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2023 International Conference on Cyber Security, Artificial Intelligence, and Digital Economy, CSAIDE 2023

作者： Xiao, Xiao Liwei, Meng Yian, Liu Shaogang, Hu Guanchao, Qiao School of Software Engineering Chongqing University of Posts and Telecommunications Chongqing China State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu China Chongqing Institute of Microelectronics Industry Technology University of Electronic Science and Technology of China Chongqing China

ISBN: (纸本)9781510666597

Falls have become an essential factor affecting life safety in recent years. Given the high energy consumption associated with running models over extended periods in practical engineering, this research presents a network architecture, Spiking-Rep-YOLOv3, which is more suitable for transformation into Spiking neural networks (SNNs). We redesign the RepVGG-based backbone network by improving the YOLOv3-tiny network. Second, we speed up inference by employing neuron normalization to reduce information loss during inference after neural network transformation. We experimented with Spiking-Rep-YOLOv3 on the E-FPDS public dataset and showed that the network achieved similar accuracy as YOLOv3-tiny and only 40.7% of the energy consumption of the latter. © 2023 SPIE.

关键词： Neural networks

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Arrhythmia classification method based on knowledge distillation and 2D ECG images 3

Arrhythmia classification method based on knowledge distilla...

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3rd International Conference on Neural Networks, Information and Communication Engineering, NNICE 2023

作者： Li, Renwei Meng, Liwei Liu, Yian Hu, Shaogang Qiao, Guanchao School of Software Engineering Chongqing University of Posts and Telecommunications Chongqing China University of Electronic Science and Technology of China State Key Laboratory of Electronic Thin Films and Integrated Devices Chengdu China Chongqing Institute of Microelectronics Industry Technology University of Electronic Science and Technology of China Chongqing China

ISBN: (纸本)9798350335972

Arrhythmia classification is crucial for identifying and preventing the potential risks associated with cardiovascular diseases. Currently., using deep learning for arrhythmia classification faces challenges of model complexity and deployment difficulty. To address this., We present a novel approach for classifying arrhythmias using knowledge distillation and 2D ECG images. In this study., the classification of the MIT-BIH dataset is performed according to AAMI criteria. Preprocessing., such as denoising., interception., and 2D grayscale image conversion., is first performed. Then., high-performance 2D-CNN models are pre-trained using 2D ECG images as the teacher model., and a lightweight 1D-CNN is constructed as the student model. Finally., we align raw and 2D ECG data., utilizing knowledge distillation to allow the student model to learn from the teacher model during the training process., thus enabling model compression. The final results show that the method significantly improves the performance of the student model in arrhythmia classification. For overall performance., when using Vgg16 as the teacher model., Acc and P+ improve by 1.62% and 6.64%., and Se is comparable. In addition., the F1-score values have been improved in all categories. The proposed method provides a feasible approach for low computational power device deployment for arrhythmia classification. © 2023 IEEE.

关键词： Electrocardiograms

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Siamese Network Object Tracking Based on Fusion of Visible and Event Cameras

Siamese Network Object Tracking Based on Fusion of Visible a...

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2023 International Conference on Cyber Security, Artificial Intelligence, and Digital Economy, CSAIDE 2023

作者： Hu, Qiang Meng, Liwei Liu, Yian Hu, Shaogang Qiao, Guanchao School of Software Engineering Chongqing University of Posts and Telecommunications Chongqing China State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu China Chongqing Institute of Microelectronics Industry Technology University of Electronic Science and Technology of China Chongqing China

ISBN: (纸本)9781510666597

Object tracking is widely used in daily life. The existing visible camera-based tracking methods are difficult to track objects accurately in the face of degraded scenes such as fast movement, high contrast, and low illumination, which will cause the loss of tracking performance. An event camera is a biologically driven sensor with higher dynamic range, smaller time delay, and higher light sensitivity than traditional visible cameras. We propose a siamese network object tracking method that fuses visible and event cameras to realize more reliable tracking. We design a feature fusion method combining visible and event camera features based on attention mechanism. It realizes the cooperation of both sensors and improves the accuracy of tracking. Experiments on the VisEvent dataset reveal that our network outperforms single-modality trackers by 5.8% and outperforms other fusion-based methods by 2.1%. © 2023 SPIE.

关键词： Cameras

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Emergence of High-Temperature Superconducting Phase in Pressurized La_(3)Ni_(2)O_(7)Crystals

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Chinese Physics Letters 2023年第11期40卷 114-119页

作者：侯钧杨芃焘刘子儀李婧嫄单鹏飞马良王罡王宁宁郭海中孙建平 Yoshiya Uwatoko 王猛张广铭王铂森程金光 Beijing National Laboratory for Condensed Matter Physics and Institute of PhysicsChinese Academy of SciencesBeijing 100190China School of Physical Sciences University of Chinese Academy of SciencesBeijing 100190China Center for Neutron Science and Technology Guangdong Provincial Key Laboratory of Magnetoelectric Physics and DevicesSchool of PhysicsSun Yat-Sen UniversityGuangzhou 510275China Key Laboratory of Materials Physics(Ministry of Education) School of Physics and MicroelectronicsZhengzhou UniversityZhengzhou 450052China Institute of Quantum Materials and Physics Henan Academy of SciencesZhengzhou 450046China Institute for Solid State Physics University of TokyoKashiwaChiba 277-8581Japan State Key Laboratory for Low dimensional Quantum Physics Department of PhysicsTsinghua UniversityBeijing 100084China

The recent report of pressure-induced structural transition and signature of superconductivity with T_(c)≈80 K above 14 GPa in La_(3)Ni_(2)O_(7)crystals has garnered considerable *** further elaborate this discovery,we carried out comprehensive resistance measurements on La_(3)Ni_(2)O_(7)crystals grown in an optical-image floating zone furnace under oxygen pressure(15 bar)using a diamond anvil cell(DAC)and cubic anvil cell(CAC),which employ a solid(KBr)and liquid(glycerol)pressure-transmitting medium,*** 1 measured in the DAC exhibits a semiconducting-like behavior with large resistance at low pressures and gradually becomes metallic upon *** pressures P 13.7 GPa we observed the appearance of a resistance drop of as much as~50%around 70 K,which evolves into a kink-like anomaly at pressures above 40 GPa and shifts to lower temperatures gradually with increasing magnetic *** observations are consistent with the recent report mentioned *** the other hand,sample 2 measured in the CAC retains metallic behavior in the investigated pressure range up to 15 *** hump-like anomaly in resistance around~130 K at ambient pressure disappears at P≥2 *** the pressure range of 11–15 GPa we observed the gradual development of a shoulder-like anomaly in resistance at low temperatures,which evolves into a pronounced drop of resistance of 98%below 62 K at 15 GPa,reaching a temperature-independent resistance of 20μΩbelow 20 ***,this resistance anomaly can be progressively shifted to lower temperatures by applying external magnetic fields,resembling a typical superconducting *** on sample 3 in the CAC reproduce the resistance drop at pressures above 10 GPa and realize zero resistance below 10 K at 15 GPa even though an unusual semiconducting-like behavior is retained in the normal *** on these results,we constructed a dome-shaped superconducting phase diagram and discuss some issues regarding the sa

关键词： behavior metallic Crystal

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Piezovalley effect and magnetovalley coupling in altermagnetic semiconductors studied by first-principles calculations

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Physical Review B 2025年第13期111卷 134429-134429页

作者： Weifeng Xie Xiong Xu Yunliang Yue Huayan Xia Hui Wang School of Microelectronics and Physics Hunan University of Technology and Business Changsha 410205 China School of Physics Hunan Key Laboratory of Super Microstructure and Ultrafast Process Hunan Key Laboratory of Nanophotonics and Devices State Key Laboratory of Powder Metallurgy Central South University Changsha 410083 China College of Information Engineering Yangzhou University Yangzhou 225127 China

Clarifying the physical origin of valley polarization and exploring promising ferrovalley materials are conducive to the application of valley degrees of freedom in the field of information storage. Here, we explore two altermagnetic semiconductors (monolayers Nb2Se2O and Nb2SeTeO) with Néel temperature above room temperature based on first-principles calculations. We find that uniaxial strain induces valley polarization without spin-orbital coupling (SOC) in altermagnets owing to the piezovalley effect, while uniaxial compressive strain transforms the intrinsic ferrovalley semiconductor into a semimetal, half metal, and metal. Moreover, moderate biaxial compressive strain renders Janus monolayer Nb2SeTeO to robust Dirac-conelike band dispersion. The SOC and intrinsic in-plane magnetocrystalline anisotropy energy induce Dirac-conelike altermagnets to generate apparent valley polarization through magnetovalley coupling. In terms of SOC perturbation, we elucidate the physical mechanism behind in-plane magnetization-induced valley polarization and demonstrate that valley polarization is negatively correlated with the band gap. The present work reveals the physical origin of valley polarization in altermagnets and expands the application of ferrovalley at room temperature in valleytronics.

关键词： Degrees of freedom (mechanics)

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Research on Kalman filter for one-dimensional discrete data

Research on Kalman filter for one-dimensional discrete data

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2021 International Conference on Information technology and Intelligent Control, CITIC 2021

作者： Wei, Fan Zhang, Zupei Jia, Kunpeng School of Computing Xi'an Shiyou University Shanxi Xi'an710065 China Key Laboratory of Microelectronic Devices and Integration Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China

Kalman filter processes the input and observation signals with noise on the basis of linear state space representation to obtain the system state or real signal. In the one-dimensional model, due to the lack of multi-dimensional description of the target, the prior estimate of the state is often the measured value of the previous moment. When the target state changes, the divergence phenomenon will occur. Aiming at the problem that the one-dimensional traditional Kalman filter lacks the target observation dimension, which leads to the divergence or imprecision of the filter, this paper focuses on improving the estimation method of the target state, and proposes a real-time prediction model based on the cascade structure. This model can improve the response of Kalman filter to the change of target state and dynamically adjust the Kalman iterative domain to improve the measurement accuracy. The digital signal filtering simulation is carried out and the performance of the filter is verified based on LabVIEW. Experimental results show that the algorithm can maintain the accuracy and real-time performance of filtering when only one dimension observation results are obtained. © 2021 Institute of Physics Publishing. All rights reserved.

关键词： Kalman filters

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Cell Structure and Process integration of a Novel 2T0C technology for High-Density Dram Application

Cell Structure and Process Integration of a Novel 2T0C Techn...

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China Semiconductor technology International Conference (CSTIC)

作者： Zheng-Yong Zhu Bok-Moon Kang Jing Zhang Xin-Lv Duan Jin-Juan Xiang Guan-Hua Yang Di Geng Wang Dan Xie-Shuai Wu Ming-Xu Liu Gui-Lei Wang Chao Zhao Beijing Superstring Academy of Memory Technology Beijing China Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing China

A new DRAM 2T0C cell is introduced to resolve those special issues for traditional 2T0C DRAM. In this technology, the read transistor holds dual gates. The data is stored in one gate of read transistor, and the other gate is used to control read operation. By writing different-level voltages into storage gate, the read transistor will have different threshold voltages by using the other gate as control gate. Compared with 1T1C DRAM, read operation in this new technology is non-destructive and therefore no explicit capacitor is required. Low leakage is essential for write transistor to obtain long data retention time. A few cell structures of this new 2T0C technology are discussed for high-density DRAM application, and challenges of process integration is also analyzed.

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Study on the Anomalous Characteristics of Random Telegraph Noise in FeFETs

Study on the Anomalous Characteristics of Random Telegraph N...

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IEEE Silicon Nanoelectronics Workshop (SNW)

作者： Puyang Cai Yishan Wu Zixuan Sun Hao Li Xiaolei Wang Zhigang Ji Runsheng Wang Ru Huang School of Integrated Circuits Peking University Beijing China National Key Laboratory of Advanced Micro and Nano Manufacture Technology Shanghai Jiaotong University Shanghai China Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences China Beijing

ISBN: (数字)9798350391633

ISBN: (纸本)9798350391640

In this work, we investigate the behavior of random telegraph noise (RTN) in HfO 2 -based FeFETs. Anomalously high location factors of RTN in FeFETs are observed for the first time, which can be successfully explained by the lateral domain wall motion, with the help of a dynamic 2-D phase-field simulation. This work reveals the unique characteristics of RTN in HfO 2 -based FeFETs and provides insight into the ferroelectric switching process.

关键词： Conferences Noise Dynamics Switches Hafnium oxide Silicon FeFETs

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X-ray irradiation-induced degradation in Hf_(0.5)Zr_(0.5)O_(2) fully depleted silicon-on-insulator n-type metal oxide semiconductor field-effect transistors

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Rare Metals 2021年第11期40卷 3299-3307页

作者： Yu-Dong Li Qing-Zhu Zhang Fan-Yu Liu Zhao-Hao Zhang Feng-Yuan Zhang Hong-Bin Zhao Bo Li Jiang Yan Key Laboratory of Microelectronics Devices and Integrated Technology Integrated Circuit Advanced Process Center(ICAC)Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China University of Chinese Academy of Sciences Beijing 100049China State Key Laboratory of Advanced Materials for Smart Sensing GRINM Group Co.LtdBeijing 100088China Institute of Microelectronics Chinese Academy of SciencesBeijing 100029China School of Information Science and Technology North China University of TechnologyBeijing 100144China

The n-type ultrathin fully depleted silicon-on-insulator(FDSOI) metal-oxide-semiconductor field-effect transistors(MOSFETs),with a Hf_(0.5)Zr_(0.5)O_(2) high dielectric permittivity(high-k) dielectric as gate insulator,were *** total ionizing dose effects were investigated,and an X-ray radiation dose up to 1500 krad(Si) was applied for both long-and short-channel *** short-channel devices(0.025-0.100 μm) exhibited less irradiation sensitivity compared with the long-channel devices(0.35-16 μm),leading to a 71% reduction in the irradiation-induced drain current growth and a 26% decrease in the shift of the threshold *** was experimentally demonstrated that the OFF mode is the worst case among the three working conditions(OFF,ON and A110) for short-channel ***,the determined effective electron mobility was enhanced by 38% after X-ray irradiation,attributed to the different compensations for charges triggered by radiation between the highk dielectric and buried *** extracting the carrier mobility,gate length modulation,and source/drain(S/D)parasitic resistance,the degradation mechanism on X-ray irradiation was ***,the split capacitance-voltage measurements were used to validate the analysis.

关键词： Total ionizing dose Fully depleted silicon-on-insulator(FDSOI) Metal–oxide–semiconductor field-effect transistor(MOSFET) High-k Hf_(0.5)Zr_(0.5)O_(2)

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A Chaos-RC4 Encryption Algorithm based on Memristive Neural Network 2

A Chaos-RC4 Encryption Algorithm based on Memristive Neural ...

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2nd IEEE International Conference on Electronic technology, Communication and Information, ICETCI 2022

作者： Liu, Yi'an Liu, Yili Liu, Shuang Li, Guo Liu, Yang University of Electronic Science and Technology of China State Key Laboratory of Electronic Thin Films and Integrated Devices Chengdu610054 China Chongqing Institute of Microelectronics Industry Technology Uestc Chongqing401332 China

ISBN: (纸本)9781728181158

This paper proposes an algorithm based on memristive neural network to realize Rivest Cipher 4 (RC4) encryption, which effectively releases the correlation between the input key and the output key stream of the RC4 algorithm. At the same time, this design improves both key Schedule Algorithm (KSA) and Pseudo Random Generation Algorithm (PRGA) of RC4 stream cipher. In the KSA process, a neural network with chaos is constructed by utilizing the non-linearity characteristics of the memristor, and the generated chaotic sequence having good randomness performance, is used as the input key of the RC4 algorithm to realize 'one time one secret' dynamic encryption. In the PRGA process, another sequence generated randomly by memristive neural network is used for a dynamic chaotic permutation on the data table of the S-box. Experiment results demonstrate the effectiveness of the algorithm, and show it has larger key space, higher security and stronger robustness than the traditional algorithm. © 2022 IEEE.

关键词： Memristors

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