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Topological materials for full-vector elastic waves

National Science Review 2023年第5期10卷 194-200页

作者： Ying Wu Jiuyang Lu Xueqin Huang Yating Yang Li Luo Linyun Yang Feng Li Weiyin Deng Zhengyou Liu School of Physics and Optoelectronics and State Key Laboratory of Luminescent Materials and Devices South China University of Technology Institute of Solid Mechanics Midea Corporate Research CenterMidea Group Department of Astronautic Science and Mechanics Harbin Institute of Technology Centre for Quantum Physics Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE)School of PhysicsBeijing Institute of Technology Key Laboratory of Artificial Micro-and Nanostructures of Ministry of Education and School of Physics and Technology Wuhan University Institute for Advanced Studies Wuhan University

Elastic wave manipulation is important in a wide variety of applications,including information processing in small elastic devices and noise control in large solid *** recent emergence of topological materials has opened new avenues for modulating elastic waves in ***,because of the full-vector feature and the complicated couplings of the longitudinal and transverse components of elastic waves,manipulating elastic waves is generally difficult compared with manipulating acoustic waves(scalar waves) and electromagnetic waves(vectorial waves but transverse only).To date,topological materials,including insulators and semimetals,have been used for acoustic and electromagnetic *** topological materials with elastic waves have also been reported,the observed topological edge modes lie on the domain wall.A natural question arises:Is there an elastic metamaterial with topological edge modes on its own boundary?Here,we report a 3D metal-printed bilayer metamaterial that topologically insulates elastic *** introducing chiral interlayer couplings,the spin-orbit couplings for elastic waves are induced,which give rise to nontrivial topological *** edge states with vortex features were demonstrated on the boundary of the single topological *** further show a heterostructure of the metamaterial that exhibits tunable edge *** findings could be used in devices based on elastic waves in solids.

关键词： topological insulators elastic waves edge states

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Bone-inspired(GNEC/HAPAAm)hydrogel with fatigue-resistance for use in underwater robots and highly piezoresistive sensors

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Microsystems & Nanoengineering 2023年第4期9卷 57-67页

作者： Chaoyang Lyu Bo Wen Yangzhen Bai Daning Luo Xin Wang Qingfeng Zhang Chenyang Xing Tiantian Kong Dongfeng Diao Xi Zhang Institute of Nanosurface Science and Engineering Guangdong Provincial Key Laboratory of Micro/Nano Optomechatronics EngineeringShenzhen University518060 ShenzhenChina Research Center of Medical Plasma Technology Shenzhen University518060 ShenzhenChina Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education College of Physics and Optoelectronic EngineeringShenzhen University518060 ShenzhenChina Department of Biomedical Engineering School of MedicineShenzhen University518000 ShenzhenChina

A novel bone-inspired fatigue-resistant hydrogel with excellent mechanical and piezoresistive properties was developed,and it exhibited great potential as a load and strain sensor for underwater robotics and daily *** hydrogel was created by using the high edge density and aspect ratio of graphene nanosheet-embedded carbon(GNEC)nanomaterials to form a three-dimensional conductive network and prevent the expansion of microcracks in the hydrogel *** progressive enhancement of the organic hydrogels(micrometer scale)was realized with inorganic graphene nanosheets(nanometer scale).The graphene nanocrystals inside the GNEC film exhibited good electron transport properties,and the increased distances between the graphene nanocrystals inside the GNEC film caused by external forces increased the resistance,so the hydrogel was highly sensitive and suitable for connection to a loop for sensing *** hydrogels obtained in this work exhibited excellent mechanical properties,such as tensile properties(strain up to 1685%)and strengths(stresses up to 171 kPa),that make them suitable for use as elastic retraction devices in robotics and provide high sensitivities(150 ms)for daily human monitoring.

关键词： fatigue resistance underwater

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Constructing lithiophilic sites-rich artificial solid electrolyte interphase to enable dendrite-free and corrosion-free lithium-sulfur batteries

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Green Energy & Environment 2024年第12期9卷 1891-1900页

作者： Wei Lu Anshun Zhao Qiuxu Chen Sihan Liu Mingxi Yu Zihao Wang Ze Gao Xue Zhao Guiru Sun Ming Feng Key Laboratory of Functional Materials Physics and Chemistry Ministry of Education Jilin Normal UniversityChangchunJilin130103China College of Information Technology Jilin Engineering Research Center of Optoelectronic Materials and DevicesJilin Normal UniversitySipingJilin136000China School of Science Changchun University of Science and TechnologyChangchunJilin130022China

An artificial solid electrolyte interphase(SEI)with lithiophilic sites and chemical bonds anchoring lithium polysulfides(LiPSs)has been developed as a potential solution to protect the lithium(Li)metal anode of Lithium-sulfur(Li-S)*** strategy aims to guide consistent Li deposition and relieve lithium ***,the evolution process of lithiophilic sites based on aluminum fluoride(AlF_(3))in an artificial SEI is disclosed in Li-S batteries with metal-based lithiophilic *** polyester polymer(PMMA and PPC)/AlF_(3) artificial SEI(MPAF-SEI)was homogeneously anchored on Li anode by in-situ *** conversion of AlF_(3) into Li-Al and LiF lithiophilic sites effectively reduce the Li nucleation overpotential and prevents the formation of Li *** the same time,the polymer can anchor LiPSs by chemical bonds and prevents Li *** optimized MPAF-SEI protected Li demonstrates excellent stability for over 3000 h at a capacity of 1 mAh cm^(-2) in Li||Li symmetric *** Li-S battery with low N/P(4)exhibits a capacity of 532.6 mAh g^(-1) over 300 cycles lifespan at 0.5 C.

关键词： Li anode SEI Lithiophilic sites Li-S battery AlF_(3)

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Thickness Dependence of Doping Level in Conducting Polymer Films:the Optical Contrast Optimization in Electrochromism as a Case Study

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Chinese Journal of Chemistry 2022年第5期40卷 597-602页

作者： Jianqiao Wang Huanhuan Zhang Yuguang Ma State Key Laboratory of Luminescent Materials and Devices Institute of Polymer Optoelectronic Materials and DevicesSouth China University of TechnologyNo.381 Wushan RoadTianhe DistinctGuangzhouGuangdong510640 China

Doping plays an essential role in the properties of conducting *** thickness not only has a direct influence on their photoelectric properties,but also affects the doping ability,which may lead to the decline of capacitance and electrochromic properties caused by incomplete ***,it is essential to study the quantitative relationship between doping level and film thickness in ***,empirical formula between doping level and thickness was obtained by studying the spectroelectrochemistry behaviors of two different electrochromic materials,poly(N,N'-bis(3,5-(2-thienyl)-phenyl)-1,6,7,12-tetrachloroperylene-3,4,9,10-perylenetetracarboxylic diimide)(poly(Th-Cl-PBI))and poly(3,4-ethylenedioxythiophene)(PEDOT).The doping level is verified to be correlated to the reciprocal of the 3^(rd)power of film *** results fit these formulas very well,giving correlation coefficient R^(2)higher than *** optical contrast prediction of these two electrochromic materials is also used to verify this relationship *** the first time,we quantitatively connect these two important parameters of conducting polymers,doping level and thickness.

关键词： Doping Electrochemistry Polymers Electrochromism Thickness dependence

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Study on broadband supercontinuum generation by highly GeO2 doped fibers 19

Study on broadband supercontinuum generation by highly GeO2 ...

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19th National Conference on Laser technology and optoelectronics

作者： Ma, Shuanglong Luo, Xing Wang, Jiachen Dong, Fanlong Wang, Jingzhang Yan, Peiguang Guo, Chunyu Ruan, Shuangchen Shenzhen Key Laboratory of Laser Engineering Guangdong Provincial Key Laboratory of Micro/Nano opt mechatronics Engineering Key Laboratory of Optoelectronic Devices and Systems Ministry of Education and Guangdong Province College of Physics and Optoelectronic Engineering Shenzhen University Shenzhen518060 China Key Laboratory of Advanced Optical Precision Manufacturing Technology Guangdong Higher Education Institutes Shenzhen Technology University Shenzhen518118 China

ISBN: (纸本)9781510683228

Broadband supercontinuum generation in highly GeO2 doped fibers holds significant appeal for researchers due to their distinct advantages. In this study, we propose employing a low repetition rate noise-like pulse mode-locked fiber laser as the pulse seed for mid-infrared supercontinuum generation in such fibers. Utilizing only one amplifier stage to amplify the noise-like pulse, we achieved a broadband supercontinuum with a 20 dB bandwidth spanning from approximately 652 nm to 3350 nm in a highly GeO2 doped fiber with a core GeO2 concentration of 98%, even with an output power as low as 297 mW. To the best of our knowledge, this represents the widest supercontinuum achieved in highly GeO2 doped fibers to date. Additionally, we observed that further increases in pump power resulted in damage to the core of the highly GeO2 doped fibers. This posed a challenge in expanding the spectral range of the output supercontinuum by simply increasing the peak pulse power. This conclusion is of significant reference value for research on supercontinuum generation based on highly GeO2 doped fibers. © 2024 SPIE.

关键词： Pulse repetition rate

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Phase transition and electrical conversion properties of Ge/Sb nano-multilayer films on flexible substrates

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npj Flexible Electronics 2024年第1期8卷 891-899页

作者： Cheng Wang Yifeng Hu Li Li School of Mathematics and Physics Jiangsu University of TechnologyChangzhou 213000China Jincheng Research Institute of Opo-mechatronics Jincheng 48000 JinchengChina Shanxi Key Laboratory of Advanced Semiconductor Optoelectronic Devices and Integrated Systems Jincheng 48000China

Flexible information memory is the key component of flexible electronic devices and the core of intelligent wearable *** this paper,Ge/Sb multilayer phase change films of various thickness ratios were prepared using polyether ether ketone as substrate,and their flexible phase change properties and device conversion characteristics were *** bending for 100000 times and bending experiments with different bending radius,the film can still realize the transition from amorphous to crystalline states,and the resistance fluctuation was ***,stretching and pressing of the film resulted in grain refinement and increasing of crystalline *** flexible electronic devices using Ge/Sb multilayer films were *** phase change memory device can realize reversible conversion between SET and RESET states with different pulse widths in flat,bent states and after bending many *** findings show that Ge/Sb multilayer films on PEEK substrate have broad application prospects in high-performance flexible memory in the future.

关键词： multilayer bending transition

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Switchable different pulse state in 2.8 μm femtosecond mode locked fluoride fiber laser 19

Switchable different pulse state in 2.8 μm femtosecond mode...

引用

19th National Conference on Laser technology and optoelectronics

作者： Chen, Zifeng Yang, Ying Ma, Shuanglong Luo, Xing Yan, Peiguang Wang, Jinzhang Guo, Chunyu Ruan, Shuangchen Shenzhen Key Laboratory of Laser Engineering Guangdong Provincial Key Laboratory of Micro/Nano opt mechatronics Engineering Key Laboratory of Optoelectronic Devices and Systems Ministry of Education and Guangdong Province College of Physics and Optoelectronic Engineering Shenzhen University Shenzhen518060 China Key Laboratory of Advanced Optical Precision Manufacturing Technology Guangdong Higher Education Institutes Shenzhen Technology University Shenzhen518118 China

ISBN: (纸本)9781510683228

We experimentally demonstrate, for the first time, a 2.8 μm femtosecond mode-locked fluoride fiber laser (MLFFL) with switchable pulsed-state including monopulse, dipulse, harmonic mode-locking and soliton molecules. Specifically, through adjustments to the cavity parameters, the mode-locking operation from monopulse to dipulse within a specific pump power range can be realized, with the maximum output power of 165 mW and 175 mW, repectively. Further increasing the pump power, the operating regime of the oscillator switches to second-order harmonic mode-locking, where the pulse fundamental repetition rate is ~155 MHz with the output power of 330 mW. In this case, bound soliton molecule can also be acquired by appropriately optimizing the orientation of the waveplates while keeping the pump power fixed. In particular, with increased pump power, multiple states of bound soliton molecule pairs can be achieved as well. The laser system is simple in structure, self-starting and good stability. Our experimental results may provide solutions for practical applications which requiring different pulse state switchable. © 2024 SPIE.

关键词： Pulse repetition rate

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Modulation of Electron Transport Layers To Minimize Voltage Loss in CsSnI₃ Perovskite Solar Cells

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ACS Energy Letters 2025年第6期10卷 2889-2897页

作者： Yu, Haixuan Fu, Lijuan Sun, Tianyu Wang, Deyu Liu, Zhirong Huang, Junyi Zhang, Zhiguo Ma, Xiaoting Li, Xiongjie Hu, Bing Chen, Muqing Yang, Shangfeng Shen, Yan Wang, Mingkui Wuhan National Laboratory for Optoelectronics School of Optoelectronic Science and Engineering Huazhong University of Science and Technology 1037 Luoyu Road Hubei Wuhan 430074 China Key Laboratory of Optoelectronic Chemical Materials and Devices Ministry of Education School of Optoelectronic Materials & Technology Jianghan University Hubei Wuhan 430056 China Key Laboratory of Precision and Intelligent Chemistry Collaborative Innovation Center of Chemistry for Energy Materials (iChEM) Department of Materials Science and Engineering University of Science and Technology of China Hefei 230026 China Optics Valley Laboratory Hubei Wuhan 430074 China

The efficiency of tin-based perovskite solar cells, particularly the inorganic CsSnI3, remains far below that of lead-based counterparts due to the substantial voltage loss at the charge transport layer-perovskite int... 详细信息

The efficiency of tin-based perovskite solar cells, particularly the inorganic CsSnI₃, remains far below that of lead-based counterparts due to the substantial voltage loss at the charge transport layer-perovskite interface. Systematic research shows that the voltage loss in the CsSnI₃ perovskite planar solar cells is mainly due to the reduction in the splitting of the quasi-Fermi energy level and the increase in the energy band bending at the electron transport layer (ETL)-perovskite interface. In this study, we propose the fullerene derivative tetramethylcyclobutadiene-C₆₀ (TMCB), which has the high lowest unoccupied molecular orbital energy level, as an ETL for CsSnI₃ perovskite planar solar cells to minimize voltage losses. The TMCB ETL has been demonstrated to facilitate CsSnI₃-based perovskite solar cells to achieve a remarkable power conversion efficiency of 14.95% with a high open circuit voltage of 0.81 V measured under AM 1.5G irradiation. © 2025 American Chemical Society.

关键词： Perovskite solar cells

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Polarization extension yielding ultrahigh piezoelectric response in xPb(Nb_(2/3)Ni_(1/3))O_(3)-(1-x)Pb(Zr_(0.3)Ti_(0.7))O_(3)ferroelectrics ceramics

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Journal of Materials Science & technology 2024年第22期189卷 37-43页

作者： Yongxing Wei Junlong Yan Siyuan Dong Changqing Jin Huawei Zhang Lin Hu Ruihua Nan Ling Gao Zhonghua Dai Zengzhe Xi Zengyun Jian Li Jin Shaanxi Key Laboratory of Optoelectronic Functional Materials and Devices School of Materials and Chemical EngineeringXi’an Technological UniversityXi’an 710021China Shaanxi Coal Chemical Industry Technology Research Institute Co.Ltd. Xi’an 710070China Shaanxi Province Key Laboratory of Thin Films Technology&Optical Test Xi’an Technological UniversityXi’an 710021China Electronic Materials Research Laboratory Key Laboratory of the Ministry of EducationSchool of Electronic Science and EngineeringFaculty of Electronic and Information EngineeringXi’an Jiaotong UniversityXi’an 710049China

The heightened piezoelectric performance observed in most explored perovskite systems is typically at-tributed to the electric-field-induced phase transition near the morphotropic phase boundary(MPB)or polymorphic phase boundary(PPB).This study,however,unveils a distinct piezoelectric enhancement mechanism in the xPb(Nb_(2/3)Ni_(1/3))O_(3)-(1-x)Pb(Zr_(0.3)Ti_(0.7))O_(3)(PNN-PZT)system,diverging from the MPB/PPB-centered piezoelectric ***,the composition with x=0.55,positioned close to the tetragonal-pseudocubic(T-PC)phase boundary,achieves an unprecedented piezoelectric coefficient(d_(33))of 1264 pC/N,while retaining a tetragonal local ***,on a local scale,electric fields do not in-cite phase transitions,suggesting that the exceptional piezoelectric performance in PNN-PZT stems from polarization extension near the T-PC *** from other mechanisms,the relative permittivity significantly increases post-poling due to this particular enhancement *** dielectric behavior in poled specimens does not exhibit a conspicuous change at the ferroelectric-relaxor transition ***,both the relative permittivity and planar electromechanical coupling coefficient experience a sharp rise in the temperature range of−25℃to 25℃.This investigation underscores the pivotal role of designing compositionally-driven T-PC phase boundaries,presenting a promising avenue for enhancing piezoelectric properties in ferroelectric ceramics.

关键词： Phase boundary Pseudocubic Polarization extension Local structure Piezoelectric effect

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A Non-volatile Switchable Infrared Stealth Metafilm with GST

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Light(Advanced Manufacturing) 2025年第1期6卷 138-147页

作者： Cong Quan Song Gu Tingzhao Fu Ping Liu Wei Xu Chucai Guo Zhihong Zhu Jianfa Zhang College of Advanced Interdisciplinary Studies National University of Defense TechnologyChangsha 410073China Hunan Provincial Key Laboratory of Novel Nano-Optoelectronic Information Materials and Devices National University of Defense TechnologyChangsha 410073China

In this paper,we experimentally demonstrate a non-volatile switchable infrared stealth metafilm based on high temperature resistant metal Molybdenum(Mo)and phase change material Ge2Sb2Te5(GST).By controlling the phase state of GST,the switch between the infrared stealth and the non-stealth states can be ***,when the GST is in the amorphous state,the emissivity of the film in the 3-5μm and 8-14μm atmospheric window band is suppressed and can realize infrared stealth,together with a high absorption peak of 94%at 6.08μm,which enables radiative heat dissipation;While for the crystalline state of the GST,the average emissivity is more than 0.7 in the band of 8-14μm,and the infrared stealth function cannot be *** the background temperature is 100°C,the temperature difference between the two samples reaches as high as 28°C under an infrared thermal ***,our proposed metafilm can flexibly regulate the infrared thermal radiation of the target so as to realize the switch between the infrared stealth and non-stealth *** have fabricated the metafilm on both hard and flexible *** work holds profound significance for the study of dynamic thermal radiation control and it is set to pave the way for the practical implementation of intelligent infrared stealth technology.

关键词： Infrared stealth Phase change material Atmospheric window Metamaterials Non-volatile Switchable

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