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Electronic transport properties of an (8,0) carbon/silicon-carbide nanotube heterojunction

Journal of Semiconductors 2009年第5期30卷 5-8页

作者：刘红霞张鹤鸣张志勇 Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices School of MicroelectronicsXidian University Institute of Information Science and Technology Northwest University

A two-probe system of the heterojunction formed by an （8, 0） carbon nanotube （CNT） and an （8, 0） silicon carbide nanotube （SiCNT） was established based on its optimized structure. By using a method combining nonequilibrium Green＇s function （NEGF） with density functional theory （DFF）, the transport properties of the het-erojunction were investigated. Our study reveals that the highest occupied molecular orbital （HOMO） has a higher electron density on the CNT section and the lowest unoccupied molecular orbital （LUMO） mainly concentrates on the interface and the SiCNT section. The positive and negative threshold voltages are ＋1.8 and -2.2 V, respectively.

关键词： carbon/silicon carbide nanotube heterojunction nonequilibrium Green＇s function transport properties

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Design and research of normally-offβ-Ga_(2)O_(3)/4H-SiC heterojunction field effect transistor

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Chinese Physics B 2023年第3期32卷 461-466页

作者：程梅霞栾苏珍王海林贾仁需 The Key Laboratory of Heterogeneous Network Convergence Communication Xi'an University of Science and TechnologyXi'an 710600China The Key Laboratory of Wide Band Gap Semiconductor Materials and Devices School of MicroelectronicsXidian UniversityXi'an 710071China

Ga_(2)O_(3)is difficult to achieve p-type doping,which further hinders the development of Ga_(2)O_(3)-based power devices and is not conducive to the development of new devices with high power density and low power *** paper expounds aβ-Ga_(2)O_(3)/4H-SiC heterojunction lateral metal–oxide–semiconductor field-effect transistor(HJFET),which can make better use of the characteristics of PN junction by adding p-doped SiC in the channel *** with the conventional devices,the threshold voltage of the heterojunction metal–oxide–semiconductor field-effect transistor(MOSFET)is greatly improved,and normally-off operation is realized,showing a positive threshold voltage of 0.82 ***,the off-state breakdown voltage of the device is up to 1817 V,and the maximum transconductance is 15.3 mS/*** optimal PFOM is obtained by simulating the thickness,length and doping of the SiC in each region of the epitaxial *** structure provides a feasible idea for high performanceβ-Ga_(2)O_(3)MOSFET.

关键词： MOSFET heterojunction threshold voltage

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Electronic transport properties of an(8,0) carbon/boron nitride nanotube heterojunction

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Chinese Physics B 2010年第3期19卷 445-449页

作者：刘红霞张鹤鸣宋久旭张志勇 Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices School of Microelectronics Xidian University Information Science and Technology Institution Northwest University

The structure of a heterojunction made up of an （8, 0） carbon nanotube and an （8, 0） boron nitride nanotube is achieved through geometry optimization implemented in the CASTEP package. Based on the optimized geometry, the model of the heterojunction is established. Its transport properties are investigated by combining the nonequilibrium Green＇s function with density functional theory. Results show that both the lowest unoccupied molecular orbital and the highest occupied molecular orbital mainly locate on the carbon nanotube section. In the current-voltage characteristic of the heterojunction, a rectification feature is revealed.

关键词： nanotube heterojunction nonequilibrium Green＇s function transport properties

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A 6-bit 3-Gsps ADC implemented in 1μ m GaAs HBT technology

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Journal of Semiconductors 2014年第8期35卷 145-150页

作者：张金灿张玉明吕红亮张义门肖广兴叶桂平 School of Microelectronics Xidian University Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices Electrical Engineering College Henan University of Science and Technology

The design and test results of a 6-bit 3-Gsps analog-to-digital converter （ADC） using 1 μm GaAs het- erojunction bipolar transistor （HBT） technology are presented. The monolithic folding-interpolating ADC makes use of a track-and-hold amplifier （THA） with a highly linear input buffer to maintain a highly effective number of bits （ENOB）. The ADC occupies an area of 4.32 × 3.66 mm2 and achieves 5.53 ENOB with an effective resolution bandwidth of 1.l GHz at a sampling rate of 3 Gsps. The maximum DNL and INL are 0.36 LSB and 0.48 LSB, respectively.

关键词： analog-to-digital converter GaAs HBT folding interpolating

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Epitaxial growth of MOCVD-derived YBCO films by modulation of Cu(tmhd)_2 concentration

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Rare Metals 2014年第1期33卷 70-74页

作者： Jie Xiong Fei Zhang Xin Liu Rui-Peng Zhao Xiao-Hui Zhao Bo-Wan Tao School of Microelectronics and Solid-State Electronics University of Electronic Science and Technology of China State Key Laboratory of Electronic Thin Film and Integrated Devices University of Electronic Science and Technology of China

Metal-organic chemical vapor deposition was applied to fabricate YBa2Cu3OT-a （YBCO） films on singlecrystal LaA103 （001） substrates for its high deposition rate, easy adjustment on film composition, and low requirement on vacuum apparatus. The effects of Cu（tmhd）2 concentra- tion in the precursor on the properties of YBCO films were systematically investigated. X-ray diffraction （XRD） reveals that the mole ratio of Cu/Ba in the precursor from 0.77 to 0.97 is helpful to improve the crystallization and out-of-plane orientation of YBCO films; however, it hardly affects the inplane texture. Scanning electron microscope （SEM） shows the dense, crack-free but rough surface, on which there are Cu-O and Ba-Cu-O outgrowths identified by energy-dispersive spectrometer （EDS）. As the mole ratio of Cu/Ba increasing, the average size of Ba-Cu-O precipitates keeps increasing and the film composition becomes inhomoge- neous at the mole ratio of Cu/Ba of 0.97. The 250 nm thick YBCO film prepared at the mole ratio of Cu/Ba of 0.91 shows the critical current density （Jc） of 4.0 ***-2 （77 K, 0 T）.

关键词： MOCVD YBCO Cu（tmhd）2 concentration Cu/Ba ratio

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AlN-based surface acoustic wave resonators on platinum bottom electrodes for high-temperature sensing applications

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Rare Metals 2016年第5期35卷 408-411页

作者： Chuan Li Xing-Zhao Liu Bin Peng Lin Shu Yan-Rong Li School of Microelectronics and Solid-State Electronics University of Electronic Science and Technology of China State Key Laboratory of Electronic Thin Film and Integrated Devices University of Electronic Science and Technology of China

Surface acoustic wave（SAW） resonators with Pt/AlN/Si and Pt/AlN/Pt/Si configurations were fabricated by lift-off photolithography techniques. High-temperature performances of both configurations were investigated for temperature sensor applications. AlN films grown on Ptcoated Si substrates exhibit a lower（002） preferred orientation than those grown on Si substrates. The center frequencies of Pt/AlN/Si and Pt/AlN/Pt/Si configurations at room temperature are 424.1 and 456.4 MHz, *** SAW was limited by Pt bottom electrodes to propagate in AlN layer. The temperature coefficient of frequency（TCF） values of Pt/AlN/Si and Pt/AlN/Pt/Si configurations are-51.6 × 10^-6 and-69.2 × 10^-6℃^-1, *** with that of Pt/AlN/Si configuration, the TCF value of Pt/AlN/Pt/Si configuration decreases by 34.1 %.AlN resonator with the Pt floating bottom electrodes provides a large, quasi-constant temperature sensitivity which is suitable for temperature sensor applications.

关键词： AlN film High temperature Platinum Temperature coefficient of frequency Surface acoustic wave

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Polymer assisted thick single-layer YBa_2Cu_3O_(7-δ)films prepared with modified TFA-MOD method

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Rare Metals 2014年第5期33卷 594-597页

作者： Pei Guo Xiao-Hui Zhao Jie Xiong Xing-Zhao Liu Bo-Wan Tao School of Microelectronics and Solid-State Electronics University of Electronic Science and Technology of China State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China

Single-layer YBa2Cu3O7-δ（YBCO） films with the thickness of over 600 nm were fabricated by modified metal organic deposition using trifluoroacetate metal organic deposition（TFA-MOD） method on LaAlO3（LAO） substrates. Polyvinylbutyral（PVB） was added into the precursor solution to enhance the thickness of the single layer. The pyrolysis process was shortened to about 3 h due to the reduction of the fluorine content in the precursor *** effects of heating rate during the crystallization process on the microstructure and Jcvalues of YBCO films were investigated. The α-axis-oriented YBCO crystals dominate when the heating rate is lower than 20 °C·min^-1, while faster heating rate of 43 °C·min^-1 results in pure c-axis epitaxial growth. The Jcvalues of YBCO films increase linearly with heating rate increasing due to the increase of c-axis YBCO growth, and the critical current（Ic） value of 100 A·cm^-1 within a single-layer YBCO film is achieved.

关键词： Trifluoroacetate metal-organic deposition YBa2Cu3O7-δ Polyvinylbutyral Heating rate

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Channel Hot-Carrier degradation characteristics and trap activities of high-k/metal gate nMOSFETs

Channel Hot-Carrier degradation characteristics and trap act...

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2013 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2013

作者： Luo, Weichun Yang, Hong Wang, Wenwu Xu, Hao Ren, Shangqing Tang, Bo Tang, Zhaoyun Xu, Jing Yan, Jiang Zhao, Chao Chen, Dapeng Ye, Tianchun Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences China

ISBN: (纸本)9781479912414

In this paper, the Hot-Carrier (HC) degradation characteristics and mechanisms of nMOSFETs with high-k/metal gate (HK/MG) structure are systematically investigated. The Idsat shift under different Vd states obeys power-law of Vg stress time, and the exponent of Vg stress time shifts from 0.5∼0.7 at low stress to 0.2∼0.3 at high stress, which is believed to be induced by different trap activities. There are two transitions in the curve of time to fail (TTF) and Vg stress, the 1st valley point is resulted from impact ionization, and the 2nd transition is attributed to the dominant roles exchange of the interface trap (Nit) and bulk trap (Not) in dielectric in degradation. © 2013 IEEE.

关键词： Impact ionization

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Simultaneous Measurement of Temperature and Salinity Based on GaN Monolithic devices

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IEEE Transactions on Instrumentation and Measurement 2025年

作者： Ye, Zhiyong Deng, Ganyuan Liu, Dongmiao Wang, Jingyan Gao, Xiaodi Li, Kwai Hei Zhu, Ling Shenzhen University College of Physics and Optoelectronic Engineering Shenzhen518060 China Southern University of Science and Technology School of Microelectronics Shenzhen518055 China State Key Laboratory of Radio Frequency Heterogeneous Integration Shenzhen University China Shenzhen University Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province College of Physics and Optoelectronic Engineering Shenzhen518060 China

Precise measurement of temperature and salinity is crucial for marine engineering, resource exploitation, and environmental protection. However, developing a compact device capable of simultaneously measuring both parameters remains a considerable challenge. This study presents a GaN monolithic device that integrates a light-emitting diode (LED) and a photodetector (PD) on a single GaN-on-sapphire chip. Increased salinity reduces the light transmitted to the PD through the sapphire waveguide, decreasing the photocurrent of the PD. Rising temperatures narrow the space charge region, lowering the forward voltage of the PD. Through a signal decoupling of the photocurrent and forward voltage using a linear matrix, salinity with a sensitivity of 0.634 μA/% within a range of 0–7 % and temperature with a sensitivity of 1.53 mV/°C within a range of 5–40 °C can be extracted. The potential applications of this device in practical seawater monitoring are also explored. © 1963-2012 IEEE.

关键词： Salinity measurement

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Time-dependent degradation of threshold voltage in AlGaN/GaN high electron mobility transistors

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Chinese Physics B 2014年第1期23卷 395-398页

作者：马晓华姜元祺王鑫华吕敏张霍陈伟伟刘新宇 School of Advanced Materials and Nanotechnology Xidian University Xi' an 710071 China Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices School of Microelectronics Xidian University Xi'an 71007 l China Key Laboratory of Microelectronics Device & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China

This paper gives a detailed analysis of the time-dependent degradation of the threshold voltage in AlGaN/GaN high electron mobility transistors(HEMTs) submitted to off-state stress. The threshold voltage shows a positive shift in the early stress, then turns to a negative shift. The negative shift of the threshold voltage seems to have a long recovery time. A model related with the balance of electron trapping and detrapping induced by shallow donors and deep acceptors is proposed to explain this degradation mode.

关键词： AlGaN/GaN high electron mobility transistor off-state stress electron detrapping degradation

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