtained sensor showed ultra-high test *** simple design strategy of FSS/PGaN-based H_(2)S sensor highlights its potential in various applications.

关键词： gas sensor SnO_(2)–SnO porous GaN heterojunction

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Realization of flexible in-memory computing in a van der Waals ferroelectric heterostructure tri-gate transistor

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Nano Research 2024年第3期17卷 1886-1892页

作者： Xinzhu Gao Quan Chen Qinggang Qin Liang Li Meizhuang Liu Derek Hao Junjie Li Jingbo Li Zhongchang Wang Zuxin Chen School of Semiconductor Science and Technology South China Normal UniversityFoshan 528225China Guangdong Provincial Key Laboratory of Chip and Integration Technology Guangzhou 510631China Institute of Solid State Physics Hefei Institutes of Physical Science Chinese Academy of SciencesHefei 230601China School of Science STEM CollegeRMIT UniversityMelbourne 3000Australia CAS Key Laboratory of Functional Materials and Devices for Special Environments Xinjiang Technical Institute of Physics&ChemistryChinese Academy of SciencesUrumqi 830011China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China College of Optical Science and Engineering Zhejiang UniversityHangzhou 310027China International Iberian Nanotechnology Laboratory(INL) Av.Mestre Jose Veiga s/nBraga 4715-330Portugal

Combining logical function and memory characteristics of transistors is an ideal strategy for enhancing computational efficiency of transistor ***,we rationally design a tri-gate two-dimensional(2D)ferroelectric van der Waals heterostructures device based on copper indium thiophosphate(CuInP_(2)S_(6))and few layers tungsten disulfide(WS_(2)),and demonstrate its multi-functional applications in multi-valued state of data,non-volatile storage,and logic *** co-regulating the input signals across the tri-gate,we show that the device can switch functions flexibly at a low supply voltage of 6 V,giving rise to an ultra-high current switching ratio of 107 and a low subthreshold swing of 53.9 mV/*** findings offer perspectives in designing smart 2D devices with excellent functions based on ferroelectric van der Waals heterostructures.

关键词： two-dimensional(2D)ferroelectric heterostructure tri-gate polymorphic regulation in-memory computing

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