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4th International Conference on Laser, Optics, and Optoelectronic technology, LOPET 2024

作者： Li, Changjiang Deng, Yifeng Xiao, Zeyu Wu, Zipei Zhu, Lei Lin, Junxiong Peng, Xiao Yan, Wei Qu, Junle State Key Laboratory of Radio Frequency Heterogeneous Integration Shenzhen University Shenzhen518060 China College of Physics and Optoelectronic Engineering Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province Shenzhen University Shenzhen518060 China Engineering Research Center for Eco-Dyeing and Finishing of Textiles Ministry of Education Zhejiang Sci-Tech University Hangzhou310018 China Key Laboratory of Advanced Textile Materials and Manufacturing Technology Ministry of Education Zhejiang Sci-Tech University Hangzhou310018 China College of Textile Science and Engineering International Institute of Silk Zhejiang Sci-Tech University Hangzhou310018 China School of Medical Engineering and Technology Xinjiang Medical University Urumqi810017 China

ISBN: (纸本)9781510681903

Mulberry silk fabrics are very popular due to their soft lustre, comfortable handle and smooth texture. Currently, the traditional textile testing methods are deficient to provide a fast and sensitive directional detection way or quantitative characterization data to study different process stages of the textile. Here, we used crepe de chine as silk samples for microscopy detection. Both confocal fluorescence microscopy and fluorescence lifetime imaging microscopy (FLIM) methods have been applied into observing samples at different process stages to obtain their surface morphology and fluorescence lifetime distribution. The confocal results showed that the samples had autofluorescence under excitation at several wavelengths. The fluorescent intensities of different samples from a series of process stages of the silk manufacture or the air-dried pure sericin were obtained under the 640 nm excitation, which was used in the following FLIM experiments. FLIM results showed that in undyed group, the lifetime values of the raw silk fabric were around 2400 ps. The lifetime of the sample with partial sericin left were similar to those in the raw silk fabric while the intensities were decreased. The optical properties of the dyed fabrics were similar to the undyed group, but their lifetime values were lower than those of the undyed group, suggesting that the silk fabrics had different optical properties due to the factors including the residual amount of sericin and dyeing condition. Briefly, FLIM can provide a non-destructive method for real-time quantitative investigation of the silk fabrics at different process stages, providing information for parameters such as the residual amount of sericin. © 2024 SPIE.

关键词： Fluorescence imaging

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Temperature Dependence of Resistive Switching Behavior in α-Ga2O3 Thin Films

SSRN

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SSRN 2024年

作者： Sun, Kai Peng, Bo Yuan, Lei Yu, Jiangang Zhang, Yuming Jia, Renxu School of Microelectronics Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices Xidian University ShanXi Xi’an710071 China State Key Laboratory of Dynamic Measurement Technology School of Semiconductor and Physics North University of China ShanXi Taiyuan030051 China

This study comprehensively analyzes the resistive switching behavior of αGa2O3 thin films under varying temperatures, a critical aspect for data storage and in-memory computing applications. Our results demonstrate that α-Ga2O3 exhibits resistive switching at temperatures up to 225 ◦C, maintaining their low resistive state and data retention for 30 mins below 175 ◦C. We investigate the conduction mechanisms at elevated temperatures and examine the factors underlying performance degradation, through a combination of experimental observations and first-principles calculations. We find that the current in the high resistive state increases with temperature, attributed to enhanced thermionic emission and Schottky barrier degradation, which leads to a degradation in the resistive state ratio. At 225 ◦C, we observed a shift in the low resistive state, indicating a departure from the conduction mechanism induced by the conductive filament. This shift is associated with the increased displacement of oxygen vacancies in the crystal, as revealed by our time-dependent density functional theory simulations. Our research indicates that below 225 ◦C, the degradation of the RRAM device’s resistive state ratio primarily results from the reduction of the metal-gallium oxide Schottky barrier rather than changes in the oxygen vacancy conductive filaments. This reveals that α-Ga2O3 as a compelling choice for the application in RRAM device where thermal endurance is crucial. © 2024, The Authors. All rights reserved.

关键词： Gallium compounds

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Microcomb-driven photonic chip for solving partial differential equations

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Advanced Photonics 2025年第1期7卷 62-73页

作者： Hongyi Yuan Zhuochen Du Huixin Qi Guoxiang Si Cuicui Lu Yan Yang Ze Wang Bo Ni Yufei Wang Qi-Fan Yang Xiaoyong Hu Qihuang Gong Beijing Institute of Technology School of PhysicsCenter for Interdisciplinary Science of Optical Quantum and NEMS IntegrationBeijing Key Laboratory of Nanophotonics and Ultrafine Optoelectronic SystemsKey Laboratory of Advanced Optoelectronic Quantum Architecture and Measurements of Ministry of EducationBeijingChina Beijing Academy of Quantum Information Sciences Peking UniversityNano-optoelectronics Frontier Center of Ministry of EducationCollaborative Innovation Center of Quantum MatterState Key Laboratory for Mesoscopic Physics&Department of PhysicsBeijingChina Chinese Academy of Sciences Institute of MicroelectronicsBeijingChina Peking University Yangtze Delta Institute of Optoelectronics NantongChina Shanxi University Collaborative Innovation Center of Extreme OpticsTaiyuanChina Hefei National Laboratory HefeiChina

With the development of the big data era,the need for computation power is dramatically growing,especially for solving partial differential equations(PDEs),because PDEs are often used to describe complex systems and phenomena in both science and ***,it is still a great challenge for on-chip photonic solving of time-evolving PDEs because of the difficulties in big coefficient matrix photonic computing,high accuracy,and error *** overcome these challenges by realizing a microcomb-driven photonic chip and introducing time-division multiplexing and matrix partition techniques into PDE photonic solving,which can solve PDEs with a large coefficient matrix on a photonic chip with a limited *** PDEs,including the heat equation with the first order of time derivative,the wave equation with the second order of time derivative,and the nonlinear Burgers equation,are solved with an accuracy of up to 97%.Furthermore,the parallel solving of the Poisson equation and Laplace's equation is demonstrated experimentally on a single chip,with an accuracy of 95.9%and 95.8%,*** offer a powerful photonic platform for solving PDEs,which takes a step forward in the application of photonic chips in mathematical problems and will promote the development of on-chip photonic computing.

关键词： photonic computing silicon photonics partial differential equations

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Experimental Demonstration of A CT-FeFET Array with Intrinsic Long-Short-Term Plasticity for Low-Cost Trajectory Prediction

Experimental Demonstration of A CT-FeFET Array with Intrinsi...

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International Electron devices Meeting (IEDM)

作者： Chao Li Jie Yu Xumeng Zhang Zhaohao Zhang Fangduo Zhu Siyuan Ouyang Pei Chen Lingli Cheng Gaobo Xu Qingzhu Zhang Huaxiang Yin Qi Liu Ming Liu State Key Laboratory of Integrated Chips and Systems Frontier Institute of Chip and System Fudan University Shanghai China Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing China Key Laboratory of Fabrication Technologies for Integrated Circuits Chinese Academy of Sciences Beijing China

ISBN: (数字)9798350365429

ISBN: (纸本)9798350365436

Trajectory prediction is a vital function in the auto-driving field, typically achieved with a long short-term memory network. Static IMC technology accelerates the computing of long-term parameters, while the execution of short-term parameters faces great buffer overhead. Inspired by the fused long-short-term synaptic plasticity in biology, here, we proposed a dynamic IMC strategy based on a charge-trapping FeFET array with intrinsic long-short-term plasticity. The long-term weights are stored in the ferroelectric domain, while the short-term weights are in-situ dynamically operated in a charge-trapping domain, eliminating the external caching process. We further demonstrated a dynamic IMC neuromorphic system built on this array for performing trajectory prediction of moving vehicles, achieving more than 1000x and 4x improvements than GPU in power consumption and memory overhead.

关键词： Performance evaluation Power demand Neuromorphics Memory management Graphics processing units Trajectory Vehicle dynamics Synapses Long short term memory FeFETs

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A DC-DC converter utilizing $\beta-\text{Ga}_{2}\mathrm{O}_{3}$ Schottky barrier diode

A DC-DC converter utilizing $\beta-\text{Ga}_{2}\mathrm{O}_{...

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IEEE Electron devices technology and Manufacturing Conference (EDTM)

作者： Wei Guo Guangzhong Jian Feihong Wu Kai Zhou Guangwei Xu Xuanze Zhou Qiming He Xiaolong Zhao Shibing Long School of Microelectronics University of Science and Technology of China Hefei China Key Laboratory of Microelectronics Devices and Integration Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing China

The β-Ga2O3 Schottky barrier diode (SBD) is fabricated and actualized a breakdown voltage of 472 V. A SPICE model for β-Ga2O3 Sbd is derived from experimental results and applied to DC-DC converter circuit simulatio... 详细信息

ISBN: (纸本)9781728181769;9781728181776

The β-Ga₂O₃ Schottky barrier diode (SBD) is fabricated and actualized a breakdown voltage of 472 V. A SPICE model for β-Ga₂O₃ Sbd is derived from experimental results and applied to DC-DC converter circuit simulation. Then the β-Ga₂O₃ SBD is implemented in a DC-DC converter circuit and acquired the conversion efficiency of 94.8%, indicating the great potential of Ga₂O₃-based devices and circuits.

关键词： Schottky diodes Electric potential Circuit simulation Schottky barriers DC-DC power converters Packaging SPICE

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Polarization Reconfigurable Patch Antenna Loaded a Dielectric Lens for Ka-Band Applications

Polarization Reconfigurable Patch Antenna Loaded a Dielectri...

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International Conference on Microwave and Millimeter Wave technology Proceedings

作者： Xujun Yang Jun Hu Lei Ge School of Information and Artificial Intelligence Engineering Anhui Agricultural University Anhui China School of Microelectronics Hefei University of Technology Anhui China State Key Laboratory of Radio Frequency Heterogeneous Integration Shenzhen University Shenzhen China

ISBN: (数字)9798350389968

ISBN: (纸本)9798350389975

This paper presents a millimeter-wave (mm-Wave) polarization reconfigurable patch antenna for Ka-band wireless applications. The central patch connected with two groups of parasitic shorting posts by the PIN diodes is used to achieve the polarization diversity, which can switch the polarization state at ±45° directions. Then, to improve the radiation performance, an extended semiellipsoidal lens is added in the proposed antenna that provides about 10 dB improvement in antenna gain. The gain enhanced polarization reconfigurable antenna is with the advantages of high gain, low cost and stable radiation pattern, making it an attractive choice for low-cost 5G mm- Wave applications.

关键词： Microwave antennas Wireless communication Polarization Costs Patch antennas Millimeter wave technology Bandwidth

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Cost-Efficient Soft Error Detection and Correction Flip-Flop Design for Nanoscale technology

Cost-Efficient Soft Error Detection and Correction Flip-Flop...

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International Conference on ASIC

作者： Hong-Chen Li He Liu Jie Li Heilongjiang Provincial Key Laboratory of Micro-Nano Sensitive Devices and Systems Heilongjiang University Harbin China Microelectronics Center Harbin Institute of Technology Harbin China

With the rapid development of integrated circuits and the scaling down of transistor feature sizes, the susceptibility of flip-flops to the Single Event Transient (SET) and Single Event Upset (SEU) increases. In this paper, an Error Detection and Correction D Flip-Flop (EDC DFF) is proposed by radiation-hardened by design approach, which can tolerate soft errors induced by SETs and SEUs. By adding redundant detection circuits composed of a shadow latch and a detection XOR gate, and replacing the inverter at the output with the error correction circuit controlled by the error indicator signal, EDC DFF can detect and correct soft errors induced by SETs and SEUs. Compared with the existing radiation-hardened DFF designs, the EDC DFF has higher robustness, lower overhead, and the lowest APDP (Area-Power-Delay Product).

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An Efficient Construction Method Based on Partial Distance of Polar Codes with Reed-Solomon Kernel

arXiv

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arXiv 2023年

作者： Zhao, Jianhan Zhang, Wei Liu, Yanyan The School of Microelectronics Tianjin University Tianjin300072 China The Tianjin Key Laboratory of Photoelectronic Thin Film Devices and Technology Nankai University Tianjin300071 China

Polar codes with Reed-Solomon (RS) kernel have great potential in next-generation communication systems due to their high polarization rate. In this paper, we study the polarization characteristics of RS polar codes and propose two types of partial orders (POs) for the synthesized channels, which are supported by validity proofs. By combining these partial orders, a Partial Distance-based Polarization Weight (PDPW) construction method is presented. The proposed method achieves comparable performance to Monte-Carlo simulations while requiring lower complexity. Additionally, a Minimum Polarization Weight Puncturing (MPWP) scheme for rate-matching is proposed to enhance its practical applicability in communication systems. Simulation results demonstrate that the RS polar codes based on the proposed PDPW construction outperform the 3rd Generation Partnership Project (3GPP) NR polar codes in terms of standard code performance and rate-matching performance. Copyright © 2023, The Authors. All rights reserved.

关键词： Polarization

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A photomemory by selective-assembling hybrid porphyrin-silicon nanowire field-effect transistor

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Science China(Information Sciences) 2020年第6期63卷 253-255页

作者： Gong CHEN Bocheng YU Xiaokang LI Xiaoqiao DONG Xiaoyan XU Zhihong LI Ru HUANG Ming LI Key Laboratory of Microelectronic Devices and Circuits(MOE) Institute of MicroelectronicsPeking University National Key Laboratory of Science and Technology on Micro/Nano Fabrication Peking University Faculty of Information Technology Beijing University of Technology

Dear editor,Recently, the integration of photosensitive material and electronic nanodevice has been the center of attention with Internet of things (IoT)technology development [1–3]. The immobilization of such photoactive molecules on the semiconductor surface was necessarily adopted to employ their photoelectric characteristics which can be observed in the solution. Porphyrin-based hybrid transistors have emerged as promising candidates for photonic sensing application due to the

关键词： A photomemory by selective-assembling hybrid porphyrin-silicon nanowire field-effect transistor

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Influence of an ALD TiN capping layer on the PBTI characteristics of n-FinFET with ALD HfO2/TiN-capping/TiAl gate stacks

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Science China(Information Sciences) 2020年第2期63卷 248-250页

作者： Hong YANG Luwei QI Yanbo ZHANG Bo TANG Qianqian LIU Hao XU Xueli MA Xiaolei WANG Yongliang LI Huaxiang YIN Junfeng LI Huilong ZHU Chao ZHAO Wenwu WANG Tianchun YE Key Laboratory of Microelectronics Devices & Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences National Space Science Center Chinese Academy of Sciences School of Microelectronics University of Chinese Academy of Sciences

Dear editor,High k/metal gate (HKMG) stacks with fully gatelast processing have become the primary solution for sub-22-nm volume manufacturing with the development of complementary oxide semiconductor(CMOS) technology [1]. In the HKMG stack, titanium nitride (TiN) is observed to play an important role as a work-function metal and an HK

关键词： red Influence of an ALD TiN capping layer on the PBTI characteristics of n-FinFET with ALD HfO2/TiN-capping/TiAl gate stacks ALD FinFET

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