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检索条件"机构=Key Laboratory of Microelectronics Devices and Integration Technology"
1327 条 记 录,以下是181-190 订阅
排序:
Designing double isolated bands and subgap states in two-dimensional XPS3 (X = Al,Ga,In,Tl) for achieving bi-anti-ambipolar transport
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Physical Review Applied 2024年 第6期21卷 064009-064009页
作者: Jialin Yang Chuyao Chen Xuemin Hu Tingting Guo Hengze Qu Zhenhua Wu Li Tao Shengli Zhang MIIT Key Laboratory of Advanced Display Materials and Devices College of Material Science and Engineering School of Material Engineering Key Laboratory of Microelectronics Device and Integrated Technology School of Materials Science and Engineering Jiangsu Key Laboratory of Advanced Metallic Materials Center for 2D Materials and Center for Flexible RF Technology
Anti-ambipolar transistors (AATs) are a promising candidate for multivalued logic devices, which are vital for improving the device density and data-handling capabilities of nanoelectronics. Compared with most AATs wi... 详细信息
来源: 评论
Polarization-encoded neural networks with simplified grating patch
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Science China(Technological Sciences) 2025年 第2期68卷 269-277页
作者: Chengyan ZHONG Xiang WANG Lingfei LI Yuanchi CUI Lei XIAO Dawei SONG Junxiong GUO Wen HUANG Yufeng GUO Yu LIU College of Integrated Circuit Science and Engineering Nanjing University of Posts and TelecommunicationsNanjing 210023China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing 210023China College of Integrated Circuits Hangzhou Global Scientific and Technological Innovation Centre Zhejiang UniversityHangzhou 310027China Nanjing Mumusili Technology Co. LTDNanjing 211100China School of Integrated Circuits Tsinghua UniversityBeijing 100084China Institute of Advanced Study School of Electronic Information and Electrical EngineeringChengdu UniversityChengdu 610106China State Key Laboratory of Electronic Thin Films and Integrated Devices School of Integrated Circuit Science and EngineeringUniversity of Electronic Science and Technology of ChinaChengdu 610054China
Optical neural networks(ONNs)offer a promising solution for high-performance,energy-efficient artificial intelligence hardware by leveraging the parallelism and speed of ***,the large-scale implementation of ONNs rema... 详细信息
来源: 评论
A novel superhard boron nitride polymorph with monoclinic symmetry
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Communications in Theoretical Physics 2022年 第6期74卷 159-167页
作者: Qing-Yang Fan Chen-Si Li Ying-Bo Zhao Yan-Xing Song Si-Ning Yun College of Information and Control Engineering Xi'an University of Architecture and TechnologyXi'an 710055China Shaanxi Key Laboratory of Nano Materials and Technology Xi'an 710055China School of Mechanical and Electrical Engineering Xi'an University of Architecture and TechnologyXi'an 710055China Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices School of MicroelectronicsXidian UniversityXi'an 710071China Functional Materials Laboratory(FML) School of Materials Science and EngineeringXi'an University of Architecture and TechnologyXi'an 710055China
In this work,a new superhard material named Pm BN is *** structural properties,stability,mechanical properties,mechanical anisotropy properties,and electronic properties of Pm BN are studied in this *** BN is dynamica... 详细信息
来源: 评论
High-power mid-infrared femtosecond master oscillator power amplifier Er:ZBLAN fiber laser system
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High Power Laser Science and Engineering 2023年 第4期11卷 85-90页
作者: Linpeng Yu Jinhui Liang Qinghui Zeng Jiacheng Wang Xing Luo Jinzhang Wang Peiguang Yan Fanlong Dong Xing Liu Qitao Lü Chunyu Guo Shuangchen Ruan Shenzhen Key Laboratory of Laser Engineering Guangdong Provincial Key Laboratory of Micro/Nano Optomechatronics EngineeringKey Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong ProvinceState Key Laboratory of Radio Frequency Heterogeneous IntegrationCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhenChina Key Laboratory of Advanced Optical Precision Manufacturing Technology of Guangdong Higher Education Institutes Shenzhen Technology UniversityShenzhenChina Han’s Laser Technology Industry Group Co. Ltd.ShenzhenChina
High-power femtosecond mid-infrared(MIR)lasers are of vast importance to both fundamental research and *** report a high-power femtosecond master oscillator power amplifier laser system consisting of a singlemode Er:Z... 详细信息
来源: 评论
Structural plasticity-based hydrogel optical Willshaw model for one-shot on-the-fly edge learning
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InfoMat 2023年 第4期5卷 48-59页
作者: Dingchen Wang Dingyao Liu Yinan Lin Anran Yuan Woyu Zhang Yaping Zhao Shaocong Wang Xi Chen Hegan Chen Yi Zhang Yang Jiang Shuhui Shi Kam Chi Loong Jia Chen Songrui Wei Qing Wang Hongyu Yu Renjing Xu Dashan Shang Han Zhang Shiming Zhang Zhongrui Wang Department of Electrical and Electronic Engineering The University of Hong KongHong Kongthe People's Republic of China ACCESS-AI Chip Center for Emerging Smart Systems InnoHK CentersHong Kong Science ParkHong Kongthe People's Republic of China School of Computer Science and Engineering Faculty of Innovation EngineeringMacao University of Science and TechnologyMacaothe People's Republic of China Key Laboratory of Microelectronics Devices and Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijingthe People's Republic of China Collaborative Innovation Center for Optoelectronic Science Technology International Collaborative Laboratory of 2D Materials for OptoelectronicsScience and Technology of Ministry of EducationInstitute of Microscale OptoelectronicsShenzhen UniversityShenzhenthe People's Republic of China School of Microelectronics Southern University of Science and TechnologyShenzhenthe People's Republic of China Microelectronics Thrust Function Hub of the Hong Kong University of Science and Technology(Guangzhou)Guagndongthe People's Republic of China
Autonomous one-shot on-the-fly learning copes with the high privacy,small dataset,and in-stream data at the *** such learning on digital hardware suffers from the well-known von-Neumann and scaling *** optical neural ... 详细信息
来源: 评论
A Novel Double-Zener Process and Multiplex Design for High-Power Surge and High-Speed ESD devices Development  17
A Novel Double-Zener Process and Multiplex Design for High-P...
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17th IEEE International Conference on Solid-State and Integrated Circuit technology, ICSICT 2024
作者: Qi, Zhao Jia, YiRui Chen, Hongquan Qiao, Ming Li, Zhaoji Zhang, Bo Chongqing Institute of Microelectronics Industry Technology UESTC Chongqing China State Key Laboratory of Electronic Thin Films and Integrated Devices Chengdu China Shenzhen Institute for Advanced Study UESTC Shenzhen China Institute of Electronic and Information Engineering of UESTC in Guangdong Dongguan China
In this work, a novel Double-zener process (DZP) for Transient Voltage Suppressor (TVS) was developed in 0.5 μm Bipolar CMOS DMOS (BCD) process for the design of Electrical Overstress (EOS) and Electrostatic Discharg... 详细信息
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High responsivity and fast response 8×8β-Ga_(2)O_(3)solar-blind ultraviolet imaging photodetector array
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Science China(Technological Sciences) 2023年 第11期66卷 3259-3266页
作者: SHEN GaoHui LIU Zeng TANG Kai SHA ShuLin LI Lei TAN Chee-Keong GUO YuFeng TANG WeiHua Innovation Center of Gallium Oxide Semiconductor(IC-GAO) College of Integrated Circuit Science and EngineeringNanjing University of Posts and TelecommunicationsNanjing 210023China National and Local Joint Engineering Laboratory for RF Integration and Micro-Assembly Technologies Nanjing University of Posts and TelecommunicationsNanjing 210023China Key Laboratory of Aerospace Information Materials and Physics(NUAA) MIITNanjing 211106China College of Physics MIIT Key Laboratory of Aerospace Information Materials and PhysicsKey Laboratory for Intelligent Nano Materials and DevicesNanjing University of Aeronautics and AstronauticsNanjing 211106China Advanced Materials Thrust Function HubThe Hong Kong University of Science and Technology(Guangzhou)Nansha 511458China Department of Electronic and Computer Engineering School of EngineeringThe Hong Kong University of Science and TechnologyHong Kong 999077China
In this work,an 8×8 Ga_(2)O_(3)solar-blind ultraviolet photodetector array is introduced for image sensing *** 2-in wafer-scaled Ga_(2)O_(3)thin film was grown by metalorganic chemical vapor deposition technique;... 详细信息
来源: 评论
Investigation on Wafer Heterogeneous Bonding Process and Performance of CMOS Integrated Circuit on Silicon Carbide Substrate
Investigation on Wafer Heterogeneous Bonding Process and Per...
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International Conference on (ICEPT) Electronic Packaging technology
作者: Fenghua Lei Weier Lu Fanyu Liu Bo Li Jiajia Wang Jiangjiang Li Key Laboratory of Science and Technology on Silicon Devices Institute of Microelectronics of the Chinese Academy of Sciences University of Chinese Academy of Sciences Chinese Academy of Sciences Beijing China Key Laboratory of Science and Technology on Silicon Devices Institute of Microelectronics of the Chinese Academy of Sciences Chinese Academy of Sciences Beijing China
CMOS integrated circuits (ICs) were heterogeneous bonded to semi-insulating 4H-SiC wafer by using SOI or Si wafers that have completed 0.18 μm CMOS processing technology. Prebonding and debonding processes were used ... 详细信息
来源: 评论
Achieving highly-efficient H2S gas sensor by flower-like SnO_(2)–SnO/porous GaN heterojunction
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Chinese Physics B 2023年 第2期32卷 193-200页
作者: 刘增 都灵 张少辉 边昂 方君鹏 邢晨阳 李山 汤谨诚 郭宇锋 唐为华 College of Integrated Circuit Science and Engineering Nanjing University of Posts and TelecommunicationsNanjing 210023China National and Local Joint Engineering Laboratory for RF Integration and Micro-Packing Technologies Nanjing University of Posts and TelecommunicationsNanjing 210023China School of Electronic and Information Engineering Jinling Institute of TechnologyNanjing 211169China Institute of Microscale Optoelectronics Shenzhen UniversityShenzhen 518060China Key Laboratory of Luminescence and Optical Information of Ministry of Education Institute of Optoelectronic TechnologyBeijing Jiaotong UniversityBeijing 100044China School of Integrated Circuits Tsinghua UniversityBeijing 100044China Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education College of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen 518060China State Key Laboratory of Information Photonics and Optical Communications School of ScienceBeijing University of Posts and TelecommunicationsBeijing 100876China
A flower-like SnO_(2)–SnO/porous Ga N(FSS/PGaN) heterojunction was fabricated for the first time via a facile spraying process, and the whole process also involved hydrothermal preparation of FSS and electrochemical ... 详细信息
来源: 评论
Realization of flexible in-memory computing in a van der Waals ferroelectric heterostructure tri-gate transistor
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Nano Research 2024年 第3期17卷 1886-1892页
作者: Xinzhu Gao Quan Chen Qinggang Qin Liang Li Meizhuang Liu Derek Hao Junjie Li Jingbo Li Zhongchang Wang Zuxin Chen School of Semiconductor Science and Technology South China Normal UniversityFoshan 528225China Guangdong Provincial Key Laboratory of Chip and Integration Technology Guangzhou 510631China Institute of Solid State Physics Hefei Institutes of Physical Science Chinese Academy of SciencesHefei 230601China School of Science STEM CollegeRMIT UniversityMelbourne 3000Australia CAS Key Laboratory of Functional Materials and Devices for Special Environments Xinjiang Technical Institute of Physics&ChemistryChinese Academy of SciencesUrumqi 830011China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China College of Optical Science and Engineering Zhejiang UniversityHangzhou 310027China International Iberian Nanotechnology Laboratory(INL) Av.Mestre Jose Veiga s/nBraga 4715-330Portugal
Combining logical function and memory characteristics of transistors is an ideal strategy for enhancing computational efficiency of transistor ***,we rationally design a tri-gate two-dimensional(2D)ferroelectric van d... 详细信息
来源: 评论