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Effects of electrical stress on the characteristics and defect behaviors in GaN-based near-ultraviolet light emitting diodes

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Chinese Physics B 2022年第6期31卷 678-682页

作者： Ying-Zhe Wang Mao-Sen Wang Ning Hua Kai Chen Zhi-Min He Xue-Feng Zheng Pei-Xian Li Xiao-Hua Ma Li-Xin Guo Yue Hao Key Laboratory of Wide Bandgap Semiconductor Materials and Devices School of MicroelectronicsXidian UniversityXi’an 710071China Shanghai Aerospace Electronic Technology Institute Shanghai 201109China School of Advanced Materials and Nanotechnology Xidian UniversityXi’an 710071China School of Physics and Optoelectronic Engineering Xidian UniversityXi’an 710071China

The degradation mechanism of GaN-based near-ultraviolet(NUV,320-400 nm)light emitting diodes(LEDs)with low-indium content under electrical stress is studied from the aspect of defects.A decrease in the optical power and an increase in the leakage current are observed after electrical *** defect behaviors are characterized using deep level transient spectroscopy(DLTS)measurement under different filling pulse *** stress,the concentration of defects with the energy level of 0.47-0.56 eV increases,accompanied by decrease in the concentration of 0.72-0.84 eV *** the defect energy level with the increased yellow luminescence in photoluminescence spectra,the device degradation can be attributed to the activation of the gallium vacancy and oxygen related complex defect along dislocation,which was previously passivated with *** study reveals the evolution process of defects under electrical stress and their spatial location,laying a foundation for manufacture of GaN-based NUV LEDs with high reliability.

关键词： light emitting diodes GaN electrical stress defect

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Unveiling a giant electrocaloric effect at low electric fields through continuous phase transition design

Advanced Powder Materials

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Advanced Powder Materials 2024年第5期3卷 33-45页

作者： Yunyao Huang Leiyang Zhang Pingji Ge Ruiyi Jing Wenjing Shi Chao Li Xiang Niu Vladimir Shur Haibo Zhang Shengguo Lu Yintang Yang Dawei Wang Xiaoqin Ke Li Jin Electronic Materials Research Laboratory Key Laboratory of the Ministry of EducationSchool of Electronic Science and EngineeringFaculty of Electronic and Information EngineeringXi’an Jiaotong UniversityXi’an710049China School of Physics MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed MatterXi’an Jiaotong UniversityXi’an710049China Instrument Analysis Center Xi’an Jiaotong UniversityXi’an10049China Guangdong Provincial Research Center on Smart Materials and Energy Conversion Devices School of Materials and EnergyGuangdong University of TechnologyGuangzhou510006China School of Natural Sciences and Mathematics Ural Federal UniversityEkaterinburg20000Russia School of Materials Science and Engineering State Key Laboratory of Material Processing and Die&Mould TechnologyHuazhong University of Science and TechnologyWuhan430074China School of Microelectronics Xidian UniversityXi’an710071China Functional Materials and Acousto-Optic Instruments Institute School of Instrumentation Science and EngineeringHarbin Institute of TechnologyHarbin150080China

The reported electrocaloric(EC)effect in ferroelectrics is poised for application in the next generation of solidstate refrigeration technology,exhibiting substantial developmental *** study introduces a novel and efficient EC effect strategy in(1-x)Pb(Lu_(1/2)Nb_(1/2))O_(3)-xPbTiO_(3)(PLN-xPT)ceramics for low electric-fielddriven ***-field simulations provide fundamental insights into thermally induced continuous phase transitions,guiding subsequent experimental investigations.A comprehensive composition/temperature-driven phase evolution diagram is constructed,elucidating the sequential transformation from ferroelectric(FE)to antiferroelectric(AFE)and finally to paraelectric(PE)phases for x=0.10-0.18 *** measurements of EC performance highlight x=0.16 as an outstanding performer,exhibiting remarkable properties,including an adiabatic temperature change(ΔT)of 3.03 K,EC strength(ΔT/ΔE)of 0.08 K cm kV-1,and a temperature span(Tspan)of 31℃.The superior EC effect performance is attributed to the temperature-induced FE to AFE transition at low electric fields and diffusion phase transition behavior contributing to the wide *** work provides valuable insights into developing high-performance EC effect across broad temperature ranges through the strategic design of continuous phase transitions,offering a simplified and economical approach for advancing ecofriendly and efficient solid-state cooling technologies.

关键词： PbPb(Lu_(1/2)Nb_(1/2))O_(3)-xPbTiO_(3)(PLN-PT) Electrocaloric effect(ECE) Phase transition Low electric field Antiferroelectric

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Highly thermal conductivity flexible composite films based on alumina-boron nitride binary fillers

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Ceramics International 2025年

作者： Hu, Xin Sha, Xiaolu Zhao, Xinyu Li, Xin Gao, Wei Zhang, Kexiong Gao, Jinling Long, Ze Yu, Jinqiang Liang, Hongwei Yin, Hong State Key Laboratory of High Pressure and Superhard Materials College of Physics Jilin University Changchun130012 China School of Integrated Circuits Dalian University of Technology Dalian116024 China Dalian Key Laboratory of Wide Bandgap Semiconductor Devices Integration and System Dalian116024 China

Thermal interface materials (TIMs) exhibiting dual attributes of high thermal conductivity and excellent electrical insulation are urgently in demand for heat management of microelectronic devices. However, ultrahigh filler loadings that are often required for achieving high thermal conductivity would compromise the other properties such as softness and flowability of the composites. In this work, we present a straightforward and effective approach for highly thermally conductive polymer composites based on binary fillers of alumina (Al2O3) and boron nitride (BN) through a conventional hot-press method that is potential for the scalable production. Al2O3 and BN with different particle sizes and shapes are functionalized as binary fillers. By utilizing various gradation scheme based on Dinger-Funk particle stacking theory, the spherical Al2O3 composites achieve a thermal conductivity of 5.12 W m−1 K−1 with a maximum packing density. Further mixing with BN leads to flexible thin films with a remarkable thermal conductivity of 9.23 W m−1 K−1, which is ∼50 times that of pure silicon rubbers (0.18 W m−1 K−1). Meanwhile, the synthesized composites demonstrate electrically insulation, flexibility, compressibility, as well as remarkable stability even after cycled temperature shocks from room temperature to 120 °C, which are conducive to environmental adaptability for industrial applications. The results of this work offer a feasible strategy of synthesizing BN-based TIMs and pave the way for their large-scale practical implementation for effective thermal management. © 2025

关键词： Boron nitride

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Low palladium content CeO_(2)/ZnO composite for acetone sensor with sub-second response prepared by ultrasonic method

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Journal of Central South University 2024年第7期31卷 2137-2149页

作者： CHEN Xu-jie XING Qiao-ling TANG Xuan CAI Yong ZHANG Ming Hunan Provincial Key Laboratory of Low-dimensional Structural Physics&Devices School of Physics and ElectronicsHunan UniversityChangsha 410082China Changsha Semiconductor Technology and Application Innovation Research Institute College of Semiconductors(College of Integrated Circuits)Hunan UniversityChangsha 410082China School of Mechanical Engineering and Mechanics Xiangtan UniversityXiangtan 411105China Research Institute of Hunan University in Chongqing Chongqing 401120China Engineering Research Center of Advanced Semiconductor Technology and Application of Ministry of Education&Key Laboratory for Micro-/Nano-Optoelectronic Devices of Ministry of Education National Key Laboratory of Power Semiconductor and Integration TechnologyCollege of Semiconductors(College of Integrated Circuits)Hunan UniversityChangsha 410082China

In practical applications,noble metal doping is often used to prepare high performance gas sensors,but more noble metal doping will lead to higher preparation *** this study,CeO_(2)/ZnO-Pd with low palladium content was prepared by ultrasonic method with fast response and high selectivity for acetone *** the same amount of palladium added,the selectivity coefficient of CeO_(2)/ZnO-Pd is 1.88 times higher than that of the stirred *** with the pure PdO-doped CeO_(2)/ZnO-PdO material,the content of Pd in CeO_(2)/ZnO-PdO is about 30%of that in CeO_(2)/ZnO-PdO,but the selectivity coefficient for acetone is 2.56 times *** CeO_(2)/ZnO-Pd sensor has a higher response(22.54)to 50×10^(−6) acetone at 300℃and the selectivity coefficient is 2.57 times that of the CeO_(2)/ZnO *** sensor has a sub-second response time(0.6 s)and still has a 2.36 response to 330×10^(−9) of *** doping makes Pd particles smaller and increases the contact area with ***,the composition of n-p-n heterojunction and the synergistic effect of Pd/PdO improve the sensor *** shows that ultrasonic Pd doping provides a way to improve the utilization rate of doped metals and prepare highly selective gas sensors.

关键词： low palladium sub-second responce ultrasonic method acetone sensor heterojunction

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Higher order BIC of metasurface excited by magnetic EIT

Higher order BIC of metasurface excited by magnetic EIT

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2024 International Applied Computational Electromagnetics Society Symposium, ACES-China 2024

作者： Ren, Qun Wang, Fangmiao Dang, Yongjing Wang, Xiaoman You, Jianwei Wang, Xiuyu Sha, Wei E. I. Tianjin University School of Electrical and Information Engineering Tianjin300072 China Purple Mountain Laboratories Nanjing211100 China Southeast University State Key Laboratory of Millimeter Waves School of Information Science and Engineering Nanjing210096 China Tianjin University Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology School of Microelectronics Tianjin300072 China Zhejiang University Key Laboratory of Micro-Nano Electronic Devices and Smart Systems of Zhejiang Province College of Information Science and Electronic Engineering Hangzhou310027 China

ISBN: (纸本)9798350355581

Metasurfaces enable complex modulation of terahertz waves. However, the quality factor of metallic metasurfaces is often limited by intrinsic ohmic losses. The concept of bound states in the continuum (BIC) has been proposed to enhance terahertz-matter interactions. High order BICs have garnered attention due to their robustness. Previous studies on high-order BICs focused on photonic crystals, requiring high structural symmetry. In this paper, we propose a metasurface design based on the magnetic Electromagnetic induced transparency (EIT) effect to excite higher-order BIC eigenmodes. This novel approach and the resulting robust modes hold great potential for terahertz sensing and communication applications. © 2024 IEEE.

关键词： Terahertz waves

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71 GHz-fmax β-Ga2O3-on-SiC RF Power MOSFETs with Record Pout=3.1 W/mm and PAE=50.8% at 2 GHz, Pout= 2.3 W/mm at 4 GHz, and Low Microwave Noise Figure

71 GHz-fmax β-Ga2O3-on-SiC RF Power MOSFETs with Record Pou...

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2024 IEEE Symposium on VLSI technology and Circuits, VLSI technology and Circuits 2024

作者： Zhou, Min Zhou, Hong Mengwei, S. Gao, Guangjie Chen, Xiaojin Zhu, Xiaoxiao Dang, Kui Peijun, M. Xiaohua, M. Zheng, Xuefeng Liu, Zhihong Zhang, Jincheng Zhang, Yuhao Hao, Yue Key Laboratory of Wide Band Gap Semiconductor Materials and Devices School of Microelectronics Guangzhou Institute of Technology Xidian University Xi'an710071 China Shanghai Jiao Tong University Department of Electronic Engineering Shanghai200240 China Center for Power Electronics Systems Virginia Tech Blacksburg24060 United States

ISBN: (纸本)9798350361469

In this work, we demonstrate heavily-doped (8× 1018cm-3) and gate-recessed β-Ga2O3 RF power MOSFETs integrated on a high thermal conductivity SiC substrate to minimize self-heating effect (SHE), high on-resistance (Ron) and short-channel effect (SCE). As a result, β-Ga2O3-on-SiC RF power FETs achieve a record maximum oscillation frequency (fmax) of 71 GHz, output power density (Pout) of 3.1 W/mm and power added efficiency (PAE) of 50.8% at frequency (f) of 2 GHz and Pout=2.3 W/mm at f=4 GHz. In addition, this work for the first time studies the microwave noise performance of the β-Ga2O3 RF MOSFET at f range of 2-18 GHz with low minimum-noise figure (NFmin) of 1.6 dB at f=4 GHz. Remarkably, we have provided an effective route of oxide RF transistors for future high-f, high-power and low-noise RF power applications. © 2024 IEEE.

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Uniform light emission from electrically driven plasmonic grating using multilayer tunneling barriers

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Chinese Physics B 2022年第1期31卷 598-602页

作者： Xiao-Bo He Hua-Tian Hu Ji-Bo Tang Guo-Zhen Zhang Xue Chen Jun-Jun Shi Zhen-Wei Ou Zhi-Feng Shi Shun-Ping Zhang Chang Liu Hong-Xing Xu School of Physics and Technology Center for Nanoscience and Nanotechnologyand Key Laboratory of Artificial Micro-and Nano-structures of Ministry of EducationWuhan UniversityWuhan 430072China Shandong Provincial Engineering and Technical Center of Light Manipulation and Shandong Provincial Key Laboratory of Optics and Photonic Devices School of Physics and ElectronicsShandong Normal UniversityJinan 250014China The Institute for Advanced Studies Wuhan UniversityWuhan 430072China Key Laboratory of Materials Physics of Ministry of Education School of Physics and MicroelectronicsZhengzhou UniversityZhengzhou 450052China

Light emission by inelastic tunneling(LEIT)from a metal-insulator-metal tunnel junction is an ultrafast emission *** is a promising platform for ultrafast transduction from electrical signal to optical signal on integrated ***,existing procedures of fabricating LEIT devices usually involve both top-down and bottom-up techniques,which reduces its compatibility with the modern microfabrication streamline and limits its potential applications in industrial *** in this work,we lift these restrictions by using a multilayer insulator grown by atomic layer deposition as the tunnel *** the first time,we fabricate an LEIT device fully by microfabrication techniques and show a stable performance under ambient *** electroluminescence is observed over the entire active region,with the emission spectrum shaped by metallic grating *** introduction of a multilayer insulator into the LEIT can provide an additional degree of freedom for engineering the energy band landscape of the tunnel *** presented scheme of preparing a stable ultrathin tunnel barrier may also find some applications in a wide range of integrated optoelectronic devices.

关键词： electroluminescence plasmonics inelastic electron tunneling multilayer insulator atomic layer deposition

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Ultra-high temperature tolerant flexible transparent electrode with embedded silver nanowires bundle micromesh for electrical heater

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npj Flexible Electronics 2022年第1期6卷 489-497页

作者： Bowen Sun Ruixue Xu Xu Han Jing Xu Wang Hong Yimeng Xu Zhiwei Fu He Zhu Xin Sun Jiangxin Wang Peng Cui Jingjing Chang Jiaqing Xiong Kai Qian School of Microelectronics Shandong Technology Center of Nanodevices and IntegrationShandong UniversityJinan 250100China School of Mechanical Engineering Sichuan UniversityChengdu 610041China Key Lab for Special Functional Materials of Ministry of Education School of Materials Science and EngineeringHenan UniversityKaifeng 475004China State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology Shaanxi Joint Key Laboratory of GrapheneSchool of MicroelectronicsXidian University2 South Taibai RoadXi’an 710071China Innovation Center for Textile Science and Technology Donghua UniversityShanghai 201620China State Key Laboratory of Crystal Materials Shandong UniversityJinan 250100China Shenzhen Research Institute of Shandong University Shenzhen 518057China

To realize high performance flexible transparent electronics with extreme environmental adaptivity,Ag nanowires(Ag NWs)electrodes should simultaneously meet the requirements of high-temperature tolerance,chemical and mechanical ***,a scalable Ag NWs bundle micro-meshes embedded in polyimide(Ag BMs/ePI)conducting film via a facile spray coating and transfer method is *** to the synergistic effect of bundle micromesh and embedded architecture,the Ag BMs/ePI electrode exhibits high thermal stability(370℃ and 400℃ under ambient and nitrogen atmosphere conditions,respectively),low sheet resistance variation(<4%),good corrosion and deformation *** an electrical heater,the Ag BMs/ePI can achieve~204℃ with the fast thermal response time of~8 s at 8 V,and exhibits good heating stability under bent *** work offers a promising platform for the emerging flexible transparent electronics to adapt extreme environments,especially for those devices which require high-temperature processing.

关键词： nanowires transparent bundle

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Stacking monolayers at will:A scalable device optimization strategy for two-dimensional semiconductors

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Nano Research 2022年第7期15卷 6620-6627页

作者： Xiaojiao Guo Honglei Chen Jihong Bian Fuyou Liao Jingyi Ma Simeng Zhang Xinzhi Zhang Junqiang Zhu Chen Luo Zijian Zhang Lingyi Zong Yin Xia Chuming Sheng Zihan Xu Saifei Gou Xinyu Wang Peng Gong Liwei Liu Xixi Jiang Zhenghua An Chunxiao Cong Zhijun Qiu Xing Wu Peng Zhou Xinyu Chen Ling Tong Wenzhong Bao State Key Laboratory of ASIC and System School of MicroelectronicsZhangjiang Fudan International Innovation CenterFudan UniversityShanghai 200433China The Hong Kong Polytechnic University Shenzhen Research Institute Shenzhen 518057China Department of Physics State Key Laboratory of Surface PhysicsInstitute of Nanoelectronic Devices and Quantum Computing and Key Laboratory of MicroFudan UniversityShanghai 200433China State Key Laboratory of ASIC and System School of Information Science and EngineeringFudan UniversityShanghai 200433China Shanghai Key Laboratory of Multidimensional Information Processing Department of Electronic Engineering East China Normal UniversityShanghai 200241China Shenzhen Six Carbon Technology Shenzhen 518055China Department of Chemistry and Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials Fudan UniversityShanghai 200433China

In comparison to monolayer(1L),multilayer(ML)two-dimensional(2D)semiconducting transition metal dichalcogenides(TMDs)exhibit more application potential for electronic and optoelectronic devices due to their improved current carrying capability,higher mobility,and broader spectral ***,the investigation of devices based on wafer-scale ML-TMDs is still restricted by the synthesis of uniform and high-quality ML *** this work,we propose a strategy of stacking MoS_(2) monolayers via a vacuum transfer method,by which one could obtain wafer-scale high-quality MoS_(2) films with the desired number of layers at *** optical characteristics of these stacked ML-MoS_(2) films(>2L)indicate a weak interlayer *** stacked MLMoS_(2) phototransistors show improved optoelectrical performances and a broader spectral response(approximately 300-1,000 nm)than that of 1L-MoS_(2).Additionally,the dual-gate ML-MoS_(2) transistors enable enhanced electrostatic control over the stacked ML-MoS_(2) channel,and the 3L and 4L thicknesses exhibit the optimal device performances according to the turning point of the current on/off ratio and the subthreshold swing.

关键词： two-dimensional semiconductor field-effect transistors chemical vapor deposition(CVD)synthesis interlayer coupling vacuum transfer method dual-gate transistor

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Effect of conductive filament morphology on soft error of oxide based Resistive Random Access Memory

Effect of conductive filament morphology on soft error of ox...

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2021 IEEE International Conference on Integrated Circuits, Technologies and Applications, ICTA 2021

作者： Zheng, Xu Yu, Jie Sun, Wenxuan Lai, Jinru Dong, Danian Xing, Guozhong Xu, Xiaoxin Institute of Microelectronics Chinese Academy of Sciences Key Laboratory of Microelectronics Devices and Integrated Technology Beijing China University of Chinese Academy of Sciences China

ISBN: (纸本)9781665417471

The unpredictable soft-error is an important reliability issue hindering the application of the Resistive random-access memory (RRAM). In this paper, we investigated the influence of conductive filament (CF) morphology on the soft-error during the reprogrammable operation. Different filament morphology could be achieved by adopting different programing scheme for forming operation in the oxide RRAM with the structure of TiN/IL/TaOx /TiN. Hourglass shaped filament is more likely to be formed by using the bidirectional forming (Bi-F) scheme and shows more soft-error during the endurance measurement. The mechanism could be explained by the recombination of oxygen ions and oxygen vacancies in the active regions. This paper has guiding significance for the memory optimization and application. © 2021 IEEE.

关键词： RRAM

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