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检索条件"机构=Key Laboratory of Microelectronics Devices and Integration Technology"
1308 条 记 录,以下是241-250 订阅
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A Monolithic GaN LDO Based on 12 V/0.5 μm GaN-on-Si Power technology Achieving 20 ns Settling Time and 22 MHz UGF  16
A Monolithic GaN LDO Based on 12 V/0.5 μm GaN-on-Si Power T...
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16th IEEE International Conference on Solid-State and Integrated Circuit technology, ICSICT 2022
作者: Wang, Peng Jiang, Yi-Zhou Liu, Dong-Sheng Zhang, You Li, Wen-Hong Huang, Wei Xiao, Zhi-Qiang Qiu, Yi-Wu Zhou, Xin-Jie Yang, Hong-Qiang Zhang, Wei Fudan University State Key Laboratory of Asic and System Shanghai Institute of Intelligent Electronics & Systems School of Microelectronics Shanghai200433 China Wuxi Microelectronics Scientific and Research Center Wuxi214035 China University of Electronic Science and Technology of China The State Key Laboratory of Electronic Thin Films and Integrated Devices Chengdu610054 China
In this paper, a fast transient response capacitor-less gallium nitride (GaN)-based LDO on the GaN smart power technology platform for GaN integrated power regulation application is first proposed. A proposed GaN erro... 详细信息
来源: 评论
Millimeter-Wave AlGaN/GaN HEMTs/Si Operated on 12V for 5G RF Handset Applications  16
Millimeter-Wave AlGaN/GaN HEMTs/Si Operated on 12V for 5G RF...
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16th IEEE International Conference on Solid-State and Integrated Circuit technology, ICSICT 2022
作者: Liu, Dong-Sheng Wang, Peng Jiang, Yi-Zhou Huang, Wei Xiao, Zhi-Qiang Yang, Hong-Qiang Zhang, Wei. Fudan University State Key Laboratory of Asic and System Shanghai Institute of Intelligent Electronics & Systems School of Microelectronics Shanghai200433 China Wuxi Microelectronics Scientific and Research Center Wuxi214035 China University of Electronic Science and Technology of China The State Key Laboratory of Electronic Thin Films and Integrated Devices Chengdu610054 China
In this paper, a RF AlGaN/GaN high electron mobility transistor (HEMT) based on low voltage application of 5G RF handset, firstly fabricated on high-resistive silicon substrate is introduced, which uses Ni/Au as T-sha... 详细信息
来源: 评论
Novel 15T SRAM Cell for Low Voltage High Reliability Application  14
Novel 15T SRAM Cell for Low Voltage High Reliability Applica...
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14th IEEE International Conference on ASIC, ASICON 2021
作者: Han, Yongkang Zhao, Yulin Hu, Qiao Liu, Xuanzhi Peng, Bo Jiang, Haijun Yang, Jianguo Xue, Xiaoyong Zhejiang Lab Hangzhou311121 China Institute of Microelectronics of the Chinese Academy of Sciences Key Laboratory of Microelectronics Devices and Integrated Technology Beijing100029 China
With the development of portable applications and electric vehicles, battery life becomes very important. In this application scenario, Static random access memory (SRAM) design should consider power consumption first... 详细信息
来源: 评论
Modulation of Microstructure and Charge Transport in Polymer Monolayer Transistors by Solution Aging
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Chinese Journal of Chemistry 2021年 第11期39卷 3079-3084页
作者: Xuemei Lin Ruochen Liu Chenming Ding Junyang Deng Yifu Guo Shibing Long Ling Li Mengmeng Li Key Laboratory of Microelectronic Devices and Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing100029 China School of Microelectronics University of Science and Technology of ChinaHefeiAnhui230026 China School of Electronic Electrical and Communication EngineeringUniversity of Chinese Academy of SciencesBeijing100049 China E-mail:
A few monolayers of organic semiconductors adjacent to the dielectric layer are of vital importance in organic field-effect transistors due to their dominant role in charge *** this report,the 2-nm-thick polymer monol... 详细信息
来源: 评论
Crystal Growth Promotion Enables High-Performance Te0.7Se0.3 Thin-Film Shortwave Infrared Photodetector for Multispectral Imaging Applications
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Advanced Functional Materials 2025年
作者: Li, Hongbo Li, Chuanhao Peng, Meng Li, Kanghua Chen, Chao Chen, Yuexing Zheng, Zhuanghao Su, Zhenghua Liang, Guangxing Chen, Shuo Institute of Thin Film Physics and Applications Shenzhen Key Laboratory of Advanced Thin Films and Applications Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province State Key Laboratory of Radio Frequency Heterogeneous Integration College of Physics and Optoelectronic Engineering Shenzhen University Shenzhen518060 China Huazhong University of Science and Technology Wuhan430074 China
Tellurium-selenium (TexSe1-x) alloy compound is considered as an excellent light absorber layer for thin-film photodetector applications, owing to its suitable bandgap and excellent optoelectronic performance. Recentl... 详细信息
来源: 评论
A Novel NASICON‑Type Na_(3.5)MnCr_(0.5)Ti_(0.5)(PO_(4))_(3)Nanofiber with Multi‑electron Reaction for High‑Performance Sodium‑Ion Batteries
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Advanced Fiber Materials 2024年 第2期6卷 561-569页
作者: Ting Zhu Wei Liu Xiaobin Liao Mengyao Wang Hao Fan Zihe Wei Congcong Cai Liyan Yang Mufang Li Dong Wang Ping Hu Xuanpeng Wang Key Laboratory of Textile Fiber and Products Ministry of EducationHubei International Scientific and Technological Cooperation Base of Intelligent TextileMaterials&ApplicationWuhan Textile UniversityWuhan 430200China Hubei Key Laboratory of Micro‑Nanoelectronic Materials and Devices School of MicroelectronicsHubei UniversityWuhan 430062China State Key Laboratory of Advanced Technology for Materials Synthesis and Processing Wuhan University of TechnologyWuhan 430070China Department of Physical Science&Technology School of ScienceWuhan University of TechnologyWuhan 430070China Hubei Longzhong Laboratory Wuhan University of Technology(Xiangyang Demonstration Zone)Xiangyang 441000China
Sodium superionic conductors(NASICONs)show significant promise for application in the development of cathodes for sodium-ion batteries(SIBs).However,it remains a major challenge to develop the desired multi-electron r... 详细信息
来源: 评论
Novel Heterojunction Field Plate $\beta-\text{Ga}_{2}\mathrm{O}_{3}$ MOSFET with High Breakdown Voltage
Novel Heterojunction Field Plate $\beta-\text{Ga}_{2}\mathrm...
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International Conference on Solid-State and Integrated Circuit technology
作者: Xiangnan Li Jie Wei Kai Zhao Linyao Hao Xiaosong Peng Yuxi Wei Renkuan Liu Wei Song Pei Guo Xiaorong Luo State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu China College of Microelectronics Chengdu University of Information Technology Chengdu China
A novel $\beta-\text{Ga}_{2}\mathrm{O}_{3}$ metal-oxide-semiconductor field-effect transistor (MOSFET) featured heterojunction field plate (HFP) is proposed to enhance its breakdown voltage $(BV)$ and reduce specific ... 详细信息
来源: 评论
High Short-Circuit Capability and Low-Loss SOI-LIGBT with Double-Integrated NMOS
High Short-Circuit Capability and Low-Loss SOI-LIGBT with Do...
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International Conference on Solid-State and Integrated Circuit technology
作者: Jialei Tan Jie Wei Jinlong Lu Xindi Liu Gaoqiang Deng Wei Song Pei Guo Bo Zhang Xiaorong Luo State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu China College of Microelectronics Chengdu University of Information Technology Chengdu China
A novel SOI lateral insulated gate bipolar transistor (LIGBT) featuring double-integrated NMOS (DNM) is proposed and investigated. The DNM (MOS1 and MOS2) self-adaptively controls the states of parasitic diode $\mathr... 详细信息
来源: 评论
Characterization of low-resistance ohmic contacts to heavily carbon-doped n-type InGaAsBi films treated by rapid thermal annealing
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Chinese Physics B 2021年 第2期30卷 472-475页
作者: Shu-Xing Zhou Li-Kun Ai Ming Qi An-Huai Xu Jia-Sheng Yan Shu-Sen Li Zhi Jin Hubei Key Laboratory of Low Dimensional Optoelectronic Materials and Devices Hubei University of Arts and ScienceXiangyang 441053China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China Hubei Key Laboratory of High Power Semiconductor Technology Xiangyang 441021China Institute of Microelectronics Chinese Academy of SciencesBeijing 100029China
Carbon-doped In Ga As Bi films on In P:Fe(100)substrates have been grown by gas source molecular beam epitaxy(GSMBE).The electrical properties and non-alloyed Ti/Pt/Au contact resistance of n-type carbon-doped In Ga A... 详细信息
来源: 评论
Cost-Effective 1200 V SiC MOSFETs on a Novel 150 mm SiC Engineered Substrate with Dummy-Grade Material Reuse
Cost-Effective 1200 V SiC MOSFETs on a Novel 150 mm SiC Engi...
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2024 IEEE International Electron devices Meeting, IEDM 2024
作者: Wang, Xinhua Xing, Xiangjie Yang, Xiaolei Yang, Xin Chen, Yan Ma, Guoliang Wang, Bixuan Zhao, Zhifei Yuan, Chao Bai, Yun Huang, Sen Lei, Yipei Shi, Jingyuan Liu, Fuchao Zhang, Yuhao Mu, Fenwen Liu, Xinyu Liu, Sheng Hao, Yue HF&HV Device and Integrate Center Institute of Microelectronics Chinese Academy of Science Beijing China State Key Laboratory of WBS Devices and Integrated Technology Nanjing Electronic Devices Institute Nanjing China Center for Power Electronics Systems Virginia Tech BlacksburgVA United States Institute of Technological Sciences Wuhan University Wuhan China TJ Innovative Semiconductor Substrate Technology Co. Ltd Tianjing China Xidian University Xi’an China
The SiC substrate cost accounts for >50% of final device cost, and its manufacturing suffers from a high carbon footprint. To address this challenge, this work demonstrates a novel 150 mm single-crystal SiC enginee... 详细信息
来源: 评论