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2023 IEEE MTT-S International Wireless Symposium, IWS 2023

作者： Liu, Tong Dai, Zhou Qin, Haoran Zhang, Tiancheng Bao, Huaguang Zhou, Yinghui Sun, Zheng Ding, Dazhi School of Microelectronics Nanjing University of Science and Technology Nanjing210094 China Nanjing Electronic Devices Institute Nanjing210016 China Army Engineering University National Key Laboratory on Electromagnetic Environmental Effects and Electro-optical Engineering Nanjing210007 China

ISBN: (纸本)9798350336535

The plasma limiter can reflect and absorb the high-power microwave to protect the electronic systems. In this paper, a coupled multi-physics model based on the wave equation and electron hydrodynamic equation is proposed and the response properties of the plasma limiter under high power microwave radiation are analyzed using the spectral element time domain (SETD) method. The superiority of the transient fully coupled analysis under high power microwaves is demonstrated by comparison with COMSOL. © 2023 IEEE.

关键词： Transient analysis

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Impact of O_(2)post oxidation annealing on the reliability of SiC/SiO_(2)MOS capacitors

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Chinese Physics B 2021年第7期30卷 461-466页

作者： Peng Liu Ji-Long Hao Sheng-Kai Wang Nan-Nan You Qin-Yu Hu Qian Zhang Yun Bai Xin-Yu Liu Key Laboratory of Microelectronics Devices&Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China University of Chinese Academy of Sciences Beijing 100049China High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China

The effects of dry O_(2)post oxidation annealing(POA)at different temperatures on SiC/SiO_(2)stacks are comparatively studied in this *** results show interface trap density(Dit)of SiC/SiO_(2)stacks,leakage current density(Jg),and time-dependent dielectric breakdown(TDDB)characteristics of the oxide,are affected by POA temperature and are closely ***,Dit,Jg,and inverse median lifetime of TDDB have the same trend against POA temperature,which is instructive for SiC/SiO_(2)interface quality ***,area dependence of TDDB characteristics for gate oxide on SiC shows different electrode areas lead to same slope of TDDB Weibull curves.

关键词： SiC O_(2)post oxidation annealing interface traps MOS

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A Novel Monolithic integration Of HEMT And Micro-LED Performing As A Photodetector 20

A Novel Monolithic Integration Of HEMT And Micro-LED Perform...

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20th China International Forum on Solid State Lighting and 9th International Forum on Wide Bandgap Semiconductors, SSLCHINA: IFWS 2023

作者： Wang, Haoyu Gao, Yuan Li, Yi Ren, Kailin Yin, Luqiao Zhang, Jianhua School of Microelectronics Shanghai University Shanghai200444 China Shanghai University Shanghai Key Laboratory of Chips and Systems for Intelligent Connected Vehicle Shanghai200444 China Shanghai Collaborative Innovation Center of Intelligent Sensing Chip Technology Shanghai University Shanghai200444 China Shanghai University New Display Technology and Application Integration Laboratory Shanghai200444 China

ISBN: (纸本)9798350385373

Micro light-emitting diode (LED (LED) is considered as a promising next-generation display technology, owing to its superior performances such as high efficiency and fast response. Although GaN-based Micro-LED is mainly used as a light source, it can be utilized as a photodetector as well due to its crystal structure and material properties. This dual function enables Micro-LED to realize the monolithic integration of light source and photodetector, making it advantageous in visible light communication (VLC) applications. In this paper, a new monolithic integrated device of GaN-based high electron mobility transistor (HEMT) and Micro-LED is proposed by merging the features of HEMT and LED epitaxy without selective epitaxial growth, to integrate driving transistor and Micro- led on the same substrate. In this paper, the integrated HEMT-LED structure was tested as an optical detector under the wavelength of 365nm, 395nm and 425nm and the optical current at different light intensities. The response rate and bright/dark current ratio were derived. At the wavelength of 365 nm, the light intensity reaches its maximum value of 4.06 × 10-4 mW/cm2, and a peak responsivity of 7000 A/W is obtained. This work provides a promising solution for the future exploration of the device structure design of monolithic integration of light source and optical detector in VLC systems. © 2023 IEEE.

关键词： Light emitting diodes

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180nm BCD technology Platform with 8V to 65V Isolated LDMOS 17

180nm BCD Technology Platform with 8V to 65V Isolated LDMOS

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17th IEEE International Conference on Solid-State and Integrated Circuit technology, ICSICT 2024

作者： Ding, Qi Li, Renxiong Ning, Ning Huang, Jun Guo, Yutuo Wang, Yu He, Kunqin Liu, Yaxin Wang, Huaishan Tang, Juan Huo, Qiuyue Yuan, Minghong Peng, Pan Qiao, Ming Peng, Lulu Zhang, Bo United Microelectronics Center Co. Ltd Chongqing China University of Electronic Science and Technology of China State Key Laboratory of Electronic Thin Films and Integrated Devices Chengdu China Institute of Electronic and Information Engineering UESTC in Guangdong Dongguan China Shenzhen Institute for Advanced Study University of Electronic Science and Technology of China Shenzhen China

This work presents a 180nm BCD technology platform with 1.8V/5V CMOS, BJT, 8-65V isolated LDMOS (Lateral Double-Diffused MOSFET) and other devices such as diodes, resistors, capacitors etc., which possesses competitiv... 详细信息

ISBN: (纸本)9798350361834

关键词： MOSFET devices

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Lightning Protection Stacked TVS Structure Based on a Novel Total-Ionizing-Dose Radiation-Hardened technology 17

Lightning Protection Stacked TVS Structure Based on a Novel ...

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17th IEEE International Conference on Solid-State and Integrated Circuit technology, ICSICT 2024

作者： Qi, Zhao Chen, Hongquan Jia, Yirui He, Nailong Zhang, Zhili Zhang, Sen Qiao, Ming Zhang, Bo Chongqing Institute of Microelectronics Industry Technology UESTC Chongqing China CSMC Technologies Corporation Wuxi China University of Electronic Science and Technology of China State Key Laboratory of Electronic Thin Films and Integrated Devices Chengdu China Institute of Electronic and Information Engineering of UESTC in Guangdong Dongguan China Shenzhen Institute for Advanced Study UESTC Shenzhen China

ISBN: (纸本)9798350361834

To mitigate the total ionizing dose (TID) effects of the transient voltage suppressor (TVS), a novel radiation-hardened technology that includes hardening process with oxide etch-back technology and low-voltage (LV) stacked TVS structure is proposed. In this work, the high breakdown voltage (BV) is achieved by employing a series of LV devices to replace sensitive low concentration drift-region in traditional high voltage devices. Furthermore, a novel low-trap-density oxide layer is developed by the high-temperature local oxidation of silicon (LOCOS) etch-back technology and subsequently low-temperature secondary thin oxidation, which greatly reduces the density of hole traps. By combining these two improvements, the TID-hardened lateral TVS with ultra-low clamping voltage (V CL ) and high transient power density for three voltage levels are achieved. © 2024 IEEE.

关键词： Hole traps

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High quality 6-inch single-crystalline AlN template for E-mode HEMT power device

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Journal of Semiconductors 2025年第3期46卷 96-101页

作者： Zhiwen Liang Shangfeng Liu Ye Yuan Tongxin Lu Xiaopeng Li Zirong Wang Neng Zhang Tai Li Xiangdong Li Qi Wang Shengqiang Zhou Kai Kang Jincheng Zhang Yue Hao Xinqiang Wang Songshan Lake Materials Laboratory Dongguan 523808China Guangzhou Wide Bandgap Semiconductor Innovation Center Guangzhou Institute of TechnologyXidian UniversityGuangzhou 510555China School of Physical Sciences Great Bay UniversityDongguan 523808China Helmholtz-Zentrum Dresden-Rossendorf Institute of Ion Beam Physics and Materials ResearchBautzner Landstrasse 40001328DresdenGermany Dongguan Institute of Opto-Electronics Peking University Dongguan 523808China Sinopatt.Technology Co. LtdSongshan LakeDongguan 523808China State Key Laboratory of Artificial Microstructure and Mesoscopic Physics School of PhysicsNan-oOptoelectronics Frontier Center of Ministry of Education(NFC-MOE)Peking UniversityBeijing 100871China State Key Laboratory of Wide Bandgap Semiconductor Devices and Integrated Technology School of MicroelectronicsXidian UniversityXi’an 710071China

In the present work,the high uniform 6-inch single-crystalline AlN template is successfully achieved by high temperature annealing technique,which opens up the path towards industrial application in power ***,the outstanding crystalline-quality is confirmed by Rutherford backscattering spectrometry(RBS).In accompanied with the results from X-ray diffraction,the RBS results along both[0001]and[1213]reveal that the in-plane lattice is effectively reordered by high temperature *** addition,the constantΦ_(epi)angle between[0001]and[1213]at different depths of 31.54°confirms the uniform compressive strain inside the AlN *** from the excellent crystalline quality of AlN template,we can epitaxially grow the enhanced-mode high electron mobility transistor(HEMT)with a graded AlGaN buffer as thin as only~300 *** an ultra-thin AlGaN buffer layer results in the wafer-bow as low as 18.1μm in 6-inch wafer *** fabricated HEMT devices with 16μm-L_(GD)exhibits a threshold voltage(V_(TH))of 1.1 V and a high OFF-state breakdown voltage(V_(BD))over 1400 ***,after 200 V high-voltage OFF-state stress,the current collapse is only 13.6%.Therefore,the advantages of both 6-inch size and excellent crystallinity announces the superiority of single-crystalline AlN template in low-cost electrical power applications.

关键词： single-crystalline allium nitride template E-mode HEMT

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Microscopic mechanism of imprint in hafnium oxide-based ferroelectrics

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Nano Research 2022年第4期15卷 3667-3674页

作者： Peng Yuan Ge-Qi Mao Yan Cheng Kan-Hao Xue Yunzhe Zheng Yang Yang Pengfei Jiang Yannan Xu Yuan Wang Yuhao Wang Yaxin Ding Yuting Chen Zhiwei Dang Lu Tai Tiancheng Gong Qing Luo Xiangshui Miao Qi Liu Key Laboratory of Microelectronic Devices and Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesNo.3Beitucheng West RoadBeijing 100029China University of Chinese Academy of Sciences 19 Yuquan RoadBeijing 100049China School of Integrated Circuits School of Optical and Electronic InformationHuazhong University of Science and Technology1037 Luoyu RoadWuhan 430074China Key Laboratory of Polar Materials and Devices(MOE) Department of ElectronicsEast China Normal University100 Guilin RoadShanghai 430079China Department of Mathematics and Theories Peng Cheng LaboratoryNo.2Xingke 1st StreetShenzhen 518055China

Hafnia-based ferroelectrics have greatly revived the field of ferroelectric memory(FeRAM),but certain reliability issues must be satisfactorily resolved before they can be widely applied in commercial *** particular,the imprint phenomenon severely jeopardizes the read-out reliability in hafnia-based ferroelectric capacitors,but its origin remains unclear,which hinders the development of its recovery *** this work,we have systematically investigated the imprint mechanism in TiN/Hf_(0.5)Zr_(0.5)O_(2)(HZO)/TiN ferroelectric capacitors using experiments and first-principles *** is shown that carrier injection-induced charged oxygen vacancies are at the heart of imprint in HZO,where other mechanisms such as domain pinning and dead layer are less *** imprint model based on electron de-trapping from oxygen vacancy sites has been proposed that can satisfactorily explain several experimental facts such as the strong asymmetric imprint,leakage current variation,and so *** on this model,an effective imprint recovery method has been proposed,which utilizes unipolar rather than bipolar voltage *** remarkable recovery performances demonstrate the prospect of improved device reliability in hafnia-based FeRAM devices.

关键词： hafnia-based ferroelectric imprint build-in electric field oxygen vacancy recovery

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High-spatiotemporal-resolution chip analysis using a fiber-coupled quantum sensor based on diamond N-V centers

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Physical Review Applied 2025年第2期23卷 024050-024050页

作者： Youwei Liu Fazhan Zhao Jing Li Zhenfeng Li Lei Wang Bo Li Key Laboratory of Science and Technology on Silicon Devices Institute of Microelectronics Chinese Academy of Sciences 100029 Beijing China School of Integrated Circuits University of Chinese Academy of Sciences 101408 Beijing China Communication and Information Engineering Center Institute of Microelectronics Chinese Academy of Sciences 100029 Beijing China

We propose a chip analysis method using a fiber-optic quantum sensor based on diamond nitrogen-vacancy (N-V) centers to capture the magnetic field associated with short-pulse currents in chips. The fiber-coupled diamond N-V sensor was precisely positioned at the target region of the chip. We performed real-time monitoring of the N-V center fluorescence responses to pulsing magnetic fields generated by the pulse signals in the test chip through continuous-wave optically detected magnetic resonance. This allowed the accurate reconstruction of the chip internal node signal variations. We successfully achieved a time resolution of 200 ns, which was consistent with the metastable state lifetime of the N-V centers at room temperature. Furthermore, we evaluated the shot noise–limited magnetic sensitivity, which was found to be 6.3nT/Hz1/2. The proposed system exhibited swift responsivity to short pulse currents in the chip, providing highly accurate spatial localization of magnetic field variations. It satisfied the demand for rapid response and precise positioning in chip testing. Overall, this study validates the potential application of N-V centers in the domain of chip security analysis, offering a solution for chip diagnostics.

关键词： Quantum optics

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Comparative Study on Degradation of the TFET and MOSFET 16

Comparative Study on Degradation of the TFET and MOSFET

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16th IEEE International Conference on Solid-State and Integrated Circuit technology, ICSICT 2022

作者： Sun, Jiale Zhang, Yuming Lu, Hongliang Lyu, Zhijun Zhu, Yi Pan, Yuche Xidian University The Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices Xi'an710071 China Institute of Microelectronics Technology The Department of Integrated Circuit Design Xi'an710004 China

ISBN: (数字)9781665469067

ISBN: (纸本)9781665469067

This paper compares the characteristics of MOSFET and TFET devices fabricated under the same process conditions. From the experimental results, it can be seen that after a period of degradation, the interface state density of the device increases, and the on-state current has a small increase, but the off state current of the TFET has the degradation obviously. The subthreshold swing also increases significantly with the device interface state degradation. The increase of off-state current and the degradation of subthreshold swing are extremely unfavorable for the application of TFET, and optimization is required to prevent the problems such as device failure. © 2022 IEEE.

关键词： Interface states

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Experimental Investigation of Ultra-Low Temperature LA2O3/HFO2Bi-Layer Dipole-First Process Using PVD Method for Advanced IC technology

Experimental Investigation of Ultra-Low Temperature LA2O3/HF...

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2023 China Semiconductor technology International Conference, CSTIC 2023

作者： Wei, Yanzhao Yao, Jiaxin Xu, Renren Zhang, Qingzhu Yin, Huaxiang Chinese Academy of Sciences Integrated Circuit Advanced Process R&d Center Institute of Microelectronics Beijing100029 China Institute of Microelectronics Chinese Academy of Sciences Key Laboratory of Microelectronic Devices and Integrated Technology Beijing100029 China University of Chinese Academy of Sciences School of Integrated Circuits Beijing100049 China

ISBN: (纸本)9798350311006

In this paper, a La2O3/HfO2 bi-layer dipole-first (DF) process is proposed and investigated by ultra-low temperature PVD dielectric laminates to achieve lower gate effective work function (EWF) for monolithic 3D-IC (M3D) application. The impacts of ultra-low temperature La-dipole on EWF modulation and interfacial properties are comprehensively investigated. It is found that the flat-band voltage (VFB) negatively shifts 60 mV with sub-1nm La2O3 thickness, which provides an effective way to meet the require of Si conduction band-edge EWF modulation. Furthermore, the electron trap/detrap densities (Not) and interfacial trap densities (Dit) are suppressed by La2O3/HfO2 bi-layer DF process to improve device performance. These results exhibit a promising bi-layer DF process in low thermal integration for advanced IC technology. © 2023 IEEE.

关键词： Timing circuits

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