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Schottky forward current transport mechanisms in AlGaN/GaN HEMTs over a wide temperature range

Chinese Physics B 2014年第9期23卷 409-413页

作者：武玫郑大勇王媛陈伟伟张凯马晓华张进成郝跃 School of Microelectronics Xidian University Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices School of MicroelectronicsXidian University The Fifth Electronics Research Institute of Ministry of Industry and Information Technology

The behavior of Schottky contacts in AlGaN/GaN high electron mobility transistors （HEMTs） is investigated by temperature-dependent current-voltage （T-I-V） measurements from 300 K to 473 K. The ideality factor and barrier height determined based on the thermionic emission （TE） theory are found to be strong functions of temperature, while present a great deviation from the theoretical value, which can be expounded by the barrier height inhomogeneities. In order to determine the forward current transport mechanisms, the experimental data are analyzed using numerical fitting method, considering the temperature-dependent series resistance. It is observed that the current flow at room temperature can be attributed to the tunneling mechanism, while thermionic emission current gains a growing proportion with an increase in temperature. Finally, the effective barrier height is derived based on the extracted thermionic emission component, and an evaluation of the density of dislocations is made from the I-V characteristics, giving a value of 1.49 × 10^7 cm^-2.

关键词： AlGaN/GaN HEMTs Schottky contacts forward current transport mechanism temperature dependence

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Influence of an ALD TiN capping layer on the PBTI characteristics of n-FinFET with ALD HfO2/TiN-capping/TiAl gate stacks

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Science China(Information Sciences) 2020年第2期63卷 248-250页

作者： Hong YANG Luwei QI Yanbo ZHANG Bo TANG Qianqian LIU Hao XU Xueli MA Xiaolei WANG Yongliang LI Huaxiang YIN Junfeng LI Huilong ZHU Chao ZHAO Wenwu WANG Tianchun YE Key Laboratory of Microelectronics Devices & Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences National Space Science Center Chinese Academy of Sciences School of Microelectronics University of Chinese Academy of Sciences

Dear editor,High k/metal gate (HKMG) stacks with fully gatelast processing have become the primary solution for sub-22-nm volume manufacturing with the development of complementary oxide semiconductor(CMOS) technology [1]. In the HKMG stack, titanium nitride (TiN) is observed to play an important role as a work-function metal and an HK

关键词： red Influence of an ALD TiN capping layer on the PBTI characteristics of n-FinFET with ALD HfO2/TiN-capping/TiAl gate stacks ALD FinFET

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Fabrication and Characterization of 1700 V 4H-SiC Vertical Double-Implanted Metal-Oxide-Semiconductor Field-Effect Transistors

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Chinese Physics Letters 2015年第12期32卷 109-112页

作者：申华军唐亚超彭朝阳邓小川白云王弋宇李诚瞻刘可安刘新宇 Key Laboratory of Microelectronics Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 Microwave Device and IC Department Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu 610054 Zhuzhou CSR Times Electric Co. LTD Zhuzhou 412001

The fabrication and characterization of 1700 V 7 A 4H-SiC vertical double-implanted metal-oxide-semiconductor field-effect transistors （VDMOSFETs） are reported. The drift layer is 17μm in thickness with 5 × 10^15 cm^-3 n-type doping, and the channel length is 1μm. The MOSFETs show a peak mobility of 17cm2/V.s and a typical threshold voltage of 3 V. The active area of 0.028cm2 delivers a forward drain current of 7A at Vcs = 22 V and VDS= 15 V. The specific on-resistance （Ron,sv） is 18mΩ.cm2 at VGS= 22 V and the blocking voltage is 1975 V （IDS 〈 lOOnA） at VGS = 0 V.

关键词： SiC Fabrication and Characterization of 1700 V 4H-SiC Vertical Double-Implanted Metal-Oxide-Semiconductor Field-Effect Transistors VGS VDS MOSFET

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Recent advances in phenothiazine-based dyes for dye-sensitized solar cells

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Chinese Chemical Letters 2016年第8期27卷 1304-1318页

作者： Jun-Sheng Luo Zhong-Quan Wan Chun-Yang Jia State Key Laboratory of Electronic Thin Films and Integrated Devices School of Microelectronics and Solid-State ElectronicsUniversity of Electronic Science and Technology of China

Dye-sensitized solar cells（DSSCs） have attracted significant attention as alternatives to conventional silicon-based solar cells owing to their low-cost production,facile fabrication,excellent stability and high power conversion efficiency（PCE）.The dye molecule is one of the key components in DSSCs since it significant influence on the PCE,charge separation,light-harvesting,as well as the device *** various dyes,easily tunable phenothiazine-based dyes hold a large proportion and achieve impressive photovoltaic *** class of dyes not only has superiorly non-planar butterfly structure but also possesses excellent electron donating ability and large π conjugated *** review summarized recent developments in the phenothiazine dyes,including small molecule phenothiazine dyes,polymer phenothiazine dyes and phenothiazine dyes for co-sensitization,especially focused on the developments and design concepts of small molecule phenothiazine dyes,as well as the correlation between molecular structures and the photovoltaic performances.

关键词： Dye-sensitized solar cells Molecular engineering Small molecule phenothiazine dyes Polymer phenothiazine dyes Co-sensitization Power conversion efficiency

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GaN chips for monitoring density and temperature of lead-acid batteries

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Chip 2025年

作者： Zhiyong Ye Ganyuan Deng Dongmiao Liu Jingyan Wang Xiaodi Gao Kwai Hei Li Ling Zhu College of Physics and Optoelectronic Engineering Shenzhen University Shenzhen 518060 China School of Microelectronics Southern University of Science and Technology Shenzhen 518055 China Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province Shenzhen University Shenzhen 518060 China State Key Laboratory of Radio Frequency Heterogeneous Integration Shenzhen University Shenzhen 518060 China

Lead-acid batteries are indispensable in various applications, and monitoring their status is crucial. However, the existing sensing units for lead-acid batteries are limited by their bulky size, slow response time, and lack of temperature sensing and compensation capabilities. This work proposes a compact GaN-based sensing device to simultaneously measure electrolyte density and temperature. The device comprises a light-emitting diode (LED) and a photodetector (PD) integrated on a GaN-on-sapphire chip in a monolithic configuration. The forward voltage of the LED reflects the electrolyte temperature, while the photocurrent of the PD varies with electrolyte density due to optical reflection changes at the exposed sapphire interface. The measured signals are processed using a decoupling matrix to achieve temperature compensation. The device exhibits a sensitivity of -29.1 μA/(g/cm 3 ) for density in the range of 1.09 g/cm 3 to 1.29 g/cm 3 , and -1.07 mV/°C for temperature in the range of 25 °C to 45 °C. The performance of the device is also validated through comparisons with commercial meters and real-time monitoring during the charging and discharging of the batteries. The device has notable advantages in size, cost, and fast response/recovery time (134.3/201.4 ms), rendering it a promising tool for monitoring lead-acid batteries.

关键词： GaN Lead-acid battery density Battery temperature

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Proton Irradiation Effects and Annealing Behaviors of 16Mb Magneto-resistive Random Access Memory(MRAM) 13

Proton Irradiation Effects and Annealing Behaviors of 16Mb M...

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2016 13th IEEE International Conference on Solid-State and Integrated Circuit technology (ICSICT)

作者： Haohao Zhang Jinshun Bi Yuan Duan Yannan Xu Ming Liu the Key Laboratory of Microelectronics Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing Jiaotong University

ISBN: (纸本)9781467397209

This paper presents the 3 Me V proton irradiation results of a 16 Mb commercial MRAM. The total ionizing dose（TID） effects induced by proton irradiaton and the following room temperature annealing behaviors are analyzed in detail. Read bit errors and electrical failures were observed when the proton fluence was accumulated to 2.5×10 particles/cm. The peripheral circuits are more sensitive to proton irradiation. These results are useful for hardening MRAM designs aiming at space-borne applications.

关键词： Proton Irradiation Effects and Annealing Behaviors of 16Mb Magneto-resistive Random Access Memory

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Thermal effect on endurance performance of 3-dimensional RRAM crossbar array

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Chinese Physics B 2016年第5期25卷 253-257页

作者：卢年端孙鹏霄李泠刘琦龙世兵吕杭炳刘明 Key Laboratory of Microelectronics Devices&Integrated Technology Institute of Microelectronics of Chinese Academy of SciencesBeijing 100029China Jiangsu National Synergetic Innovation Center for Advanced Materials Nanjing 210000China

Three-dimensional（3D） crossbar array architecture is one of the leading candidates for future ultra-high density nonvolatile memory applications. To realize the technological potential, understanding the reliability mechanisms of the3 D RRAM array has become a field of intense research. In this work, the endurance performance of the 3D 1D1 R crossbar array under the thermal effect is investigated in terms of numerical simulation. It is revealed that the endurance performance of the 3D 1D1 R array would be seriously deteriorated under thermal effects as the feature size scales down to a relatively small value. A possible method to alleviate the thermal effects is provided and verified by numerical simulation.

关键词： 3-dimensional resistive random access memory（RRAM） thermal effect endurance performance

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Radio-frequency transistors from millimeter-scale graphene domains

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Chinese Physics B 2014年第11期23卷 470-475页

作者：魏子钧傅云义刘竞博王紫东贾越辉郭剑任黎明陈远富张酣黄如张兴 Institute of Microelectronics Peking University State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China School of Physics Peking University

Graphene is a new promising candidate for application in radio-frequency （RF） electronics due to its excellent elec- tronic properties such as ultrahigh carrier mobility, large threshold current density, and high saturation velocity. Recently, much progress has been made in the graphene-based RF field-effect transistors （RF-FETs）. Here we present for the first time the high-performance top-gated RF transistors using millimeter-scale single graphene domain on a SiO2/Si substrate through a conventional microfabrication process. A maximum cut-off frequency of 178 GHz and a peak maximum os- cillation frequency of 35 GHz are achieved in the graphene-domain-based FET with a gate length of 50 nm and 150 nm, respectively. This work shows that the millimeter-scale single graphene domain has great potential applications in RF devices and circuits.

关键词： millimeter-scale graphene domain radio-frequency transistor cut-off frequency maximum oscil-lation frequency

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Evolution of optical properties and molecular structure of PCBM films under proton irradiation

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Chinese Physics B 2022年第5期31卷 582-587页

作者： Guo-Dong Xiong Hui-Ping Zhu Lei Wang Bo Li Fa-Zhan Zhao Zheng-Sheng Han Key Laboratory of Science and Technology on Silicon Devices Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China University of the Chinese Academy of Sciences Beijing 100049China

Low-energy proton irradiation effects on the optical properties and the molecular structure of phenyl-C_(61)-butyric acid methyl ester(PCBM)are studied in this *** PCBM films are irradiated by 100-keV proton beams with fluences of 5×10^(12)p/cm^(2),5×10^(13)p/cm^(2),and 5×10^(14)p/cm^(2),*** photoluminescence(PL)peaks of the post-irradiated PCBM films show a progressive decrease in the peak intensity as the proton fluences increase,which can be attributed to the deep defect levels induced by proton ***,a slight blue-shift in the PL spectrum is also observed at a proton fluence of 5×10^(14)p/cm^(2).The underlying mechanism can be traced back to the lift of the lowest unoccupied molecular orbital(LUMO)level,which is caused by the attachment of methoxy radicals on ortho position of the phenyl ring in the post-irradiated PCBM *** work is of significance in understanding the radiation hardness and the damage mechanism of the PCBM film in radiation environments,which is essential before it is put into practical application in space.

关键词： PCBM proton irradiation effects optical property molecular structure

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Fabrication of 11-nm-Wide Silica-Like Lines Using X-Ray Diffraction Exposure

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中国物理快报（英文版） 2009年第8期26卷 271-273页

作者： ZHU Xiao-Li XIE Chang-Qing ZHANG Man-Hong LIU Ming CHEN Bao-Qin PAN Feng Laboratory of Advanced Materials Department of Materials Science and EngineeringTsinghua UniversityBeijing 100084 Key Laboratory of Nano-fabrication and Novel Devices Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijin Key Laboratory of Nano-fabrication and Novel Devices Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029 Laboratory of Advanced Materials Department of Materials Science and EngineeringTsinghua UniversityBeijing 100084

Fine silica-like lines with 11 nm width are successfully fabricated using x-ray Fresnel diffraction exposure. X-rays pass a mask of 175-nm-wide lines and 125-nm-wide spaces and form sharp peaks on a wafer coated with a layer of hydrogen silsesquioxane resist (HSQ). By precisely controlling the mask-wafer gap at 10 μm using the laser interferogram method, the fine structures are defined on HSQ. Experimental images are reproduced by a simulation using the one-dimensional beam propagation method. This lithographic technique presents a novel and convenient way to fabricate fine silica-like structures and devices in nano-optical and nanoelectronic applications.

关键词： MICROFABRICATION X-ray diffraction SILICA SEMICONDUCTOR wafers SURFACE coatings BEAM dynamics SIMULATION methods & models LITHOGRAPHY techniques NANOELECTRONICS

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