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Progress in flexible organic thin-film transistors and integrated circuits

Science Bulletin 2016年第14期61卷 1081-1096页

作者： Congyan Lu Zhuoyu Ji Guangwei Xu Wei Wang Lingfei Wang Zhiheng Han Ling Li Ming Liu Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Key Laboratory of Nanofabrication and Novel Devices Integration Technology Institute of Microelectronics Chinese Academy of Sciences

Organic thin-film transistor constructs the headstone of flexible electronic world such as conformable sensor arrays and flexible active-matrix displays. With solutionprocessed methods, it forges ahead toward large-area, lowcost manufacturing goals. As an indispensable complement to traditional silicon-based transistors, organic thin-film field-effect transistors have made great progress in materials,performance, bending capacity, and integrated circuits in recent few years. Flexible transistors and circuitry have extremely promising application prospects and possess irreplaceable status in foldable displays, artificial skins and bendable smart cards. In this review, we will discuss the evolution of flexible organic transistors and integrated circuits in terms of material, fabrication as well as application.

关键词： OTFT Flexibility Integrated circuits

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Crystal Growth Promotion Enables High-Performance Te0.7Se0.3 Thin-Film Shortwave Infrared Photodetector for Multispectral Imaging Applications

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Advanced Functional Materials 2025年

作者： Li, Hongbo Li, Chuanhao Peng, Meng Li, Kanghua Chen, Chao Chen, Yuexing Zheng, Zhuanghao Su, Zhenghua Liang, Guangxing Chen, Shuo Institute of Thin Film Physics and Applications Shenzhen Key Laboratory of Advanced Thin Films and Applications Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province State Key Laboratory of Radio Frequency Heterogeneous Integration College of Physics and Optoelectronic Engineering Shenzhen University Shenzhen518060 China Huazhong University of Science and Technology Wuhan430074 China

Tellurium-selenium (TexSe1-x) alloy compound is considered as an excellent light absorber layer for thin-film photodetector applications, owing to its suitable bandgap and excellent optoelectronic performance. Recently, the research on TexSe1-x photodetectors has achieved considerable progress, especially under electron and/or hole transport layer engineering to improve the device responsivity. However, the intrinsic growth mechanism of TexSe1-x thin film still needs investigation. In this work, based on the analysis of crystal growth thermodynamics and kinetics, Te0.7Se0.3 light absorber with optimal (100) growth orientation can be achieved through thermal evaporation of pre-alloyed Te0.7Se0.3 powder and atmosphere-assisted slow thermal annealing of Te0.7Se0.3 thin film. Thanks to the optimized Te0.7Se0.3 light absorber and Te0.7Se0.3/ZnO heterojunction interface, the champion self-powered thin-film photodetector possesses a wide spectral response range of 300–1600 nm, minimized dark current density of 3.1 × 10−5 mA cm−2, accompanied with satisfactory responsivity of 0.06 A W−1 and detectivity of 5.9 × 109 Jones at 1300 nm, and linear dynamic range exceeding 101 dB. Interestingly, an imaging system based on this photodetector can achieve high-precision color imaging and multispectral imaging from visible light to short wave infrared light, highlighting the intriguing application potential of Te0.7Se0.3 photodetectors. © 2025 Wiley-VCH GmbH.

关键词： Heterojunctions

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A Novel Dual-Mode Dual Trench MOSFET With Self-Adjustable Field Plate for Low EMI Noise and High Dynamic Avalanche Robustness

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IEEE Transactions on Device and Materials Reliability 2025年

作者： Wang, Tongyang Li, Zehong Zhao, Yishang Xia, Ziming Zheng, Yige Ye, Jun Xiao, Xuan University of Electronic Science and Technology of China State Key Laboratory of Electronic Thin Films and Integrated Devices Chengdu610054 China UESTC Chongqing Institute of Microelect ronics Industry Technology China China Resources Microelectronics Limited Chongqing China

A novel dual-mode dual trench MOSFET (DDT-MOSFET) featuring shorted P-doping field plate (PFP) and N-doping field plate (NFP) is proposed. A parasitic depletion region capacitor and a parasitic MOSFET are introduced in the self-adjustable field plate (SFP). During turn-on, the DDT-MOSFET is in the split gate trench (SGT) mode with an electron inversion layer in the PFP, achieving low Cgd. During turn-off, the DDT-MOSFET is in the insulator pillar superjunction (I-SJ) mode with depleted PFP, achieving low electromagnetic interference (EMI) noise and high breakdown voltage (BV). Mode conversion is realized by the introduction of the SFP. By TCAD simulation, during turn-off, the proposed structure exhibits 33.9% improvement in BV, 42.8% reduction in maximum dID/dt and 44.1% reduction in overshoot voltage (VO) with same Eoff, reducing EMI noise and improving dynamic avalanche robustness without deterioration of other electrical characteristics. © 2001-2011 IEEE.

关键词： MOSFET devices

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Piezovalley effect and magnetovalley coupling in altermagnetic semiconductors studied by first-principles calculations

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Physical Review B 2025年第13期111卷 134429-134429页

作者： Weifeng Xie Xiong Xu Yunliang Yue Huayan Xia Hui Wang School of Microelectronics and Physics Hunan University of Technology and Business Changsha 410205 China School of Physics Hunan Key Laboratory of Super Microstructure and Ultrafast Process Hunan Key Laboratory of Nanophotonics and Devices State Key Laboratory of Powder Metallurgy Central South University Changsha 410083 China College of Information Engineering Yangzhou University Yangzhou 225127 China

Clarifying the physical origin of valley polarization and exploring promising ferrovalley materials are conducive to the application of valley degrees of freedom in the field of information storage. Here, we explore two altermagnetic semiconductors (monolayers Nb2Se2O and Nb2SeTeO) with Néel temperature above room temperature based on first-principles calculations. We find that uniaxial strain induces valley polarization without spin-orbital coupling (SOC) in altermagnets owing to the piezovalley effect, while uniaxial compressive strain transforms the intrinsic ferrovalley semiconductor into a semimetal, half metal, and metal. Moreover, moderate biaxial compressive strain renders Janus monolayer Nb2SeTeO to robust Dirac-conelike band dispersion. The SOC and intrinsic in-plane magnetocrystalline anisotropy energy induce Dirac-conelike altermagnets to generate apparent valley polarization through magnetovalley coupling. In terms of SOC perturbation, we elucidate the physical mechanism behind in-plane magnetization-induced valley polarization and demonstrate that valley polarization is negatively correlated with the band gap. The present work reveals the physical origin of valley polarization in altermagnets and expands the application of ferrovalley at room temperature in valleytronics.

关键词： Degrees of freedom (mechanics)

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InSnZnO Thin-Film Transistors Coupled with Hydrophobic Polymer-Inorganic Hybrid Layer for Enhanced Pressure Sensing

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IEEE Sensors Journal 2025年第11期25卷 18918-18925页

作者： Yang, Mei Lin, Delang Liu, Xiangcheng Huang, Wei Li, Guijun Chen, Rongsheng South China University of Technology School of Microelectronics Guangzhou510640 China Shenzhen University Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province College of Physics and Optoelectronic Engineering Shenzhen518060 China

In this work, we fabricated a multi-component precursor solution mainly composed of polyvinylidene fluoride, zinc oxide, and MXene. The resulting solution was then applied to the thin-film transistors (TFTs) with InSnZnO (ITZO) channels via a simple spin-coating process, forming a hydrophobic polymer-inorganic hybrid layer (PIHL) tailored for pressure sensing applications. The PIHL serves as a piezoelectric-charge-gating layer, modulating the TFT channel current in response to the applied pressure. The PIHL-coupled ITZO TFT device exhibits good electrical properties, including a saturation mobility of 18.16 cm2/V·s, a subthreshold swing of 110 mV/dec, and an on/off current ratio of 2.43 × 10. As the external pressure increases, the threshold voltage of the device shifts towards a higher positive gate voltage. Additionally, the device demonstrates a rapid response to external pressure, with a response time of 125 ms and a sensitivity up to 3.53 kPa-1. Consequently, this miniaturized TFT pressure sensor holds potential for applications in flexible touch screens, human-computer interaction, and electronic skin technologies. © 2025 IEEE.

关键词： Thin film transistors

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An Effective Method to Compensate for Testing Induced SBFET Degradation by Charging Deep-Level Interface Trap

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IEEE Access 2025年 13卷 93481-93490页

作者： Tiexin Zhang Fanyu Liu Lei Shu Siyuan Chen Yuchong Wang Yuchen Wu Jing Wan Yong Xu Shi Li Yuyang Ding Bo Li Zhengsheng Han Tianchun Ye Key Laboratory of Science and Technology on Silicon Devices Institute of Microelectronics of the Chinese Academy of Sciences Beijing China University of Chinese Academy of Sciences Beijing China School of Microelectronics Fudan University Shanghai China School of Microelectronics Nanjing University of Posts and Telecommunications Nanjing China China Institute of Atomic Energy Beijing China National Institute of Metrology Beijing China

In this paper, the threshold voltage ( $V_{\mathrm {th}}$ ) of Schottky barrier field effect transistors (SBFETs) based on ultra-thin silicon on insulator (SOI) wafer shift induced by electrical test is analyzed. Repeated testing gives rise to a positive shift of the $V_{\mathrm {th}}$ , which is similar to the constant voltage stress effect found in two-dimensional materials. The series resistance of Source and Drain ( $R_{\mathrm {sd}}$ ), mobility ( $\mu $ ), and trapped charge are studied. The positive $\Delta V_{\mathrm {th}}$ is independent of the $R_{\mathrm {sd}}$ and $\mu $ , but related to the deep-level acceptor interface trap, which is charged during the test. The main reason for trap charging is that the Source and Drain contact prepared by metal deposition cannot provide electrons for trap capturing before testing. In order to compensate for the $\Delta V_{\mathrm {th}}$ induced by the test, a deep-level trap charging method is proposed. The necessity of this new test method is verified by irradiation experiments.

关键词： Stress Testing Metals Electron traps Silicon-on-insulator Schottky barriers Threshold voltage Silicon Resistance Printed circuits

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Entanglement Improvement of Three-mode Squeezed Vacuum State Via Number-conserving Operation

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International Journal of Theoretical Physics 2025年第6期64卷 1-20页

作者： Dai, Shiyu Kang, Qingqian Hu, Liyun Liu, Cunjin Zhao, Teng Center for Quantum Science and Technology Jiangxi Normal University Nanchang China Jiangxi Civil-Military Integration Research Institute Nanchang China Department of Physics College of Science and Technology Jiangxi Normal University Nanchang China Jiangxi Provincial Key Laboratory of Advanced Electronic Materials and Devices Nanchang China

In this paper, the quantum entanglement properties of a three-mode squeezed vacuum state under an ideal and realistic scenario are discussed. We find that photon loss has a significant negative effect on quantum entanglement, leading to the degradation of entangled states and the loss of fidelity. In order to overcome this challenge, we further study the effect of number-conserving operation on the entangled properties of three-mode squeezed vacuum states. In general, when the squeezing amplitude is small, the multi-mode and high-order number-conserving operation has the optimal effect on the improvement of entanglement. With the increase of squeezing amplitude, we need to reduce the number of operated modes and the order of number-conserving operation to obtain the optimal improvement effect. When the squeezing amplitude is large enough, the number-conserving operation no longer has the improvement effect. The results in this paper are helpful to further understand the multi-mode squeezed vacuum state and provide an estimable theoretical basis for its application in quantum information processing.

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The impact of 10 MeV electron irradiation on switching characteristics of SiC MOSFET devices

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microelectronics Reliability 2025年 171卷

作者： Fu, Xianghe Guo, Shuwen Peng, Wenbo Zhao, Xiaolong Zhu, Quanzhe He, Yongning Shaanxi Key Laboratory for Electronic Devices and Advanced Chips The Key Lab of Micro-Nano Electronics and System Integration of Xi'an City School of Microelectronics Faculty of Electronic and Information Engineering Xi'an Jiaotong University Shaanxi Xi'an710049 China Shannxi Advangced Semiconductor Technology Center Co. Ltd. Shaanxi Xi'an710077 China

The rigorous requirements of applications such as deep space exploration, nuclear power plants, and nuclear submarines, pose stringent demands on the radiation resistance of power devices. SiC exhibits excellent radiation resistance compared to Si, while the application of SiC power devices in electron radiation environments still requires further theoretical and experimental refinement. In particular, there is a lack of research on the impact of electron radiation on the switching characteristics of SiC power devices. In this work, we studied the electron radiation effects on the dynamic and static characteristics of SiC VDMOSFET via theoretical modeling, simulation analysis, and 10 MeV irradiation experiments. We further analyzed their radiation damage mechanisms, especially for the damage on the gate structure and drift region. Radiation-induced damage to the gate oxide is the main cause of changes in device characteristics. The experimental results demonstrate a nonlinear correlation between the radiation dose and the threshold voltage of SiC MOSFET devices. With the increase in radiation dose, the switching-on delay time and switching-off voltage/current change rate of the devices decrease, while the switching-off delay time and switching-on voltage/current change rate increase. Consequently, there is a reduction in switching-on losses and an increase in switching-off losses, which affect the thermal generation during the switching process of the device. We also conducted a comparative analysis with Si MOSFET devices. The dynamic and static characteristics of SiC MOSFET devices are found to be less affected by radiation compared to Si MOSFET devices, exhibiting superior radiation resistance. © 2025

关键词： Silicon carbide

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Simulation study of biosensor based on germanium-based dual-source dopingless line-tunneling FET

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Nanotechnology 2025年第22期36卷 2025 May 1页

作者： Huang, Junjie Liu, Hongxia Chen, Shupeng Wang, Shulong Chong, Chen Yan, Zhanpeng Zhou, Xilong Liu, Chang Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education School of Microelectronics Xidian University Xi’an710071 China Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou511370 China

In this paper, we propose and investigate a biosensor based on germanium-based dual-source dopingless line-tunneling FET, which uses dielectric modulation to detect biomolecules. Dual source and line-tunneling structure improves open state current of the biosensor. The trench gate structure facilitates biomolecules filling and cavity etching while enhancing the tunneling area. The dopingless structure prevents the formation of mutant junctions and minimizes the effects of random dopant fluctuations. Simulation results show that the proposed biosensor demonstrates excellent performance, with a high switching ratio of 5.9 × 1011, a maximum threshold voltage sensitivity of 3.1 V, a maximum open state current sensitivity of 2.8 × 106, a maximum average subthreshold swing (SS) sensitivity of 0.86, and the minimum average SS is 36.8 mv/decade. The proposed biosensor, exhibiting high sensitivity and low power consumption, holds significant application potential. © 2025 IOP Publishing Ltd. All rights, including for text and data mining, AI training, and similar technologies, are reserved.

关键词： Biochips

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Impact of contact properties on the performance of β-Ga2O3 solar-blind photodetector

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The European Physical Journal Special Topics 2025年 1-7页

作者： Dong, Yu-Song Liang, Ming-Xuan Qian, Ling-Xuan National Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu China School of Integrated Circuit Science and Engineering University of Electronic Science and Technology of China Chengdu China Chongqing Institute of Microelectronics Industry Technology University of Electronic Science and Technology of China Chongqing China

Herein, the impact of contact properties on the performance of β-Ga2O3 solar-blind photodetectors (PDs) was comprehensively investigated by comparing pure Au and Ti/Au Metal–Semiconductor–Metal (MSM) contacts as well as varying the contact-annealing conditions. SIMS and XPS spectra reveal that there is a mutual diffusion between Ti and Ga atoms forming an interfacial layer, and that the out-diffusion of O atoms from β-Ga2O3 thin film results in the appearance of TiOx species and high oxygen deficiency at the metal/semiconductor (M/S) interface. Accordingly, the sensitivity of Ti/Au-contacted PDs, in terms of responsivity and specific detectivity, was enhanced by more than two orders of magnitude compared with Au-contacted one, which could be attributed to the combined effect of the formation of TiOx, increased electron density, lower Schottky barrier height, shrunk depletion-layer width, and larger internal gain. These effects can be further enhanced by the contact annealing in N2 atmosphere with the rise of temperature. However, the transient-response properties, especially for the recovery speed, degrade rapidly when introducing the increased contact annealing temperature, which could be attributed to continuously increasing interfacial traps as well as broadening interfacial-layer width, even leading to a persistent photocurrent at high anneal temperature. Therefore, the trade-off between sensitivity and speed in β-Ga2O3 solar-blind PDs should be carefully considered when introducing Ti transition layer and contract-annealing process.

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