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检索条件"机构=Key Laboratory of Microelectronics Devices and Integration Technology"
1308 条 记 录,以下是211-220 订阅
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Transient Analysis of Plasma Limiter Using the SETD method with a Multi-Physics Model
Transient Analysis of Plasma Limiter Using the SETD method w...
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2023 IEEE MTT-S International Wireless Symposium, IWS 2023
作者: Liu, Tong Dai, Zhou Qin, Haoran Zhang, Tiancheng Bao, Huaguang Zhou, Yinghui Sun, Zheng Ding, Dazhi School of Microelectronics Nanjing University of Science and Technology Nanjing210094 China Nanjing Electronic Devices Institute Nanjing210016 China Army Engineering University National Key Laboratory on Electromagnetic Environmental Effects and Electro-optical Engineering Nanjing210007 China
The plasma limiter can reflect and absorb the high-power microwave to protect the electronic systems. In this paper, a coupled multi-physics model based on the wave equation and electron hydrodynamic equation is propo... 详细信息
来源: 评论
Impact of O_(2)post oxidation annealing on the reliability of SiC/SiO_(2)MOS capacitors
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Chinese Physics B 2021年 第7期30卷 461-466页
作者: Peng Liu Ji-Long Hao Sheng-Kai Wang Nan-Nan You Qin-Yu Hu Qian Zhang Yun Bai Xin-Yu Liu Key Laboratory of Microelectronics Devices&Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China University of Chinese Academy of Sciences Beijing 100049China High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China
The effects of dry O_(2)post oxidation annealing(POA)at different temperatures on SiC/SiO_(2)stacks are comparatively studied in this *** results show interface trap density(Dit)of SiC/SiO_(2)stacks,leakage current de... 详细信息
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A Novel Monolithic integration Of HEMT And Micro-LED Performing As A Photodetector  20
A Novel Monolithic Integration Of HEMT And Micro-LED Perform...
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20th China International Forum on Solid State Lighting and 9th International Forum on Wide Bandgap Semiconductors, SSLCHINA: IFWS 2023
作者: Wang, Haoyu Gao, Yuan Li, Yi Ren, Kailin Yin, Luqiao Zhang, Jianhua School of Microelectronics Shanghai University Shanghai200444 China Shanghai University Shanghai Key Laboratory of Chips and Systems for Intelligent Connected Vehicle Shanghai200444 China Shanghai Collaborative Innovation Center of Intelligent Sensing Chip Technology Shanghai University Shanghai200444 China Shanghai University New Display Technology and Application Integration Laboratory Shanghai200444 China
Micro light-emitting diode (LED (LED) is considered as a promising next-generation display technology, owing to its superior performances such as high efficiency and fast response. Although GaN-based Micro-LED is main... 详细信息
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180nm BCD technology Platform with 8V to 65V Isolated LDMOS  17
180nm BCD Technology Platform with 8V to 65V Isolated LDMOS
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17th IEEE International Conference on Solid-State and Integrated Circuit technology, ICSICT 2024
作者: Ding, Qi Li, Renxiong Ning, Ning Huang, Jun Guo, Yutuo Wang, Yu He, Kunqin Liu, Yaxin Wang, Huaishan Tang, Juan Huo, Qiuyue Yuan, Minghong Peng, Pan Qiao, Ming Peng, Lulu Zhang, Bo United Microelectronics Center Co. Ltd Chongqing China University of Electronic Science and Technology of China State Key Laboratory of Electronic Thin Films and Integrated Devices Chengdu China Institute of Electronic and Information Engineering UESTC in Guangdong Dongguan China Shenzhen Institute for Advanced Study University of Electronic Science and Technology of China Shenzhen China
This work presents a 180nm BCD technology platform with 1.8V/5V CMOS, BJT, 8-65V isolated LDMOS (Lateral Double-Diffused MOSFET) and other devices such as diodes, resistors, capacitors etc., which possesses competitiv... 详细信息
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Lightning Protection Stacked TVS Structure Based on a Novel Total-Ionizing-Dose Radiation-Hardened technology  17
Lightning Protection Stacked TVS Structure Based on a Novel ...
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17th IEEE International Conference on Solid-State and Integrated Circuit technology, ICSICT 2024
作者: Qi, Zhao Chen, Hongquan Jia, Yirui He, Nailong Zhang, Zhili Zhang, Sen Qiao, Ming Zhang, Bo Chongqing Institute of Microelectronics Industry Technology UESTC Chongqing China CSMC Technologies Corporation Wuxi China University of Electronic Science and Technology of China State Key Laboratory of Electronic Thin Films and Integrated Devices Chengdu China Institute of Electronic and Information Engineering of UESTC in Guangdong Dongguan China Shenzhen Institute for Advanced Study UESTC Shenzhen China
To mitigate the total ionizing dose (TID) effects of the transient voltage suppressor (TVS), a novel radiation-hardened technology that includes hardening process with oxide etch-back technology and low-voltage (LV) s... 详细信息
来源: 评论
High quality 6-inch single-crystalline AlN template for E-mode HEMT power device
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Journal of Semiconductors 2025年 第3期46卷 96-101页
作者: Zhiwen Liang Shangfeng Liu Ye Yuan Tongxin Lu Xiaopeng Li Zirong Wang Neng Zhang Tai Li Xiangdong Li Qi Wang Shengqiang Zhou Kai Kang Jincheng Zhang Yue Hao Xinqiang Wang Songshan Lake Materials Laboratory Dongguan 523808China Guangzhou Wide Bandgap Semiconductor Innovation Center Guangzhou Institute of TechnologyXidian UniversityGuangzhou 510555China School of Physical Sciences Great Bay UniversityDongguan 523808China Helmholtz-Zentrum Dresden-Rossendorf Institute of Ion Beam Physics and Materials ResearchBautzner Landstrasse 40001328DresdenGermany Dongguan Institute of Opto-Electronics Peking University Dongguan 523808China Sinopatt.Technology Co. LtdSongshan LakeDongguan 523808China State Key Laboratory of Artificial Microstructure and Mesoscopic Physics School of PhysicsNan-oOptoelectronics Frontier Center of Ministry of Education(NFC-MOE)Peking UniversityBeijing 100871China State Key Laboratory of Wide Bandgap Semiconductor Devices and Integrated Technology School of MicroelectronicsXidian UniversityXi’an 710071China
In the present work,the high uniform 6-inch single-crystalline AlN template is successfully achieved by high temperature annealing technique,which opens up the path towards industrial application in power ***,the outs... 详细信息
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Microscopic mechanism of imprint in hafnium oxide-based ferroelectrics
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Nano Research 2022年 第4期15卷 3667-3674页
作者: Peng Yuan Ge-Qi Mao Yan Cheng Kan-Hao Xue Yunzhe Zheng Yang Yang Pengfei Jiang Yannan Xu Yuan Wang Yuhao Wang Yaxin Ding Yuting Chen Zhiwei Dang Lu Tai Tiancheng Gong Qing Luo Xiangshui Miao Qi Liu Key Laboratory of Microelectronic Devices and Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesNo.3Beitucheng West RoadBeijing 100029China University of Chinese Academy of Sciences 19 Yuquan RoadBeijing 100049China School of Integrated Circuits School of Optical and Electronic InformationHuazhong University of Science and Technology1037 Luoyu RoadWuhan 430074China Key Laboratory of Polar Materials and Devices(MOE) Department of ElectronicsEast China Normal University100 Guilin RoadShanghai 430079China Department of Mathematics and Theories Peng Cheng LaboratoryNo.2Xingke 1st StreetShenzhen 518055China
Hafnia-based ferroelectrics have greatly revived the field of ferroelectric memory(FeRAM),but certain reliability issues must be satisfactorily resolved before they can be widely applied in commercial *** particular,t... 详细信息
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High-spatiotemporal-resolution chip analysis using a fiber-coupled quantum sensor based on diamond N-V centers
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Physical Review Applied 2025年 第2期23卷 024050-024050页
作者: Youwei Liu Fazhan Zhao Jing Li Zhenfeng Li Lei Wang Bo Li Key Laboratory of Science and Technology on Silicon Devices Institute of Microelectronics Chinese Academy of Sciences 100029 Beijing China School of Integrated Circuits University of Chinese Academy of Sciences 101408 Beijing China Communication and Information Engineering Center Institute of Microelectronics Chinese Academy of Sciences 100029 Beijing China
We propose a chip analysis method using a fiber-optic quantum sensor based on diamond nitrogen-vacancy (N-V) centers to capture the magnetic field associated with short-pulse currents in chips. The fiber-coupled diamo... 详细信息
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Comparative Study on Degradation of the TFET and MOSFET  16
Comparative Study on Degradation of the TFET and MOSFET
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16th IEEE International Conference on Solid-State and Integrated Circuit technology, ICSICT 2022
作者: Sun, Jiale Zhang, Yuming Lu, Hongliang Lyu, Zhijun Zhu, Yi Pan, Yuche Xidian University The Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices Xi'an710071 China Institute of Microelectronics Technology The Department of Integrated Circuit Design Xi'an710004 China
This paper compares the characteristics of MOSFET and TFET devices fabricated under the same process conditions. From the experimental results, it can be seen that after a period of degradation, the interface state de... 详细信息
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Experimental Investigation of Ultra-Low Temperature LA2O3/HFO2Bi-Layer Dipole-First Process Using PVD Method for Advanced IC technology
Experimental Investigation of Ultra-Low Temperature LA2O3/HF...
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2023 China Semiconductor technology International Conference, CSTIC 2023
作者: Wei, Yanzhao Yao, Jiaxin Xu, Renren Zhang, Qingzhu Yin, Huaxiang Chinese Academy of Sciences Integrated Circuit Advanced Process R&d Center Institute of Microelectronics Beijing100029 China Institute of Microelectronics Chinese Academy of Sciences Key Laboratory of Microelectronic Devices and Integrated Technology Beijing100029 China University of Chinese Academy of Sciences School of Integrated Circuits Beijing100049 China
In this paper, a La2O3/HfO2 bi-layer dipole-first (DF) process is proposed and investigated by ultra-low temperature PVD dielectric laminates to achieve lower gate effective work function (EWF) for monolithic 3D-IC (M... 详细信息
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