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1.8-kV circular AlGaN/GaN/AlGaN double-heterostructure high electron mobility transistor

Chinese Physics B 2019年第2期28卷 391-394页

作者： Sheng-Lei Zhao Zhi-Zhe Wang Da-Zheng Chen Mao-Jun Wang Yang Dai Xiao-Hua Ma Jin-Cheng Zhang Yue Hao Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices School of MicroelectronicsXidian University China Electronic Product Reliability and Environmental Testing Research Institute Institute of Microelectronics Peking University School of Information Science and Technology Northwest University

In this paper, we present a 1.8-kV circular AlGaN/GaN/AlGaN double-heterostructure high electron mobility transistor(DH HEMT) with a gate-drain spacing L_(GD)= 18.8 μm. Compared with the regular DH HEMT, our circular structure has a high average breakdown electric-field strength that increases from 0.42 MV/cm to 0.96 MV/cm. The power figure of meritV_(BR)~2/RON for the circular HEMT is as high as 1.03 ×10~9 V^2·Ω^(-1)·cm^(-2). The divergence of electric field lines at the gate edge and no edge effect account for the breakdown enhancement capability of the circular structure. Experiments and analysis indicate that the circular structure is an effective method to modulate the electric field.

关键词： AlGaN/GaN/AlGaN DH HEMTs circular structure breakdown voltage

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Effects of MgO Thickness and Roughness on Perpendicular Magnetic Anisotropy in MgO/CoFeB/Ta Multilayers

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Chinese Physics Letters 2016年第10期33卷 128-131页

作者：刘毅于涛朱正勇钟汇才朱开贵 School of Physics and Nuclear Energy Engineering Beihang University Key Laboratory of Microelectronic Devices & Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences Integrated Circuit Advanced Process Center Institute of MicroelectronicsChinese Academy of Sciences Key Laboratory of Micro-nano Measurement-Manipulation and Physics(Ministry of Education) Beihang University

The dependence of perpendicular magnetic anisotropy （PMA） on the barrier layer MgO thickness in MgO/CoFeB /Ta multilayers is investigated. The results show that the strongest PMA occurs in a small window of about 2 4nm with the increase of MgO thickness from 1-1Onto. The crystalline degree of MgO and the change of interatomic distance along the out-of-plane direction may be the main reasons for the change of PMA in these multilayers. Moreover, the roughnesses of 2- and 4-nm-thick MgO samples are 3.163 and 1.8 nm, respectively, and both the samples show PMA. These results could be used to tune the magnetic characteristic of the ultra thin CoFeB film for future applications in perpendicular magnetic devices.

关键词： PMA MgO of Effects of MgO Thickness and Roughness on Perpendicular Magnetic Anisotropy in MgO/CoFeB/Ta Multilayers in nm Ta on

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Highly uniform and nonlinear selection device based on trapezoidal band structure for high density nano- crossbar memory array

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Nano Research 2017年第10期10卷 3295-3302页

作者： Qing Luo Xiaoxin Xu Hangbing Lv Tiancheng Gong Shibing Long Qi Liu Ling Li Ming Liu Key Laboratory of Microelectronics Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China University of Chinese Academy of Sciences Beijing 100049 China Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) Nanjing 211800 China

Crossbar array provides a cost-effective approach for achieving high-density integration of two-terminal functional devices. However, the ＂sneaking current problem＂, which can lead to read failure, is a severe challenge in crossbar arrays. To inhibit the sneaking current from unselected cells, the integration of individual selection devices is necessary. In this work, we report a novel TaOx-based selector exhibiting a trapezoidal band structure formed by tuning the concentration of defects in the oxide. Salient features such as a high current density （1 MA·cm^-2）, high selectivity （5 × 10^4）, low off-state current （-10 pA）, robust endurance （〉10^10）, self-compliance, and excellent uniformity were successfully achieved. The integrated one-selector one-resistor （1S1R） device exhibits high nonlinearity in the low resistance state （LRS）, which is quite effective in solving the sneaking current issue.

关键词： crossbar array selector trapezoidal barrier gradient oxygenconcentration high uniformity

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Effect of Mo capping layers thickness on the perpendicular magnetic anisotropy in MgO/CoFeB based top magnetic tunnel junction structure

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Chinese Physics B 2016年第11期25卷 558-562页

作者：刘毅朱开贵钟汇才朱正勇于涛马苏德 School of Physics and Nuclear Energy Engineering Beihang University Key Laboratory of Micro-nano Measurement-Manipulation and Physics Ministry of Education Beihang University Integrated Circuit Advanced Process Center Institute of Microelectronics Chinese Academy of Sciences Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences

A detailed study of the magnetic characterizations of the top structure MgO/CoFeB/Mo is *** samples show strong perpendicular magnetic anisotropy（PMA） when the thickness of CoFeB is 0.9 nm and 1.1 *** saturation magnetic moment and interface anisotropy constant are 1566 emu/cm3 and 3.75 erg/cm2,*** magnetic dead layer（MDL） is about 0.23 nm in this ***,strong capping layer thickness dependence is also *** strong PMA of 1.1 nm CoFeB only exists in a Mo cap layer thickness window of 1.2-2 *** maintain PMA,the metal layer could not be too thin or thick in these *** oxidation and diffusion of the metal capping layer should be respectively responsibility for the degradation of PMA in these thin or thick metal capping layer samples.

关键词： anisotropy perpendicular junction annealing annealed thick saturation multilayer responsibility boron

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Characteristics and analysis of 4H-SiC PiN diodes with a carbon-implanted drift layer

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Journal of Semiconductors 2016年第4期37卷 77-81页

作者：冯江梅申华军马晓华白云吴佳李诚瞻刘可安刘新宇 School of Advanced Materials and Nanotechnology Key Laboratory of Wide Band-Gap Semiconductor Materials and DevicesXidian University Key Laboratory of Microelectronics Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Zhuzhou CSR Times Electric Co. Ltd

The characteristics of 4H-SiC PiN diodes with a carbon-implanted drift layer was investigated and the reason of characteristics improvement was analyzed. The forward voltage drops of the diodes with carbonimplanted drift layer were around 3.3 V, which is lower than that of devices without carbon implantation, the specific-on resistance was decreased from 9.35 to 4.38 mΩcm^2 at 100 A/cm^2, and the reverse leakage current was also decreased. The influence of carbon incorporation in the Si C crystalline grids was studied by using deep-level transient spectroscopy（DLTS）. The DLTS spectra revealed that the Z_（1/2） traps, which were regarded as the main lifetime limiting defects, were dramatically reduced. It is proposed that the reduction of Z_（1/2） traps can achieve longer carrier lifetime in the drift layer, which is beneficial to the performance of bipolar devices.

关键词： 4H-SiC carbon-implanted drift layer PiN diodes Z_（1/2） defects

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First-principles Theoretical Study on Band of Strained Wurtzite Nb-doped ZnO

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Journal of Wuhan University of technology(Materials Science) 2015年第3期30卷 467-472页

作者：乔丽萍 CHAI Changchun YANG Yintang YU Xinhai SHI Chunlei Xizang Key Laboratory of Optical Information Processing and Visualization Technology School of Information Engineering Xizang University for Nationalities Key Lab of Wide Band-Gap Semiconductor Materials and Devices School of Microelectronics Xidian University

The strain effects of the Zn1-xMgxO substrate on the bands structure of wurtzite Nb-doped Zn O bulk materials have been investigated using fi rst-principles calculations based on density functional theory. Firstly, the band gap increases gradually with increasing Nb contents in unstrained Nb-doped Zn O, which is consistent with the experimental results. Secondly, the band gap decreases with increasing substrate stress in Nb-doped Zn O/Zn1-xMgxO. Splitting energies between HHB（Heavy Hole Band） and LHB（Light Hole Band）, HHB and CSB（Crystal Splitting Band） in Zn0.9167Nb0.0833O/Zn1-xMgxO almost remain unchanged with increasing substrate stress, while decrease slightly in Zn0.875Nb0.125O/Zn1-xMgxO. In addition, detailed analysis of the strain effects on the effective masses of electron and hole in Nb-doped Zn O/Zn1-xMgxO is also given.

关键词： strain band gap Splitting energies effective mass

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Organic field effect transistors having hundreds of nanometers long channels

Organic field effect transistors having hundreds of nanomete...

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2008 MRS Spring Meeting

作者： Liwei, Shang Ming, Liu Deyu, Tu Lijuan, Zhen Ge, Liu Xinghua, Liu Key Laboratory of Nanofabrication and Novel Devices Integration Technology Institute of Microelectronics Chinese Academy of Sciences No.3 West road of Beitucheng Chaoyang Disctrict Beijing 100029 China

ISBN: (纸本)9781605608440

This work studied systemically the device characteristics when the OFETs' channels turn into hundreds of nm. Standard planar OFETs have been fabricated using electronic beam lithography. Copper phthalocyanine is used as the semiconductor materials. When reduce the L to about 300 nm will lead an abrupt degradation of device performance. The ratio of Ion/Ioff turns from several hundreds into couple of tens. And when change the L to about 100 nm, the mobility turns from 10-2 cm2/Vs into 10 -5 cm2/Vs, and the threshold voltage turns from about 12 V into 36 V. These abrupt changes are due to the changes of interface between active layer and insulator layer caused by the reducing the L to close to the grain size. © 2008 Materials Research Society.

关键词： Organic field effect transistors

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Characterization of vertical Au/β-Ga_2O_3 single-crystal Schottky photodiodes with MBE-grown high-resistivity epitaxial layer

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Chinese Physics B 2016年第1期25卷 757-761页

作者：刘兴钊岳超夏长泰张万里 State Key Laboratory of Electronic Thin Films and Integrated Devices School of Microelectronics and Solid-State ElectronicsUniversity of Electronic Science and Technology of China Key Laboratory of Materials for High Power Laser Shanghai Institute of Optics and Fine MechanicsChinese Academy of Sciences

High-resistivity β-Ga203 thin films were grown on Si-doped n-type conductive β-Ga203 single crystals by molecular beam epitaxy （MBE）. Vertical-type Schottky diodes were fabricated, and the electrical properties of the Schottky diodes were studied in this letter. The ideality factor and the series resistance of the Schottky diodes were estimated to be about 1.4 and 4.6 x 10^6 %. The ionized donor concentration and the spreading voltage in the Schottky diodes region are about 4 x 10^18 cm-3 and 7.6 V, respectively. The ultra-violet （UV） photo-sensitivity of the Schottky diodes was demonstrated by a low-pressure mercury lamp illumination. A photoresponsivity of 1.8 A/W and an external quantum efficiency of 8.7 x 10%2% were observed at forward bias voltage of 3.8 V, the proper driving voltage of read-out integrated circuit for UV camera. The gain of the Schottky diode was attributed to the existence of a potential barrier in the i-n junction between the MBE-grown highly resistive β-Ga203 thin films and the n-type conductive β-Ga203 single-crystal substrate.

关键词： gallium oxides thin films Schottky diode ultraviolet photodetector

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Voltage-control oscillator based on Pt/C/NbO_x/TiN device with highly improved threshold switching performances

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Science China(Physics,Mechanics & Astronomy) 2019年第12期62卷 126-129页

作者： Wei Wang ZuHeng Wu Tuo Shi YongZhou Wang Sen Liu RongRong Cao Hui Xu Qi Liu QingJiang Li College of Electronic Science and Technology National University of Defense TechnologyChangsha 410073China Key Laboratory of Microelectronic Devices&Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China

Oscillator is a common key component of electronic *** periodic signal produced by the oscillator is generally required in various applications,such as the electronic system clock,electronic neurons,and the true random number generator system[1-6].Capacitors and inductors are usually utilized to generate periodic waveforms in the traditional oscillator,which greatly reduces integration and cannot be packaged into chips[2].Oscillators based on a memristor have been proposed as a solution to these issues[7-14].The memristor has attracted great attention and has been widely applied in many fields,such as memory,com?puting,security,etc.

关键词： oscillator system electronic

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Epitaxial growth and characterization of Gd_2O_3-doped HfO_2 film on Ge(001) substrates with zero interface layer

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Journal of Rare Earths 2013年第11期31卷 1092-1095页

作者：张心强屠海令魏峰熊玉华杨萌萌赵洪滨杜军王文武 Advanced Electronic Materials Institute General Research Institute for Nonferrous Metals National Engineering Research Center for Semiconductor Materials General Research Institute for Nonferrous Metals Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences

The GHO （Gd2O3-doped HfO2） films were epitaxially grown on Ge （001） substrates adopting cube-on-cube mode with zero interface layer using pulsed laser deposition （PLD）. Reflection high-energy electron diffraction （RHEED） and high-resolution transmission electron microscopy （HRTEM） observation revealed a sharp interface of GHO/Ge and orientation relationship corre-sponding to （001）GHO//（001）Ge and [011] GHO//[011]Ge. The band offset for GHO/Ge stack was evaluated to be 3.92 eV for va-lence band and 1.38 eV for conduction band by X-ray photoelectron spectrum. Small equivalent oxide thickness （0.49 nm） and inter-face state density （7×1011 cm-2） were achieved from Au/Ti/GHO/Ge/Al capacitors.

关键词： dielectric material epitaxial growth interface Gd203 HfO2 rare earths

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