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检索条件"机构=Key Laboratory of Microelectronics Devices and Integration Technology"
1308 条 记 录,以下是241-250 订阅
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1.8-kV circular AlGaN/GaN/AlGaN double-heterostructure high electron mobility transistor
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Chinese Physics B 2019年 第2期28卷 391-394页
作者: Sheng-Lei Zhao Zhi-Zhe Wang Da-Zheng Chen Mao-Jun Wang Yang Dai Xiao-Hua Ma Jin-Cheng Zhang Yue Hao Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices School of MicroelectronicsXidian University China Electronic Product Reliability and Environmental Testing Research Institute Institute of Microelectronics Peking University School of Information Science and Technology Northwest University
In this paper, we present a 1.8-kV circular AlGaN/GaN/AlGaN double-heterostructure high electron mobility transistor(DH HEMT) with a gate-drain spacing L_(GD)= 18.8 μm. Compared with the regular DH HEMT, our circular... 详细信息
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Effects of MgO Thickness and Roughness on Perpendicular Magnetic Anisotropy in MgO/CoFeB/Ta Multilayers
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Chinese Physics Letters 2016年 第10期33卷 128-131页
作者: 刘毅 于涛 朱正勇 钟汇才 朱开贵 School of Physics and Nuclear Energy Engineering Beihang University Key Laboratory of Microelectronic Devices & Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences Integrated Circuit Advanced Process Center Institute of MicroelectronicsChinese Academy of Sciences Key Laboratory of Micro-nano Measurement-Manipulation and Physics(Ministry of Education) Beihang University
The dependence of perpendicular magnetic anisotropy (PMA) on the barrier layer MgO thickness in MgO/CoFeB /Ta multilayers is investigated. The results show that the strongest PMA occurs in a small window of about 2 ... 详细信息
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Highly uniform and nonlinear selection device based on trapezoidal band structure for high density nano- crossbar memory array
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Nano Research 2017年 第10期10卷 3295-3302页
作者: Qing Luo Xiaoxin Xu Hangbing Lv Tiancheng Gong Shibing Long Qi Liu Ling Li Ming Liu Key Laboratory of Microelectronics Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China University of Chinese Academy of Sciences Beijing 100049 China Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) Nanjing 211800 China
Crossbar array provides a cost-effective approach for achieving high-density integration of two-terminal functional devices. However, the "sneaking current problem", which can lead to read failure, is a severe chall... 详细信息
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Effect of Mo capping layers thickness on the perpendicular magnetic anisotropy in MgO/CoFeB based top magnetic tunnel junction structure
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Chinese Physics B 2016年 第11期25卷 558-562页
作者: 刘毅 朱开贵 钟汇才 朱正勇 于涛 马苏德 School of Physics and Nuclear Energy Engineering Beihang University Key Laboratory of Micro-nano Measurement-Manipulation and Physics Ministry of Education Beihang University Integrated Circuit Advanced Process Center Institute of Microelectronics Chinese Academy of Sciences Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences
A detailed study of the magnetic characterizations of the top structure MgO/CoFeB/Mo is *** samples show strong perpendicular magnetic anisotropy(PMA) when the thickness of CoFeB is 0.9 nm and 1.1 *** saturation mag... 详细信息
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Characteristics and analysis of 4H-SiC PiN diodes with a carbon-implanted drift layer
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Journal of Semiconductors 2016年 第4期37卷 77-81页
作者: 冯江梅 申华军 马晓华 白云 吴佳 李诚瞻 刘可安 刘新宇 School of Advanced Materials and Nanotechnology Key Laboratory of Wide Band-Gap Semiconductor Materials and DevicesXidian University Key Laboratory of Microelectronics Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Zhuzhou CSR Times Electric Co. Ltd
The characteristics of 4H-SiC PiN diodes with a carbon-implanted drift layer was investigated and the reason of characteristics improvement was analyzed. The forward voltage drops of the diodes with carbonimplanted dr... 详细信息
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First-principles Theoretical Study on Band of Strained Wurtzite Nb-doped ZnO
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Journal of Wuhan University of technology(Materials Science) 2015年 第3期30卷 467-472页
作者: 乔丽萍 CHAI Changchun YANG Yintang YU Xinhai SHI Chunlei Xizang Key Laboratory of Optical Information Processing and Visualization Technology School of Information Engineering Xizang University for Nationalities Key Lab of Wide Band-Gap Semiconductor Materials and Devices School of Microelectronics Xidian University
The strain effects of the Zn1-xMgxO substrate on the bands structure of wurtzite Nb-doped Zn O bulk materials have been investigated using fi rst-principles calculations based on density functional theory. Firstly, th... 详细信息
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Organic field effect transistors having hundreds of nanometers long channels
Organic field effect transistors having hundreds of nanomete...
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2008 MRS Spring Meeting
作者: Liwei, Shang Ming, Liu Deyu, Tu Lijuan, Zhen Ge, Liu Xinghua, Liu Key Laboratory of Nanofabrication and Novel Devices Integration Technology Institute of Microelectronics Chinese Academy of Sciences No.3 West road of Beitucheng Chaoyang Disctrict Beijing 100029 China
This work studied systemically the device characteristics when the OFETs' channels turn into hundreds of nm. Standard planar OFETs have been fabricated using electronic beam lithography. Copper phthalocyanine is u... 详细信息
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Characterization of vertical Au/β-Ga_2O_3 single-crystal Schottky photodiodes with MBE-grown high-resistivity epitaxial layer
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Chinese Physics B 2016年 第1期25卷 757-761页
作者: 刘兴钊 岳超 夏长泰 张万里 State Key Laboratory of Electronic Thin Films and Integrated Devices School of Microelectronics and Solid-State ElectronicsUniversity of Electronic Science and Technology of China Key Laboratory of Materials for High Power Laser Shanghai Institute of Optics and Fine MechanicsChinese Academy of Sciences
High-resistivity β-Ga203 thin films were grown on Si-doped n-type conductive β-Ga203 single crystals by molecular beam epitaxy (MBE). Vertical-type Schottky diodes were fabricated, and the electrical properties of... 详细信息
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Voltage-control oscillator based on Pt/C/NbO_x/TiN device with highly improved threshold switching performances
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Science China(Physics,Mechanics & Astronomy) 2019年 第12期62卷 126-129页
作者: Wei Wang ZuHeng Wu Tuo Shi YongZhou Wang Sen Liu RongRong Cao Hui Xu Qi Liu QingJiang Li College of Electronic Science and Technology National University of Defense TechnologyChangsha 410073China Key Laboratory of Microelectronic Devices&Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China
Oscillator is a common key component of electronic *** periodic signal produced by the oscillator is generally required in various applications,such as the electronic system clock,electronic neurons,and the true rando... 详细信息
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Epitaxial growth and characterization of Gd_2O_3-doped HfO_2 film on Ge(001) substrates with zero interface layer
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Journal of Rare Earths 2013年 第11期31卷 1092-1095页
作者: 张心强 屠海令 魏峰 熊玉华 杨萌萌 赵洪滨 杜军 王文武 Advanced Electronic Materials Institute General Research Institute for Nonferrous Metals National Engineering Research Center for Semiconductor Materials General Research Institute for Nonferrous Metals Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences
The GHO (Gd2O3-doped HfO2) films were epitaxially grown on Ge (001) substrates adopting cube-on-cube mode with zero interface layer using pulsed laser deposition (PLD). Reflection high-energy electron diffracti... 详细信息
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