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Emergence of High-Temperature Superconducting Phase in Pressurized La_(3)Ni_(2)O_(7)Crystals

Chinese Physics Letters 2023年第11期40卷 114-119页

作者：侯钧杨芃焘刘子儀李婧嫄单鹏飞马良王罡王宁宁郭海中孙建平 Yoshiya Uwatoko 王猛张广铭王铂森程金光 Beijing National Laboratory for Condensed Matter Physics and Institute of PhysicsChinese Academy of SciencesBeijing 100190China School of Physical Sciences University of Chinese Academy of SciencesBeijing 100190China Center for Neutron Science and Technology Guangdong Provincial Key Laboratory of Magnetoelectric Physics and DevicesSchool of PhysicsSun Yat-Sen UniversityGuangzhou 510275China Key Laboratory of Materials Physics(Ministry of Education) School of Physics and MicroelectronicsZhengzhou UniversityZhengzhou 450052China Institute of Quantum Materials and Physics Henan Academy of SciencesZhengzhou 450046China Institute for Solid State Physics University of TokyoKashiwaChiba 277-8581Japan State Key Laboratory for Low dimensional Quantum Physics Department of PhysicsTsinghua UniversityBeijing 100084China

The recent report of pressure-induced structural transition and signature of superconductivity with T_(c)≈80 K above 14 GPa in La_(3)Ni_(2)O_(7)crystals has garnered considerable *** further elaborate this discovery,we carried out comprehensive resistance measurements on La_(3)Ni_(2)O_(7)crystals grown in an optical-image floating zone furnace under oxygen pressure(15 bar)using a diamond anvil cell(DAC)and cubic anvil cell(CAC),which employ a solid(KBr)and liquid(glycerol)pressure-transmitting medium,*** 1 measured in the DAC exhibits a semiconducting-like behavior with large resistance at low pressures and gradually becomes metallic upon *** pressures P 13.7 GPa we observed the appearance of a resistance drop of as much as~50%around 70 K,which evolves into a kink-like anomaly at pressures above 40 GPa and shifts to lower temperatures gradually with increasing magnetic *** observations are consistent with the recent report mentioned *** the other hand,sample 2 measured in the CAC retains metallic behavior in the investigated pressure range up to 15 *** hump-like anomaly in resistance around~130 K at ambient pressure disappears at P≥2 *** the pressure range of 11–15 GPa we observed the gradual development of a shoulder-like anomaly in resistance at low temperatures,which evolves into a pronounced drop of resistance of 98%below 62 K at 15 GPa,reaching a temperature-independent resistance of 20μΩbelow 20 ***,this resistance anomaly can be progressively shifted to lower temperatures by applying external magnetic fields,resembling a typical superconducting *** on sample 3 in the CAC reproduce the resistance drop at pressures above 10 GPa and realize zero resistance below 10 K at 15 GPa even though an unusual semiconducting-like behavior is retained in the normal *** on these results,we constructed a dome-shaped superconducting phase diagram and discuss some issues regarding the sa

关键词： behavior metallic Crystal

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Research on Kalman filter for one-dimensional discrete data

Research on Kalman filter for one-dimensional discrete data

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2021 International Conference on Information technology and Intelligent Control, CITIC 2021

作者： Wei, Fan Zhang, Zupei Jia, Kunpeng School of Computing Xi'an Shiyou University Shanxi Xi'an710065 China Key Laboratory of Microelectronic Devices and Integration Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China

Kalman filter processes the input and observation signals with noise on the basis of linear state space representation to obtain the system state or real signal. In the one-dimensional model, due to the lack of multi-dimensional description of the target, the prior estimate of the state is often the measured value of the previous moment. When the target state changes, the divergence phenomenon will occur. Aiming at the problem that the one-dimensional traditional Kalman filter lacks the target observation dimension, which leads to the divergence or imprecision of the filter, this paper focuses on improving the estimation method of the target state, and proposes a real-time prediction model based on the cascade structure. This model can improve the response of Kalman filter to the change of target state and dynamically adjust the Kalman iterative domain to improve the measurement accuracy. The digital signal filtering simulation is carried out and the performance of the filter is verified based on LabVIEW. Experimental results show that the algorithm can maintain the accuracy and real-time performance of filtering when only one dimension observation results are obtained. © 2021 Institute of Physics Publishing. All rights reserved.

关键词： Kalman filters

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Cell Structure and Process integration of a Novel 2T0C technology for High-Density Dram Application

Cell Structure and Process Integration of a Novel 2T0C Techn...

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China Semiconductor technology International Conference (CSTIC)

作者： Zheng-Yong Zhu Bok-Moon Kang Jing Zhang Xin-Lv Duan Jin-Juan Xiang Guan-Hua Yang Di Geng Wang Dan Xie-Shuai Wu Ming-Xu Liu Gui-Lei Wang Chao Zhao Beijing Superstring Academy of Memory Technology Beijing China Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing China

A new DRAM 2T0C cell is introduced to resolve those special issues for traditional 2T0C DRAM. In this technology, the read transistor holds dual gates. The data is stored in one gate of read transistor, and the other gate is used to control read operation. By writing different-level voltages into storage gate, the read transistor will have different threshold voltages by using the other gate as control gate. Compared with 1T1C DRAM, read operation in this new technology is non-destructive and therefore no explicit capacitor is required. Low leakage is essential for write transistor to obtain long data retention time. A few cell structures of this new 2T0C technology are discussed for high-density DRAM application, and challenges of process integration is also analyzed.

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Study on the Anomalous Characteristics of Random Telegraph Noise in FeFETs

Study on the Anomalous Characteristics of Random Telegraph N...

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IEEE Silicon Nanoelectronics Workshop (SNW)

作者： Puyang Cai Yishan Wu Zixuan Sun Hao Li Xiaolei Wang Zhigang Ji Runsheng Wang Ru Huang School of Integrated Circuits Peking University Beijing China National Key Laboratory of Advanced Micro and Nano Manufacture Technology Shanghai Jiaotong University Shanghai China Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences China Beijing

ISBN: (数字)9798350391633

ISBN: (纸本)9798350391640

In this work, we investigate the behavior of random telegraph noise (RTN) in HfO 2 -based FeFETs. Anomalously high location factors of RTN in FeFETs are observed for the first time, which can be successfully explained by the lateral domain wall motion, with the help of a dynamic 2-D phase-field simulation. This work reveals the unique characteristics of RTN in HfO 2 -based FeFETs and provides insight into the ferroelectric switching process.

关键词： Conferences Noise Dynamics Switches Hafnium oxide Silicon FeFETs

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A Chaos-RC4 Encryption Algorithm based on Memristive Neural Network 2

A Chaos-RC4 Encryption Algorithm based on Memristive Neural ...

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2nd IEEE International Conference on Electronic technology, Communication and Information, ICETCI 2022

作者： Liu, Yi'an Liu, Yili Liu, Shuang Li, Guo Liu, Yang University of Electronic Science and Technology of China State Key Laboratory of Electronic Thin Films and Integrated Devices Chengdu610054 China Chongqing Institute of Microelectronics Industry Technology Uestc Chongqing401332 China

ISBN: (纸本)9781728181158

This paper proposes an algorithm based on memristive neural network to realize Rivest Cipher 4 (RC4) encryption, which effectively releases the correlation between the input key and the output key stream of the RC4 algorithm. At the same time, this design improves both key Schedule Algorithm (KSA) and Pseudo Random Generation Algorithm (PRGA) of RC4 stream cipher. In the KSA process, a neural network with chaos is constructed by utilizing the non-linearity characteristics of the memristor, and the generated chaotic sequence having good randomness performance, is used as the input key of the RC4 algorithm to realize 'one time one secret' dynamic encryption. In the PRGA process, another sequence generated randomly by memristive neural network is used for a dynamic chaotic permutation on the data table of the S-box. Experiment results demonstrate the effectiveness of the algorithm, and show it has larger key space, higher security and stronger robustness than the traditional algorithm. © 2022 IEEE.

关键词： Memristors

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X-ray irradiation-induced degradation in Hf_(0.5)Zr_(0.5)O_(2) fully depleted silicon-on-insulator n-type metal oxide semiconductor field-effect transistors

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Rare Metals 2021年第11期40卷 3299-3307页

作者： Yu-Dong Li Qing-Zhu Zhang Fan-Yu Liu Zhao-Hao Zhang Feng-Yuan Zhang Hong-Bin Zhao Bo Li Jiang Yan Key Laboratory of Microelectronics Devices and Integrated Technology Integrated Circuit Advanced Process Center(ICAC)Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China University of Chinese Academy of Sciences Beijing 100049China State Key Laboratory of Advanced Materials for Smart Sensing GRINM Group Co.LtdBeijing 100088China Institute of Microelectronics Chinese Academy of SciencesBeijing 100029China School of Information Science and Technology North China University of TechnologyBeijing 100144China

The n-type ultrathin fully depleted silicon-on-insulator(FDSOI) metal-oxide-semiconductor field-effect transistors(MOSFETs),with a Hf_(0.5)Zr_(0.5)O_(2) high dielectric permittivity(high-k) dielectric as gate insulator,were *** total ionizing dose effects were investigated,and an X-ray radiation dose up to 1500 krad(Si) was applied for both long-and short-channel *** short-channel devices(0.025-0.100 μm) exhibited less irradiation sensitivity compared with the long-channel devices(0.35-16 μm),leading to a 71% reduction in the irradiation-induced drain current growth and a 26% decrease in the shift of the threshold *** was experimentally demonstrated that the OFF mode is the worst case among the three working conditions(OFF,ON and A110) for short-channel ***,the determined effective electron mobility was enhanced by 38% after X-ray irradiation,attributed to the different compensations for charges triggered by radiation between the highk dielectric and buried *** extracting the carrier mobility,gate length modulation,and source/drain(S/D)parasitic resistance,the degradation mechanism on X-ray irradiation was ***,the split capacitance-voltage measurements were used to validate the analysis.

关键词： Total ionizing dose Fully depleted silicon-on-insulator(FDSOI) Metal–oxide–semiconductor field-effect transistor(MOSFET) High-k Hf_(0.5)Zr_(0.5)O_(2)

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A Novel 1200-V Class SiC MOSFET with Schottky Barrier Diode for Improved third quadrant performance 15

A Novel 1200-V Class SiC MOSFET with Schottky Barrier Diode ...

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15th IEEE International Conference on ASIC, ASICON 2023

作者： Kong, Moufu Lin, Zhi Deng, Hongfei Yi, Bo Jin, Rui Yang, Hongqiang University of Electronic Science and Technology of China State Key Laboratory of Electronic Thin Films and Integrated Devices of China Chengdu China Chongqing University School of Microelectronics and Communication Engineering Chongqing China Huairou Laboratory Future Science City Smart Energy Research Centre Beijing China

ISBN: (纸本)9798350312980

A novel Schottky barrier diode (SBD) integrated Silicon carbide (SiC) asymmetric MOSFET structure is proposed in this paper. The proposed SiC MOSFET allows the integration of a Schottky barrier diode without requiring additional chip area. This design circumvents performance degradation issues arising from the bipolar degradation effect, which occurs due to the accumulation of stacking layer errors in the drift region during the conduction of the body PN diode in conventional SiC MOSFETs. Moreover, the knee voltage of the integrated SBD in the proposed structure is only one-third of body diode in the conventional structure, resulting in an enhanced performance in the third quadrant of the SiC MOSFET. © 2023 IEEE.

关键词： reverse recovery Schottky diode Silicon carbide MOSFET switching time

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A Novel Punch through Breakdown Trench MOS with Self-Adjustable Resistor for Low Temperature Coefficient of Breakdown Voltage 5

A Novel Punch through Breakdown Trench MOS with Self-Adjusta...

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5th IEEE International Conference on Electronics technology, ICET 2022

作者： Wang, Tongyang Li, Zehong Huang, Lingxuan Liu, Xiaohan University of Electronic Science and Technology of China State Key Laboratory of Electronic Thin Films and Integrated Devices Chengdu China Chongqing Institute of Microelectronics Industry Technology University of Electronic Science and Technology of China Chongqing China

ISBN: (纸本)9781665485081

In this paper, a novel punch through breakdown trench MOS with self-adjustable resistor (SAR-PT-TMOS) is proposed for low temperature coefficient of breakdown voltage. The SAR-PT-TMOS features a P-doping self-adjustable resistor (SAR) which is connected to the source electrode and sandwiched by the trench gate and N-source region. As the temperature increases, the width of space charge region between the P-SAR region and the N-source region decreases, which further increases the width of SAR and decreases the resistance of SAR. Therefore, the voltage drop across SAR has a negative temperature coefficient and provides a negative feedback voltage for the breakdown voltage. As a result, the temperature coefficient of breakdown voltage can be reduced by 94.7% compared with that of the conventional punch through breakdown trench MOS (PTTMOS) with only 12.7% increment of on-state voltage drop. © 2022 IEEE.

关键词： Temperature

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Older and Wiser: The Marriage of Device Aging and Intellectual Property Protection of DNNs 24

Older and Wiser: The Marriage of Device Aging and Intellectu...

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61st ACM/IEEE Design Automation Conference, DAC 2024

作者： Lin, Ning Wang, Shaocong Zhang, Yue He, Yangu Wong, Kwunhang Basu, Arindam Shang, Dashan Chen, Xiaoming Wang, Zhongrui Department of Electrical and Electronic Engineering The University of Hong Kong Hong Kong Access - Ai Chip Center for Emerging Smart Systems InnoHK Centers Hong Kong Science Park Hong Kong Institute of Computing Technology Chinese Academy of Sciences Beijing China Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing China Department of Electrical Engineering City University of HongKong Hong Kong

ISBN: (纸本)9798400706011

Deep neural networks (DNNs), such as the widely-used GPT-3 with billions of parameters, are often kept secret due to high training costs and privacy concerns surrounding the data used to train them. Previous approaches to securing DNNs typically require expensive circuit redesign, resulting in additional overheads such as increased area, energy consumption, and latency. To address these issues, we propose a novel hardware-software co-design approach for DNN intellectual property (IP) protection that capitalizes on the inherent aging characteristics of circuits and a novel differential orientation fine-tuning (DOFT) to ensure effective ***-wise, we employ random aging to produce authorized chips. This process circumvents the need for chip redesign, thereby eliminating any additional hardware overhead during the inference procedure of DNNs. Moreover, the authorized chips demonstrate a considerable disparity in DNN inference performance when compared to unauthorized chips. Software-wise, we propose a novel DOFT, which allows pre-trained DNNs to maintain their original accuracy on authorized chips with minimal fine-tuning, while the model's performance on unauthorized chips is reduced to random guessing. Extensive experiments on various models, including MLP, VGG, ResNet, Mixer, and SwinTransformer, with lightweight binary and practical multi-bit weights demonstrate that the proposed method achieves effective IP protection, with only 10% accuracy on unauthorized chips, while preserving nearly the original accuracy on authorized ones. © 2024 Copyright is held by the owner/author(s). Publication rights licensed to ACM.

关键词： Deep neural networks

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Trigger mechanism of PDSOI NMOS devices for ESD protection operating under elevated temperatures

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Chinese Physics B 2021年第7期30卷 613-618页

作者： Jia-Xin Wang Xiao-Jing Li Fa-Zhan Zhao Chuan-Bin Zeng Duo-Li Li Lin-Chun Gao Jiang-Jiang Li Bo Li Zheng-Sheng Han Jia-Jun Luo Institute of Microelectronics Chinese Academy of SciencesBeijing 100029China Key Laboratory of Science and Technology on Silicon Devices Chinese Academy of SciencesBeijing 100029China University of Chinese Academy of Sciences Beijing 100029China

Trigger characteristics of electrostatic discharge(ESD)protecting devices operating under various ambient temperatures ranging from 30℃to 195℃are *** studied ESD protecting devices are the H-gate NMOS transistors fabricated with a 0.18-μm partially depleted silicon-on-insulator(PDSOI)*** measurements are conducted by using a transmission line pulse(TLP)test *** different temperature-dependent trigger characteristics of groundedgate(GGNMOS)mode and the gate-triggered(GTNMOS)mode are analyzed in *** underlying physical mechanisms related to the effect of temperature on the first breakdown voltage V_(T1)investigated through the assist of technology computer-aided design(TCAD)simulation.

关键词： ESD trigger voltage temperature GGNMOS GTNMOS TCAD

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