检索结果-内蒙古大学图书馆

Flat-passband silicon nitride cascaded Mach–Zehnder interferometer for coarse wavelength division multiplexing

Journal of Nanophotonics 2025年第1期19卷

作者： Zhang, Zanyun Du, Xiaowei Jiang, Hao Li, Meixin Zhang, Kaixin Wang, Qixin Liu, Tianjun Lv, Xiaoqing Huang, Beiju Tiangong University School of Electronic and Information Engineering Tianjin Key Laboratory of Optoelectronic Detection Technology and Systems Tianjin China Chinese Academy of Sciences Institute of Semiconductors Key Laboratory of Optoelectronic Materials and Devices Beijing China Suzhou Institute of Microelectronics and Optoelectronics Integration Suzhou China University of Chinese Academy of Sciences College of Materials Science and Opto-Electronic Technology Beijing China

We design and experimentally demonstrate a four-channel cascaded Mach–Zehnder interferometer (MZI) with flat-passband for coarse wavelength division multiplexing, based on a silicon nitride platform. The performance of MZI filters is closely related to the design of power splitters. By employing wavelength-insensitive bent directional couplers between each MZI for power distribution, the crosstalk among channels within the device can be minimized. Simulation results indicate that the center crosstalk of all four channels is less than −24 dB, with a 3-dB bandwidth of ∼20 nm. Measurement results show that the average crosstalk between adjacent channels is −16.5 dB. The 3-dB bandwidths of the four channels are ∼19.7, 19.3, 19.3, and 20.5 nm, respectively. Compared with conventional cascaded MZI devices using straight directional couplers, the bent DC-based device shows a clear advantage in crosstalk performance. This work is conducive to promoting the commercial application of such a device. © 2025 Society of Photo-Optical Instrumentation Engineers (SPIE)

关键词： Mach-Zehnder interferometers

来源：评论

学校读者我要写书评

暂无评论

1.27 GW/cm² Reverse Blocking E-Mode GaN-Si(100) Monolithic Heterogeneous integration Cascode Switch With Ultralow Turn-On Voltage and Dynamic RON

IEEE Electron Device Letters

引用

IEEE Electron Device Letters 2025年第5期46卷 805-808页

作者： Fan, Yutong Zhang, Weihang Zhang, Yachao Wu, Yinhe Feng, Xin Liu, Zhihong Jiang, Yang In Mak, Pui Hao, Yue Zhang, Jincheng Xidian University National Key Laboratory of Wide Bandgap Semiconductor Devices and Integrated Technology School of Microelectronics Xi'an710071 China Guangzhou Institute of Technology Xidian University Guangzhou Wide Bandgap Semiconductor Innovation Center Guangzhou510555 China Institute of Microelectronics University of Macau State Key Laboratory of Analog and Mixed-Signal Vlsi China

In this letter, an E-Mode GaN-Si(100) monolithic heterogeneous integration cascode switch (RBMHIC-switch) with reverse blocking compatibility on a SiC substrate with an AlN buffer layer is demonstrated. The RBMHIC-switch with LGD of 22~μ m showed a threshold voltage (VTH) of 2.64 V, a large forward gate voltage swing of 16.27 V, a turn-on voltage (VON) of 0.3 V, and an extremely low reverse leakage current (IR) of 3.5× 10-4 mA/mm at -2000 V. The forward breakdown voltage (VFBR) of 2264 V and reverse breakdown voltage (VRBR) of 2183 V with a specific on-resistance (RON, SP ) of 3.74 mΩ ċ cm2 were achieved, resulting in a forward power figure of merit (PFOM = V BR2 /RON,SP) of 1.35 GW/cm2 and reverse PFOM of 1.27 GW/cm2. The ratio between dynamic-RON and static-RON was 1.104 and 1.127 after a 10 ms 1900 V drain stress voltage (V DS- OFF ) and a 10 ms -1900 V V DS- OFF (delay time = 1~μ s) for the RBMHIC-switches, respectively, which were the best among all existing GaN power devices with reverse blocking capability. The thermal resistance at different temperatures was also extracted. The RBMHIC-switche shows decent overall characteristics as compared to the reported results. © 1980-2012 IEEE.

关键词： Gallium nitride

来源：评论

学校读者我要写书评

暂无评论

Research progress on 2 μm germanate glass fibers and their laser applications

引用

Ceramics International 2025年第12期51卷 16584-16592页

作者： Li, Yuze He, Xianfeng Wen, Zhongming Wu, Minbo Tang, Guowu Song, Xiangyang Qian, Qi School of Physics and Optoelectronic Engineering Guangdong University of Technology Guangzhou510006 China School of Physics and Optoelectronics South China University of Technology Guangzhou510641 China Guangdong Provincial Key Laboratory of Sensing Physics and System Integration Applications Guangdong University of Technology Guangzhou510006 China State Key Laboratory of Luminescent Materials and Devices Institute of Optical Communication Materials and Guangdong Provincial Key Laboratory of Fiber Laser Materials and Applied Techniques South China University of Technology Guangzhou510641 China

Fiber lasers operating at the eye-safe 2 μm spectral region have been extensively studied for their important applications in remote chemical sensing, high-resolution spectroscopy, coherent laser radar systems, biomedical systems, and optical parametric oscillators, etc. Among the rare earth (RE) ions, Tm3+ and Ho3+ ions are particularly suitable for the generation of 2 μm laser. In terms of glass matrix, germanate glass with outstanding infrared transparency, low phonon energy, and high RE ions solubility has been widely investigated as a promising candidate for 2 μm fiber lasers. In this review, recent advances in RE ions doped germanate glass fibers and fiber lasers operating at 2 μm wavelength band are evaluated in detail. Prospects, applications and challenges for the realization of high-gain and ultra-broadband germanate glass fibers in 2 μm fiber laser applications are analyzed and discussed. Considering the latest developments in newly developed germanate glass fibers, they are expected to produce high-performance 2 μm laser, including high-power, high-repetition-rate, narrow linewidth, and wideband tunable laser, for a diverse range of current and future applications. © 2024 Elsevier Ltd and Techna Group S.r.l.

关键词： Glass fibers

来源：评论

学校读者我要写书评

暂无评论

High-performance flexible Sb_(2)Se_(3) thin-film photodetector for tunable color imaging and wearable physiological monitoring applications

引用

Nano Research 2025年第2期18卷 687-698页

作者： Shuo Chen Hong-Bo Li Yi Fu Guo-Qiang Liu Muhammad Ishaq Jun Luo Jian-Min Li Bo Che Jing-Ting Luo Liming Ding Tao Chen Guang-Xing Liang Shenzhen Key Laboratory of Advanced Thin Films and Applications Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong ProvinceState Key Laboratory of Radio Frequency Heterogeneous IntegrationCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen 518060China The Hospital of Shenzhen General Station of Exit and Entry Frontier Inspection Shenzhen 518024China Key Laboratory of Artificial Micro-and Nano-structures of Ministry of Education School of Physics and TechnologyWuhan UniversityWuhan 430072China Hefei National Research Center for Physical Sciences at Microscale CAS Key Laboratory of Materials for Energy ConversionDepartment of Materials Science and EngineeringUniversity of Science and Technology of ChinaHefei 230026China Center for Excellence in Nanoscience(CAS) Key Laboratory of Nanosystem and Hierarchical Fabrication(CAS)National Center for Nanoscience and TechnologyBeijing 100190China

Antimony selenide(Sb_(2)Se_(3))has recently made considerable photovoltaic,advancements in photoelectrochemical,and photodetector research scenarios,owing to its advantageous material merits and superior optoelectronic *** contrast,the exploration of flexible Sb_(2)Se_(3) photoelectric devices are less attempted,though it possesses unique one-dimensional(1D)crystal structure to enable large deformation ***,we develop a flexible Sb2Ses thin-film photodetector on polyimide *** to the high-quality SbSes light absorber and benign interfaces at both back contact and heterojunction regions,the carrier dynamics are effectively *** leading flexible Sb_(2)Se_(3) photodetector showcases self-powered and broadband features,with exceptional responsivity of 0.51 A·W^(-1) and realistic detectivity up to 1.32×10^(13) Jones,ultra-fast response speed of 49 ns/351 ns of rise and decay times,and remarkable mechanical deformation stability,flourishing the high-level development for flexible Sb_(2)Se_(3) ***,a tunable single/dual-color flexible imaging system under band alignment modulation,along with a wearable and accurate heart rate/arterial blood oxygen saturation photoplethysmography detection system highlights the great application potential for flexible Sb,Ses photodetectors.

关键词： Sb_(2)Se_(3) flexible thin-film photodetector color imaging heart rate arterial blood oxygen saturation

来源：评论

学校读者我要写书评

暂无评论

Plasmonic nanolaser with tunable emitting wavelength near 1 µm

引用

Optics Letters 2025年第10期50卷 3305-3308页

作者： Wang, Yuhua Lu, Shudi Ma, Jingteng Lin, Runkang Wang, Peiling Xu, Yipeng Yue, Shizhong Wang, Zhijie Qu, Shengchun Huang, Le Liu, Kong Dong, Huafeng Guangdong Provincial Key Laboratory of Sensing Physics and System Integration Applications School of Physics and Optoelectronic Engineering Guangdong University of Technology Guangzhou510006 China Laboratory of Solid-State Optoelectronics Information Technology Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices Institute of Semiconductors Chinese Academy of Sciences Beijing100083 China College of Physical Science and Technology Hebei Normal University of Science & Technology Qinhuangdao066004 China

Surface plasmon polaritons (SPPs) can produce a confined electromagnetic field near the metal–dielectric interface, allowing energy to be compressed into a scale smaller than the optical diffraction limit. The characteristic enables the fabrication of sub-wavelength-sized, ultra-low-threshold, ultrafast, specific polarization, room-temperature lasing nanolasers, which is especially meaningful for the lasers emitting long wavelength light. In this work, we developed a Cs0.1MA0.9SnI3 perovskite plasmonic laser based on a metal–insulator–semiconductor (MIS) structure, demonstrating a low threshold of 281 µJ cm−2, a tunable emitting wavelength from 973 to 1023 nm, strong mode confinement at the cutoff height of 90 nm, and a rapid response lifetime of 29.43 ps. Our study represents the first, to the best of our knowledge, theoretical design and experimental production of perovskite plasmonic nanolaser with a tunable emitting wavelength near 1 µm, filling a significant research gap and paving the way for the application of perovskite nanolasers in optoelectronic integration and information technology. © 2025 Optica Publishing Group. All rights are reserved.

关键词： Surface plasmon resonance

来源：评论

学校读者我要写书评

暂无评论

Polarization-insensitive silicon intensity modulator with a maximum speed of 224 Gb/s

引用

Photonics Research 2025年第2期13卷 274-285页

作者： ZANYUN ZHANG BEIJU HUANG QIXIN WANG ZILONG CHEN KE LI KAIXIN ZHANG MEIXIN LI HAO JIANG JIAMING XING TIANJUN LIU XIAOQING LV GRAHAM T.REED Tianjin Key Laboratory of Optoelectronic Detection Technology and Systems School of Electronic and Information EngineeringTiangong University Key Laboratory of Optoelectronic Materials and Devices Institute of SemiconductorsChinese Academy of Sciences Suzhou Institute of Microelectronics and Optoelectronics Integration Key Laboratory for Biomedical Engineering of Ministry of Education Zhejiang University Peng Cheng Laboratory Optoelectronics Research Centre University of Southampton

Polarization-insensitive optical modulators allow an external laser to be remotely interconnected by single-mode optical fibers while avoiding polarization controllers,which would be convenient and cost-effective for co-packaged optics,5G,and future 6G *** this article,a polarization-insensitive silicon intensity modulator is proposed and experimentally demonstrated based on two-dimensional centrally symmetric gratings,featuring a low polarization-dependent loss of 0.15 dB in minimum and polarization insensitivity of eye *** device exhibits a low fiber-to-fiber insertion loss of 9 dB and an electro-optic (EO) bandwidth of 49.8 GHz.A modulation speed of up to 224 Gb/s is also demonstrated.

关键词： Chemical vapor deposition Indium tin oxide Optical transceivers Polarization maintaining fibers Signal transmission Silicon modulators

来源：评论

学校读者我要写书评

暂无评论

Experimental Study of Heavy Ion Irradiation Hardness for p-GaN HEMTs Under Off-State With Negative Gate Voltage

IEEE Electron Device Letters

引用

IEEE Electron Device Letters 2025年第5期46卷 709-712页

作者： Xie, Xintong Sun, Shuxiang Shen, Jingyu Liu, Renkuan Deng, Gaoqiang Yang, Cheng Zhou, Xin Wei, Jie Zhang, Bo Luo, Xiaorong University of Electronic Science and Technology of China State Key Laboratory of Electronic Thin Films and Integrated Devices Chengdu610054 China Company Ltd. Chongqing401331 China Chengdu University of Information Technology College of Microelectronics Chengdu610225 China

In this work, it is demonstrated for the first time that a negative gate voltage (VGS) during off-state can enhance the single-event effect (SEE) hardness of the 100-V E-mode p-GaN HEMTs. When subjected to irradiation from Ta ions with linear energy transfer of 78.40 MeV/(mg/cm2), the single-event transient (SET) current peak during irradiation can be significantly decreased if a negative VGS is applied, as opposed to using zero VGS. Furthermore, a negative VGS suppresses post-irradiation shifts in gate capacitance (CG ), threshold voltage (Vth) and off-state drain leakage current (IDSS), indicating improved stability against SEE. Numerical simulations have been performed to offer a physical insight into the underlying mechanisms. It is found that a negative VGS enables the simultaneous removal for radiation-induced holes and thus suppresses the SET current. The post-irradiation degradation of CG , Vth and IDSS are attributed to the radiation-induced acceptor-like traps at the Schottky junction, the AlGaN/GaN interface and the buffer layer, respectively. © 1980-2012 IEEE.

关键词： Gallium nitride

来源：评论

学校读者我要写书评

暂无评论

Multitarget gas alarm system for high-performance and anti-interference chemical warfare agents simulants detection

引用

Science China(Technological Sciences) 2025年第3期68卷 349-358页

作者： Yubin YUAN Qiang WU Menglong JIAO Haiyang WU Weihua LIU Xuming WANG Xiangrui BU Gong LI Chuanyu HAN Long HU Xin LI Xiaoli WANG Shool of Microelectronics School of Electronics and Information EngineeringXi’an Jiaotong UniversityXi’an710049China The Key Lab of Micro-nano Electronics and System Integration of Xi’an City Xi’an710049China Hangzhou Institute for Advanced Study University of Chinese Academy of SciencesHangzhou310024China School of Automation and Information Engineering Xi’an University of TechnologyXi’an710048China Key Laboratory for Physical Electronics and Devices of the Ministry of Education Xi’an Jiaotong UniversityXi’an710049China School of Science Xi’an Jiaotong UniversityXi’an710049China

Chemical warfare agents(CWAs)can cause significant harm to health and even death in a very short time even when inhaled in small amounts(~100 mg min/m^(3)).Detection equipment based on conventional techniques,including gas chromatography-mass spectrometry,Raman spectroscopy,fluorescence spectroscopy,and ion mobility spectrometry,have the disadvantages of high cost,long detection time,and high power ***,portable,and convenient equipment for target CWAs detection under interference is a *** this study,we propose an alarm system comprising a multitype micro sensor array and a field-programmable gate array-based readout circuit for CWAs simulants *** common volatile organic compound,temperature,and water vapor interference,the proposed multitype sensor-based detection system realizes an alarm function in less than 20 s with thresholds of 1 ppm dimethyl methylphosphonate(DMMP),4.6 ppm 2,2'-dichlorodiethyl ether(DCE),and 20 ppm SO_(2).Furthermore,the proposed detection system was evaluated outside the laboratory and passed the wilderness test,demonstrating its reliability in the *** believe that the proposed alarm system will contribute to the development of intelligent,portable,low-cost,and anti-interference CWAs detection technology.

关键词： alarm system CWAs simulants surface acoustic wave sensor mixed gas anti-interference

来源：评论

学校读者我要写书评

暂无评论

Organic cation-supported layered vanadate cathode for high-performance aqueous zinc-ion batteries

引用

Carbon Energy 2025年第2期7卷 1-12页

作者： Changding Wang Yingfang Li Sida Zhang Tian-Yi Sang|Yu Lei Ruiqi Liu Fu Wan Yuejiao Chen Weigen Chen|Yujie Zheng Shuhui Sun State Key Laboratory of Power Transmission Equipment Technology School of Electrical EngineeringNational Innovation Center for Industry-Education Integration of Energy Storage TechnologyChongqing UniversityChongqingChina Institute National de la Recherche Scientifique(INRS) CentreÉnergie Matériaux TélécommunicationsVarennesQuébecCanada MOE Key Laboratory of Low-grade Energy Utilization Technologies and Systems CQU-NUS Renewable Energy Materials&Devices Joint Laboratory School of Energy&Power EngineeringChongqing UniversityChongqingChina 4State Key Laboratory of Powder MetallurgyCentral South UniversityChangshaChina

Layered vanadates are ideal energy storage materials due to their multielectron redox reactions and excellent cation storage ***,their practical application still faces challenges,such as slow reaction kinetics and poor structural *** this study,we synthesized[Me_(2)NH_(2)]V_(3)O_(7)(MNVO),a layered vanadate with expended layer spacing and enhanced pH resistance,using a one-step simple hydrothermal gram-scale *** analyses and density functional theory(DFT)calculations revealed supportive ionic and hydrogen bonding interactions between the thin-layered[Me_(2)NH_(2)]+cation and[V_(3)O_(7)]-anion layers,clarifying the energy storage mechanism of the H^(+)/Zn^(2+)*** synergistic effect of these bonds and oxygen vacancies increased the electronic conductivity and significantly reduced the diffusion energy barrier of the insertion ions,thereby improving the rate capability of the *** an acidic electrolyte,aqueous zinc-ion batteries employing MNVO as the cathode exhibited a high specific capacity of 433 mAh g^(-1)at 0.1 A g^(-1).The prepared electrodes exhibited a maximum specific capacity of 237 mAh g^(-1)at 5 A g^(-1)and maintained a capacity retention of 83.5%after 10,000 *** work introduces a novel approach for advancing layered cathodes,paving the way for their practical application in energy storage devices.

关键词： [V_(3)O_(7)]-layers layered vanadates organic cations pH resistance zinc-ion batteries

来源：评论

学校读者我要写书评

暂无评论

Inverse design of terahertz metasurfaces for multi-channel holographic imaging based on the modified gradient descent method

引用

Optics Express 2025年第8期33卷 18005-18016页

作者： Zhao, Fengtao Dong, Peng Li, Kang Zhang, Ming Hou, Weimin Melikyan, Vazgen State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology School of Microelectronics Xidian University Xi’an710071 China School of Information Science and Engineering Hebei University of Science and Technology Shijiazhuang050018 China Chair of Microelectronic Circuits and Systems National Polytechnic University of Armenia Yerevan Armenia

In recent years, research on terahertz metasurfaces has made significant progress and is evolving towards multifunctional integration. Traditional forward design methods have gradually exposed efficiency bottlenecks in multifunctional design due to their high computational complexity. The proposal of the inverse design paradigms has brought revolutionary breakthroughs in the design efficiency of multifunctional metasurfaces and greatly reduced the design threshold. As an efficient inverse design optimization algorithm, the gradient descent method can rapidly optimize a phase distribution driven by multi-objective tasks. However, the loss function in this traditional gradient descent (TGD) method only considers image loss, leading to large gradients between adjacent phases in the phase distribution, which in turn results in low efficiency of the metasurface. To address this issue, we propose a modified gradient descent (MGD) method. By introducing gradient loss, this method effectively enhances the smoothness of phase distribution. As simulation verification, we used the MGD method to design a geometric phase terahertz metasurface, successfully achieving nine-channel dispersive meta-holography, which demonstrates the effectiveness of the gradient loss term. We believe the proposed MGD method has broad application prospects in multifunctional metasurface design. © 2025 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement.

关键词： Inverse problems

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：