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Growth of uniformly doped black phosphorus films through versatile atomic substitution

Science China(Information Sciences) 2023年第6期66卷 78-86页

作者： Cheng CHEN Yang LU Chang LI Xingang HOU Yongjie WANG Junrong ZHANG Junyong WANG Kai ZHANG School of Nano-Tech and Nano-Bionics University of Science and Technology of China CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications i-LabSuzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of Sciences Nano Science and Technology Institute University of Science and Technology of China

For the emerging excellent two-dimensional semiconductor black phosphorus(BP), doping has been proven as an effective way to tune its intrinsic properties. For the further development and expansion of BP-based research and application, the direct growth of doped BP films is highly desirable but still remains a challenge. In this work, the direct growth of uniformly doped-BP films on silicon substrates is achieved by a simple one-step vapor growth. The proposed decoupled feeding strategy significantly improves the effectiveness of doping and enables uniform dopant distribution in the grown films. The substitutional doping nature and high crystal quality of the grown doped films are confirmed by microscopy and crystal structural determination. Electrical transport measurement results reveal that Se and Te dopants perform mild electron doping effect and enable improve the electron mobility relative to pristine BP, while As dopant performs mild hole doping effect. It is believed that the direct growth of doped BP films in this work will facilitate the research development of BP in electronics and optoelectronics.

关键词： black phosphorus dope vapor growth thin film two-dimensional materials

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Au-nanocoated Twisted-SMF for Multiparameter Sensor

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Photonic Sensors 2025年第2期15卷 90-97页

作者： Yifei ZHAO Jiexuan GU Weiqian SHI Yuheng ZHANG Jinhui YUAN Guiyao ZHOU Guangdong Province Key Laboratory of Nano-Photonic Functional Materials and Devices South China NormalUniversityGuangzhou 510006China Guangzhou Key Laboratory for Special Fiber Photonic Devices and Applications School of InformationOptoelectronics Science and TechnologySouth China Normal UniversityGuangzhou 510006China State Key Laboratory of Information Photonics and Optical Communications Beijing University of Posts andTelecommunicationsBeijing 100876China

In this paper,we experimentally demonstrated the application of the Au-nanocoated twisted single-mode fiber(Au-TSMF)structure for the response of the ***,we fabricated an Au-TSMF,which achieved high sensitivity to refractive index(RI)and ***,based on the theory of polarization interference,we amplified its polarization sensitivity and induced the phase factor caused by polarization as a wavelength ***,we achieved the response of the Au-TSMF structure to the multiparameter,which had the sensitivity of-0.436 dB/(deg/m)for clockwise torsion,-0.156 dB/(deg/m)for anticlockwise torsion,0.3915 nm/rad for the left-handed circularly polarized state,-0.926 nm/rad for the right-handed circularly polarized state,and-692.9 dB/RIU for *** to the advantages of the all-fiber integrated system,this work holds great potential for facilitating fiber optic integrated devices for optical fiber biosensors and biomedical diagnostic applications.

关键词： Au-nanocoated twisted single-mode fiber SPR polarization interference multiparameter

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Ultra-stable Cu-based catalyst for dimethyl oxalate hydrogenation to ethylene glycol

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Chinese Journal of Chemical Engineering 2023年第8期60卷 186-193页

作者： Peipei Ai Huiqing Jin Jie Li Xiaodong Wang Wei Huang State Key Laboratory of Clean and Efficient Coal Utilization College of Chemical Engineering and TechnologyTaiyuan University of TechnologyTaiyuan 030024China CAS Key Laboratory of Nanophotonic Materials and Devices&Key Laboratory of Nanodevices and Applications i-LabSuzhou Institute of Nano-Tech and Nano-Bionics(SINANO)Chinese Academy of SciencesSuzhou 215123China

Dimethyl oxalate(DMO) hydrogenation is a crucial step in the coal to ethylene glycol(CTEG) ***, Cu catalyst supported on fibrous mesoporous silica(Cu/FMS) was synthesized via liquid phase deposition technique and applied for the DMO hydrogenation to EG. The catalyst exhibited a remarkable EG selectivity of 96.95% and maintained its activity without deactivation for 1000 h. Fibers of FMS support and liquid phase deposition technology cooperated to give high dispersion of Cu species in the Cu/FMS catalyst, resulting in a high Cu surface area. The formation of Si—O—Cu during catalyst preparation process increased the Cu^(+)/(Cu^(0)+ Cu^(+)) ratio and enhanced the thermal and valence stability of Cu *** high Cu^(+) surface area and Cu stability(thermal and valence stability) of the Cu/FMS catalyst were key factors for achieving superior EG selectivity and ultra-high stability.

关键词： Stability Cu^(+)surface area Fibrous mesoporous silica Catalyst Hydrogenation

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Electromagnetic Wave Dispersion Curve Computation for Quasi-1D Spoof Surface Plasmon Polaritons

Electromagnetic Wave Dispersion Curve Computation for Quasi-...

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2024 International Applied Computational Electromagnetics Society Symposium, ACES-China 2024

作者： Zhou, Jiefeng Zhang, Ling Li, Da Li, Er-Ping Zhejiang University Key Laboratory of Advanced Micro/Nano Electronic Devices and Smart Systems and Applications Hangzhou China

ISBN: (纸本)9798350355581

The quasi-one-dimensional (quasi-1D) spoof surface plasmon polariton (SSPP) provides a new route for optically transparent electronic devices. The dispersion curves can control the electromagnetic wave propagation characteristics of the quasi-1D SSPP by manipulating the geometric parameters. However, the dispersion curves of quasi-1D SSPP have not been analytically derived and thoroughly studied. This paper derives the dispersion curves of the quasi-1D SSPP using equivalent permittivity and permeability methods, which can accurately predict the relationship between wave number and its geometric parameters. The simulation results validate the proposed dispersion curves. Based on the dispersion curves, this paper further presents a broadband optically transparent transmission line, which can achieve high-efficiency transmission from 3.0 to 14.4 GHz. © 2024 IEEE.

关键词： Surface plasmon resonance

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Core-Shell Semiconductor-Graphene nanoarchitectures for Efficient Photocatalysis:State of the Art and Perspectives

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nano-Micro Letters 2024年第12期16卷 553-588页

作者： Jinshen Lan Shanzhi Qu Xiaofang Ye Yifan Zheng Mengwei Ma Shengshi Guo Shengli Huang Shuping Li Junyong Kang Engineering Research Center of Micro-Nano Optoelectronic Materials and Devices Ministry of EducationFujian Key Laboratory of Semiconductor Materials and ApplicationsCI Center for OSEDDepartment of PhysicsXiamen UniversityXiamen 361005People’s Republic of China

Semiconductor photocatalysis holds great promise for renewable energy generation and environment remediation,but generally suffers from the serious drawbacks on light absorption,charge generation and transport,and structural stability that limit the *** core-shell semiconductorgraphene(CSSG)nanoarchitectures may address these issues due to their unique structures with exceptional physical and chemical *** review explores recent advances of the CSSG nanoarchitectures in the photocatalytic *** starts with the classification of the CSSG nanoarchitectures by the ***,the construction methods under internal and external driving forces were introduced and compared with each ***,the physicochemical properties and photocatalytic applications of these nanoarchitectures were discussed,with a focus on their role in *** ends with a summary and some perspectives on future development of the CSSG nanoarchitectures toward highly efficient photocatalysts with extensive *** harnessing the synergistic capabilities of the CSSG architectures,we aim to address pressing environmental and energy challenges and drive scientific progress in these fields.

关键词： Core-shell semiconductor-graphene nanoarchitecture Photocatalysis Driving force Interface

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Insight into the growth mechanism of black phosphorus

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Frontiers of physics 2023年第4期18卷 111-127页

作者： Yongjie Wang Qiang Yu Jie Li Junyong Wang Kai Zhang Nano Science and Technology Institute University of Science and Technology of ChinaSuzhou 215123China CAS Key Laboratory of Nanophotonic Materials and Devices&Key Laboratory of Nanodevices and Applications i-LabSuzhou Institute of Nano-Tech and Nano-Bionics(SINANO)Chinese Academy of SciencesSuzhou 215123China

Two-dimensional(2D)black phosphorus(BP)has attracted great attention in recent years in fundamental research as well as optoelectronics *** controllable synthesis of high-quality BP is vital to the investigation of its intrinsic physical properties and versatile ***,BP was mostly synthesized under high temperatures and ***,metal flux,wet chemical and chemical vapor transport(CVT)methods had been appeared *** pulsed laser deposition(PLD)and CVT methods have been used to prepare high-quality BP thin films on silicon substrates,which is significant for its monolithic integration and practical *** meet the demand of the scalable applications of BP,the direct preparation of BP films on dielectric substrates that avoids additional transfer process,is crucial to high-performance device *** this review,the growing methods and corresponding mechanisms of BP are summarized and ***,the view on the controllable growth of large-area,high-quality BP films is envisioned.

关键词： black phosphorus growth mechanism nucleation thin films

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Electrical control of excitonic oscillator strength and spatial distribution in a monolayer semiconductor

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nano Research 2024年第9期17卷 8424-8430页

作者： Yanming Wang Junrong Zhang Tianhua Ren Meng Xia Long Fang Xiangyi Wang Xingwang Zhang Kai Zhang Junyong Wang School of Nano-Tech and Nano-Bionics University of Science and Technology of ChinaHefei 230026China CAS Key Laboratory of Nanophotonic Materials and Devices&Key Laboratory of Nanodevices and Applications i-LabSuzhou Institute of Nano-Tech and Nano-Bionics(SINANO)Chinese Academy of SciencesSuzhou 215123China Institute of Applied Physics and Materials Engineering University of MacaoTaipaMacao 999078China College of New Energy Inner Mongolia University of TechnologyHohhot 010051China

Electrical modulation of luminescence is significant to modern light-emitting *** transition metal dichalcogenides are emerging direct-bandgap luminescent materials with unique excitonic properties,and the multiple exciton complexes provide new opportunities to modulate the property of luminescence in atomically thin ***,we report an electrical control of exciton emission in the oscillator strength and spatial distribution of excitons in a monolayer *** modulation of excitonic emission intensity with a degree of modulation of~92%has been demonstrated by an electric field at room *** spatial carrier redistribution tuned by a lateral electric field results in distinct excitonic emission patterns by *** modulation approach to exciton oscillator strength and distribution provides an efficient way to investigate the exciton diffusion dynamics and to construct electrically tunable optoelectronic devices.

关键词： monolayer semiconductor exciton electrical modulation spatial distribution

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Electrically switchable helicity of light driven by the spin-orbit torque effect

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Journal of Semiconductors 2024年第11期45卷 10-12页

作者： Yongping Wei Yaping Wu College of Physical Science and Technology Engineering Research Center for Micro-Nano Optoelectronic Materials and Devices at Education MinistryKey Laboratory of Semiconductors and Applications of Fujian ProvinceXiamen UniversityXiamen 361005China

The revolution in information sharing is fundamentally supported by the highly efficient processing,storage,and transmission of data[1].For the latter,energy consumption continuously increases with the rapid developme... 详细信息

关键词： effect latter light

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Reconfigurable Three-Dimensional Thermal Dome

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Engineering 2025年第3期46卷 236-244页

作者： Yuhong Zhou Fubao Yang Liujun Xu Pengfei Zhuang Dong Wang Xiaoping Ouyang Ying Li Jiping Huang State Key Laboratory of Surface Physics&Key Laboratory of Micro-and Nano-Photonic Structures(Ministry of Education) Department of PhysicsFudan UniversityShanghai 200438China Graduate School of China Academy of Engineering Physics Beijing 100193China International Joint Innovation Center The Electromagnetics Academy at Zhejiang UniversityZhejiang UniversityHaining 314400China State Key Laboratory of Extreme Photonics and Instrumentation&Key Laboratory of Advanced Micro-Nano Electronic Devices and Smart Systems and Applications of Zhejiang Province Zhejiang UniversityHangzhou 310027China School of Materials Science and Engineering Xiangtan UniversityXiangtan 411105China

Thermal metamaterial represents a groundbreaking approach to control heat conduction,and,as a crucial component,thermal invisibility is of utmost importance for heat *** the flourishing development of thermal invisibility schemes,they still face two limitations in practical ***,objects are typically completely enclosed in traditional cloaks,making them difficult to use and unsuitable for objects with heat ***,although some theoretical proposals have been put forth to change the thermal conductivity of materials to achieve dynamic invisibility,their designs are complex and rigid,making them unsuitable for large-scale use in real threedimensional(3D)***,we propose a concept of a thermal dome to achieve 3D *** scheme includes an open functional area,greatly enhancing its usability and *** features a reconfigurable structure,constructed with simple isotropic natural materials,making it suitable for dynamic *** performance of our reconfigurable thermal dome has been confirmed through simulations and experiments,consistent with the *** introduction of this concept can greatly advance the development of thermal invisibility technology from theory to engineering and provide inspiration for other physical domains,such as direct current electric fields and magnetic fields.

关键词： Thermal domes Reconfigurable metamaterials Three-dimensional invisibility

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Unipolar p-type monolayer WSe_(2) field-effect transistors with high current density and low contact resistance enabled by van der Waals contacts

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nano Research 2024年第11期17卷 10162-10169页

作者： Miaomiao Li Xinyu Zhang Zimei Zhang Gang Peng Zhihong Zhu Jia Li Shiqiao Qin Mengjian Zhu College of Advanced Interdisciplinary Studies & Hunan Provincial Key Laboratory of Novel Nano-optoelectronic Information Materials and Devices National University of Defense Technology Changsha 410073 China Nanhu Laser Laboratory National University of Defense Technology Changsha 410073 China Hunan Key Laboratory of Two-Dimensional Materials and State Key Laboratory for Chemo/Biosensing and Chemometrics College of Chemistry and Chemical Engineering Hunan University Changsha 410082 China College of Science & Hunan Key Laboratory of Extreme Matter and Applications National University of Defense Technology Changsha 410073 China

High-performance field-effect transistors (FETs) based on atomically thin two-dimensional (2D) semiconductors have demonstrated great promise in post-Moore integrated circuits. However, unipolar p-type 2D semiconductor transistors yet remain challenging and suffer from low saturation current density (less than 10 µA·µm^(−1)) and high contact resistance (larger than 100 kΩ·µm), mainly limited by the Schottky barrier induced by the mismatch of the work-functions and the Fermi level pinning at the metal contact interfaces. Here, we overcome these two obstacles through van der Waals (vdW) integration of high work-function metal palladium (Pd) as the contacts onto monolayer WSe2 grown by chemical vapor deposition (CVD) method. We demonstrate unipolar p-type monolayer WSe2 FETs with superior device performance: room temperature on-state current density exceeding 100 µA·µm^(−1), contact resistance of 12 kΩ·µm, on/off ratio over 107, and field-effect hole mobility of ~ 103 cm2·V^(−1)·s^(−1). Electrical transport measurements reveal that the Fermi level pinning effect is completely effectively eliminated in monolayer WSe2 with vdW Pd contacts, leading to a Schottky barrier-free Ohmic contact at the metal-semiconductor junctions. Combining the advantages of large-scale vdW contact strategy and CVD growth, our results pave the way for wafer-scale fabrication of complementary-metal-oxide-semiconductor (CMOS) logic circuits based on atomically thin 2D semiconductors.

关键词： two-dimensional(2D)field-effect transistors(FETs) monolayer WSe2 van der Waals(vdW)contact on-state current hole mobility

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