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Dependence of Tunneling Mechanism on Two-Dimensional Material Parameters: A High-Throughput Study

Physical Review Applied 2022年第6期17卷 064053-064053页

作者： Wenhan Zhou Hengze Qu Shiying Guo Bo Cai Hongting Chen Zhenhua Wu Haibo Zeng Shengli Zhang MIIT Key Laboratory of Advanced Display Materials and Devices College of Material Science and Engineering Nanjing University of Science and Technology Nanjing 210094 People’s Republic of China Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 People’s Republic of China

A band-to-band tunneling FET (TFET) with an atomical two-dimensional (2D) channel is a potential candidate for the next-generation electronic device in view of its steep subthreshold swing and low power consumption. However, how to establish a precise physical model between the band property of 2D channel materials and the device performance of 2D TFETs is the key to accelerate their practical applications. Herein, through high-throughput first-principles calculations, we study the tunneling transport properties of 44 representative 2D materials with four kinds of crystal system. Particularly, we propose a well-defined and striking exponential scaling law (SS=AeBmr+C) between the subthreshold swings (SSs) and reduced effective masses (mr) of 10-nm TFETs. According to the exponential model, 2D orthorhombic and trigonal crystal TFETs with the steep SS hold the reduced effective masses of more than 0.1 and 0.2m0, which could inhibit tunneling leakage current. These insights provide guidance for material screening in the construction of post-Moore 2D low-power transistors.

关键词： Ballistic transport Electronic structure 2-dimensional systems Field-effect transistors Band structure methods Density functional theory First-principles calculations

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Ingeniously designed Ni-Mo-S/ZnIn_(2)S_(4) composite for multi-photocatalytic reaction systems

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Chinese Chemical Letters 2022年第3期33卷 1468-1474页

作者： Jing Chen Yumei Tang Shihao Wang Lingbin Xie Cheng Chang Xiaolei Cheng Mingming Liu Longlu Wang Lianhui Wang College of Electronic and Optical Engineering&College of Microelectronics Jiangsu Province Engineering Research Center for Fabrication and Application of Special Optical Fiber Materials and DevicesNanjing University of Posts and TelecommunicationsNanjing 210023China State Key Laboratory of Organic Electronics and Information Displays&Jiangsu Key Laboratory for Biosensors Institute of Advanced Materials(IAM)&Institute of Flexible Electronics(Future Technology)Nanjing University of Posts and TelecommunicationsNanjing 210023China

Molybdenum disulfide (MoS_(2)) with low cost, high activity and high earth abundance has been found to be a promising catalyst for the hydrogen evolution reaction (HER), but its catalytic activity is considerably limited due to its inert basal planes. Here, through the combination of theory and experiment, we propose that doping Ni in MoS_(2) as catalyst can make it have excellent catalytic activity in different reaction systems. In the EY/TEOA system, the maximum hydrogen production rate of EY/Ni-Mo-S is 2.72 times higher than that of pure EY, which confirms the strong hydrogen evolution activity of Ni-Mo-S nanosheets as catalysts. In the lactic acid and Na_(2)S/Na_(2)SO_(3) systems, when Ni-Mo-S is used as co-catalyst to compound with ZnIn_(2)S_(4) (termed as Ni-Mo-S/ZnIn_(2)S_(4)), the maximum hydrogen evolution rates in the two systems are 5.28 and 2.33 times higher than those of pure ZnIn_(2)S_(4), respectively. The difference in HER enhancement is because different systems lead to different sources of protons, thus affecting hydrogen evolution activity. Theoretically, we further demonstrate that the Ni-Mo-S nanosheets have a narrower band gap than MoS_(2), which is conducive to the rapid transfer of charge carriers and thus result in multi-photocatalytic reaction systems with excellent activity. The proposed atomic doping strategy provides a simple and promising approach for the design of photocatalysts with high activity and stability in multi-reaction systems.

关键词： Molybdenum disulfide(MoS_(2)) Ni-Mo-S nanosheets Multi-reaction systems Hydrogen evolution reaction(HER) Atomic doping strategy

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An Artificial Neuromuscular Synapse Based on a Ferroelectric Pb(Zr1-xTix)O3/SiC Floating Gate Transistor 17

An Artificial Neuromuscular Synapse Based on a Ferroelectric...

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17th IEEE International Conference on Solid-State and Integrated Circuit technology, ICSICT 2024

作者： Liu, Yu Lin, Lin Wang, Xiang Zhong, Chengyan Guo, Junxiong Huang, Wen Guo, Yufeng College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing210023 China School of Integrated Circuit Science and Engineering University of Electronic Science and Technology of China State Key Laboratory of Electronic Thin Films and Integrated Devices Chengdu610054 China Institute of Advanced Study School of Electronic Information and Electrical Engineering Chengdu University Chengdu610106 China

ISBN: (纸本)9798350361834

Neuromuscular junctions (NMJs) are specialized synapses that enable the efficient transduction of neural signals into muscle contractions in biological systems. Desirable artificial NMJs aim to replicate biological synaptic plasticity and high-power actuation for advanced robotics and prosthetics, but face challenges in achieving sufficient flexibility, strength, and self-contained operation. Here, we report a novel artificial NMJ based on a silicon carbide (SiC) ferroelectric field-effect transistor. By integrating a ferroelectric floating gate dielectric with a wide-bandgap SiC transistor, we achieve a wide range of non-volatile conductance modulation, enabling the emulation of long-term synaptic plasticities. We demonstrate the PZT-SiC transistor's higher threshold voltage and lower operating currents compared to traditional SiC transistors, resulting in reduced power consumption. The device exhibits excellent synaptic plasticity, with the ability to modulate synaptic weights through successive test cycles and upon pulsatile stimulation. We showcase the potential of the PZT-SiC synaptic transistor through its application in convolutional image processing, where it successfully extracts horizontal and vertical features using Sobel kernels. Our work presents a promising hardware platform for efficient and scalable artificial NMJs, paving the way for advanced biohybrid systems and neuromorphic robots. © 2024 IEEE.

关键词： Gate dielectrics

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Novel Multifunctional Transient Voltage Suppressor technology for Modular EOS/ESD Protection Circuit Designs 35

Novel Multifunctional Transient Voltage Suppressor Technolog...

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35th International Symposium on Power Semiconductor devices and ICs, ISPSD 2023

作者： Qi, Zhao Qiao, Ming Wei, Jingqi Shi, Yonggang Chen, Hongquan Li, Zhaoji Zhang, Bo University of Electronic Science and Technology of China State Key Laboratory of Electronic Thin Films and Integrated Devices Chengdu China Chongqing Institute of Microelectronics Industry Technology Uestc Chongqing China Institute of Electronic and Information Engineering of Uestc in Guangdong Dongguan China Shenzhen Institute for Advanced Study University of Electronic Science and Technology of China Shenzhen China

ISBN: (纸本)9798350396829

Transient voltage suppressor (TVS) is a kind of widely-used protection device which can enhance system surge and electrostatic discharge (ESD) robustness in small PCB area. However, different TVS cannot be fabricated using same technology due to the huge characteristic difference, which brings technology complexity in multifunctional system. In order to unity the TVS designs, a novel multifunctional TVS technology which solves non-uniformity finger triggering, voltage stacking and low leakage modular assembly issues is proposed. By using this TVS technology, the low-capacitance TVS array gets the peak current (IPP)of 5 A under the line-line capacitance (CL-L) of 0.25 pF, 5 V power clamp gets the IPP of 10 A with the dynamic resistance (Rdyn) of 0.15 Ohm, high-voltage protection diode gets the breakdown voltage (BV) of 70 V by stacking eight units and the surge TVS realizes IPP of 320 A by increasing finger amount without non-uniformity triggering. © 2023 IEEE.

关键词： Capacitance

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A Novel Dual-Mode Dual Trench MOSFET With Self-Adjustable Field Plate for Low EMI Noise and High Dynamic Avalanche Robustness

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IEEE Transactions on Device and Materials Reliability 2025年

作者： Wang, Tongyang Li, Zehong Zhao, Yishang Xia, Ziming Zheng, Yige Ye, Jun Xiao, Xuan University of Electronic Science and Technology of China State Key Laboratory of Electronic Thin Films and Integrated Devices Chengdu610054 China UESTC Chongqing Institute of Microelect ronics Industry Technology China China Resources Microelectronics Limited Chongqing China

A novel dual-mode dual trench MOSFET (DDT-MOSFET) featuring shorted P-doping field plate (PFP) and N-doping field plate (NFP) is proposed. A parasitic depletion region capacitor and a parasitic MOSFET are introduced in the self-adjustable field plate (SFP). During turn-on, the DDT-MOSFET is in the split gate trench (SGT) mode with an electron inversion layer in the PFP, achieving low Cgd. During turn-off, the DDT-MOSFET is in the insulator pillar superjunction (I-SJ) mode with depleted PFP, achieving low electromagnetic interference (EMI) noise and high breakdown voltage (BV). Mode conversion is realized by the introduction of the SFP. By TCAD simulation, during turn-off, the proposed structure exhibits 33.9% improvement in BV, 42.8% reduction in maximum dID/dt and 44.1% reduction in overshoot voltage (VO) with same Eoff, reducing EMI noise and improving dynamic avalanche robustness without deterioration of other electrical characteristics. © 2001-2011 IEEE.

关键词： MOSFET devices

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Terahertz metasurface polarization detection employing vortex pattern recognition

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Photonics Research 2023年第12期11卷 2256-2263页

作者： CHENGLONG ZHENG JINGYU LIU HUI LI MENGGUANG WANG HUAPING ZANG YAN ZHANG JIANQUAN YAO Key Laboratory of Material Physics Ministry of EducationSchool of Physics and MicroelectronicsZhengzhou UniversityZhengzhou 450052China Beijing Key Laboratory for Metamaterials and Devices Key Laboratory of Terahertz OptoelectronicsMinistry of Educationand Beijing AdvancedInnovation Center for Imaging TechnologyDepartment of PhysicsCapital Normal UniversityBeijing 100048China Key Laboratory of Opto-Electronics Information Technology(Tianjin University) Ministry of EducationSchool of Precision Instruments andOpto-Electronics EngineeringTianjin UniversityTianjin 300072China State Key Laboratory of Modern Optical Instrumentation College of Optical Science and EngineeringZhejiang UniversityHangzhou 310027China

The manipulation and detection of polarization states play a crucial role in the application of 6G terahertz ***,the development of compact and versatile polarization detection devices capable of detecting arbitrary polarizations continues to be a challenging ***,we demonstrate a terahertz polarization detection scheme by performing mode purity analysis and multidimensional analysis of the transmitted vortex *** power of the proposed polarization recognition is verified by using three polarization trajectories,including linear polarizations,circular polarizations,and elliptical *** the reconstructed complete polarization parameters,the detected polarization states are characterized using polarization ellipses,Poincarésphere,and full-Stokes *** experimental results validate the power of this scheme in polarization *** scheme holds promise for applications in polarization imaging and terahertz communication.

关键词： polarization scheme pattern

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Arbitrary noise generator based on solid-state spin systems

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Physical Review Applied 2024年第6期22卷 064007-064007页

作者： Yifan Zhang Yue Fu Bo Zhang Center for Quantum Technology Research and Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurements (MOE) School of Physics Beijing Institute of Technology Beijing 100081 China Center for Interdisciplinary Science of Optical Quantum and NEMS Integration School of Physics Beijing Institute of Technology Beijing 100081 China School of Integrated Circuits and Electronics MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices Beijing Institute of Technology Beijing 100081 China MIIT Key Laboratory of Complex-field Intelligent Exploration Beijing Institute of Technology Beijing 100081 China

A controlled noise environment provides a unique platform for the investigation of various quantum technologies. Here, we demonstrate a technique to engineer arbitrary unitary baths in quantum systems with solid-state spin systems. A wide variety of classical noise models, including the generation of dephasing noise and amplitude-damping noise was realized through precise modulation of microwave signals. By measuring the power spectral density of the noise with the aid of single nitrogen-vacancy (N-V) color centers in diamond, we confirm that the generated noise closely matches the theoretical expectations. This technique serves as a powerful toolkit for validating quantum control protocols, simulating decoherence processes in other quantum systems, and generating baths essential for studying quantum thermodynamics.

关键词： Quantum control Nitrogen vacancy centers in diamond Optically detected magnetic resonance Spin noise spectroscopy

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Doped VS2 as a high-performance electrode material for rechargeable Mg-ion batteries

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Physical Review Applied 2024年第2期21卷 024038-024038页

作者： Yingfang Li Kunlun Wu Haoran Luo Meng Li Lei Wang Kuan Sun Yujie Zheng National Innovation Center for Industry-Education Integration of Energy Storage Technology MOE Key Laboratory of Low-grade Energy Utilization Technologies and Systems CQU-NUS Renewable Energy Materials & Devices Joint Laboratory School of Energy & Power Engineering Chongqing University Chongqing 400044 China Chongqing Key Laboratory of Intelligent Equipment Safety and Reliable Technology Chongqing Ceprei Industrial Technology Institute Co. Ltd. Chongqing 400000 China

Two-dimensional (2D) vanadium disulfide (VS2) can serve as a universal host for reversible intercalation and deintercalation of alkali and alkaline earth metal ions. However, its practical application in rechargeable metal-ion batteries is limited by its low energy density (559 Wh g−1). Herein, the effects of O doping and C,O codoping on the electrochemical performance of 2D VS2 used as anode for magnesium-ion batteries (MIBs) are investigated by first-principles calculations. Values of both the energy density and specific capacity increase with increasing O-doping concentration, and those of VSO are 2.17 times and 1.16 times higher than those of VS2, respectively. However, due to the strong bond between O and Mg, the diffusion barrier of Mg atoms on 2D VSO is relatively high (1.02 eV). Further introduction of C (VSO0.75C0.25) can reduce the diffusion barrier of Mg atoms (0.80 eV) to a level comparable to that of VS2. Meanwhile, the values of energy density and specific capacity of VSO0.75C0.25 are 1.53 times and 1.17 times those of VS2. Our results suggest that O doping and C,O codoping of 2D VS2 are effective strategies to improve the overall performance of MIBs and it should be possible to generalize such doping strategies to other rechargeable MIBs based on 2D transition metal dichalcogenides.

关键词： Batteries Capacitance Charge density waves Electrical conductivity Electrochemical properties Energy materials Transition metal dichalcogenides Density functional calculations

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Effective gate length model for asymmetrical gate-all-around silicon nanowire transistors

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Science China(Information Sciences) 2020年第10期63卷 288-290页

作者： Xiaoqiao DONG Ming LI Wanrong ZHANG Yuancheng YANG Gong CHEN Shuang SUN Jianing WANG Xiaoyan XU Xia AN Key Laboratory of Microelectronic Devices and Circuits Institute of MicroelectronicsPeking University Faculty of Information Technology Beijing University of Technology

Dear editor,With the development of VLSI technology,gateall-around (GAA) silicon nano wire transistor(SNWT) has emerged as one of the most potential candidates for ultimately scaled CMOS devices at the end of the technology *** pioneering research studies have demonstrated super scalability and high performance with GAA SNWT [1-3].Whereas,in the practical fabrica-

关键词： gate-all-around nanowire effective gate length effective model asymmetrical

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Piezovalley effect and magnetovalley coupling in altermagnetic semiconductors studied by first-principles calculations

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Physical Review B 2025年第13期111卷 134429-134429页

作者： Weifeng Xie Xiong Xu Yunliang Yue Huayan Xia Hui Wang School of Microelectronics and Physics Hunan University of Technology and Business Changsha 410205 China School of Physics Hunan Key Laboratory of Super Microstructure and Ultrafast Process Hunan Key Laboratory of Nanophotonics and Devices State Key Laboratory of Powder Metallurgy Central South University Changsha 410083 China College of Information Engineering Yangzhou University Yangzhou 225127 China

Clarifying the physical origin of valley polarization and exploring promising ferrovalley materials are conducive to the application of valley degrees of freedom in the field of information storage. Here, we explore two altermagnetic semiconductors (monolayers Nb2Se2O and Nb2SeTeO) with Néel temperature above room temperature based on first-principles calculations. We find that uniaxial strain induces valley polarization without spin-orbital coupling (SOC) in altermagnets owing to the piezovalley effect, while uniaxial compressive strain transforms the intrinsic ferrovalley semiconductor into a semimetal, half metal, and metal. Moreover, moderate biaxial compressive strain renders Janus monolayer Nb2SeTeO to robust Dirac-conelike band dispersion. The SOC and intrinsic in-plane magnetocrystalline anisotropy energy induce Dirac-conelike altermagnets to generate apparent valley polarization through magnetovalley coupling. In terms of SOC perturbation, we elucidate the physical mechanism behind in-plane magnetization-induced valley polarization and demonstrate that valley polarization is negatively correlated with the band gap. The present work reveals the physical origin of valley polarization in altermagnets and expands the application of ferrovalley at room temperature in valleytronics.

关键词： Degrees of freedom (mechanics)

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