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Anisotropic electrical properties of aligned PtSe_(2) nanoribbon arrays grown by a pre-patterned selective selenization process

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nano Research 2022年第5期15卷 4668-4676页

作者： Huaipeng Wang Zhifang Liu Yilin Sun Xiaofan Ping Jianlong Xu Yingtao Ding Haowen Hu Dan Xie Tianling Ren School of Integrated Circuits Beijing National Research Center for Information Science and Technology(BNRist)Tsinghua UniversityBeijing 100084China Department of Chemistry Tsinghua UniversityBeijing 100084China School of Integrated Circuits and Electronics Beijing Institute of TechnologyBeijing 100081China Institute of Functional Nano&Soft Materials(FUNSOM) Jiangsu Key Laboratory for Carbon-Based Functional Materials&DevicesSoochow UniversitySuzhou 215123China State Key Lab of New Ceramics and Fine Processing School of Materials Science and EngineeringTsinghua UniversityBeijing 100084China

This study proposes a feasible and scalable production strategy to naturally obtain aligned platinum diselenide(PtSe_(2))nanoribbon arrays with anisotropic *** anisotropic properties of two-dimensional(2D)materials,especially transition-metal dichalcogenides(TMDs),have attracted great interest in *** dependence of physical properties on their lattice orientations is of particular interest because of its potential in diverse applications,such as nanoelectronics and ***-dimensional(1D)nanostructures facilitate many feasible production strategies for shaping 2D materials into unidirectional 1D nanostructures,providing methods to investigate the anisotropic properties of 2D materials based on their lattice orientations and *** natural alignment of zigzag(ZZ)PtSe_(2) nanoribbons is experimentally demonstrated using angle-resolved polarized Raman spectroscopy(ARPRS),and the selective growth mechanism is further theoretically revealed by comparing edges and edge energies of different orientations using the density functional theory(DFT).Back-gate field-effect transistors(FETs)are also constructed of unidirectional PtSe_(2) nanoribbons to investigate their anisotropic electrical properties,which align with the results of the projected density of states(DOS)*** work provides new insight into the anisotropic properties of 2D materials and a feasible investigation strategy from experimental and theoretical perspectives.

关键词： PtSe_(2) scalable production anisotropic properties nanoribbons density functional theory

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technology Roadmap for Flexible Sensors

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ACS nano 2023年第6期17卷 5211-5295页

作者： Luo, Yifei Abidian, Mohammad Reza Ahn, Jong-Hyun Akinwande, Deji Andrews, Anne M. Antonietti, Markus Bao, Zhenan Berggren, Magnus Berkey, Christopher A. Bettinger, Christopher John Chen, Jun Chen, Peng Cheng, Wenlong Cheng, Xu Choi, Seon-Jin Chortos, Alex Dagdeviren, Canan Dauskardt, Reinhold H. Di, Chong-an Dickey, Michael D. Duan, Xiangfeng Facchetti, Antonio Fan, Zhiyong Fang, Yin Feng, Jianyou Feng, Xue Gao, Huajian Gao, Wei Gong, Xiwen Guo, Chuan Fei Guo, Xiaojun Hartel, Martin C. He, Zihan Ho, John S. Hu, Youfan Huang, Qiyao Huang, Yu Huo, Fengwei Hussain, Muhammad M. Javey, Ali Jeong, Unyong Jiang, Chen Jiang, Xingyu Kang, Jiheong Karnaushenko, Daniil Khademhosseini, Ali Kim, Dae-Hyeong Kim, Il-Doo Kireev, Dmitry Kong, Lingxuan Lee, Chengkuo Lee, Nae-Eung Lee, Pooi See Lee, Tae-Woo Li, Fengyu Li, Jinxing Liang, Cuiyuan Lim, Chwee Teck Lin, Yuanjing Lipomi, Darren J. Liu, Jia Liu, Kai Liu, Nan Liu, Ren Liu, Yuxin Liu, Yuxuan Liu, Zhiyuan Liu, Zhuangjian Loh, Xian Jun Lu, Nanshu Lv, Zhisheng Magdassi, Shlomo Malliaras, George G. Matsuhisa, Naoji Nathan, Arokia Niu, Simiao Pan, Jieming Pang, Changhyun Pei, Qibing Peng, Huisheng Qi, Dianpeng Ren, Huaying Rogers, John A. Rowe, Aaron Schmidt, Oliver G. Sekitani, Tsuyoshi Seo, Dae-Gyo Shen, Guozhen Sheng, Xing Shi, Qiongfeng Someya, Takao Song, Yanlin Stavrinidou, Eleni Su, Meng Sun, Xuemei Takei, Kuniharu Tao, Xiao-Ming Tee, Benjamin C. K. Thean, Aaron Voon-Yew Trung, Tran Quang Wan, Changjin Wang, Huiliang Wang, Joseph Wang, Ming Wang, Sihong Wang, Ting Wang, Zhong Lin Weiss, Paul S. Wen, Hanqi Xu, Sheng Xu, Tailin Yan, Hongping Yan, Xuzhou Yang, Hui Yang, Le Yang, Shuaijian Yin, Lan Yu, Cunjiang Yu, Guihua Yu, Jing Yu, Shu-Hong Yu, Xinge Zamburg, Evgeny Zhang, Haixia Zhang, Xiangyu Zhang, Xiaosheng Zhang, Xueji Zhang, Yihui Zhang, Yu Zhao, Siyuan Zhao, Xuanhe Zheng, Yuanjin Zheng, Yu-Qing Zheng, Zijian Zhou, Tao Zhu, Bowen Zhu, Ming Zhu, Rong Zhu, Yangzhi Zhu, Yong Zou, Guijin Chen, Xiaodong 08-03 Innovis Singapore 138634 Republic of Singapore Innovative Centre for Flexible Devices (iFLEX) School of Materials Science and Engineering Nanyang Technological University Singapore 639798 Singapore Department of Biomedical Engineering University of Houston Houston Texas 77024 United States School of Electrical and Electronic Engineering Yonsei University Seoul 03722 Republic of Korea Department of Electrical and Computer Engineering The University of Texas at Austin Austin Texas 78712 United States Microelectronics Research Center The University of Texas at Austin Austin Texas 78758 United States Department of Chemistry and Biochemistry California NanoSystems Institute and Department of Psychiatry and Biobehavioral Sciences Semel Institute for Neuroscience and Human Behavior and Hatos Center for Neuropharmacology University of California Los Angeles Los Angeles California 90095 United States Colloid Chemistry Department Max Planck Institute of Colloids and Interfaces 14476 Potsdam Germany Department of Chemical Engineering Stanford University Stanford California 94305 United States Laboratory of Organic Electronics Department of Science and Technology Campus Norrköping Linköping University 83 Linköping Sweden Wallenberg Initiative Materials Science for Sustainability (WISE) and Wallenberg Wood Science Center (WWSC) SE-100 44 Stockholm Sweden Department of Materials Science and Engineering Stanford University Stanford California 94301 United States Department of Biomedical Engineering and Department of Materials Science and Engineering Carnegie Mellon University Pittsburgh Pennsylvania 15213 United States Department of Bioengineering University of California Los Angeles Los Angeles California 90095 United States School of Chemistry Chemical Engineering and Biotechnology Nanyang Technological University Singapore 637457 Singapore Nanobionics Group Department of Chemical and Biological Engineering Monash University Clayton Australia 3800 Monash

Humans rely increasingly on sensors to address grand challenges and to improve quality of life in the era of digitalization and big data. For ubiquitous sensing, flexible sensors are developed to overcome the limitations of conventional rigid counterparts. Despite rapid advancement in bench-side research over the last decade, the market adoption of flexible sensors remains limited. To ease and to expedite their deployment, here, we identify bottlenecks hindering the maturation of flexible sensors and propose promising solutions. We first analyze continued...challenges in achieving satisfactory sensing performance for real-world applications and then summarize issues in compatible sensor-biology interfaces, followed by brief discussions on powering and connecting sensor networks. Issues en route to commercialization and for sustainable growth of the sector are also analyzed, highlighting environmental concerns and emphasizing nontechnical issues such as business, regulatory, and ethical considerations. Additionally, we look at future intelligent flexible sensors. In proposing a comprehensive roadmap, we hope to steer research efforts towards common goals and to guide coordinated development strategies from disparate communities. Through such collaborative

关键词： soft materials mechanics engineering flexible electronics conformable sensors bioelectronics human-machine interfaces body area sensor networks technology translation sustainable electronics

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二维材料最新研究进展

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物理化学学报 2021年第12期37卷 1-151页

作者：常诚陈伟陈也陈永华陈雨丁峰樊春海范红金范战西龚成宫勇吉何其远洪勋胡晟胡伟达黄维黄元季威李德慧李连忠李强林立凌崇益刘鸣华刘楠刘庄 Kian Ping Loh 马建民缪峰彭海琳邵明飞宋礼苏邵孙硕谭超良唐智勇王定胜王欢王金兰王欣王欣然 Andrew T.S.Wee 魏钟鸣吴宇恩吴忠帅熊杰熊启华徐伟高尹鹏曾海波曾志远翟天佑张晗张辉张其春张铁锐张翔赵立东赵美廷赵伟杰赵运宣周凯歌周兴周喻朱宏伟张华刘忠范 Institute of Science and Technology Austria Am Campus 13400 KlosterneuburgAustria Department of Chemistry National University of Singapore3 Science Drive 3117543Singapore Department of Chemistry The Chinese University of Hong KongShatinNew TerritoriesHong KongChina Key Laboratory of Flexible Electronics and Institute of Advanced Materials Nanjing Tech UniversityNanjing 211816China School of Life Sciences Shanghai UniversityShanghai 200444China Centre for Multidimensional Carbon Materials Institute for Basic ScienceUlsan 44919Korea School of Chemistry and Chemical Engineering Shanghai Jiao Tong UniversityShanghai 200240China School of Physical and Mathematical Sciences Nanyang Technological UniversitySingapore 637371Singapore Department of Chemistry City University of Hong KongKowloonHong KongChina Department of Electrical and Computer Engineering and Quantum Technology Center University of MarylandCollege ParkMaryland 20742USA School of Materials Science and Engineering Beihang UniversityBeijing 100191China Department of Materials Science and Engineering City University of Hong KongKowloonHong KongChina Center of Advanced Nanocatalysis(CAN) Hefei National Laboratory for Physical Sciences at the MicroscaleDepartment of Applied ChemistryUniversity of Science and Technology of ChinaHefei 230026China College of Chemistry and Chemical Engineering State Key Laboratory of Physical Chemistry of Solid SurfacesCollaborative Innovation Center of Chemistry for Energy Materials(iChEM)Xiamen UniversityXiamen361005Fujian ProvinceChina State Key Laboratory of Infrared Physics Shanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai 200083China Advanced Research Institute of Multidisciplinary Science Beijing Institute of TechnologyBeijing100081China Beijing Key Laboratory of Optoelectronic Functional Materials&Micro-Nano Devices Department of PhysicsRenmin University of ChinaBeijing 100872China School of Optical and Electronic Information Wuhan National Laboratory

Research on two-dimensional(2D) materials has been explosively increasing in last seventeen years in varying subjects including condensed matter physics, electronic engineering, materials science, and chemistry since the mechanical exfoliation of graphene in 2004. Starting from graphene, 2D materials now have become a big family with numerous members and diverse categories. The unique structural features and physicochemical properties of 2D materials make them one class of the most appealing candidates for a wide range of potential applications. In particular, we have seen some major breakthroughs made in the field of 2D materials in last five years not only in developing novel synthetic methods and exploring new structures/properties but also in identifying innovative applications and pushing forward commercialisation. In this review, we provide a critical summary on the recent progress made in the field of 2D materials with a particular focus on last five years. After a brief backgroundintroduction, we first discuss the major synthetic methods for 2D materials, including the mechanical exfoliation, liquid exfoliation, vapor phase deposition, and wet-chemical synthesis as well as phase engineering of 2D materials belonging to the field of phase engineering of nanomaterials(PEN). We then introduce the superconducting/optical/magnetic properties and chirality of 2D materials along with newly emerging magic angle 2D superlattices. Following that, the promising applications of 2D materials in electronics, optoelectronics, catalysis, energy storage, solar cells, biomedicine, sensors, environments, etc. are described sequentially. Thereafter, we present the theoretic calculations and simulations of 2D materials. Finally, after concluding the current progress, we provide some personal discussions on the existing challenges and future outlooks in this rapidly developing field.

关键词： Two-dimensional materials Transition metal dichalcogenides Phase engineering of nanomaterials Electronics Optoelectronics Catalysis Energy storage and conversion

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Effects of MgO Thickness and Roughness on Perpendicular Magnetic Anisotropy in MgO/CoFeB/Ta Multilayers

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Chinese Physics Letters 2016年第10期33卷 128-131页

作者：刘毅于涛朱正勇钟汇才朱开贵 School of Physics and Nuclear Energy Engineering Beihang University Key Laboratory of Microelectronic Devices & Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences Integrated Circuit Advanced Process Center Institute of MicroelectronicsChinese Academy of Sciences Key Laboratory of Micro-nano Measurement-Manipulation and Physics(Ministry of Education) Beihang University

The dependence of perpendicular magnetic anisotropy （PMA） on the barrier layer MgO thickness in MgO/CoFeB /Ta multilayers is investigated. The results show that the strongest PMA occurs in a small window of about 2 4nm with the increase of MgO thickness from 1-1Onto. The crystalline degree of MgO and the change of interatomic distance along the out-of-plane direction may be the main reasons for the change of PMA in these multilayers. Moreover, the roughnesses of 2- and 4-nm-thick MgO samples are 3.163 and 1.8 nm, respectively, and both the samples show PMA. These results could be used to tune the magnetic characteristic of the ultra thin CoFeB film for future applications in perpendicular magnetic devices.

关键词： PMA MgO of Effects of MgO Thickness and Roughness on Perpendicular Magnetic Anisotropy in MgO/CoFeB/Ta Multilayers in nm Ta on

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Effect of Mo capping layers thickness on the perpendicular magnetic anisotropy in MgO/CoFeB based top magnetic tunnel junction structure

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Chinese Physics B 2016年第11期25卷 558-562页

作者：刘毅朱开贵钟汇才朱正勇于涛马苏德 School of Physics and Nuclear Energy Engineering Beihang University Key Laboratory of Micro-nano Measurement-Manipulation and Physics Ministry of Education Beihang University Integrated Circuit Advanced Process Center Institute of Microelectronics Chinese Academy of Sciences Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences

A detailed study of the magnetic characterizations of the top structure MgO/CoFeB/Mo is *** samples show strong perpendicular magnetic anisotropy（PMA） when the thickness of CoFeB is 0.9 nm and 1.1 *** saturation magnetic moment and interface anisotropy constant are 1566 emu/cm3 and 3.75 erg/cm2,*** magnetic dead layer（MDL） is about 0.23 nm in this ***,strong capping layer thickness dependence is also *** strong PMA of 1.1 nm CoFeB only exists in a Mo cap layer thickness window of 1.2-2 *** maintain PMA,the metal layer could not be too thin or thick in these *** oxidation and diffusion of the metal capping layer should be respectively responsibility for the degradation of PMA in these thin or thick metal capping layer samples.

关键词： anisotropy perpendicular junction annealing annealed thick saturation multilayer responsibility boron

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CO2Photoreduction: Heterostructure Engineering of a Reverse Water Gas Shift Photocatalyst (Adv. Sci. 22/2019)

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Advanced Science 2019年第22期6卷 1970134-1970134页

作者： Hong Wang Jia Jia Lu Wang Keith Butler Rui Song Gilberto Casillas Le He Nazir P. Kherani Doug D. Perovic Liqiang Jing Aron Walsh Roland Dittmeyer Geoffrey A. Ozin Key Laboratory of Functional Polymer Materials of the Ministry of Education Institute of Polymer Chemistry College of Chemistry Nankai University Tianjin 300071 P. R. China Materials Chemistry and Nanochemistry Research Group Solar Fuels Cluster Departments of Chemistry University of Toronto 80 St. George Street Toronto ON M5S3H6 Canada Department of Materials Science and Engineering University of Toronto 184 College Street Toronto ON M5S3E4 Canada Institute of Functional Nano & Soft Materials (FUNSOM) Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices Soochow University 199 Ren'ai Road Suzhou Jiangsu P. R. China SciML Scientific Computing Department Rutherford Appleton Laboratory Didcot OX110QX UK UOW Electron Microscopy Centre University of Wollongong Wollongong New South Wales 2500 Australia Key Laboratory of Functional Inorganic Material Chemistry Ministry of Education School of Chemistry and Materials Science International Joint Research Center for Catalytic Technology Heilongjiang University Harbin 150080 P. R. China Department of Materials Imperial College London Exhibition Road London SW7 2AZ UK Department of Materials Science and Engineering Yonsei University Seoul 03722 Korea Institute for Micro Process Engineering Karlsruhe Institute of Technology Hermann-von-Helmholtz-Platz 1 76344 Eggenstein-Leopoldshafen Germany

In article number https://***/10.1002/advs.201902170 , Hong Wang, Geoffrey A. Ozin, and co‐workers present a hetero‐nanostructure, oxygen vacancy, electronic band alignment and carrier lifetime engineering strategy of In 2 O 3− x (OH) y @Nb 2 O 5 , enabling the solar‐powered, reverse water gas shift reaction to operate at a 44‐fold higher conversion rate than pristine In 2 O 3− x (OH) y , with high selectivity and long‐term operational stability, an advance that augers well for the metal oxide hetero‐nanostructure engineering approach to the industrialization of gas‐phase CO 2 photocatalysis. Image credit: Chenxi Qian.

关键词： charge transfer CO2 conversion heterostructures photocatalysts semiconductors

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nano electrical devices and integration

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

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Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors 2006年第SUPPL.期27卷 7-10页

作者： Liu, Ming Chen, Baoqin Xie, Changqing Wang, Congshun Long, Shibing Xu, Qiuxia Li, Zhigang Yili, Chengrong Tu, Deyu Shang, Liwei Key Laboratory of Nano-Process and New Type of Devices Integrated Technology Institute of Microelectronics Chinese Acad. of Sci. Beijing 100029 China

The progress and challenge on quantum mechanism nano-devices such as single-electron transistors (SET), resonan tuneling diodes (RTD), and molecular devices are investigated and discussed. The SET with CMOS compatible technology i successfully fabricated, and the Coulomb blockade effect is clearly observed. AlAs/GaAs/In0.1Ga0.9As/GaAs/AlAs double barrier resonant tunneling diodes (DBRTDs) grown on semi-insulated GaAs substrate with molecular beam epitaxy are demonstrated. With ringed collector and thin barriers, the devices exhibit a maximum PVCR of 13.98 and a peak current density;of 89 kA/cm2 at room temperature. Finally, the progress of molecular memory with cross-bar structure is summarized.

关键词： Electron devices

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