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Improving the Operational Stability of the Sb2Se3-Based Self-Powered Photodetector via Interfacial Engineering

ACS applied materials & interfaces 2025年第22期17卷 2025 May 24页

作者： Jianpeng Li Wei Cheng Zixiu Cao Jiabin Dong Genyu Hu Rutao Meng Xuejun Xu Chuanyu Liu Han Xu Zhanpeng Zhang Xu Wu Li Wu Yi Zhang Institute of Photoelectronic Thin Film Devices and Technology State Key Laboratory of Photovoltaic Materials and Cells Tianjin Key Laboratory of Thin Film Devices and Technology and Engineering Research Center of Thin Film Optoelectronics Technology Ministry of Education Nankai University Tianjin 300350 China. Center for Interdisciplinary Science of Optical Quantum and NEMS Integration School of Physics Advanced Research Institute of Multidisciplinary Science Beijing Institute of Technology Beijing 100081 China. Key Laboratory of Weak-Light Nonlinear Photonics Ministry of Education School of Physics Nankai University Tianjin 300071 China.

Originating from photovoltaic devices, self-powered photodetectors (SPPDs) have low power consumption and show promising applications in photoelectric imaging and optical communications. Many efforts have been devoted to improving their photodetection performances, including responsivity, detectivity, and response time. However, work on their operational stability, one of the key parameters of applied PDs, is still rare. Here, using an interfacial engineering method, we improve the operational stability of the representative SbSe-based SPPD. The SbO modification layer is applied at the interface between the SbSe and TiO layers and characterized systematically. With the optimized fabrication of the SbO layer, the operational stability under both air ambient and underwater conditions is significantly enhanced. Moreover, the performances of the SPPD, including responsivity, detectivity, and response time, are improved to 0.45 A/W, 2.70 × 10 Jones, and 81.5/75.0 ns, respectively. Specifically, without encapsulation, the photoresponse and key photodetection parameters of the devices vary by only around ten percent after working underwater. Our work provides a facile and effective way to modify the interfacial properties of the SbSe heterostructure and improve the operational stability of the SPPD.

关键词： Sb2Se3 interfacial engineering operational stability photodetector self-powered

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Effect of Green Surfactant ADS on Properties of Copper CMP Slurry

Effect of Green Surfactant ADS on Properties of Copper CMP S...

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China Semiconductor technology International Conference (CSTIC)

作者： Jiahui Li Xinhuan Niu Ni Zhan Zheng Wu Bin Hu Jiakai Zhou Institute of Microelectronics Hebei University of Technology Tianjin China School of Electronics and Information Engineering Hebei University of Technology Tianjin China Tianjin Key Laboratory of Electronic Materials and Devices Tianjin China

ISBN: (数字)9798331513351

ISBN: (纸本)9798331513368

In copper (Cu) film chemical mechanical polishing (CMP) of integrated circuits, the surfactant can disperse the abrasive and enhance the stability of the slurry to achieve a more consistent material removal rate (MRR) and low surface roughness. In this paper, the roles of anionic surfactant ammonium dodecyl sulfate (ADS) and fatty alcohol polyether (JFCE) on the MRR, surface roughness and slurry stability of copper were studied. Compared with the JFCE, the same concentration of anionic surfactant ADS can promote the dispersion of SiO 2 abrasive particles more rapidly and form a stable suspension.

关键词： Integrated circuits Surface roughness Circuit stability Abrasives Rough surfaces Surfactants Copper Slurries Dispersion Chemicals

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Effect of Sulfur-Containing Corrosion Inhibitors on the Selection Ratio of Removal Rate for Ruthenium Based Copper Interconnects

Effect of Sulfur-Containing Corrosion Inhibitors on the Sele...

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China Semiconductor technology International Conference (CSTIC)

作者： Zheng Wu Xinhuan Niu Ni Zhan Jiahui Li Bin Hu Jiakai Zhou Institute of Microelectronics Hebei University of Technology Tianjin China School of Electronics and Information Engineering Hebei University of Technology Tianjin China Tianjin Key Laboratory of Electronic Materials and Devices Tianjin China

ISBN: (数字)9798331513351

ISBN: (纸本)9798331513368

As integrated circuit technology develops to nodes below 10 nm, the one-step chemical mechanical polishing (CMP) process for Cu films requires a high removal rate (RR) for copper (Cu) as an interconnection material, while maintaining a near-zero RR for ruthenium (Ru) employed as a barrier. This study studied the impact of two sulfur-containing corrosion inhibitors on the RR and selectivity of Cu/Ru. The results revealed that when using 3.5 wt% L-methionine (L-Met) as a corrosion inhibitor, the selectivity ratio of Cu/Ru RR reached 310, and the surface roughness (Sq) was effectively improved.

关键词： Corrosion inhibitors Ruthenium Integrated circuit interconnections Production Surface roughness Rough surfaces Copper Slurries Chemicals Testing

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High-breakdown-voltage （>3000 V） and low-power-dissipation Al0.3Ga0.7N/GaN/Al0.1Ga0.9N double-heterostructure HEMTs with Ohmic/Schottky hybrid drains and Al2O3/SiO2 passivation

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Science China(Information Sciences) 2023年第12期66卷 297-298页

作者： Yutong FAN Xi LIU Ren HUANG Yu WEN Weihang ZHANG Jincheng ZHANG Zhihong LIU Shenglei ZHAO Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices School of MicroelectronicsXidian University Guangzhou Wide Bandgap Semiconductor Innovation Center Guangzhou Institute of TechnologyXidian University

GaN power devices have broad application prospects in fast charging systems, power supplies, data centers, and electric vehicles due to their high critical breakdown field strength, high switching frequency, and high conversion efficiency [1–3]. AlGaN/GaN/AlGaN double-heterostructure(DH) high-electron-mobility transistors(HEMTs) have been extensively studied owing to their low leakage current and low off-state power dissipation.

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Exploring the Effect of Back-Gate Bias on Stability of DSOI SRAM-Based Physical Unclonable Function

Exploring the Effect of Back-Gate Bias on Stability of DSOI ...

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European Conference on Radiation and its Effects on Components and Systems (RADECS)

作者： Zexin Su Bo Li Hongyu Ren Shanshan Ma Gang Zhang Weidong Zhang Zhengsheng Han Key Laboratory of Science and Technology on Silicon Devices Chinese Academy of Sciences Institute of Microelectronics of the Chinese Academy of Sciences University of Chinese Academy of Sciences Beijing China Key Laboratory of Science and Technology on Silicon Devices Chinese Academy of Sciences Institute of Microelectronics of the Chinese Academy of Sciences Beijing China

Two types of SRAM PUF were tested under various back-gate bias. The bit error rate can be reduced by 4.1% and 11.46% through selecting appropriate transistor type and back-gate bias before and after radiation.

ISBN: (数字)9798331520441

ISBN: (纸本)9798331520458

关键词： Semiconductor device measurement Power measurement Bit error rate Random access memory Switches Physical unclonable function Threshold voltage Thermal noise Transistors Thermal stability

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Inter-Layer Dielectric Engineering for Monolithic Stacking 4F2-2 T0C DRAM with Channel-All-Around (CAA) IGZO FET to Achieve Good Reliability (>104 s Bias Stress, >1012 Cycles Endurance)

Inter-Layer Dielectric Engineering for Monolithic Stacking 4...

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International Electron devices Meeting (IEDM)

作者： Chuanke Chen Xinlv Duan Guanhua Yang Congyan Lu Di Geng Ling Li Ming Liu Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics of the Chinese Academy of Sciences Beijing China

ISBN: (纸本)9781665489607

To address the stacking requirement of $4F^{2}-2$ T0C DRAM with vertical channel-all-around (CAA) IGZO FETs, for the first time, the effect of inter-layer dielectric (ILD) on CAA-IGZO FETs has been studied by varying dielectric material and process. By using optimized ILD and IGZO deposition cycle ratio, CAA-IGZO FET with high reliability is obtained. The optimized device exhibits a ${V}_{th}$ shift of less than 25 mV after $10^{4}s$ bias stress and no significant degradation after 10 12 cycles endurance. Our results provide an important reference for facilitating the monolithic stacking of multilayer IGZO FETs to realize 3D DRAM.

关键词： Degradation Three-dimensional displays Field effect transistors Stacking Hydrogen Random access memory Logic gates

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Arrays of one-dimensional conducting channels in minimally twisted bilayer graphene

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Physical Review B 2024年第16期110卷 L161406页

作者： Zhe Hou Kai Yuan Hua Jiang School of Physics and Technology United Microelectronics Center Company Limited Chongqing 400030 China Interdisciplinary Center for Theoretical Physics and Information Sciences (ICTPIS) Institute for Nanoelectronic Devices and Quantum Computing and State Key Laboratory of Surface Physics

Minimally twisted bilayer graphene with interlayer potential asymmetry hosts one-dimensional topological helical states at domain walls between AB/BA-stacking regions. However, the nature of topological helical states' propagation remains elusive. Although it is widely believed that they form a two-dimensional triangular network, a few argue that they self-organize into one-dimensional topological zigzag modes that propagate independently. In this Letter, we propose a protocol based on a two-terminal twisted bilayer graphene nanoflake transport device and resolve this issue. Through rigorous calculations on the differential conductance and the nonequilibrium local density of states, we show that these topological helical states indeed self-construct the one-dimensional distorted topological zigzag modes, each bypassing the AA-stacking spots and propagating independently. By considering a long twisted bilayer graphene nanoflake, we obtain a nearly quantized conductance plateau with its value close to 1, 2, and 3 (in units of 2e2/h), which serves as a strong experimental sign for the existence of topological zigzag modes. Our work not only clarifies the propagation nature of the topological helical states, but also realizes an array of one-dimensional conducting channels on a two-dimensional platform. This work provides a way of engineering topological states intrinsic in twisted bilayer graphene.

关键词： Ballistic transport Edge states Electrical conductivity Twistronics Valley degrees of freedom Graphene Twisted bilayer graphene Band structure methods Nonequilibrium Green's function Tight-binding model

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Near-threshold-voltage operation in flash-based high-precision computing-in-memory to implement Poisson image editing

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Science China(Information Sciences) 2023年第12期66卷 261-266页

作者： Yang FENG Bing CHEN Mingfeng TANG Yueran QI Maoying BAI Chengcheng WANG Hai WANG Xuepeng ZHAN Junyu ZHANG Jing LIU Jixuan WU Jiezhi CHEN School of Information Science and Engineering Shandong University School of Micro-nano Electronics Zhejiang University Neumem Co. Ltd Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences

We propose a NOR flash-based computing-in-memory(CIM) to implement high-precision(32-bit) Poisson image editing, including the gradient operations and Laplace operation. To meet the requirements of image processing, CIM operation schemes and reliabilities are carefully studied and optimized,showing that the power consumption at the near-threshold-voltage(NTV) region can be as low as 40 fJ/bit,which is two orders lower than working at the saturation region. High-temperature retention, as well as various disturbs, are also analyzed. The proposed CIM scheme can be applied as an energy-efficient approach to construct the high-precision image processing accelerator.

关键词： NOR flash memory computing-in-memory variation Poisson image editing

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A Monolithic GaN LDO Based on 12 V/0.5 μm GaN-on-Si Power technology Achieving 20 ns Settling Time and 22 MHz UGF 16

A Monolithic GaN LDO Based on 12 V/0.5 μm GaN-on-Si Power T...

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16th IEEE International Conference on Solid-State and Integrated Circuit technology, ICSICT 2022

作者： Wang, Peng Jiang, Yi-Zhou Liu, Dong-Sheng Zhang, You Li, Wen-Hong Huang, Wei Xiao, Zhi-Qiang Qiu, Yi-Wu Zhou, Xin-Jie Yang, Hong-Qiang Zhang, Wei Fudan University State Key Laboratory of Asic and System Shanghai Institute of Intelligent Electronics & Systems School of Microelectronics Shanghai200433 China Wuxi Microelectronics Scientific and Research Center Wuxi214035 China University of Electronic Science and Technology of China The State Key Laboratory of Electronic Thin Films and Integrated Devices Chengdu610054 China

ISBN: (数字)9781665469067

ISBN: (纸本)9781665469067

In this paper, a fast transient response capacitor-less gallium nitride (GaN)-based LDO on the GaN smart power technology platform for GaN integrated power regulation application is first proposed. A proposed GaN error amplifier (EA) with bootstrapping technology can effectively boost the gain to 45 dB. By employing the EA and a regulator enhancement-mode HEMT, the LDO is able to achieve a 22 MHz unit gain frequency with a load capacitor and current ranging from 0 pF to10 pF and 250 μA to 100mA, respectively. And the short settling time (20 ns) for 50-100 mA load change in 10 ns edge-time without load capacitor manifests superior high-frequency performance compared to silicon-based LDO. The circuit further promotes the development of an all-GaN solution compact power management system with improved reliability and performance. © 2022 IEEE.

关键词： Gallium nitride

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Millimeter-Wave AlGaN/GaN HEMTs/Si Operated on 12V for 5G RF Handset Applications 16

Millimeter-Wave AlGaN/GaN HEMTs/Si Operated on 12V for 5G RF...

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16th IEEE International Conference on Solid-State and Integrated Circuit technology, ICSICT 2022

作者： Liu, Dong-Sheng Wang, Peng Jiang, Yi-Zhou Huang, Wei Xiao, Zhi-Qiang Yang, Hong-Qiang Zhang, Wei. Fudan University State Key Laboratory of Asic and System Shanghai Institute of Intelligent Electronics & Systems School of Microelectronics Shanghai200433 China Wuxi Microelectronics Scientific and Research Center Wuxi214035 China University of Electronic Science and Technology of China The State Key Laboratory of Electronic Thin Films and Integrated Devices Chengdu610054 China

ISBN: (数字)9781665469067

ISBN: (纸本)9781665469067

In this paper, a RF AlGaN/GaN high electron mobility transistor (HEMT) based on low voltage application of 5G RF handset, firstly fabricated on high-resistive silicon substrate is introduced, which uses Ni/Au as T-shaped gate structure and double-layer silicide as surface medium. The maximum output current density of the device is 1.07 A/mm at Vds = 12 V and Vgs = 2 V. fT = 27.8 GHz and BV (the breakdown voltage) = 35 V/μm are obtained for the 180-nm gate-length device with 1-μm source-to-gate spacing. © 2022 IEEE.

关键词： Silicides

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