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检索条件"机构=Key Laboratory of Microelectronics Devices and Integration Technology"
1307 条 记 录,以下是201-210 订阅
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Emergence of High-Temperature Superconducting Phase in Pressurized La_(3)Ni_(2)O_(7)Crystals
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Chinese Physics Letters 2023年 第11期40卷 114-119页
作者: 侯钧 杨芃焘 刘子儀 李婧嫄 单鹏飞 马良 王罡 王宁宁 郭海中 孙建平 Yoshiya Uwatoko 王猛 张广铭 王铂森 程金光 Beijing National Laboratory for Condensed Matter Physics and Institute of PhysicsChinese Academy of SciencesBeijing 100190China School of Physical Sciences University of Chinese Academy of SciencesBeijing 100190China Center for Neutron Science and Technology Guangdong Provincial Key Laboratory of Magnetoelectric Physics and DevicesSchool of PhysicsSun Yat-Sen UniversityGuangzhou 510275China Key Laboratory of Materials Physics(Ministry of Education) School of Physics and MicroelectronicsZhengzhou UniversityZhengzhou 450052China Institute of Quantum Materials and Physics Henan Academy of SciencesZhengzhou 450046China Institute for Solid State Physics University of TokyoKashiwaChiba 277-8581Japan State Key Laboratory for Low dimensional Quantum Physics Department of PhysicsTsinghua UniversityBeijing 100084China
The recent report of pressure-induced structural transition and signature of superconductivity with T_(c)≈80 K above 14 GPa in La_(3)Ni_(2)O_(7)crystals has garnered considerable *** further elaborate this discovery,... 详细信息
来源: 评论
Research on Kalman filter for one-dimensional discrete data
Research on Kalman filter for one-dimensional discrete data
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2021 International Conference on Information technology and Intelligent Control, CITIC 2021
作者: Wei, Fan Zhang, Zupei Jia, Kunpeng School of Computing Xi'an Shiyou University Shanxi Xi'an710065 China Key Laboratory of Microelectronic Devices and Integration Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China
Kalman filter processes the input and observation signals with noise on the basis of linear state space representation to obtain the system state or real signal. In the one-dimensional model, due to the lack of multi-... 详细信息
来源: 评论
Cell Structure and Process integration of a Novel 2T0C technology for High-Density Dram Application
Cell Structure and Process Integration of a Novel 2T0C Techn...
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China Semiconductor technology International Conference (CSTIC)
作者: Zheng-Yong Zhu Bok-Moon Kang Jing Zhang Xin-Lv Duan Jin-Juan Xiang Guan-Hua Yang Di Geng Wang Dan Xie-Shuai Wu Ming-Xu Liu Gui-Lei Wang Chao Zhao Beijing Superstring Academy of Memory Technology Beijing China Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing China
A new DRAM 2T0C cell is introduced to resolve those special issues for traditional 2T0C DRAM. In this technology, the read transistor holds dual gates. The data is stored in one gate of read transistor, and the other ...
来源: 评论
Study on the Anomalous Characteristics of Random Telegraph Noise in FeFETs
Study on the Anomalous Characteristics of Random Telegraph N...
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IEEE Silicon Nanoelectronics Workshop (SNW)
作者: Puyang Cai Yishan Wu Zixuan Sun Hao Li Xiaolei Wang Zhigang Ji Runsheng Wang Ru Huang School of Integrated Circuits Peking University Beijing China National Key Laboratory of Advanced Micro and Nano Manufacture Technology Shanghai Jiaotong University Shanghai China Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences China Beijing
In this work, we investigate the behavior of random telegraph noise (RTN) in HfO 2 -based FeFETs. Anomalously high location factors of RTN in FeFETs are observed for the first time, which can be successfully explained... 详细信息
来源: 评论
A Chaos-RC4 Encryption Algorithm based on Memristive Neural Network  2
A Chaos-RC4 Encryption Algorithm based on Memristive Neural ...
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2nd IEEE International Conference on Electronic technology, Communication and Information, ICETCI 2022
作者: Liu, Yi'an Liu, Yili Liu, Shuang Li, Guo Liu, Yang University of Electronic Science and Technology of China State Key Laboratory of Electronic Thin Films and Integrated Devices Chengdu610054 China Chongqing Institute of Microelectronics Industry Technology Uestc Chongqing401332 China
This paper proposes an algorithm based on memristive neural network to realize Rivest Cipher 4 (RC4) encryption, which effectively releases the correlation between the input key and the output key stream of the RC4 al... 详细信息
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X-ray irradiation-induced degradation in Hf_(0.5)Zr_(0.5)O_(2) fully depleted silicon-on-insulator n-type metal oxide semiconductor field-effect transistors
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Rare Metals 2021年 第11期40卷 3299-3307页
作者: Yu-Dong Li Qing-Zhu Zhang Fan-Yu Liu Zhao-Hao Zhang Feng-Yuan Zhang Hong-Bin Zhao Bo Li Jiang Yan Key Laboratory of Microelectronics Devices and Integrated Technology Integrated Circuit Advanced Process Center(ICAC)Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China University of Chinese Academy of Sciences Beijing 100049China State Key Laboratory of Advanced Materials for Smart Sensing GRINM Group Co.LtdBeijing 100088China Institute of Microelectronics Chinese Academy of SciencesBeijing 100029China School of Information Science and Technology North China University of TechnologyBeijing 100144China
The n-type ultrathin fully depleted silicon-on-insulator(FDSOI) metal-oxide-semiconductor field-effect transistors(MOSFETs),with a Hf_(0.5)Zr_(0.5)O_(2) high dielectric permittivity(high-k) dielectric as gate insulato... 详细信息
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A Novel 1200-V Class SiC MOSFET with Schottky Barrier Diode for Improved third quadrant performance  15
A Novel 1200-V Class SiC MOSFET with Schottky Barrier Diode ...
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15th IEEE International Conference on ASIC, ASICON 2023
作者: Kong, Moufu Lin, Zhi Deng, Hongfei Yi, Bo Jin, Rui Yang, Hongqiang University of Electronic Science and Technology of China State Key Laboratory of Electronic Thin Films and Integrated Devices of China Chengdu China Chongqing University School of Microelectronics and Communication Engineering Chongqing China Huairou Laboratory Future Science City Smart Energy Research Centre Beijing China
A novel Schottky barrier diode (SBD) integrated Silicon carbide (SiC) asymmetric MOSFET structure is proposed in this paper. The proposed SiC MOSFET allows the integration of a Schottky barrier diode without requiring... 详细信息
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A Novel Punch through Breakdown Trench MOS with Self-Adjustable Resistor for Low Temperature Coefficient of Breakdown Voltage  5
A Novel Punch through Breakdown Trench MOS with Self-Adjusta...
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5th IEEE International Conference on Electronics technology, ICET 2022
作者: Wang, Tongyang Li, Zehong Huang, Lingxuan Liu, Xiaohan University of Electronic Science and Technology of China State Key Laboratory of Electronic Thin Films and Integrated Devices Chengdu China Chongqing Institute of Microelectronics Industry Technology University of Electronic Science and Technology of China Chongqing China
In this paper, a novel punch through breakdown trench MOS with self-adjustable resistor (SAR-PT-TMOS) is proposed for low temperature coefficient of breakdown voltage. The SAR-PT-TMOS features a P-doping self-adjustab... 详细信息
来源: 评论
Older and Wiser: The Marriage of Device Aging and Intellectual Property Protection of DNNs  24
Older and Wiser: The Marriage of Device Aging and Intellectu...
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61st ACM/IEEE Design Automation Conference, DAC 2024
作者: Lin, Ning Wang, Shaocong Zhang, Yue He, Yangu Wong, Kwunhang Basu, Arindam Shang, Dashan Chen, Xiaoming Wang, Zhongrui Department of Electrical and Electronic Engineering The University of Hong Kong Hong Kong Access - Ai Chip Center for Emerging Smart Systems InnoHK Centers Hong Kong Science Park Hong Kong Institute of Computing Technology Chinese Academy of Sciences Beijing China Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing China Department of Electrical Engineering City University of HongKong Hong Kong
Deep neural networks (DNNs), such as the widely-used GPT-3 with billions of parameters, are often kept secret due to high training costs and privacy concerns surrounding the data used to train them. Previous approache... 详细信息
来源: 评论
Trigger mechanism of PDSOI NMOS devices for ESD protection operating under elevated temperatures
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Chinese Physics B 2021年 第7期30卷 613-618页
作者: Jia-Xin Wang Xiao-Jing Li Fa-Zhan Zhao Chuan-Bin Zeng Duo-Li Li Lin-Chun Gao Jiang-Jiang Li Bo Li Zheng-Sheng Han Jia-Jun Luo Institute of Microelectronics Chinese Academy of SciencesBeijing 100029China Key Laboratory of Science and Technology on Silicon Devices Chinese Academy of SciencesBeijing 100029China University of Chinese Academy of Sciences Beijing 100029China
Trigger characteristics of electrostatic discharge(ESD)protecting devices operating under various ambient temperatures ranging from 30℃to 195℃are *** studied ESD protecting devices are the H-gate NMOS transistors fa... 详细信息
来源: 评论