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Nd:YLF Crystal Growth: Raw Materials Preparation by Melting Method and Property

Wuji Cailiao Xuebao/Journal of Inorganic Materials 2025年第5期40卷 529-535页

作者： Zhao, Kaixuan Liu, Wenpeng Ding, Shoujun Dou, Renqin Luo, Jianqiao Gao, Jinyun Sun, Guihua Ren, Hao Zhang, Qingli Institutes of Physical Science and Information Technology Anhui University Hefei230601 China Anhui Provincial Key Laboratory of Photonic Devices and Materials Anhui Institute of Optics and Fine Mechanics Hefei Institutes of Physical Science Chinese Academy of Sciences Hefei230031 China School of Microelectronics and Data Science Anhui University of Technology Maanshan243032 China National Laboratory of Solid State Microstructure Department of Materials Science and Engineering Nanjing University Nanjing210093 China

Nd3+-doped LiYF4 (Nd:YLF) crystal is a laser crystal with excellent performance, which is widely used in scientific research, industrial and medical fields. But its existing crystal growth method using binary fluoride mixtures is problematic due to fluoride oxides being formed in fluoride raw materials, and process of preparing raw materials by using HF gas fluorination is relatively complicated. Therefore, preparation of high-purity fluoride raw materials is one of the important factors to realize the growth of high-quality fluoride crystals. Meanwhile, crystal growth atmosphere usually contains CF4 or HF, which is highly corrosive to growth system and increases cost of crystal growth. In this work, to obtain high-quality Nd:YLF crystal, the polycrystalline growth raw material with high-purity YLF crystalline phase was first prepared using a nearly closed melting material device, which was a novel design facilitating the melting process and floating salvage process at the temperature above the crystal melting point. Intact Nd:YLF crystal was obtained after growth under a high-purity Ar atmosphere. X-ray diffraction (XRD) patterns of polycrystalline raw materials and growing crystals were tested, while lattice parameters, atomic coordinates, atomic occupancy and temperature factor were obtained by Rietveld refinement. By measuring X-ray rocking curve (XRC) of (100) crystallographic plane of the as-obtained Nd:YLF crystal, the full width at half maximum (FWHM) of diffraction peak is 0.007°. The segregation coefficient of Nd3+ in YLF calculated by measuring the content of each element is 0.3. The strongest absorption peaks of Nd:YLF crystal locate at 797.4 nm (a direction) and 792.3 nm (c direction) with absorption cross sections of 3.37×10–20 and 5.49×10–20 cm2, respectively. The strongest emission peak of Nd:YLF crystal locates at 1047 nm with stimulated emission cross section of 1.598×10–19 cm2 and fluorescence lifetime of 483 μs. Based on above data, Nd:YLF polycr

关键词： Crystal atomic structure

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Super-Heisenberg Scaling in a Triple-Point Criticality

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Physical Review Letters 2025年第19期134卷 190802-190802页

作者： Jia-Ming Cheng Yong-Chang Zhang Xiang-Fa Zhou Zheng-Wei Zhou Xi’an Microelectronics Technology Institute Xi’an 710065 People’s Republic of China MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter Shaanxi Key Laboratory of Quantum Information and Quantum Optoelectronic Devices School of Physics Xi’an Jiaotong University Xi’an 710049 People’s Republic of China CAS Key Lab of Quantum Information University of Science and Technology of China Hefei 230026 People’s Republic of China Synergetic Innovation Center of Quantum Information and Quantum Physics University of Science and Technology of China Hefei 230026 People’s Republic of China Hefei National Laboratory University of Science and Technology of China Hefei 230088 People’s Republic of China

We investigate quantum-enhanced metrology in a triple point criticality and discover that quantum criticality does not always enhance measurement precision. We have developed suitable adiabatic evolution protocols to effectively restrain excitations, which could accelerate the adiabatic evolutions and lead to an exponential super-Heisenberg scaling. This scaling behavior is quite valuable in practical parameter estimating experiments with limited coherence time. Dissipation can strengthen the super-Heisenberg scaling until decoherence increases to dominate in the dissipative dynamics. Additionally, measurement precisions beyond Heisenberg scaling can be experimentally achieved in the trapped ion system. Our findings strongly indicate that criticality-enhanced metrology can indeed significantly enhance measurement precisions to a super-Heisenberg scaling when combining a triple point and beneficial parameter modulations, which will be conducive to the exploration of other super-Heisenberg scaling and their applications.

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On substrate dopant engineering for ET-SOI MOSFETs with UT-BOX

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Journal of Semiconductors 2014年第11期35卷 64-69页

作者：吴昊许淼万光星朱慧珑赵利川童小东赵超陈大鹏叶甜春 Key Laboratory of Microelectronics Devices and Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences

The importance ofsubstrate doping engineering for extremely thin SOI MOSFETs with ultra-thin buried oxide （ES-UB-MOSFETs） is demonstrated by simulation. A new substrate/backgate doping engineering, lateral non-uniform dopant distributions （LNDD） is investigated in ES-UB-MOSFETs. The effects of LNDD on device performance, Vt-roll-off, channel mobility and random dopant fluctuation （RDF） are studied and optimized. Fixing the long channel threshold voltage （Vt） at 0.3 V, ES-UB-MOSFETs with lateral uniform doping in the substrate and forward back bias can scale only to 35 nm, meanwhile LNDD enables ES-UB-MOSFETs to scale to a 20 nm gate length, which is 43% smaller. The LNDD degradation is 10% of the carrier mobility both for nMOS and pMOS, but it is canceled out by a good short channel effect controlled by the LNDD. Fixing Vt at 0.3 V, in long channel devices, due to more channel doping concentration for the LNDD technique, the RDF in LNDD controlled ES-UB-MOSFETs is worse than in back-bias controlled ES-UB-MOSFETs, but in the short channel, the RDF for LNDD controlled ES-UB-MOSFET is better due to its self-adaption of substrate doping engineering by using a fixed thickness inner-spacer. A novel process flow to form LNDD is proposed and simulated.

关键词： extremely thin SOl （ETSOI） fully depleted SOI （FDSOI） short channel effect ultra thin BOX （UT- BOX）

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A 4 GHz 32 bit direct digital frequency synthesizer based on a novel architecture

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Journal of Semiconductors 2013年第11期34卷 136-141页

作者：武锦陈建武吴旦昱周磊江帆金智刘新宇 Institute of Microelectronics Chinese Academy of Sciences Key Laboratory of Microelectronics Devices & Integrated Technology

This paper presents a novel direct digital frequency synthesizer （DDFS） architecture based on nonlinear DAC coarse quantization and the ROM-based piecewise approximation method, which has the advantages of high speed, low power and low hardware resources. By subdividing the sinusoid into a collection of phase segments, the same initial value of each segment is realized by a nonlinear DAC. The ROM is decomposed with a coarse ROM and fine ROM using the piecewise approximation method. Then, the coarse ROM stores the offsets between the initial value of the common segment and the initial value of each line in the same segment. Meanwhile, the fine ROM stores the differences between the line values and the initial value of each line. A ROM compression ratio of 32 can be achieved in the case of 11 bit phase and 9 bit amplitude. Based on the above method, a prototype chip was fabricated using 1.4 #m GaAs HBT technology. The measurement shows an average spurious-free dynamic range （SFDR） of 45 dBc, with the worst SFDR only 40.07 dBc at a 4.0 GHz clock. The chip area is 4.6 × 3.7 mm2 and it consumes 7 W from a --4.9 V power supply.

关键词： direct digital frequency synthesis read-only memory digital-to-analog converter gallium arsenide heterojunction bipolar transistor

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A low offset chopper amplifier with three-stage nested Miller configuration

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Science China(Information Sciences) 2014年第6期57卷 192-198页

作者： HUANG ZhuoLei WANG WeiBing JIANG Fan CHEN DaPeng Key Laboratory of Microelectronics Devices and Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences

A low offset,low noise chopper amplifier for sensor system application is *** 1/f noise is achieved by employing chopper technique,and low offset is achieved by employing residual offset suppression *** open-loop gain is extended using three-stage nested Miller *** chip was implemented in 0.5μm 2P3M CMOS *** amplifier is featured by an open-loop gain of 135 dB and a GBW of3 *** measured offset voltage is 3μV,and the equivalent input noise power spectrum density at 1 Hz is96 nV/√Hz.

关键词： chopper amplifier nested Miller configuration low offset residual offset suppression noise power spectrum density

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Simulation and fabrication of thin film bulk acoustic wave resonator

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Journal of Semiconductors 2016年第7期37卷 86-91页

作者：韩茜茜欧毅李志刚欧文陈大鹏叶甜春 Institute of Microelectronics of Chinese Academy of Sciences Key Laboratory of Microelectronics Devices and Integrated Technology

In this paper, we present the simulation and fabrication of a thin film bulk acoustic resonator （FBAR）. In order to improve the accuracy of simulation, an improved Mason model was introduced to design the resonator by taking the coupling effect between electrode and substrate into consideration. The resonators were fabricated by tile eight inch CMOS process, and the measurements show that the improved Mason model is more accurate than a simple Mason model. The Qs （Q at series resonance）, Qp （Q at parallel resonance）, Qmax and k2 of the FBAR were measured to be 695, 814, 1049, and 7.01% respectively, showing better performace than previous reports.

关键词： FBAR resonator improved Mason model surface micromachining processes

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New de-embedding structures for extracting the electrical parameters of a through-silicon-via pair

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Journal of Semiconductors 2013年第4期34卷 80-86页

作者：周静万里兮李君王惠娟戴风伟 Daniel Guidotti 曹立强于大全 Key Laboratory of Microelectronics Devices & Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences

Two innovative de-embedding methods are proposed for extracting an electrical model for a through- silicon-via （TSV） pair consisting of a ground-signal （GS） structure. In addition, based on microwave network theory, a new solution scheme is developed for dealing with multiple solutions of the transfer matrix during the process of de-embedding. A unique solution is determined based on the amplitude and the phase characteristic of S parameters. In the first de-embedding method, a typical ＂π＂ type model of the TSV pair is developed, which illustrates the need to allow for frequency dependence in the equivalent TSV pair Spice model. This de-embedding method is shown to be effective for extracting the electrical properties of the TSVs. The feasibility of a second de-embedding method is also investigated.

关键词： through-silicon vias de-embedding structure microwave network multiple solutions transmissionmatrix equivalent circuit

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Optimized power simulation of AlGaN/GaN HEMT for continuous wave and pulse applications

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Journal of Semiconductors 2015年第7期36卷 83-89页

作者：林体元庞磊王鑫华黄森刘果果袁婷婷刘新宇 Key Laboratory of Microelectronics Devices & Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences

An optimized modeling method of 8 ×100μm A1GaN/GaN-based high electron mobility transistor （HEMT） for accurate continuous wave （CW） and pulsed power simulations is proposed. Since the self-heating effect can occur during the continuous operation, the power gain from the continuous operation significantly decreases when compared to a pulsed power operation. This paper extracts power performances of different device models from different quiescent biases of pulsed current-voltage （l-V） measurements and compared them in order to determine the most suitable device model for CW and pulse RF microwave power amplifier design. The simulated output power and gain results of the models at Vgs = -3.5 V, Vds = 30 V with a frequency of 9.6 GHz are presented.

关键词： A1GaN/GaN HEMT pulsed I-V trapping effect self-heating effect

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Simulations of backgate sandwich nanowire MOSFETs with improved device performance

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Journal of Semiconductors 2014年第10期35卷 45-50页

作者：赵恒亮朱慧珑钟健马小龙魏星赵超陈大鹏叶甜春 Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences

We propose a novel backgate sandwich nanowire MOSFET （SNFET）, which offers the advantages of ETSOI （dynamic backgate voltage controllability） and nanowire FETs （good short channel effect）. A backgate is used for threshold voltage （Vt） control of the SNFET. Compared with a backgate FinFET with a punch-through stop layer （PTSL）, the SNFET possesses improved device performance. 3D device simulations indicate that the SNFET has a three times larger overdrive current, a -75% smaller off leakage current, and reduced subthreshold swing （SS） and DIBL than those of a backgate FinFET when the nanowire （NW） and the fin are of equal width. A new process flow to fabricate the backgate SNFET is also proposed in this work. Our analytical model suggests that Vt control by the backgate can be attributed to the capacitances formed by the frontgate, NW, and backgate. The SNFET devices are compatible with the latest state-of-the-art high-k/metal gate CMOS technology with the unique capability of independent backgate control for nFETs and pFETs, which is promising for sub-22 nm scaling down.

关键词： sandwich nanowire MOSFET backgate TCAD analytical model

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Voltage-Modulated Magneto-Dynamics in Spin Hall Nano-Oscillators

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IEEE Magnetics Letters 2025年 16卷

作者： Yao, Linrong Xie, Hongchao Hu, Bin Jiang, Sheng South China University of Technology School of Microelectronics Guangzhou511442 China South China University of Technology Spin-X Institute Guangzhou511442 China South China University of Technology State Key Laboratory of Luminescent Materials and Devices Guangzhou510640 China South China University of Technology School of Physics and Optoelectronics Guangzhou510640 China South China University of Technology Guangdong Basic Research Center of Excellence for Energy and Information Polymer Materials Guangzhou510640 China

Spin Hall nano-oscillators (SHNOs) have garnered attention due to their broad application prospects in microwave generators, information storage, and artificial intelligence computing. This has necessitated the development of efficient methods to control the magneto-dynamics of SHNOs. Magnetic field control requires a field generator, and current control suffers from a narrow frequency range and low efficiency. We present an approach to efficiently control the SHNO magneto-dynamics, i.e., a piezoelectric-based SHNO system, to achieve voltage-modulated magneto-dynamics through magneto-electric coupling. Through micromagnetic simulations, this work demonstrates the indirect control of the magneto-dynamics by voltage-modulated magnetic anisotropy, revealing the impact of changes in magnetic anisotropy on the magneto-dynamics and the underlying physical mechanisms. This discovery enhances the degree of freedom for electrical modulation of SHNOs and contributes to developing advanced spintronic devices. © 2010-2012 IEEE.

关键词： Anisotropy

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