检索结果-内蒙古大学图书馆

13th Asia-Pacific International Symposium on Electromagnetic Compatibility and Technical Exhibition, APEMC 2022

作者： Wang, Z. Wu, J. Li, B. Zhang, H. Zhao, X. Li, J. Zhao, W. Ye, T. Guangdong Greater Bay Area Institute of Integrated Circuit and System Guangzhou China Institute of Microelectronics of Chinese Academy of Sciences Beijing China Key Laboratory of Silicon Devices and Technology Chinese Academy of Sciences Beijing China National University of Defense Technology Changsha China Tianjin Institute of Advanced Technology Tianjin China

ISBN: (数字)9781665416719

ISBN: (纸本)9781665416719

This paper studies the behavior characteristics of the same structure circuits manufactured by three different technology nodes in the synergistic environment of total ionizing dose (TID) irradiation and electromagnetic interference (EMI). The experimental results show that the irradiation degrade the EMI immunity of the circuit with larger process feature size. Concurrently, the irradiation induces the abnormal startup problem of the circuit in the complex noise frequency domain environment, and the larger the technology feature size of the circuit can make the starting problem of the circuit worse. © 2022 IEEE.

关键词： Signal interference

来源：评论

学校读者我要写书评

暂无评论

Piezovalley effect and magnetovalley coupling in altermagnetic semiconductors

arXiv

引用

arXiv 2024年

作者： Xie, Weifeng Xu, Xiong Yue, Yunliang Xia, Huayan Wang, Hui School of Microelectronics and Physics Hunan University of Technology and Business Changsha410205 China School of Physics Hunan Key Laboratory of Super Microstructure and Ultrafast Process Hunan Key Laboratory of Nanophotonics and Devices State Key Laboratory of Powder Metallurgy Central South University Changsha410083 China College of Information Engineering Yangzhou University Yangzhou225127 China

Clarifying the physical origin of valley polarization and exploring promising ferrovalley materials are conducive to the application of valley degrees of freedom in the field of information storage. Here, we explore two novel altermagnetic semiconductors (monolayers Nb2Se2O and Nb2SeTeO) with Néel temperature above room temperature based on first-principles calculations. It reveals that uniaxial strain induces valley polarization without spin-orbital coupling (SOC) in altermagnets owing to the piezovalley effect, while uniaxial compressive strain transforms the intrinsic ferrovalley semiconductor into a semimetal, half metal and metal. Moreover, moderate biaxial strain renders Janus monolayer Nb2SeTeO to robust Dirac-like band dispersion. The SOC and intrinsic in-plane magnetocrystalline anisotropy energy induce Dirac-like altermagnets to generate apparent valley polarization through magnetovalley coupling. In terms of SOC perturbation, we elucidate the physical mechanism behind in-plane-magnetization induced valley polarization and demonstrate the magnitude of valley polarization is positively correlated with the square of SOC strength and negatively correlated with the bandgap. The present work reveals the physical origin of valley polarization in altermagnets and expands the application of ferrovalley at room temperature in valleytronics. Copyright © 2024, The Authors. All rights reserved.

关键词： Magnetocrystalline anisotropy

来源：评论

学校读者我要写书评

暂无评论

Tuning 2D magnetism in Fe3+XGeTe2 films by element doping

引用

National Science Review 2022年第6期9卷 163-170页

作者： Shanshan Liu Zihan Li Ke Yang Enze Zhang Awadhesh Narayan Xiaoqian Zhang Jiayi Zhu Wenqing Liu Zhiming Liao Masaki Kudo Takaaki Toriyama Yunkun Yang Qiang Li Linfeng Ai Ce Huang Jiabao Sun Xiaojiao Guo Wenzhong Bao Qingsong Deng Yanhui Chen Lifeng Yin Jian Shen Xiaodong Han Syo Matsumura Jin Zou Yongbing Xu Xiaodong Xu Hua Wu Faxian Xiu State Key Laboratory of Surface Physics and Department of Physics Fudan University Institute for Nanoelectronic Devices and Quantum Computing Fudan University College of Science University of Shanghai for Science and Technology Laboratory for Computational Physical Sciences(MOE) Fudan University Solid State and Structural Chemistry Unit Indian Institute of Science School of Electronic Science and Engineering Nanjing University Department of Physics University of Washington Department of Electronic Engineering Royal Holloway University of London Materials Engineering The University of Queensland Beijing Key Laboratory of Microstructure and Property of Advanced Materials Institute of Microstructure and Property of Advanced Materials Beijing University of Technology The Ultramicroscopy Research Center Kyushu University State Key Laboratory of ASIC and System School of Microelectronics Fudan University Collaborative Innovation Center of Advanced Microstructures Department of Applied Quantum Physics and Nuclear Engineering Kyushu University Centre for Microscopy and Microanalysis The University of Queensland Shanghai Research Center for Quantum Sciences

Two-dimensional（2D） ferromagnetic materials have been discovered with tunable magnetism and orbital-driven nodal-line features. Controlling the 2D magnetism in exfoliated nanoflakes via electric/magnetic fields enables a boosted Curie temperature（TC） or phase transitions. One of the challenges, however, is the realization of high TC2D magnets that are tunable, robust and suitable for large scale fabrication. Here, we report molecular-beam epitaxy growth of wafer-scale Fe3+XGeTe2films with TCabove room temperature. By controlling the Fe composition in Fe3+XGeTe2, a continuously modulated TCin a broad range of 185–320 K has been achieved. This widely tunable TCis attributed to the doped interlayer Fe that provides a 40% enhancement around the optimal composition X = 2. We further fabricated magnetic tunneling junction device arrays that exhibit clear tunneling signals. Our results show an effective and reliable approach, i.e. element doping, to producing robust and tunable ferromagnetism beyond room temperature in a large-scale 2D Fe3+XGeTe2fashion.

关键词： 2D ferromagnetic material Fe3+XGeTe2 film element doping above room temperature TC tunability

来源：评论

学校读者我要写书评

暂无评论

A Two-Phase Hybrid Switched Capacitors Converter with Interleaving Control Scheme for Flying Capacitors Self-Balancing

A Two-Phase Hybrid Switched Capacitors Converter with Interl...

引用

Annual IEEE Conference on Applied Power Electronics Conference and Exposition (APEC)

作者： Weidong Xue Yiseng Zhang Yang Lu Jian Fang Junyan Ren School of Microelectronics Fudan University Shanghai China State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu China Omnivision Technology Phoenix USA

This paper presents a dual-path power stage with an interleaving control scheme in a two-phase hybrid switched capacitor converter. In a conventional three-level converter, the flying capacitor voltage is not self-balanced and thus extra calibration is required to overcome parameter and timing mismatches, parasitic capacitors, etc. The proposed converter obtains a self-balanced flying capacitor voltage with an interleaving control scheme. And then, the non-ideal effects are also calibrated without an additional cost. In addition, there are two series power switches in the discharge path in the three-level converter. But in the proposed power stage, there is only one power switch. Therefore, the conduction loss is reduced dramatically in each de-energizing phase. The converter is implemented with a conversion from 12.0 V to 1.0 V at a 1-MHz switching frequency, based on a $0.15-\mu\mathrm{m}$ highvoltage BCD process. The simulation shows that the flying capacitor voltages are self-balanced within only one switching cycle. The peak efficiency of 89.8% is achieved by this converter under a 3-A current load.

关键词：

来源：评论

学校读者我要写书评

暂无评论

Numerical Analysis of a Low Switching Loss and Snapback-Free Ligbt with Trench Gate and Blocking Junction

SSRN

引用

SSRN 2023年

作者： Wu, Zhenhui Zeng, Rongzhou Li, Junhong Feng, Yahui Liao, Linyuan School of Transportation Engineering Hunan University of Technology Zhuzhou412007 China State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu610054 China State Key Laboratory of Wide Bandgap Semiconductor Materials and Devices School of Microelectronics Xidian University Xi’an710071 China

To reduce switching loss, a lateral insulated gate bipolar transistor structure with a trench gate and blocking junction (TBJ-LIGBT) is proposed and investigated. The TBJ-LIGBT features an embedded P-drift between the N-drift and carrier storage layer. In the on-state, the snapback phenomenon is eliminated because the TBJ-LIGBT operates in the conventional LIGBT mode at a low collector voltage. During the turn-on transient, the turn-on loss (Eon) is reduced because the P-drift can be filled with holes rapidly. When the TBJ-LIGBT turns off, the turn-off loss (Eoff) is reduced due to the quick establishment of the electric field (E-field) in the P-drift. The simulation results show that, compared with the traditional LIGBT, the Eon and Eoff of the TBJ-LIGBT are reduced by 63 % and 19 % at ICE = 100 A/cm2 respectively. Furthermore, under short-circuit condition, the heat distribution of drift region is improved, so the short circuit capability is improved 25 % at VCE = 200 V. © 2023, The Authors. All rights reserved.

关键词： Electric fields

来源：评论

学校读者我要写书评

暂无评论

Enhanced interband tunneling in two-dimensional tunneling transistors through anisotropic energy dispersion

引用

Physical Review B 2022年第7期105卷 075413-075413页

作者： Hengze Qu Shiying Guo Wenhan Zhou Zhenhua Wu Jiang Cao Zhi Li Haibo Zeng Shengli Zhang Key Laboratory of Advanced Display Materials and Devices Ministry of Industry and Information Technology College of Material Science and Engineering Nanjing University of Science and Technology Nanjing 210094 China Key Laboratory of Microelectronics Device and Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing 100029 China School of Electronic and Optical Engineering Nanjing University of Science and Technology Nanjing 210094 China

The unsatisfactory transmission probability in tunneling junction is a major challenge that restricts the performance and scaling of next-generation nanodevices, such as the tunnel field-effect transistors (TFETs). Here, we propose a strategy utilizing anisotropic electronic structures to enhance the inter-band tunneling performance. In the tunneling process, the sharp energy dispersion in transport direction ensures a high transmission eigenvalue, and the weak transverse energy state can broaden the transverse tunneling window, thus strengthening the tunneling probability. Furthermore, our quantum transport simulations demonstrate that in two-dimensional (2D) group VA-VA TFETs, the stronger anisotropic band structures make 2D BiAs and arsenene exhibit high on-state current several times higher than other systems, and the relative larger bandgap of arsenene also gives rise to a steep subthreshold slope below 60 mV/dec. This work provides a physical understanding of the tunneling transport performance, and the anisotropic 2D electronic structures can be regarded as a target feature to design tunneling transistors.

关键词： Electronic structure Quantum transport 2-dimensional systems Phosphorene First-principles calculations

来源：评论

学校读者我要写书评

暂无评论

SOT-MRAM-based true in-memory computing architecture for approximate multiplication

引用

Chip 2025年第2期4卷

作者： Song, Min Tang, Qilong Ouyang, Xintong Duan, Wei Xu, Yan Zhang, Shuai You, Long Key Laboratory of Intelligent Sensing System and Security of the Ministry of Education Hubei Key Laboratory of Micro-Nanoelectronic Materials and Devices School of Microelectronics Hubei University Wuhan430062 China School of Integrated Circuits Huazhong University of Science and Technology Wuhan430074 China

The in-memory computing (IMC) paradigm emerges as an effective solution to break the bottlenecks of conventional von Neumann architecture. In the current work, an approximate multiplier in spin-orbit torque magnetoresistive random access memory (SOT-MRAM) based true IMC (STIMC) architecture was presented, where computations were performed natively within the cell array instead of in peripheral circuits. Firstly, basic Boolean logic operations were realized by utilizing the feature of unipolar SOT device. Two majority gate-based imprecise compressors and an ultra-efficient approximate multiplier were then built to reduce the energy and latency. An optimized data mapping strategy facilitating bit-serial operations with an extensive degree of parallelism was also adopted. Finally, the performance enhancements by performing our approximate multiplier in image smoothing were demonstrated. Detailed simulation results show that the proposed 8 × 8 approximate multiplier could reduce the energy and latency at least by 74.2% and 44.4% compared with the existing designs. Moreover, the scheme could achieve improved peak signal-to-noise ratio (PSNR) and structural similarity index metric (SSIM), ensuring high-quality image processing outcomes. © 2025 The Author(s)

关键词： MRAM devices

来源：评论

学校读者我要写书评

暂无评论

Memory materials and devices:From concept to application

引用

InfoMat 2020年第2期2卷 261-290页

作者： Zhenhan Zhang Zongwei Wang Tuo Shi Chong Bi Feng Rao Yimao Cai Qi Liu Huaqiang Wu Peng Zhou State Key Laboratory of ASIC and System School of MicroelectronicsFudan UniversityShanghaiChina Key Laboratory of Microelectronic Devices and Circuits(MOE) Institute of MicroelectronicsPeking UniversityBeijingChina Key Laboratory of Microelectronic Devices and Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijingChina College of Materials Science and Engineering Shenzhen UniversityShenzhenChina Institute of Microelectronics Tsinghua UniversityBeijingChina

Memory cells have always been an important element of information *** emerging technologies like big data and cloud computing,the scale and complexity of data storage has reached an unprecedented peak with a much higher requirement for memory *** is well known,better data storage is mostly achieved by ***,as the size of the memory device is reduced,a series of problems,such as drain gate-induced leakage,greatly hinder the performance of memory *** meet the increasing demands of information technology,novel and high-performance memory is urgently ***,emerging memory technologies are expected to improve memory performance and drive the information *** review will focus on the progress of several emerging memory technologies,including two-dimensional material-based memories,resistance random access memory(RRAM),magnetic random access memory(MRAM),and phasechange random access memory(PCRAM).Advantages,mechanisms,and applications of these diverse memory technologies will be discussed in this review.

关键词： memory MRAM PCRAM RRAM two-dimensional material

来源：评论

学校读者我要写书评

暂无评论

Effect of Epitaxial Layer Parameters on the Avalanche Energy of Power VDMOS 5

Effect of Epitaxial Layer Parameters on the Avalanche Energy...

引用

5th IEEE International Conference on Electronics technology, ICET 2022

作者： Li, Changze Ren, Min Tao, Lin Zhang, Xin Yu, Shiheng Lai, Xinzhang Zhuo, Ningze Zhang, Bo University of Electronic Science and Technology of China State Key Laboratory of Electronic Thin Films and Integrated Devices Sichuan Chengdu China Wuxi China Resources Huajing Microelectronics Co.LTD Jiangsu Wuxi China Jiangsu Changjing Electronics Technology Co.LTD Jiangsu Nanjing China

ISBN: (纸本)9781665485081

The Unclamped Inductive Switching (UIS) process is often considered to be the most extreme electro-thermal stress condition a vertical double diffused MOSFET (VDMOS) can encounter. Avalanche energy (EAS) is commonly used to characterize the ability of devices to withstand UIS tests and to assess device reliability. It is found that epitaxial layer has an effect on EAS of VDMOS. Simulations and experimental results have shown that lower resistivity and larger drift region thickness can result in a high EAS for nonpunch-through VDMOS with the same breakdown voltage. A transient additional carrier model is proposed to explain the effect of epitaxial layer. Therefore, in addition to taking effective measures to prevent the parasitic NPN transistor from turning on, it is also very important to select the parameters of epitaxial layer properly to improve the UIS capability of VDMOS. © 2022 IEEE.

关键词： Reliability

来源：评论

学校读者我要写书评

暂无评论

Excitation-dependent perovskite/polymer films for ultraviolet visualization

引用

Science Bulletin 2022年第17期67卷 1755-1762页

作者： Junlu Sun Tianshu Li Lin Dong Qilin Hua Shuai Chang Haizheng Zhong Lijun Zhang Chongxin Shan Caofeng Pan CAS Center for Excellence in Nanoscience Beijing Key Laboratory of Micro-nano Energy and SensorBeijing Institute of Nanoenergy and NanosystemsChinese Academy of SciencesBeijing 100083China Henan Key Laboratory of Diamond Optoelectronic Materials and Devices Key Laboratory of Materials Physics(Ministry of Education) School of Physics and MicroelectronicsZhengzhou UniversityZhengzhou 450001China State Key Laboratory of Integrated Optoelectronics Key Laboratory of Automobile Materials(Ministry of Education)College of Materials Science and EngineeringJilin UniversityChangchun 130012China MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices School of Materials Science&EngineeringBeijing Institute of TechnologyBeijing 100081China

Ultraviolet(UV)visualization has extensive applications in military and civil fields such as security monitoring,space communication,and wearable equipment for health monitoring in the internet of things(IoT).Due to their remarkable optoelectronic features,perovskite materials are regarded as promising candidates for UV light detecting and ***,we report for the first time the excitationdependent perovskite/polymer films with dynamically tunable fluorescence ranging from green to magenta by changing the UV excitation from 260 to 380 *** they still render dynamic multicolor UV light imaging with different polymer matrixes,halogen ratios,and cations of perovskite *** mechanism of its fluorescence change is related to the chloride vacancies in perovskite materials.A patterned multi-color ultraviolet visualization pad is also demonstrated for visible conversion of the UV *** technique may provide a universal strategy for information securities,UV visualizations,and dynamic multi-color displays in the IoT.

关键词： Excitation-dependent Perovskite/polymer hybrids Chloride vacancy Ultraviolet visualization

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：