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Two-dimensional materials for future information technology: status and prospects

Science China(Information Sciences) 2024年第6期67卷 1-147页

作者： Hao QIU Zhihao YU Tiange ZHAO Qi ZHANG Mingsheng XU Peifeng LI Taotao LI Wenzhong BAO Yang CHAI Shula CHEN Yiqi CHEN Hui-Ming CHENG Daoxin DAI Zengfeng DI Zhuo DONG Xidong DUAN Yuhan FENG Yu FU Jingshu GUO Pengwen GUO Yue HAO Jun HE Xiao HE Jingyi HU Weida HU Zehua HU Xinyue HUANG Ziyang HUANG Ali IMRAN Ziqiang KONG Jia LI Qian LI Weisheng LI Lei LIAO Bilu LIU Can LIU Chunsen LIU Guanyu LIU Kaihui LIU Liwei LIU Sheng LIU Yuan LIU Donglin LU Likuan MA Feng MIAO Zhenhua NI Jing NING Anlian PAN Tian-Ling REN Haowen SHU Litao SUN Yue SUN Quanyang TAO Zi-Ao TIAN Dong WANG Hao WANG Haomin WANG Jialong WANG Junyong WANG Wenhui WANG Xingjun WANG Yeliang WANG Yuwei WANG Zhenyu WANG Yao WE... Department of Applied Physics The Hong Kong Polytechnic University Key Laboratory for Micro-Nano Physics and Technology of Hunan Province College of Materials Science and EngineeringHunan University College of Integrated Circuits Zhejiang University Shenzhen Geim Graphene Center Shenzhen Key Laboratory of Layered Materials for Value-Added ApplicationsTsinghua-Berkeley Shenzhen Institute & Institute of Materials ResearchTsinghua Shenzhen International Graduate SchoolTsinghua University State Key Laboratory of Extreme Photonics and Instrumentation College of Optical Science and EngineeringInternational Research Center for Advanced PhotonicsZijingang CampusZhejiang University National Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications i-LabSuzhou Institute of Nano-Tech and Nano-Bionics (SINANO)Chinese Academy of Sciences College of Chemistry and Chemical Engineering Hunan University Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education) Department of PhysicsRenmin University of China School of Integrated Circuits Beijing National Research Center for Information Science and Technology (BNRist)Tsinghua University School of Electronic Science and Engineering Nanjing University The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology Shaanxi Joint Key Laboratory of GrapheneSchool of MicroelectronicsXidian University Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education School of Physics and TechnologyWuhan University School of Integrated Circuits Huazhong University of Science and Technology Center for Nanochemistry (CNC) Beijing Science and Engineering Center for NanocarbonsBeijing National Laboratory for Molecular SciencesCollege of Chemistry and Molecular EngineeringPeking University State Key Laboratory for Artificial Microstruct

Over the past 70 years, the semiconductor industry has undergone transformative changes,largely driven by the miniaturization of devices and the integration of innovative structures and materials. Two-dimensional(2D) materials like transition metal dichalcogenides(TMDs) and graphene are pivotal in overcoming the limitations of silicon-based technologies, offering innovative approaches in transistor design and functionality, enabling atomic-thin channel transistors and monolithic 3D integration. We review the important progress in the application of 2D materials in future information technology, focusing in particular on microelectronics and optoelectronics. We comprehensively summarize the key advancements across material production, characterization metrology, electronic devices, optoelectronic devices, and heterogeneous integration on silicon. A strategic roadmap and key challenges for the transition of 2D materials from basic research to industrial development are outlined. To facilitate such a transition, key technologies and tools dedicated to 2D materials must be developed to meet industrial standards, and the employment of AI in material growth, characterizations, and circuit design will be essential. It is time for academia to actively engage with industry to drive the next 10 years of 2D material research.

关键词： two-dimensional (2D) materials information technology production technology standardization of characterization microelectronic devices optoelectronic devices multi-functional integration

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A New “Stepped Particle Swarm Optimization” for Inverse Design of Nanophotonic Devices

A New “Stepped Particle Swarm Optimization” for Inverse De...

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Asia communications and Photonics Conference and Exhibition (ACP)

作者： Junjing Huang Enge Zhang Xiaofeng Duan Kai Liu Yongqing Huang Xiaomin Ren State Key Laboratory of Information Photonics and Optical Communications Beijing University of Posts and Telecommunications Beijing China School of Integrated Circuits Beijing University of Posts and Telecommunications Beijing China

In this paper, we propose a new “stepped particle swarm optimization”(SPSO) for the reverse design of nanophotonic devices. Compared with the traditional “particle swarm optimization”(PSO), this method has a fast-rising speed, is easy to jump out of local extrema, and has a wide range of application prospects. It can break through the limitations brought by the traditional PSO and obtain better device performance. Also, the SPSO can be used in the structural design of a large number of optoelectronic devices, such as grating couplers, wavelength division multiplexers, mode multiplexers, mode converters, etc. The feasibility and advantages of SPSO are verified by the design of a subwavelength convergence grating that is monolithically integrated with the detector. The SPSO is of great significance in the design of nanophotonic devices with large parameter space.

关键词： Performance evaluation Detectors Couplers Wavelength division multiplexing Optoelectronic devices Nanoscale devices Gratings

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A Low-Latency and High-Performance SCL Decoder with Frame-Interleaving

A Low-Latency and High-Performance SCL Decoder with Frame-In...

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IEEE International Symposium on circuits and Systems (ISCAS)

作者： Leyu Zhang Yuqing Ren Yifei Shen Wuyang Zhou Alexios Balatsoukas-Stimming Chuan Zhang Andreas Burg CAS Key Laboratory of Wireless-Optical Communications University of Science and Technology of China (USTC) China Telecommunication Circuits Laboratory École Polytechnique Fédérale de Lausanne (EPFL) Switzerland Department of Electrical Engineering Eindhoven University of Technology Netherlands Lab of Efficient Architectures for Digital-Communication and Signal-Processing (LEADS) Southeast University China

ISBN: (数字)9798350330991

ISBN: (纸本)9798350331004

In this paper, we describe a frame-interleaving hardware architecture for a generalized node-based successive cancellation list (SCL) decoder. By efficiently reusing otherwise idle computational units, two independent frames can be decoded simultaneously, resulting in a significant throughput gain. Based on this new architecture, we also exploit graph ensembles to diversify the decoding, enhancing the error-correcting performance by 0.28 dB and reducing the worst-case latency for serial graph processing by over 32%. Implementation results show that the proposed SCL decoder with frame-interleaving architecture achieves a throughput of 7.15 Gbps and an area efficiency of 37.63 Gbps/mm 2 , which is 1.56× and 1.11× better than the state-of-the-art node-based SCL decoders.

关键词： Codes circuits and systems Computer architecture Throughput Hardware Decoding Computational efficiency

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Highly stable power control for chip-based continuous-variable quantum key distribution system

arXiv

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arXiv 2024年

作者： Bian, Yiming Li, Yang Xu, Xuesong Zhang, Tao Pan, Yan Huang, Wei Yu, Song Zhang, Lei Zhang, Yichen Xu, Bingjie State Key Laboratory of Information Photonics and Optical Communications Beijing University of Posts and Telecommunications Beijing100876 China School of Electronic Engineering Beijing University of Posts and Telecommunications Beijing100876 China Science and Technology on Communication Security Laboratory Institute of Southwestern Communication Chengdu610041 China School of Integrated Circuits Beijing University of Posts and Telecommunications Beijing100876 China

Quantum key distribution allows secret key generation with information theoretical security. It can be realized with photonic integrated circuits to benefit the tiny footprints and the large-scale manufacturing capacity. Continuous-variable quantum key distribution is suitable for chip-based integration due to its compatibility with mature optical communication devices. However, the quantum signal power control compatible with the mature photonic integration process faces difficulties on stability, which limits the system performance and causes the overestimation of secret key rate that opens practical security loopholes. Here, a highly stable chip-based quantum signal power control scheme based on a biased Mach-Zehnder interferometer structure is proposed, theoretically analyzed and experimentally implemented with standard silicon photonic techniques. Simulations and experimental results show that the proposed scheme significantly improves the system stability, where the standard deviation of the secret key rate is suppressed by an order of magnitude compared with the system using traditional designs, showing a promising and practicable way to realize highly stable continuous-variable quantum key distribution system on chip. Copyright © 2024, The Authors. All rights reserved.

关键词： Silicon photonics

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A 32Gb/s NRZ Low-Bias DFB Driver with Frequency Boosting for High Efficiency Data Transmission

A 32Gb/s NRZ Low-Bias DFB Driver with Frequency Boosting for...

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IEEE International Symposium on circuits and Systems (ISCAS)

作者： Yang Min Yi Zhang Tao Yang Leliang Li Guike Li Zhao Zhang Jian Liu Nanjian Wu Yonghui Lin Huiyao Peng Jingbo Shi Nan Qi Institute of Semiconductors Chinese Academy of Sciences Beijing China University of Chinese Academy of Sciences Beijing China UX High-Speed IC Co. LTD. Xiamen China State Key Laboratory of Information Photonics and Optical Communications School of Integrated Circuits Beijing University of Posts and Telecommunications Beijing China

ISBN: (数字)9798350330991

ISBN: (纸本)9798350331004

This paper presents a 32Gb/s non-return-to-zero (NRZ) distributed feedback (DFB) laser diode driver (LDD) fabricated in 65nm CMOS. The driver is directly wire-bonded to the laser diode without AC-coupling capacitors, which simplifies the packaging and ensures high bandwidth (BW). To improve power efficiency, the active back-termination (ABT) structure is employed to absorb signal reflections with lower power. A continuous time linear equalizer (CTLE), a 3-stage current mode logic (CML) buffer and a pre-driver are employed to compensate the channel loss and achieve a bandwidth extension by providing an estimated gain boosting of 7.5dB at high frequency. The clear electrical eye-diagram of the driver is obtained beyond 40Gb/s, while the measured optical transmission data-rate can still exceed 32Gb/s with a rms-jitter of 2ps. According to the experimental results, the bias current and modulation current of the driver are 40mA and 40mApp, respectively, where the power consumption is 390mW.

关键词： Power demand Bandwidth optical variables measurement Packaging Boosting Reflection Diode lasers

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Continuous-variable quantum key distribution over 28.6 km fiber with an integrated silicon photonic receiver chip

arXiv

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arXiv 2024年

作者： Bian, Yiming Pan, Yan Xu, Xuesong Zhao, Liang Li, Yang Huang, Wei Zhang, Lei Yu, Song Zhang, Yichen Xu, Bingjie State Key Laboratory of Information Photonics and Optical Communications Beijing University of Posts and Telecommunications Beijing100876 China School of Electronic Engineering Beijing University of Posts and Telecommunications Beijing100876 China Science and Technology on Communication Security Laboratory Institute of Southwestern Communication Chengdu610041 China School of Integrated Circuits Beijing University of Posts and Telecommunications Beijing100876 China

Quantum key distribution, which ensures information-theoretically secret key generation, is currently advancing through photonic integration to achieve high performance, cost reduction and compact size, thereby facilitating the large-scale deployment. Continuous-variable quantum key distribution is an attractive approach for photonic integrations due to its compatibility with off-the-shelf optical communication devices. However, its chip-based systems have encountered significant limitations primarily related to the shot-noise-limited receiver design, which demands low noise, wide bandwidth, high clearance and well stability. Here, we report the implementation of a real local oscillator continuous-variable quantum key distribution system with an integrated silicon photonic receiver chip. Thanks to the well-designed chip-based homodyne detectors with a bandwidth up to 1.5 GHz and a clearance up to 7.42 dB, the transmission distance of the system has been extended to 28.6 km, achieving a secret key generation rate of Mbps level. This technological advancement enables the quantum key distribution systems with photonic integrated receivers to achieve the coverage in both access network scenarios and short-distance metropolitan interconnections, paving the way for the development of the next-generation quantum key distribution networks on a large scale. Copyright © 2024, The Authors. All rights reserved.

关键词： Quantum cryptography

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Energy-efficient variable optical attenuator on SOI with folded waveguides and heaters

Energy-efficient variable optical attenuator on SOI with fol...

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International Conference on optical communications and Networks (ICOCN)

作者： Shiqi Zhang Tongxin Yang Xiaoran Zhu Enge Zhang Liuwei Chen Zilong Liu Xu Yang Xiuli Fu Lei Zhang State Key Laboratory of Information Photonics and Optical Communications Beijing University of Posts and Telecommunications Beijing China School of Integrated Circuits Beijing University of Posts and Telecommunications Beijing China The 54th Research Institute of China Electronic Technology Group Corporation Shijiazhuang China

We report a variable optical attenuator (VOA) on silicon-on-insulator (SOI) with folded silicon waveguides and TiW heaters to improve the thermal efficiency. The measured extinction ratio of the device is around 20.4 dB with a power consumption of 10.2 mW. The rise and fall times are 17.2 μs and 17.55 μs, respectively.

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Extraction of group refractive index of silicon waveguide using two racetrack resonators

Extraction of group refractive index of silicon waveguide us...

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International Conference on optical communications and Networks (ICOCN)

作者： Xiaoran Zhu Enge Zhang Tongxin Yang Shiqi Zhang Liuwei Chen Zilong Liu Xu Yang Lei Zhang State Key Laboratory of Information Photonics and Optical Communications Beijing University of Posts and Telecommunications Beijing China School of Integrated Circuits Beijing University of Posts and Telecommunications Beijing China The 54th Research Institute of China Electronic Technology Group Corporation Shijiazhuang China

We present the extraction of group refractive index of a silicon waveguide of $450 \mathrm{~nm} \times 220 \mathrm{~nm}$ with a slab of 70 nm using the spectral responses of two racetrack resonators with perimeters of $405.66 \mu \mathrm{m}$ and $505.66 \mu \mathrm{m}$, respectively. We assume a cubic polynomial relation between the effective refractive index and the wavelength. An analytic expression for the group refractive indexes of both straight and bend waveguides can be obtained using the two measured spectra. The calculated $n_{\mathrm{g}}$ at 1550 nm is 3.922. This method offers a simple calibration tool in the optical delay line design.

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Compact Low-Loss Dual-Mode Silicon Waveguide Bend with Simple Geometry

Compact Low-Loss Dual-Mode Silicon Waveguide Bend with Simpl...

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International Conference on optical communications and Networks (ICOCN)

作者： Enge Zhang Shiqi Zhang Junjing Huang Xiaoran Zhu Tongxin Yang Liuwei Chen Yu Zhang Xu Yang Lei Zhang State Key Laboratory of Information Photonics and Optical Communications Beijing University of Posts and Telecommunications Beijing China School of Integrated Circuits Beijing University of Posts and Telecommunications Beijing China The 54th Research Institute of China Electronic Technology Group Corporation Shijiazhuang China

A silicon waveguide bend with a width of 900nm and an effective radius of 3µm is proposed, which supports both TE 0 and TE 1 modes while maintaining low insertion loss and crosstalk. An adaptive particle swarm optimization algorithm is proposed for the bend waveguide design, enabling automated generation of optimal structures with minimal human intervention. The device is fabricated using electron beam lithography. The measured insertion losses for TE 0 and TE 1 modes are below 0.02 dB and 0.09 dB/90°, respectively, across the entire C-band. The measured inter-mode crosstalk is below −22.4dB per 90°.

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Integrated 4-channel wavelength selective switch based on second-order micro-ring resonators

Integrated 4-channel wavelength selective switch based on se...

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International Conference on optical communications and Networks (ICOCN)

作者： Tongxin Yang Shiqi Zhang Zilong Liu Xiaoran Zhu Enge Zhang Liuwei Chen Xu Yang Lei Zhang State Key Laboratory of Information Photonics and Optical Communications Beijing University of Posts and Telecommunications Beijing China School of Integrated Circuits Beijing University of Posts and Telecommunications Beijing China The 54th Research Institute of China Electronic Technology Group Corporation Shijiazhuang China

We report a 4-channel wavelength selective switch (WSS) with four second-order micro-ring resonators (MRRs). Each MRR has a flat-top spectrum and are tuned with two micro-heaters. The WSS exhibits a 3dB bandwidth of ~...

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