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16th IEEE International Conference on Solid-State and Integrated Circuit technology, ICSICT 2022

作者： Wang, Peng Jiang, Yi-Zhou Liu, Dong-Sheng Zhang, You Li, Wen-Hong Huang, Wei Xiao, Zhi-Qiang Qiu, Yi-Wu Zhou, Xin-Jie Yang, Hong-Qiang Zhang, Wei Fudan University State Key Laboratory of Asic and System Shanghai Institute of Intelligent Electronics & Systems School of Microelectronics Shanghai200433 China Wuxi Microelectronics Scientific and Research Center Wuxi214035 China University of Electronic Science and Technology of China The State Key Laboratory of Electronic Thin Films and Integrated Devices Chengdu610054 China

ISBN: (数字)9781665469067

ISBN: (纸本)9781665469067

In this paper, a fast transient response capacitor-less gallium nitride (GaN)-based LDO on the GaN smart power technology platform for GaN integrated power regulation application is first proposed. A proposed GaN error amplifier (EA) with bootstrapping technology can effectively boost the gain to 45 dB. By employing the EA and a regulator enhancement-mode HEMT, the LDO is able to achieve a 22 MHz unit gain frequency with a load capacitor and current ranging from 0 pF to10 pF and 250 μA to 100mA, respectively. And the short settling time (20 ns) for 50-100 mA load change in 10 ns edge-time without load capacitor manifests superior high-frequency performance compared to silicon-based LDO. The circuit further promotes the development of an all-GaN solution compact power management system with improved reliability and performance. © 2022 IEEE.

关键词： Gallium nitride

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Millimeter-Wave AlGaN/GaN HEMTs/Si Operated on 12V for 5G RF Handset Applications 16

Millimeter-Wave AlGaN/GaN HEMTs/Si Operated on 12V for 5G RF...

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16th IEEE International Conference on Solid-State and Integrated Circuit technology, ICSICT 2022

作者： Liu, Dong-Sheng Wang, Peng Jiang, Yi-Zhou Huang, Wei Xiao, Zhi-Qiang Yang, Hong-Qiang Zhang, Wei. Fudan University State Key Laboratory of Asic and System Shanghai Institute of Intelligent Electronics & Systems School of Microelectronics Shanghai200433 China Wuxi Microelectronics Scientific and Research Center Wuxi214035 China University of Electronic Science and Technology of China The State Key Laboratory of Electronic Thin Films and Integrated Devices Chengdu610054 China

ISBN: (数字)9781665469067

ISBN: (纸本)9781665469067

In this paper, a RF AlGaN/GaN high electron mobility transistor (HEMT) based on low voltage application of 5G RF handset, firstly fabricated on high-resistive silicon substrate is introduced, which uses Ni/Au as T-shaped gate structure and double-layer silicide as surface medium. The maximum output current density of the device is 1.07 A/mm at Vds = 12 V and Vgs = 2 V. fT = 27.8 GHz and BV (the breakdown voltage) = 35 V/μm are obtained for the 180-nm gate-length device with 1-μm source-to-gate spacing. © 2022 IEEE.

关键词： Silicides

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Novel 15T SRAM Cell for Low Voltage High Reliability Application 14

Novel 15T SRAM Cell for Low Voltage High Reliability Applica...

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14th IEEE International Conference on ASIC, ASICON 2021

作者： Han, Yongkang Zhao, Yulin Hu, Qiao Liu, Xuanzhi Peng, Bo Jiang, Haijun Yang, Jianguo Xue, Xiaoyong Zhejiang Lab Hangzhou311121 China Institute of Microelectronics of the Chinese Academy of Sciences Key Laboratory of Microelectronics Devices and Integrated Technology Beijing100029 China

ISBN: (纸本)9781665411493

With the development of portable applications and electric vehicles, battery life becomes very important. In this application scenario, Static random access memory (SRAM) design should consider power consumption first. Because the power consumption is quadratic with the supply voltage, the main way to reduce the power consumption is to reduce the supply voltage. But it can significantly reduce the read stability and writing ability of the classical 6T cell. Moreover, as the development of CMOS process nodes, Static Noise Margin (SNM) will be further reduced. Therefore, this paper analyzes the 6T cell and proposes a highly stable 15T cell based on SMIC 28nm CMOS technology. The simulation results show that compared with 6T cell, 15T cell eliminates the half-select disturb, 6x improvement in read SNM at 0.6V supply, read delay reduced by 405ps, and increases 1x area overhead. © 2021 IEEE.

关键词： Electric power utilization

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Modulation of Microstructure and Charge Transport in Polymer Monolayer Transistors by Solution Aging

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Chinese Journal of Chemistry 2021年第11期39卷 3079-3084页

作者： Xuemei Lin Ruochen Liu Chenming Ding Junyang Deng Yifu Guo Shibing Long Ling Li Mengmeng Li Key Laboratory of Microelectronic Devices and Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing100029 China School of Microelectronics University of Science and Technology of ChinaHefeiAnhui230026 China School of Electronic Electrical and Communication EngineeringUniversity of Chinese Academy of SciencesBeijing100049 China E-mail:

A few monolayers of organic semiconductors adjacent to the dielectric layer are of vital importance in organic field-effect transistors due to their dominant role in charge *** this report,the 2-nm-thick polymer monolayers based on poly(3-hexylthiophene)with different molecular weights(M_(n))were fabricated using dip-coating *** the monolayer(solid state)formation from the solution,a disorder-to-order transition of polymer conformation is observed through UV-vis absorption ***,high Mn polymer monolayer generates higher crystalline fibrillar microstructure than the low Mn one due to the strongerπ–πintermolecular packing between *** importantly,the solution aging procedure is utilized to further improve the morphology of polymer *** is obvious that after aging for 6 d,both fiber dimension and density as well as conjugation length are significantly increased under the same processing conditions in comparison to the fresh solution,and consequently the field-effect mobilities are remarkably enhanced by 2—4 *** that the maximum mobility of 0.027 cm2·V^(–1)·s^(–1)is among the highest reported values for poly(3-hexylthiophene)monolayer *** results demonstrate a simple but powerful strategy for boosting the device performance of polymer monolayer transistors.

关键词： Aggregation Conjugation Monolayers Solution aging Charge transport

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Crystal Growth Promotion Enables High-Performance Te0.7Se0.3 Thin-Film Shortwave Infrared Photodetector for Multispectral Imaging Applications

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Advanced Functional Materials 2025年

作者： Li, Hongbo Li, Chuanhao Peng, Meng Li, Kanghua Chen, Chao Chen, Yuexing Zheng, Zhuanghao Su, Zhenghua Liang, Guangxing Chen, Shuo Institute of Thin Film Physics and Applications Shenzhen Key Laboratory of Advanced Thin Films and Applications Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province State Key Laboratory of Radio Frequency Heterogeneous Integration College of Physics and Optoelectronic Engineering Shenzhen University Shenzhen518060 China Huazhong University of Science and Technology Wuhan430074 China

Tellurium-selenium (TexSe1-x) alloy compound is considered as an excellent light absorber layer for thin-film photodetector applications, owing to its suitable bandgap and excellent optoelectronic performance. Recently, the research on TexSe1-x photodetectors has achieved considerable progress, especially under electron and/or hole transport layer engineering to improve the device responsivity. However, the intrinsic growth mechanism of TexSe1-x thin film still needs investigation. In this work, based on the analysis of crystal growth thermodynamics and kinetics, Te0.7Se0.3 light absorber with optimal (100) growth orientation can be achieved through thermal evaporation of pre-alloyed Te0.7Se0.3 powder and atmosphere-assisted slow thermal annealing of Te0.7Se0.3 thin film. Thanks to the optimized Te0.7Se0.3 light absorber and Te0.7Se0.3/ZnO heterojunction interface, the champion self-powered thin-film photodetector possesses a wide spectral response range of 300–1600 nm, minimized dark current density of 3.1 × 10−5 mA cm−2, accompanied with satisfactory responsivity of 0.06 A W−1 and detectivity of 5.9 × 109 Jones at 1300 nm, and linear dynamic range exceeding 101 dB. Interestingly, an imaging system based on this photodetector can achieve high-precision color imaging and multispectral imaging from visible light to short wave infrared light, highlighting the intriguing application potential of Te0.7Se0.3 photodetectors. © 2025 Wiley-VCH GmbH.

关键词： Heterojunctions

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A Novel NASICON‑Type Na_(3.5)MnCr_(0.5)Ti_(0.5)(PO_(4))_(3)Nanofiber with Multi‑electron Reaction for High‑Performance Sodium‑Ion Batteries

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Advanced Fiber Materials 2024年第2期6卷 561-569页

作者： Ting Zhu Wei Liu Xiaobin Liao Mengyao Wang Hao Fan Zihe Wei Congcong Cai Liyan Yang Mufang Li Dong Wang Ping Hu Xuanpeng Wang Key Laboratory of Textile Fiber and Products Ministry of EducationHubei International Scientific and Technological Cooperation Base of Intelligent TextileMaterials&ApplicationWuhan Textile UniversityWuhan 430200China Hubei Key Laboratory of Micro‑Nanoelectronic Materials and Devices School of MicroelectronicsHubei UniversityWuhan 430062China State Key Laboratory of Advanced Technology for Materials Synthesis and Processing Wuhan University of TechnologyWuhan 430070China Department of Physical Science&Technology School of ScienceWuhan University of TechnologyWuhan 430070China Hubei Longzhong Laboratory Wuhan University of Technology(Xiangyang Demonstration Zone)Xiangyang 441000China

Sodium superionic conductors(NASICONs)show significant promise for application in the development of cathodes for sodium-ion batteries(SIBs).However,it remains a major challenge to develop the desired multi-electron reaction cathode with a high specific capacity and energy ***,we report a novel NASICON-type Na_(3.5)MnCr_(0.5)Ti_(0.5)(PO_(4))_(3)cathode obtained by combining electrospinning and stepwise sintering *** cathode exhibits a high discharge capacity of 160.4 mAh g^(−1)and operates at a considerable medium voltage of 3.2 *** Na_(3.5)MnCr_(0.5)Ti_(0.5)(PO_(4))_(3)cathode undergoes a multi-electron redox reaction involving the Cr^(3+/4+)(4.40/4.31 V ***/Na^(+)),Mn^(3+/4+)(4.18/4.03 V),Mn^(2+/3+)(3.74/3.41 V),and Ti^(3+/4+)(2.04/2.14 V)redox *** redox reaction enables a three-electron transfer during the Na+intercalation/de-intercalation *** a result,the Na_(3.5)MnCr_(0.5)Ti_(0.5)(PO_(4))_(3)demonstrates a significant enhancement in energy density,surpassing other recently reported SIB *** highly reversible structure evolution and small volume changes during cycling were demonstrated with in-situ X-ray diffraction,ensuring outstanding cyclability with 77%capacity retention after 500 ***,a NMCTP@C//Sb@C full battery was fabricated,which delivered a high energy density of 421 Wh kg−1 and exhibited good cyclability with 75.7%capacity retention after 100 *** rational design of composition regulation with multi-metal ion substitution holds the potential to unlock new possibilities in achieving high-performance SIBs.

关键词： Sodium-ion battery NASICON structure Na_(3.5)MnCr_(0.5)Ti_(0.5)(PO_(4))_(3)nanofiber Ex/in-situ characterization Multi-electron reaction

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Novel Heterojunction Field Plate $\beta-\text{Ga}_{2}\mathrm{O}_{3}$ MOSFET with High Breakdown Voltage

Novel Heterojunction Field Plate $\beta-\text{Ga}_{2}\mathrm...

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International Conference on Solid-State and Integrated Circuit technology

作者： Xiangnan Li Jie Wei Kai Zhao Linyao Hao Xiaosong Peng Yuxi Wei Renkuan Liu Wei Song Pei Guo Xiaorong Luo State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu China College of Microelectronics Chengdu University of Information Technology Chengdu China

ISBN: (数字)9798350361834

ISBN: (纸本)9798350361841

A novel $\beta-\text{Ga}_{2}\mathrm{O}_{3}$ metal-oxide-semiconductor field-effect transistor (MOSFET) featured heterojunction field plate (HFP) is proposed to enhance its breakdown voltage $(BV)$ and reduce specific ON-resistance $(R_{\text{ON,SP}})$ , and its mechanism is investigated by simulation. The HFP is composed of P-NiO above the drift and regrown $\text{Ga}_{2}\mathrm{O}_{3}$ at drain side. The P-NiO and N-drift $\text{Ga}_{2}\mathrm{O}_{3}$ work like the P/N pillars of superjunction. Thus, the HFP structure not only modulates the surface electric field (E-field) distribution to improve the $BV$ in the off-state, but also introduces assisted depletion effect to improve the drift doping concentration to reduce the $R_{\text{ON,SP}}$ . Based on the charge balance principle between the P-NiO and N-drift $\text{Ga}_{2}\mathrm{O}_{3}$ , the $BV$ , power-figure-of-merit $\left(\text{PFOM}=B V^2 / \text{Ron}, \text{SP}\right)$ and $R_{\text{ON},\text{SP}}$ of the proposed HFP $\beta-\text{Ga}_{2}\mathrm{O}_{3}$ MOSFET are improved by 40.5%, 230.8% and 40.3% compared with those of conventional $\beta-\text{Ga}_{2}\mathrm{O}_{3}$ MOSFET at the same dimensions. Thus, this proposed device provides a new design strategy for high-power $\beta-\text{Ga}_{2}\mathrm{O}_{3}$ MOSFETs.

关键词： Integrated circuit technology MOSFET High-voltage techniques Doping Heterojunctions Transistors Electric fields

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High Short-Circuit Capability and Low-Loss SOI-LIGBT with Double-Integrated NMOS

High Short-Circuit Capability and Low-Loss SOI-LIGBT with Do...

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International Conference on Solid-State and Integrated Circuit technology

作者： Jialei Tan Jie Wei Jinlong Lu Xindi Liu Gaoqiang Deng Wei Song Pei Guo Bo Zhang Xiaorong Luo State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu China College of Microelectronics Chengdu University of Information Technology Chengdu China

ISBN: (数字)9798350361834

ISBN: (纸本)9798350361841

A novel SOI lateral insulated gate bipolar transistor (LIGBT) featuring double-integrated NMOS (DNM) is proposed and investigated. The DNM (MOS1 and MOS2) self-adaptively controls the states of parasitic diode $\mathrm{D}_0$ (P-well/N+ cathode). In the on state, the Do adaptively turns on to enhance the conductivity modulation effect to improve the on-state voltage drop $(V_{\mathrm{o}\mathrm{n}})$ . In the saturation and short circuit state with high anode voltage $(V_\text{AK})$ , the $\mathrm{D}_0$ is adaptively turned off and reverse-biased to reduce the saturation current $(I_{\mathrm{s}\mathrm{a}\mathrm{t}})$ and improve the latch-up immunity and achieve a better short-circuit withstanding time $(t_{\mathrm{s}\mathrm{c}})$ . During turning-off period with increasing $V_{\text{AK}}$ , the DNM LIGBT significantly reduces turnoff loss $(E_{\text{off}})$ due to the adaptively turn-on MOS1 providing a low resistance path to extract the stored carriers quickly. DNM LIGBT decreases the $E_{\text{off}}$ by 76% at the same $V_{\text{on}}$ compared with the SCM LIGBT and improves $t_{\mathrm{s}\mathrm{c}}$ by 252% and 27% compared with those of Con. and SCM LIGBTs.

关键词： Resistance Integrated circuit technology Insulated gate bipolar transistors Modulation Voltage Conductivity Turning Sulfur Molybdenum MOS devices

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Characterization of low-resistance ohmic contacts to heavily carbon-doped n-type InGaAsBi films treated by rapid thermal annealing

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Chinese Physics B 2021年第2期30卷 472-475页

作者： Shu-Xing Zhou Li-Kun Ai Ming Qi An-Huai Xu Jia-Sheng Yan Shu-Sen Li Zhi Jin Hubei Key Laboratory of Low Dimensional Optoelectronic Materials and Devices Hubei University of Arts and ScienceXiangyang 441053China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China Hubei Key Laboratory of High Power Semiconductor Technology Xiangyang 441021China Institute of Microelectronics Chinese Academy of SciencesBeijing 100029China

Carbon-doped In Ga As Bi films on In P:Fe(100)substrates have been grown by gas source molecular beam epitaxy(GSMBE).The electrical properties and non-alloyed Ti/Pt/Au contact resistance of n-type carbon-doped In Ga As Bi films were characterized by Van der Pauw-Hall measurement and transmission line method(TLM)with and without rapid thermal annealing(RTA).It was found that the specific contact resistance decreases gradually with the increase of carrier *** electron concentration exhibits a sharp increase,and the specific contact resistance shows a noticeable reduction after *** RTA,the In Ga As Bi film grown under CBr4 supply pressure of 0.18 Torr exhibited a high electron concentration of 1.6×10^(21) cm^(-3) and achieved an ultra-low specific contact resistance of 1×10^(-8)Ω·cm^(2),revealing that contact resistance depends greatly on the tunneling effect.

关键词： InGaAsBi electrical properties contact resistance rapid thermal annealing

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Cost-Effective 1200 V SiC MOSFETs on a Novel 150 mm SiC Engineered Substrate with Dummy-Grade Material Reuse

Cost-Effective 1200 V SiC MOSFETs on a Novel 150 mm SiC Engi...

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2024 IEEE International Electron devices Meeting, IEDM 2024

作者： Wang, Xinhua Xing, Xiangjie Yang, Xiaolei Yang, Xin Chen, Yan Ma, Guoliang Wang, Bixuan Zhao, Zhifei Yuan, Chao Bai, Yun Huang, Sen Lei, Yipei Shi, Jingyuan Liu, Fuchao Zhang, Yuhao Mu, Fenwen Liu, Xinyu Liu, Sheng Hao, Yue HF&HV Device and Integrate Center Institute of Microelectronics Chinese Academy of Science Beijing China State Key Laboratory of WBS Devices and Integrated Technology Nanjing Electronic Devices Institute Nanjing China Center for Power Electronics Systems Virginia Tech BlacksburgVA United States Institute of Technological Sciences Wuhan University Wuhan China TJ Innovative Semiconductor Substrate Technology Co. Ltd Tianjing China Xidian University Xi’an China

ISBN: (纸本)9798350365429

The SiC substrate cost accounts for >50% of final device cost, and its manufacturing suffers from a high carbon footprint. To address this challenge, this work demonstrates a novel 150 mm single-crystal SiC engineered substrate, which homogeneously integrates a prime-grade SiC layer onto a dummy-grade SiC substrate by surface-active bonding. This engineered substrate reuses low-grade SiC substrates, which are often disposed as wastes in the MOSFET industrial production, as well as recycling the high-grade wafer for over 30 times. It thus can enable a drastic reduction in the substrate cost (by ~40%) and the associated carbon footprint. The engineered substrate demonstrates a defect density as low as prime-grade substrate, a low thermal boundary resistance (TBR) of 2.8 m2K/GW, as well as very small electric field at the bonded interface. The TBR is among the lowest reported for the SiC interfaces bonded with SiC, GaN, and Ga2O3. The 150 mm, 1200 V-class SiC epi grown on this substrate achieved a high killer-defect-free yield of 99.2%. The 1200 V, 20 mΩ SiC MOSFETs fabricated on this 150 mm epi demonstrate a yield over 70% (for IDSS250 A, 10 ms surge current. To the best of our knowledge, this is the first report of the wafer-level device data and high-current robustness for a SiC engineering substrate. These results show the great potential of this new substrate technology to enable more economical and sustainable SiC power electronics. © 2024 IEEE.

关键词： MOSFET devices

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