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Achieving highly-efficient H2S gas sensor by flower-like SnO_(2)–SnO/porous GaN heterojunction

Chinese Physics B 2023年第2期32卷 193-200页

作者：刘增都灵张少辉边昂方君鹏邢晨阳李山汤谨诚郭宇锋唐为华 College of Integrated Circuit Science and Engineering Nanjing University of Posts and TelecommunicationsNanjing 210023China National and Local Joint Engineering Laboratory for RF Integration and Micro-Packing Technologies Nanjing University of Posts and TelecommunicationsNanjing 210023China School of Electronic and Information Engineering Jinling Institute of TechnologyNanjing 211169China Institute of Microscale Optoelectronics Shenzhen UniversityShenzhen 518060China Key Laboratory of Luminescence and Optical Information of Ministry of Education Institute of Optoelectronic TechnologyBeijing Jiaotong UniversityBeijing 100044China School of Integrated Circuits Tsinghua UniversityBeijing 100044China Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education College of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen 518060China State Key Laboratory of Information Photonics and Optical Communications School of ScienceBeijing University of Posts and TelecommunicationsBeijing 100876China

A flower-like SnO_(2)–SnO/porous Ga N(FSS/PGaN) heterojunction was fabricated for the first time via a facile spraying process, and the whole process also involved hydrothermal preparation of FSS and electrochemical wet etching of GaN,and SnO_(2)–SnO composites with p–n junctions were loaded onto PGaN surface directly applied to H_(2)S sensor. Meanwhile,the excellent transport capability of heterojunction between FSS and PGaN facilitates electron transfer, that is, a response time as short as 65 s and a release time up to 27 s can be achieved merely at 150℃ under 50 ppm H_(2)S concentration, which has laid a reasonable theoretical and experimental foundation for the subsequent PGaN-based heterojunction gas *** lowering working temperature and high sensitivity(23.5 at 200 ppm H2S) are attributed to the structure of PGaN itself and the heterojunction between SnO_(2)–SnO and PGaN. In addition, the as-obtained sensor showed ultra-high test *** simple design strategy of FSS/PGaN-based H_(2)S sensor highlights its potential in various applications.

关键词： gas sensor SnO_(2)–SnO porous GaN heterojunction

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2.0%-∆ Silica-Based Compact and Low Loss Array Waveguide Grating

SSRN

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SSRN 2023年

作者： Wang, Liangliang Zhang, Jiashun An, Junming Sun, Bingli Chen, Jun Gao, Zhihao Yin, Xiaojie Wang, Yue Wu, Yuan Da State Key Laboratory on Integrated Optoelectronics Institute of Semiconductors Chinese Academy of Sciences Beijing100083 China Henan Key Laboratory of Optoelectronic Circuit and Integration Henan Shi Jia Photons Technology Co. Ltd Hebi458030 China

In this paper, a new 2.0% refractive index difference silica-based platform is developed. key processes such as etching and up cladding are optimized to achieve low transmission loss of 0.043dB/cm. The periodic segment waveguides are used to obtain low coupling loss of 0.6dB/point. Based on this platform, a compact low loss C band 48-channel 100GHz spacing array waveguide grating is designed and fabricated. The size by arc cutting is 21.8×8.4mm2. The on-chip loss is less than 3.2dB, the uniformity of 48-channel is less than 0.33dB. The polarization dependence loss is less than 0.2dB. The bandwidths of 0.5dB, 1dB, and 3dB are greater than 0.33nm, 0.43nm, and 0.63nm, respectively. The adjacent and non-adjacent crosstalk are less than -26.16dB and -37.62dB. © 2023, The Authors. All rights reserved.

关键词： Silica

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Design and Fabrication of E-Band Silica Based Dense Wavelength-Division Multiplexing (Dwdm) Awg

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SSRN 2024年

作者： Han, Feng Zhang, Jiashun Wang, Liangliang Cui, Pengwei Wang, Yue An, Junming Chen, Jun Sun, Bingli Zhou, Tianhong Jining Normal University School of Physics and Electronic Information Engineering Wulanchabu 012000 China Key Laboratory of Optoelectronic Materials and Devices Institute of Semiconductors Chinese Academy of Sciences Beijing100083 China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing100049 China College of Materials Science and Opto-Electronic Technology University of Chinese Academy of Sciences Beijing100049 China Key Laboratory of Optoelectronic Circuit and Integration Henan Shijia Photons Technology Co. Ltd. Henan Hebi458030 China

A E-band，48 channels flat top silica based dense wavelength-division multiplexing (DWDM) arrayed waveguide grating (AWG) was designed and fabricated with 0.75% relative refractive index difference. In order to reduce the center wavelength drift caused by the refractive index of silica material changing with external environmental temperature, the AWG chip was athermal packaged, and the center wavelength drift was reduced from 8.2 pm/° C to 0.643 pm/° C. The transmission spectra were measured, which the results shows that optical performance is uniform. The tested 53.12 Gbps PAM-4 high-speed transmission eye signals are clearly visible, extinction ratio is more than 2.7 dB. © 2024, The Authors. All rights reserved.

关键词： Dense wavelength division multiplexing

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Superior Performance of ZnGaO Solar-Blind Photodetectors by Implementing TFT Structure and Tunable ZNO Cycle Ratio

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SSRN 2024年

作者： Fan, Hui-Chen Wang, Chen Xu, Yi-Hong Fan, Teng-Min Huang, Pao-Hsun Ruan, Yu-Jiao Wu, Tingzhu Kuo, Hao-Chung Wuu, Dong-Sing Lai, Feng-Min Lien, Shui-Yang Xiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology School of Opto-Electronic and Communication Engineering Xiamen University of Technology Xiamen361024 China School of Ocean Information Engineering Jimei University Jimei District Fujian Xiamen361021 China National Measurement and Testing Center for Flat Panel Display Industry Xiamen Institute of Measurement and Testing Xiamen361024 China National Integrated Circuit Industry and Education Integration Innovation Platform Department of Electronic Science Xiamen University Xiamen361005 China Department of Photonics Graduate Institute of Electro-Optical Engineering College of Electrical and Computer Engineering National Yang Ming Chiao Tung University Hsinchu30010 Taiwan Department of Applied Materials and Optoelectronic Engineering National Chi Nan University Nantou54561 Taiwan Department of Biomedical Engineering Da-Yeh University Changhua51591 Taiwan

In this study, plasma enhanced atomic layer deposition was used to prepare ZnGaO thin films with different ZnO cycle ratios from 0% to 50%, which were employed to fabricate the MSM-type and TFT-type solar-blind photodetector. The properties of the films and the performance of the solar blind photodetector are greatly affected by the ZnO cycle ratio. Appropriate Zn doping content decreases the ratio of oxygen vacancies and Zn interstitials in Ga2O3, while excessive Zn doping degrades the quality of the film. Compared to MSM-type photodetector, an obviously improved performance of ZnGaO TFT-type photodetector has been observed due to its self-amplified photocurrent and the reduced dark current controlled by gate voltage. At a ZnO cycle ratio of 40%, a superior performance of TFT-type solar-blind photodetector with an ultra-low dark current ~4.5×10-13 A, an excellent light switching ratio ~2.2×107, and an outstandingly high sensitivity ~34.31 A/W has been obtained. These results demonstrate that the incorporation of Zn dopants can effectively modulate the performance of Ga2O3 TFT-type photodetector providing a great perspective for cost-effective and high-performance solar-blind PDs. © 2024, The Authors. All rights reserved.

关键词： Zinc oxide

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Superior performance of ZnGaO solar-blind photodetectors by Implementing TFT structure and tunable ZnO cycle ratio

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Materials Today Chemistry 2024年 38卷

作者： Fan, Hui-Chen Wang, Chen Xu, Yi-Hong Fan, Teng-Min Huang, Pao-Hsun Ruan, Yu-Jiao Wu, Ting-Zhu Kuo, Hao-Chung Wuu, Dong-Sing Lai, Feng-Min Lien, Shui-Yang Xiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology School of Opto-Electronic and Communication Engineering Xiamen University of Technology Xiamen 361024 China School of Ocean Information Engineering Jimei University Jimei District Xiamen 361021 Fujian China National Measurement and Testing Center for Flat Panel Display Industry Xiamen Institute of Measurement and Testing Xiamen 361024 China National Integrated Circuit Industry and Education Integration Innovation Platform Department of Electronic Science Xiamen University Xiamen 361005 China Department of Photonics & Graduate Institute of Electro-Optical Engineering College of Electrical and Computer Engineering National Yang Ming Chiao Tung University Hsinchu 30010 Taiwan Department of Applied Materials and Optoelectronic Engineering National Chi Nan University Nantou 54561 Taiwan Department of Biomedical Engineering Da-Yeh University Changhua 51591 Taiwan

In this study, plasma enhanced atomic layer deposition was used to prepare ZnGaO thin films with different ZnO cycle ratios from 0 % to 50 %, which were employed to fabricate the MSM-type and TFT-type solar-blind photodetector. The properties of the films and the performance of the solar blind photodetector are greatly affected by the ZnO cycle ratio. Appropriate Zn doping content decreases the ratio of oxygen vacancies and Zn interstitials in Ga₂O₃, while excessive Zn doping degrades the quality of the film. Compared to MSM-type photodetector, an obviously improved performance of ZnGaO TFT-type photodetector has been observed due to its self-amplified photocurrent and the reduced dark current controlled by gate voltage. At a ZnO cycle ratio of 40 %, a superior performance of TFT-type solar-blind photodetector with an ultra-low dark current ∼4.5 × 10⁻¹³ A, an excellent light switching ratio ∼2.2 × 10⁷, and an outstandingly high sensitivity ∼34.31 A/W has been obtained. These results demonstrate that the incorporation of Zn dopants can effectively modulate the performance of Ga₂O₃ TFT-type photodetector providing a great perspective for cost-effective and high-performance solar-blind PDs. © 2024 Elsevier Ltd

关键词： High performance Plasma enhanced atomic layer deposition TFT-Type solar-blind photodetector ZnGaO film ZnO cycle ratio

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