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Flip-chip bonded 8-channel DFB laser array with highly uniform 400 GHz spacing and high output power for optical I/O technology

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Chinese Optics Letters 2025年第4期23卷 041402-041402页

作者： Zhao, Jie Sun, Zhenxing Dai, Pan Zhang, Jin Xu, Yanqiu Zhang, Yue Wang, Zhuoying Nie, Jiaqiang Wang, Wenxuan Xiao, Rulei Chen, Xiangfei Key Laboratory of Intelligent Optical Sensing and Manipulation The Ministry of Education National Laboratory of Solid State Microstructures College of Engineering and Applied Sciences Institute of Optical Communication Engineering Nanjing University-Tongding Joint Lab for Large-scale Photonic Integrated Circuits Nanjing University Nanjing210023 China Nanjing Branch China United Network Communications Corporation Limited Nanjing210002 China Ocean College Jiangsu University of Science and Technology Zhenjiang212003 China

In this paper, we proposed and experimentally demonstrated an 8-channel O-band distributed feedback (DFB) laser array with highly uniform 400 GHz spacing and high output power for optical input/output (I/O) technology. The grating phase is precisely controlled, and an equivalent π phase shift is implemented in the laser cavity via the reconstruction equivalent chirp (REC) technology. Anti-reflection (AR) and high-reflection (HR) films are coated on the front and rear facets, respectively, to enhance output power. The equivalent π phase shift is strategically placed near the HR film facet to improve the yield of the single longitudinal mode. Operating with a 400 GHz wavelength spacing, the proposed DFB laser array meets the continuous wave-wavelength division multiplexing multi-source agreement (CW-WDM MSA) specifications. The proposed DFB laser array is flip-chip bonded to a thin-film circuit with an aluminum nitride (AlN) submount to reduce the thermal resistance and enhance the output power. Compared to the p-side-up structure, the flip-chip bonding design significantly reduces junction temperature by 28% and increases maximum output power by approximately 20%. This design effectively lowers the thermal resistance of the chip and enhances its heat dissipation properties. At a bias current of 110 mA, the laser demonstrates wavelength deviations below 1.579 GHz and side-mode suppression ratios above 50 dB. The far-field divergence is measured at 25.8° × 30.1°, and the Lorentzian linewidth is 3.28 MHz. Increasing the bias current to 250 mA results in a laser output power exceeding 80 mW. Furthermore, the relative intensity noise (RIN) for all 8 channels is below -135.3 dB/Hz. The proposed flip-chip bonded 8-channel high-power DFB laser array demonstrates uniform wavelength spacing, high output power, and stable single longitudinal mode performance, making it a promising candidate for multiple wavelength laser sources in optical I/O technology. © 2025 Chinese Optics L

关键词： Flip chip devices

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Assessing high-energy x-ray and proton irradiation effects on electrical properties of P-GaN and N-GaN thin films

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Chinese Physics B 2023年第7期32卷 443-447页

作者：钟傲雪王磊唐蕴杨永涛王进进朱慧平吴真平唐为华李博 State Key Laboratory of Information Photonics and Optical Communications&School of Science Beijing University of Posts and TelecommunicationsBeijing 100876China Institute of Microelectronics and Key Laboratory of Science and Technology on Silicon Devices Chinese Academy of SciencesUniversity of Chinese Academy of SciencesBeijing 100029China School of Integrated Circuits&State Key Laboratory of Information Photonics and Optical Communications Beijing University of Posts and TelecommunicationsBeijing 100876China

The effects of ionizing and displacement irradiation of high-energy x-ray and 2-MeV proton on GaN thin films were investigated and compared in this *** electrical properties of both P-GaN and N-GaN,separated from power devices,were gauged for fundamental *** was found that the electrical properties of P-GaN were improved as a consequence of the disruption of the Mg-H bond induced by high-dose x-ray irradiation,as indicated by the Hall and circular transmission line ***,under a 100-Mrad(Si)x-ray dose,the specific contact resistance pc of P-GaN decreased by 30%,and the hole carrier concentration increased ***,the atom displacement damage effect of a 2-MeV proton of 1×10^(13)p/cm^(2)led to a significant degradation of the electrical properties of P-GaN,while those of N-GaN remained unchanged.P-GaN was found to be more sensitive to irradiation than N-GaN thin *** effectiveness of x-ray irradiation in enhancing the electrical properties of P-GaN thin films was demonstrated in this study.

关键词： x-ray radiation proton radiation GaN circular transmission line model(CTLM)

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Ultrafast Pulse Signal Detection Based on a Dual-transistor Structure

Ultrafast Pulse Signal Detection Based on a Dual-transistor ...

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2024 IEEE International Conference on Integrated circuits, Technologies and Applications, ICTA 2024

作者： Zhai, Zhenghao Bao, Lin Zhang, Haisu Zhang, Hao Ji, Hechen Wang, Zongwei Wang, Cuimei Cai, Yimao Huang, Shanguo Beijing University of Posts and Telecommunications State Key Laboratory of Information Photonics and Optical Communications Beijing China Peking University School of Integrated Circuits Beijing China

ISBN: (纸本)9798331530709

In this paper, we propose and experimentally demonstrate a novel method for the detection of ultrafast pulse signals, utilizing an AOS transistor-based 2T0C DRAM unit. By leveraging the ultrafast programming capability and long retention time of the 2 TOC unit, it can extend the duration of the signal, thereby achieving stable detection. The experimental results demonstrate that the fabricated InAlZnO 2T0C unit is capable of effectively capturing high-speed signals as short as 25 nanoseconds and possesses over 10 8 amplifications in the time domain for pulse signals. The stable and highly efficient detection method based on the 2 TOC unit holds promise as an ideal choice for future fast signal detection. © 2024 IEEE.

关键词： Signal detection

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Amorphous InAIZnO-based 2T0C Unit for Peak Signal Detection

Amorphous InAIZnO-based 2T0C Unit for Peak Signal Detection

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2024 IEEE International Conference on Integrated circuits, Technologies and Applications, ICTA 2024

作者： Zhang, Hao Bao, Lin Zhang, Haisu Zhai, Zhenghao Hechen Wang, Zongwei Wang, Cuimei Cai, Yimao Huang, Shanguo Beijing University of Posts and Telecommunications State Key Laboratory of Information Photonics and Optical Communications Beijing China Peking University School of Integrated Circuits Beijing China

ISBN: (纸本)9798331530709

Real-time peak detection (PD) is a fundamental task in diverse fields ranging from audio processing to telecommunication, where timely and accurate identification of signal peaks is crucial. However, conventional operational amplifier (OPA) based peak detectors suffer from significant hardware overhead and high power-consumption, making them impractical for deployment in edge devices that require low power, small form factors, and high performance. In this work, a novel peak detector based on the amorphous InAIZnO 2T0C DRAM unit is proposed for the first time to facilitate the PD tasks, achieving over f9 0% reduction in hardware overhead compared to conventional OPA-based solutions. © 2024 IEEE.

关键词： Operational amplifiers

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Secrecy performance analysis of single-input multiple-output generalized-K fading channels

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Frontiers of Information Technology and Electronic Engineering 2016年第10期17卷 1074-1084页

作者： Lei, Hong-jiang Ansari, Imran Shafique Gao, Chao Guo, Yong-cai Pan, Gao-feng Qaraqe, Khalid A. Chongqing Key Laboratory of Mobile Communications Technology Chongqing University of Posts and Telecommunications Chongqing400065 China MOE Key Laboratory of Optoelectronic Technology and Systems Chongqing University Chongqing400044 China Department of Electrical and Computer Engineering Texas A&M University at Qatar Doha Qatar Chongqing Key Laboratory of Nonlinear Circuits and Intelligent Information Processing Southwest University Chongqing400715 China

In this paper, the transmission of confidential messages through single-input multiple-output (SIMO) independent and identically generalized-K (KG) fading channels is considered, where the eavesdropper overhears the transmission from the transmitter to the receiver. Both the receiver and the eavesdropper are equipped with multiple antennas, and both active and passive eavesdroppings are considered where the channel state information of the eavesdropper’s channel is or is not available at the transmitter. The secrecy performance of SIMO KG systems is investigated. Analytical expressions for secrecy outage probability and average secrecy capacity of SIMO systems are derived via two different methods, in which KG distribution is approximated by the Gamma and mixture Gamma distributions, respectively. Numerical results are presented and verified via the Monte-Carlo simulation. © 2016, Journal of Zhejiang University Science Editorial Office and Springer-Verlag Berlin Heidelberg.

关键词： Fading channels

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Designing quenching-driven crystalline-amorphous high-entropy oxide/hydroxide heterostructures for efficient oxygen evolution reaction

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Journal of Alloys and Compounds 2025年 1032卷

作者： Zhichuan Zheng Ning Sun Xian He Bohan Deng Chih-Wen Pao Wei-Hsiang Huang Hongyi Liu Ruyue Wang Runze Yu Ming Lei Kai Huang State Key Laboratory of Information Photonics and Optical Communications School of Physical Science and Technology Beijing University of Posts and Telecommunications Beijing 100876 PR China Center for High Pressure Science and Technology Advanced Research Beijing 100193 PR China State Key Laboratory of New Ceramic Materials School of Materials Science and Engineering Tsinghua University Beijing 100084 PR China National Synchrotron Radiation Research Center 101 Hsin-Ann Road Hsinchu 300092 Taiwan Beijing Institute of Smart Energy Beijing 102209 PR China State Key Laboratory of Information Photonics and Optical Communications School of Integrated Circuits Beijing University of Posts and Telecommunications Beijing 100876 PR China

Abundant defects and plentiful active sites make amorphous hydroxide materials promising alternatives to replace commercial RuO 2 as electrocatalysts in alkaline oxygen evolution reactions (OER). Nevertheless, the inherently poor conductivity, caused by long-range disorder, limits their broader application in alkaline water electrolysis. In this work, we developed a quenching-driven strategy to controllably design heterostructures of crystalline high-entropy oxides and amorphous high-entropy hydroxides supported on an amorphous carbon composite. The amorphous substrate structure stabilizes metal compound clusters on the surface of the materials, while crystalline oxides modify the electronic structure of the amorphous phase. X-ray absorption spectroscopy (XAS) indicate that high-valence Ru doping increases the oxidation state of the transition metals. In situ Raman spectroscopy further reveals that, after Ru doping, the higher oxidation states of transition metals more readily convert into the active phase of metal oxyhydroxides during the OER. Notably, the synthesized crystalline-amorphous high-entropy oxide/hydroxide heterostructure electrocatalysts, RuMnFeCoNiO x /RuMnFeCoNiO y H z @C (Ru-HEO/HEH@C), achieve an overpotential of 244 mV at a current density of 10 mA cm −2 and exhibit a Tafel slope of 38.55 mV dec −1 , demonstrating superior activity compared to commercial RuO 2 samples. Furthermore, Ru-HEO/HEH@C demonstrates excellent electrochemical durability, with chronoamperometric measurements revealing an ultra-low degradation rate of 0.0386 mV h −1 over 360 hours of continuous operation. This work offers new insights into optimizing the electronic structure and OER activity of amorphous hydroxides through structural design.

关键词： Iron

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Ultra-high figure of merit refractive index sensor based on concentric ring and disk resonator

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Journal of Optics (India) 2023年第1期52卷 120-127页

作者： Guo, Hui Chen, Zongqiang Qi, Jiwei Jiang, Meiling Chen, Jing Li, Yudong Sun, Qian MOE Key Laboratory of Weak Light Nonlinear Photonics Tianjin Key Laboratory of Photonics Material and Technology School of Physics Nankai University Tianjin 300071 China Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications Institute of Photonics Technology Jinan University Guangzhou 510632 China

A plasmonic refractive index sensor based on metal–insulator–metal (MIM) waveguide coupled with concentric ring and disk resonator (CRDR) is proposed in this work. The plasmonic refractive index sensor with a sensitivity of 1039 nm/RIU and a high figure of merit (FOM) of 401 in the near-infrared region is numerically investigated using a finite element method (FEM). The physical mechanism of high Q factor of the mode of CRDR can be explained by the coupled mode theory. The structural parameters of the plasmonic sensor are also discussed. The structural parameters can be changed to adjust the sensor properties. Furthermore, the application of proposed plasmonic sensor in bio-sensing is analyzed. © 2022, The Author(s), under exclusive licence to The optical Society of India.

关键词： Coupled mode theory Figure of merit Plasmonics Refractive index sensor

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An isolated symmetrical 2T2R cell enabling high precision and high density for RRAM-based in-memory computing

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Science China(Information Sciences) 2024年第5期67卷 287-294页

作者： Yaotian LING Zongwei WANG Yuhang YANG Lin BAO Shengyu BAO Qishen WANG Yimao CAI Ru HUANG School of Integrated Circuits Beijing Advanced Innovation Center for Integrated Circuits Peking University State Key Laboratory of Information Photonics and Optical Communications Beijing University of Posts and Telecommunications

In-memory computing(IMC), leveraging emerging memories, holds significant promise in overcoming memory limitations and improving energy efficiency. However, the prevailing IMC array structure based on serially connected transistors and memory cells(1T1R/2T2R), along with the signed weight mapping scheme, can lead to asymmetrical weight sensing issues(AWS) due to electrical asymmetry within the1T1R/2T2R structure, particularly in highly scaled cells where the transistor's resistance becomes significant. In this paper, we propose and fabricate an electrically symmetric memory cell based on a physically isolated 2T2R structure for IMC. This design aims to enhance the precision and density of RRAM-based IMC arrays. The 2T2R cells are manufactured using the back-end-of-line(BEOL) process of a commercial40 nm technology platform. The feasibility of this design is verified through measured and simulated results,showcasing its capability to address the issue of AWS. Compared to conventional 2T2R cells, this design achieves a considerably smaller transistor footprint without compromising accuracy, while also improving integration density by 42.2%. These innovative memory cell advancements have the potential to further advance high-energy-efficient IMC technology.

关键词： RRAM 2T2R multi-level storage weight asymmetry in-memory computing

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Broadband Polarization-Insensitive Metalenses with High Focusing Efficiency Based on Inverse Design 21

Broadband Polarization-Insensitive Metalenses with High Focu...

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21st International Conference on optical communications and Networks, ICOCN 2023

作者： Huang, Junjing Zhang, Enge Zhang, Lei Duan, Xiaofeng Liu, Kai Huang, Yongqing Ren, Xiaomin Beijing University of Posts and Telecommunications State Key Laboratory of Information Photonics and Optical Communications Beijing China Beijing University of Posts and Telecommunications School of Integrated Circuits Beijing China

ISBN: (纸本)9798350343502

In this paper, we propose an broadband planar metalens that exhibits efficient operation within the wavelength range of 1270 to 2000nm and is insensitive to polarization. Compare with no metalens, the metalens can enhance the transmissivity of incident light by approximately 10%. In the operational wavelength range, the average focusing efficiency of the metalens is 56%, with a maximum focusing efficiency of 70.7%. And the average full width at half maximum (FWHM) of this structure is 0.5526μm. In the design process, we propose a new inverse design algorithm that is better suited for nanophotonic device design. The concept behind this new algorithm has significant implications for other inverse design algorithms. © 2023 IEEE.

关键词： Efficiency

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Improvement of Ga_(2)O_(3)vertical Schottky barrier diode by constructing NiO/Ga_(2)O_(3)heterojunction

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Journal of Semiconductors 2024年第4期45卷 63-68页

作者： Xueqiang Ji Jinjin Wang Song Qi Yijie Liang Shengrun Hu Haochen Zheng Sai Zhang Jianying Yue Xiaohui Qi Shan Li Zeng Liu Lei Shu Weihua Tang Peigang Li School of Integrated Circuits&State Key Laboratory of Information Photonics and Optical Communications Beijing University of Posts and TelecommunicationsBeijing 100876China College of Integrated Circuit Science and Engineering Nanjing University of Posts and TelecommunicationsNanjing 210023China Beijing Microelectronics Technology Institute Beijing 100076China

The high critical electric field strength of Ga_(2)O_(3)enables higher operating voltages and reduced switching losses in power electronic *** Schottky metals and epitaxial films are essential for further enhancing device *** this work,the fabrication of vertical Ga_(2)O_(3)barrier diodes with three different barrier metals was carried out on an n--Ga_(2)O_(3)homogeneous epitaxial film deposited on an n+-β-Ga_(2)O_(3)substrate by metal-organic chemical vapor deposition,excluding the use of edge *** ideal factor,barrier height,specific on-resistance,and breakdown voltage characteristics of all devices were investigated at room *** addition,the vertical Ga_(2)O_(3)barrier diodes achieve a higher breakdown volt-age and exhibit a reverse leakage as low as 4.82×10^(-8)A/cm^(2)by constructing a NiO/Ga_(2)O_(3)***,Ga_(2)O_(3)power detailed investigations into Schottky barrier metal and NiO/Ga_(2)O_(3)heterojunction of Ga_(2)O_(3)homogeneous epitaxial films are of great research potential in high-efficiency,high-power,and high-reliability applications.

关键词： Ga_(2)O_(3) Schottky barrier diode NiO/Ga_(2)O_(3)heterojunction

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