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检索条件"机构=Key Laboratory of Microelectronics Devices and Integration Technology"
1308 条 记 录,以下是261-270 订阅
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High performance N- and P-type gate-all-around nanowire MOSFETs fabricated on bulk Si by CMOS-compatible process
High performance N- and P-type gate-all-around nanowire MOSF...
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69th Device Research Conference, DRC 2011
作者: Song, Yi Zhou, Huajie Xu, Qiuxia Luo, Jun Zhao, Chao Liang, Qingqing Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing1 00029 China
We demonstrate high performance silicon nanowire gate-all-around MOSFETs (SNWFETs) fabricated on bulk Si by a novel top-down CMOS-compatible method. The fabricated N- and P-type SNWFETs of sub-50 nm gate length and of... 详细信息
来源: 评论
Research on Kalman filter for one-dimensional discrete data
Research on Kalman filter for one-dimensional discrete data
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2021 International Conference on Information technology and Intelligent Control, CITIC 2021
作者: Wei, Fan Zhang, Zupei Jia, Kunpeng School of Computing Xi'an Shiyou University Shanxi Xi'an710065 China Key Laboratory of Microelectronic Devices and Integration Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China
Kalman filter processes the input and observation signals with noise on the basis of linear state space representation to obtain the system state or real signal. In the one-dimensional model, due to the lack of multi-... 详细信息
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A 6-GHz ROM suitable for DDFS application in GaAs HBT technology
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Chinese Science Bulletin 2011年 第21期56卷 2291-2296页
作者: CHEN JianWu WANG Li WU DanYu CHEN GaoPeng JIN Zhi LIU XinYu Institute of Microelectronics Chinese Academy of SciencesBeijing 100029China Key Laboratory of Microelectronics Devices & Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China Science and Technology Information Research Center PLA General Armament DepartmentBeijing 100142China
Read-only memory (ROM) is widely implemented as a phase-to-amplitude mapping block in direct digital frequency synthesizers (DDFS).This paper derives an equivalent model for the ROM in a DDFS to analyze and reduce the... 详细信息
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Experimental investigation on the instability for NiO/β-Ga_(2)O_(3) heterojunction-gate FETs under negative bias stress
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Journal of Semiconductors 2023年 第7期44卷 32-36页
作者: Zhuolin Jiang Xiangnan Li Xuanze Zhou Yuxi Wei Jie Wei Guangwei Xu Shibing Long Xiaorong Luo State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of ChinaChengdu 610054China School of Microelectronics University of Science and Technology of ChinaHefei 230026China
A NiO/β-Ga_(2)O_(3) heterojunction-gate field effect transistor(HJ-FET)is fabricated and it_(s)instability mechanisms are exper-imentally investigated under different gate stress voltage(V_(G,s))and stress times(t_(s... 详细信息
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First Demonstration of High-Sensitivity (NEP-1/2) Back-Illuminated Active-Matrix Deep UV Image Sensor by Monolithic integration of Ga2O3Photodetectors and Oxide Thin-Film-Transistors
First Demonstration of High-Sensitivity (NEP-1/2) Back-Illum...
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2022 IEEE Symposium on VLSI technology and Circuits, VLSI technology and Circuits 2022
作者: Qin, Yuan Lu, Congyan Yu, Zhaoan Yao, Zhihong Wu, Feihong Dong, Danian Zhao, Xiaolong Xu, Guangwei Zhang, Yuhao Long, Shibing Li, Ling Liu, Ming Institute of Microelectronics of Chinese Academy of Sciences Key Laboratory of Microelectronics Devices & Integration Technology Beijing China School of Microelectronics University of Science and Technology of China Hefei China Virginia Polytechnic Institute and State University Center of Power Electronics Systems BlacksburgVA United States
We, for the first time, demonstrated a back-illuminated active-matrix deep UV (DUV) image sensor by monolithically integrating an ultra-wide bandgap (UWBG) Ga2O3 photodetector (PD) array and IGZO thin-film-transistors... 详细信息
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SAPTL –based Robust Sub-threshold Adder Circuit Design  13
SAPTL –based Robust Sub-threshold Adder Circuit Design
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2016 13th IEEE International Conference on Solid-State and Integrated Circuit technology (ICSICT)
作者: Qi Zhang Yuping Wu Lan Chen Xuelian Zhang Weicheng Shi Institute of Microelectronics of Chinese Academy of Sciences Beijing Key Laboratory of 3D & Nano IC Design Automation Technology Key Laboratory of Microelectronic Devices & Integrated Technology CAS
Process variation results in up to an order of magnitude variation in on/off ratios, which significantly depresses the yield of the sub-threshold circuits. This paper presents low power sub-threshold adders using sens... 详细信息
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Ordered InAs Quantum Dots with Controllable Periods Grown on Stripe-Patterned GaAs Substrates
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Chinese Physics Letters 2007年 第9期24卷 2689-2691页
作者: 任芸芸 徐波 王占国 刘明 龙世兵 Laboratory of Semiconductor Materials Science Institute of Semiconductors Chinese Academy of Sciences PO Box 912 Beijing 100083 Key Laboratory of Nano-Fabrication and Novel Devices Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029
GaAs (001) substrates are patterned by electron beam lithography and wet chemical etching to control the nucleation of lnAs quantum dots (QDs). InAs dots are grown on the stripe-patterned substrates by solid sourc... 详细信息
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Total Ionizing Dose Effects of 55-nm Silicon-Oxide-Nitride-Oxide-Silicon Charge Trapping Memory in Pulse and DC Modes
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Chinese Physics Letters 2018年 第7期35卷 130-133页
作者: 李梅 毕津顺 徐彦楠 李博 习凯 王海滨 刘璟 李金 季兰龙 骆丽 刘明 Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 University of Chinese Academy of Sciences Beijing 100049 School of Internet of Things Engineering HoHai University Changzhou 213022 Beijing Jiaotong University Beijing 100044
The (60)Co-γ ray total ionizing dose radiation responses of 55-nm silicon-oxide-nitride-oxide-silicon(SONOS) memory cells in pulse mode(programmed/erased with pulse voltage) and dc mode(programmed/erased with ... 详细信息
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CMN: a co-designed neural architecture search for efficient computing-in-memory-based mixture-of-experts
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Science China(Information Sciences) 2024年 第10期67卷 100-114页
作者: Shihao HAN Sishuo LIU Shucheng DU Mingzi LI Zijian YE Xiaoxin XU Yi LI Zhongrui WANG Dashan SHANG Department of Electrical and Electronic Engineering The University of Hong Kong ACCESS-AI Chip Center for Emerging Smart Systems InnoHK Centers Key Lab of Fabrication Technologies for Integrated Circuits Chinese Academy of Sciences Laboratory of Microelectronics Devices and Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences University of Chinese Academy of Sciences School of Microelectronics Southern University of Science and Technology
Artificial intelligence(AI) has experienced substantial advancements recently, notably with the advent of large-scale language models(LLMs) employing mixture-of-experts(MoE) techniques, exhibiting human-like cognitive... 详细信息
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X-ray irradiation-induced degradation in Hf_(0.5)Zr_(0.5)O_(2) fully depleted silicon-on-insulator n-type metal oxide semiconductor field-effect transistors
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Rare Metals 2021年 第11期40卷 3299-3307页
作者: Yu-Dong Li Qing-Zhu Zhang Fan-Yu Liu Zhao-Hao Zhang Feng-Yuan Zhang Hong-Bin Zhao Bo Li Jiang Yan Key Laboratory of Microelectronics Devices and Integrated Technology Integrated Circuit Advanced Process Center(ICAC)Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China University of Chinese Academy of Sciences Beijing 100049China State Key Laboratory of Advanced Materials for Smart Sensing GRINM Group Co.LtdBeijing 100088China Institute of Microelectronics Chinese Academy of SciencesBeijing 100029China School of Information Science and Technology North China University of TechnologyBeijing 100144China
The n-type ultrathin fully depleted silicon-on-insulator(FDSOI) metal-oxide-semiconductor field-effect transistors(MOSFETs),with a Hf_(0.5)Zr_(0.5)O_(2) high dielectric permittivity(high-k) dielectric as gate insulato... 详细信息
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