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检索条件"机构=Key Laboratory of Nonlinear Circuits and Optical Communications"

共 124 条记录，以下是71-80 订阅

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On-chip Spectrometer with Cascaded Micro-ring Resonator and Mach-Zehnder Interferometers

On-chip Spectrometer with Cascaded Micro-ring Resonator and ...

引用

Progress in Electromagnetic Research Symposium (PIERS)

作者： Tongxin Yang Shiqi Zhang Lei Zhang State Key Laboratory of Information Photonics and Optical Communications Beijing University of Posts and Telecommunications Beijing China School of Integrated Circuits Beijing University of Posts and Telecommunications Beijing China

ISBN: (数字)9798350375909

ISBN: (纸本)9798350375916

We demonstrate a compact on-chip spectrometer by cascading a tunable micro-ring resonator (MRR) and a Mach-Zehnder interferometer (MZI)-based 4-channel demultiplexer. The MRR acts as a high-fineness optical filter with tunable periodic narrow passbands. The function of the MZI-based demultiplexer is to separate passbands of the MRR to be measured by different photodetectors. The 3 dB bandwidth of the MRR's passband is 0.15 nm, which determines the resolution of the spectrometer. We fabricate the device on SOI substrate and verify its feasibility by measuring two laser lines with different wavelength spacing. We also discuss possible ways to further improve the resolution of the device.

关键词： Mach-Zehnder interferometers Q-factor Wavelength measurement optical resonators Bandwidth System-on-chip Passband

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Silicon Waveguide Cross-sectional Dimension Estimation Based on Effective Refractive Index Extraction

Silicon Waveguide Cross-sectional Dimension Estimation Based...

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Progress in Electromagnetic Research Symposium (PIERS)

作者： Enge Zhang Xiaoran Zhu Lei Zhang School of Integrated Circuits Beijing University of Posts and Telecommunications Beijing China State Key Laboratory of Information Photonics and Optical Communications Beijing University of Posts and Telecommunications Beijing China

ISBN: (数字)9798350375909

ISBN: (纸本)9798350375916

We experimentally demonstrate a novel method for acquiring the cross-sectional measurements of silicon-on-insulation (SOI) waveguides. This technique utilizes two micro-rings with distinct perimeters and an algorithm to evaluate the cross-sectional dimensions and the effective refractive index (n eff ) without resorting to chip cutting. This technique is essential in comprehending the factual output capability of the manufacturing facility, the practical waveguide structure of the SOI chip and the actual performance of the devices on the chip, and is of great importance for future chip design.

关键词： Performance evaluation Semiconductor device measurement Accuracy Refractive index Estimation Electromagnetic waveguides Silicon

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A New “Stepped Particle Swarm Optimization” for Inverse Design of Nanophotonic Devices

A New “Stepped Particle Swarm Optimization” for Inverse De...

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Asia communications and Photonics Conference and Exhibition (ACP)

作者： Junjing Huang Enge Zhang Xiaofeng Duan Kai Liu Yongqing Huang Xiaomin Ren State Key Laboratory of Information Photonics and Optical Communications Beijing University of Posts and Telecommunications Beijing China School of Integrated Circuits Beijing University of Posts and Telecommunications Beijing China

In this paper, we propose a new “stepped particle swarm optimization”(SPSO) for the reverse design of nanophotonic devices. Compared with the traditional “particle swarm optimization”(PSO), this method has a fast-rising speed, is easy to jump out of local extrema, and has a wide range of application prospects. It can break through the limitations brought by the traditional PSO and obtain better device performance. Also, the SPSO can be used in the structural design of a large number of optoelectronic devices, such as grating couplers, wavelength division multiplexers, mode multiplexers, mode converters, etc. The feasibility and advantages of SPSO are verified by the design of a subwavelength convergence grating that is monolithically integrated with the detector. The SPSO is of great significance in the design of nanophotonic devices with large parameter space.

关键词： Performance evaluation Detectors Couplers Wavelength division multiplexing Optoelectronic devices Nanoscale devices Gratings

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Silicon Integrated Computational Spectrometer with Cascaded Add-Drop Micro-Ring Resonators

Silicon Integrated Computational Spectrometer with Cascaded ...

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International Conference on optical communications and Networks (ICOCN)

作者： Kai Wang Zeruihong She Hongren Tan Tianyue Zhang Lei Zhang State Key Laboratory of Information Photonics and Optical Communications Beijing University of Posts and Telecommunications Beijing China School of Integrated Circuits Beijing University of Posts and Telecommunications Beijing China

We report the design and implementation of an integrated computational spectrometer on a silicon-on-insulator substrate. The device has 31 filter units, which are cascaded add-drop micro-ring resonators with different... 详细信息

ISBN: (数字)9798350367652

ISBN: (纸本)9798350367669

关键词： optical filters Resonator filters Silicon-on-insulator Silicon photonics optical fiber communication Structural engineering Proposals

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Broadband Polarization-Insensitive Metalenses with High Focusing Efficiency Based on Inverse Design

Broadband Polarization-Insensitive Metalenses with High Focu...

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International Conference on optical communications and Networks (ICOCN)

作者： Junjing Huang Enge Zhang Lei Zhang Xiaofeng Duan Kai Liu Yongqing Huang Xiaomin Ren State Key Laboratory of Information Photonics and Optical Communications Beijing University of Posts and Telecommunications Beijing China School of Integrated Circuits Beijing University of Posts and Telecommunications Beijing China

In this paper, we propose an broadband planar metalens that exhibits efficient operation within the wavelength range of 1270 to 2000nm and is insensitive to polarization. Compare with no metalens, the metalens can enhance the transmissivity of incident light by approximately 10%. In the operational wavelength range, the average focusing efficiency of the metalens is 56%, with a maximum focusing efficiency of 70.7%. And the average full width at half maximum (FWHM) of this structure is 0.5526µm. In the design process, we propose a new inverse design algorithm that is better suited for nanophotonic device design. The concept behind this new algorithm has significant implications for other inverse design algorithms.

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Polarization-insensitive 1 × 2 Multi-mode Interference Coupler on SOI

Polarization-insensitive 1 × 2 Multi-mode Interference Coup...

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Progress in Electromagnetic Research Symposium (PIERS)

作者： Liuwei Chen Enge Zhang Lei Zhang State Key Laboratory of Information Photonics and Optical Communications Beijing University of Posts and Telecommunications Beijing China School of Integrated Circuits Beijing University of Posts and Telecommunications Beijing China

ISBN: (数字)9798350375909

ISBN: (纸本)9798350375916

We demonstrate a polarization-insensitive multimode interference (MMI) coupler on SOI platform with 220 nm top silicon. The minimum feature size of the device is 235 nm. The simulated and measured excess losses for TE/TM modes at 1550 nm are 0.07 dB/0.08 dB and 0.16dB/0.12dB, respectively. Over the C band, the device exhibits an excess loss of less than 0.5 dB and 0.8 dB in simulation and measurement, respectively.

关键词： C-band Interference Couplers Loss measurement Silicon Electromagnetics

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Polarization-Insensitive 1×2 Power Divider on SOI

Polarization-Insensitive 1×2 Power Divider on SOI

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International Conference on optical communications and Networks (ICOCN)

作者： Liuwei Chen Enge Zhang Tongxin Yang Shiqi Zhang Xiaoran Zhu Lei Zhang State Key Laboratory of Information Photonics and Optical Communications Beijing University of Posts and Telecommunications Beijing China School of Integrated Circuits Beijing University of Posts and Telecommunications Beijing China

We report the design of two polarization-insensitive $1 \times 2$ power dividers on SOI with 220nm top silicon. The multimode interference coupler is within 4 $\mu \mathrm{m} \times 140 \mu \mathrm{m}$. For the type I device, the excess losses for both the TE and TM modes at 1550 nm are $\lt 0.1$ dB. For the type II device, the excess losses for the TE and TM modes are $\lt 0.55$ dB over the C band. We also analyze their performance deteriorations due to ±20 nm fabrication errors in width.

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Micro-Spectrometer with a Beam Splitting Network with Distributed All-Pass Micro-Ring Resonators

Micro-Spectrometer with a Beam Splitting Network with Distri...

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International Conference on optical communications and Networks (ICOCN)

作者： Hongren Tan Kai Wang Zeruihong She Tianyue Zhang Lei Zhang State Key Laboratory of Information Photonics and Optical Communications Beijing University of Posts and Telecommunications Beijing China School of Integrated Circuits Beijing University of Posts and Telecommunications Beijing China

ISBN: (数字)9798350367652

ISBN: (纸本)9798350367669

We demonstrate an integrated computational spectrometer with 62 all-pass micro-ring resonators (MRRs), which are distributed in a beam splitting network composed by 31 multi-mode interferometers (MMIs). Measured results show that it has a resolution of 200pm in the C-band. It can be further improved through the optimization of structural parameters and channel number.

关键词： Spectroscopy Semiconductor device measurement C-band Silicon optical fiber communication Structural engineering Resonators

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Dark current analysis of pπMn T2SL mid-wavelength infrared detector structure 3

Dark current analysis of pπMn T2SL mid-wavelength infrared ...

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3rd International Computing Imaging Conference, CITA 2023

作者： Zhao, Yaqi Han, Lihong Guan, Xiaoning Jia, Baonan Sun, Tong Zhou, Feng Lu, Pengfei State Key Laboratory of Information Photonics and Optical Communications Beijing University of Posts and Telecommunications Beijing100876 China School of Electronic Engineering Beijing University of Posts and Telecommunications Beijing100876 China School of Integrated Circuits Beijing University of Posts and Telecommunications Beijing100876 China School of information and communication engineering Beijing University of Posts and Telecommunications Beijing100876 China

ISBN: (纸本)9781510671409

InAs/GaSb type II superlattice (T2SL) has become a highly competitive material for infrared (IR) detector. We designed a pπMn mid-wavelength infrared detector based on the InAs/GaSb T2SL materials, and studied the influence of the detector structural parameters on the dark current density magnitude and the quantum efficiency (QE) from the theoretical simulation level. Through the simulation of the detector material and structure, the dark current density characteristics at various doping concentrations, the dark current density characteristics and QE at different superlattice material thicknesses, and the temperature dependence of the dark current level are calculated. The M-structure barrier is inserted in between the π and n layers of the T2SL infrared detector structure, and the overall dark current level can be effectively reduced. Under the condition of 77 K, according to the final simulation data results, the dark current density can achieve 9.46×10-8 A/cm2, and the peak QE can achieve 34.3%. © 2023 SPIE.

关键词： Infrared detectors

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Hybrid-Domain In-Memory Polynomial Acceleration based on 40nm RRAM Multi-Core Chip for Machine Vision Calibration

Hybrid-Domain In-Memory Polynomial Acceleration based on 40n...

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International Electron Devices Meeting (IEDM)

作者： Lin Bao Zongwei Wang Qishen Wang Yuhang Yang Yi Gao Linbo Shan Jingwei Sun Yunfan Yang Yaotian Ling Haisu Zhang Cuimei Wang Han Xiao Le Ye Ao Guo Ling Shen Wenbing Gu Gaoming Feng Chen Li Shoumian Chen Yuhang Zhao Shanguo Huang Yimao Cai Ru Huang School of Integrated Circuits Beijing Advanced Innovation Center for Integrated Circuits Peking University Beijing China State Key Laboratory of Information Photonics and Optical Communications Beijing University of Posts and Telecommunications Beijing China ICRD Shanghai China

For the first time, a novel hybrid-domain (time, analog, and digital) in-memory polynomial computing is proposed and experimentally demonstrated using a RRAM-based expandable ternary multiplier (ETM) to accelerate polynomial transformation (PT) algorithms. The ETM is constructed based on 1T1R cell, which subtly implements multiplication of two multibit signed operands by orchestrating the inputs on the word lines (time-domain sequence) and bit lines (analog voltage-domain) to enable ternary multiplication (TM). The subsequent accumulation is completed through peripheral shift-adder (digital-domain). A 40nm RRAM chip with 30 integrated four-quadrant TM arrays are designed and implemented to realize high-order parallel matrix-vector computation and PT acceleration through synthesizing the hybrid-domain in-memory polynomial computation, demonstrating software-comparable calibration of lens distortion in machine vision applications with high calibration throughput (158Mpixels/s) and energy-efficiency (3.81Gpixels/W).

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