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69th Device Research Conference, DRC 2011

作者： Song, Yi Zhou, Huajie Xu, Qiuxia Luo, Jun Zhao, Chao Liang, Qingqing Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing1 00029 China

ISBN: (纸本)9781612842417

We demonstrate high performance silicon nanowire gate-all-around MOSFETs (SNWFETs) fabricated on bulk Si by a novel top-down CMOS-compatible method. The fabricated N- and P-type SNWFETs of sub-50 nm gate length and of ∼5 nm in diameter show excellent short channel effects (SCEs) immunity with subthreshold slope (SS) of 90/69 mV/dec, DIBL of 47/10 mV/V, and high driving current of 2×103/5.4×103 μA/μm at 0.1 nA/μm off-current. © 2011 IEEE.

关键词： Nanowires

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Research on Kalman filter for one-dimensional discrete data

Research on Kalman filter for one-dimensional discrete data

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2021 International Conference on Information technology and Intelligent Control, CITIC 2021

作者： Wei, Fan Zhang, Zupei Jia, Kunpeng School of Computing Xi'an Shiyou University Shanxi Xi'an710065 China Key Laboratory of Microelectronic Devices and Integration Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China

Kalman filter processes the input and observation signals with noise on the basis of linear state space representation to obtain the system state or real signal. In the one-dimensional model, due to the lack of multi-dimensional description of the target, the prior estimate of the state is often the measured value of the previous moment. When the target state changes, the divergence phenomenon will occur. Aiming at the problem that the one-dimensional traditional Kalman filter lacks the target observation dimension, which leads to the divergence or imprecision of the filter, this paper focuses on improving the estimation method of the target state, and proposes a real-time prediction model based on the cascade structure. This model can improve the response of Kalman filter to the change of target state and dynamically adjust the Kalman iterative domain to improve the measurement accuracy. The digital signal filtering simulation is carried out and the performance of the filter is verified based on LabVIEW. Experimental results show that the algorithm can maintain the accuracy and real-time performance of filtering when only one dimension observation results are obtained. © 2021 Institute of Physics Publishing. All rights reserved.

关键词： Kalman filters

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A 6-GHz ROM suitable for DDFS application in GaAs HBT technology

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Chinese Science Bulletin 2011年第21期56卷 2291-2296页

作者： CHEN JianWu WANG Li WU DanYu CHEN GaoPeng JIN Zhi LIU XinYu Institute of Microelectronics Chinese Academy of SciencesBeijing 100029China Key Laboratory of Microelectronics Devices & Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China Science and Technology Information Research Center PLA General Armament DepartmentBeijing 100142China

Read-only memory (ROM) is widely implemented as a phase-to-amplitude mapping block in direct digital frequency synthesizers (DDFS).This paper derives an equivalent model for the ROM in a DDFS to analyze and reduce the access time that is critical to the performance of the ***,the signal skew observed in the simulation waveform is *** proposed 64×3-bit ROM is integrated as a part of an 8-bit DDFS,which operates functionally at 6 *** results demonstrate the improvement in the spur free dynamic range.

关键词：直接数字频率合成器 ROM GHz GaAs 应用程序 HBT 技术只读存储器

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Experimental investigation on the instability for NiO/β-Ga_(2)O_(3) heterojunction-gate FETs under negative bias stress

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Journal of Semiconductors 2023年第7期44卷 32-36页

作者： Zhuolin Jiang Xiangnan Li Xuanze Zhou Yuxi Wei Jie Wei Guangwei Xu Shibing Long Xiaorong Luo State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of ChinaChengdu 610054China School of Microelectronics University of Science and Technology of ChinaHefei 230026China

A NiO/β-Ga_(2)O_(3) heterojunction-gate field effect transistor(HJ-FET)is fabricated and it_(s)instability mechanisms are exper-imentally investigated under different gate stress voltage(V_(G,s))and stress times(t_(s)).Two different degradation mechanisms of the devices under negative bias stress(NBS)are *** low V_(G,s)for a short t_(s),NiO bulk traps trapping/de-trapping elec-trons are responsible for decrease/recovery of the leakage current,*** higher V_(G,s)or long t_(s),the device transfer char-acteristic curves and threshold voltage(V_(TH))are almost permanently negatively *** is because the interface dipoles are almost permanently ionized and neutralize the ionized charges in the space charge region(SCR)across the heterojunction inter-face,resulting in a narrowing *** provides an important theoretical guide to study the reliability of NiO/β-Ga_(2)O_(3) hetero-junction devices in power electronic applications.

关键词： NiO/β-Ga_(2)O_(3)heterojunction FET NBS instability bulk traps interface dipoles

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First Demonstration of High-Sensitivity (NEP-1/2) Back-Illuminated Active-Matrix Deep UV Image Sensor by Monolithic integration of Ga2O3Photodetectors and Oxide Thin-Film-Transistors

First Demonstration of High-Sensitivity (NEP-1/2) Back-Illum...

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2022 IEEE Symposium on VLSI technology and Circuits, VLSI technology and Circuits 2022

作者： Qin, Yuan Lu, Congyan Yu, Zhaoan Yao, Zhihong Wu, Feihong Dong, Danian Zhao, Xiaolong Xu, Guangwei Zhang, Yuhao Long, Shibing Li, Ling Liu, Ming Institute of Microelectronics of Chinese Academy of Sciences Key Laboratory of Microelectronics Devices & Integration Technology Beijing China School of Microelectronics University of Science and Technology of China Hefei China Virginia Polytechnic Institute and State University Center of Power Electronics Systems BlacksburgVA United States

ISBN: (纸本)9781665497725

We, for the first time, demonstrated a back-illuminated active-matrix deep UV (DUV) image sensor by monolithically integrating an ultra-wide bandgap (UWBG) Ga2O3 photodetector (PD) array and IGZO thin-film-transistors (TFT) based on a low temperature back-end-of-line (BEOL) process. Benefited from the low off-state current of 10-13A, high on/off ratio of 5×108, and high stability of IGZO TFTs, the integrated PD/TFT sensor cell presents super-high sensitivity with NEP down to 1fWHz-1/2 with a high responsivity and specific detectivity of 302A/W and 1.7×1015Jones, respectively. The 32×32 DUV image sensor shows excellent uniformity and demonstrates a superior image recognition ability with light intensity down to 2 W/cm2. This scalable, high-resolution DUV image sensor shows great promise for advanced imaging and machine vision applications. © 2022 IEEE.

关键词： Gallium compounds

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SAPTL –based Robust Sub-threshold Adder Circuit Design 13

SAPTL –based Robust Sub-threshold Adder Circuit Design

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2016 13th IEEE International Conference on Solid-State and Integrated Circuit technology (ICSICT)

作者： Qi Zhang Yuping Wu Lan Chen Xuelian Zhang Weicheng Shi Institute of Microelectronics of Chinese Academy of Sciences Beijing Key Laboratory of 3D & Nano IC Design Automation Technology Key Laboratory of Microelectronic Devices & Integrated Technology CAS

ISBN: (纸本)9781467397209

Process variation results in up to an order of magnitude variation in on/off ratios, which significantly depresses the yield of the sub-threshold circuits. This paper presents low power sub-threshold adders using sense amplifier-based pass transistor logic(SAPTL). Based on the simulations in 130 nm CMOS process, the proposed two-phase synchronous SAPTL adder exhibits stronger robustness to process variations when compared to the ripple carry adder using standard cell circuits. And the adder based on ADSA-SAPTL features much less power consumption than synchronous SAPTL adder.

关键词： based Robust Sub-threshold Adder Circuit Design SAPTL

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Ordered InAs Quantum Dots with Controllable Periods Grown on Stripe-Patterned GaAs Substrates

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Chinese Physics Letters 2007年第9期24卷 2689-2691页

作者：任芸芸徐波王占国刘明龙世兵 Laboratory of Semiconductor Materials Science Institute of Semiconductors Chinese Academy of Sciences PO Box 912 Beijing 100083 Key Laboratory of Nano-Fabrication and Novel Devices Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029

GaAs （001） substrates are patterned by electron beam lithography and wet chemical etching to control the nucleation of lnAs quantum dots （QDs）. InAs dots are grown on the stripe-patterned substrates by solid source molecular beam epitaxy. A thick buffer layer is deposited on the strip pattern before the deposition of InAs. To enhance the surface diffusion length of the In atoms, InAs is deposited with low growth rate and low As pressure. The AFM images show that distinct one-dimensionally ordered InAs QDs with homogeneous size distribution are created, and the QDs preferentiMly nucleate along the trench. With the increasing amount of deposited InAs and the spacing of the trenches, a number of QDs are formed beside the trenches. The distribution of additional QDs is long-range ordered, always along the trenchs rather than across the spacing regions.

关键词： GE ISLANDS TRANSITION

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Total Ionizing Dose Effects of 55-nm Silicon-Oxide-Nitride-Oxide-Silicon Charge Trapping Memory in Pulse and DC Modes

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Chinese Physics Letters 2018年第7期35卷 130-133页

作者：李梅毕津顺徐彦楠李博习凯王海滨刘璟李金季兰龙骆丽刘明 Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 University of Chinese Academy of Sciences Beijing 100049 School of Internet of Things Engineering HoHai University Changzhou 213022 Beijing Jiaotong University Beijing 100044

The （60）Co-γ ray total ionizing dose radiation responses of 55-nm silicon-oxide-nitride-oxide-silicon（SONOS） memory cells in pulse mode（programmed/erased with pulse voltage） and dc mode（programmed/erased with direct voltage sweeping） are investigated. The threshold voltage and off-state current of memory cells before and after radiation are measured. The experimental results show that the memory cells in pulse mode have a better radiation-hard capability. The normalized memory window still remains at 60% for cells in dc mode and 76% for cells in pulse mode after 300 krad（Si） radiation. The charge loss process physical mechanisms of programmed SONOS devices during radiation are analyzed.

关键词： Cells

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CMN: a co-designed neural architecture search for efficient computing-in-memory-based mixture-of-experts

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Science China(Information Sciences) 2024年第10期67卷 100-114页

作者： Shihao HAN Sishuo LIU Shucheng DU Mingzi LI Zijian YE Xiaoxin XU Yi LI Zhongrui WANG Dashan SHANG Department of Electrical and Electronic Engineering The University of Hong Kong ACCESS-AI Chip Center for Emerging Smart Systems InnoHK Centers Key Lab of Fabrication Technologies for Integrated Circuits Chinese Academy of Sciences Laboratory of Microelectronics Devices and Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences University of Chinese Academy of Sciences School of Microelectronics Southern University of Science and Technology

Artificial intelligence(AI) has experienced substantial advancements recently, notably with the advent of large-scale language models(LLMs) employing mixture-of-experts(MoE) techniques, exhibiting human-like cognitive skills. As a promising hardware solution for edge MoE implementations, the computing-in-memory(CIM) architecture collocates memory and computing within a single device, significantly reducing the data movement and the associated energy consumption. However, due to diverse edge application scenarios and constraints, determining the optimal network structures for MoE, such as the expert's location,quantity, and dimension on CIM systems remains elusive. To this end, we introduce a software-hardware co-designed neural architecture search(NAS) framework, CIM-based MoE NAS(CMN), focusing on identifying a high-performing MoE structure under specific hardware constraints. The results of the NYUD-v2 dataset segmentation on the RRAM(SRAM) CIM system reveal that CMN can discover optimized MoE configurations under energy, latency, and performance constraints, achieving 29.67×(43.10×) energy savings,175.44×(109.89×) speedup, and 12.24× smaller model size compared to the baseline MoE-enabled Visual Transformer, respectively. This co-design opens up an avenue toward high-performance MoE deployments in edge CIM systems.

关键词： mixture-of-experts computing-in-memory neural architecture search resistive random-access memory static random-access memory

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X-ray irradiation-induced degradation in Hf_(0.5)Zr_(0.5)O_(2) fully depleted silicon-on-insulator n-type metal oxide semiconductor field-effect transistors

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Rare Metals 2021年第11期40卷 3299-3307页

作者： Yu-Dong Li Qing-Zhu Zhang Fan-Yu Liu Zhao-Hao Zhang Feng-Yuan Zhang Hong-Bin Zhao Bo Li Jiang Yan Key Laboratory of Microelectronics Devices and Integrated Technology Integrated Circuit Advanced Process Center(ICAC)Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China University of Chinese Academy of Sciences Beijing 100049China State Key Laboratory of Advanced Materials for Smart Sensing GRINM Group Co.LtdBeijing 100088China Institute of Microelectronics Chinese Academy of SciencesBeijing 100029China School of Information Science and Technology North China University of TechnologyBeijing 100144China

The n-type ultrathin fully depleted silicon-on-insulator(FDSOI) metal-oxide-semiconductor field-effect transistors(MOSFETs),with a Hf_(0.5)Zr_(0.5)O_(2) high dielectric permittivity(high-k) dielectric as gate insulator,were *** total ionizing dose effects were investigated,and an X-ray radiation dose up to 1500 krad(Si) was applied for both long-and short-channel *** short-channel devices(0.025-0.100 μm) exhibited less irradiation sensitivity compared with the long-channel devices(0.35-16 μm),leading to a 71% reduction in the irradiation-induced drain current growth and a 26% decrease in the shift of the threshold *** was experimentally demonstrated that the OFF mode is the worst case among the three working conditions(OFF,ON and A110) for short-channel ***,the determined effective electron mobility was enhanced by 38% after X-ray irradiation,attributed to the different compensations for charges triggered by radiation between the highk dielectric and buried *** extracting the carrier mobility,gate length modulation,and source/drain(S/D)parasitic resistance,the degradation mechanism on X-ray irradiation was ***,the split capacitance-voltage measurements were used to validate the analysis.

关键词： Total ionizing dose Fully depleted silicon-on-insulator(FDSOI) Metal–oxide–semiconductor field-effect transistor(MOSFET) High-k Hf_(0.5)Zr_(0.5)O_(2)

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