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Enhanced Pyroelectric Response in Quenched BNT-Based Lead-Free Ferroelectrics for Uncooled Infrared Detection

Advanced Functional Materials 2025年

作者： Shen, Meng Zhang, Xian Cen, Fangjie Zhang, Qingfeng Zhang, Haibo Zhang, Guangzu Jiang, Shenglin Chen, Yong Hu, Yongming Yao, Kui Hubei Key Laboratory of Micro-Nanoelectronic Materials and Devices Key Laboratory of Intelligent Sensing System and Security of Ministry of Education and School of Microelectronics Hubei University Wuhan430062 China School of Integrated Circuits Engineering Research Center for Functional Ceramics MOE and Wuhan National Laboratory for Optoelectronics Huazhong University of Science and Technology Wuhan430074 China Ministry of Education Key Laboratory of Green Preparation and Application for Functional Materials Hubei Key Laboratory of Micro-Nanoelectronic Materials and Devices Hubei Key Laboratory of Polymer Materials School of Materials Science & Engineering Hubei University Wuhan430062 China School of Materials Science and Engineering State Key Laboratory of Material Processing and Die & Mould Technology Huazhong University of Science and Technology Wuhan430074 China Singapore138634 Singapore

Excellent pyroelectric performance in environmentally friendly lead-free ferroelectrics is highly demanded for uncooled infrared detector. However, the trade-off between room temperature pyroelectric coefficient (proom) and depolarization temperature (Td) remains a major challenge of lead-free ferroelectrics for their device applications. Herein, a superior proom of 13.8 × 10−4 C m−2 K−1 with high Td of 155 °C is achieved in quenched BNT-Fe/Mn-NBT sample. Oxygen vacancy engineering is proposed to solve the constraint between proom and Td in BNT-based ceramics. The local A/B site displacement and oxygen vacancies are constructed in the BNT-Fe/Mn-NBT perovskite structure by quenching treatment, resulting in larger lattice distortion and superior proom. Meanwhile, defect-induced inhomogeneous random field compensates the ferroelectric depolarization field and down-shifts the free energy well, maintaining high Td. The resulting pyroelectric infrared detector made from the high-performance quenched BNT-Fe/Mn-NBT generates the voltage responsivity of 5906 V W−1 and specific detection rate of 1.8 × 108 cm Hz1/2 W−1, which is comparable to the commercial RD-624 type PZT-based pyroelectric infrared detector. © 2025 Wiley-VCH GmbH.

关键词： Perovskite

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Investigation of Electrical Characteristics on Morphotropic Phase Boundary of Hf1-xZrxO2 for Dynamic Random Access Memories

Investigation of Electrical Characteristics on Morphotropic ...

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China Semiconductor technology International Conference (CSTIC)

作者： Kun Zhong Huaxiang Yin Zhaohao Zhang Fan Zhang Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing China School of Integrated Circuits University of Chinese Academy of Sciences Beijing China Xidian University Key Laboratory of Wide Bandgap Semiconductor Materials

This paper investigates the properties of different Zr compositions in $\mathrm{H}\mathrm{f}_{1-\mathrm{x}}\mathrm{Z}\mathrm{r}_{\mathrm{x}}\mathrm{O}_{2}$ films. Due to the morphotropic phase boundary (MPB) between the orthorhombic ferroelectric phase and the tetragonal anti-ferroelectric phase, a maximum $\kappa$ value of 55 was obtained for 9 nm $\mathrm{H}\mathrm{f}_{0.4}\mathrm{Z}\mathrm{r}_{0.6}\mathrm{O}_{2}$ films. Furthermore, the sufficiently low leakage current of the capacitors was confirmed. Finally, a promising switching endurance of up to $5\times 10^{9}$ cycles was also performed, which becomes one of the driving forces for next-generation dynamic random access memories (DRAM) cell capacitor dielectric materials.

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Switchable hidden spin polarization and negative Poisson's ratio in two-dimensional antiferroelectric wurtzite crystals

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Journal of Semiconductors 2023年第12期44卷 72-80页

作者： Zhuang Ma Jingwen Jiang Gui Wang Peng Zhang Yiling Sun Zhengfang Qian Jiaxin Zheng Wen Xiong Fei Wang Xiuwen Zhang Pu Huang Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province College of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen 518060China School of Advanced Materials Peking UniversityShenzhen Graduate SchoolShenzhen 518055China Chongqing Institute of Green and Intelligent Technology Chinese Academy of SciencesChongqing 400714China School of Physics and Microelectronics Zhengzhou UniversityZhengzhou 450001China Renewable and Sustainable Energy Institute University of ColoradoBoulderColorado 80309USA

Two-dimensional(2D)antiferroelectric materials have raised great research interest over the last ***,we reveal a type of 2D antiferroelectric(AFE)crystal where the AFE polarization direction can be switched by a certain degree in the 2D *** 2D functional materials are realized by stacking the exfoliated wurtzite(wz)monolayers with“self-healable”nature,which host strongly coupled ferroelasticity/antiferroelectricity and benign *** AFE candidates,i.e.,Zn X and Cd X(X=S,Se,Te),are all semiconductors with direct bandgap atΓpoint,which harbors switchable antiferroelectricity and ferroelasticity with low transition barriers,hidden spin polarization,as well as giant in-plane negative Poisson's ratio(NPR),enabling the co-tunability of hidden spin characteristics and auxetic magnitudes via AFE *** 2D AFE wz crystals provide a platform to probe the interplay of 2D antiferroelectricity,ferroelasticity,NPR,and spin effects,shedding new light on the rich physics and device design in wz semiconductors.

关键词： wurtzite crystal multiferroics hidden spin polarization negative Poisson's ratio

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Influence of Back Gate Bias on the Hot Carrier Reliability of DSOI nMOSFET

Influence of Back Gate Bias on the Hot Carrier Reliability o...

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Annual International Symposium on Reliability Physics

作者： Xinyi Zhang Kewei Wang Fang Wang Jiangjiang Li Zhicheng Wu Duoli Li Bo Li Jianhui Bu Zhengsheng Han Institute of Microelectronics of Chinese Academy of Sciences Beijing China University of Chinese Academy of Sciences Beijing China Key Laboratory of Science and Technology on Silicon Devices Chinese Academy of Sciences Beijing China State key Lab of Fabrication Technologies for Integrated Circuits Institute of Microelectronics Chinese Academy of Sciences Beijing China Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing China

The hot carrier reliability under different back-gate bias in DSOI nMOSFET is studied. Reverse back-gate bias results in an over-all larger time exponents than the forward back-gate bias, which is attributed to the increased lateral electric field (as supported by TCAD simulation) and consequently a stronger interface state generation (related to SVE mechanisms). Such strong time acceleration is crucial for long term reliability prediction under circuit operation. The abnormal deviation among threshold voltage shift, linear/saturation drain current degradation is observed: through careful inspection of the degradation of the I- V characteristics, the competing role of the interface state generation and hot hole trapping is revealed, with a virtual channel shortening effect as supported by the increased DIBL values.

关键词： Degradation Simulation Hot carriers MOSFET circuits Logic gates Threshold voltage Interface states

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Influence of Negative DIBL Effect on MOSFET Effective Drive Current and CMOS Circuit

Influence of Negative DIBL Effect on MOSFET Effective Drive ...

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2021 China Semiconductor technology International Conference, CSTIC 2021

作者： Huang, Weixing Zhu, Huilong Zhang, Yongkui Wu, Zhenhua Jia, Kunpeng Yin, Xiaogen Li, Yangyang Ai, Xuezheng Huo, Qiang University of Chinese Academy of Sciences Beijing100049 China Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing100029 China

ISBN: (纸本)9781665449458

In this study, the influence of the negative DIBL (NDIBL) effect of a negative capacitance nanowire filed-effect-transistor (negative capacitance (NC) NWFET) on MOSFET effective drive current (Ieff) and CMOS circuit performance were analyzed by employing a custom-built SPICE model. The Ieff of NC NWFET increased by 12% due to NDIBL effect. A 7-stage ring oscillator was simulated to analyze the CMOS circuit energy-delay, and it shown that significant delay reduction, at iso-energy and iso-area, can be achieved due to NDIBL effect of NC NWFET. A 6T SRAM cell was investigated, and enhanced hold and read static noise margins (SNM) are achieved due to NDIBL effect. Moreover, several methods of increasing NDIBL effect were proposed. © 2021 IEEE.

关键词： SPICE

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Investigation of Synergic Hydrogen Mitigation Technique for Top-Gate A-IGZO Thin-Film Transistors

Investigation of Synergic Hydrogen Mitigation Technique for ...

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China Semiconductor technology International Conference (CSTIC)

作者： Gangping Yan Zhiyu Song Haoqing Xu Shangbo Yang Chuqiao Niu Guoliang Tian Yanna Luo Luoyun Zhang Yunjiao Bao Gaobo Xu Huaxiang Yin Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing China University of Chinese Academy of Sciences Beijing China Beijing Superstring Academy of Memory Technology Beijing China

In this work, a simple hydrogen mitigation method for the top-gate amorphous In-Ga-Zn-O thin-film transistor (a-IGZO TFT) is proposed. The influences of synergic modulations between post-dielectric thermal treatment and Al2O3 buffer layer acting as oxygen-blockers are investigated to address hydrogen issues. Using the proposed optimization approach, the self-aligned channel annealing is successfully performed to realize $\gt104x$ increase in on-current of a-IGZO TFTs. These results provide useful guidance for high-performance a-IGZO devices in monolithic three-dimensional integration.

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Multiferroicity and giant in-plane negative Poisson’s ratio in wurtzite monolayers

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npj Computational Materials 2022年第1期8卷 489-499页

作者： Zhuang Ma Pu Huang Jin Li Peng Zhang Jiaxin Zheng Wen Xiong Fei Wang Xiuwen Zhang Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province College of Physics and Optoelectronic EngineeringShenzhen University518060ShenzhenChina School of Advanced Materials Peking UniversityShenzhen Graduate School518055ShenzhenChina Chongqing Institute of Green and Intelligent Technology Chinese Academy of Sciences400714ChongqingChina School of Physics and Microelectronics Zhengzhou University450001ZhengzhouChina

Monolayers of layered materials,such as graphite and molybdenum dichalcogenides,have been the focus of materials science in the last ***,we reveal benign stability and intriguing physical properties in the thinnest monolayer wurtzite(wz)semiconductors,which can be exfoliated from their bulk and stacked to reform the wz *** candidate ZnX and CdX(X=S,Se,Te)monolayers possess low cleavage energy and direct bandgaps,which harbor strongly coupled ferroelectricity and ferroelasticity with low transition barriers,giant in-plane negative Poisson’s ratio,as well as giant Rashba spin splitting,enabling the co-tunability of spin splitting and auxetic magnitudes via multiferroic *** wz monolayers can be used as building blocks of devices structures,due to their inherent“self-healable”capacity,which offer more flexibility for semiconductor fabrication and provide a natural platform to probe the interplay of multiple physical effects,bringing light into the rich physics in tetrahedral semiconductors.

关键词： plane splitting molybdenum

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Enhanced hole transport of nonpolar InGaN-based light-emitting diodes with lateral p-type superlattice doping structure

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Fundamental Research 2024年

作者： Tao, Hongchang Xu, Shengrui Zhang, Yachao Su, Huake Gao, Yuan Liu, Xu Ding, Ruixue Xie, Lei Wang, Haitao Zhang, Jincheng Hao, Yue State Key Laboratory of Wide-Bandgap Semiconductor Devices and lntegrated Technology School of Microelectronics Xidian University Xi'an 710071 China Key Laboratory of Analog Integrated Circuits and Systems Ministry of Education School of Microelectronics Xidian University Xi'an 710071 China

In this work, we propose a novel structure for nonpolar (10–10)-plane InGaN-based light-emitting diode (LED) using a lateral p-type Al0.2Ga0.8N/GaN superlattice structure as the hole injection layer. The main objecti... 详细信息

In this work, we propose a novel structure for nonpolar (10–10)-plane InGaN-based light-emitting diode (LED) using a lateral p-type Al_0.2Ga_0.₈N/GaN superlattice structure as the hole injection layer. The main objective is to increase the hole concentration and facilitate vertical hole injection. The nonpolar InGaN-based LED lacks polarization along the growth plane (10–10), but the lateral direction along [0001] exhibits strong polarization. Therefore, the Al_0.2Ga_0.₈N/GaN superlattice structure, which is periodic along the [0001] direction, induces net polarization charges at the GaN/Al_0.2Ga_0.₈N interface, resulting in increased ionization rates of the acceptors. Additionally, the high-density two-dimensional hole gases formed at the Al_0.2Ga_0.₈N/GaN interfaces along the [0001] direction can efficiently inject vertically into the quantum wells. Based on the numerical simulation results, the proposed LED structure offers improved electrical characteristics, effective hole injection, and enhanced optical performance compared to the nonpolar LED with conventional p-type doping structure. © 2024

关键词： Lateral superlattice structure Light-emitting Diodes (LEDs) Nitrides Nonpolar

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First Demonstration of High-Sensitivity (NEP<1fW•Hz-1/2) Back-Illuminated Active-Matrix Deep UV Image Sensor by Monolithic integration of Ga2O3 Photodetectors and Oxide Thin-Film-Transistors

First Demonstration of High-Sensitivity (NEP<1fW•Hz-1/2) Ba...

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Symposium on VLSI technology

作者： Yuan Qin Congyan Lu Zhaoan Yu Zhihong Yao Feihong Wu Danian Dong Xiaolong Zhao Guangwei Xu Yuhao Zhang Shibing Long Ling Li Ming Liu Key Laboratory of Microelectronics Devices &#x0026 Integration Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing China Center of Power Electronics Systems Virginia Polytechnic Institute and State University Blacksburg VA USA School of Microelectronics University of Science and Technology of China Hefei China

ISBN: (纸本)9781665497732

We, for the first time, demonstrated a back-illuminated active-matrix deep UV (DUV) image sensor by monolithically integrating an ultra-wide bandgap (UWBG) Ga 2 O 3 photodetector (PD) array and IGZO thin-film-transistors (TFT) based on a low temperature back-end-of-line (BEOL) process. Benefited from the low off-state current of 10 -13 A, high on/off ratio of 5×10 8 , and high stability of IGZO TFTs, the integrated PD/TFT sensor cell presents super-high sensitivity with NEP down to 1fW•Hz -1/2 with a high responsivity and specific detectivity of 302A/W and 1.7×10 15 Jones, respectively. The 32×32 DUV image sensor shows excellent uniformity and demonstrates a superior image recognition ability with light intensity down to 2 μW/cm 2 . This scalable, high-resolution DUV image sensor shows great promise for advanced imaging and machine vision applications.

关键词： Image sensors Sensitivity Machine vision Monolithic integrated circuits Very large scale integration Photodetectors Thin film transistors

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A monolithically sculpted van der Waals nano-opto-electro-mechanical coupler

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Light(Science & Applications) 2022年第3期11卷 76-85页

作者： Tongyao Zhang Hanwen Wang Xiuxin Xia Ning Yan Xuanzhe Sha Jinqiang Huang Kenji Watanabe Takashi Taniguchi Mengjian Zhu Lei Wang Jiantou Gao Xilong Liang Chengbing Qin Liantuan Xiao Dongming Sun Jing Zhang Zheng Han Xiaoxi Li State Key Laboratory of Quantum Optics and Quantum Optics Devices Institute of Opto-ElectronicsShanxi UniversityTaiyuan 030006China Collaborative Innovation Center of Extreme Optics Shanxi UniversityTaiyuan 030006China Shenyang National Laboratory for Materials Science Institute of Metal ResearchChinese Academy of SciencesShenyang 110016China School of Material Science and Engineering University of Science and Technology of ChinaAnhui 230026China Research Center for Functional Materials National Institute for Materials Science1-1 NamikiTsukuba 305-0044Japan International Center for Materials Nanoarchitectonics National Institute for Materials Science1-1 NamikiTsukuba 305-0044Japan College of Advanced Interdisciplinary Studies National University of Defense TechnologyChangsha 410073China The Key Laboratory of Science and Technology on Silicon Devices Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China The University of Chinese Academy of Sciences Beijing 100029China State Key Laboratory of Quantum Optics and Quantum Optics Devices Institute of Laser SpectroscopyShanxi UniversityTaiyuan 030006China

The nano-opto-electro-mechanical systems(NOEMS)are a class of hybrid solid devices that hold promises in both classical and quantum manipulations of the interplay between one or more degrees of freedom in optical,electrical and mechanical *** date,studies of NOEMS using van der Waals(vdW)heterostructures are very limited,although vdW materials are known for emerging phenomena such as spin,valley,and topological ***,we devise a universal method to easily and robustly fabricate vdW heterostructures into an architecture that hosts opto-electro-mechanical couplings in one single *** demonstrated several functionalities,including nano-mechanical resonator,vacuum channel diodes,and ultrafast thermo-radiator,using monolithically sculpted graphene NOEMS as a *** readout of electric and magnetic field tuning of mechanical resonance in a CrOCl/graphene vdW NOEMS is further *** results suggest that the introduction of the vdW heterostructure into the NOEMS family will be of particular potential for the development of novel lab-on-a-chip systems.

关键词： monolithic tuning resonator

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