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Multi-scale mechanical properties of bulk-heterojunction films in polymer solar cells

npj Flexible Electronics 2023年第1期7卷 545-554页

作者： Tian Zhong Feng Guo Shiyun Lei Biao Xiao Qingduan Li Tao Jia Xunchang Wang Renqiang Yang Key Laboratory of Optoelectronic Chemical Materials and Devices(Ministry of Education) Flexible Display Materials and Technology Co‒Innovation Centre of Hubei ProvinceSchool of Optoelectronic Materials&TechnologyJianghan UniversityWuhan 430056China School of Chemistry Guangzhou Key Laboratory of Materials for Energy Conversion and StorageGuangdong Provincial Engineering Technology Research Center for Materials for Energy Conversion and StorageSouth China Normal UniversityGuangzhou 510006China School of Optoelectronic Engineering Guangdong Polytechnic Normal UniversityGuangzhou 510665China State Key Laboratory of Luminescent Materials and Devices South China University of TechnologyGuangzhou 510640China

The mechanical properties of bulk-heterojunction(BHJ)films play critical roles in the operational stability of flexible polymer solar cells(PSCs).In this study,the multi-scale mechanical properties of the BHJ films containing three representative electron acceptors are systematically ***,the tensile moduli of the films based on PC_(71)BM,Y6,and PRi-C39 decrease sequentially,and their fracture strain and toughness show an increasing ***,the nanoindentation moduli of the films based on these acceptors vary in accordance with the results of tensile *** analyses illustrate that the occurrence of creep deformation in the PC_(71)BM,Y6,and PRi-C39-based films decrease *** angle tests demonstrate that the donor-acceptor interactions greatly affect the mechanical properties of these *** results above demonstrate the effects of acceptor type on the multi-scale mechanical properties of the BHJ films,which are important for the development of reliable flexible PSCs.

关键词： creep toughness deformation

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Doublecarbohelicene:facile synthesis,chiroptical properties,isomerization study,and lasing application

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Science China Chemistry 2025年第1期68卷 233-240页

作者： Peipei Liu Yantong Li Meng-Xiang Wu Hao Kang Xiao-Li Zhao Lin Xu Linlin Liu Xiaodong Li Junfeng Fang Zhiwei Fang Ya Cheng Hai-Bo Yang Huakang Yu Xueliang Shi State Key Laboratory of Petroleum Molecular&Process Engineering Shanghai Key Laboratory of Green Chemistry and Chemical ProcessesSchool of Chemistry and Molecular EngineeringEast China Normal UniversityShanghai 200062China School of Physics and Optoelectronics South China University of TechnologyGuangzhou 510640China School of Physics and Electronic Science Engineering Research Center of Nanophotonics&Advanced InstrumentMinistry of EducationEast China Normal UniversityShanghai 200241China State Key Laboratory of Precision Spectroscopy School of Physics and Electronic ScienceEast China Normal UniversityShanghai 200241China Institute of Polymer Optoelectronic Materials&Devices State Key Laboratory of Luminescent Materials&DevicesSouth China University of TechnologyGuangzhou 510640China

Double carbohelicenes have attracted considerable attention due to their aesthetic structures,distinctπ-conjugation extension,inherent chirality,and intriguing optical and electronic ***,the concise de novo synthesis of a new double[5]carbohelicene 1 together with its chiroptical properties,isomerization process and lasing application is presented.1 was synthesized by a simple protocol involving the formation of a 6,6′-bipentacene as the key *** is worth noting that1 existed as two diastereomers 1-PP/MM and 1-PM,which were successfully isolated and unambiguously confirmed by Xray *** optical resolution of the racemic 1-PP/MM was successfully achieved by chiral-phase highperformance liquid chromatography(HPLC),and 1-PP and 1-MM were characterized by circular ***,it was found that 1-PP/MM could be completely isomerized to 1-PM upon heating,and the detailed thermodynamics and kinetics of the isomerization process were systematically investigated.1-PM exhibited deep-red luminescence with emission maximum at 723 nm and fluorescence quantum yield as high as 32.95%.Consequently,we can showcase the lasing application of 1-PM by doping with epoxy resin to assemble a bottle microlaser spontaneously,which the lasing wavelength is 796.6 nm at a threshold of 0.8 m J cm^(-2).We believe that our studies,including the facile synthesis methodology,detailed isomerization studies,and lasing application,will shed some light on the design and synthesis of novel carbohelical systems with more functions.

关键词： double carbohelicene optical resolution organic laser isomerization X-ray diffraction

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Revealing the atomic mechanism of diamond–iron interfacial reaction

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Carbon Energy 2024年第3期6卷 255-263页

作者： Yalun Ku Kun Xu Longbin Yan Kuikui Zhang Dongsheng Song Xing Li Shunfang Li Shaobo Cheng Chongxin Shan Henan Key Laboratory of Diamond Optoelectronic Materials and Devices Key Laboratory of Material PhysicsMinistry of EducationSchool of Physics and MicroelectronicsZhengzhou UniversityZhengzhouChina Department of Mechanical Engineering Stanford UniversityStanfordCaliforniaUSA Information Materials and Intelligent Sensing Laboratory of Anhui Province Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of EducationInstitutes of Physical Science and Information TechnologyAnhui UniversityHefeiChina Institute of Quantum Materials and Physics Henan Academy of SciencesZhengzhouChina

Diamond,with ultrahigh hardness,high wear resistance,high thermal conductivity,and so forth,has attracted worldwide ***,researchers found emergent reactions at the interfaces between diamond and ferrous materials,which significantly affects the performance of diamond-based ***,combing experiments and theoretical calculations,taking diamond–iron(Fe)interface as a prototype,the counter-diffusion mechanism of Fe/carbon atoms has been ***,it is identified that Fe and diamond first form a coherent interface,and then Fe atoms diffuse into diamond and prefer the carbon vacancies ***,the relaxed carbon atoms diffuse into the Fe lattice,forming Fe_(3)***,graphite is observed at the Fe_(3)C surface when Fe_(3)C is over-saturated by carbon *** present findings are expected to offer new insights into the atomic mechanism for diamondferrous material's interfacial reactions,benefiting diamond-based device applications.

关键词： coherent interface counter-diffusion diamond iron phase transition

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Efficient emission of quasi-two-dimensional perovskite films cast by inkjet printing for pixel-defined matrix light-emitting diodes

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Materials Futures 2022年第4期1卷 165-172页

作者： Junjie Wang Danyang Li Jian Wang Junbiao Peng Institute of Polymer Optoelectronic Materials and Devices State Key Laboratory of Luminescent Materials and DevicesSouth China University of TechnologyGuangzhou 510640People’s Republic of China

Quasi-two-dimensional(quasi-2D)perovskites are promising materials for potential application in light-emitting diodes(LEDs)due to their high exciton binding energy and efficient ***,their luminescent performance is limited by the low-n phases that act as quenching luminescence ***,a novel strategy for eliminating low-n phases is proposed based on the doping of strontium bromide(SrBr_(2))in perovskites,in which SrBr_(2)is able to manipulate the growth of quasi-2D perovskites during their *** was reasonably inferred that SrBr_(2)readily dissociated strontium ions(Sr^(2+))in dimethyl sulfoxide solvent,and Sr^(2+)was preferentially adsorbed around[PbBr_(6)]^(4−)through strong electrostatic interaction between them,leading to a controllable growth of quasi-2D perovskites by appropriately increasing the formation energy of *** has been experimentally proved that the growth can almost completely eliminate low-n phases of quasi-2D perovskite films,which exhibited remarkably enhanced photoluminescence.A high electroluminescent efficiency matrix green quasi-2D perovskite-LED(PeLED)with a pixel density of 120 pixels per inch fabricated by inkjet printing technique was achieved,exhibiting a peak external quantum efficiency of 13.9%,which is the most efficient matrix green quasi-2D PeLED so far to our knowledge.

关键词： quasi-2D perovskite inkjet printing SrBr2 doping phase distribution pixel-defined matrix LEDs

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Investigation of edge states variation in valley photonic crystals by modulating the refractive index of domain walls

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optoelectronics Letters 2025年第3期21卷 160-166页

作者： ZHANG Run ZHONG Xingli LIN Zhongxi QIU Weibin SU Hui Key Laboratory of Optoelectronic Materials Chemistry and Physics Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient DevicesFujian Institute of Research on the Structure of MatterChinese Academy of ScienceFuzhou350002China University of Chinese Academy of Sciences Chinese Academy of SciencesBeijing100039China College of Information Science and Engineering Huaqiao UniversityXiamen361021China Fujian Science&Technology Innovation Laboratory for Optoelectronic Information of China Fuzhou350108China

Realizing the valley Hall effect by breaking the spatial inversion symmetry of photonic systems has become a cutting-edge field of micro-nano-optics,since the valley degree of freedom was introduced into photonic *** novel devices based on the domain walls of the valley photonic crystals have also been *** this article,we investigate the variation of edge states by the modulation of refractive index within the domain walls,and the geometric difference between the dielectric columns of the *** photonic crystal waveguides with three types of domain walls(bearded,zigzag,armchair)are *** results show that the creation of a double-edge state in the band diagram results in two windows of stable transmission in tunable *** findings might have significant implications in the field of novel optical devices.

关键词： modulation refractive index domain walls variation edge states breaking spatial inversion symmetry valley degree freedom photonic crystals geometric difference dielectric columns photonic systems

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System for detecting adhesive overflow in sensor chips based on improved Unet

System for detecting adhesive overflow in sensor chips based...

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2023 International Conference on optoelectronic Materials and devices, ICOMD 2023

作者： Chen, Lei Long, Zourong Tang, Bin Zhao, Mingfu Leisi, Yue He, Yulong Wei, Fuping Intelligent Fiber Optic Sensing Technology Chongqing University China Engineering Research Center Chongqing Key Laboratory of Fiber Optic Sensing and Optoelectronic Detection Chongqing University of Technology Chongqing400054 China

ISBN: (纸本)9781510674509

With the rapid development of information technology, traditional neural networks used as feature extraction networks can improve the network’s fitting ability but may lose information for small object detection, resulting in low accuracy. In this paper, the image acquisition device and Unet detection model were built independently. The algorithm accurately detects the sensor chip overflow using image processing techniques with OpenCV. Finally, the detected images are presented using *** results show that the improved Unet-glue algorithm achieves better segmentation accuracy for chip overflow. It also demonstrates strong robustness and practicality in the field of small object defect detection. © 2024 SPIE. All rights reserved.

关键词： Adhesives

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Efficient red perovskite quantum dot light-emitting diode fabricated by inkjet printing

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Materials Futures 2022年第1期1卷 135-141页

作者： Danyang Li Junjie Wang Miaozi Li Biao Guo Lan Mu Yu Luo Yi Xiao Chaohuang Mai Jian Wang Junbiao Peng Institute of Polymer Optoelectronic Materials and Devices State Key Laboratory of Luminescent Materials and DevicesSouth China University of TechnologyGuangzhou 510640People’s Republic of China

Perovskite quantum dots(PeQDs)are considered potential display materials due to their high color purity,high photoluminescence quantum yield(PLQY),low cost and easy film *** this work,a novel electroluminescence(EL)device consisting of the interface layer of long alkyl-based oleylammonium bromide(OAmBr),which passivates the surface defects of PeQDs and adjusts the carrier transport properties,was *** PLQY of the OAmBr/PeQD bilayer was significantly improved.A high-performance EL device with the structure of indium tin oxide/poly(3,4-ethylenedioxythiophene)polystyrene sulfonate/poly(bis(4-phenyl)(2,4,6-trimethylphenyl)amine)/OAmBr/PeQDs/2,2′,2′′-(1,3,5-benzinetriyl)-tris(1-phenyl-1H benzimidazole)/LiF/Al was constructed using a spin-coating method.A peak external quantum efficiency(EQE)of 16.5%at the emission wavelength of 646 nm was ***,an efficient matrix EL device was fabricated using an inkjet printing method.A high-quality PeQD matrix film was obtained by introducing small amounts of polybutene into the PeQDs to improve the printing *** EQE reached 9.6%for the matrix device with 120 pixels per inch and the same device structure as that of the spin-coating one.

关键词： perovskite quantum dot light-emitting diode inkjet print

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Unlocking enhanced photo-Fenton,night-Fenton,and photocatalytic activities of dual Z-scheme MoS_(2)/WO_(3-x)/Ag_(2)S core-shell structure via defect engineering

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Journal of Materials Science & technology 2024年第30期197卷 160-170页

作者： Muhammad Abbas Kashif Hussain Navid Hussain Shah Mubashar Ilyas Rabia Batool M.Ashfaq Ahmad Yanyan Cui Yaling Wang Beijing Engineering Research Center of Mixed Reality and Advanced Display School of Optics and PhotonicsBeijing Institute of TechnologyBeijing 100081China THz Technical Research Center Shenzhen Key Laboratory of Micro-Nano Photonic Information TechnologyKey Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong ProvinceCollege of Physics and Optoelectronic EngineeringShenzhen UniversityTHz Technical Research Center of Shenzhen UniversityShenzhen 518060China Key Laboratory of Clusters Science of Ministry of Education School of Chemistry Beijing Institute of TechnologyBeijing 100081China Department of Physics University of LahoreLahorePakistan CAS Key Laboratory for Biomedical Effects of Nanomaterials and Nanosafety National Center for Nanoscience and Technology of ChinaBeijing 100190China Department of Physics COMSATS University IslamabadLahore CampusLahorePakistan

Memory catalysis and conventional Fenton reactions are intended to counteract prevailing energy and environmental crises;however,poor performance and the need for UV irradiation question their ***,we demonstrate defect-engineered,dual Z-scheme MoS_(2)/WO_(3-x)/Ag_(2)S exhibiting enhanced photo-Fenton(PFR),night-Fenton(NFR),and photocatalytic activities(PR)against tetracycline(TC)and Rhodamine B(RhB).Defects enable the catalyst to store ample electrons just like metals,which play a vi-tal role by exciting H2 O2 during Fenton *** removed 91.54%,76.43%,and 83.39%TC(40 mg L^(-1))in 100 min and registered degradation rate constants of 0.05379,0.02858,and 0.04133 min^(-1)against RhB(20 mg L^(-1))during PFR,NFR,and PR *** total organic carbon(TOC)removal rates reached 58.56%and 60.88%during TC and RhB degradations in PFR,*** and Liquid EPR analy-sis shows it can excite H_(2)O_(2)to carry Fenton reactions with and without *** demonstrates wide pH adaptability and tremendous potential to simultaneously counter energy and environmental crises.

关键词： Fenton reaction Photolysis Core-shell Dual Z-scheme TC WO_(3-x)

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Graphene binding on black phosphorus enables high on/off ratios and mobility

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National Science Review 2024年第2期11卷 188-195页

作者： Fanrong Lin Zhonghan Cao Feiping Xiao Jiawei Liu Jiabin Qiao Minmin Xue Zhili Hu Ying Liu Huan Lu Zhuhua Zhang Jens Martin Qingjun Tong Wanlin Guo Yanpeng Liu Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education State Key Laboratory of Mechanics and Control of Mechanical Structures and Institute for Frontier Science Nanjing University of Aeronautics and Astronautics Centre for Advanced 2D Materials National University of Singapore School of Physics and Electronics Hunan University Centre for Quantum Physics Key Laboratory of Advanced Optoelectronic Quantum Architecture and MeasurementSchool of PhysicsBeijing Institute of Technology Leibniz Institute für Kristallzüchtung

Graphene is one of the most promising candidates for integrated circuits due to its robustness against short-channel effects, inherent high carrier mobility and desired gapless nature for Ohmic contact, but it is difficult to achieve satisfactory on/off ratios even at the expense of its carrier mobility, limiting its device applications. Here, we present a strategy to realize high back-gate switching ratios in a graphene monolayer with well-maintained high mobility by forming a vertical heterostructure with a black phosphorus multi-layer. By local current annealing, strain is introduced within an established area of the graphene, which forms a reflective interface with the rest of the strain-free area and thus generates a robust off-state via local current depletion. Applying a positive back-gate voltage to the heterostructure can keep the black phosphorus insulating, while a negative back-gate voltage changes the black phosphorus to be conductive because of hole accumulation. Then, a parallel channel is activated within the strain-free graphene area by edge-contacted electrodes, thereby largely inheriting the intrinsic carrier mobility of graphene in the on-state. As a result, the device can provide an on/off voltage ratio of >10～3 as well as a mobility of ～8000 cm2V-1s-1at room temperature, meeting the low-power criterion suggested by the International Roadmap for devices and Systems.

关键词： graphene on/off ratio mobility black phosphorus reflective interface

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Tunable afterglow Ca1− xSrxAl2O4:Eu2+, Nd3+ phosphors with dependence of an excitation wavelength

Tunable afterglow Ca1− xSrxAl2O4:Eu2+, Nd3+ phosphors with ...

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作者： Li, Lulu Li, Panpan Wu, Yixi Li, Jing Zhang, Xinlian Xu, Shiqing Zhang, Junjie Institute of Optoelectronic Materials and Devices College of Optical and Electronic Technology China Jiliang University Hangzhou310018 China State Key Laboratory of Luminescent Materials and Devices South China University of Technology Guangzhou510641 China

In the emerging field of high-capacity information encryption, multicolor, multitemporal, and multimodal luminescence inorganic materials are of great significance. However, conventional inorganic materials lack the flexibility to dynamically adjust the photon transition path, resulting in unicolor luminescence of the sample and reducing the reading and decoding levels. Herein, we elaborately designed the components for constructing dual-phase crystal fields for Eu2+ in phosphors based on a high temperature solid-state method. Specifically, SrAl2O4:Eu2+ crystal with a bright green afterglow and CaAl2O4:Eu2+ crystal with a blue afterglow were obtained in phosphors at the same time. As a result, a tunable afterglow behavior from blue to white was achieved due to the 4f65d1 → 4f7 transition of Eu2+ at different crystal field sites. Finally, the color tunable afterglow sample was used to explore the encryption and decryption processes of information, and the results showed that the prepared material has a good anti-counterfeiting performance, which is promising for the development of long persistent luminescent materials. © 2024 Optica Publishing Group.

关键词： Phosphors

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