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检索条件"机构=Key Laboratory of Microelectronics Devices and Integration Technology"
1307 条 记 录,以下是221-230 订阅
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Effects of electrical stress on the characteristics and defect behaviors in GaN-based near-ultraviolet light emitting diodes
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Chinese Physics B 2022年 第6期31卷 678-682页
作者: Ying-Zhe Wang Mao-Sen Wang Ning Hua Kai Chen Zhi-Min He Xue-Feng Zheng Pei-Xian Li Xiao-Hua Ma Li-Xin Guo Yue Hao Key Laboratory of Wide Bandgap Semiconductor Materials and Devices School of MicroelectronicsXidian UniversityXi’an 710071China Shanghai Aerospace Electronic Technology Institute Shanghai 201109China School of Advanced Materials and Nanotechnology Xidian UniversityXi’an 710071China School of Physics and Optoelectronic Engineering Xidian UniversityXi’an 710071China
The degradation mechanism of GaN-based near-ultraviolet(NUV,320-400 nm)light emitting diodes(LEDs)with low-indium content under electrical stress is studied from the aspect of defects.A decrease in the optical power a... 详细信息
来源: 评论
Unveiling a giant electrocaloric effect at low electric fields through continuous phase transition design
Advanced Powder Materials
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Advanced Powder Materials 2024年 第5期3卷 33-45页
作者: Yunyao Huang Leiyang Zhang Pingji Ge Ruiyi Jing Wenjing Shi Chao Li Xiang Niu Vladimir Shur Haibo Zhang Shengguo Lu Yintang Yang Dawei Wang Xiaoqin Ke Li Jin Electronic Materials Research Laboratory Key Laboratory of the Ministry of EducationSchool of Electronic Science and EngineeringFaculty of Electronic and Information EngineeringXi’an Jiaotong UniversityXi’an710049China School of Physics MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed MatterXi’an Jiaotong UniversityXi’an710049China Instrument Analysis Center Xi’an Jiaotong UniversityXi’an10049China Guangdong Provincial Research Center on Smart Materials and Energy Conversion Devices School of Materials and EnergyGuangdong University of TechnologyGuangzhou510006China School of Natural Sciences and Mathematics Ural Federal UniversityEkaterinburg20000Russia School of Materials Science and Engineering State Key Laboratory of Material Processing and Die&Mould TechnologyHuazhong University of Science and TechnologyWuhan430074China School of Microelectronics Xidian UniversityXi’an710071China Functional Materials and Acousto-Optic Instruments Institute School of Instrumentation Science and EngineeringHarbin Institute of TechnologyHarbin150080China
The reported electrocaloric(EC)effect in ferroelectrics is poised for application in the next generation of solidstate refrigeration technology,exhibiting substantial developmental *** study introduces a novel and eff... 详细信息
来源: 评论
Highly thermal conductivity flexible composite films based on alumina-boron nitride binary fillers
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Ceramics International 2025年
作者: Hu, Xin Sha, Xiaolu Zhao, Xinyu Li, Xin Gao, Wei Zhang, Kexiong Gao, Jinling Long, Ze Yu, Jinqiang Liang, Hongwei Yin, Hong State Key Laboratory of High Pressure and Superhard Materials College of Physics Jilin University Changchun130012 China School of Integrated Circuits Dalian University of Technology Dalian116024 China Dalian Key Laboratory of Wide Bandgap Semiconductor Devices Integration and System Dalian116024 China
Thermal interface materials (TIMs) exhibiting dual attributes of high thermal conductivity and excellent electrical insulation are urgently in demand for heat management of microelectronic devices. However, ultrahigh ... 详细信息
来源: 评论
Low palladium content CeO_(2)/ZnO composite for acetone sensor with sub-second response prepared by ultrasonic method
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Journal of Central South University 2024年 第7期31卷 2137-2149页
作者: CHEN Xu-jie XING Qiao-ling TANG Xuan CAI Yong ZHANG Ming Hunan Provincial Key Laboratory of Low-dimensional Structural Physics&Devices School of Physics and ElectronicsHunan UniversityChangsha 410082China Changsha Semiconductor Technology and Application Innovation Research Institute College of Semiconductors(College of Integrated Circuits)Hunan UniversityChangsha 410082China School of Mechanical Engineering and Mechanics Xiangtan UniversityXiangtan 411105China Research Institute of Hunan University in Chongqing Chongqing 401120China Engineering Research Center of Advanced Semiconductor Technology and Application of Ministry of Education&Key Laboratory for Micro-/Nano-Optoelectronic Devices of Ministry of Education National Key Laboratory of Power Semiconductor and Integration TechnologyCollege of Semiconductors(College of Integrated Circuits)Hunan UniversityChangsha 410082China
In practical applications,noble metal doping is often used to prepare high performance gas sensors,but more noble metal doping will lead to higher preparation *** this study,CeO_(2)/ZnO-Pd with low palladium content w... 详细信息
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Higher order BIC of metasurface excited by magnetic EIT
Higher order BIC of metasurface excited by magnetic EIT
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2024 International Applied Computational Electromagnetics Society Symposium, ACES-China 2024
作者: Ren, Qun Wang, Fangmiao Dang, Yongjing Wang, Xiaoman You, Jianwei Wang, Xiuyu Sha, Wei E. I. Tianjin University School of Electrical and Information Engineering Tianjin300072 China Purple Mountain Laboratories Nanjing211100 China Southeast University State Key Laboratory of Millimeter Waves School of Information Science and Engineering Nanjing210096 China Tianjin University Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology School of Microelectronics Tianjin300072 China Zhejiang University Key Laboratory of Micro-Nano Electronic Devices and Smart Systems of Zhejiang Province College of Information Science and Electronic Engineering Hangzhou310027 China
Metasurfaces enable complex modulation of terahertz waves. However, the quality factor of metallic metasurfaces is often limited by intrinsic ohmic losses. The concept of bound states in the continuum (BIC) has been p... 详细信息
来源: 评论
71 GHz-fmax β-Ga2O3-on-SiC RF Power MOSFETs with Record Pout=3.1 W/mm and PAE=50.8% at 2 GHz, Pout= 2.3 W/mm at 4 GHz, and Low Microwave Noise Figure
71 GHz-fmax β-Ga2O3-on-SiC RF Power MOSFETs with Record Pou...
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2024 IEEE Symposium on VLSI technology and Circuits, VLSI technology and Circuits 2024
作者: Zhou, Min Zhou, Hong Mengwei, S. Gao, Guangjie Chen, Xiaojin Zhu, Xiaoxiao Dang, Kui Peijun, M. Xiaohua, M. Zheng, Xuefeng Liu, Zhihong Zhang, Jincheng Zhang, Yuhao Hao, Yue Key Laboratory of Wide Band Gap Semiconductor Materials and Devices School of Microelectronics Guangzhou Institute of Technology Xidian University Xi'an710071 China Shanghai Jiao Tong University Department of Electronic Engineering Shanghai200240 China Center for Power Electronics Systems Virginia Tech Blacksburg24060 United States
In this work, we demonstrate heavily-doped (8× 1018cm-3) and gate-recessed β-Ga2O3 RF power MOSFETs integrated on a high thermal conductivity SiC substrate to minimize self-heating effect (SHE), high on-resistan...
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Uniform light emission from electrically driven plasmonic grating using multilayer tunneling barriers
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Chinese Physics B 2022年 第1期31卷 598-602页
作者: Xiao-Bo He Hua-Tian Hu Ji-Bo Tang Guo-Zhen Zhang Xue Chen Jun-Jun Shi Zhen-Wei Ou Zhi-Feng Shi Shun-Ping Zhang Chang Liu Hong-Xing Xu School of Physics and Technology Center for Nanoscience and Nanotechnologyand Key Laboratory of Artificial Micro-and Nano-structures of Ministry of EducationWuhan UniversityWuhan 430072China Shandong Provincial Engineering and Technical Center of Light Manipulation and Shandong Provincial Key Laboratory of Optics and Photonic Devices School of Physics and ElectronicsShandong Normal UniversityJinan 250014China The Institute for Advanced Studies Wuhan UniversityWuhan 430072China Key Laboratory of Materials Physics of Ministry of Education School of Physics and MicroelectronicsZhengzhou UniversityZhengzhou 450052China
Light emission by inelastic tunneling(LEIT)from a metal-insulator-metal tunnel junction is an ultrafast emission *** is a promising platform for ultrafast transduction from electrical signal to optical signal on integ... 详细信息
来源: 评论
Ultra-high temperature tolerant flexible transparent electrode with embedded silver nanowires bundle micromesh for electrical heater
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npj Flexible Electronics 2022年 第1期6卷 489-497页
作者: Bowen Sun Ruixue Xu Xu Han Jing Xu Wang Hong Yimeng Xu Zhiwei Fu He Zhu Xin Sun Jiangxin Wang Peng Cui Jingjing Chang Jiaqing Xiong Kai Qian School of Microelectronics Shandong Technology Center of Nanodevices and IntegrationShandong UniversityJinan 250100China School of Mechanical Engineering Sichuan UniversityChengdu 610041China Key Lab for Special Functional Materials of Ministry of Education School of Materials Science and EngineeringHenan UniversityKaifeng 475004China State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology Shaanxi Joint Key Laboratory of GrapheneSchool of MicroelectronicsXidian University2 South Taibai RoadXi’an 710071China Innovation Center for Textile Science and Technology Donghua UniversityShanghai 201620China State Key Laboratory of Crystal Materials Shandong UniversityJinan 250100China Shenzhen Research Institute of Shandong University Shenzhen 518057China
To realize high performance flexible transparent electronics with extreme environmental adaptivity,Ag nanowires(Ag NWs)electrodes should simultaneously meet the requirements of high-temperature tolerance,chemical and ... 详细信息
来源: 评论
Stacking monolayers at will:A scalable device optimization strategy for two-dimensional semiconductors
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Nano Research 2022年 第7期15卷 6620-6627页
作者: Xiaojiao Guo Honglei Chen Jihong Bian Fuyou Liao Jingyi Ma Simeng Zhang Xinzhi Zhang Junqiang Zhu Chen Luo Zijian Zhang Lingyi Zong Yin Xia Chuming Sheng Zihan Xu Saifei Gou Xinyu Wang Peng Gong Liwei Liu Xixi Jiang Zhenghua An Chunxiao Cong Zhijun Qiu Xing Wu Peng Zhou Xinyu Chen Ling Tong Wenzhong Bao State Key Laboratory of ASIC and System School of MicroelectronicsZhangjiang Fudan International Innovation CenterFudan UniversityShanghai 200433China The Hong Kong Polytechnic University Shenzhen Research Institute Shenzhen 518057China Department of Physics State Key Laboratory of Surface PhysicsInstitute of Nanoelectronic Devices and Quantum Computing and Key Laboratory of MicroFudan UniversityShanghai 200433China State Key Laboratory of ASIC and System School of Information Science and EngineeringFudan UniversityShanghai 200433China Shanghai Key Laboratory of Multidimensional Information Processing Department of Electronic Engineering East China Normal UniversityShanghai 200241China Shenzhen Six Carbon Technology Shenzhen 518055China Department of Chemistry and Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials Fudan UniversityShanghai 200433China
In comparison to monolayer(1L),multilayer(ML)two-dimensional(2D)semiconducting transition metal dichalcogenides(TMDs)exhibit more application potential for electronic and optoelectronic devices due to their improved c... 详细信息
来源: 评论
Effect of conductive filament morphology on soft error of oxide based Resistive Random Access Memory
Effect of conductive filament morphology on soft error of ox...
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2021 IEEE International Conference on Integrated Circuits, Technologies and Applications, ICTA 2021
作者: Zheng, Xu Yu, Jie Sun, Wenxuan Lai, Jinru Dong, Danian Xing, Guozhong Xu, Xiaoxin Institute of Microelectronics Chinese Academy of Sciences Key Laboratory of Microelectronics Devices and Integrated Technology Beijing China University of Chinese Academy of Sciences China
The unpredictable soft-error is an important reliability issue hindering the application of the Resistive random-access memory (RRAM). In this paper, we investigated the influence of conductive filament (CF) morpholog... 详细信息
来源: 评论